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Topological phases of extended Su-Schrieffer-Heeger-Hubbard model
Authors:
Pei-Jie Chang,
**ghui Pi,
Muxi Zheng,
Yu-Ting Lei,
Dong Ruan,
Gui-Lu Long
Abstract:
Despite extensive studies on the one-dimensional Su-Schrieffer-Heeger-Hubbard (SSHH) model, the variant incorporating next-nearest neighbour hop** remains largely unexplored. Here, we investigate the ground-state properties of this extended SSHH model using the constrained-path auxiliary-field quantum Monte Carlo (CP-AFQMC) method. We show that this model exhibits rich topological phases, charac…
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Despite extensive studies on the one-dimensional Su-Schrieffer-Heeger-Hubbard (SSHH) model, the variant incorporating next-nearest neighbour hop** remains largely unexplored. Here, we investigate the ground-state properties of this extended SSHH model using the constrained-path auxiliary-field quantum Monte Carlo (CP-AFQMC) method. We show that this model exhibits rich topological phases, characterized by robust edge states against interaction. We quantify the properties of these edge states by analyzing spin correlation and second-order Rényi entanglement entropy. The system exhibits long-range spin correlation and near-zero Rényi entropy at half-filling. Besides, there is a long-range anti-ferromagnetic order at quarter-filling. Interestingly, an external magnetic field disrupts this long-range anti-ferromagnetic order, restoring long-range spin correlation and near-zero Rényi entropy. Furthermore, our work provides a paradigm studying topological properties in large interacting systems via the CP-AFQMC algorithm.
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Submitted 19 June, 2024; v1 submitted 16 May, 2024;
originally announced May 2024.
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Imaginary Stark Skin Effect
Authors:
Heng Lin,
**ghui Pi,
Yunyao Qi,
Gui-Lu Long
Abstract:
The non-Hermitian skin effect (NHSE) is a unique phenomenon in non-Hermitian systems. However, studies on NHSE in systems without translational symmetry remain largely unexplored. Here, we unveil a new class of NHSE, dubbed "imaginary Stark skin effect" (ISSE), in a one-dimensional lossy lattice with a spatially increasing loss rate. The energy spectrum of this model exhibits a T-shaped feature, w…
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The non-Hermitian skin effect (NHSE) is a unique phenomenon in non-Hermitian systems. However, studies on NHSE in systems without translational symmetry remain largely unexplored. Here, we unveil a new class of NHSE, dubbed "imaginary Stark skin effect" (ISSE), in a one-dimensional lossy lattice with a spatially increasing loss rate. The energy spectrum of this model exhibits a T-shaped feature, with approximately half of the eigenstates localized at the left boundary. These skin modes exhibit peculiar behaviors, expressed as a single stable exponential decay wave within the bulk region. We use the transfer matrix method to analyze the formation of the ISSE in this model. According to the eigen-decomposition of the transfer matrix, the wave function is divided into two parts, one of which dominates the behavior of the skin modes in the bulk. Our findings provide insights into the NHSE in systems without translational symmetry and contribute to the understanding of non-Hermitian systems in general.
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Submitted 1 May, 2024; v1 submitted 25 April, 2024;
originally announced April 2024.
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A powered full quantum eigensolver for energy band structures
Authors:
Bozhi Wang,
**gwei Wen,
Jiawei Wu,
Haonan Xie,
Fan Yang,
Shijie Wei,
Gui-lu Long
Abstract:
There has been an increasing research focus on quantum algorithms for condensed matter systems recently, particularly on calculating energy band structures. Here, we propose a quantum algorithm, the powered full quantum eigensolver(P-FQE), by using the exponentiation of operators of the full quantum eigensolver(FQE). This leads to an exponential increase in the success probability of measuring the…
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There has been an increasing research focus on quantum algorithms for condensed matter systems recently, particularly on calculating energy band structures. Here, we propose a quantum algorithm, the powered full quantum eigensolver(P-FQE), by using the exponentiation of operators of the full quantum eigensolver(FQE). This leads to an exponential increase in the success probability of measuring the target state in certain circumstances where the number of generating elements involved in the exponentiation of operators exhibit a log polynomial dependence on the number of orbitals. Furthermore, we conduct numerical calculations for band structure determination of the twisted double-layer graphene. We experimentally demonstrate the feasibility and robustness of the P-FQE algorithm using superconducting quantum computers for graphene and Weyl semimetal. One significant advantage of our algorithm is its ability to reduce the requirements of extremely high-performance hardware, making it more suitable for energy spectra determination on noisy intermediate-scale quantum (NISQ) devices.
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Submitted 6 August, 2023;
originally announced August 2023.
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Quantum oscillations in field-induced correlated insulators of a moiré superlattice
Authors:
Le Liu,
Yanbang Chu,
Guang Yang,
Yalong Yuan,
Fanfan Wu,
Yiru Ji,
**peng Tian,
Rong Yang,
Kenji Watanabe,
Takashi Taniguchi,
Gen Long,
Dongxia Shi,
Jianpeng Liu,
Jie Shen,
Li Lu,
Wei Yang,
Guangyu Zhang
Abstract:
We report an observation of quantum oscillations (QOs) in the correlated insulators with valley anisotropy of twisted double bilayer graphene (TDBG). The anomalous QOs are best captured in the magneto resistivity oscillations of the insulators at v = -2, with a period of 1/B and an oscillation amplitude as high as 150 kΩ. The QOs can survive up to ~10 K, and above 12 K, the insulating behaviors ar…
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We report an observation of quantum oscillations (QOs) in the correlated insulators with valley anisotropy of twisted double bilayer graphene (TDBG). The anomalous QOs are best captured in the magneto resistivity oscillations of the insulators at v = -2, with a period of 1/B and an oscillation amplitude as high as 150 kΩ. The QOs can survive up to ~10 K, and above 12 K, the insulating behaviors are dominant. The QOs of the insulator are strongly D dependent: the carrier density extracted from the 1/B periodicity decreases almost linearly with D from -0.7 to -1.1 V/nm, suggesting a reduced Fermi surface; the effective mass from Lifshitz-Kosevich analysis depends nonlinearly on D, reaching a minimal value of 0.1 me at D = ~ -1.0 V/nm. Similar observations of QOs are also found at v = 2, as well as in other devices without graphite gate. We interpret the D sensitive QOs of the correlated insulators in the picture of band inversion. By reconstructing an inverted band model with the measured effective mass and Fermi surface, the density of state at the gap, calculated from thermal broadened Landau levels, agrees qualitatively with the observed QOs in the insulators. While more theoretical understandings are needed in the future to fully account for the anomalous QOs in this moiré system, our study suggests that TDBG is an excellent platform to discover exotic phases where correlation and topology are at play.
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Submitted 14 May, 2023; v1 submitted 20 May, 2022;
originally announced May 2022.
