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Robust Kagome Electronic Structure in Topological Quantum Magnets XMn6Sn6 (X = Dy, Tb, Gd, Y)
Authors:
X. Gu,
C. Chen,
W. S. Wei,
J. Y. Liu,
X. Du,
D. Pei,
J. S. Zhou,
R. Z. Xu,
Z. X. Yin,
W. X. Zhao,
Y. D. Li,
C. Jozwiak,
A. Bostwick,
E. Rotenberg,
D. Backes,
L. S. I. Veiga,
S. Dhesi,
T. Hesjedal,
G. van der Laan,
H. F. Du,
W. J. Jiang,
Y. P. Qi,
G. Li,
W. J. Shi,
Z. K. Liu
, et al. (2 additional authors not shown)
Abstract:
Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of XMn6Sn6…
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Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of XMn6Sn6 (X = Dy, Tb, Gd, Y) family compounds. We observe the Dirac fermion and the flat band arising from the magnetic kagome lattice of Mn atoms. Interestingly, the flat band locates in the same energy region in all compounds studied, regardless of their different magnetic ground states and 4f electronic configurations. These observations suggest a robust Mn magnetic kagome lattice across the XMn6Sn6 family, thus providing an ideal platform for the search and investigation on new emergent phenomena in magnetic topological materials.
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Submitted 20 March, 2022;
originally announced March 2022.
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Structural and magnetic properties of antiferromagnetic Ce$_2$IrGa$_{12}$
Authors:
Y. J. Zhang,
B. Shen,
F. Du,
Y. Chen,
J. Y. Liu,
Hanoh Lee,
M. Smidman,
H. Q. Yuan
Abstract:
We report a study of the structural and magnetic properties of single crystals of Ce$_2$IrGa$_{12}$. Ce$_2$IrGa$_{12}$ crystallizes in a layered tetragonal structure, and undergoes an antiferromagnetic transition below 3.1 K. We characterize the temperature-field phase diagrams of Ce$_2$IrGa$_{12}$ for fields both within the $ab$-plane and along the $c$-axis, where the presence of a field-induced…
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We report a study of the structural and magnetic properties of single crystals of Ce$_2$IrGa$_{12}$. Ce$_2$IrGa$_{12}$ crystallizes in a layered tetragonal structure, and undergoes an antiferromagnetic transition below 3.1 K. We characterize the temperature-field phase diagrams of Ce$_2$IrGa$_{12}$ for fields both within the $ab$-plane and along the $c$-axis, where the presence of a field-induced magnetic phase is found for in-plane fields. The ordering temperature is moderately enhanced upon the application of pressures up to 2.3~GPa, suggesting that Ce$_2$IrGa$_{12}$ corresponds to the well localized region of the Doniach phase diagram.
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Submitted 21 February, 2020;
originally announced February 2020.
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Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$
Authors:
J. Y. Liu,
J. Yu,
J. L. Ning,
H. M. Yi,
L. Miao,
L. J. Min,
Y. F. Zhao,
W. Ning,
K. A. Lopez,
Y. L. Zhu,
T. Pillsbury,
Y. B. Zhang,
Y. Wang,
J. Hu,
H. B. Cao,
F. Balakirev,
F. Weickert,
M. Jaime,
Y. Lai,
Kun Yang,
J. W. Sun,
N. Alem,
V. Gopalan,
C. Z. Chang,
N. Samarth
, et al. (3 additional authors not shown)
Abstract:
Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently co…
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Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we have also observed a two-dimensional chiral metal at the side surface, which represents a novel topological quantum liquid. These findings establish BaMnSb$_2$ as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.
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Submitted 4 November, 2020; v1 submitted 14 July, 2019;
originally announced July 2019.
