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Bipolarized Weyl semimetals and quantum crystal valley Hall effect in two-dimensional altermagnetic materials
Authors:
Chao-Yang Tan,
Ze-Feng Gao,
Huan-Cheng Yang,
Kai Liu,
Peng-Jie Guo,
Zhong-Yi Lu
Abstract:
Magnetism and topology are two major areas of condensed matter physics. The combination of magnetism and topology gives rise to more novel physical effects, which have attracted strongly theoretical and experimental attention. Recently, the concept of altermagnetism has been introduced, characterized by a dual nature: real-space antiferromagnetism and reciprocal-space anisotropic spin polarization…
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Magnetism and topology are two major areas of condensed matter physics. The combination of magnetism and topology gives rise to more novel physical effects, which have attracted strongly theoretical and experimental attention. Recently, the concept of altermagnetism has been introduced, characterized by a dual nature: real-space antiferromagnetism and reciprocal-space anisotropic spin polarization. The amalgamation of altermagnetism with topology may lead to the emergence of previously unobserved topological phases and the associated physical effects. In this study, utilizing a four-band lattice model that incorporates altermagnetism and spin group symmetry, we demonstrate that type-I, type-II, and type-III bipolarized Weyl semimetals can exist in altermagnetic systems. Through the first-principles electronic structure calculations, we predict four ideal two-dimensional type-I altermagnetic bipolarized Weyl semimetals Fe$_2$WTe$_4$ and Fe$_2$MoZ$_4$ (Z=S,Se,Te). More significantly, we introduce the quantum crystal valley Hall effect, a phenomenon achievable in three of these materials namely Fe$_2$WTe$_4$, Fe$_2$MoS$_4$, and Fe$_2$MoTe$_4$, when spin-orbit coupling is considered. Furthermore, these materials have the potential to transition from a quantum crystal valley Hall phase to a Chern insulator phase under strain. In contrast, Fe$_2$MoSe$_4$ remains to be a Weyl semimetal under spin-orbit coupling but is distinguished by possessing only a single pair of Weyl points. Additionally, the position, polarization, and number of Weyl points in Fe$_2$WTe$_4$ and Fe$_2$MoZ$_4$ can be manipulated by adjusting the direction of the Néel vector. Consequently, Fe$_2$WTe$_4$ and Fe$_2$MoZ$_4$ emerge as promising experimental platforms for investigating the distinctive physical attributes of various altermagnetic topological phases.
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Submitted 24 June, 2024;
originally announced June 2024.
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Neural Quantum State Study of Fracton Models
Authors:
Marc Machaczek,
Lode Pollet,
Ke Liu
Abstract:
Fracton models host unconventional topological orders in three and higher dimensions and provide promising candidates for quantum memory platforms. Understanding their robustness against quantum fluctuations is an important task but also poses great challenges due to the lack of efficient numerical tools. In this work, we establish neural quantum states (NQS) as new tools to study phase transition…
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Fracton models host unconventional topological orders in three and higher dimensions and provide promising candidates for quantum memory platforms. Understanding their robustness against quantum fluctuations is an important task but also poses great challenges due to the lack of efficient numerical tools. In this work, we establish neural quantum states (NQS) as new tools to study phase transitions in these models. Exact and efficient parametrizations are derived for three prototypical fracton codes - the checkerboard and X-cube model, as well as Haah's code - both in terms of a restricted Boltzmann machine (RBM) and a correlation-enhanced RBM. We then adapt the correlation-enhanced RBM architecture to a perturbed checkerboard model and reveal its strong first-order phase transition between the fracton phase and a trivial field-polarizing phase. To this end, we simulate this highly entangled system on lattices of up to 512 qubits with high accuracy, representing a cutting-edge application of variational neural-network methods. Our work demonstrates the remarkable potential of NQS in studying complicated three-dimensional problems and highlights physics-oriented constructions of NQS architectures.
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Submitted 17 June, 2024;
originally announced June 2024.
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Correlated electrons of the flat band in charge density wave state of 4Hb-TaSexS2-x
Authors:
Yanyan Geng,
Jianfeng Guo,
Fanyu Meng,
Manyu Wang,
Shuo Mi,
Li Huang,
Rui Xu,
Fei Pang,
Kai Liu,
Shancai Wang,
Hong-Jun Gao,
Weichang Zhou,
Wei Ji,
Hechang Lei,
Zhihai Cheng
Abstract:
Many intriguing quantum states of matter, such as unconventional superconductivity, magnetic phases and fractional quantum Hall physics, emergent from the spatially-correlated localized electrons in the flat band of solid materials. By using scanning tunneling microscopy and spectroscopy (STM/STS), we report the real-space investigation of correlated electrons in the flat band of superlattice 4Hb-…
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Many intriguing quantum states of matter, such as unconventional superconductivity, magnetic phases and fractional quantum Hall physics, emergent from the spatially-correlated localized electrons in the flat band of solid materials. By using scanning tunneling microscopy and spectroscopy (STM/STS), we report the real-space investigation of correlated electrons in the flat band of superlattice 4Hb-TaSexS2-x. In contrast with the pristine 4Hb-TaS2, the selenium (Se) substitutions significantly affect the interfacial transfer of correlated electrons between the CDW states of 1T- and 1H-TaS2 layers, and contribute a real-space fractional electron-filling configurations with the distributed electron-filled and -void SoD clusters of 1T-layer. The site-specific STS spectra directly reveal their respective prominent spectra weight above EF and symmetric Mott-like spectra. In addition, the spatial distributions of these electron-filled SoDs in the 1T-layer of 4Hb-TaSe0.7S1.3 demonstrate different local short-range patterning, clearly indicating the complex neighboring interactions among the localized electrons in the flat band of 1T-layer. Our results not only provide an in-depth insight of correlated electrons in the flat CDW band, and provide a simple platform to manipulate the electron-correlation-related quantum states.
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Submitted 10 June, 2024;
originally announced June 2024.
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Phonon heat conduction across slippery interfaces in twisted graphite
Authors:
Fuwei Yang,
Wenjiang Zhou,
Zhibin Zhang,
Xuanyu Huang,
**gwen Zhang,
Nianjie Liang,
Wujuan Yan,
Yuxi Wang,
Mingchao Ding,
Quanlin Guo,
Yu Han,
Te-Huan Liu,
Kaihui Liu,
Quanshui Zheng,
Bai Song
Abstract:
Interlayer rotation in van der Waals (vdW) materials offers great potential for manipulating phonon dynamics and heat flow in advanced electronics with ever higher compactness and power density. However, despite extensive theoretical efforts in recent years, experimental measurements remain scarce especially due to the critical challenges of preparing single-crystalline twisted interfaces and prob…
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Interlayer rotation in van der Waals (vdW) materials offers great potential for manipulating phonon dynamics and heat flow in advanced electronics with ever higher compactness and power density. However, despite extensive theoretical efforts in recent years, experimental measurements remain scarce especially due to the critical challenges of preparing single-crystalline twisted interfaces and probing interfacial thermal transport with sufficient resolution. Here, we exploited the intrinsic twisted interfaces in highly oriented pyrolytic graphite (HOPG). By develo** novel experimental schemes based on microfabricated mesas, we managed to achieve simultaneous mechanical characterizations and thermal measurements. In particular, we pushed the HOPG mesas with a microprobe to identify and rotate single-crystalline intrinsic interfaces owing to their slippery nature as is well known in structural superlubricity. Remarkably, we observed over 30-fold suppression of thermal conductance for the slippery interfaces by using epitaxial graphite as a control. Nonetheless, the interfacial conductance remains around 600 $\mathrm{MWm^{-2}K^{-1}}$ which surpasses the highest values for artificially stacked vdW structures by more than five times. Further, atomic simulations revealed the predominant role of the transverse acoustic phonons. Together, our findings highlight a general physical picture that directly correlates interfacial thermal transport with sliding resistance, and lay the foundation for twist-enabled thermal management which are particularly beneficial to twistronics and slidetronics.
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Submitted 6 June, 2024;
originally announced June 2024.
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Correlated Electronic Structure and Density-Wave Gap in Trilayer Nickelate La4Ni3O10
Authors:
X. Du,
Y. D. Li,
Y. T. Cao,
C. Y. Pei,
M. X. Zhang,
W. X. Zhao,
K. Y. Zhai,
R. Z. Xu,
Z. K. Liu,
Z. W. Li,
J. K. Zhao,
G. Li,
Y. L. Chen,
Y. P. Qi,
H. J. Guo,
L. X. Yang
Abstract:
The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popular…
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The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popularity of nickelates in the Ruddlesden-Popper phase. In this study, combining high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structures of La4Ni3O10 at ambient pressure. We reveal a high resemblance of La4Ni3O10 with La3Ni2O7 in the orbital-dependent fermiology and electronic structure, suggesting a similar electronic correlation between the two compounds. The temperature-dependent measurements imply an orbital-dependent energy gap related to the density-wave transition in La4Ni3O10. By comparing the theoretical pressure-dependent electronic structure, clues about the superconducting high-pressure phase can be deduced from the ambient measurements, providing crucial information for deciphering the unconventional superconductivity in nickelates.
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Submitted 30 May, 2024;
originally announced May 2024.