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Global Correlation and Local Information Flows in Controllable Non-Markovian Open Quantum Dynamics
Authors:
Xin-Yu Chen,
Na-Na Zhang,
Wan-Ting He,
Xiang-Yu Kong,
Ming-Jie Tao,
Fu-Guo Deng,
Qing Ai,
Gui-Lu Long
Abstract:
In a fully-controllable experiment platform for studying non-Markovian open quantum dynamics, we show that the non-Markovianity could be investigated from the global and local aspects. By mixing random unitary dynamics, we demonstrate non-Markovian and Markovian open quantum dynamics. From the global point of view, by tuning the base frequency we demonstrate the transition from the Markovianity to…
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In a fully-controllable experiment platform for studying non-Markovian open quantum dynamics, we show that the non-Markovianity could be investigated from the global and local aspects. By mixing random unitary dynamics, we demonstrate non-Markovian and Markovian open quantum dynamics. From the global point of view, by tuning the base frequency we demonstrate the transition from the Markovianity to the non-Markovianity as measured by the quantum mutual information (QMI). In a Markovian open quantum process, the QMI decays monotonically, while it may rise temporarily in a non-Markovian process. However, under some circumstances, it is not sufficient to globally investigate the non-Markovianity of the open quantum dynamics. As an essential supplement, we further utilize the quantum Fisher information (QFI) flow to locally characterize the non-Markovianity in different channels. We demonstrate that the QMI in combination with the QFI flow are capable of measuring the non-Markovianity for a multi-channel open quantum dynamics.
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Submitted 28 February, 2022;
originally announced February 2022.
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Robust Preparation of Many-body Ground States in Jaynes-Cummings Lattices
Authors:
Kang Cai,
Prabin Parajuli,
Guilu Long,
Chee Wei Wong,
Lin Tian
Abstract:
Strongly-correlated polaritons in Jaynes-Cummings (JC) lattices can exhibit quantum phase transitions between the Mott-insulating and superfluid phases at integer fillings. The prerequisite to observe such phase transitions is to pump polariton excitations into a JC lattice and prepare them into appropriate ground states. Despite previous efforts, it is still challenging to generate many-body stat…
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Strongly-correlated polaritons in Jaynes-Cummings (JC) lattices can exhibit quantum phase transitions between the Mott-insulating and superfluid phases at integer fillings. The prerequisite to observe such phase transitions is to pump polariton excitations into a JC lattice and prepare them into appropriate ground states. Despite previous efforts, it is still challenging to generate many-body states with high accuracy. Here we present an approach for the robust preparation of many-body ground states of polaritons in finite-sized JC lattices by optimized nonlinear ram**. We apply a Landau-Zener type of estimation to this finite-sized system and derive the optimal ram** index for selected ram** trajectories, which can greatly improve the fidelity of the prepared states. With numerical simulation, we show that by choosing an appropriate ram** trajectory, the fidelity in this approach can remain close to unity in almost the entire parameter space. This approach can shed light on high-fidelity state preparation in quantum simulators and advance the implementation of quantum simulation with practical devices.
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Submitted 13 June, 2021; v1 submitted 4 July, 2020;
originally announced July 2020.
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Capturing Complex Behaviour in Josephson Travelling Wave Parametric Amplifiers
Authors:
Tom Dixon,
Jacob W. Dunstan,
George B. Long,
Jonathan M. Williams,
Phil J. Meeson,
Connor D. Shelly
Abstract:
We present an analysis of wave-mixing in recently developed Josephson Travelling Wave Parametric Amplifiers (JTWPAs). Circuit simulations performed using WRspice show the full behaviour of the JTWPA allowing propagation of all tones. The Coupled Mode Equations (CMEs) containing only pump, signal, and idler propagation are shown to be insufficient to completely capture complex mixing behaviour in t…
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We present an analysis of wave-mixing in recently developed Josephson Travelling Wave Parametric Amplifiers (JTWPAs). Circuit simulations performed using WRspice show the full behaviour of the JTWPA allowing propagation of all tones. The Coupled Mode Equations (CMEs) containing only pump, signal, and idler propagation are shown to be insufficient to completely capture complex mixing behaviour in the JTWPA. Extension of the CMEs through additional state vectors in the analytic solutions allows closer agreement with WRspice. We consider an ordered framework for the systematic inclusion of extended eigenmodes and make a qualitative comparison with WRspice at each step. The agreement between the two methods validates both approaches and provides insight into the operation of the JTWPA. We show that care should be taken when using the CMEs and propose that WRspice should be used as a design tool for non-linear superconducting circuits such as the JTWPA.
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Submitted 11 December, 2019;
originally announced December 2019.
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Spin-flop transition in atomically thin MnPS$_3$ crystals
Authors:
Gen Long,
Hugo Henck,
Marco Gibertini,
Dumitru Dumcenco,
Zhe Wang,
Takashi Taniguchi,
Kenji Watanabe,
Enrico Giannini,
Alberto F. Morpurgo
Abstract:
The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$). This is possible because the tunneling magnetoresistance originates from a spin-filtering effect sensitive to the relative orientation of the magnetization in d…
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The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$). This is possible because the tunneling magnetoresistance originates from a spin-filtering effect sensitive to the relative orientation of the magnetization in different layers, i.e., to the magnetic state of the multilayers. For systems in which antiferromagnetism occurs within an individual layer, however, no spin-filtering occurs: it is unclear whether this strategy can work. To address this issue, we investigate tunnel transport through atomically thin crystals of MnPS$_3$, a van der Waals semiconductor that in the bulk exhibits easy-axis antiferromagnetic order within the layers. For thick multilayers below $T\simeq 78$ K, a $T$-dependent magnetoresistance sets-in at $\sim 5$ T, and is found to track the boundary between the antiferromagnetic and the spin-flop phases known from bulk magnetization measurements. The magnetoresistance persists down to individual MnPS$_3$ monolayers with nearly unchanged characteristic temperature and magnetic field scales, albeit with a different dependence on $H$. We discuss the implications of these finding for the magnetic state of atomically thin MnPS$_3$ crystals, conclude that antiferromagnetic correlations persist down to the level of individual monolayers, and that tunneling magnetoresistance does allow magnetism in 2D insulating materials to be detected even in the absence of spin-filtering.
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Submitted 29 October, 2019;
originally announced October 2019.
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Coherent and incoherent theories for photosynthetic energy transfer
Authors:
Ming-Jie Tao,
Na-Na Zhang,
Peng-Yu Wen,
Fu-Guo Deng,
Qing Ai,
Gui-Lu Long
Abstract:
There is a remarkable characteristic of photosynthesis in nature, that is, the energy transfer efficiency is close to 100%. Recently, due to the rapid progress made in the experimental techniques, quantum coherent effects have been experimentally demonstrated. Traditionally, the incoherent theories are capable of calculating the energy transfer efficiency, e.g., (generalized) Förster theory and mo…
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There is a remarkable characteristic of photosynthesis in nature, that is, the energy transfer efficiency is close to 100%. Recently, due to the rapid progress made in the experimental techniques, quantum coherent effects have been experimentally demonstrated. Traditionally, the incoherent theories are capable of calculating the energy transfer efficiency, e.g., (generalized) Förster theory and modified Redfield theory. However, in order to describe the quantum coherent effects in photosynthesis, the coherent theories have been developed, such as hierarchical equation of motion, quantum path integral, coherent modified Redfield theory, small-polaron quantum master equation, and general Bloch-Redfield theory in addition to the Redfield theory. Here, we summarize the main points of the above approaches, which might be beneficial to the quantum simulation of quantum dynamics of exciton energy transfer in natural photosynthesis, and shed light on the design of artificial light-harvesting devices.
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Submitted 23 January, 2020; v1 submitted 8 July, 2019;
originally announced July 2019.
