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Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics
Authors:
Bosai Lyu,
Jiajun Chen,
Sen Wang,
Shuo Lou,
Peiyue Shen,
**gxu Xie,
Lu Qiu,
Izaac Mitchell,
Can Li,
Cheng Hu,
Xianliang Zhou,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoqun Wang,
**feng Jia,
Qi Liang,
Guorui Chen,
Tingxin Li,
Shiyong Wang,
Wengen Ouyang,
Oded Hod,
Feng Ding,
Michael Urbakh,
Zhiwen Shi
Abstract:
Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unsca…
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Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unscalable. Here, we report on the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) within h-BN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25 mm), ultranarrow ( < 5 nm), and homochiral with zigzag edges. Our atomistic simulations reveal that the mechanism underlying the embedded growth involves ultralow GNR friction when sliding between AA'-stacked h-BN layers. Using the grown structures, we demonstrate the transfer-free fabrication of embedded GNR field-effect devices that exhibit excellent performance at room temperature with mobilities of up to 4,600 $cm^{2} V^{-1} s^{-1}$ and on-off ratios of up to $10^{6}$. This paves the way to the bottom-up fabrication of high-performance electronic devices based on embedded layered materials.
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Submitted 18 March, 2024;
originally announced March 2024.
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Quick Identification of ABC Trilayer Graphene at Nanoscale Resolution via a Near-field Optical Route
Authors:
Peiyue Shen,
Xianliang Zhou,
Jiajun Chen,
Aolin Deng,
Bosai Lyu,
Zhichun Zhang,
Shuo Lou,
Saiqun Ma,
Binbin Wei,
Zhiwen Shi
Abstract:
ABC-stacked trilayer graphene has exhibited a variety of correlated phenomena owing to its relatively flat bands and gate-tunable bandgap. However, convenient methods are still lacking for identifying ABC graphene with nanometer-scale resolution. Here we demonstrate that the scanning near-field optical microscope (SNOM) working in ambient conditions can provide quick recognition of ABC trilayer gr…
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ABC-stacked trilayer graphene has exhibited a variety of correlated phenomena owing to its relatively flat bands and gate-tunable bandgap. However, convenient methods are still lacking for identifying ABC graphene with nanometer-scale resolution. Here we demonstrate that the scanning near-field optical microscope (SNOM) working in ambient conditions can provide quick recognition of ABC trilayer graphene with no ambiguity and excellent resolution (~20 nm). The recognition is based on the difference in their near-field infrared (IR) responses between the ABA and ABC trilayers. We show that in most frequencies, the response of the ABC trilayer is weaker than the ABA trilayer. However, near the graphene phonon frequency (~1585 cm-1), ABC's response increases dramatically when gated and exhibits a narrow and sharp Fano-shape resonant line, whereas the ABA trilayer is largely featherless. Consequently, the IR contrast between ABC and ABA becomes reversed and can even be striking (ABC/ABA~3) near the graphene phonon frequency. The observed near-field IR features can serve as a golden rule to quickly distinguish ABA and ABC trilayers with no ambiguity, which could largely advance the exploration of correlation physics in ABC-stacked trilayer graphene.
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Submitted 11 March, 2023;
originally announced March 2023.
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Catalytic growth of ultralong graphene nanoribbons on insulating substrates
Authors:
Bosai Lyu,
Jiajun Chen,
Shuo Lou,
Can Li,
Lu Qiu,
Wengen Ouyang,
**gxu Xie,
Izaac Mitchell,
Tongyao Wu,
Aolin Deng,
Cheng Hu,
Xianliang Zhou,
Peiyue Shen,
Saiqun Ma,
Zhenghan Wu,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoqun Wang,
Qi Liang,
**feng Jia,
Michael Urbakh,
Oded Hod,
Feng Ding,
Shiyong Wang,
Zhiwen Shi
Abstract:
Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge.…
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Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge. Here, we report the epitaxial growth of GNRs on an insulating hexagonal boron nitride (h-BN) substrate through nanoparticle-catalysed chemical vapor deposition (CVD). Ultra-narrow GNRs with lengths of up to 10 μm are synthesized. Remarkably, the as-grown GNRs are crystallographically aligned with the h-BN substrate, forming one-dimensional (1D) moiré superlattices. Scanning tunnelling microscopy reveals an average width of 2 nm and a typical bandgap of ~1 eV for similar GNRs grown on conducting graphite substrates. Fully atomistic computational simulations support the experimental results and reveal a competition between the formation of GNRs and carbon nanotubes (CNTs) during the nucleation stage, and van der Waals sliding of the GNRs on the h-BN substrate throughout the growth stage. Our study provides a scalable, single-step method for growing micrometre-long narrow GNRs on insulating substrates, thus opening a route to explore the performance of high-quality GNR devices and the fundamental physics of 1D moiré superlattices.
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Submitted 27 May, 2022;
originally announced May 2022.
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Three-Dimensional Ising Model and Transfer Matrices
Authors:
S. L. Lou,
S. H. Wu
Abstract:
The use of a transfer matrix method to solve the 3D Ising model is straightforwardly generalized from the 2D case. We follow B.Kaufman's approach. No approximation is made, however the largest eigenvalue cannot be identified. This problem comes from the fact that we follow the choice of directions of 2-dimensional rotations in the direct product space of the 2D Ising model such that all eigenval…
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The use of a transfer matrix method to solve the 3D Ising model is straightforwardly generalized from the 2D case. We follow B.Kaufman's approach. No approximation is made, however the largest eigenvalue cannot be identified. This problem comes from the fact that we follow the choice of directions of 2-dimensional rotations in the direct product space of the 2D Ising model such that all eigenvalue equations reduce miraculously to only one equation. Other choices of directions of 2-dimensional rotations for finding the largest eigenvalue may lose this fascinating feature. Comparing the series expansion of internal energy per site at the high temperature limit with the series obtained from the computer graphic method, we find these two series have very similar structures. A possible correct via a factor Φ(x) is suggested to fit the result of the graphic method.
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Submitted 16 August, 2000; v1 submitted 22 March, 2000;
originally announced March 2000.