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Even- and Odd-denominator Fractional Quantum Anomalous Hall Effect in Graphene Moire Superlattices
Authors:
Jian Xie,
Zihao Huo,
Xin Lu,
Zuo Feng,
Zaizhe Zhang,
Wenxuan Wang,
Qiu Yang,
Kenji Watanabe,
Takashi Taniguchi,
Kaihui Liu,
Zhida Song,
X. C. Xie,
Jianpeng Liu,
Xiaobo Lu
Abstract:
Fractional quantum anomalous hall effect (FQAHE), a transport effect with fractionally quantized Hall plateau emerging under zero magnetic field, provides a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FQAHE has been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire su…
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Fractional quantum anomalous hall effect (FQAHE), a transport effect with fractionally quantized Hall plateau emerging under zero magnetic field, provides a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FQAHE has been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire superlattices with anomalous Hall resistivity quantization number C <= 2/3 including the gapless composite Fermi-liquid state with C = 1/2. Here we experimentally demonstrate a new system of rhombohedral hexalayer graphene (RHG)/hBN moire superlattices showing both fractional and integer quantum anomalous Hall effects when the lowest flat Chern band is fractionally and fully filled at zero magnetic field. The zero-field Hall resistance Rho_xy = h/Ce2 is quantized to values corresponding to C = 3/5, 2/3, 5/7, 3/4, 7/9 and 1 at moire filling factors v = 3/5, 2/3, 5/7, 3/4, 7/9 and 1, respectively. Particularly, the C = 3/4 FQAHE state at v = 3/4 moire filling featuring a minimum of longitudinal resistance Rho_xx and fractionally quantized Hall resistance Rho_xy = 4h/3e2, is observed for the first time under zero magnetic field. Such a state may be similar to the C = 3/4 fractional quantum hall (FQHE) state recently observed at high magnetic fields9,10 and possibly host fractional charge excitations obeying non-Abelian statistics. By tuning the electrical and magnetic fields at 0 < v < 1, we have observed a sign reversal of the Hall resistivity for v = 2/3 state, indicating a transition from quasi-electron-like excitations to quasi-hole ones. Our experiment has established RHG/hBN moire superlattices a promising platform to explore quasi-particles with fractional charge excitations and non-Abelian anyons at zero magnetic field.
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Submitted 27 May, 2024;
originally announced May 2024.
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Correlated Charge Density Wave Insulators in Chirally Twisted Triple Bilayer Graphene
Authors:
Wenxuan Wang,
Gengdong Zhou,
Wenlu Lin,
Zuo Feng,
Yijie Wang,
Miao Liang,
Zaizhe Zhang,
Min Wu,
Le Liu,
Kenji Watanabe,
Takashi Taniguchi,
Wei Yang,
Guangyu Zhang,
Kaihui Liu,
**hua Gao,
Yang Liu,
X. C. Xie,
Zhida Song,
Xiaobo Lu
Abstract:
Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moiré structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition…
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Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moiré structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition to the correlated insulators showing at integer moiré fillings, commonly attributed to interaction induced symmetry broken isospin flavors in graphene, we observe abundant insulating states at half-integer moiré fillings, suggesting a longer-range interaction and the formation of charge density wave insulators which spontaneously break the moiré translation symmetry. With weak out-of-plane magnetic field applied, as observed half-integer filling states are enhanced and more quarter-integer filling states appear, pointing towards further quadrupling moiré unit cells. The insulating states at fractional fillings combined with Hartree-Fock calculations demonstrate the observation of a new type of correlated charge density wave insulators in graphene and points to a new accessible twist manner engineering correlated moiré electronics.
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Submitted 22 May, 2024;
originally announced May 2024.
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Fast \textit{ab initio} design of high-entropy magnetic thin films
Authors:
Dinesh Bista,
Willie B. Beeson,
Turbasu Sengupta,
Jerome Jackson,
Shiv N Khanna,
Kai Liu,
Gen Yin
Abstract:
We show that the magnetic properties of high-entropy alloys (HEAs) can be captured by \textit{ab initio} calculations within the coherent potential approximation, where the atomic details of the high-entropy mixing are considered as an effective medium that possesses the translational symmetry of the lattice. This is demonstrated using the face-centered cubic (FCC) phase of $\textrm{FeCoNiMnCu}$ a…
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We show that the magnetic properties of high-entropy alloys (HEAs) can be captured by \textit{ab initio} calculations within the coherent potential approximation, where the atomic details of the high-entropy mixing are considered as an effective medium that possesses the translational symmetry of the lattice. This is demonstrated using the face-centered cubic (FCC) phase of $\textrm{FeCoNiMnCu}$ and the $L1_0$ phase of $\textrm{(FeCoNiMnCu)Pt}$ by comparing the density functional theory (DFT) results with the experimental values. Working within the first Brillouin zone and the primitive unit cell, we show that DFT can capture the smooth profile of magnetic properties such as the saturation magnetization, the Curie temperature and the magnetic anisotropy, using only a sparse set of sampling points in the vast compositional space. The smooth profiles given by DFT indeed follow the experimental trend, demonstrating the promising potential of using machine learning to explore the magnetic properties of HEAs, by establishing reasonably large datasets with high-throughput calculations using density-functional theory.
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Submitted 28 April, 2024;
originally announced April 2024.
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Simulation-Free Determination of Microstructure Representative Volume Element Size via Fisher Scores
Authors:
Wei Liu,
Satyajit Mojumder,
Wing Kam Liu,
Wei Chen,
Daniel W. Apley
Abstract:
A representative volume element (RVE) is a reasonably small unit of microstructure that can be simulated to obtain the same effective properties as the entire microstructure sample. Finite element (FE) simulation of RVEs, as opposed to much larger samples, saves computational expense, especially in multiscale modeling. Therefore, it is desirable to have a framework that determines RVE size prior t…
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A representative volume element (RVE) is a reasonably small unit of microstructure that can be simulated to obtain the same effective properties as the entire microstructure sample. Finite element (FE) simulation of RVEs, as opposed to much larger samples, saves computational expense, especially in multiscale modeling. Therefore, it is desirable to have a framework that determines RVE size prior to FE simulations. Existing methods select the RVE size based on when the FE-simulated properties of samples of increasing size converge with insignificant statistical variations, with the drawback that many samples must be simulated. We propose a simulation-free alternative that determines RVE size based only on a micrograph. The approach utilizes a machine learning model trained to implicitly characterize the stochastic nature of the input micrograph. The underlying rationale is to view RVE size as the smallest moving window size for which the stochastic nature of the microstructure within the window is stationary as the window moves across a large micrograph. For this purpose, we adapt a recently developed Fisher score-based framework for microstructure nonstationarity monitoring. Because the resulting RVE size is based solely on the micrograph and does not involve any FE simulation of specific properties, it constitutes an RVE for any property of interest that solely depends on the microstructure characteristics. Through numerical experiments of simple and complex microstructures, we validate our approach and show that our selected RVE sizes are consistent with when the chosen FE-simulated properties converge.
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Submitted 7 April, 2024;
originally announced April 2024.
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Enhanced Robustness via Loss Engineering in Detuned Non-Hermitian Scattering Systems
Authors:
Jipeng Xu,
Yuanhao Mao,
Jianfa Zhang,
Biao Yang,
Ken Liu,
Zhihong Zhu
Abstract:
Non-Hermitian optics has revealed a series of counterintuitive phenomena with profound implications for sensing, lasing, and light manipulation. While the non-Hermiticity of Hamitonians is well-recognized, recent advancements in non-Hermitian physics have broadened to include scattering matrices, uncovering phenomena such as simultaneous lasing and coherent perfect absorption (CPA), reflectionless…
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Non-Hermitian optics has revealed a series of counterintuitive phenomena with profound implications for sensing, lasing, and light manipulation. While the non-Hermiticity of Hamitonians is well-recognized, recent advancements in non-Hermitian physics have broadened to include scattering matrices, uncovering phenomena such as simultaneous lasing and coherent perfect absorption (CPA), reflectionless scattering modes (RSMs), and coherent chaos control. Despite these developments, the investigation has predominantly focused on static and symmetric configurations, leaving the dynamic properties of non-Hermitian scattering in detuned systems largely unexplored. Bridging this gap, we extend certain stationary non-Hermitian scattering phenomena to detuned systems. We delve into the interplay between bi-directional RSMs and RSM exceptional points (EPs), and elucidate the global existence conditions for RSMs under detuning. Moreover, we introduces a novel category of EPs, characterized by the coalescence of transmission peaks, emerging independent with the presence of Hamiltonian EPs. The transmission EPs (TEPs) exhibit flat-top lineshape and can be extended to a square-shaped spectrum when detuning is involved, accompanied by a distinctive phase transition. Significantly, we demonstrate the applications of the TEPs in a one-dimensional coupled cavity system, engineered to enhance sensing robustness against environmental instabilities such as laser frequency drifts, which can exceed 10 MHz. This capability represents a substantial improvement over traditional sensing methods and an important improvement of fragile EP sensors. Our findings not only contribute to the broader understanding of non-Hermitian scattering phenomena but also paves the way for future advancements in non-Hermitian sensing technologies.
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Submitted 16 February, 2024;
originally announced April 2024.
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Layer-by-layer connection for large area single crystal boron nitride multilayer films
Authors:
Hui Shi,
Mingyuan Wang,
Hongying Chen,
Adrien Rousseau,
Junpeng Shu,
Ming Tian,
Ruowang Chen,
Juliette Plo,
Pierre Valvin,
Bernard Gil,
Jiajie Qi,
Qinghe Wang,
Kaihui Liu,
Mingliang Zhang,
Guillaume Cassabois,
Di Wu,
Neng Wan
Abstract:
Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two-dimensional materials, etc. Despite the recent successful fabrication of large-area BN single-crystals (typically <= 5 atomic layers), the scalable growth of th…
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Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two-dimensional materials, etc. Despite the recent successful fabrication of large-area BN single-crystals (typically <= 5 atomic layers), the scalable growth of thicker single-crystalline BN films still constitutes a great challenge. In this work, we demonstrate an approach to grow large-area multilayer single-crystal BN films by chemical vapor deposition on face-centered cubic Fe-Ni (111) single crystal alloy thin films with different stoichiometric phases. We show that the BN growth is greatly tunable and improved by increasing the Fe content in single-crystal Fe-Ni (111). The formation of pyramid-shaped multilayer BN domains with aligned orientation enables a continuous connection following a layer-by-layer, 'first-meet-first-connect', mosaic stitching mechanism. By means of selected area electron diffraction, micro-photoluminescence spectroscopy in the deep UV and high-resolution transmission electron microscopy, the layer-by-layer connection mechanism is unambiguously evidenced, and the stacking order has been verified to occur as unidirectional AB and ABC stackings, i.e., in the Bernal and rhombohedral BN phase.
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Submitted 12 April, 2024;
originally announced April 2024.
