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Distinguishing Surface and Bulk Electromagnetism via Their Dynamics in an Intrinsic Magnetic Topological Insulator
Authors:
Khanh Duy Nguyen,
Woojoo Lee,
Jianchen Dang,
Tongyao Wu,
Gabriele Berruto,
Chenhui Yan,
Chi Ian Jess Ip,
Haoran Lin,
Qiang Gao,
Seng Huat Lee,
Binghai Yan,
Chaoxing Liu,
Zhiqiang Mao,
Xiao-Xiao Zhang,
Shuolong Yang
Abstract:
The indirect exchange interaction between local magnetic moments via surface electrons has been long predicted to bolster the surface ferromagnetism in magnetic topological insulators (MTIs), which facilitates the quantum anomalous Hall effect. This unconventional effect is critical to determining the operating temperatures of future topotronic devices. However, the experimental confirmation of th…
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The indirect exchange interaction between local magnetic moments via surface electrons has been long predicted to bolster the surface ferromagnetism in magnetic topological insulators (MTIs), which facilitates the quantum anomalous Hall effect. This unconventional effect is critical to determining the operating temperatures of future topotronic devices. However, the experimental confirmation of this mechanism remains elusive, especially in intrinsic MTIs. Here we combine time-resolved photoemission spectroscopy with time-resolved magneto-optical Kerr effect measurements to elucidate the unique electromagnetism at the surface of an intrinsic MTI MnBi2Te4. Theoretical modeling based on 2D Ruderman-Kittel-Kasuya-Yosida interactions captures the initial quenching of a surface-rooted exchange gap within a factor of two but over-estimates the bulk demagnetization by one order of magnitude. This mechanism directly explains the sizable gap in the quasi-2D electronic state and the nonzero residual magnetization in even-layer MnBi2Te4. Furthermore, it leads to efficient light-induced demagnetization comparable to state-of-the-art magnetophotonic crystals, promising an effective manipulation of magnetism and topological orders for future topotronics.
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Submitted 28 June, 2024;
originally announced July 2024.
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Imaging semiconductor-to-metal transition and topological flat bands of twisted bilayer MoTe2
Authors:
Yufeng Liu,
Yu Gu,
Ting Bao,
Ning Mao,
Can Li,
Shudan Jiang,
Liang Liu,
Dandan Guan,
Yaoyi Li,
Hao Zheng,
Canhua Liu,
Kenji Watanabe,
Takashi Taniguchi,
Wenhui Duan,
**feng Jia,
Xiaoxue Liu,
Yang Zhang,
Tingxin Li,
Shiyong Wang
Abstract:
Two-dimensional (2D) moiré materials have emerged as a highly tunable platform for investigating novel quantum states of matter arising from strong electronic correlations and nontrivial band topology. Recently, topological flat bands formed in 2D semiconducting moiré superlattices have attracted great interests. In particular, a series of topological quantum phases, including the long-sought frac…
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Two-dimensional (2D) moiré materials have emerged as a highly tunable platform for investigating novel quantum states of matter arising from strong electronic correlations and nontrivial band topology. Recently, topological flat bands formed in 2D semiconducting moiré superlattices have attracted great interests. In particular, a series of topological quantum phases, including the long-sought fractional quantum anomalous Hall (FQAH) effect, have recently been experimentally observed in twisted bilayer MoTe2 (tMoTe2). However, the microscopic information of tMoTe2 moiré superlattice and its electronic structure is still lacking. Here, we present scanning tunneling microscopy and spectroscopy (STM/STS) studies of the tMoTe2 moiré superlattice, with twist angles ranging from about 2.3° to 2.8°. We developed a contact-STM mode to apply pressure on tMoTe2 and observed a phase transition from band insulator to metal of tMoTe2 under pressure at the charge neutrality point. STM imaging reveals a pronounced in-plane lattice reconstruction with periodic strain redistribution in the tMoTe2, which serves as gauge fields for generating topological moiré bands. Importantly, the electronic states of the low-energy moiré flat bands primarily concentrate at the XM and MX regions as revealed by STS imaging. Such spatial distributions are nicely reproduced by our first principal calculations with a large-scale basis, suggesting the low-energy moiré flat bands are formed through the hybridization of K valley bands of the top layer and K' valley bands of the bottom layer. Overall, our findings provide compelling real-space evidence of electronic structure under pressure and topological flat bands of tMoTe2, paving the way for further STM/STS investigations of correlated topological states within the topological flat band in gate-tunable tMoTe2 devices.
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Submitted 27 June, 2024;
originally announced June 2024.
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Valley polarization in twisted altermagnetism
Authors:
San-Dong Guo,
Yichen Liu,
Cheng-Cheng Liu
Abstract:
The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for altermagnetism of any type, such as $d$-wave, $g$-wave, and $i$-wave, by choosing the constituent monolayer with specific symmetry [arXiv:2404.17146 (2024)]. Here, w…
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The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for altermagnetism of any type, such as $d$-wave, $g$-wave, and $i$-wave, by choosing the constituent monolayer with specific symmetry [arXiv:2404.17146 (2024)]. Here, we propose a way for achieving valley polarization in twisted altermagnetism by applying out-of-plane external electric field. Since the out-of-plane electric field creates a layer-dependent electrostatic potential, the valleys form different layers will stagger, producing valley polarization. We also demonstrate the effectiveness of our proposed way using the twisted tight-binding model. It is found that the applied electric field can also induce valley/spin-gapless semiconductor and half metal besides valley polarization. Based on first-principles calculations, our proposed way to achieve valley polarization can be verified in twisted bilayer VOBr and monolayer $\mathrm{Ca(CoN)_2}$ as a special twisted altermagnet. These findings provide new opportunities for innovative spintronics, twistronics and valleytronics applications.
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Submitted 19 June, 2024;
originally announced June 2024.
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Unusual charge density wave introduced by Janus structure in monolayer vanadium dichalcogenides
Authors:
Ziqiang Xu,
Yan Shao,
Chun Huang,
Genyu Hu,
Shihao Hu,
Zhi-Lin Li,
Xiaoyu Hao,
Yanhui Hou,
Teng Zhang,
**-An Shi,
Chen Liu,
Jia-Ou Wang,
Wu Zhou,
Jiadong Zhou,
Wei Ji,
**gsi Qiao,
Xu Wu,
Hong-Jun Gao,
Yeliang Wang
Abstract:
As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fa…
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As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fabrication and material stability, the experimental visualization of the CDW states in 2D TMDs with Janus structure is still rare. Here, using surface selenization of VTe2, we fabricated monolayer Janus VTeSe. With scanning tunneling microscopy, an unusual root13-root13 CDW state with threefold rotational symmetry breaking was observed and characterized. Combined with theoretical calculations, we find this CDW state can be attributed to the charge modulation in the Janus VTeSe, beyond the conventional electron-phonon coupling. Our findings provide a promising platform for studying the CDW states and artificially tuning the electronic properties toward the applications.
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Submitted 17 June, 2024;
originally announced June 2024.
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Visualizing uniform lattice-scale pair density wave in single-layer FeSe/SrTiO3 films
Authors:
Yao Zhang,
Lianzhi Yang,
Chaofei Liu,
Wenhao Zhang,
Ying-Shuang Fu
Abstract:
Typical BCS superconductors are microscopically homogeneous in real space governed by the coherent Cooper pairs with high phase stiffness of superfluid density, which is characterized by a coherence length. However, a periodic oscillation of superconducting order parameter may develop driven by breaking the time-reversal or translational invariance. To date, such modulated orders were specific to…
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Typical BCS superconductors are microscopically homogeneous in real space governed by the coherent Cooper pairs with high phase stiffness of superfluid density, which is characterized by a coherence length. However, a periodic oscillation of superconducting order parameter may develop driven by breaking the time-reversal or translational invariance. To date, such modulated orders were specific to each material systems, with a periodicity much larger than the lattice constant. Here we report the direct observation of a uniform lattice-scale pair density wave (PDW) in single-layer FeSe/SrTiO3 films, enforced by peculiar interfacial structure of crystal symmetries breaking. Our spectroscopic imaging scanning tunneling microscopy unravels a spatial modulation of Cooper-pairing gap within a single unit-cell, depending on inequivalent atomic sites. Prominent periodic variation of superfluid density is visualized via Josephson current by a superconducting tip, indicating a real-space oscillation of phase stiffness. Such a lattice-scale superconducting modulation, which coexists with a larger length scale of PDW order, indicates the lattice-scale variation of both pairing strength and phase stiffness. Our findings provide new insights into the intertwined density-wave orders of quasiparticle character in correlated electronic systems, and provoke future studies on the unconventional pairing interaction and phase stiffness in the two-dimensional limit.
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Submitted 11 June, 2024; v1 submitted 9 June, 2024;
originally announced June 2024.