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Intrinsic valley Hall transport in atomically thin MoS2
Authors:
Zefei Wu,
Benjamin T. Zhou,
Gui-Bin Liu,
Jiangxiazi Lin,
Tianyi Han,
Liheng An,
Yuanwei Wang,
Shuigang Xu,
Gen Long,
Chun Cheng,
Kam Tuen Law,
Fan Zhang,
Ning Wang
Abstract:
Electrons hop** in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here,…
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Electrons hop** in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here, we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological quantum origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics.
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Submitted 17 May, 2018;
originally announced May 2018.
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Probing Landau levels of strongly interacting massive Dirac electrons in layer-polarized MoS$_2$
Authors:
Jiangxiazi Lin,
Tianyi Han,
Benjamin A. Piot,
Zefei Wu,
Shuigang Xu,
Gen Long,
Liheng An,
Patrick Ka Man Cheung,
Peng-Peng Zheng,
Paulina Plochocka,
Duncan K. Maude,
Fan Zhang,
Ning Wang
Abstract:
Monolayer transition metal dichalcogenides are recently emerged 2D electronic systems with various novel properties, such as spin-valley locking, circular dichroism, valley Hall effects, Ising superconductivity. The reduced dimensionality and large effective masses further produce unconventional many-body interaction effects. Although recent hole transport measurements in WSe$_2$ indicate strong i…
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Monolayer transition metal dichalcogenides are recently emerged 2D electronic systems with various novel properties, such as spin-valley locking, circular dichroism, valley Hall effects, Ising superconductivity. The reduced dimensionality and large effective masses further produce unconventional many-body interaction effects. Although recent hole transport measurements in WSe$_2$ indicate strong interactions in the valence bands, many-body interaction effects, particularly in the conduction bands, remain elusive to date. Here, for the first time, we perform transport measurements up to a magnetic field of $29$T to study the massive Dirac electron Landau levels (LL) in layer-polarized MoS$_2$ samples with mobilities of $22000$cm$^2$/(V$\cdot$s) at $1.5$K and densities of $\sim10^{12}$cm$^{-2}$. With decreasing the density, we observe LL crossing induced valley ferrimagnet-to-ferromagnet transitions, as a result of the interaction enhancement of the g-factor from $5.64$ to $21.82$. Near integer ratios of Zeeman-to-cyclotron energies, we discover LL anticrossings due to the formation of quantum Hall Ising ferromagnets, the valley polarizations of which appear to be reversible by tuning the density or an in-plane magnetic field. Our results provide compelling evidence for many-body interaction effects in the conduction bands of monolayer MoS$_2$ and establish a fertile ground for exploring strongly correlated phenomena of massive Dirac electrons.
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Submitted 21 March, 2018;
originally announced March 2018.
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Observation of A$_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
Authors:
J. M. Urban,
M. Baranowski,
A. Surrente,
D. Wlodarczyk,
A. Suchocki,
G. Long,
Y. Wang,
L. Klopotowski,
N. Wang,
D. K. Maude,
P. Plochocka
Abstract:
We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra $\sim$4cm$^{-1}$ above the A$_{\text{g}}^1$ mode in trilay…
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We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra $\sim$4cm$^{-1}$ above the A$_{\text{g}}^1$ mode in trilayer and thicker flakes, which had not been observed experimentally. The newly observed mode originates from the strong black phosphorus inter-layer interaction, which induces a hardening of the surface atoms vibration with respect to the corresponding modes of the inner layers. The observation of this mode suggests a significant impact of h-BN encapsulation on the properties of black phosphorus and can serve as an indicator of the quality of its surface.
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Submitted 22 November, 2017;
originally announced November 2017.
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Isolation and Characterization of Few-layer Manganese Thiophosphite
Authors:
Gen Long,
Ting Zhang,
Xiangbin Cai,
** Hu,
Chang-woo Cho,
Shuigang Xu,
Junying Shen,
Zefei Wu,
Tianyi Han,
Jiangxiazi Lin,
**gwei Wang,
Yuan Cai,
Rolf Lortz,
Zhiqiang Mao,
Ning Wang
Abstract:
This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS$_3$ that couples the valley degree of freedom to a macroscopic antiferromagnetic order. The crystal structure of MnPS$_3$ is identified by high resolution scanning transmission electron microscopy. Layer dependent angle resolved polarized Raman fingerprints of the MnPS$_3$ crystal are obtained and the Raman p…
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This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS$_3$ that couples the valley degree of freedom to a macroscopic antiferromagnetic order. The crystal structure of MnPS$_3$ is identified by high resolution scanning transmission electron microscopy. Layer dependent angle resolved polarized Raman fingerprints of the MnPS$_3$ crystal are obtained and the Raman peak at 383 cm$^{-1}$ exhibits 100% polarity. Temperature dependences of anisotropic magnetic susceptibility of MnPS$_3$ crystal are measured in superconducting quantum interference device. Magnetic parameters like effective magnetic moment, and exchange interaction are extracted from the mean field approximation mode. Ambipolar electronic transport channels in MnPS$_3$ are realized by the liquid gating technique. The conducting channel of MnPS$_3$ offers a unique platform for exploring the spin/valleytronics and magnetic orders in 2D limitation.
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Submitted 8 September, 2017; v1 submitted 17 August, 2017;
originally announced August 2017.
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Probing strong interactions in p-type few-layer WSe$_2$ by density-dependent Landau level crossing
Authors:
Shuigang Xu,
Liheng An,
Jiangxiazi Lin,
Zefei Wu,
Tianyi Han,
Gen Long,
Yuheng He,
Zhi-qiang Bao,
Fan Zhang,
Ning Wang
Abstract:
Atomically thin transition metal dichalcogenides (TMDCs) such as MoS$_2$ and WSe$_2$ are emerging as a new platform for exploring many-body effects. Coulomb interactions are markedly enhanced in these materials because of the reduced screening and the large Wigner-Seitz radii. Although many-body excitonic effects in TMDCs have been extensively studied by optical means, not until recently did probi…
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Atomically thin transition metal dichalcogenides (TMDCs) such as MoS$_2$ and WSe$_2$ are emerging as a new platform for exploring many-body effects. Coulomb interactions are markedly enhanced in these materials because of the reduced screening and the large Wigner-Seitz radii. Although many-body excitonic effects in TMDCs have been extensively studied by optical means, not until recently did probing their strongly correlated electronic effects become possible in transport. Here, in p-type few-layer WSe$_2$ we observe highly density-dependent quantum Hall states of Γ valley holes below 12 T, whose predominant sequences alternate between odd- and even-integers. By tilting the magnetic field to induce Landau level crossings, we show that the strong Coulomb interaction enhances the Zeeman-to-cyclotron energy ratio from 2.67 to 3.55 as the density is reduced from 5.7 to 4.0$\times$10$^{12}$ cm$^{-2}$, giving rise to the even-odd alternation. Unprecedentedly, this indicates a 4.8 times enhancement of the g-factor over its band theory value at a density as high as 4.0$\times$10$^{12}$ cm$^{-2}$. Our findings unambiguously demonstrate that p-type few-layer WSe$_2$ is a superior platform for exploring strongly correlated electronic phenomena, opening a new perspective for realizing the elusive Wigner crystallization at a moderate density.