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Electron mass enhancement and magnetic phase separation near the Mott transition in double layer ruthenates
Authors:
** Peng,
X. M. Gu,
G. T. Zhou,
W. Wang,
J. Y. Liu,
Yu Wang,
Z. Q. Mao,
X. S. Wu,
Shuai Dong
Abstract:
We present a detailed investigation of the specific heat in Ca$_3$(Ru$_{1-x}M_x$)$_2$O$_7$ ($M$ = Ti, Fe, Mn) single crystals. With different dopants and do** levels, three distinct regions are present, including a quasi-2D metallic state with an antiferromagnetic (AFM) order formed by ferromagnetic bilayers (AFM-$b$), a Mott insulating state with G-type AFM order (G-AFM) and a localized state w…
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We present a detailed investigation of the specific heat in Ca$_3$(Ru$_{1-x}M_x$)$_2$O$_7$ ($M$ = Ti, Fe, Mn) single crystals. With different dopants and do** levels, three distinct regions are present, including a quasi-2D metallic state with an antiferromagnetic (AFM) order formed by ferromagnetic bilayers (AFM-$b$), a Mott insulating state with G-type AFM order (G-AFM) and a localized state with a mixed AFM-b and G-AFM phase. Our specific heat data provide deep insights into the Mott transitions induced by Ti and Mn do**s. We observed not only an anomalous large mass enhancement but also an additional term in the specific heat i.e. $C\propto T^2$ in the localized region. The $C\propto T^2$ term is most likely due to the long-wavelength excitations with both FM and AFM components. A decrease of Debye temperature is observed in the G-type AFM region, indicating a lattice softening associated with the Mott transition.
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Submitted 1 October, 2018; v1 submitted 4 July, 2018;
originally announced July 2018.
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Quantum oscillation studies of topological semimetal candidate ZrGeM (M=S, Se, Te)
Authors:
J. Hu,
Y. L. Zhu,
D. Graf,
Z. J. Tang,
J. Y. Liu,
Z. Q. Mao
Abstract:
The WHM - type materials (W=Zr/Hf/La, H=Si/Ge/Sn/Sb, M=O/S/Se/Te) have been predicted to be a large pool of topological materials. These materials allow for fine tuning of spin-orbit coupling, lattice constant and structural dimensionality for various combinations of W, H and M elements, thus providing an excellent platform to study how these parameters' tuning affect topological semimetal state.…
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The WHM - type materials (W=Zr/Hf/La, H=Si/Ge/Sn/Sb, M=O/S/Se/Te) have been predicted to be a large pool of topological materials. These materials allow for fine tuning of spin-orbit coupling, lattice constant and structural dimensionality for various combinations of W, H and M elements, thus providing an excellent platform to study how these parameters' tuning affect topological semimetal state. In this work, we report the high field quantum oscillation studies on ZrGeM (M=S, Se, and Te). We have found the first experimental evidence for their theoretically-predicted topological semimetal states. From the angular dependence of quantum oscillation frequency, we have also studied the Fermi surface topologies of these materials. Moreover, we have compared Dirac electron behavior between the ZrGeM and ZrSiM systems, which reveals deep insights to the tuning of Dirac state by spin-orbit coupling and lattice constants in the WHM systems.
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Submitted 25 February, 2017; v1 submitted 8 February, 2017;
originally announced February 2017.
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Antiferromagnetism with divalent Eu in EuNi$_5$As$_3$
Authors:
W. B. Jiang,
M. Smidman,
W. Xie,
J. Y. Liu,
J. M. Lee,
J. M. Chen,
S. C. Ho,
H. Ishii,
K. D. Tsuei,
C. Y. Guo,
Y. J. Zhang,
Hanoh Lee,
H. Q. Yuan
Abstract:
We have successfully synthesized single crystals of EuNi$_5$As$_3$ using a flux method and we present a comprehensive study of the physical properties using magnetic susceptibility, specific heat, electrical resistivity, thermoelectric power and x-ray absorption spectroscopy (XAS) measurements. EuNi$_5$As$_3$ undergoes two close antiferromagnetic transitions at respective temperatures of $T_{N1}$…
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We have successfully synthesized single crystals of EuNi$_5$As$_3$ using a flux method and we present a comprehensive study of the physical properties using magnetic susceptibility, specific heat, electrical resistivity, thermoelectric power and x-ray absorption spectroscopy (XAS) measurements. EuNi$_5$As$_3$ undergoes two close antiferromagnetic transitions at respective temperatures of $T_{N1}$ = 7.2 K and $T_{N2}$ = 6.4 K, which are associated with the Eu$^{2+}$ moments. Both transitions are suppressed upon applying a field and we map the temperature-field phase diagrams for fields applied parallel and perpendicular to the easy $a$ axis. XAS measurements reveal that the Eu is strongly divalent, with very little temperature dependence, indicating the localized Eu$^{2+}$ nature of EuNi$_5$As$_3$, with a lack of evidence for heavy fermion behavior.