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Observation of floating surface state in obstructed atomic insulator candidate NiP$_2$
Authors:
Xiang-Rui Liu,
Ming-Yuan Zhu,
Yuanwen Feng,
Meng Zeng,
Xiao-Ming Ma,
Yu-Jie Hao,
Yue Dai,
Rong-Hao Luo,
Kohei Yamagami,
Yi Liu,
Shengtao Cui,
Zhe Sun,
Jia-Yu Liu,
Zhengtai Liu,
Mao Ye,
Dawei Shen,
Bing Li,
Chang Liu
Abstract:
Obstructed atomic insulator is recently proposed as an unconventional material, in which electric charge centers localized at sites away from the atoms. A half-filling surface state would emerge at specific interfaces cutting through these charge centers and avoid intersecting any atoms. In this article, we utilized angle-resolved photoemission spectroscopy and density functional theory calculatio…
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Obstructed atomic insulator is recently proposed as an unconventional material, in which electric charge centers localized at sites away from the atoms. A half-filling surface state would emerge at specific interfaces cutting through these charge centers and avoid intersecting any atoms. In this article, we utilized angle-resolved photoemission spectroscopy and density functional theory calculations to study one of the obstructed atomic insulator candidates, NiP$_2$. A floating surface state with large effective mass that is isolated from all bulk states is resolved on the (100) cleavage plane, distinct from previously reported surface states in obstructed atomic insulators that are merged into bulk bands. Density functional theory calculation results elucidate that this floating surface state is originated from the obstructed Wannier charge centers, albeit underwent surface reconstruction that splits the half-filled obstructed surface state. Our findings not only shed lights on the spectroscopy study of obstructed atomic insulators and obstructed surface states, but also provide possible route for development of new catalysts.
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Submitted 16 June, 2024; v1 submitted 8 June, 2024;
originally announced June 2024.
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Crystal Structure Prediction and Phase Stability in Highly Anharmonic Silver-Based Chalcohalide Anti-Perovskites
Authors:
Pol Benítez,
Cibrán López,
Cong Liu,
Ivan Caño,
Josep Lluís Tamarit,
Edgardo Saucedo,
Claudio Cazorla
Abstract:
Silver-based chalcohalide anti-perovskites (CAP), Ag$_{3}$BC (B = S, Se; C = Cl, Br, I), represent an emerging family of energy materials with intriguing optoelectronic, vibrational and ionic transport properties. However, the structural features and phase stability of CAP remain poorly investigated to date, hindering their fundamental understanding and potential integration into technological app…
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Silver-based chalcohalide anti-perovskites (CAP), Ag$_{3}$BC (B = S, Se; C = Cl, Br, I), represent an emerging family of energy materials with intriguing optoelectronic, vibrational and ionic transport properties. However, the structural features and phase stability of CAP remain poorly investigated to date, hindering their fundamental understanding and potential integration into technological applications. Here we employ theoretical first-principles methods based on density functional theory to fill this knowledge gap. Through crystal structure prediction techniques, ab initio molecular dynamics simulations, and quasi-harmonic free energy calculations, we unveil a series of previously overlooked energetically competitive phases and temperature-induced phase transitions for all CAP. Specifically, we identify a new cubic $P2_{1}3$ structure as the stable phase of all CAP containing S both at zero temperature and $T \neq 0$ K conditions. Consequently, our calculations suggest that the cubic $Pm\overline{3}m$ phase identified in room-temperature X-ray diffraction experiments is likely to be metastable. Furthermore, for CAP containing Se, we propose different orthorhombic ($Pca2_{1}$ and $P2_{1}2_{1}2_{1}$) and cubic ($I2_{1}3$) structures as the ground-state phases and reveal several phase transformations induced by temperature. This theoretical investigation not only identifies new candidate ground-state phases and solid-solid phase transformations for all CAP but also provides insights into potential stability issues affecting these highly anharmonic superionic materials.
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Submitted 7 June, 2024;
originally announced June 2024.
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Electrical control of intrinsic nonlinear Hall effect in antiferromagnetic topological insulator sandwiches
Authors:
Ruobing Mei,
Daniel Kaplan,
Binghai Yan,
Cui-Zu Chang,
Chao-Xing Liu
Abstract:
Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry via external electric fields can lead to a dramatic enhancement of NHE, thus allowing for an electric control of NHE. Microscopically, this is because breaking…
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Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry via external electric fields can lead to a dramatic enhancement of NHE, thus allowing for an electric control of NHE. Microscopically, this is because breaking PT symmetry can lift spin degeneracy of a Kramers' pair, giving rise to additional contributions within one Kramers' pair of bands. We demonstrate this enhancement through a model Hamiltonian that describes an antiferromagnetic topological insulator sandwich structure.
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Submitted 4 June, 2024;
originally announced June 2024.
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Electric-Field Control of Magnetic Skyrmion Chirality in a Centrosymmetric 2D van der Waals Magnet
Authors:
Myung-Geun Han,
Joachim Dahl Thomsen,
John P. Philbin,
Junsik Mun,
Eugene Park,
Fernando Camino,
Lukáš Děkanovský,
Chuhang Liu,
Zdenek Sofer,
Prineha Narang,
Frances M. Ross,
Yimei Zhu
Abstract:
Two-dimensional van der Waals magnets hosting topological magnetic textures, such as skyrmions, show promise for applications in spintronics and quantum computing. Electrical control of these topological spin textures would enable novel devices with enhanced performance and functionality. Here, using electron microscopy combined with in situ electric and magnetic biasing, we show that the skyrmion…
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Two-dimensional van der Waals magnets hosting topological magnetic textures, such as skyrmions, show promise for applications in spintronics and quantum computing. Electrical control of these topological spin textures would enable novel devices with enhanced performance and functionality. Here, using electron microscopy combined with in situ electric and magnetic biasing, we show that the skyrmion chirality, whether left-handed or right-handed, in insulating Cr2Ge2Te6, is controlled by external electric field direction applied during magnetic field cooling process. The electric-field-tuned chirality remains stable, even amid variations in magnetic and electric fields. Our theoretical investigation reveals that nonzero Dzyaloshinskii-Moriya interactions between the nearest neighbors, induced by the external electric field, change their sign upon reversing the electric field direction, thereby facilitating chirality selection. The electrical control of magnetic chirality demonstrated in this study can be extended to other non-metallic centrosymmetric skyrmion-hosting magnets, opening avenues for future device designs in topological spintronics and quantum computing.
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Submitted 2 June, 2024;
originally announced June 2024.
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Triple-top-gate technique for studying the strongly-interacting 2D electron systems in heterostructures
Authors:
M. Yu. Melnikov,
A. A. Shashkin,
S. -H. Huang,
C. W. Liu,
S. V. Kravchenko
Abstract:
We develop a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts in the ungated area outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlap** independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in…
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We develop a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts in the ungated area outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlap** independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in the strongly interacting limit at low electron densities, where the energy of the electron-electron interactions dominates all other energy scales. This design allows one to observe the two-threshold voltage-current characteristics that are a signature for the collective depinning and sliding of the electron solid.
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Submitted 28 May, 2024;
originally announced May 2024.
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Interaction-induced strong zero modes in short quantum dot chains with time-reversal symmetry
Authors:
A. Mert Bozkurt,
Sebastian Miles,
Sebastiaan L. D. ten Haaf,
Chun-Xiao Liu,
Fabian Hassler,
Michael Wimmer
Abstract:
We theoretically explore the emergence of strong zero modes in a two-site chain consisting of two quantum dots coupled due to a central dot that mediates electron hop** and singlet superconducting pairing. In the presence of time-reversal symmetry, the on-site Coulomb interaction leads to a three-fold ground-state degeneracy when tuning the system to a sweet spot as a function of the inter-dot c…
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We theoretically explore the emergence of strong zero modes in a two-site chain consisting of two quantum dots coupled due to a central dot that mediates electron hop** and singlet superconducting pairing. In the presence of time-reversal symmetry, the on-site Coulomb interaction leads to a three-fold ground-state degeneracy when tuning the system to a sweet spot as a function of the inter-dot couplings. This degeneracy is protected against changes of the dot energies in the same way as "poor man's'' Majorana bound states in short Kitaev chains. In the limit of strong interactions, this protection is maximal and the entire spectrum becomes triply degenerate, indicating the emergence of a ''poor man's'' version of a strong zero mode. We explain the degeneracy and protection by constructing corresponding Majorana Kramers-pair operators and $\mathbb{Z}_3$-parafermion operators. The strong zero modes share many properties of Majorana bound states in short Kitaev chains, including the stability of zero-bias peaks in the conductance and the behavior upon coupling to an additional quantum dot. However, they can be distinguished through finite-bias spectroscopy and the exhibit a different behavior when scaling to longer chains.
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Submitted 23 May, 2024;
originally announced May 2024.
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Spinons in a new Shastry-Sutherland lattice magnet Pr$_2$Ga$_2$BeO$_7$
Authors:
N. Li,
A. Brassington,
M. F. Shu,
Y. Y. Wang,
H. Liang,
Q. J. Li,
X. Zhao,
P. J. Baker,
H. Kikuchi,
T. Masuda,
G. Duan,
C. Liu,
H. Wang,
W. Xie,
R. Zhong,
J. Ma,
R. Yu,
H. D. Zhou,
X. F. Sun
Abstract:
Identifying the elusive spinon excitations in quantum spin liquid (QSL) materials is what scientists have long sought for. Recently, thermal conductivity ($κ$) has emerged to be a decisive probe because the fermionic nature of spinons leads to a characteristic nonzero linear $κ_0/T$ term while approaching zero Kelvin. So far, only a few systems have been reported to exhibit such term. Here, we rep…
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Identifying the elusive spinon excitations in quantum spin liquid (QSL) materials is what scientists have long sought for. Recently, thermal conductivity ($κ$) has emerged to be a decisive probe because the fermionic nature of spinons leads to a characteristic nonzero linear $κ_0/T$ term while approaching zero Kelvin. So far, only a few systems have been reported to exhibit such term. Here, we report a $κ_0/T \approx$ 0.01 WK$^{-2}$m$^{-1}$, the largest $κ_0/T$ value ever observed in magnetic oxide QSL candidates, in a new quantum magnet Pr$_2$Ga$_2$BeO$_7$ with a Shastry-Sutherland lattice (SSL). Its QSL nature is further supported by the power-law temperature dependence of the specific heat, a plateau of muon spin relaxation rate, and gapless inelastic neutron spectra. Our theoretical analysis reveals that the introduction of XY spin anisotropy is the key for Pr$_2$Ga$_2$BeO$_7$ to be the first QSL realized on the SSL, after more than four decades of extensive studies on this celebrated magnetically frustrated lattice.