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Submitted 30 September, 2017; v1 submitted 9 August, 2017;
originally announced August 2017.
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Measuring Holographic Entanglement Entropy on a Quantum Simulator
Authors:
Keren Li,
Muxin Han,
Dongxue Qu,
Zichang Huang,
Guilu Long,
Yidun Wan,
Dawei Lu,
Bei Zeng,
Raymond Laflamme
Abstract:
Quantum simulation promises to have wide applications in many fields where problems are hard to model with classical computers. Various quantum devices of different platforms have been built to tackle the problems in, say, quantum chemistry, condensed matter physics, and high-energy physics. Here, we report an experiment towards the simulation of quantum gravity by simulating the holographic entan…
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Quantum simulation promises to have wide applications in many fields where problems are hard to model with classical computers. Various quantum devices of different platforms have been built to tackle the problems in, say, quantum chemistry, condensed matter physics, and high-energy physics. Here, we report an experiment towards the simulation of quantum gravity by simulating the holographic entanglement entropy. On a six-qubit nuclear magnetic resonance quantum simulator, we demonstrate a key result of Anti-de Sitter/conformal field theory(\adscft) correspondence---the Ryu-Takayanagi formula is demonstrated by measuring the relevant entanglement entropies on the perfect tensor state. The fidelity of our experimentally prepared the six-qubit state is 85.0\% via full state tomography and reaches 93.7\% if the signal-decay due to decoherence is taken into account. Our experiment serves as the basic module of simulating more complex tensor network states that exploring \adscft correspondence. As the initial experimental attempt to study \adscft via quantum information processing, our work opens up new avenues exploring quantum gravity phenomena on quantum simulators.
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Submitted 11 April, 2019; v1 submitted 30 April, 2017;
originally announced May 2017.
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Quantum Transport in Ambipolar Few-layer Black Phosphorus
Authors:
Gen Long,
Denis Maryenko,
Sergio Pezzini,
Shuigang Xu,
Zefei Wu,
Tianyi Han,
Jiangxiazi Lin,
Yuanwei Wang,
Liheng An,
Chun Cheng,
Yuan Cai,
Uli Zeitler,
Ning Wang
Abstract:
Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been demonstrated in improving the quality of hole-doped few-layer black phosphorus and its quantum transport studies, whereas the same achievements are rather modest for…
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Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been demonstrated in improving the quality of hole-doped few-layer black phosphorus and its quantum transport studies, whereas the same achievements are rather modest for electron-doped few-layer black phosphorus. Here, we report the ambipolar quantum transport in few-layer black phosphorus exhibiting undoubtedly the quantum Hall effect for hole transport and showing clear signatures of the quantum Hall effect for electron transport. By bringing the spin-resolved Landau levels of the electron-doped black phosphorus to the coincidence, we measure the spin susceptibility $χ_s=m^\ast g^\ast=1.1\pm0.03$. This value is larger than for hole-doped black phosphorus and illustrates an energetically equidistant arrangement of spin-resolved Landau levels. Evidently, the n-type black phosphorus offers a unique platform with equidistant sequence of spin-up and spin-down states for exploring the quantum spintronic.
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Submitted 28 March, 2017; v1 submitted 15 March, 2017;
originally announced March 2017.
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Gate-tunable strong-weak localization transition in few-layer black phosphorus
Authors:
Gen Long,
Shuigang Xu,
Xiangbin Cai,
Zefei Wu,
Tianyi Han,
Jiangxiazi Lin,
Yuanwei Wang,
Liheng An,
Yuan Cai,
Xinran Wang,
Ning Wang
Abstract:
Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hop** transports through charge impurity induced localized states are measured at low-carrier density regime. Variable-range hop** model is applied to simulate the charge carrier scattering behavior. In the high-carrier concentration regime, a negative…
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Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hop** transports through charge impurity induced localized states are measured at low-carrier density regime. Variable-range hop** model is applied to simulate the charge carrier scattering behavior. In the high-carrier concentration regime, a negative magnetoresistance signals the weak localization effect. The extracted phase coherence length is power-law temperature dependent ($\sim T^{-0.48\pm0.03}$) and demonstrates electron-electron interactions in few-layer BP. The competition between the Strong localization length and phase coherence length is proposed and discussed based on the observed gate tunable strong-weak localization transition in few-layer BP.
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Submitted 26 March, 2017; v1 submitted 14 February, 2017;
originally announced February 2017.
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Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2
Authors:
Shuigang Xu,
Junying Shen,
Gen Long,
Zefei Wu,
Zhi-qiang Bao,
Cheng-Cheng Liu,
Xiao Xiao,
Tianyi Han,
Jiangxiazi Lin,
Yingying Wu,
Huanhuan Lu,
Jianqiang Hou,
Liheng An,
Yuanwei Wang,
Yuan Cai,
K. M. Ho,
Yuheng He,
Rolf Lortz,
Fan Zhang,
Ning Wang
Abstract:
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level (LL) crossing effects at ultra-low coincident angles, revealing that the Zeeman energy is abou…
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We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level (LL) crossing effects at ultra-low coincident angles, revealing that the Zeeman energy is about three times as large as the cyclotron energy near the valence band top at Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole-carriers and a substantially enhanced g-factor for exploring strongly correlated phenomena.
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Submitted 2 January, 2017;
originally announced January 2017.
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Charge Density Wave Phase Transition on the Surface of Electrostatically Doped Multilayer Graphene
Authors:
Gen Long,
Shuigang Xu,
Ting Zhang,
Zefei Wu,
Wing Ki Wong,
Tianyi Han,
Jiangxiazi Lin,
Yuan Cai,
Ning Wang
Abstract:
We demonstrate that charge density wave (CDW) phase transition occurs on the surface of electronically doped multilayer graphene when the Fermi level approaches the M points (also known as van Hove singularities where the density of states diverge) in the Brillouin zone of graphene band structure. The occurrence of such CDW phase transitions are supported by both the electrical transport measureme…
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We demonstrate that charge density wave (CDW) phase transition occurs on the surface of electronically doped multilayer graphene when the Fermi level approaches the M points (also known as van Hove singularities where the density of states diverge) in the Brillouin zone of graphene band structure. The occurrence of such CDW phase transitions are supported by both the electrical transport measurement and optical measurements in electrostatically doped multilayer graphene. The CDW transition is accompanied with the sudden change of graphene channel resistance at T$_m$= 100K, as well as the splitting of Raman G peak (1580 cm$^{-1}$). The splitting of Raman G peak indicats the lifting of in-plane optical phonon branch degeneracy and the non-degenerate phonon branches are correlated to the lattice reconstructions of graphene -- the CDW phase transition.
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Submitted 23 October, 2016;
originally announced October 2016.