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Predicting the future applications of any stoichiometric inorganic material through learning from past literature
Authors:
Yu Wu,
Teng Liu,
Haiyang Song,
Yinghe Zhao,
**xing Gu,
Kailang Liu,
Huiqiao Li,
**lan Wang,
Tianyou Zhai
Abstract:
Through learning from past literature, artificial intelligence models have been able to predict the future applications of various stoichiometric inorganic materials in a variety of subfields of materials science. This capacity offers exciting opportunities for boosting the research and development (R&D) of new functional materials. Unfortunately, the previous models can only provide the predictio…
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Through learning from past literature, artificial intelligence models have been able to predict the future applications of various stoichiometric inorganic materials in a variety of subfields of materials science. This capacity offers exciting opportunities for boosting the research and development (R&D) of new functional materials. Unfortunately, the previous models can only provide the prediction for existing materials in past literature, but cannot predict the applications of new materials. Here, we construct a model that can predict the applications of any stoichiometric inorganic material (regardless of whether it is a new material). Historical validation confirms the high reliability of our model. Key to our model is that it allows the generation of the word embedding of any stoichiometric inorganic material, which cannot be achieved by the previous models. This work constructs a powerful model, which can predict the future applications of any stoichiometric inorganic material using only a laptop, potentially revolutionizing the R&D paradigm for new functional materials
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Submitted 9 April, 2024;
originally announced April 2024.
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Air-Water Interface-Assisted Synthesis and Charge Transport Characterization of Quasi-2D Polyacetylene Films with Enhanced Electron Mobility via Ring-Opening Polymerization of Pyrrole
Authors:
Kejun Liu,
Nadiia Pastukhova,
Egon Pavlica,
Gvido Bratina,
Xinliang Feng
Abstract:
Water surfaces catalyze some organic reactions more effectively, making them unique for 2D organic material synthesis. This report introduces a new synthesis method via surfactant-monolayer-assisted interfacial synthesis on water surfaces for ring-opening polymerization of pyrrole, producing distinct polypyrrole derivatives with polyacetylene backbones and ionic substitutions. The synthesis result…
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Water surfaces catalyze some organic reactions more effectively, making them unique for 2D organic material synthesis. This report introduces a new synthesis method via surfactant-monolayer-assisted interfacial synthesis on water surfaces for ring-opening polymerization of pyrrole, producing distinct polypyrrole derivatives with polyacetylene backbones and ionic substitutions. The synthesis result in quasi 2D polyacetylene (q2DPA) film with enhanced charge transport behavior. We employed time-of-flight photoconductivity (TOFP) measurements using pulsed laser light of tunable wavelength for photoexcitation of the charge carriers within the q2DPA film. The charge transport was measured in the lateral direction as a function of external bias voltage ranging from 0 V to 200 V. We observed high electron mobility (μ) of q2DPA reaching values of 375 cm2 V-1 s-1 at bias voltage Vb = -20V and photon energy of 3.8 eV.
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Submitted 8 April, 2024;
originally announced April 2024.
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Nagaoka Ferromagnetism in $3 \times 3$ Arrays and Beyond
Authors:
Yan Li,
Keyi Liu,
Garnett W. Bryant
Abstract:
Nagaoka ferromagnetism (NF) is a long-predicted example of itinerant ferromagnetism (IF) in the Hubbard model that has been studied theoretically for many years. The condition for NF, an infinite onsite Coulomb repulsion and a single hole in a half-filled band, does not arise naturally in materials, and was only realized recently for the first time in experiments on a 2 \times 2 array of gated qua…
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Nagaoka ferromagnetism (NF) is a long-predicted example of itinerant ferromagnetism (IF) in the Hubbard model that has been studied theoretically for many years. The condition for NF, an infinite onsite Coulomb repulsion and a single hole in a half-filled band, does not arise naturally in materials, and was only realized recently for the first time in experiments on a 2 \times 2 array of gated quantum dots. Atomically precise fabrication of dopant arrays in Si allows for engineering highly controllable systems with complex geometries. This makes dopant arrays a good candidate to study NF in different array geometries through analog quantum simulation. Here we present theoretical simulations done for $3 \times 3$ arrays and larger $N \times N $ arrays of quantum dots, and predict the emergence of different forms of ferromagnetism in different geometries. We find NF in perfect $3 \times 3$ arrays, as well as in $N \times N $ arrays for one hole less than half-filling. The ratio of the Hubbard on-site repulsion U to hop** t that defines the onset of NF increases as N increases, approaching the bulk limit of infinite U for large N. Additional simulations are done for geometries made by removing sites from $N \times N $ arrays. Different forms of ferromagnetism are found for different geometries. Loops show ferromagnetism, but only for three electrons. For loops, the critical U/t for the onset of ferromagnetism decreases as the loop length increases. We show that this different dependence on size for loops and $N \times N $ arrays can be understood by a scaling argument. Our results show how analog quantum simulation with small arrays can elucidate the role of effects including wavefunction connectivity; system geometry, size and symmetry; bulk and edge sites; and kinetic energy in determining the quantum magnetism of small systems.
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Submitted 5 April, 2024;
originally announced April 2024.
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Unveiling the origin of unconventional moire ferroelectricity
Authors:
Ruirui Niu,
Zhuoxian Li,
Xiangyan Han,
Qianling Liu,
Zhuangzhuang Qu,
Zhiyu Wang,
Chunrui Han,
Kenji Watanabe,
Takashi Taniguchi,
Kaihui Liu,
**hai Mao,
Wu Shi,
Bo Peng,
Zheng Vitto Han,
Zizhao Gan,
Jianming Lu
Abstract:
Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in bilayer graphene/boron nitride (BN) heterostructures, exhibits promising functionalities with topological current, superconductivity and synaptic responses. How…
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Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in bilayer graphene/boron nitride (BN) heterostructures, exhibits promising functionalities with topological current, superconductivity and synaptic responses. However, the debate about its mechanism - correlation driven charge transfer between two graphene layers - limits device reproducibility and hence large-scale production. Here by designing a single-layer graphene encapsulated by lattice-mismatched WSe2, we identify the ferroelectricity as stemming from - instead of graphene moire bands - the particular BN, where interfacial sliding ferroelectricity must play a role. With similar structures, multilayer twisted MoS2 is found to reproduce the ferroelectricity. The key is a conductive moire ferroelectric, where the screened gate and the pinned domain wall together result in unchanged electronic states, i.e. anomalous screening. The intimate connection to interfacial sliding ferroelectricity thus provides advantages of diverse choices of constituent materials and robust polarization switching while preserving the unique anomalous screening, paving the way to reproducible and reliable memory-based devices in artificial intelligence.
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Submitted 25 March, 2024;
originally announced March 2024.
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Single-electron states of phosphorus-atom arrays in silicon
Authors:
Maicol A. Ochoa,
Keyi Liu,
Michał Zieliński,
Garnett W. Bryant
Abstract:
We characterize the single-electron energies and the wavefunction structure of arrays with two, three, and four phosphorus atoms in silicon by implementing atomistic tight-binding calculations and analyzing wavefunction overlaps to identify the single-dopant states that hybridize to make the array states. The energy spectrum and wavefunction overlap variation as a function of dopant separation for…
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We characterize the single-electron energies and the wavefunction structure of arrays with two, three, and four phosphorus atoms in silicon by implementing atomistic tight-binding calculations and analyzing wavefunction overlaps to identify the single-dopant states that hybridize to make the array states. The energy spectrum and wavefunction overlap variation as a function of dopant separation for these arrays shows that hybridization mostly occurs between single-dopant states of the same type, with some cross-hybridization between $A_1$ and $E$ states occurring at short separations. We also observe energy crossings between hybrid states of different types as a function of impurity separation. We then extract tunneling rates for electrons in different dopants by map** the state energies into hop** Hamiltonians in the site representation. Significantly, we find that diagonal and nearest neighbor tunneling rates are similar in magnitude in a square array. Our analysis also accounts for the shift of the on-site energy at each phosphorus atom resulting from the nuclear potential of the other dopants. This approach constitutes a solid protocol to map the electron energies and wavefunction structure into Fermi-Hubbard Hamiltonians needed to implement and validate analog quantum simulations in these devices.
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Submitted 29 February, 2024;
originally announced February 2024.
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Time- and angle-resolved photoemission spectroscopy with wavelength-tunable pump and extreme ultraviolet probe enabled by twin synchronized amplifiers
Authors:
Takeshi Suzuki,
Yigui Zhong,
Kecheng Liu,
Teruto Kanai,
Jiro Itatani,
Kozo Okazaki
Abstract:
We describe a setup for time- and angle-resolved photoemission spectroscopy with wavelength-tunable excitation and extreme ultraviolet probe. It is enabled by using the 10 kHz twin Ti:sapphire amplifiers seeded by the common Ti:sapphire oscillator. The typical probe energy is 21.7 eV, and the wavelength of the pump excitation is tuned between 2400 and 1200 nm by using the optical parametric amplif…
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We describe a setup for time- and angle-resolved photoemission spectroscopy with wavelength-tunable excitation and extreme ultraviolet probe. It is enabled by using the 10 kHz twin Ti:sapphire amplifiers seeded by the common Ti:sapphire oscillator. The typical probe energy is 21.7 eV, and the wavelength of the pump excitation is tuned between 2400 and 1200 nm by using the optical parametric amplifier. The total energy resolution of 133 meV is achieved, and the time resolution is dependent on the wavelength for the pump, typically better than 100 fs. This system enables the pump energy to be matched with a specific interband transition and to probe a wider energy-momentum space. We present the results for the prototypical materials of highly oriented pyrolytic graphite and Bi2Se3 to show the performance of our system.
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Submitted 20 February, 2024;
originally announced February 2024.
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Understanding the wetting of transition metal dichalcogenides from an ab initio perspective
Authors:
Siheng Li,
Keyang Liu,
Jiří Klimeš,
Ji Chen
Abstract:
Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials been widely studied for emerging electronic properties. In this work, we use computational simulations to examine the water adsorption on TMDs systematically and the wetting property of WSe2 specifically. We start with density functional theory (DFT) based random phase approximation (RPA), assessing the performan…
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Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials been widely studied for emerging electronic properties. In this work, we use computational simulations to examine the water adsorption on TMDs systematically and the wetting property of WSe2 specifically. We start with density functional theory (DFT) based random phase approximation (RPA), assessing the performance of exchange-correlation functionals and comparing water adsorption on various TMDs. We also perform \textit{ab initio} molecular dynamics (AIMD) simulations on tungsten diselenide (WSe$_2$), from which we find that the distribution of interfacial water is sensitive to the exchange-correlation functional selected and a reasonable choice leads to a diffusive contact layer where water molecules prefer the "flat" configuration. Classical molecular dynamics (MD) simulations of water droplets on surfaces using appropriately parameterized water-surface interaction further confirm the dependence of water contact angle on the interaction and the interfacial water structure reproduced by different DFT functionals. Our study highlights the sensitivity of wetting to the water-substrate interaction and provides a starting point for a more accurate theoretical investigation of water-TMD interfaces.