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Submitted 22 May, 2024;
originally announced May 2024.
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Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes
Authors:
Chi Ian Jess Ip,
Qiang Gao,
Khanhy Du Nguyen,
Chenhui Yan,
Gangbin Yan,
Eli Hoenig,
Thomas S. Marchese,
Minghao Zhang,
Woojoo Lee,
Hossein Rokni,
Ying Shirley Meng,
Chong Liu,
Shuolong Yang
Abstract:
Ultrathin topological insulator membranes are building blocks of exotic quantum matter. However, traditional epitaxy of these materials does not facilitate stacking in arbitrary orders, while mechanical exfoliation from bulk crystals is also challenging due to the non-negligible interlayer coupling therein. Here we liberate millimeter-scale films of topological insulator Bi$_2$Se$_3$, grown by mol…
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Ultrathin topological insulator membranes are building blocks of exotic quantum matter. However, traditional epitaxy of these materials does not facilitate stacking in arbitrary orders, while mechanical exfoliation from bulk crystals is also challenging due to the non-negligible interlayer coupling therein. Here we liberate millimeter-scale films of topological insulator Bi$_2$Se$_3$, grown by molecular beam epitaxy, down to 3 quintuple layers. We characterize the preservation of the topological surface states and quantum well states in transferred Bi$_{2}$Se$_{3}$ films using angle-resolved photoemission spectroscopy. Leveraging the photon-energy-dependent surface sensitivity, the photoemission spectra taken with $6$ eV and $21.2$ eV photons reveal a transfer-induced migration of the topological surface states from the top to the inner layers. By establishing clear electronic structures of the transferred films and unveiling the wavefunction relocation of the topological surface states, our work paves the physics foundation crucial for the future fabrication of artificially stacked topological materials with single-layer precision.
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Submitted 21 May, 2024;
originally announced May 2024.
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Engineering Miniband Topology via Band-Folding in Moiré Superlattice Materials
Authors:
Kaijie Yang,
Yunzhe Liu,
Frank Schindler,
Chao-Xing Liu
Abstract:
The emergence of topologically non-trivial flat bands in moiré materials provides an opportunity to explore the interplay between topological physics and correlation effects, leading to the recent experimental realization of interacting topological phases, e.g. fractional Chern insulators. In this work, we propose a mechanism of band inversion induced by band-folding from the moiré superlattice po…
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The emergence of topologically non-trivial flat bands in moiré materials provides an opportunity to explore the interplay between topological physics and correlation effects, leading to the recent experimental realization of interacting topological phases, e.g. fractional Chern insulators. In this work, we propose a mechanism of band inversion induced by band-folding from the moiré superlattice potential for engineering topological minibands in moiré materials. We illustrate this mechanism via two classes of model Hamiltonians, namely the Rashba model and the Bernevig-Hughes-Zhang (BHZ) model, under the moiré superlattice potentials. Moiré minibands with non-trivial band topology, including Z2 number, mirror Chern number and fragile topology, have been found and the topological phase diagram is constructed for these moiré models. A general theory based on band representations in the morié Brillouin zone is also developed for a generalization of this mechanism to other space groups. Possible experimental realizations of our model Hamiltonian are discussed.
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Submitted 21 May, 2024;
originally announced May 2024.
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Phase-field analysis for brittle fracture in ferroelectric materials with flexoelectric effect
Authors:
Chang Liu,
Yu Tan,
Yong Zhang,
Zhaoyi Liu,
Takahiro Shimada,
Xiangyu Li,
Jie Wang
Abstract:
Understanding the nature of brittle failure in ferroelectric materials is essential, but difficult due to the complex interaction between mechanical and electrical concentrated fields near the crack tip. In this work, an extended phase-field model incorporating multiple order parameters is constructed to analyze the coupled evolution of fracture and domain behavior in ferroelectric materials. The…
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Understanding the nature of brittle failure in ferroelectric materials is essential, but difficult due to the complex interaction between mechanical and electrical concentrated fields near the crack tip. In this work, an extended phase-field model incorporating multiple order parameters is constructed to analyze the coupled evolution of fracture and domain behavior in ferroelectric materials. The strain gradient is incorporated into the governing equations to evaluate the impact of the flexoelectric effect during the crack propagation process. Our advanced phase-field model demonstrated that, with the consideration of the flexoelectric effect, both the crack extension rate and crack path are related to the initial polarization direction. This phenomenon is associated with the eigenstrain induced by the flexoelectric effect. This study provides in-depth insight into the fracture behavior of ferroelectric materials. The developed model framework can also be employed to investigate electromechanical coupling failures in more complex ferroelectric structures.
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Submitted 21 May, 2024;
originally announced May 2024.
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Observation of Spin Splitting in Room-Temperature Metallic Antiferromagnet CrSb
Authors:
Meng Zeng,
Ming-Yuan Zhu,
Yu-Peng Zhu,
Xiang-Rui Liu,
Xiao-Ming Ma,
Yu-Jie Hao,
Pengfei Liu,
Gexing Qu,
Yichen Yang,
Zhicheng Jiang,
Kohei Yamagami,
Masashi Arita,
Xiaoqian Zhang,
Tian-Hao Shao,
Yue Dai,
Kenya Shimada,
Zhengtai Liu,
Mao Ye,
Yaobo Huang,
Qihang Liu,
Chang Liu
Abstract:
Recently, unconventional antiferromagnets that enable the splitting of electronic spins have been theoretically proposed and experimentally realized, where the magnetic sublattices containing moments pointing at different directions are connected by a novel set of symmetries. Such spin splitting (SS) is substantial, $k$-dependent, and independent of the spin-orbit coupling strength, making these m…
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Recently, unconventional antiferromagnets that enable the splitting of electronic spins have been theoretically proposed and experimentally realized, where the magnetic sublattices containing moments pointing at different directions are connected by a novel set of symmetries. Such spin splitting (SS) is substantial, $k$-dependent, and independent of the spin-orbit coupling strength, making these magnets promising materials for antiferromagnetic spintronics. Here, combined with angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we perform a systematic study on CrSb, a metallic spin-split antiferromagnet candidate with $T_N$ = 703 K. Our data reveals the electronic structure of CrSb along both out-of-plane and in-plane momentum directions, which renders anisotropic $k$-dependent SS and agrees well with the calculational results. The magnitude of such SS reaches up to at least 0.8 eV at non-high-symmetry momentum points, which is significantly higher than the largest known SOC-induced SS. This compound expands the choice of materials in the field of antiferromagnetic spintronics and is likely to stimulate subsequent investigations of high-efficiency spintronic devices that are functional at room temperature.
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Submitted 21 May, 2024;
originally announced May 2024.
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Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops
Authors:
Zichen Lian,
Yongchao Wang,
Yongqian Wang,
Yang Feng,
Zehao Dong,
Shuai Yang,
Liangcai Xu,
Yaoxin Li,
Bohan Fu,
Yuetan Li,
Wanjun Jiang,
Chang Liu,
**song Zhang,
Yayu Wang
Abstract:
The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. T…
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The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. The rich and complex spin dynamics associated with the van der Waals antiferromagnetic order is expected to generate novel topological phases and phase transitions that are unique to MnBi2Te4. Here we fabricate a device of 7-septuple-layer MnBi2Te4 covered with AlOx cap** layer, which enables the investigation of antiferromagnetic quantum anomalous Hall effect over wide parameter spaces. By tuning the gate voltage and perpendicular magnetic field, we uncover a cascade of quantum phase transitions that can be attributed to the influence of spin configurations on charge transport. Furthermore, we find that an in-plane magnetic field enhances both the coercive field and exchange gap of the surface state, in sharp contrast to that in ferromagnetic quantum anomalous Hall state. We propose that these peculiar features arise from the spin flip and flop transitions inherent to van der Waals antiferromagnet. The versatile tunability of the quantum anomalous Hall effect in MnBi2Te4 paves the way for potential applications in topological antiferromagnetic spintronics.
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Submitted 14 May, 2024;
originally announced May 2024.
