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Stable room-temperature multiferroic skyrmions in lithium niobate with enhanced Pockels effect
Authors:
Yalong Yu,
Bo Xiong,
Siqi Wu,
Yekai Ren,
Nuo Chen,
Qingjiao Mi,
Kang** Lou,
Rui Wang,
Tao Chu
Abstract:
Lithium Niobate (LN) is a ferroelectric material with exceptional electrical characteristics, including high piezoelectricity, high Pockels effect, etc. These properties make it a promising platform for numerous fields such as high-speed communication, optical computation, and quantum information processing. Besides these, the introduction of magnetic structures to LN holds significant potential t…
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Lithium Niobate (LN) is a ferroelectric material with exceptional electrical characteristics, including high piezoelectricity, high Pockels effect, etc. These properties make it a promising platform for numerous fields such as high-speed communication, optical computation, and quantum information processing. Besides these, the introduction of magnetic structures to LN holds significant potential to achieve magnetoelectric coupling, which can be applied in magnetic memory and data-processing devices with high efficiency. Here, for the first time, we observe a special topological magnetic structure called magnetic skyrmion in LN (SK-LN) by the combination of magnetic field annealing and rapid annealing processes . Compared to the magnetic skyrmions reported in magnetic systems, SK-LN exhibit exceptionally high stability. Additionally, the center of the magnetic vortex exhibits spontaneous ferroelectric polarization, indicating its multiferroic characteristic. With the excitation of these multiferroic skyrmions, the modulation efficiency of the electro-optical (EO) modulator fabricated on thin film lithium niobate on insulator (LNOI) wafer was found to be enhanced from 1.98 V*cm to 0.63 V*cm. It is considered that the multiferroic skyrmions significantly enhance the Pockels coefficient of LN to 101 pm/V, nearly three times the result (32pm/V) reported previously.
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Submitted 7 July, 2024;
originally announced July 2024.
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Large enhancement of spin-orbit torques under a MHz modulation due to phonon-magnon coupling
Authors:
Hanying Zhang,
Qianwen Zhao,
Baiqing Jiang,
Yuan Wang,
Tunan Xie,
Kaihua Lou,
ChaoChao Xia,
C. Bi
Abstract:
The discovery of spin-orbit torques (SOTs) generated through the spin Hall or Rashba effects provides an alternative write approach for magnetic random-access memory (MRAM), igniting the development of spin-orbitronics in recent years. Quantitative characterization of SOTs highly relies on the SOT-driven ferromagnetic resonance (ST-FMR), where a modulated microwave current is used to generate ac S…
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The discovery of spin-orbit torques (SOTs) generated through the spin Hall or Rashba effects provides an alternative write approach for magnetic random-access memory (MRAM), igniting the development of spin-orbitronics in recent years. Quantitative characterization of SOTs highly relies on the SOT-driven ferromagnetic resonance (ST-FMR), where a modulated microwave current is used to generate ac SOTs and the modulation-frequency is usually less than 100 kHz (the limit of conventional lock-in amplifiers). Here we have investigated the SOT of typical SOT material/ferromagnet bilayers in an extended modulation-frequency range, up to MHz, by develo** the ST-FMR measurement. Remarkably, we found that the measured SOTs are enhanced about three times in the MHz range, which cannot be explained according to present SOT theory. We attribute the enhancement of SOT to additional magnon excitations due to phonon-magnon coupling, which is also reflected in the slight changes of resonant field and linewidth in the acquired ST-FMR spectra, corresponding to the modifications of effective magnetization and dam** constant, respectively. Our results indicate that the write current of SOT-MRAM may be reduced with the assistant of phonon-magnon coupling.
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Submitted 1 December, 2023;
originally announced January 2024.
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Proximity-induced interfacial room-temperature ferromagnetism in semiconducting Fe3GeTe2
Authors:
Qianwen Zhao,
Yingmei Zhu,
Hanying Zhang,
Baiqing Jiang,
Yuan Wang,
Tunan Xie,
Kaihua Lou,
ChaoChao Xia,
Hongxin Yang,
C. Bi
Abstract:
The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices but with an acknowledged challenge that the Curie temperature (Tc) is usually far below room temperature. Many efforts such as voltage control and magnetic ion do** are currently underway to enhance the functional temperature, in…
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The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices but with an acknowledged challenge that the Curie temperature (Tc) is usually far below room temperature. Many efforts such as voltage control and magnetic ion do** are currently underway to enhance the functional temperature, in which the involvement of additional electrodes or extra magnetic ions limits their plenty of applications in practical devices. Here we demonstrate that the magnetic proximity, a robust effect but with elusive mechanisms, can induce room-temperature ferromagnetism at the interface between sputtered Pt and semiconducting Fe3GeTe2, both of which do not show ferromagnetism at 300 K. The independent electrical and magnetization measurements, structure analysis, and control samples with Ta highlighting the role of Pt confirm that the ferromagnetism with the Tc of above 400 K arises from the Fe3GeTe2/Pt interfaces, rather than Fe aggregation or other artificial effects. Moreover, contrary to conventional ferromagnet/Pt structures, the spin current generated by the Pt layer is enhanced more than two times at the Fe3GeTe2/Pt interfaces, indicating the potential applications of the unique proximity effect in building high-efficient spintronic devices. These results may pave a new avenue to create room-temperature functional spin devices based on low-Tc materials and provide clear evidences of magnetic proximity effects by using non-ferromagnetic materials.