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Submitted 18 February, 2024;
originally announced February 2024.
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Human-machine collaboration: ordering mechanism of rank$-2$ spin liquid on breathing pyrochlore lattice
Authors:
Nicolas Sadoune,
Ke Liu,
Han Yan,
Ludovic D. C. Jaubert,
Nic Shannon,
Lode Pollet
Abstract:
Machine learning algorithms thrive on large data sets of good quality. Here we show that they can also excel in a typical research setting with little data of limited quality, through an interplay of insights coming from machine, and human researchers. The question we address is the unsolved problem of ordering out of a spin-liquid phase described by an emergent rank-2 $U(1)$ gauge theory, as desc…
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Machine learning algorithms thrive on large data sets of good quality. Here we show that they can also excel in a typical research setting with little data of limited quality, through an interplay of insights coming from machine, and human researchers. The question we address is the unsolved problem of ordering out of a spin-liquid phase described by an emergent rank-2 $U(1)$ gauge theory, as described by [H. Yan it et al., Phys. Rev. Lett. 124, 127203 (2020)]. Published Monte Carlo simulations for this problem are consistent with a strong first-order phase transition, out of the R2-U1 spin liquid, but were too noisy for the form of low-temperature order to be identified. Using a highly-interpretable machine learning approach based on a support vector machine with a tensorial kernel (TKSVM), we re-analyze this Monte Carlo data, gaining new information about the form of order that could in turn be interpreted by traditionally-trained physicists. We find that the low-temperature ordered phase is a form of hybrid nematic order with emergent $Z_2$ symmetry, which allows for a sub-extensive set of domain walls at zero energy. This complex form of order arises due to a subtle thermal order-by-disorder mechanism, that can be understood from the fluctuations of the tensor electric field of the parent rank-2 gauge theory. These results were obtained by a back-and-forth process which closely resembles a collaboration between human researchers and machines. We argue that this "collaborative" approach may provide a blueprint for solving other problems that have not yielded to human insights alone.
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Submitted 16 February, 2024;
originally announced February 2024.
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Sliding ferroelectric memories and synapses
Authors:
Xiuzhen Li,
Biao Qin,
Yaxian Wang,
Yue Xi,
Zhiheng Huang,
Mengze Zhao,
Yalin Peng,
Zitao Chen,
Zitian Pan,
Jundong Zhu,
Chenyang Cui,
Rong Yang,
Wei Yang,
Sheng Meng,
Dongxia Shi,
Xuedong Bai,
Can Liu,
Na Li,
Jianshi Tang,
Kaihui Liu,
Luojun Du,
Guangyu Zhang
Abstract:
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroe…
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Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding its fundamental properties, functional devices based on sliding ferroelectrics, the key touchstone toward applications, remain elusive. Here, we demonstrate the rewritable, non-volatile memory devices at room-temperature utilizing a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer molybdenum disulfide. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs. Our work demonstrates the sliding ferroelectric memories and synaptic plasticity on both rigid and flexible substrates, highlighting the great potential of sliding ferroelectrics for emerging technological applications in brain-inspired in-memory computing, edge intelligence and energy-efficient wearable electronics.
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Submitted 29 January, 2024;
originally announced January 2024.
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Extremely strong spin-orbit coupling effect in light element altermagnetic materials
Authors:
Shuai Qu,
Ze-Feng Gao,
Hao Sun,
Kai Liu,
Peng-Jie Guo,
Zhong-Yi Lu
Abstract:
Spin-orbit coupling is a key to realize many novel physical effects in condensed matter physics, but the mechanism to achieve strong spin-orbit coupling effect in light element antiferromagnetic compounds has not been explored. In this work, based on symmetry analysis and the first-principles electronic structure calculations, we demonstrate that strong spin-orbit coupling effect can be realized i…
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Spin-orbit coupling is a key to realize many novel physical effects in condensed matter physics, but the mechanism to achieve strong spin-orbit coupling effect in light element antiferromagnetic compounds has not been explored. In this work, based on symmetry analysis and the first-principles electronic structure calculations, we demonstrate that strong spin-orbit coupling effect can be realized in light element altermagnetic materials, and propose a mechanism for realizing the corresponding effective spin-orbit coupling. This mechanism reveals the cooperative effect of crystal symmetry, electron occupation, electronegativity, electron correlation, and intrinsic spin-orbit coupling. Our work not only promotes the understanding of light element compounds with strong spin-orbit coupling effect, but also provides an alternative for realizing light element compounds with an effective strong spin-orbit coupling.
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Submitted 19 January, 2024;
originally announced January 2024.
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Viscosity bounds in liquids with different structure and bonding types
Authors:
M. Withington,
H. L. Devereux,
C. Cockrell,
A. M. Elena,
I. T. Todorov,
Z. K. Liu,
S. L. Shang,
J. S. McCloy,
P. A. Bingham,
K. Trachenko
Abstract:
Recently, it was realised that liquid viscosity has a lower bound which is nearly constant for all liquids and is governed by fundamental physical constants. This was supported by experimental data in noble and molecular liquids. Here, we perform large-scale molecular dynamics simulations to ascertain this bound in two other important liquid types: the ionic molten salt system LiF and metallic Pb.…
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Recently, it was realised that liquid viscosity has a lower bound which is nearly constant for all liquids and is governed by fundamental physical constants. This was supported by experimental data in noble and molecular liquids. Here, we perform large-scale molecular dynamics simulations to ascertain this bound in two other important liquid types: the ionic molten salt system LiF and metallic Pb. We find that these ionic and metallic systems similarly have lower viscosity bounds corresponding to the minimum of kinematic viscosity of about 10$^{-7}$ $\frac{{\rm m}^2}{\rm s}$. We show that this agrees with experimental data in other systems with different structures and bonding types, including noble, molecular, metallic and covalent liquids. This expands the universality of viscosity bounds into the main system types known.
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Submitted 6 January, 2024;
originally announced January 2024.
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Interference of Two-Dimensional Bose-Einstein Condensates in Micro-Gravity
Authors:
Tie-Fu Zhang,
Hao Zhu,
Wen-Kai Bai,
Kai Liu,
Yi-Hui Xing,
Wu-Ming Liu
Abstract:
We investigate the interference of two-dimensional Bose-Einstein condensates in micro-gravity, which influenced by the interaction strength, initial momentum, gravitational potential and phase difference. We demonstrate that the gravitational potential from the Earth can change the density distribution and phase distribution of the condensate's wave function. As time evolves, a portion of the grav…
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We investigate the interference of two-dimensional Bose-Einstein condensates in micro-gravity, which influenced by the interaction strength, initial momentum, gravitational potential and phase difference. We demonstrate that the gravitational potential from the Earth can change the density distribution and phase distribution of the condensate's wave function. As time evolves, a portion of the gravitational potential energy of the microscopic particles can be converted into kinetic energy, which changes the motion of the microscopic particles, and leads to the varying of the density and phase distribution of the wave function. Nevertheless, the influences of the Earth's gravity on the wave function can be eliminated by the micro-gravity environment, which confirmed by many micro-gravity cold atom experiments. Our results present the influences of gravity and other parameters on interference of Bose-Einstein condensates, which help us to reveal the intrinsic natures of the related theoretical predictions and experimental phenomena. Furthermore, our work builds a bridge between the related physical phenomena and our physical intuition about the Bose-Einstein condensates in micro-gravity environment.
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Submitted 1 January, 2024;
originally announced January 2024.
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Collective octahedral tilting in ultrathin Ruddlesden-Popper perovskite under terahertz light
Authors:
Kun Liu,
Jian Zhou
Abstract:
Perovskites have been applied in a wide range of fields such as solar cells and non-volatile memories due to their multiferroic nature and excellent photo-electric conversion capabilities. Recently, two-dimensional (2D) perovskites with a few atomic layers have been successfully synthesized, attracting significant attention for potential applications. In this work, we perform first-principles calc…
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Perovskites have been applied in a wide range of fields such as solar cells and non-volatile memories due to their multiferroic nature and excellent photo-electric conversion capabilities. Recently, two-dimensional (2D) perovskites with a few atomic layers have been successfully synthesized, attracting significant attention for potential applications. In this work, we perform first-principles calculations to investigate an ultrathin prototypical Ruddlesden-Popper phase, $\mathrm{Bi}_2\mathrm{FeO}_4$, with its thickness down to one unit cell. We show that this compound could exist in two (meta-)stable octahedral tilting phases, belonging to $P2_1/c$ and $C2/m$ space groups, respectively. Using the optomechanical theory, we suggest that reversible and non-volatile phase switching can be triggered using non-destructive terahertz light. In addition, the two phases show distinct optical reflectance spectrum in the visible light range, which can be used as an optical probe for phase transformation. This enables both "write" and "read" in an all-optical route.
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Submitted 27 December, 2023;
originally announced December 2023.
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Optical probe on do** modulation of magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$
Authors:
L. Wang,
S. Zhang,
B. B. Wang,
B. X. Gao,
L. Y. Cao,
X. T. Zhang,
X. Y. Zhang,
E. K. Liu,
R. Y. Chen
Abstract:
The magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ is extensively investigated due to its giant anomalous Hall effect (AHE).Recent studies demonstrate that the AHE can be effectively tuned by multi-electron Ni do**.To reveal the underlying mechanism of this significant manipulation,it is crucial to explore the band structure modification caused by Ni do**. Here,we study the electrodynamics of both…
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The magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ is extensively investigated due to its giant anomalous Hall effect (AHE).Recent studies demonstrate that the AHE can be effectively tuned by multi-electron Ni do**.To reveal the underlying mechanism of this significant manipulation,it is crucial to explore the band structure modification caused by Ni do**. Here,we study the electrodynamics of both pristine and Ni-doped Co$_{3-x}$Ni$_x$Sn$_2$S$_2$ with $x=$0, 0.11 and 0.17 by infrared spectroscopy. We find that the inverted energy gap around the Fermi level($E_{F}$) gets smaller at $x=$0.11,which is supposed to enhance the Berry curvature and therefore increase the AHE.Then $E_{F}$ moves out of this gap at $x=$0.17. Additionally,the low temperature carrier density is demonstrated to increase monotonically upon do**,which is different from previous Hall measurement results. We also observe the evidences of band broadening and exotic changes of high-energy interband transitions caused by do**.Our results provide detailed information about the band structure of Co$_{3-x}$Ni$_x$Sn$_2$S$_2$ at different do** levels,which will help to guide further studies on the chemical tuning of AHE.