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Experimental Identification of Non-Abelian Topological Orders on a Quantum Simulator
Authors:
Keren Li,
Yidun Wan,
Ling-Yan Hung,
Tian Lan,
Guilu Long,
Dawei Lu,
Bei Zeng,
Raymond Laflamme
Abstract:
Topological orders can be used as media for topological quantum computing --- a promising quantum computation model due to its invulnerability against local errors. Conversely, a quantum simulator, often regarded as a quantum computing device for special purposes, also offers a way of characterizing topological orders. Here, we show how to identify distinct topological orders via measuring their m…
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Topological orders can be used as media for topological quantum computing --- a promising quantum computation model due to its invulnerability against local errors. Conversely, a quantum simulator, often regarded as a quantum computing device for special purposes, also offers a way of characterizing topological orders. Here, we show how to identify distinct topological orders via measuring their modular $S$ and $T$ matrices. In particular, we employ a nuclear magnetic resonance quantum simulator to study the properties of three topologically ordered matter phases described by the string-net model with two string types, including the $\Z_2$ toric code, doubled semion, and doubled Fibonacci. The third one, non-Abelian Fibonacci order is notably expected to be the simplest candidate for universal topological quantum computing. Our experiment serves as the basic module, built on which one can simulate braiding of non-Abelian anyons and ultimately topological quantum computation via the braiding, and thus provides a new approach of investigating topological orders using quantum computers.
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Submitted 1 February, 2017; v1 submitted 24 August, 2016;
originally announced August 2016.
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Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport
Authors:
Gen Long,
Shuigang Xu,
Junying Shen,
Jianqiang Hou,
Zefei Wu,
Tianyi Han,
Jiangxiazi Lin,
Wing Ki Wong,
Yuan Cai,
Rolf Lortz,
Ning Wang
Abstract:
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes afte…
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We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 $cm^2V^{-1}s^{-1}$ and 8400 $cm^2V^{-1}s^{-1}$ are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.
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Submitted 23 June, 2016;
originally announced June 2016.
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Probing the Electronic States in Black Phosphorus Vertical Heterostructures
Authors:
Xiaolong Chen,
Lin Wang,
Yingying Wu,
Heng Gao,
Yabei Wu,
Guanhua Qin,
Zefei Wu,
Yu Han,
Shuigang Xu,
Tianyi Han,
Weiguang Ye,
Jiangxiazi Lin,
Gen Long,
Yuheng He,
Yuan Cai,
Wei Ren,
Ning Wang
Abstract:
Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices off…
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Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices offer great advantages in probing the electron states of monolayer and few-layer phosphorene at temperatures down to 2 K through capacitance spectroscopy. Electronic states in the conduction and valence bands of phosphorene are accessible over a wide range of temperature and frequency. Exponential band tails have been determined to be related to disorders. Unusual phenomena such as the large temperature-dependence of the electron state population in few-layer phosphorene have been observed and systematically studied. By combining the first-principles calculation, we identified that the thermal excitation of charge trap states and oxidation-induced defect states were the main reasons for this large temperature dependence of the electron state population and degradation of the on-off ratio in phosphorene field-effect transistors.
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Submitted 1 April, 2016;
originally announced April 2016.
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Band bending at interfaces between topological insulator Bi2Se3 and transition metals
Authors:
Weiguang Ye,
A. B. Pakhomov,
Shuigang Xu,
Huanhuan Lu,
Zefei Wu,
Yu Han,
Tianyi Han,
Yingying Wu,
Gen Long,
Jiangxiazi Lin,
Gu Xu,
Yuan Cai,
Lu-Tao Weng,
Ning Wang
Abstract:
Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without cap**. Most interestingly, UPS spectra suggest depletion or inversion in the originally n-type topol…
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Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without cap**. Most interestingly, UPS spectra suggest depletion or inversion in the originally n-type topological insulator near the interface. Strong band bending in the topological insulator requires careful material engineering or electric biasing if one desires to make use of the spin locking in surface states in the bulk gap for potential spintronic applications
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Submitted 11 November, 2015;
originally announced November 2015.
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Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides
Authors:
Zefei Wu,
Shuigang Xu,
Huanhuan Lu,
Gui-Bin Liu,
Armin Khamoshi,
Tianyi Han,
Yingying Wu,
Jiangxiazi Lin,
Gen Long,
Yuheng He,
Yuan Cai,
Fan Zhang,
Ning Wang
Abstract:
In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic…
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In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. In this Letter, we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations for the Q valley electrons in FL transition metal disulfide (TMDs), as well as the first quantum Hall effect (QHE) in TMDCs. Our devices exhibit ultrahigh field-effect mobilities (~16,000 cm2V-1s-1 for FL WS2 and ~10,500 cm2V-1s-1 for FL MoS2) at cryogenic temperatures. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMD devices and a spin Zeeman effect in all even-layer TMD devices.
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Submitted 31 October, 2015;
originally announced November 2015.
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Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus
Authors:
Gen Long,
Denis Maryenko,
Junying Shen,
Shuigang Xu,
Jianqiang Hou,
Zefei Wu,
Wing Ki Wong,
Tianyi Han,
Jiangxiazi Lin,
Yuan Cai,
Rolf Lortz,
Ning Wang
Abstract:
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scattering. At cryogenic tempeature the FET mobility increases up to 45,000 $cm^2/Vs$, which is eight times higher compared with the mobility obtained in ea…
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We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scattering. At cryogenic tempeature the FET mobility increases up to 45,000 $cm^2/Vs$, which is eight times higher compared with the mobility obtained in earlier reports. The unprecedentedly clean h-BN/BP/h-BN heterostructure exhibits Shubnikov-de Haas oscillations and quantum Hall effect with Landau level (LL) filling factors down to v=2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass m=0.26 m_0 is measured, and Lande g-factor g=2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up and down spin orientation is found.
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Submitted 12 May, 2016; v1 submitted 22 October, 2015;
originally announced October 2015.
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Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
Authors:
Shuigang Xu,
Zefei Wu,
Huanhuan Lu,
Yu Han,
Gen Long,
Xiaolong Chen,
Tianyi Han,
Weiguang Ye,
Yingying Wu,
Jiangxiazi Lin,
Junying Shen,
Yuan Cai,
Yuheng He,
Fan Zhang,
Rolf Lortz,
Chun Cheng,
Ning Wang
Abstract:
Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively st…
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Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layer TMDC devices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 cm2/V s to 16000 cm2/V s, as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-type TMDC channels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.
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Submitted 22 April, 2016; v1 submitted 29 March, 2015;
originally announced March 2015.
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Superfluid density and Berezinskii-Kosterlitz-Thouless transition of a spin-orbit coupled Fulde-Ferrell superfluid
Authors:
Ye Cao,
Xia-Ji Liu,
Lianyi He,
Gui-Lu Long,
Hui Hu
Abstract:
We theoretically investigate the superfluid density and Berezinskii-Kosterlitz-Thouless (BKT) transition of a two-dimensional Rashba spin-orbit coupled atomic Fermi gas with both in-plane and out-of-plane Zeeman fields. It was recently predicted that, by tuning the two Zeeman fields, the system may exhibit different exotic Fulde-Ferrell (FF) superfluid phases, including the gapped FF, gapless FF,…
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We theoretically investigate the superfluid density and Berezinskii-Kosterlitz-Thouless (BKT) transition of a two-dimensional Rashba spin-orbit coupled atomic Fermi gas with both in-plane and out-of-plane Zeeman fields. It was recently predicted that, by tuning the two Zeeman fields, the system may exhibit different exotic Fulde-Ferrell (FF) superfluid phases, including the gapped FF, gapless FF, gapless topological FF and gapped topological FF states. Due to the FF paring, we show that the superfluid density (tensor) of the system becomes anisotropic. When an in-plane Zeeman field is applied along the \textit{x}-direction, the tensor component along the \textit{y}-direction $n_{s,yy}$ is generally larger than $n_{s,xx}$ in most parameter space. At zero temperature, there is always a discontinuity jump in $n_{s,xx}$ as the system evolves from a gapped FF into a gapless FF state. With increasing temperature, such a jump is gradually washed out. The critical BKT temperature has been calculated as functions of the spin-orbit coupling strength, interatomic interaction strength, in-plane and out-of-plane Zeeman fields. We predict that the novel FF superfluid phases have a significant critical BKT temperature, typically at the order of $0.1T_{F}$, where $T_{F}$ is the Fermi degenerate temperature. Therefore, their observation is within the reach of current experimental techniques in cold-atom laboratories.