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Submitted 12 September, 2023;
originally announced September 2023.
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Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order
Authors:
Qianwen Zhao,
ChaoChao Xia,
Hanying Zhang,
Baiqing Jiang,
Tunan Xie,
Kaihua Lou,
Chong Bi
Abstract:
The discovery of ferromagnetism in two-dimensional (2D) monolayers has stimulated growing research interest in both spintronics and material science. However, these 2D ferromagnetic layers are mainly prepared through an incompatible approach for large-scale fabrication and integration, and moreover, a fundamental question whether the observed ferromagnetism actually correlates with the 2D crystall…
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The discovery of ferromagnetism in two-dimensional (2D) monolayers has stimulated growing research interest in both spintronics and material science. However, these 2D ferromagnetic layers are mainly prepared through an incompatible approach for large-scale fabrication and integration, and moreover, a fundamental question whether the observed ferromagnetism actually correlates with the 2D crystalline order has not been explored. Here, we choose a typical 2D ferromagnetic material, Fe3GeTe2, to address these two issues by investigating its ferromagnetism in an amorphous state. We have fabricated nanometer-thick amorphous Fe3GeTe2 films approaching the monolayer thickness limit of crystallized Fe3GeTe2 (0.8 nm) through magnetron sputtering. Compared to crystallized Fe3GeTe2, we found that the basic ferromagnetic attributes, such as the Curie temperature that directly reflects magnetic exchange interactions and local anisotropic energy, do not change significantly in the amorphous states. This is attributed to that the short-range atomic order, as confirmed by valence state analysis, is almost the same for both phases. The persistence of ferromagnetism in the ultrathin amorphous counterpart has also been confirmed through magnetoresistance measurements, where two unconventional switching dips arising from electrical transport within domain walls are clearly observed in the amorphous Fe3GeTe2 single layer. These results indicate that the long-range ferromagnetic order of crystallized Fe3GeTe2 may not correlate to the 2D crystalline order and the corresponding ferromagnetic attributes can be utilized in an amorphous state which suits large-scale fabrication in a semiconductor technology-compatible manner for spintronics applications.
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Submitted 1 February, 2023;
originally announced February 2023.
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Perpendicular magnetic anisotropy in as-deposited CoFeB/MgO thin films
Authors:
Kaihua Lou,
Tunan Xie,
Qianwen Zhao,
Baiqing Jiang,
ChaoChao Xia,
Hanying Zhang,
Zhihong Yao,
Chong Bi
Abstract:
Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing challenge. Even for the widely used CoFeB/MgO structures, perpendicular magnetic anisotropy (PMA) can only be established on limited buffer layers through post-anne…
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Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing challenge. Even for the widely used CoFeB/MgO structures, perpendicular magnetic anisotropy (PMA) can only be established on limited buffer layers through post-annealing above 300 °C. Here, we report that the PMA of CoFeB/MgO films can be established reliably on various buffer layers in the absence of post-annealing. Further results show that precise control of MgO thickness, which determines oxygen diffusion in the underneath CoFeB layer, is the key to obtaining the as-deposited PMA. Interestingly, contrary to previous understanding, post-annealing does not influence the well-established as-deposited PMA significantly but indeed enhances unsaturated PMA with a thick MgO layer by modulating oxygen distributions, rather than crystallinity or Co- and Fe-O bonding. Moreover, our results indicate that oxygen diffusion also plays a critical role in the PMA degradation at high temperature. These results provide a practical approach to build spin-orbitronic devices based on various high-efficient SOT materials.
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Submitted 31 August, 2022;
originally announced August 2022.