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Submitted 8 January, 2024; v1 submitted 27 December, 2023;
originally announced December 2023.
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Hydrogel modified evaporation interface for highly stable membrane distillation
Authors:
Yanni Ma,
Zehua Yu,
Xifan Fu,
Zhi Huang,
Tenghui Qiu,
Na Zhao,
Huidong Liu,
Kang Liu
Abstract:
Surface effect of low-surface-tension contaminants accumulating at the evaporation surface can easily induce membrane wetting in the application of membrane distillation, especially in hypersaline scenarios. In this work, we propose a novel strategy to eliminate the surface effect and redistribute contaminants at the evaporation interface with simply incorporating a layer of hydrogel. The as-fabri…
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Surface effect of low-surface-tension contaminants accumulating at the evaporation surface can easily induce membrane wetting in the application of membrane distillation, especially in hypersaline scenarios. In this work, we propose a novel strategy to eliminate the surface effect and redistribute contaminants at the evaporation interface with simply incorporating a layer of hydrogel. The as-fabricated composite membrane exhibits remarkable stability, even when exposed to extreme conditions, such as a salt concentration of 5M and surfactant concentration of 8 mM. The breakthrough pressure of the membrane is as high as 20 bars in the presence of surfactants, surpassing commercial hydrophobic membranes by one to two magnitudes. Combined study of density functional theory and molecular dynamics simulations reveals the important role of hydrogel-surfactant interaction in suppressing the surface effect. As a proof of concept, we also demonstrate the stable performance of the membrane in processing synthetic wastewater containing surfactants of 144 mg L-1, mineral oils of 1g L-1 and NaCl of 192 g L-1, showing potential of the membrane in addressing challenges of hypersaline water treatment and zero liquid discharge processes.
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Submitted 5 December, 2023;
originally announced December 2023.
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Residual Stress-Driven Non-Euclidean Morphing in Origami Structures
Authors:
Zihe Liang,
Sibo Chai,
Qinyun Ding,
Kai Xiao,
Ke Liu,
Jiayao Ma,
Jaehyung Ju
Abstract:
Non-Euclidean surfaces are ubiquitous in numerous engineering fields, such as automotive, aerospace, and biomedical engineering domains. Morphing origami has numerous potential engineering applications, including soft robots, mechanical metamaterials, antennas, aerospace structures, and biomedical devices, owing to its intrinsic morphing features from two-dimensional (2D) planes to three-dimension…
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Non-Euclidean surfaces are ubiquitous in numerous engineering fields, such as automotive, aerospace, and biomedical engineering domains. Morphing origami has numerous potential engineering applications, including soft robots, mechanical metamaterials, antennas, aerospace structures, and biomedical devices, owing to its intrinsic morphing features from two-dimensional (2D) planes to three-dimensional (3D) surfaces. However, the current one-dimensional (1D) hinge deformation-driven transformation of foldable origami with rigid or slightly deformable panels cannot achieve a 3D complex and large curvilinear morphing. Moreover, most active origami structures use thin hinges with soft materials on their creases, thus resulting in a lower load capability. This study proposes a novel origami morphing method that demonstrates large free-form surface morphing, e.g., Euclidean to non-Euclidean surface morphing with shape-locking. We embedded tensorial anisotropic stress in origami panels during the extrusion-based 3D printing of shape memory polymers. The extrusion-based 3D printing of isotropic shape memory polymers can produce tensorial anisotropic stress in origami panels during fabrication, which can realize large non-Euclidean surface morphing with multiple deformation modes. The connecting topology of the origami unit cells influences the global morphing behavior owing to the interaction of the deformation of adjacent panels. Non-Euclidean morphing integrated with four-dimensional (4D) printing can provide multimodal shape locking at material and structural levels. The non-Euclidean surface morphing caused by tensorial residual stress in the panel during 3D printing expands the design space of origami and kirigami structures.
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Submitted 11 December, 2023;
originally announced December 2023.
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Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories
Authors:
Zhen-Cun Pan,
Dong Li,
Xing-Guo Ye,
Zheng Chen,
Zhao-Hui Chen,
An-Qi Wang,
Mingliang Tian,
Guangjie Yao,
Kaihui Liu,
Zhi-Min Liao
Abstract:
The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic computing. Two dimensional (2D) materials and their van der Waals heterostructures promote the development of MRAM technology, due to their atomically smooth interfaces and tunable physical properties. Here we report the al…
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The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic computing. Two dimensional (2D) materials and their van der Waals heterostructures promote the development of MRAM technology, due to their atomically smooth interfaces and tunable physical properties. Here we report the all-2D magnetoresistive memories featuring all electrical data reading and writing at room temperature based on WTe2/Fe3GaTe2/BN/Fe3GaTe2 heterostructures. The data reading process relies on the tunnel magnetoresistance of Fe3GaTe2/BN/Fe3GaTe2. The data writing is achieved through current induced polarization of orbital magnetic moments in WTe2, which exert torques on Fe3GaTe2, known as the orbit transfer torque (OTT) effect. In contrast to the conventional reliance on spin moments in spin transfer torque and spin orbit torque, the OTT effect leverages the natural out of plane orbital moments, facilitating field-free perpendicular magnetization switching through interface currents. Our results indicate that the emerging OTT MRAM is promising for low power, high performance memory applications.
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Submitted 2 December, 2023;
originally announced December 2023.
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BN-embedded monolayer graphene with tunable electronic and topological properties
Authors:
Chih-Piao Chuu,
Wei-En Tseng,
Kuan-Hung Liu,
Ching-Ming Wei,
Mei-Yin Chou
Abstract:
Finding an effective and controllable way to create a sizable energy gap in graphene-based systems has been a challenging topic of intensive research. We propose that the hybrid of boron nitride and graphene (h-BNC) at low BN do** serves as an ideal platform for band-gap engineering and valleytronic applications. We report a systematic first-principles study of the atomic configurations and band…
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Finding an effective and controllable way to create a sizable energy gap in graphene-based systems has been a challenging topic of intensive research. We propose that the hybrid of boron nitride and graphene (h-BNC) at low BN do** serves as an ideal platform for band-gap engineering and valleytronic applications. We report a systematic first-principles study of the atomic configurations and band gap opening for energetically favorable BN patches embedded in graphene. Based on first-principles calculations, we construct a tight-binding model to simulate general do** configurations in large supercells. Unexpectedly, the calculations find a linear dependence of the band gap on the effective BN concentration at low do**, arising from an induced effective on-site energy difference at the two C sublattices as they are substituted by B and N dopants alternately. The significant and tunable band gap of a few hundred meVs, with preserved topological properties of graphene and feasible sample preparation in the laboratory, presents great opportunities to realize valley physics applications in graphene systems at room temperature.
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Submitted 30 November, 2023;
originally announced November 2023.
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Exotic Symmetry Breaking Properties of Self-Dual Fracton Spin Models
Authors:
Giovanni Canossa,
Lode Pollet,
Miguel A. Martin-Delgado,
Hao Song,
Ke Liu
Abstract:
Fracton codes host unconventional topological states of matter and are promising for fault-tolerant quantum computation due to their large coding space and strong resilience against decoherence and noise. In this work, we investigate the ground-state properties and phase transitions of two prototypical self-dual fracton spin models -- the tetrahedral Ising model and the fractal Ising model -- whic…
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Fracton codes host unconventional topological states of matter and are promising for fault-tolerant quantum computation due to their large coding space and strong resilience against decoherence and noise. In this work, we investigate the ground-state properties and phase transitions of two prototypical self-dual fracton spin models -- the tetrahedral Ising model and the fractal Ising model -- which correspond to error-correction procedures for the representative fracton codes of type-I and type-II, the checkerboard code and the Haah's code, respectively, in the error-free limit. They are endowed with exotic symmetry-breaking properties that contrast sharply with the spontaneous breaking of global symmetries and deconfinement transition of gauge theories. To show these unconventional behaviors, which are associated with sub-dimensional symmetries, we construct and analyze the order parameters, correlators, and symmetry generators for both models. Notably, the tetrahedral Ising model acquires an extended semi-local ordering moment, while the fractal Ising model fits into a polynomial ring representation and leads to a fractal order parameter. Numerical studies combined with analytical tools show that both models experience a strong first-order phase transition with an anomalous $L^{-(D-1)}$ scaling, despite the fractal symmetry of the latter. Our work provides new understanding of sub-dimensional symmetry breaking and makes an important step for studying quantum-error-correction properties of the checkerboard and Haah's codes.
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Submitted 28 March, 2024; v1 submitted 18 November, 2023;
originally announced November 2023.
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Single-Phase L1$_{0}$-Ordered High Entropy Thin Films with High Magnetic Anisotropy
Authors:
Willie B. Beeson,
Dinesh Bista,
Huairuo Zhang,
Sergiy Krylyuk,
Albert V. Davydov,
Gen Yin,
Kai Liu
Abstract:
The vast high entropy alloy (HEA) composition space is promising for discovery of new material phases with unique properties. We explore the potential to achieve rare-earth-free high magnetic anisotropy materials in single-phase HEA thin films. Thin films of FeCoNiMnCu sputtered on thermally oxidized Si/SiO$_{2}$ substrates at room temperature are magnetically soft, with a coercivity on the order…
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The vast high entropy alloy (HEA) composition space is promising for discovery of new material phases with unique properties. We explore the potential to achieve rare-earth-free high magnetic anisotropy materials in single-phase HEA thin films. Thin films of FeCoNiMnCu sputtered on thermally oxidized Si/SiO$_{2}$ substrates at room temperature are magnetically soft, with a coercivity on the order of 10 Oe. After post-deposition rapid thermal annealing (RTA), the films exhibit a single face-centered-cubic phase, with an almost 40-fold increase in coercivity. Inclusion of 50 at.% Pt in the film leads to ordering of a single L1$_{0}$ high entropy intermetallic phase after RTA, along with high magnetic anisotropy and 3 orders of magnitude coercivity increase. These results demonstrate a promising HEA approach to achieve high magnetic anisotropy materials using RTA.