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Towards the Quantized Anomalous Hall effect in AlO$_x$-capped MnBi$_2$Te$_4$
Authors:
Yongqian Wang,
Bohan Fu,
Yongchao Wang,
Zicheng Lian,
Shuai Yang,
Yaoxin Li,
Liangcai Xu,
Zhiting Gao,
Wanjun Jiang,
**song Zhang,
Yayu Wang,
Chang Liu
Abstract:
The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi$_2$Te$_4$ has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect…
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The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi$_2$Te$_4$ has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as realizing quantized transport at zero magnetic fields depends critically on fabricating high-quality device. In this article, we address the detrimental influences of fabrication on MnBi$_2$Te$_4$ by simply depositing an AlO$_x$ thin layer on the surface prior to fabrications. Optical contrast and magnetotransport measurements on over 50 samples demonstrate that AlO$_x$ can effectively preserve the pristine state of the samples and significantly enhance the anomalous Hall effect towards quantization. Scaling analysis reveals the Berry curvature dominated mechanism of the anomalous Hall effect at various magnetic configurations. By adjusting the gate voltage, we uncover a gate independent antiferromagnetism in MnBi$_2$Te$_4$. Our experiment not only pave the way for fabricating high-quality transport devices but also advance the exploration of exotic quantum physics in 2D materials.
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Submitted 19 May, 2024; v1 submitted 14 May, 2024;
originally announced May 2024.
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Experimental identification of topological defects in 2D colloidal glass
Authors:
Vinay Vaibhav,
Arabinda Bera,
Amelia C. Y. Liu,
Matteo Baggioli,
Peter Keim,
Alessio Zaccone
Abstract:
Topological defects are singularities in the order parameter space that are mathematically described by topological invariants and cannot be removed by continuous transformations. These defects play a significant role in various fields, ranging from cosmology to solid-state physics and biological matter. The definition of these irregularities requires an ordered reference configuration, leading to…
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Topological defects are singularities in the order parameter space that are mathematically described by topological invariants and cannot be removed by continuous transformations. These defects play a significant role in various fields, ranging from cosmology to solid-state physics and biological matter. The definition of these irregularities requires an ordered reference configuration, leading to decades of debate about the existence of topological defects in disordered systems, such as glasses. Recently, it has been proposed that well-defined topological defects might emerge in the dynamical properties of glasses under deformation, potentially relating to their plastic behavior. In this study, we investigate a two-dimensional colloidal glass system composed of particles interacting by an effective magnetic repulsion. We reveal the presence of topological defects in the eigenspace of the vibrational frequencies of this experimental 2D amorphous solid. The vibrational density of states of this 2D amorphous material exhibits distinct glassy properties such as the presence of a boson peak anomaly. Through extensive numerical and theoretical quantitative analysis, we establish a robust positive correlation between the vibrational characteristics and the total number of topological defects. We furthermore show that defects of opposite charge tend to pair together and prove their local statistical correlation with the "soft spots", the regions more prone to plastic flow. This work provides the experimental confirmation for the existence of topological defects in disordered systems revealing a complex interplay between topology, disorder, and vibrational behavior.
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Submitted 10 May, 2024;
originally announced May 2024.
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Deep thermalization in continuous-variable quantum systems
Authors:
Chang Liu,
Qi Camm Huang,
Wen Wei Ho
Abstract:
We uncover emergent universality arising in the equilibration dynamics of multimode continuous-variable systems. Specifically, we study the ensemble of pure states supported on a small subsystem of a few modes, generated by Gaussian measurements on the remaining modes of a globally pure bosonic Gaussian state. We find that beginning from sufficiently complex global states, such as random Gaussian…
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We uncover emergent universality arising in the equilibration dynamics of multimode continuous-variable systems. Specifically, we study the ensemble of pure states supported on a small subsystem of a few modes, generated by Gaussian measurements on the remaining modes of a globally pure bosonic Gaussian state. We find that beginning from sufficiently complex global states, such as random Gaussian states and product squeezed states coupled via a deep array of linear optical elements, the induced ensemble attains a universal form, independent of the choice of measurement basis: it is composed of unsqueezed coherent states whose displacements are distributed normally and isotropically, with variance depending on only the particle-number density of the system. We further show that the emergence of such a universal form is consistent with a generalized maximum entropy principle, which endows the limiting ensemble, which we call the "Gaussian Scrooge distribution", with a special quantum information-theoretic property of having minimal accessible information. Our results represent a conceptual generalization of the recently introduced notion of "deep thermalization" in discrete-variable quantum many-body systems -- a novel form of equilibration going beyond thermalization of local observables -- to the realm of continuous-variable quantum systems. Moreover, it demonstrates how quantum information-theoretic perspectives can unveil new physical phenomena and principles in quantum dynamics and statistical mechanics.
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Submitted 8 May, 2024;
originally announced May 2024.
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MatterSim: A Deep Learning Atomistic Model Across Elements, Temperatures and Pressures
Authors:
Han Yang,
Chenxi Hu,
Yichi Zhou,
Xixian Liu,
Yu Shi,
Jielan Li,
Guanzhi Li,
Zekun Chen,
Shuizhou Chen,
Claudio Zeni,
Matthew Horton,
Robert Pinsler,
Andrew Fowler,
Daniel Zügner,
Tian Xie,
Jake Smith,
Lixin Sun,
Qian Wang,
Lingyu Kong,
Chang Liu,
Hongxia Hao,
Ziheng Lu
Abstract:
Accurate and fast prediction of materials properties is central to the digital transformation of materials design. However, the vast design space and diverse operating conditions pose significant challenges for accurately modeling arbitrary material candidates and forecasting their properties. We present MatterSim, a deep learning model actively learned from large-scale first-principles computatio…
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Accurate and fast prediction of materials properties is central to the digital transformation of materials design. However, the vast design space and diverse operating conditions pose significant challenges for accurately modeling arbitrary material candidates and forecasting their properties. We present MatterSim, a deep learning model actively learned from large-scale first-principles computations, for efficient atomistic simulations at first-principles level and accurate prediction of broad material properties across the periodic table, spanning temperatures from 0 to 5000 K and pressures up to 1000 GPa. Out-of-the-box, the model serves as a machine learning force field, and shows remarkable capabilities not only in predicting ground-state material structures and energetics, but also in simulating their behavior under realistic temperatures and pressures, signifying an up to ten-fold enhancement in precision compared to the prior best-in-class. This enables MatterSim to compute materials' lattice dynamics, mechanical and thermodynamic properties, and beyond, to an accuracy comparable with first-principles methods. Specifically, MatterSim predicts Gibbs free energies for a wide range of inorganic solids with near-first-principles accuracy and achieves a 15 meV/atom resolution for temperatures up to 1000K compared with experiments. This opens an opportunity to predict experimental phase diagrams of materials at minimal computational cost. Moreover, MatterSim also serves as a platform for continuous learning and customization by integrating domain-specific data. The model can be fine-tuned for atomistic simulations at a desired level of theory or for direct structure-to-property predictions, achieving high data efficiency with a reduction in data requirements by up to 97%.
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Submitted 10 May, 2024; v1 submitted 8 May, 2024;
originally announced May 2024.
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Cross-Platform Autonomous Control of Minimal Kitaev Chains
Authors:
David van Driel,
Rouven Koch,
Vincent P. M. Sietses,
Sebastiaan L. D. ten Haaf,
Chun-Xiao Liu,
Francesco Zatelli,
Bart Roovers,
Alberto Bordin,
Nick van Loo,
Guanzhong Wang,
Jan Cornelis Wolff,
Grzegorz P. Mazur,
Tom Dvir,
Ivan Kulesh,
Qingzhen Wang,
A. Mert Bozkurt,
Sasa Gazibegovic,
Ghada Badawy,
Erik P. A. M. Bakkers,
Michael Wimmer,
Srijit Goswami,
Jose L. Lado,
Leo P. Kouwenhoven,
Eliska Greplova
Abstract:
Contemporary quantum devices are reaching new limits in size and complexity, allowing for the experimental exploration of emergent quantum modes. However, this increased complexity introduces significant challenges in device tuning and control. Here, we demonstrate autonomous tuning of emergent Majorana zero modes in a minimal realization of a Kitaev chain. We achieve this task using cross-platfor…
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Contemporary quantum devices are reaching new limits in size and complexity, allowing for the experimental exploration of emergent quantum modes. However, this increased complexity introduces significant challenges in device tuning and control. Here, we demonstrate autonomous tuning of emergent Majorana zero modes in a minimal realization of a Kitaev chain. We achieve this task using cross-platform transfer learning. First, we train a tuning model on a theory model. Next, we retrain it using a Kitaev chain realization in a two-dimensional electron gas. Finally, we apply this model to tune a Kitaev chain realized in quantum dots coupled through a semiconductor-superconductor section in a one-dimensional nanowire. Utilizing a convolutional neural network, we predict the tunneling and Cooper pair splitting rates from differential conductance measurements, employing these predictions to adjust the electrochemical potential to a Majorana sweet spot. The algorithm successfully converges to the immediate vicinity of a sweet spot (within 1.5 mV in 67.6% of attempts and within 4.5 mV in 80.9% of cases), typically finding a sweet spot in 45 minutes or less. This advancement is a step** stone towards autonomous tuning of emergent modes in interacting systems, and towards foundational tuning machine learning models that can be deployed across a range of experimental platforms.
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Submitted 7 May, 2024;
originally announced May 2024.
