Showing 1–19 of 19 results for author: Liu, C W

Triple-top-gate technique for studying the strongly-interacting 2D electron systems in heterostructures

Authors: M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We develop a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts in the ungated area outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlap** independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in… ▽ More We develop a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts in the ungated area outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlap** independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in the strongly interacting limit at low electron densities, where the energy of the electron-electron interactions dominates all other energy scales. This design allows one to observe the two-threshold voltage-current characteristics that are a signature for the collective depinning and sliding of the electron solid. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Collective depinning and sliding of a quantum Wigner solid in a 2D electron system

Authors: M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility SiGe/Si/SiGe heterostructures. The observed results can be described by a phenomenological theory of the collective depinning of elastic structures, wh… ▽ More We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility SiGe/Si/SiGe heterostructures. The observed results can be described by a phenomenological theory of the collective depinning of elastic structures, which naturally generates a peak of a broadband current noise between the dynamic and static thresholds and changes to sliding of the solid over a pinning barrier above the static threshold. This gives compelling evidence for the electron solid formation in this electron system and shows the generality of the effect for different classes of electron systems. △ Less

Submitted 19 January, 2024; v1 submitted 4 October, 2023; originally announced October 2023.

Comments: As published

Journal ref: Phys. Rev. B 109, L041114 (2024)

Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system

Authors: M. Yu. Melnikov, A. A. Shakirov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related… ▽ More The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons' spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories. △ Less

Submitted 12 October, 2023; v1 submitted 9 April, 2023; originally announced April 2023.

Journal ref: Sci. Rep. 13, 17364 (2023)

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

Authors: D. Chen, S. Cai, N. -W. Hsu, S. -H. Huang, Y. Chuang, E. Nielsen, J. -Y. Li, C. W. Liu, T. M. Lu, D. Laroche

Abstract: We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor $ν_{\text{T}} = 1$ and $ν_{\text{T}} = 2$ are obse… ▽ More We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor $ν_{\text{T}} = 1$ and $ν_{\text{T}} = 2$ are observed in both density regimes, and the evolution of their excitation gaps is reported as a function of density. The $ν_{\text{T}} = 1$ gap evolution departs from the behavior generally observed for valley splitting in the single layer regime. Furthermore, by comparing the $ν_{\text{T}} = 2$ gap to the single particle tunneling energy, $Δ_{\text{SAS}}$, obtained from Schrödinger-Poisson (SP) simulations, evidence for the onset of spontaneous inter-layer coherence (SIC) is observed for a relative filling fraction imbalance smaller than ${\sim}50\%$ △ Less

Submitted 6 December, 2021; originally announced December 2021.

Comments: 6 pages, 3 figures, accepted in APL

Journal ref: Appl. Phys. Lett. 119, 223103 (2021)

Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

Authors: A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S. -H. Huang, C. W. Liu, Amy Y. X. Zhu, S. V. Kravchenko

Abstract: The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is… ▽ More The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $T_{\text{max}}$ decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of $T_{\text{max}}$ cannot be described by existing theories. The results indicate the spin-related origin of the effect. △ Less

Submitted 24 March, 2022; v1 submitted 10 June, 2021; originally announced June 2021.

Comments: As published

Journal ref: Sci. Rep. 12, 5080 (2022)

Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system

Authors: V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The minima at $p=3$ disappear below a certain electron density, although the surrounding minima at $p=2$ and $p=4$ survive at significantly lower densitie… ▽ More We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The minima at $p=3$ disappear below a certain electron density, although the surrounding minima at $p=2$ and $p=4$ survive at significantly lower densities. Furthermore, the onset for the resistance minimum at a filling factor $ν=3/5$ is found to be independent of the tilt angle of the magnetic field. These surprising results indicate the intersection or merging of the quantum levels of composite fermions with different valley indices, which reveals the valley effect on fractions. △ Less

Submitted 14 April, 2021; v1 submitted 14 January, 2021; originally announced January 2021.

Comments: As published

Journal ref: Phys. Rev. B 103, 161302 (2021)

Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells

Authors: A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. Radonjić, V. Dobrosavljević, S. -H. Huang, C. W. Liu, A. Y. X. Zhu, S. V. Kravchenko

Abstract: We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of… ▽ More We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities. △ Less

Submitted 26 August, 2020; v1 submitted 30 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 102, 081119(R) (2020)

Metallic state in a strongly interacting spinless two-valley electron system in two dimensions

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. -H. Huang, C. W. Liu, A. Y. X. Zhu, S. V. Kravchenko

Abstract: We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless". It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, st… ▽ More We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless". It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, still remains strong even when the spin degree of freedom is removed. Several independent methods have been used to establish the existence of the genuine MIT in the spinless two-valley 2D system. This is in contrast to the previous results obtained on more disordered silicon samples, where the polarizing magnetic field causes a complete quench of the metallic temperature behavior. △ Less