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Submitted 3 October, 2014;
originally announced October 2014.
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Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures
Authors:
Xiaolong Chen,
Zefei Wu,
Shuigang Xu,
Lin Wang,
Rui Huang,
Yu Han,
Weiguang Ye,
Wei Xiong,
Tianyi Han,
Gen Long,
Yang Wang,
Yuheng He,
Yuan Cai,
** Sheng,
Ning Wang
Abstract:
The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena in MoS2, the underlying mechanism and detailed MIT process still remain largely unexplored. Here, we demonstrate that the vertical metal-insulator-semiconducto…
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The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena in MoS2, the underlying mechanism and detailed MIT process still remain largely unexplored. Here, we demonstrate that the vertical metal-insulator-semiconductor (MIS) heterostructures built from atomically thin MoS2 (monolayers and multilayers) are ideal capacitor structures for probing the electron states in MoS2. The vertical configuration of MIS heterostructures offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of MoS2 over a wide excitation frequency (100 Hz-1 MHz) and temperature range (2 K- 300 K). By combining capacitance and transport measurements, we have observed a percolation-type MIT, driven by density inhomogeneities of electron states, in the vertical heterostructures built from monolayer and multilayer MoS2. In addition, the valence band of thin MoS2 layers and their intrinsic properties such as thickness-dependence screening abilities and band gap widths can be easily accessed and precisely determined through the vertical heterostructures.
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Submitted 20 July, 2014;
originally announced July 2014.
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Gapless topological Fulde-Ferrell superfluidity in spin-orbit coupled Fermi gases
Authors:
Ye Cao,
Shu-Hao Zou,
Xia-Ji Liu,
Su Yi,
Gui-Lu Long,
Hui Hu
Abstract:
Topological superfluids usually refer to a superfluid state which is gapped in the bulk but metallic at the boundary. Here we report that a gapless, topologically non-trivial superfluid with inhomogeneous Fulde-Ferrell pairing order parameter can emerge in a two-dimensional spin-orbit coupled Fermi gas, in the presence of both in-plane and out-of-plane Zeeman fields. The Fulde-Ferrell pairing - in…
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Topological superfluids usually refer to a superfluid state which is gapped in the bulk but metallic at the boundary. Here we report that a gapless, topologically non-trivial superfluid with inhomogeneous Fulde-Ferrell pairing order parameter can emerge in a two-dimensional spin-orbit coupled Fermi gas, in the presence of both in-plane and out-of-plane Zeeman fields. The Fulde-Ferrell pairing - induced by the spin-orbit coupling and in-plane Zeeman field - is responsible for this gapless feature. This exotic superfluid has a significant Berezinskii-Kosterlitz-Thouless (BKT) transition temperature and has robust Majorana edge modes against disorder owing to its topological nature.
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Submitted 16 July, 2014; v1 submitted 27 February, 2014;
originally announced February 2014.
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Hop** Transport through Defect-induced Localized States in Molybdenum Disulfide
Authors:
Hao Qiu,
Tao Xu,
Zilu Wang,
Wei Ren,
Haiyan Nan,
Zhenhua Ni,
Qian Chen,
Shijun Yuan,
Feng Miao,
Fengqi Song,
Gen Long,
Yi Shi,
Litao Sun,
**lan Wang,
Xinran Wang
Abstract:
Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type do**. Here we report transport study in few-layer molybdenum disulfide, together with transmission el…
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Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type do**. Here we report transport study in few-layer molybdenum disulfide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulfur vacancies exist in molybdenum disulfide, introducing localized donor states inside the bandgap. Under low carrier densities, the transport exhibits nearest-neighbor hop** at high temperatures and variable-range hop** at low temperatures, which can be well explained under Mott formalism. We suggest that the low-carrier-density transport is dominated by hop** via these localized gap states. Our study reveals the important role of short-range surface defects in tailoring the properties and device applications of molybdenum disulfide.
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Submitted 14 September, 2013;
originally announced September 2013.
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Nonreciprocal light transmission in parity-time-symmetric whispering-gallery microcavities
Authors:
Bo Peng,
Sahin Kaya Ozdemir,
Fuchuan Lei,
Faraz Monifi,
Mariagiovanna Gianfreda,
Gui Lu Long,
Shanhui Fan,
Franco Nori,
Carl M. Bender,
Lan Yang
Abstract:
Optical systems combining balanced loss and gain profiles provide a unique platform to implement classical analogues of quantum systems described by non-Hermitian parity-time- (PT-) symmetric Hamiltonians and to originate new synthetic materials with novel properties. To date, experimental works on PT-symmetric optical systems have been limited to waveguides in which resonances do not play a role.…
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Optical systems combining balanced loss and gain profiles provide a unique platform to implement classical analogues of quantum systems described by non-Hermitian parity-time- (PT-) symmetric Hamiltonians and to originate new synthetic materials with novel properties. To date, experimental works on PT-symmetric optical systems have been limited to waveguides in which resonances do not play a role. Here we report the first demonstration of PT-symmetry breaking in optical resonator systems by using two directly coupled on-chip optical whispering-gallery-mode (WGM) microtoroid silica resonators. Gain in one of the resonators is provided by optically pum** Erbium (Er3+) ions embedded in the silica matrix; the other resonator exhibits passive loss. The coupling strength between the resonators is adjusted by using nanopositioning stages to tune their distance. We have observed reciprocal behavior of the PT-symmetric system in the linear regime, as well as a transition to nonreciprocity in the PT symmetry-breaking phase transition due to the significant enhancement of nonlinearity in the broken-symmetry phase. Our results represent a significant advance towards a new generation of synthetic optical systems enabling on-chip manipulation and control of light propagation.
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Submitted 21 August, 2013;
originally announced August 2013.
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Validity of single-channel model for a spin-orbit coupled atomic Fermi gas near Feshbach resonances
Authors:
**g-Xin Cui,
Xia-Ji Liu,
Gui Lu Long,
Hui Hu
Abstract:
We theoretically investigate a Rashba spin-orbit coupled Fermi gas near Feshbach resonances, by using mean-field theory and a two-channel model that takes into account explicitly Feshbach molecules in the close channel. In the absence of spin-orbit coupling, when the channel coupling $g$ between the closed and open channels is strong, it is widely accepted that the two-channel model is equivalent…
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We theoretically investigate a Rashba spin-orbit coupled Fermi gas near Feshbach resonances, by using mean-field theory and a two-channel model that takes into account explicitly Feshbach molecules in the close channel. In the absence of spin-orbit coupling, when the channel coupling $g$ between the closed and open channels is strong, it is widely accepted that the two-channel model is equivalent to a single-channel model that excludes Feshbach molecules. This is the so-called broad resonance limit, which is well-satisfied by ultracold atomic Fermi gases of $^{6}$Li atoms and $^{40}$K atoms in current experiments. Here, with Rashba spin-orbit coupling we find that the condition for equivalence becomes much more stringent. As a result, the single-channel model may already be insufficient to describe properly an atomic Fermi gas of $^{40}$K atoms at a moderate spin-orbit coupling. We determine a characteristic channel coupling strength $g_{c}$ as a function of the spin-orbit coupling strength, above which the single-channel and two-channel models are approximately equivalent. We also find that for narrow resonance with small channel coupling, the pairing gap and molecular fraction is strongly suppressed by SO coupling. Our results can be readily tested in $^{40}$K atoms by using optical molecular spectroscopy.