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Memristive switching in the surface of a charge-density-wave topological semimetal
Authors:
Jianwen Ma,
Xianghao Meng,
Binhua Zhang,
Yuxiang Wang,
Yicheng Mou,
Wenting Lin,
Yannan Dai,
Luqiu Chen,
Haonan Wang,
Haoqi Wu,
Jiaming Gu,
Jiayu Wang,
Yuhan Du,
Chunsen Liu,
Wu Shi,
Zhenzhong Yang,
Bobo Tian,
Lin Miao,
Peng Zhou,
Chun-Gang Duan,
Changsong Xu,
Xiang Yuan,
Cheng Zhang
Abstract:
Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological…
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Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological electronic research. However, ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers. In this study, we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal (TaSe4)2I. We find that the surface state of (TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction. With the combination of ferroelectric surface and charge-density-wave-gapped bulk states, an electric switchable barrier height can be achieved in (TaSe4)2I-metal contact. By employing a multi-terminal grounding design, we manage to construct a prototype ferroelectric memristor based on (TaSe4)2I with on/off ratio up to 10^3, endurance over 10^3 cycles, and good retention characteristics. The origin of the ferroelectric surface state is further investigated by first-principles calculations, which reveals an interplay between ferroelectricity and band topology. The emergence of ferroelectricity in (TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials, but also opens new routes towards the implementation of topological materials in functional electronic devices.
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Submitted 6 May, 2024;
originally announced May 2024.
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Twisted Magnetic Van der Waals Bilayers: An Ideal Platform for Altermagnetism
Authors:
Yichen Liu,
Junxi Yu,
Cheng-Cheng Liu
Abstract:
We introduce a universal methodology for generating and manipulating altermagnetism in two-dimensional (2D) magnetic van der Waals (MvdW) materials through twisting. We find that a key in-plane 2-fold rotational operation can be achieved in a twisted bilayer of any 2D MvdW material, which takes one of all five 2D Bravais lattices, thereby inducing altermagnetism. By choosing the constituent MvdW m…
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We introduce a universal methodology for generating and manipulating altermagnetism in two-dimensional (2D) magnetic van der Waals (MvdW) materials through twisting. We find that a key in-plane 2-fold rotational operation can be achieved in a twisted bilayer of any 2D MvdW material, which takes one of all five 2D Bravais lattices, thereby inducing altermagnetism. By choosing the constituent MvdW monolayer with specific symmetry, our approach can tailor altermagnetism of any type, such as $d$-wave, $g$-wave, and $i$-wave. Furthermore, the properties of our twisted altermagnetic materials can be easily engineered. Taking a transition-metal oxyhalide VOBr as an example, we find that by tuning the twist angle and Fermi level a giant spin Hall angle can be obtained, much larger than the experimentally reported. This approach establishes a general, robust, and adjustable platform to explore altermagnetism, and provides a new efficient way to generate and manipulate the spin current.
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Submitted 26 April, 2024;
originally announced April 2024.
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Creation and Manipulation of Higher-Order Topological States by Altermagnets
Authors:
Yu-Xuan Li,
Yichen Liu,
Cheng-Cheng Liu
Abstract:
We propose to implement tunable higher-order topological states in a heterojunction consisting of a two-dimensional (2D) topological insulator and the recently discovered altermagnets, whose unique spin-polarization in both real and reciprocal space and null magnetization are in contrast to conventional ferromagnets and antiferromagnets. Based on symmetry analysis and effective edge theory, we sho…
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We propose to implement tunable higher-order topological states in a heterojunction consisting of a two-dimensional (2D) topological insulator and the recently discovered altermagnets, whose unique spin-polarization in both real and reciprocal space and null magnetization are in contrast to conventional ferromagnets and antiferromagnets. Based on symmetry analysis and effective edge theory, we show that the special spin splitting in altermagnets with different symmetries, such as $d$-wave, can introduce Dirac mass terms with opposite signs on the adjacent boundaries of the topological insulator, resulting in the higher-order topological state with mass-domain bound corner states. Moreover, by adjusting the direction of the Néel vector, we can manipulate such topological corner states by moving their positions. By first-principles calculations, taking a 2D topological insulator bismuthene with a square lattice on an altermagnet MnF$_2$ as an example, we demonstrate the feasibility of creating and manipulating the higher-order topological states through altermagnets. Finally, we discuss the experimental implementation and detection of the tunable topological corner states, as well as the potential non-Abelian braiding of the Dirac corner fermions.
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Submitted 9 May, 2024; v1 submitted 22 April, 2024;
originally announced April 2024.
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Topological Heavy Fermion Principle For Flat (Narrow) Bands With Concentrated Quantum Geometry
Authors:
Jonah Herzog-Arbeitman,
Jiabin Yu,
Dumitru Călugăru,
Haoyu Hu,
Nicolas Regnault,
Chaoxing Liu,
Sankar Das Sarma,
Oskar Vafek,
Piers Coleman,
Alexei Tsvelik,
Zhi-da Song,
B. Andrei Bernevig
Abstract:
We propose a general principle for the low-energy theory of narrow bands with concentrated Berry curvature and Fubini-Study metric in the form of a map to Anderson-"+" models composed of heavy fermions hybridizing and interacting with semi-metallic modes. This map resolves the obstruction preventing topological bands from being realized in a local Hamiltonian acting on the low-energy degrees of fr…
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We propose a general principle for the low-energy theory of narrow bands with concentrated Berry curvature and Fubini-Study metric in the form of a map to Anderson-"+" models composed of heavy fermions hybridizing and interacting with semi-metallic modes. This map resolves the obstruction preventing topological bands from being realized in a local Hamiltonian acting on the low-energy degrees of freedom. The concentrated quantum geometry is reproduced through band inversion with a dispersive semi-metal, leaving a nearly flat, trivial band which becomes the heavy fermion. This representation is natural when the narrow band is not energetically isolated on the scale of the interaction and an enlarged Hilbert space is inescapable, but also provides analytical insight into the projected-interaction limit. First exemplified in twisted bilayer graphene (TBG), we extend it to (1) the twisted checkerboard, which we find has a chiral symmetric stable anomaly that forbids a lattice realization at all energies, and (2) the Lieb lattice with gapless flat bands, where we show the heavy fermions can be obtained by minimizing a Euclidean instanton action to saturate its BPS bound. The heavy fermion approach is widely applicable and physically transparent: heavy electrons carry the strong correlations and dispersive electrons carry the topology. This simple picture unifies the dichotomous phenomena observed in TBG and points to connections between moiré and stoichiometric materials.
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Submitted 10 April, 2024;
originally announced April 2024.
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Candidate quantum spin liquids on the maple-leaf lattice
Authors:
Jonas Sonnenschein,
Atanu Maity,
Chunxiao Liu,
Ronny Thomale,
Francesco Ferrari,
Yasir Iqbal
Abstract:
Motivated by recent numerical studies reporting putative quantum paramagnetic behavior in spin-$1/2$ Heisenberg models on the maple-leaf lattice, we classify Abrikosov fermion mean-field Ansätze of fully symmetric $U(1)$ and $\mathbb{Z}_{2}$ quantum spin liquids within the framework of projective symmetry groups. We obtain a total of $17$ $U(1)$ and $12$ $\mathbb{Z}_{2}$ algebraic PSGs, and, upon…
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Motivated by recent numerical studies reporting putative quantum paramagnetic behavior in spin-$1/2$ Heisenberg models on the maple-leaf lattice, we classify Abrikosov fermion mean-field Ansätze of fully symmetric $U(1)$ and $\mathbb{Z}_{2}$ quantum spin liquids within the framework of projective symmetry groups. We obtain a total of $17$ $U(1)$ and $12$ $\mathbb{Z}_{2}$ algebraic PSGs, and, upon restricting their realization via mean-field Ansätze with nearest-neighbor amplitudes (relevant to the studied models), only 12 $U(1)$ and 8 $\mathbb{Z}_{2}$ distinct phases are obtained. We present both singlet and triplet fields for all Ansätze up to third nearest-neighbor bonds and discuss their spinon dispersions as well as their dynamical spin structure factors. We further assess the effects of Gutzwiller projection on the equal-time spin structure factors, and identify a $U(1)$ Fermi surface spin liquid whose structure factor most closely reproduces the one obtained from pseudo-fermion functional renormalization group calculations.
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Submitted 8 April, 2024;
originally announced April 2024.
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Scaling of quantum Fisher information for quantum exceptional point sensors
Authors:
Chun-Hui Liu,
Fu Li,
Shengwang Du,
Jianming Wen,
Lan Yang,
Chuanwei Zhang
Abstract:
In recent years, significant progress has been made in utilizing the divergence of spectrum response rate at the exceptional point (EP) for sensing in classical systems, while the use and characterization of quantum EPs for sensing have been largely unexplored. For a quantum EP sensor, an important issue is the relation between the order of the quantum EP and the scaling of quantum Fisher informat…
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In recent years, significant progress has been made in utilizing the divergence of spectrum response rate at the exceptional point (EP) for sensing in classical systems, while the use and characterization of quantum EPs for sensing have been largely unexplored. For a quantum EP sensor, an important issue is the relation between the order of the quantum EP and the scaling of quantum Fisher information (QFI), an essential quantity for characterizing quantum sensors. Here we investigate multi-mode quadratic bosonic systems, which exhibit higher-order EP dynamics, but possess Hermitian Hamiltonians without Langevin noise, thus can be utilized for quantum sensing. We derive an exact analytic formula for the QFI, from which we establish a scaling relation between the QFI and the order of the EP. We apply the formula to study a three-mode EP sensor and a multi-mode bosonic Kitaev chain and show that the EP physics can significantly enhance the sensing sensitivity. Our work establishes the connection between two important fields: non-Hermitian EP dynamics and quantum sensing, and may find important applications in quantum information and quantum non-Hermitian physics.