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Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer
Authors:
Kaihua Lou,
Qianwen Zhao,
Baiqing Jiang,
Chong Bi
Abstract:
Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak and usually requires a lock-in amplifier for detection even in the bilayer involving Ta or Pt with a large spin Hall angle (SHA). Here we report a type of UMR,…
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Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak and usually requires a lock-in amplifier for detection even in the bilayer involving Ta or Pt with a large spin Hall angle (SHA). Here we report a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeB layer without any adjacent SHE layers, where the UMR signal is about 10 times larger than that in Ta/CoFeB structures and can be detected by using conventional dc multimeters in the absence of lock-in amplifiers. We further demonstrate that the extracted AUMR by excluding thermal contributions shows reversal signs for the CoFeB and NiFe single layers with opposite SHAs, indicating that the AUMR may originate from the self-generated spin accumulation interacting with magnetization through the giant magnetoresistance-like mechanism. These results suggest that the AUMR contributes UMR signals larger than the interfacial spin Hall UMR in the CoFeB-involved systems, providing a convenient and reliable approach to detect in-plane magnetization for the two-terminal spintronic devices.
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Submitted 9 June, 2022;
originally announced June 2022.
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Anatomy of cage formation in a 2D glass-forming liquid
Authors:
Bo Li,
Kai Lou,
Walter Kob,
Steve Granick
Abstract:
The solidity of glassy materials is believed to be due to the cage formed around each particle by its neighbors, but in reality the details of cage-formation remain elusive [1-4]. This cage starts to be formed at the onset temperature/density at which the normal liquid begins to show the first signs of glassy dynamics. To study cage-formation we use here focused lasers to produce a local perturbat…
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The solidity of glassy materials is believed to be due to the cage formed around each particle by its neighbors, but in reality the details of cage-formation remain elusive [1-4]. This cage starts to be formed at the onset temperature/density at which the normal liquid begins to show the first signs of glassy dynamics. To study cage-formation we use here focused lasers to produce a local perturbation of the structure on the particle level in 2D colloidal suspensions and monitor by means of video microscopy the system's non-linear dynamic response. All observables we probed show a response which is non-monotonic as a function of the packing fraction, peaking at the onset density. Video microscopic images reveal that this maximum response is due to the buildup of domains with cooperative dynamics that become increasingly rigid and start to dominate the particle dynamics. This proof-of-concept from microrheological deformation demonstrates that in this glass-forming liquid cage formation is directly related to the merging of these domains, thus elucidating the first step in glass-formation [1, 5].
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Submitted 21 August, 2020;
originally announced August 2020.
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Probing the Local Response of Glass-forming Liquids by Laser Excitations
Authors:
Bo Li,
Kai Lou,
Walter Kob,
Steve Granick
Abstract:
The glass is a disordered solid that processes distinct dynamical and elastic properties compared with crystal. How heterogeneous glassy materials can be and to what extent dynamics is encoded with structure and elasticity are long-standing puzzles in glass science. In this experiment, we probed the responses of binary colloidal glasses towards the excitations induced by highly focused laser pulse…
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The glass is a disordered solid that processes distinct dynamical and elastic properties compared with crystal. How heterogeneous glassy materials can be and to what extent dynamics is encoded with structure and elasticity are long-standing puzzles in glass science. In this experiment, we probed the responses of binary colloidal glasses towards the excitations induced by highly focused laser pulses. We observed very similar excitation patterns when the laser was repeated in the linear region; directly proving that the dynamical heterogeneity is strongly encoded with structure. In the non-linear region, we identified a non-monotonic dynamical length scale as a function of area fraction, resulting from the non-monotonic coupling of momentum transfer in radial and orthogonal directions. Surprisingly, the excitation size and radius of gyration conformed to a universal scaling relation that covered both linear and non-linear regions. Our experiments offered a new strategy of actively probing the response of glassy materials on the microscopic level.
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Submitted 1 April, 2019;
originally announced April 2019.
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Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer
Authors:
W. Yu,
V. Clericò,
C. Hernández Fuentevilla,
X. Shi,
Y. Jiang,
D. Saha,
W. K. Lou,
K. Chang,
D. H. Huang,
G. Gumbs,
D. Smirnov,
C. J. Stanton,
Z. Jiang,
V. Bellani,
Y. Meziani,
E. Diez,
W. Pan,
S. D. Hawkins,
J. F. Klem
Abstract:
Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hol…
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Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature-dependence above T = 7 K and perfect stability against quantizing magnetic fields. By quantitatively comparing our data with early theoretical predictions, we show that such unexpectedly large resistance in our nominally zero-gap semi-metal system is probably due to the formation of an excitonic insulator state.
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Submitted 25 January, 2017;
originally announced January 2017.
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Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
Authors:
Y. Jiang,
S. Thapa,
G. D. Sanders,
C. J. Stanton,
Q. Zhang,
J. Kono,
W. K. Lou,
K. Chang,
S. D. Hawkins,
J. F. Klem,
W. Pan,
D. Smirnov,
Z. Jiang
Abstract:
We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inve…
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We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inverted state with distinct magnetic field dependence. Using an eight-band Pidgeon-Brown model, we explain all the major absorption peaks observed in our experiment. We demonstrate that the semiconductor to semimetal transition can be realized by manipulating the quantum confinement, the strain, and the magnetic field. Our work paves the way for band engineering of optimal InAs/GaSb structures for realizing novel topological states as well as for device applications in the terahertz regime.