Submitted 14 January, 2020; v1 submitted 23 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 101, 045302 (2020)

Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S. -H. Huang, C. W. Liu

Abstract: The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samples, in ultra-high mobility SiGe/Si/SiGe quantum wells the critical electron density, $n_{\text{c}}$, of the MIT becomes smaller than the density,… ▽ More The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samples, in ultra-high mobility SiGe/Si/SiGe quantum wells the critical electron density, $n_{\text{c}}$, of the MIT becomes smaller than the density, $n_{\text{m}}$, where the effective mass at the Fermi level tends to diverge. Near the topological phase transition expected at $n_{\text{m}}$, the metallic temperature dependence of the resistance should be strengthened, which is consistent with the experimental observation of more than an order of magnitude resistance drop with decreasing temperature below $\sim1$ K. △ Less

Submitted 5 February, 2019; v1 submitted 29 August, 2018; originally announced August 2018.

Comments: Misprints corrected. As published

Journal ref: Phys. Rev. B 99, 081106(R) (2019); Erratum: Phys. Rev. B 107, 039902 (2023)

Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

Authors: V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3,… ▽ More We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3, and 4. Minima with $p$ = 3 disappear in magnetic fields below 7 Tesla, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors $ν$ = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Journal ref: JETP Lett. 107, 794 (2018)

Atomic-layer do** of SiGe heterostructures for atomic-precision donor devices

Authors: E. Bussmann, John King Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, J. -Y. Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, T. -M. Lu

Abstract: As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer do** of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated… ▽ More As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer do** of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer do** is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T$=0.3$ K show that the doped heterostructure has R$_{\square}=570\pm30$ $Ω$, yielding an electron density $n_{e}=2.1\pm0.1\times10^{14}$cm$^{-2}$ and mobility $μ_e=52\pm3$ cm$^{2}$ V$^{-1}$ s$^{-1}$, similar to saturated atomic-layer do** in pure Si and Ge. The magnitude of $μ_e$ and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer. △ Less

Submitted 17 October, 2017; originally announced October 2017.

Comments: 7 pages, 6 figures, to be submitted to Physical Review Materials. This work has been supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy (DOE). This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science

Journal ref: Phys. Rev. Materials 2, 066004 (2018)

Effective g factor of low-density two-dimensional holes in a Ge quantum well

Authors: T. M. Lu, C. T. Harris, S. -H. Huang, Y. Chuang, J. -Y. Li, C. W. Liu

Abstract: We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field perpendicular to the sample surface. Very large values of the effective $g$ factor, ranging from $\sim13$ to $\sim28$, are observed in the density range of… ▽ More We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field perpendicular to the sample surface. Very large values of the effective $g$ factor, ranging from $\sim13$ to $\sim28$, are observed in the density range of $1.4\times10^{10}$ cm$^{-2}$ to $1.4\times10^{11}$ cm$^{-2}$. When the magnetic field is oriented parallel to the sample surface, the effective $g$ factor is obtained from a protrusion in the magneto-resistance data that signifies full spin polarization. In the latter orientation, a small effective $g$ factor, $\sim1.3-1.4$, is measured in the density range of $1.5\times10^{10}$ cm$^{-2}$ to $2\times10^{10}$ cm$^{-2}$. This very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb. △ Less

Submitted 13 September, 2017; originally announced September 2017.

Journal ref: Appl. Phys. Lett. 111, 102108 (2017)

Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

Authors: M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and cr… ▽ More We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and crystallographic axes, a method of recalculating the magnetoresistance measured at $I\perp B_\parallel$ into the one measured at $I\parallel B_\parallel$ is suggested and is shown to yield results that agree with the experiment. △ Less

Submitted 8 December, 2017; v1 submitted 21 June, 2017; originally announced June 2017.

Comments: As published

Journal ref: J. Appl. Phys. 122, 224301 (2017)

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

Authors: T. M. Lu, L. A. Tracy, D. Laroche, S. -H. Huang, Y. Chuang, Y. -H. Su, J. -Y. Li, C. W. Liu

Abstract: Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show t… ▽ More Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of $\sim2.4\times 10^{10}$ cm$^{-2}$, this ratio grows greater than $1$, resulting in a ferromagnetic ground state at filling factor $ν=2$. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors. △ Less

Submitted 7 June, 2017; originally announced June 2017.