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Submitted 19 January, 2017;
originally announced January 2017.
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Temperature-tunable Fano resonance induced by strong coupling between Weyl fermions and phonons in TaAs
Authors:
B. Xu,
Y. M. Dai,
L. X. Zhao,
K. Wang,
R. Yang,
W. Zhang,
J. Y. Liu,
H. Xiao,
G. F. Chen,
S. A. Trugman,
J. -X. Zhu,
A. J. Taylor,
D. A. Yarotski,
R. P. Prasankumar,
X. G. Qiu
Abstract:
Strong coupling between discrete phonon and continuous electron-hole pair excitations can give rise to a pronounced asymmetry in the phonon line shape, known as the Fano resonance. This effect has been observed in a variety of systems, such as stripe-phase nickelates, graphene and high-$T_{c}$ superconductors. Here, we reveal explicit evidence for strong coupling between an infrared-active $A_1$ p…
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Strong coupling between discrete phonon and continuous electron-hole pair excitations can give rise to a pronounced asymmetry in the phonon line shape, known as the Fano resonance. This effect has been observed in a variety of systems, such as stripe-phase nickelates, graphene and high-$T_{c}$ superconductors. Here, we reveal explicit evidence for strong coupling between an infrared-active $A_1$ phonon and electronic transitions near the Weyl points (Weyl fermions) through the observation of a Fano resonance in the recently discovered Weyl semimetal TaAs. The resultant asymmetry in the phonon line shape, conspicuous at low temperatures, diminishes continuously as the temperature increases. This anomalous behavior originates from the suppression of the electronic transitions near the Weyl points due to the decreasing occupation of electronic states below the Fermi level ($E_{F}$) with increasing temperature, as well as Pauli blocking caused by thermally excited electrons above $E_{F}$. Our findings not only elucidate the underlying mechanism governing the tunable Fano resonance, but also open a new route for exploring exotic physical phenomena through the properties of phonons in Weyl semimetals.
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Submitted 29 August, 2016;
originally announced August 2016.
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Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2
Authors:
J. Y. Liu,
J. Hu,
D. Graf,
T. Zou,
M. Zhu,
Y. Shi,
S. Che,
S. M. A. Radmanesh,
C. N. Lau,
L. Spinu,
H. B. Cao,
X. Ke,
Z. Q. Mao
Abstract:
Relativistic fermions in topological quantum materials are characterized by linear energy-momentum dispersion near band crossing points. Under magnetic field, relativistic fermions acquire Berry phase of π in cyclotron motion, leading to a zeroth Landau level (LL) at the crossing point. Such field-independent zeroth LL, which distinguishes relativistic fermions from conventional electron systems,…
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Relativistic fermions in topological quantum materials are characterized by linear energy-momentum dispersion near band crossing points. Under magnetic field, relativistic fermions acquire Berry phase of π in cyclotron motion, leading to a zeroth Landau level (LL) at the crossing point. Such field-independent zeroth LL, which distinguishes relativistic fermions from conventional electron systems, is hardly probed in transport measurements since the Fermi energy (EF) is usually not right at the band crossing points in most topological materials. Here we report the observation of exotic quantum transport behavior resulting from the zeroth LL in a multiband topological semimetal YbMnBi2 which possesses linear band crossings both at and away from the Fermi level (FL). We show that the Dirac bands with the crossing points being above or below the FL leads to Shubnikov de-Haas oscillations in the in-plane magnetoresistance, whereas the Dirac bands with the crossing points being at the FL results in unusual angular dependences of the out-of-plane magnetoresistance and in-plane Hall resistivity due to the dependence of the zeroth LL's degeneracy on field orientation. Our results shed light on the transport mechanism of the zeroth LL's relativistic fermions in layered materials.