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Submitted 18 October, 2016;
originally announced October 2016.
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Electronic and magneto-optical properties of monolayer phosphorene quantum dots
Authors:
Rui Zhang,
X. Y. Zhou,
D. Zhang,
W. K. Lou,
F. Zhai,
Kai Chang
Abstract:
We theoretically investigate the electronic and magneto-optical properties of rectangular, hexangular, and triangular monolayer phosphorene quantum dots (MPQDs) utilizing the tight-binding method. The electronic states, density of states, electronic density distribution, and Laudau levels as well as the optical absorption spectrum are calculated numerically. Our calculations show that: (1) edge st…
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We theoretically investigate the electronic and magneto-optical properties of rectangular, hexangular, and triangular monolayer phosphorene quantum dots (MPQDs) utilizing the tight-binding method. The electronic states, density of states, electronic density distribution, and Laudau levels as well as the optical absorption spectrum are calculated numerically. Our calculations show that: (1) edge states appear in the band gap in all kinds of MPQDs regardless of their shapes and edge configurations due to the anisotropic electron hop** in monolayer phosphorene (MLP). Electrons in any edge state appear only in the armchair direction of the dot boundary, which is distinct from that in graphene quantum dots; (2) the magnetic levels of MPQDs exhibit a Hofstadter-butterfly spectrum and approach the Landau levels of MLP as the magnetic field increases . A "flat band" appears in the magneto-energy spectrum which is totally different from that of MLP; (3) the electronic and optical properties can be tuned by the dot size, the types of boundary edges and the external magnetic field.
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Submitted 14 July, 2015;
originally announced July 2015.
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Landau levels and magneto-transport property of monolayer phosphorene
Authors:
X. Y. Zhou,
R. Zhang,
J. P. Sun,
Y. L. Zou,
D. Zhang,
W. K. Lou,
F. Cheng,
G. H. Zhou,
F. Zhai,
Kai Chang
Abstract:
We investigate theoretically the Landau levels (LLs) and magneto-transport properties of phosphorene under a perpendicular magnetic field within the framework of the effective \textbf{\emph{k$\cdot$p}} Hamiltonian and tight-binding (TB) model. At low field regime, we find that the LLs linearly depend both on the LL index $n$ and magnetic field $B$, which is similar with that of conventional semico…
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We investigate theoretically the Landau levels (LLs) and magneto-transport properties of phosphorene under a perpendicular magnetic field within the framework of the effective \textbf{\emph{k$\cdot$p}} Hamiltonian and tight-binding (TB) model. At low field regime, we find that the LLs linearly depend both on the LL index $n$ and magnetic field $B$, which is similar with that of conventional semiconductor two-dimensional electron gas. The Landau splittings of conduction and valence band are different and the wavefunctions corresponding to the LLs are strongly anisotropic due to the different anisotropic effective masses. An analytical expression for the LLs in low energy regime is obtained via solving the decoupled Hamiltonian, which agrees well with the numerical calculations. At high magnetic regime, a self-similar Hofstadter butterfly (HB) spectrum is obtained by using the TB model. The HB spectrum is consistent with the Landau level fan calculated from the effective \textbf{\emph{k$\cdot$p}} theory in a wide regime of magnetic fields. We find the LLs of phosphorene nanoribbon depend strongly on the ribbon orientation due to the anisotropic hop** parameters. The Hall and the longitudinal conductances (resistances) clearly reveal the structure of LLs.
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Submitted 24 April, 2015; v1 submitted 16 November, 2014;
originally announced November 2014.
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Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well
Authors:
M. S. Miao,
Q. Yan,
C. G. Van de Walle,
W. K. Lou,
L. L. Li,
K. Chang
Abstract:
Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k*p Hamiltonian, we show that the intr…
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Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k*p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.
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Submitted 13 May, 2012;
originally announced May 2012.
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Helical Quantum States in HgTe Quantum Dots with Inverted Band Structures
Authors:
Kai Chang,
W. K. Lou
Abstract:
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of HgTe quantum dot with an inverted band structure are fully spin-polarized, and show ring-like density distributions near the boundary of the QD and spin-angular momentum locking. The persistent char…
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We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of HgTe quantum dot with an inverted band structure are fully spin-polarized, and show ring-like density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such QD structure and oscillate with increasing magnetic fields. This feature offers us a practical way to detect these exotic ring-like edge states using the SQUID technique.
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Submitted 20 September, 2011; v1 submitted 20 October, 2010;
originally announced October 2010.