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Submitted 4 April, 2024;
originally announced April 2024.
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Observation of Kosterlitz-Thouless Metal-to-Insulator Transition in Quantum Anomalous Hall Insulators
Authors:
Ruoxi Zhang,
Yi-Fan Zhao,
Ling-Jie Zhou,
Deyi Zhuo,
Zi-Jie Yan,
Chao-Xing Liu,
Moses H. W. Chan,
Chui-Zhen Chen,
Cui-Zu Chang
Abstract:
Interlayer exchange coupling (IEC) between two magnetic layers sandwiched by a nonmagnetic spacer layer plays a critical role in sha** the magnetic properties of such heterostructures. The quantum anomalous Hall (QAH) effect has been realized in a structure composed of two magnetically doped topological insulator (TI) layers separated by an undoped TI layer. The quantized Hall conductance observ…
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Interlayer exchange coupling (IEC) between two magnetic layers sandwiched by a nonmagnetic spacer layer plays a critical role in sha** the magnetic properties of such heterostructures. The quantum anomalous Hall (QAH) effect has been realized in a structure composed of two magnetically doped topological insulator (TI) layers separated by an undoped TI layer. The quantized Hall conductance observed in this sandwich heterostructure originates from the combined contribution of the top and bottom surface states. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI sandwiches with varying thicknesses of the middle undoped TI layer. The well-quantized QAH effect is observed in all these samples and its critical behavior is modulated by the IEC between the top and bottom magnetic TI layers. Near the plateau phase transition (PPT), we find that thinner QAH samples exhibit a two-dimensional critical metal behavior with nearly temperature-independent longitudinal resistance, whereas thicker QAH samples behave as a three-dimensional insulator with reduced longitudinal resistance at higher temperatures. The IEC-induced critical-metal-to-insulator transition in the QAH PPT regime can be understood through a two-channel Chalker-Coddington network model by tuning inter-channel tunneling. The agreement between experiment and theory strongly supports the QAH PPT within the Kosterlitz-Thouless framework, where the critical metal and disordered insulator phases exist in bound and unbound states of vortex-antivortex pairs, respectively.
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Submitted 2 April, 2024;
originally announced April 2024.
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Precise Control of Process Parameters for >23% Efficiency Perovskite Solar Cells in Ambient Air Using an Automated Device Acceleration Platform
Authors:
Jiyun Zhang,
Anastasia Barabash,
Tian Du,
Jianchang Wu,
Vincent M. Le Corre,
Yicheng Zhao,
Shudi Qiu,
Kaicheng Zhang,
Frederik Schmitt,
Zijian Peng,
**g**g Tian,
Chaohui Li,
Chao Liu,
Thomas Heumueller,
Larry Lüer,
Jens A. Hauch,
Christoph J. Brabec
Abstract:
Achieving high-performance perovskite photovoltaics, especially in ambient air relies heavily on optimizing process parameters. However, traditional manual methods often struggle to effectively control the key variables. This inherent challenge requires a paradigm shift toward automated platforms capable of precise and reproducible experiments. Herein, we use a fully automated device acceleration…
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Achieving high-performance perovskite photovoltaics, especially in ambient air relies heavily on optimizing process parameters. However, traditional manual methods often struggle to effectively control the key variables. This inherent challenge requires a paradigm shift toward automated platforms capable of precise and reproducible experiments. Herein, we use a fully automated device acceleration platform (DAP) to optimize the process parameters for preparing full perovskite devices using a two-step method in ambient air. Eight process parameters that have the potential to significantly influence device performance are systematically optimized. Specifically, we delve into the impact of the dispense speed of organic ammonium halide, a parameter that is difficult to control manually, on both perovskite film and device performance. Through the targeted design of experiments, we reveal that the dispense speed significantly affects device performance primarily by adjusting the residual PbI2 content in the films. We find that moderate dispense speeds, e.g., 50 μl/s, contribute to top-performance devices. Conversely, too fast or too slow speeds result in devices with relatively poorer performance and lower reproducibility. The optimized parameter set enables us to establish a Standard Operation Procedure (SOP) for additive-free perovskite processing under ambient conditions, which yield devices with efficiencies surpassing 23%, satisfactory reproducibility, and state-of-the-art photo-thermal stability. This research underscores the importance of understanding the causality of process parameters in enhancing perovskite photovoltaic performance. Furthermore, our study highlights the pivotal role of automated platforms in discovering innovative workflows and accelerating the development of high-performing perovskite photovoltaic technologies.
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Submitted 29 March, 2024;
originally announced April 2024.
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Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure
Authors:
Saurav Islam,
Emma Steinebronn,
Kaijie Yang,
Bimal Neupane,
Juan Chamorro,
Supriya Ghosh,
K. Andre Mkhoyan,
Tyrel M. McQueen,
Yuanxi Wang,
Chaoxing Liu,
Nitin Samarth
Abstract:
We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer due to the Rashba spin-orbit coupling from…
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We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer due to the Rashba spin-orbit coupling from broken inversion symmetry. This implies the presence of a Dzyaloshinskii-Moriya interaction between local moments in the In$_{1-x}$Mn$_x$As layer, mediated by Dirac electrons in the vicinal Cd$_3$As$_2$ layer, potentially creating the conditions for a real space chiral spin texture. Using electrical magnetoresistance measurements at low temperature, we observe an emergent excess contribution to the transverse magneto-resistance whose behavior is consistent with a topological Hall effect arising from the formation of an interfacial chiral spin texture. This excess Hall voltage varies with gate voltage, indicating a promising electrostatically-tunable platform for understanding the interplay between the helical momentum space states of a Dirac semimetal and chiral real space spin textures in a ferromagnet.
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Submitted 27 March, 2024;
originally announced March 2024.
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Nanoscale Imaging of Phonons and Reconfiguration in Topologically-Engineered, Self-Assembled Nanoparticle Lattice
Authors:
Chang Qian,
Ethan Stanifer,
Zhan Ma,
Binbin Luo,
Chang Liu,
Lehan Yao,
Wenxiao Pan,
Xiaoming Mao,
Qian Chen
Abstract:
Topologically-engineered mechanical frames are important model constructs for architecture, machine mechanisms, and metamaterials. Despite significant advances in macroscopically fashioned frames, realization and phonon imaging of nanoframes have remained challenging. Here we extend for the first time the principles of topologically-engineered mechanical frames to lattices self-assembled from nano…
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Topologically-engineered mechanical frames are important model constructs for architecture, machine mechanisms, and metamaterials. Despite significant advances in macroscopically fashioned frames, realization and phonon imaging of nanoframes have remained challenging. Here we extend for the first time the principles of topologically-engineered mechanical frames to lattices self-assembled from nanoparticles. Liquid-phase transmission electron microscopy images the vibrations of nanoparticles in self-assembled Maxwell and hexagonal lattices at the nanometer resolution, measuring a series of otherwise inaccessible properties such as phonon spectra and nonlinear lattice deformation paths. These properties are experimentally modulated by ionic strength, captured by our discrete mechanical model considering the complexity of nanoscale interactions and thermal fluctuations. The experiment-theory integration bridges mechanical metamaterials and colloidal self-assembly, opening new opportunities to manufacture phononic devices with solution processibility, transformability, light weight, and emergent functions, at underexplored length, frequency, and energy scales.
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Submitted 22 March, 2024;
originally announced March 2024.
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Probing the Fermi surface with Quantum Oscillation Measurements in the Dirac semimetal TaNiTe$_5$
Authors:
Maximilian Daschner,
Friedrich Malte Grosche,
Cheng Liu,
Bruno Gudac,
Mario Novak,
Ivan Kokanović
Abstract:
We report a detailed investigation of the Fermi surface in the layered Dirac semimetal TaNiTe$_5$, which hosts quasi-one-dimensional (quasi-1D) topological electronic properties. We have investigated the magnetoresistance and magnetic behaviour in high-quality TaNiTe$_5$ single crystals. Pronounced Shubnikov-de Haas (SdH) and de Haas-van Alphen (dHvA) oscillations are observed in magnetic fields a…
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We report a detailed investigation of the Fermi surface in the layered Dirac semimetal TaNiTe$_5$, which hosts quasi-one-dimensional (quasi-1D) topological electronic properties. We have investigated the magnetoresistance and magnetic behaviour in high-quality TaNiTe$_5$ single crystals. Pronounced Shubnikov-de Haas (SdH) and de Haas-van Alphen (dHvA) oscillations are observed in magnetic fields above 3T and at temperatures of up to 22K. Five fundamental frequencies and light effective quasiparticle masses are obtained by fast Fourier transformation (FFT) and Lifshitz-Kosevich (LK) formula fits. The high resolution of the low-temperature FFT spectra allows us to investigate individual peaks in detail for the magnetic fields applied along all three crystallographic axes and in the a-c plane. The extracted values for the Berry phase of the obtained Fermi pockets approach $π$, demonstrating the nontrivial topological electronic properties of layered TaNiTe$_5$. The observed quantum oscillations in the magnetoresistance and magnetization data are consistent with ultra-high mobility Dirac carriers in the conduction band.