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Submitted 21 August, 2016;
originally announced August 2016.
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Optical Signatures of Weyl Points in TaAs
Authors:
B. Xu,
Y. M. Dai,
L. X. Zhao,
K. Wang,
R. Yang,
W. Zhang,
J. Y. Liu,
H. Xiao,
G. F. Chen,
A. J. Taylor,
D. A. Yarotski,
R. P. Prasankumar,
X. G. Qiu
Abstract:
We present a systematic study of both the temperature and frequency dependence of the optical response in TaAs, a material that has recently been realized to host the Weyl semimetal state. Our study reveals that the optical conductivity of TaAs features a narrow Drude response alongside a conspicuous linear dependence on frequency. The width of the Drude peak decreases upon cooling, following a…
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We present a systematic study of both the temperature and frequency dependence of the optical response in TaAs, a material that has recently been realized to host the Weyl semimetal state. Our study reveals that the optical conductivity of TaAs features a narrow Drude response alongside a conspicuous linear dependence on frequency. The width of the Drude peak decreases upon cooling, following a $T^{2}$ temperature dependence which is expected for Weyl semimetals. Two linear components with distinct slopes dominate the 5-K optical conductivity. A comparison between our experimental results and theoretical calculations suggests that the linear conductivity below $\sim$230~cm$^{-1}$ is a clear signature of the Weyl points lying in very close proximity to the Fermi energy.
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Submitted 1 October, 2015;
originally announced October 2015.
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Pi Berry phase and Zeeman splitting of TaP probed by high field magnetotransport measurements
Authors:
J. Hu,
J. Y. Liu,
D. Graf,
S. M. A Radmanesh,
D. J. Adams,
A. Chuang,
Y. Wang,
I. Chiorescu,
J. Wei,
L. Spinu,
Z. Q. Mao
Abstract:
The chiral anomaly-induced negative magnetoresistance and non-trivial Berry phase are two fundamental transport properties associated with the topological properties of Weyl fermions. In this work, we report the quantum transport of TaP single crystals in magnetic field up to 31T. Through the analyses of our magnetotransport data, we show TaP has the signatures of a Weyl state, including light eff…
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The chiral anomaly-induced negative magnetoresistance and non-trivial Berry phase are two fundamental transport properties associated with the topological properties of Weyl fermions. In this work, we report the quantum transport of TaP single crystals in magnetic field up to 31T. Through the analyses of our magnetotransport data, we show TaP has the signatures of a Weyl state, including light effective quasiparticle masses, ultrahigh carrier mobility, as well as negative longitudinal magnetoresistance. Furthermore, we have generalized the Lifshitz-Kosevich formula for Shubnikov-de Haas (SdH) oscillations with multi-frequencies, and determined the non-trivial Berry phase of Pi for multiple Fermi pockets in TaP through the direct fitting of the quantum oscillations. In high fields, we also probed signatures of Zeeman splitting, from which the Landé g-factor is extracted.
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Submitted 29 July, 2015;
originally announced July 2015.