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Submitted 24 May, 2024; v1 submitted 11 November, 2023;
originally announced November 2023.
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Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4
Authors:
W. X. Zhao,
M. Yang,
R. Z. Xu,
X. Du,
Y. D. Li,
K. Y. Zhai,
C. Peng,
D. Pei,
H. Gao,
Y. W. Li,
L. X. Xu,
J. F. Han,
Y. Huang,
Z. K. Liu,
Y. G. Yao,
J. C. Zhuang,
Y. Du,
J. J. Zhou,
Y. L. Chen,
L. X. Yang
Abstract:
The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measureme…
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The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolutions, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is an explicit signature of the existence of hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase will lay the promising prospect of applications based on 1D spin-momentum locked current in electronic and spintronic devices.
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Submitted 6 November, 2023;
originally announced November 2023.
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Observation of Chern insulator in crystalline ABCA-tetralayer graphene with spin-orbit coupling
Authors:
Yating Sha,
Jian Zheng,
Kai Liu,
Hong Du,
Kenji Watanabe,
Takashi Taniguchi,
**feng Jia,
Zhiwen Shi,
Ruidan Zhong,
Guorui Chen
Abstract:
Degeneracies in multilayer graphene, including spin, valley, and layer degrees of freedom, are susceptible to Coulomb interactions and can result into rich broken-symmetry states. In this work, we report a ferromagnetic state in charge neutral ABCA-tetralayer graphene driven by proximity-induced spin-orbit coupling from adjacent WSe2. The ferromagnetic state is further identified as a Chern insula…
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Degeneracies in multilayer graphene, including spin, valley, and layer degrees of freedom, are susceptible to Coulomb interactions and can result into rich broken-symmetry states. In this work, we report a ferromagnetic state in charge neutral ABCA-tetralayer graphene driven by proximity-induced spin-orbit coupling from adjacent WSe2. The ferromagnetic state is further identified as a Chern insulator with Chern number of 4, and its Hall resistance reaches 78% and 100% quantization of h/4e2 at zero and 0.4 tesla, respectively. Three broken-symmetry insulating states, layer-antiferromagnet, Chern insulator and layer-polarized insulator and their transitions can be continuously tuned by the vertical displacement field. Remarkably, the magnetic order of the Chern insulator can be switched by three knobs, including magnetic field, electrical do**, and vertical displacement field.
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Submitted 27 October, 2023;
originally announced October 2023.
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Growth and applications of two-dimensional single crystals
Authors:
Zhibin Zhang,
Stiven Forti,
Wanqing Meng,
Sergio Pezzini,
Zehua Hu,
Camilla Coletti,
Xinran Wang,
Kaihui Liu
Abstract:
Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisi…
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Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisite to realize 2D-based high-performance applications. In this review, we aim to provide an in-depth analysis of the state-of-the-art technology for the growth and applications of 2D materials, with particular emphasis on single crystals. We first summarize the major growth strategies for monolayer 2D single crystals. Following that, we discuss the growth of multilayer single crystals, including the control of thickness, stacking sequence, and heterostructure composition. Then we highlight the exploration of 2D single crystals in electronic and optoelectronic devices. Finally, a perspective is given to outline the research opportunities and the remaining challenges in this field.
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Submitted 13 October, 2023; v1 submitted 12 October, 2023;
originally announced October 2023.
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Proton-mediated reversible switching of metastable ferroelectric phases with low operation voltages
Authors:
Xin He,
Yinchang Ma,
Chenhui Zhang,
Ai** Fu,
Wei** Hu,
Yang Xu,
Bin Yu,
Kai Liu,
Hua Wang,
Xixiang Zhang,
Fei Xue
Abstract:
The exploration of ferroelectric phase transitions enables an in-depth understanding of ferroelectric switching and promising applications in information storage. However, controllably tuning the dynamics of ferroelectric phase transitions remains challenging owing to inaccessible hidden phases. Here, using protonic gating technology, we create a series of metastable ferroelectric phases and demon…
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The exploration of ferroelectric phase transitions enables an in-depth understanding of ferroelectric switching and promising applications in information storage. However, controllably tuning the dynamics of ferroelectric phase transitions remains challenging owing to inaccessible hidden phases. Here, using protonic gating technology, we create a series of metastable ferroelectric phases and demonstrate their reversible transitions in van der Waals ferroelectric α-In2Se3 transistors. By varying the gate bias, protons can be incrementally injected or extracted, achieving controllable tuning of the ferroelectric α-In2Se3 protonic dynamics across the channel and obtaining numerous intermediate phases. Combining piezoelectric force microscopy and electrical hysteresis measurements, we surprisingly discover that the gate tuning of α-In2Se3 protonation is volatile, unlike the conventional gating effect, and the created new phases remain polar. Their origin, revealed by first-principles calculations, is related to the formation of metastable hydrogen-stabilized α-In2Se3 phases with switchable dipoles. Furthermore, our approach enables ultralow gate-voltage switching of different phases (below 0.4 V), and easy integration with transistor components. This work provides fundamental insights into the interactions between protons and ferroelectric phase transitions, providing a possible avenue for accessing hidden phases in ferroelectric switching and for develo** energy-efficient, multilevel-switching memory devices.
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Submitted 12 October, 2023;
originally announced October 2023.
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Realization of multiple topological states and topological phase transitions in (4,0) carbon nanotube derivatives
Authors:
Yan Gao,
Yu Du,
Yun-Yun Bai,
Weikang Wu,
Qiang Wang,
Yong Liu,
Kai Liu,
Zhong-Yi Lu
Abstract:
Exploring various topological states (TS) and topological phase transitions (TPT) has attracted great attention in condensed matter physics. However, so far, there is rarely a typical material system that can be used as a platform to study the TS and TPT as the system transforms from one-dimensional (1D) nanoribbons to two-dimensional (2D) sheet then to three-dimensional (3D) bulk. Here, we first…
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Exploring various topological states (TS) and topological phase transitions (TPT) has attracted great attention in condensed matter physics. However, so far, there is rarely a typical material system that can be used as a platform to study the TS and TPT as the system transforms from one-dimensional (1D) nanoribbons to two-dimensional (2D) sheet then to three-dimensional (3D) bulk. Here, we first propose that some typical TS in 1D, 2D, and 3D systems can be realized in a tight-binding (TB) model. Following the TB model and further based on first-principles electronic structure calculations, we demonstrate that the structurally stable (4,0) carbon nanotube derivatives are an ideal platform to explore the semiconductor/nodal-point semimetal states in 1D nanoribbons [1D-(4,0)-C16H4 and 1D-(4,0)-C32H4], nodal-ring semimetal state in 2D sheet [2D-(4,0)-C16], and nodal-cage semimetal state in 3D bulk [3D-(4,0)-C16]. Furthermore, we calculate the characteristic band structures and the edge/surface states of 2D-(4,0)-C16 and 3D-(4,0)-C16 to confirm their nontrivial topological properties. Our work not only provides new excellent 2D and 3D members for the topological carbon material family, but also serves as an ideal template for the study of TS and TPT with the change of system dimension.
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Submitted 8 October, 2023;
originally announced October 2023.
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Giant nonlinear optical wave mixing in van der Waals compound MnPSe3
Authors:
Li Yue,
Chang Liu,
Shanshan Han,
Hao Hong,
Yijun Wang,
Qiaomei Liu,
Jiajie Qi,
Yuan Li,
Dong Wu,
Kaihui Liu,
Enge Wang,
Tao Dong,
Nanlin Wang
Abstract:
Optical nonlinearities, one of the most fascinating properties of two-dimensional (2D) materials, are essential for exploring novel physics in 2D systems and develo** next-generation nonlinear optical applications. While tremendous efforts have been made to discover and optimize second-order nonlinear optical responses in various 2D materials, higher odd-order nonlinear processes, which are in g…
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Optical nonlinearities, one of the most fascinating properties of two-dimensional (2D) materials, are essential for exploring novel physics in 2D systems and develo** next-generation nonlinear optical applications. While tremendous efforts have been made to discover and optimize second-order nonlinear optical responses in various 2D materials, higher odd-order nonlinear processes, which are in general much less efficient than second order ones, have been paid less attention despite their scientific and applicational significance. Here we report giant odd-order nonlinear optical wave mixing in a correlated van der Waals insulator MnPSe3 at room temperature. Illuminated by two near-infrared femtosecond lasers simultaneously, it generates a series of degenerate and non-degenerate four- and six-wave mixing outputs, with conversion efficiencies up to the order of $10^{-4}$ and $10^{-6}$ for the four- and six-wave mixing processes, respectively, far exceeding the efficiencies of several prototypical nonlinear optical materials (GaSe, LiNbO3). This work highlights the intriguing prospect of transition metal phosphorous trichalcogenides for future research of the nonlinear light matter interactions in 2D systems and for potential nonlinear photonic applications.
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Submitted 28 September, 2023;
originally announced October 2023.
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Computing equilibrium free energies through a nonequilibrium quench
Authors:
Kangxin Liu,
Grant M. Rotskoff,
Eric Vanden-Eijnden,
Glen M. Hocky
Abstract:
Many methods to accelerate sampling of molecular configurations are based on the idea that temperature can be used to accelerate rare transitions. These methods typically compute equilibrium properties at a target temperature using reweighting or through Monte Carlo exchanges between replicas at higher temperatures. A recent paper demonstrated that accurate equilibrium densities of states can also…
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Many methods to accelerate sampling of molecular configurations are based on the idea that temperature can be used to accelerate rare transitions. These methods typically compute equilibrium properties at a target temperature using reweighting or through Monte Carlo exchanges between replicas at higher temperatures. A recent paper demonstrated that accurate equilibrium densities of states can also be computed through a nonequilibrium "quench" process, where sampling is performed at a higher temperature to encourage rapid mixing and then quenched to lower energy states with dissipative dynamics. Here we provide an implementation of the quench dynamics in LAMMPS and evaluate a new formulation of nonequilibrium estimators for the computation of partition functions or free energy surfaces (FESs) of molecular systems. We show that the method is exact for a minimal model of $N$-independent harmonic springs, and use these analytical results to develop heuristics for the amount of quenching required to obtain accurate sampling.= We then test the quench approach on alanine dipeptide, where we show that it gives an FES that is accurate near the most stable configurations using the quench approach, but disagrees with a reference umbrella sampling calculation in high FE regions. We then show that combining quenching with umbrella sampling allows the efficient calculation of the free energy in all regions. Moreover, by using this combined scheme, we obtain the FES across a range of temperatures at no additional cost, making it much more efficient than standard umbrella sampling if this information is required. Finally, we discuss how this approach can be extended to solute tempering and demonstrate that it is highly accurate for the case of solvated alanine dipeptide without any additional modifications.