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Submitted 19 March, 2024;
originally announced March 2024.
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Discovery of self-assembled Ru/Si heterostructures with unique periodic nanostripe patterns boosting hydrogen evolution
Authors:
Weizheng Cai,
Xinyi He,
Tian-Nan Ye,
Xinmeng Hu,
Chuanlong Liu,
Masato Sasase,
Masaaki Kitano,
Toshio Kamiya,
Hideo Hosono,
Jiazhen Wu
Abstract:
Two-dimensional (2D) heterostructuring is a versatile methodology for designing nanoarchitecture catalytic systems that allow for reconstruction and modulation of interfaces and electronic structures. However, catalysts with such structures are extremely scarce due to limited synthetic strategies. Here, we report a highly ordered 2D Ru/Si nano-heterostructures (RSHS) by acid etching of the LaRuSi…
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Two-dimensional (2D) heterostructuring is a versatile methodology for designing nanoarchitecture catalytic systems that allow for reconstruction and modulation of interfaces and electronic structures. However, catalysts with such structures are extremely scarce due to limited synthetic strategies. Here, we report a highly ordered 2D Ru/Si nano-heterostructures (RSHS) by acid etching of the LaRuSi electride. RSHS shows a superior electrocatalytic activity for hydrogen evolution with an overpotential of 14 mV at 10 mA/cm2 in alkaline media. Both experimental analysis and first-principles calculations demonstrate that the electronic states of Ru can be tuned by strong interactions of the interfacial Ru-Si, leading to an optimized hydrogen adsorption energy. Moreover, due to the synergistic effect of Ru and Si, the energy barrier of water dissociation is significantly reduced. The unique nanostripe structure with abundant interfaces in RSHS will provide a paradigm for construction of efficient catalysts with tunable electronic states and dual active sites.
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Submitted 18 March, 2024;
originally announced March 2024.
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The Heisenberg-RIXS instrument at the European XFEL
Authors:
Justine Schlappa,
Giacomo Ghiringhelli,
Benjamin E. Van Kuiken,
Martin Teichmann,
Piter S. Miedema,
Jan Torben Delitz,
Natalia Gerasimova,
Serguei Molodtsov,
Luigi Adriano,
Bernard Baranasic,
Carsten Broers,
Robert Carley,
Patrick Gessler,
Nahid Ghodrati,
David Hickin,
Le Phuong Hoang,
Manuel Izquierdo,
Laurent Mercadier,
Giuseppe Mercurio,
Sergii Parchenko,
Marijan Stupar,
Zhong Yin,
Leonardo Martinelli,
Giacomo Merzoni,
Ying Ying Peng
, et al. (22 additional authors not shown)
Abstract:
Resonant Inelastic X-ray Scattering (RIXS) is an ideal X-ray spectroscopy method to push the combination of energy and time resolutions to the Fourier transform ultimate limit, because it is unaffected by the core-hole lifetime energy broadening. And in pump-probe experiments the interaction time is made very short by the same core-hole lifetime. RIXS is very photon hungry so it takes great advant…
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Resonant Inelastic X-ray Scattering (RIXS) is an ideal X-ray spectroscopy method to push the combination of energy and time resolutions to the Fourier transform ultimate limit, because it is unaffected by the core-hole lifetime energy broadening. And in pump-probe experiments the interaction time is made very short by the same core-hole lifetime. RIXS is very photon hungry so it takes great advantage from high repetition rate pulsed X-ray sources like the European XFEL. The hRIXS instrument is designed for RIXS experiments in the soft X-ray range with energy resolution approaching the Fourier and the Heisenberg limits. It is based on a spherical grating with variable line spacing (VLS) and a position-sensitive 2D detector. Initially, two gratings are installed to adequately cover the whole photon energy range. With optimized spot size on the sample and small pixel detector the energy resolution can be better than 40 meV at any photon energy below 1000 eV. At the SCS instrument of the European XFEL the spectrometer can be easily positioned thanks to air-pads on a high-quality floor, allowing the scattering angle to be continuously adjusted over the 65-145 deg range. It can be coupled to two different sample interaction chamber, one for liquid jets and one for solids, each equipped at the state-of-the-art and compatible for optical laser pum** in collinear geometry. The measured performances, in terms of energy resolution and count rate on the detector, closely match design expectations. hRIXS is open to public users since the summer of 2022.
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Submitted 13 March, 2024;
originally announced March 2024.
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Localized interfacial Phonon Modes at the Electronic Axion Domain Wall
Authors:
Abhinava Chatterjee,
Mourad Oudich,
Yun **g,
Chao-Xing Liu
Abstract:
The most salient feature of electronic topological states of matter is the existence of exotic electronic modes localized at the surface or interface of a sample. In this work, in an electronic topological system, we demonstrate the existence of localized phonon modes at the domain wall between topologically trivial and non-trivial regions, in addition to the localized interfacial electronic state…
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The most salient feature of electronic topological states of matter is the existence of exotic electronic modes localized at the surface or interface of a sample. In this work, in an electronic topological system, we demonstrate the existence of localized phonon modes at the domain wall between topologically trivial and non-trivial regions, in addition to the localized interfacial electronic states. In particular, we consider a theoretical model for the Dirac semimetal with a gap opened by external strains and study the phonon dynamics, which couples to electronic degrees of freedom via strong electron-phonon interaction. By treating the phonon modes as a pseudo-gauge field, we find that the axion type of terms for phonon dynamics can emerge in gapped Dirac semimetal model and lead to interfacial phonon modes localized at the domain wall between trivial and non-trivial regimes that possess the axion parameters 0 and π, respectively. We also discuss the physical properties and possible experimental probe of such interfacial phonon modes.
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Submitted 11 March, 2024;
originally announced March 2024.
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Hybrid-order topology with tunable chiral hinge modes and unpinned Dirac surface states in the altermagnetic insulator Eu$_{3}$In$_{2}$As$_{4}$
Authors:
Yufei Zhao,
Hyeonhu Bae,
Yiyang Jiang,
Yongkang Li,
Chao-Xing Liu,
Binghai Yan
Abstract:
The exploration of magnetic topological states is instrumental in exploring axion electrodynamics and intriguing transport phenomena, such as the quantum anomalous Hall effect. Here, we predict that the recently-synthesized material Eu$_{3}$In$_{2}$As$_{4}$ exhibits as both an axion insulator and a 3D Stiefel-Whitney insulator with an altermagnetic order. When spins align in the $ab$ plane, we fin…
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The exploration of magnetic topological states is instrumental in exploring axion electrodynamics and intriguing transport phenomena, such as the quantum anomalous Hall effect. Here, we predict that the recently-synthesized material Eu$_{3}$In$_{2}$As$_{4}$ exhibits as both an axion insulator and a 3D Stiefel-Whitney insulator with an altermagnetic order. When spins align in the $ab$ plane, we find an unpinned surface Dirac cone on the $ab$ plane and chiral hinge states along the $c$ direction, where hinge states can generate a half-quantized surface anomalous Hall effect on the $ac$ and $bc$ facets. When spins align along $c$, we observe a mirror-protected topological crystalline insulator. Furthermore, the ferromagnetic phase, in which spins are aligned in the same direction by an external in-plane magnetic field, presents an ideal Weyl semimetal with a single pair of type-I Weyl points and no extra Fermi pocket. Our work predicts rich topological states tuned by magnetic structures in Eu$_{3}$In$_{2}$As$_{4}$, supporting the further study of the topological transport and Majorana fermions in proximity to a superconductor.
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Submitted 10 March, 2024;
originally announced March 2024.
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Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-do**
Authors:
Chao Zhou,
Liyang Ma,
Yanpeng Feng,
Chang-Yang Kuo,
Yu-Chieh Ku,
Cheng-En Liu,
Xianlong Cheng,
**gxuan Li,
Yangyang Si,
Haoliang Huang,
Yan Huang,
Hongjian Zhao,
Chun-Fu Chang,
Sujit Das,
Shi Liu,
Zuhuang Chen
Abstract:
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also…
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In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-do** to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-do** ensure the enhanced ferroelectricity and shortened switching time. The co-do** strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.
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Submitted 7 March, 2024;
originally announced March 2024.
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Low-temperature aqueous solution growth of the acousto-optic TeO2 single crystals
Authors:
Lu Han,
Chao Liu,
Xiaoli Wang,
Feiyu Li,
Chuanyan Fan,
Junjie Zhang
Abstract:
$α$-TeO2 is widely used in acousto-optic devices due to its excellent physical properties. Conventionally, $α$-TeO2 single crystals were grown using melt methods. Here, we report for the first time the growth of $α$-TeO2 single crystals using the aqueous solution method below 100 °C. Solubility curve of $α$-TeO2 was measured, and then single crystals with dimensions of 3.5x3.5x2.5 mm3 were success…
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$α$-TeO2 is widely used in acousto-optic devices due to its excellent physical properties. Conventionally, $α$-TeO2 single crystals were grown using melt methods. Here, we report for the first time the growth of $α$-TeO2 single crystals using the aqueous solution method below 100 °C. Solubility curve of $α$-TeO2 was measured, and then single crystals with dimensions of 3.5x3.5x2.5 mm3 were successfully grown using seed crystals that were synthesized from spontaneous nucleation. The as-grown single crystals belong to the P41212 space group, evidenced by single crystal X-ray diffraction and Rietveld refinement on powder diffraction. Rocking curve measurements show that the as-grown crystals exhibit high crystallinity with a full-width at half maxima (FWHM) of 57.2''. Ultraviolet-Visible absorption spectroscopy indicates the absorption edge is 350 nm and the band gap is estimated to be 3.58 eV. The density and Vickers hardness of as-grown single crystals are measured to be 6.042 g/cm3 and 404 kg/mm2, repectively. Our findings provide an easy-to-access and energy-saving method for growing single crystals of inorganic compounds.