Journal ref: Scientific Reports 7, 2468 (2017)

Valence band structure calculations of strained Ge$_{1-x}$Sn$_x$ quantum well pFETs

Authors: H-S Lan, C W Liu

Abstract: The dependence of valence band structures of Ge$_{1-x}$Sn$_x$ with 0 $\leq$ $x$ $\leq$ 0.2 on Sn content, biaxial strain, and substrate orientation is calculated using the nonlocal empirical pseudopotential method. The first valence subband structure in p-type Ge cap/fully strained Ge$_{1-x}$Sn$_x$ quantum well/Ge (001) and (111) inversion layers are theoretically studied using the 6$\times$6 k… ▽ More The dependence of valence band structures of Ge$_{1-x}$Sn$_x$ with 0 $\leq$ $x$ $\leq$ 0.2 on Sn content, biaxial strain, and substrate orientation is calculated using the nonlocal empirical pseudopotential method. The first valence subband structure in p-type Ge cap/fully strained Ge$_{1-x}$Sn$_x$ quantum well/Ge (001) and (111) inversion layers are theoretically studied using the 6$\times$6 k$\cdot$p model. A wave-function coupling of a Ge cap with respect to a strained Ge$_{1-x}$Sn$_x$ quantum well, which is influenced by the cap thickness, valence band offset, and confined effective mass, changes the energy dispersion relation in the two-dimensional $k$-space. The increase in Sn content and the decrease in cap thickness increase the hole population in the strained Ge$_{1-x}$Sn$_x$ quantum well to reduce the transport effective mass at the zone center in the Ge/strained Ge$_{1-x}$Sn$_x$/Ge inversion layers. △ Less

Submitted 6 March, 2017; originally announced March 2017.

Comments: 6 pages, 6 figures, 2 tables

Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge$_{1-x}$Sn$_{x}$ alloys

Authors: H. -S. Lan, S. T. Chang, C. W. Liu

Abstract: Electronic structures of Ge$_{1-x}$Sn$_{x}$ alloys (0 $\leq$ $x$ $\leq$ 1) are theoretically studied by nonlocal empirical pseudopotential method. For relaxed Ge$_{1-x}$Sn$_{x}$, a topological semimetal is found for $\textit x$ $>$ 41$\%$ with gapless and band inversion at $Γ$ point, while there is an indirect-direct bandgap transition at $x$ = 8.5$\%$. For strained Ge$_{1-x}$Sn$_{x}$ on a Ge subs… ▽ More Electronic structures of Ge$_{1-x}$Sn$_{x}$ alloys (0 $\leq$ $x$ $\leq$ 1) are theoretically studied by nonlocal empirical pseudopotential method. For relaxed Ge$_{1-x}$Sn$_{x}$, a topological semimetal is found for $\textit x$ $>$ 41$\%$ with gapless and band inversion at $Γ$ point, while there is an indirect-direct bandgap transition at $x$ = 8.5$\%$. For strained Ge$_{1-x}$Sn$_{x}$ on a Ge substrate, semimetals with a negative indirect bandgap appear for $x$ $>$ 43$\%$, and the strained Ge$_{1-x}$Sn$_{x}$ on Ge is always an indirect bandgap semiconductor for $x$ $<$ 43$\%$. With appropriate biaxial compressive strains, a topological Dirac semimetal is found with band inversion at $Γ$ and one pair of Dirac cones along the [001] direction. △ Less

Submitted 28 February, 2017; v1 submitted 1 December, 2016; originally announced December 2016.

Comments: 5 pages, 5 figures, 1 table

Journal ref: Phys. Rev. B 95, 201201 (2017)

Indication of band flattening at the Fermi level in a strongly correlated electron system

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, $m$, with that at the Fermi level, $m_F$, and verify that the behaviours of these measured values are qualitatively different. With decreasing electron density (or increasing interaction strength), the mass at the Fermi level monotonically increases in the… ▽ More Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, $m$, with that at the Fermi level, $m_F$, and verify that the behaviours of these measured values are qualitatively different. With decreasing electron density (or increasing interaction strength), the mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-averaged mass saturates at low densities. The qualitatively different behaviour reveals a precursor to the interaction-induced single-particle spectrum flattening at the Fermi level in this electron system. △ Less

Submitted 7 November, 2017; v1 submitted 28 April, 2016; originally announced April 2016.

Journal ref: Scientific Reports 7, 14539 (2017)

Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobili… ▽ More We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential. △ Less

Submitted 5 March, 2015; v1 submitted 22 October, 2014; originally announced October 2014.

Comments: as published. arXiv admin note: substantial text overlap with arXiv:1409.2712

Journal ref: Appl. Phys. Lett. 106, 092102 (2015)

The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko, S. -H. Huang, C. W. Liu

Abstract: The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n_s, the effective mass has been found to grow with decreasing n_s, obeying the relation m*/m_b=n_s/(n_s-n_c), where m_b is the electron band mass and n_c~0… ▽ More The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n_s, the effective mass has been found to grow with decreasing n_s, obeying the relation m*/m_b=n_s/(n_s-n_c), where m_b is the electron band mass and n_c~0.54*10^11 cm^-2. In samples with maximum mobilities ranging between 90 and 220 m^2/Vs, the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples. △ Less

Submitted 9 September, 2014; originally announced September 2014.

Journal ref: JETP Lett. 100, 114 (2014)