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Submitted 28 November, 2023; v1 submitted 10 September, 2023;
originally announced September 2023.
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Schwinger boson symmetric spin liquids of Shastry-Sutherland model
Authors:
Ke Liu,
Fa Wang
Abstract:
Motivated by recent experimental and numerical evidences of deconfined quantum critical point and quantum spin-liquid states in spin-$1/2$ Heisenberg model on Shastry-Sutherland lattice, we studied possible symmetric spin liquid states and their proximate ordered states under Schwinger boson formalism. We found a symmetric gapped $Z_2$ spin-liquid state for intermediate model parameter…
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Motivated by recent experimental and numerical evidences of deconfined quantum critical point and quantum spin-liquid states in spin-$1/2$ Heisenberg model on Shastry-Sutherland lattice, we studied possible symmetric spin liquid states and their proximate ordered states under Schwinger boson formalism. We found a symmetric gapped $Z_2$ spin-liquid state for intermediate model parameter $0.66 < J_1/J_2 < 0.71$ under mean-field approximation. The Schwinger boson mean-field picture is partially supported by exact-diagonalization and self-consistent spin wave theory results.
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Submitted 19 March, 2024; v1 submitted 31 August, 2023;
originally announced August 2023.
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Nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2
Authors:
Shaohua Yan,
Hui-Hui He,
Yang Fu,
Ning-Ning Zhao,
Shangjie Tian,
Qiangwei Yin,
Fanyu Meng,
Xinyu Cao,
Le Wang,
Shanshan Chen,
Ki-Hoon Son,
Jun Woo Choi,
Hye** Ryu,
Shouguo Wang,
Xiao Zhang,
Kai Liu,
Hechang Lei
Abstract:
Itinerant ferromagnetism at room temperature is a key ingredient for spin transport and manipulation. Here, we report the realization of nearly-room-temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (323 K - 337 K) is almost unchanged when thickness is down to 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical ca…
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Itinerant ferromagnetism at room temperature is a key ingredient for spin transport and manipulation. Here, we report the realization of nearly-room-temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (323 K - 337 K) is almost unchanged when thickness is down to 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics.
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Submitted 24 August, 2023;
originally announced August 2023.
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Simultaneous 3D Construction and Imaging of Plant Cells Using Plasmonic Nanoprobe Assisted Multimodal Nonlinear Optical Microscopy
Authors:
Kun Liu,
Yutian Lei,
Dawei Li
Abstract:
Nonlinear optical (NLO) imaging has emerged as a promising plant cell imaging technique due to its large optical penetration, inherent 3D spatial resolution, and reduced photodamage, meanwhile exogenous nanoprobes are usually needed for non-signal target cell analysis. Here, we report in-vivo, simultaneous 3D labeling and imaging of potato cell structures using plasmonic nanoprobe-assisted multimo…
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Nonlinear optical (NLO) imaging has emerged as a promising plant cell imaging technique due to its large optical penetration, inherent 3D spatial resolution, and reduced photodamage, meanwhile exogenous nanoprobes are usually needed for non-signal target cell analysis. Here, we report in-vivo, simultaneous 3D labeling and imaging of potato cell structures using plasmonic nanoprobe-assisted multimodal NLO microscopy. Experimental results show that the complete cell structure could be imaged by the combination of second-harmonic generation (SHG) and two-photon luminescence (TPL) when noble metal silver or gold ions are added. In contrast, without noble metal ion solution, no NLO signals from the cell wall could be acquired. The mechanism can be attributed to noble metal nanoprobes with strong nonlinear optical responses formed along the cell walls via a femtosecond laser scan. During the SHG-TPL imaging process, noble metal ions that cross the cell wall could be rapidly reduced to plasmonic nanoparticles by fs laser and selectively anchored onto both sides of the cell wall, thereby leading to simultaneous 3D labeling and imaging of potato cells. Compared with traditional labeling technique that needs in-vitro nanoprobe fabrication and cell labeling, our approach allows for one-step, in-vivo labeling of plant cells, thus providing a rapid, cost-effective way for cellular structure construction and imaging.
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Submitted 22 August, 2023;
originally announced August 2023.
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Orbital-selective charge-density wave in TaTe$_4$
Authors:
R. Z. Xu,
X. Du,
J. S. Zhou,
X. Gu,
Q. Q. Zhang,
Y. D. Li,
W. X. Zhao,
F. W. Zheng,
M. Arita,
K. Shimada,
T. K. Kim,
C. Cacho,
Y. F. Guo,
Z. K. Liu,
Y. L. Chen,
L. X. Yang
Abstract:
TaTe$_4$, a metallic charge-density wave (CDW) material discovered decades ago, has attracted renewed attention due to its rich interesting properties such as pressure-induced superconductivity and candidate non-trivial topological phase. Here, using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of TaTe…
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TaTe$_4$, a metallic charge-density wave (CDW) material discovered decades ago, has attracted renewed attention due to its rich interesting properties such as pressure-induced superconductivity and candidate non-trivial topological phase. Here, using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of TaTe$_4$. At 26 K, we observe a CDW gap as large as 290 meV, which persists up to 500 K. The CDW-modulated band structure shows a complex reconstruction that closely correlates with the lattice distortion. Inside the CDW gap, there exist highly dispersive energy bands contributing to the remnant Fermi surface and metallic behavior in the CDW state. Interestingly, our ab-initio calculation reveals that the large CDW gap mainly opens in the electronic states with out-of-plane orbital components, while the in-gap metallic states originate from in-plane orbitals, suggesting an orbital texture that couples with the CDW order. Our results shed light on the interplay between electron, lattice, and orbital in quasi-one-dimensional CDW materials.
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Submitted 16 August, 2023;
originally announced August 2023.
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Ionically-Driven Synthesis and Exchange Bias in Mn$_{4}$N/MnN$_{x}$ Heterostructures
Authors:
Zhijie Chen,
Christopher J. Jensen,
Chen Liu,
Xixiang Zhang,
Kai Liu
Abstract:
Ferrimagnets have received renewed attention as a promising platform for spintronic applications. Of particular interest is the Mn4N from the $ε$-phase of the manganese nitride as an emergent rare-earth-free spintronic material due to its perpendicular magnetic anisotropy, small saturation magnetization, high thermal stability, and large domain wall velocity. We have achieved high-quality (001)-or…
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Ferrimagnets have received renewed attention as a promising platform for spintronic applications. Of particular interest is the Mn4N from the $ε$-phase of the manganese nitride as an emergent rare-earth-free spintronic material due to its perpendicular magnetic anisotropy, small saturation magnetization, high thermal stability, and large domain wall velocity. We have achieved high-quality (001)-ordered Mn$_{4}$N thin film by sputtering Mn onto $η$-phase Mn$_{3}$N$_{2}$ seed layers on Si substrates. As the deposited Mn thickness varies, nitrogen ion migration across the Mn$_{3}$N$_{2}$/Mn layers leads to a continuous evolution of the layers to Mn$_{3}$N$_{2}$/Mn$_{2}$N/Mn$_{4}$N, Mn$_{2}$N/Mn$_{4}$N, and eventually Mn$_{4}$N alone. The ferrimagnetic Mn$_{4}$N indeed exhibits perpendicular magnetic anisotropy, and forms via a nucleation-and-growth mechanism. The nitrogen ion migration is also manifested in a significant exchange bias, up to 0.3 T at 5 K, due to the interactions between ferrimagnetic Mn$_{4}$N and antiferromagnetic Mn$_{3}$N$_{2}$ and Mn$_{2}$N. These results demonstrate a promising all-nitride magneto-ionic platform with remarkable tunability for device applications.
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Submitted 22 August, 2023; v1 submitted 8 August, 2023;
originally announced August 2023.
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Highly Tunable Perpendicular Magnetic Anisotropy and Anisotropic Magnetoresistance in Ru-doped La0.67Sr0.33MnO3 Epitaxial Films
Authors:
Enda Hua,
Kunjie Dai,
Qing Wang,
Huan Ye,
Kuan Liu,
**feng Zhang,
**gdi Lu,
Kai Liu,
Feng **,
Lingfei Wang,
Wenbin Wu
Abstract:
As a prototypical half-metallic ferromagnet, La0.67Sr0.33MnO3 (LSMO) has been extensively studied due to its versatile physical properties and great potential in spintronic applications. However, the weak perpendicular magnetic anisotropy (PMA) limits the controllability and detection of magnetism in LSMO, thus hindering the realization of oxide-based spintronic devices with low energy consumption…
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As a prototypical half-metallic ferromagnet, La0.67Sr0.33MnO3 (LSMO) has been extensively studied due to its versatile physical properties and great potential in spintronic applications. However, the weak perpendicular magnetic anisotropy (PMA) limits the controllability and detection of magnetism in LSMO, thus hindering the realization of oxide-based spintronic devices with low energy consumption and high integration level. Motivated by this challenge, we develop an experimental approach to enhance the PMA of LSMO epitaxial films. By cooperatively introducing 4d Ru do** and a moderate compressive strain, the maximum uniaxial magnetic anisotropy in Ru-doped LSMO can reach 3.0 to 1E5 J/m3 at 10 K. Furthermore, we find a significant anisotropic magnetoresistance effect in these Ru-doped LSMO films, which is dominated by the strong PMA. Our findings offer an effective pathway to harness and detect the orientations of magnetic moments in LSMO films, thus promoting the feasibility of oxide-based spintronic devices, such as spin valves and magnetic tunnel junctions.