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A magnetic topological semimetal Sr1-yMn1-zSb2 (y, z< 0.1)
Authors:
J. Y. Liu,
J. Hu,
Q. Zhang,
D. Graf,
H. B. Cao,
S. M. A. Radmanesh,
D. J. Adams,
Y. L. Zhu,
G. F. Cheng,
X. Liu,
W. A. Phelan,
J. Wei,
D. A. Tennant,
J. F. DiTusa,
I. Chiorescu,
L. Spinu,
Z. Q. Mao
Abstract:
Weyl (WSMs) evolve from Dirac semimetals in the presence of broken time-reversal symmetry (TRS) or space-inversion symmetry. The WSM phases in TaAs-class materials and photonic crystals are due to the loss of space-inversion symmetry. For TRS-breaking WSMs, despite numerous theoretical and experimental efforts, few examples have been reported. In this Article, we report a new type of magnetic semi…
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Weyl (WSMs) evolve from Dirac semimetals in the presence of broken time-reversal symmetry (TRS) or space-inversion symmetry. The WSM phases in TaAs-class materials and photonic crystals are due to the loss of space-inversion symmetry. For TRS-breaking WSMs, despite numerous theoretical and experimental efforts, few examples have been reported. In this Article, we report a new type of magnetic semimetal Sr1-yMn1-zSb2 (y,z<0.1) with nearly massless relativistic fermion behaviour (m*=0.04-0.05m0, where m0 is the free electron mass). This material exhibits a ferromagnetic order for 304K < T < 565K, but a canted antiferromagnetic order with a ferromagnetic component for T < 304K. The combination of relativistic fermion behaviour and ferromagnetism in Sr1-yMn1-zSb2 offers a rare opportunity to investigate the interplay between relativistic fermions and spontaneous TRS breaking.
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Submitted 10 August, 2017; v1 submitted 28 July, 2015;
originally announced July 2015.
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Enhancing Electron Coherence via Quantum Phonon Confinement in Atomically Thin Nb3SiTe6
Authors:
J. Hu,
X. Liu,
C. L. Yue,
J. Y. Liu,
H. W. Zhu,
J. B. He,
J. Wei,
Z. Q. Mao,
L. Yu. Antipina,
Z. I. Popov,
P. B. Sorokin,
T. J. Liu,
P. W. Adams,
S. M. A Radmanesh,
L. Spinu,
H. Ji,
D. Natelson
Abstract:
The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priori…
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The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priorities in the field is to search for new 2D crystalline systems with structural and electronic properties that can be exploited for device development. In this letter, we report on the unusual quantum transport properties of the 2D ternary transition metal chalcogenide - Nb3SiTe6. We show that the micaceous nature of Nb3SiTe6 allows it to be thinned down to one-unit-cell thick 2D crystals using microexfoliation technique. When the thickness of Nb3SiTe6 crystal is reduced below a few unit-cells thickness, we observed an unexpected, enhanced weak-antilocalization signature in magnetotransport. This finding provides solid evidence for the long-predicted suppression of electron-phonon interaction caused by the crossover of phonon spectrum from 3D to 2D.
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Submitted 1 April, 2015;
originally announced April 2015.
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Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$
Authors:
J. Hu,
J. Y. Liu,
Z. Q. Mao
Abstract:
We have studied the effect of spin-orbital coupling (SOC) on electronic transport properties of the thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$ via magnetoresistance (MR) measurements. We found that the strong SOC in this material results in weak antilocalization (WAL) effect, which can be well described by the three-dimensional weak localization model. The phase coherence length extracte…
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We have studied the effect of spin-orbital coupling (SOC) on electronic transport properties of the thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$ via magnetoresistance (MR) measurements. We found that the strong SOC in this material results in weak antilocalization (WAL) effect, which can be well described by the three-dimensional weak localization model. The phase coherence length extracted from theoretical fitting exhibits a power-law temperature dependence with an exponent around 2.1, indicating that the electron phase dephasing is governed by electron - transverse phonon interactions. Like in topological insulators, the WAL effect in $β$-K$_{2}$Bi$_{8}$Se$_{13}$ can be quenched by magnetic impurities (Mn) but is robust against non-magnetic impurities (Te). Although our magnetotransport studies do not provide any evidences for topological surface states, our analyses suggest that SOC plays an important role in determining thermoelectric properties of $β$-K$_{2}$Bi$_{8}$Se$_{13}$.
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Submitted 20 December, 2013;
originally announced December 2013.