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Submitted 22 January, 2013;
originally announced January 2013.
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Carrier-Dopant Exchange Interactions in Mn-doped PbS Colloidal Quantum Dots
Authors:
Gen Long,
Biplob Barman,
Savas Delikanli,
Yu Tsung Tsai,
Peihong Zhang,
Athos Petrou,
Hao Zeng
Abstract:
Carrier-dopant exchange interactions in Mn-doped PbS colloidal quantum dots were studied by circularly polarized magneto-photoluminescence. Mn substitutional do** leads to paramagnetic behavior down to 5 K. While undoped quantum dots show negative circular polarization, Mn do** changes its sign to positive. A circular polarization value of 40% was achieved at T=7 K and B=7 tesla. The results a…
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Carrier-dopant exchange interactions in Mn-doped PbS colloidal quantum dots were studied by circularly polarized magneto-photoluminescence. Mn substitutional do** leads to paramagnetic behavior down to 5 K. While undoped quantum dots show negative circular polarization, Mn do** changes its sign to positive. A circular polarization value of 40% was achieved at T=7 K and B=7 tesla. The results are interpreted in terms of Zeeman splitting of the band edge states in the presence of carrier-dopant exchange interactions that are qualitatively different from the s,p-d exchange interactions in II-VI systems.
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Submitted 3 August, 2012;
originally announced August 2012.
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Anisotropic paramagnetism of monoclinic Nd2Ti2O7 single crystals
Authors:
Hui Xing,
Gen Long,
Hanjie Guo,
Youming Zou,
Chunmu Feng,
Guanghan Cao,
Hao Zeng,
Zhu-An Xu
Abstract:
The anisotropic paramagnetism and specific heat in Nd2Ti2O7 single crystals are investigated. Angular dependence of the magnetization and Weiss temperatures show the dominant role of the crystal field effect in the magnetization. By incorporating the results from the diluted samples, contributions to Weiss temperature from exchange interactions and crystal field interactions are isolated. The exch…
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The anisotropic paramagnetism and specific heat in Nd2Ti2O7 single crystals are investigated. Angular dependence of the magnetization and Weiss temperatures show the dominant role of the crystal field effect in the magnetization. By incorporating the results from the diluted samples, contributions to Weiss temperature from exchange interactions and crystal field interactions are isolated. The exchange interactions are found to be ferromagnetic, while the crystal field contributes a large negative part to the Weiss temperature, along all three crystallographic directions. The specific heat under magnetic field reveals a two-level Schottky ground state scheme, due to the Zeeman splitting of the ground state doublet, and the g-factors are thus determined. These observations provide solid foundations for further investigations of Nd2Ti2O7.
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Submitted 25 April, 2011;
originally announced April 2011.
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Non-Adiabatic Fluctuation in Measured Geometric Phase
Authors:
Qing Ai,
Wenyi Huo,
Gui Lu Long,
C. P. Sun
Abstract:
We study how the non-adiabatic effect causes the observable fluctuation in the "geometric phase" for a two-level system, which is defined as the experimentally measurable quantity in the adiabatic limit. From the Rabi's exact solution to this model, we give a reasonable explanation to the experimental discovery of phase fluctuation in the superconducting circuit system [P. J. Leek, \textit{et al…
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We study how the non-adiabatic effect causes the observable fluctuation in the "geometric phase" for a two-level system, which is defined as the experimentally measurable quantity in the adiabatic limit. From the Rabi's exact solution to this model, we give a reasonable explanation to the experimental discovery of phase fluctuation in the superconducting circuit system [P. J. Leek, \textit{et al}., Science \textbf{318}, 1889 (2007)], which seemed to be regarded as the conventional experimental error.
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Submitted 1 April, 2009; v1 submitted 31 March, 2009;
originally announced March 2009.
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Two Mode Photon Bunching Effect as Witness of Quantum Criticality in Circuit QED
Authors:
Qing Ai,
Ying-Dan Wang,
Guilu Long,
C. P. Sun
Abstract:
We suggest a scheme to probe critical phenomena at a quantum phase transition (QPT) using the quantum correlation of two photonic modes simultaneously coupled to a critical system. As an experimentally accessible physical implementation, a circuit QED system is formed by a capacitively coupled Josephson junction qubit array interacting with one superconducting transmission line resonator (TLR).…
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We suggest a scheme to probe critical phenomena at a quantum phase transition (QPT) using the quantum correlation of two photonic modes simultaneously coupled to a critical system. As an experimentally accessible physical implementation, a circuit QED system is formed by a capacitively coupled Josephson junction qubit array interacting with one superconducting transmission line resonator (TLR). It realizes an Ising chain in the transverse field (ICTF) which interacts with the two magnetic modes propagating in the TLR. We demonstrate that in the vicinity of criticality the originally independent fields tend to display photon bunching effects due to their interaction with the ICTF. Thus, the occurrence of the QPT is reflected by the quantum characteristics of the photonic fields.
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Submitted 15 December, 2008;
originally announced December 2008.
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Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO
Authors:
Michael A. McGuire,
Raphael P. Hermann,
Athena S. Sefat,
Brian C. Sales,
Rongying **,
David Mandrus,
Fernande Grandjean,
Gary J. Long
Abstract:
We present results of transport and magnetic properties and heat capacity measurements on polycrystalline CeFeAsO, PrFeAsO, and NdFeAsO. These materials undergo structural phase transitions, spin density wave-like magnetic ordering of small moments on iron, and antiferromagnetic ordering of rare earth moments. The temperature dependence of the electrical resistivity, Seebeck coefficient, thermal…
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We present results of transport and magnetic properties and heat capacity measurements on polycrystalline CeFeAsO, PrFeAsO, and NdFeAsO. These materials undergo structural phase transitions, spin density wave-like magnetic ordering of small moments on iron, and antiferromagnetic ordering of rare earth moments. The temperature dependence of the electrical resistivity, Seebeck coefficient, thermal conductivity, Hall coefficient, and magnetoresistance are reported. The magnetic behavior of the materials have been investigated using Mossbauer spectroscopy and magnetization measurements. Transport and magnetic properties are affected strongly by the structural and magnetic transitions, suggesting significant changes in the band structure and/or carrier mobilities occur, and phonon-phonon scattering is reduced upon transformation to the low temperature structure. Results are compared to recent reports for LaFeAsO, and systematic variations in properties as the identity of Ln is changed are observed and discussed. As Ln progresses across the rare-earth series from La to Nd, an increase in the hole contributions to Seebeck coefficient, and increases in magnetoresistance and the Hall coefficient are observed in the low temperature phase. Analysis of hyperfine fields at the iron nuclei determined from Mossbauer spectra indicates that the moment on Fe in the orthorhombic phase is nearly independent of the identity of Ln, in apparent contrast to reports of powder neutron diffraction refinements.