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Submitted 25 July, 2023;
originally announced July 2023.
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Ru do** induced spin frustration and enhancement of the room-temperature anomalous Hall effect in La2/3Sr1/3MnO3 films
Authors:
Enda Hua,
Liang Si,
Kunjie Dai,
Qing Wang,
Huan Ye,
Kuan Liu,
**feng Zhang,
**gdi Lu,
Kai Chen,
Feng **,
Lingfei Wang,
Wenbin Wu
Abstract:
In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, we exploit the R…
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In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, we exploit the Ru do**-enhanced AHE in LSMRO epitaxial films. As the B-site Ru do** level increases up to 20 percent, the anomalous Hall resistivity at room temperature can be enhanced from nOhmcm to uOhmcm scale. Ru do** leads to strong competition between ferromagnetic double-exchange interaction and antiferromagnetic super-exchange interaction. The resultant spin frustration and spin-glass state facilitate a strong skew-scattering process, thus significantly enhancing the extrinsic AHE. Our findings could pave a feasible approach for boosting the controllability and reliability of oxide-based spintronic devices.
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Submitted 23 July, 2023;
originally announced July 2023.
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Kagome surface states and weak electronic correlation in vanadium-kagome metals
Authors:
Jianyang Ding,
Ningning Zhao,
Zicheng Tao,
Zhe Huang,
Zhicheng Jiang,
Yichen Yang,
Soohyun Cho,
Zhengtai Liu,
Jishan Liu,
Yanfeng Guo,
Kai Liu,
Zhonghao Liu,
Dawei Shen
Abstract:
RV6Sn6 (R = Y and lanthanides) with two-dimensional vanadium-kagome surface states is an ideal platform to investigate kagome physics and manipulate the kagome features to realize novel phenomena. Utilizing the micron-scale spatially resolved angle-resolved photoemission spectroscopy and first-principles calculations, we report a systematical study of the electronic structures of RV6Sn6 (R = Gd, T…
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RV6Sn6 (R = Y and lanthanides) with two-dimensional vanadium-kagome surface states is an ideal platform to investigate kagome physics and manipulate the kagome features to realize novel phenomena. Utilizing the micron-scale spatially resolved angle-resolved photoemission spectroscopy and first-principles calculations, we report a systematical study of the electronic structures of RV6Sn6 (R = Gd, Tb, and Lu) on the two cleaved surfaces, i.e., the V- and RSn1-terminated (001) surfaces. The calculated bands without any renormalization match well with the main ARPES dispersive features, indicating the weak electronic correlation in this system. We observe 'W'-like kagome surface states around the Brillouin zone corners showing R-element-dependent intensities, which is probably due to various coupling strengths between V and RSn1 layers. Our finding suggests an avenue for tuning electronic states by interlayer coupling based on two-dimensional kagome lattices.
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Submitted 29 June, 2023;
originally announced June 2023.
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S2SNet: A Pretrained Neural Network for Superconductivity Discovery
Authors:
Ke Liu,
Kaifan Yang,
Jiahong Zhang,
Renjun Xu
Abstract:
Superconductivity allows electrical current to flow without any energy loss, and thus making solids superconducting is a grand goal of physics, material science, and electrical engineering. More than 16 Nobel Laureates have been awarded for their contribution to superconductivity research. Superconductors are valuable for sustainable development goals (SDGs), such as climate change mitigation, aff…
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Superconductivity allows electrical current to flow without any energy loss, and thus making solids superconducting is a grand goal of physics, material science, and electrical engineering. More than 16 Nobel Laureates have been awarded for their contribution to superconductivity research. Superconductors are valuable for sustainable development goals (SDGs), such as climate change mitigation, affordable and clean energy, industry, innovation and infrastructure, and so on. However, a unified physics theory explaining all superconductivity mechanism is still unknown. It is believed that superconductivity is microscopically due to not only molecular compositions but also the geometric crystal structure. Hence a new dataset, S2S, containing both crystal structures and superconducting critical temperature, is built upon SuperCon and Material Project. Based on this new dataset, we propose a novel model, S2SNet, which utilizes the attention mechanism for superconductivity prediction. To overcome the shortage of data, S2SNet is pre-trained on the whole Material Project dataset with Masked-Language Modeling (MLM). S2SNet makes a new state-of-the-art, with out-of-sample accuracy of 92% and Area Under Curve (AUC) of 0.92. To the best of our knowledge, S2SNet is the first work to predict superconductivity with only information of crystal structures. This work is beneficial to superconductivity discovery and further SDGs. Code and datasets are available in https://github.com/zjuKeLiu/S2SNet
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Submitted 28 June, 2023;
originally announced June 2023.
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Interaction-driven spontaneous broken-symmetry insulator and metals in ABCA tetralayer graphene
Authors:
Kai Liu,
Jian Zheng,
Yating Sha,
Bosai Lyu,
Feng** Li,
Youngju Park,
Yulu Ren,
Kenji Watanabe,
Takashi Taniguchi,
**feng Jia,
Weidong Luo,
Zhiwen Shi,
Jeil Jung,
Guorui Chen
Abstract:
Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes pronounced due to the significant reduction in kinetic energy. In this study, we employ phonon-polariton assisted near-field infrared imaging to determine the st…
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Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes pronounced due to the significant reduction in kinetic energy. In this study, we employ phonon-polariton assisted near-field infrared imaging to determine the stacking orders of tetralayer graphene devices. Through quantum transport measurements, we observe a range of spontaneous broken-symmetry states and their transitions, which can be finely tuned by carrier density n and electric displacement field D. Specifically, we observe a layer antiferromagnetic insulator at n = D = 0 with a gap of approximately 15 meV. Increasing D allows for a continuous phase transition from a layer antiferromagnetic insulator to a layer polarized insulator. By simultaneously tuning n and D, we observe isospin polarized metals, including spin-valley-polarized and spin-polarized metals. These transitions are associated with changes in Fermi surface topology and are consistent with the Stoner criteria. Our findings highlight the efficient fabrication of specially stacked multilayer graphene devices and demonstrate that crystalline multilayer graphene is an ideal platform for investigating a wide range of broken symmetries driven by Coulomb interactions.
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Submitted 19 June, 2023;
originally announced June 2023.
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Exploring charge and spin fluctuations in infinite-layer cuprate SrCuO$_{2}$ from a phonon perspective
Authors:
Xin Du,
Pei-Han Sun,
Ben-Chao Gong,
Jian-Feng Zhang,
Zhong-Yi Lu,
Kai Liu
Abstract:
The infinite-layer cuprate $A$CuO$_2$ ($A=$ Ca, Sr, Ba) has the simplest crystal structure among numerous cuprate superconductors and can serve a prototypical system to explore the unconventional superconductivity. Based on the first-principles electronic structure calculations, we have studied the electronic and magnetic properties of the infinite-layer cuprate SrCuO$_{2}$ from a phonon perspecti…
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The infinite-layer cuprate $A$CuO$_2$ ($A=$ Ca, Sr, Ba) has the simplest crystal structure among numerous cuprate superconductors and can serve a prototypical system to explore the unconventional superconductivity. Based on the first-principles electronic structure calculations, we have studied the electronic and magnetic properties of the infinite-layer cuprate SrCuO$_{2}$ from a phonon perspective. We find that interesting fluctuations of charges, electrical dipoles, and local magnetic moments can be induced by the zero-point vibrations of phonon modes in SrCuO$_{2}$ upon the hole do**. Among all optical phonon modes of SrCuO$_{2}$ in the antiferromagnetic Néel state, only the $A_{1}$$_g$ mode that involves the full-breathing O vibrations along the Cu-O bonds can cause significant fluctuations of local magnetic moments on O atoms and dramatic charge redistributions between Cu and O atoms. Notably, due to the zero-point vibration of the $A_{1g}$ mode, both the charge fluctuations on Cu and the electrical dipoles on O show a dome-like evolution with increasing hole do**, quite similar to the experimentally observed behavior of the superconducting $T_c$; in comparison, the fluctuations of local magnetic moments on O display a monotonic enhancement along with the hole do**. Further analyses indicate that around the optimal do**, there exist a large softening in the frequency of the $A_{1g}$ phonon mode and a van Hove singularity in the electronic structure close to the Fermi level, suggesting potential electron-phonon coupling. Our work reveals the important role of the full-breathing O phonon mode playing in the infinite-layer SrCuO$_{2}$, which may provide new insights in understanding the cuprate superconductivity.
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Submitted 16 June, 2023;
originally announced June 2023.
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Microscopic resolution of superconducting electrons in ultrahigh-pressed hydrogen sulfide
Authors:
Jian-Feng Zhang,
Bo Zhan,
Miao Gao,
Kai Liu,
Xinguo Ren,
Zhong-Yi Lu,
Tao Xiang
Abstract:
We investigate the electronic and phonon properties of hydrogen sulfide (SH$_3$) under ultrahigh pressure to elucidate the origin of its high-T$_c$ superconductivity. Contrary to the prevailing belief that the metalized S-H $σ$ bond is responsible, our analysis, based on the anisotropic Migdal-Eliashberg equation and the crystal orbital Hamilton population (COHP) calculation, reveals that the H-H…
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We investigate the electronic and phonon properties of hydrogen sulfide (SH$_3$) under ultrahigh pressure to elucidate the origin of its high-T$_c$ superconductivity. Contrary to the prevailing belief that the metalized S-H $σ$ bond is responsible, our analysis, based on the anisotropic Migdal-Eliashberg equation and the crystal orbital Hamilton population (COHP) calculation, reveals that the H-H $σ$-antibonding states play a dominant role in the large electron-phonon coupling that leads to the superconducting pairing in SH$_3$. Furthermore, by partially restricting the vibration of S atoms, we demonstrate that the S-H bonds provide subsidiary contributions to the pairing interaction. These findings shed light on the importance of the previously overlooked H-H $σ^*$ bonds in driving high-T$_c$ superconductivity in SH$_3$ and offer insights into the relationship between metallic H-H covalent antibonding and high-T$_c$ superconductivity in other hydrogen-rich materials under high pressure.
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Submitted 6 June, 2023;
originally announced June 2023.