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Submitted 2 March, 2009; v1 submitted 4 November, 2008;
originally announced November 2008.
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Phase transitions in LaFeAsO: structural, magnetic, elastic, and transport properties, heat capacity and Mossbauer spectra
Authors:
Michael A. McGuire,
Andrew D. Christianson,
Athena S. Sefat,
Brian C. Sales,
Mark D. Lumsden,
Rongying **,
E. Andrew Payzant,
David Mandrus,
Yanbing Luan,
Veerle Keppens,
Vijayalaksmi Varadarajan,
Joseph W. Brill,
Raphael P. Hermann,
Moulay T. Sougrati,
Fernande Grandjean,
Gary J. Long
Abstract:
We present results from a detailed experimental investigation of LaFeAsO, the parent material in the series of "FeAs" based oxypnictide superconductors. Upon cooling this material undergoes a tetragonal-orthorhombic crystallographic phase transition at ~160 K followed closely by an antiferromagnetic ordering near 145 K. Analysis of these phase transitions using temperature dependent powder X-ray…
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We present results from a detailed experimental investigation of LaFeAsO, the parent material in the series of "FeAs" based oxypnictide superconductors. Upon cooling this material undergoes a tetragonal-orthorhombic crystallographic phase transition at ~160 K followed closely by an antiferromagnetic ordering near 145 K. Analysis of these phase transitions using temperature dependent powder X-ray and neutron diffraction measurements is presented. A magnetic moment of ~0.35 Bohr magnetons per iron is derived from Mossbauer spectra in the low temperature phase. Evidence of the structural transition is observed at temperatures well above the structural transition (up to near 200 K) in the diffraction data as well as the polycrystalline elastic moduli probed by resonant ultrasound spectroscopy measurements. The effects of the two phase transitions on the transport properties (resistivity, thermal conductivity, Seebeck coefficient, Hall coefficient), heat capacity, and magnetization of LaFeAsO are also reported, including a dramatic increase in the magnitude of the Hall coefficient below 160 K. The results suggest that the structural distortion leads to a localization of carriers on Fe, producing small local magnetic moments which subsequently order antiferromagnetically upon further cooling. Evidence of strong electron-phonon interactions in the high-temperature tetragonal phase is also observed.
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Submitted 21 August, 2008; v1 submitted 23 June, 2008;
originally announced June 2008.
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Induced Entanglement Enhanced by Quantum Criticality
Authors:
Qing Ai,
Tao Shi,
Guilu Long,
C. P. Sun
Abstract:
Two qubit entanglement can be induced by a quantum data bus interacting with them. In this paper, with the quantum spin chain in the transverse field as an illustration of quantum data bus, we show that such induced entanglement can be enhanced by the quantum phase transition (QPT) of the quantum data bus. We consider two external spins simultaneously coupled to a transverse field Ising chain. B…
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Two qubit entanglement can be induced by a quantum data bus interacting with them. In this paper, with the quantum spin chain in the transverse field as an illustration of quantum data bus, we show that such induced entanglement can be enhanced by the quantum phase transition (QPT) of the quantum data bus. We consider two external spins simultaneously coupled to a transverse field Ising chain. By adiabatically eliminating the degrees of the chain, the effective coupling between these two spins are obtained. The matrix elements of the effective Hamiltonian are expressed in terms of dynamical structure factor (DSF) of the chain. The DSF is the Fourier transformation of the Green function of Ising chain and can be calculated numerically by a method introduced in [O. Derzhko, T. Krokhmalskii, Phys. Rev. B \textbf{56}, 11659 (1997)]. Since all characteristics of QPT are embodied in the DSF, the dynamical evolution of the two external spins displays singularity in the vicinity of the critical point.
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Submitted 29 May, 2008;
originally announced May 2008.
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Creation of Entanglement between Two Electron Spins Induced by Many Spin Ensemble Excitations
Authors:
Qing Ai,
Yong Li,
Guilu Long,
C. P. Sun
Abstract:
We theoretically explore the possibility of creating spin entanglement by simultaneously coupling two electronic spins to a nuclear ensemble. By microscopically modeling the spin ensemble with a single mode boson field, we use the time-dependent Fröhlich transformation (TDFT) method developed most recently [Yong Li, C. Bruder, and C. P. Sun, Phys. Rev. A \textbf{75}, 032302 (2007)] to calculate…
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We theoretically explore the possibility of creating spin entanglement by simultaneously coupling two electronic spins to a nuclear ensemble. By microscopically modeling the spin ensemble with a single mode boson field, we use the time-dependent Fröhlich transformation (TDFT) method developed most recently [Yong Li, C. Bruder, and C. P. Sun, Phys. Rev. A \textbf{75}, 032302 (2007)] to calculate the effective coupling between the two spins. Our investigation shows that the total system realizes a solid state based architecture for cavity QED. Exchanging such kind effective boson in a virtual process can result in an effective interaction between two spins. It is discovered that a maximum entangled state can be obtained when the velocity of the electrons matches the initial distance between them in a suitable way. Moreover, we also study how the number of collective excitations influences the entanglement. It is shown that the larger the number of excitation is, the less the two spins entangle each other.
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Submitted 23 October, 2007; v1 submitted 13 March, 2007;
originally announced March 2007.
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A Magnetic and Moessbauer Spectral Study of Core/Shell Structured Fe/Au Nanoparticles
Authors:
Sung-** Cho,
Ahmed M. Shahin,
Gary J. Long,
Joseph E. Davies,
Kai Liu,
Fernande Grandjean,
Susan M. Kauzlarich
Abstract:
Fe/Au nanoparticles have been chemically synthesized through a reverse micelle reaction and investigated by both conventional and synchrotron based x-ray diffraction and by magnetic and Moessbauer spectral studies. The powder x-ray diffraction patterns reveal both the presence of crystalline alpha-iron and gold and the absence of any crystalline iron oxides or other crystalline products. First-o…
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Fe/Au nanoparticles have been chemically synthesized through a reverse micelle reaction and investigated by both conventional and synchrotron based x-ray diffraction and by magnetic and Moessbauer spectral studies. The powder x-ray diffraction patterns reveal both the presence of crystalline alpha-iron and gold and the absence of any crystalline iron oxides or other crystalline products. First-order reversal curves, along with the major hysteresis loops of the Fe/Au nanoparticles have been measured as a function of time in order to investigate the evolution of their magnetic properties. The iron-57 Moessbauer spectra of both uncoated iron nanoparticles and the Fe/Au nanoparticles have been measured at 78 and 295 K and indicate that two major iron containing components are present, namely the expected alpha-iron and the unexpected amorphous Fe1-xBx alloy; several poorly crystallized ordered iron(III) oxide components as well as paramagnetic iron(II) and iron(III) components are also observed. These results indicate that the Fe-core/Au-shell nanoparticles synthesized through reverse micelles are far more complex that had been believed.
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Submitted 16 December, 2005;
originally announced December 2005.