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Submitted 1 March, 2024;
originally announced March 2024.
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Signatures of Majorana protection in a three-site Kitaev chain
Authors:
Alberto Bordin,
Chun-Xiao Liu,
Tom Dvir,
Francesco Zatelli,
Sebastiaan L. D. ten Haaf,
David van Driel,
Guanzhong Wang,
Nick van Loo,
Thomas van Caekenberghe,
Jan Cornelis Wolff,
Yining Zhang,
Ghada Badawy,
Sasa Gazibegovic,
Erik P. A. M. Bakkers,
Michael Wimmer,
Leo P. Kouwenhoven,
Grzegorz P. Mazur
Abstract:
Majorana zero modes (MZMs) are non-Abelian excitations predicted to emerge at the edges of topological superconductors. One proposal for realizing a topological superconductor in one dimension involves a chain of spinless fermions, coupled through $p$-wave superconducting pairing and electron hop**. This concept is also known as the Kitaev chain. A minimal two-site Kitaev chain has recently been…
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Majorana zero modes (MZMs) are non-Abelian excitations predicted to emerge at the edges of topological superconductors. One proposal for realizing a topological superconductor in one dimension involves a chain of spinless fermions, coupled through $p$-wave superconducting pairing and electron hop**. This concept is also known as the Kitaev chain. A minimal two-site Kitaev chain has recently been experimentally realized using quantum dots (QDs) coupled through a superconductor. In such a minimal chain, MZMs are quadratically protected against global perturbations of the QD electrochemical potentials. However, they are not protected from perturbations of the inter-QD couplings. In this work, we demonstrate that extending the chain to three sites offers greater protection than the two-site configuration. The enhanced protection is evidenced by the stability of the zero-energy modes, which is robust against variations in both the coupling amplitudes and the electrochemical potential variations in the constituent QDs. While our device offers all the desired control of the couplings it does not allow for superconducting phase control. Our experimental observations are in good agreement with numerical simulated conductances with phase averaging. Our work pioneers the development of longer Kitaev chains, a milestone towards topological protection in QD-based chains.
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Submitted 29 February, 2024;
originally announced February 2024.
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Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films
Authors:
Zhiqiang Tian,
Ziming Zhu,
Jiang Zeng,
Chao-Fei Liu,
Yurong Yang,
Anlian Pan,
Mingxing Chen
Abstract:
Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we find that stacking ferroelectric $α$-In$_2$Se$_3$ monolayers into a bilayer leads to polarization-dependent band structures, which yields polarization-dependent topological properties. Specifically, we find that the stat…
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Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we find that stacking ferroelectric $α$-In$_2$Se$_3$ monolayers into a bilayer leads to polarization-dependent band structures, which yields polarization-dependent topological properties. Specifically, we find that the states with interlayer ferroelectric couplings are quantum spin Hall insulators, while those with antiferroelectric polarizations are normal insulators. We further find that In$_2$Se$_3$ trilayer and quadlayer exhibit nontrivial band topology as long as in the structure the ferroelectric In$_2$Se$_3$ bilayer is antiferroelectrically coupled to In$_2$Se$_3$ monolayers or other ferroelectric In$_2$Se$_3$ bilayer. Otherwise the system is topologically trivial. The reason is that near the Fermi level the band structure of the ferroelectric In$_2$Se$_3$ bilayer has to be maintained for the nontrivial band topology. This feature can be used to design nontrivial band topology for the thicker films by a proper combination of the interlayer polarization couplings. The topological properties can be ferroelectrically tunable using the dipole locking effect. Our study reveals switchable band topology in a family of natural ferroelectrics, which provide a platform for designing new functional devices.
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Submitted 28 February, 2024;
originally announced February 2024.
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Room-temperature sub-100 nm Néel-type skyrmions in non-stoichiometric van der Waals ferromagnet $\rm Fe_{3-x}GaTe_{2}$ with ultrafast laser writability
Authors:
Zefang Li,
Huai Zhang,
Guanqi Li,
Jiangteng Guo,
Qing** Wang,
Ying Deng,
Yue Hu,
Xuange Hu,
Can Liu,
Minghui Qin,
Xi Shen,
Richeng Yu,
Xingsen Gao,
Zhimin Liao,
Junming Liu,
Zhipeng Hou,
Yimei Zhu,
Xuewen Fu
Abstract:
Realizing room-temperature magnetic skyrmions in two-dimensional van der Waals ferromagnets offers unparalleled prospects for future spintronic applications. However, due to the intrinsic spin fluctuations that suppress atomic long-range magnetic order and the inherent inversion crystal symmetry that excludes the presence of the Dzyaloshinskii-Moriya interaction, achieving room-temperature skyrmio…
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Realizing room-temperature magnetic skyrmions in two-dimensional van der Waals ferromagnets offers unparalleled prospects for future spintronic applications. However, due to the intrinsic spin fluctuations that suppress atomic long-range magnetic order and the inherent inversion crystal symmetry that excludes the presence of the Dzyaloshinskii-Moriya interaction, achieving room-temperature skyrmions in 2D magnets remains a formidable challenge. In this study, we target room-temperature 2D magnet $\rm Fe_3GaTe_2$ and unveil that the introduction of iron-deficient into this compound enables spatial inversion symmetry breaking, thus inducing a significant Dzyaloshinskii-Moriya interaction that brings about room-temperature Néel-type skyrmions with unprecedentedly small size. To further enhance the practical applications of this finding, we employ a homemade in-situ optical Lorentz transmission electron microscopy to demonstrate ultrafast writing of skyrmions in $\rm Fe_{3-x}GaTe_2$ using a single femtosecond laser pulse. Our results manifest the $\rm Fe_{3-x}GaTe_2$ as a promising building block for realizing skyrmion-based magneto-optical functionalities.
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Submitted 21 February, 2024;
originally announced February 2024.
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Do** induced multiferroicity and quantum anomalous Hall effect in $α$-In$_2$Se$_3$ thin films
Authors:
Zhiqiang Tian,
**-Yang Li,
Tao Ouyang,
Chao-Fei Liu,
Ziran Liu,
Si Li,
Anlian Pan,
Mingxing Chen
Abstract:
In flat-band materials, the strong Coulomb interaction between electrons can lead to exotic physical phenomena. Recently, $α$-In$_2$Se$_3$ thin films were found to possess ferroelectricity and flat bands. In this work, using first-principles calculations, we find that for the monolayer, there is a Weyl point at $Γ$ in the flat band, where the inclusion of the spin-orbit coupling opens a gap. Shift…
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In flat-band materials, the strong Coulomb interaction between electrons can lead to exotic physical phenomena. Recently, $α$-In$_2$Se$_3$ thin films were found to possess ferroelectricity and flat bands. In this work, using first-principles calculations, we find that for the monolayer, there is a Weyl point at $Γ$ in the flat band, where the inclusion of the spin-orbit coupling opens a gap. Shifting the Fermi level into the spin-orbit gap gives rise to nontrivial band topology, which is preserved for the bilayer regardless of the interlayer polarization couplings. We further calculate the Chern number and edge states for both the monolayer and bilayer, for which the results suggest that they become quantum anomalous Hall insulators under appropriate do**s. Moreover, we find that the do**-induced magnetism for In$_2$Se$_3$ bilayer is strongly dependent on the interlayer polarization coupling. Therefore, do** the flat bands in In$_2$Se$_3$ bilayer can also yield multiferroicity, where the magnetism is electrically tunable as the system transforms between different polarization states. Our study thus reveals that multiferroicity and nontrivial band topology can be unified into one material for designing multifunctional electronic devices.
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Submitted 15 February, 2024;
originally announced February 2024.
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Photoinduced Topological Phase Transitions in a Kitaev kagome magnet
Authors:
Zhengguo Tang,
Hongchao Shi,
Heng Zhu,
Bing Tang,
Chaofei Liu
Abstract:
The photoinduced topological phase transitions and thermal Hall conductivity of a kagome magnet with Heisenberg, Kitaev, and DM interactions under an external magnetic field aligned along the [111] directions is investigated in this study. In the presence of a strong magnetic field perpendicular to the lattice plane in the [111] direction, the system exhibits a fully polarized paramagnetic phase a…
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The photoinduced topological phase transitions and thermal Hall conductivity of a kagome magnet with Heisenberg, Kitaev, and DM interactions under an external magnetic field aligned along the [111] directions is investigated in this study. In the presence of a strong magnetic field perpendicular to the lattice plane in the [111] direction, the system exhibits a fully polarized paramagnetic phase and the magnon band carries an asymmetric Chern number across the phase diagram region. Utilizing magnetic Floquet-Bloch theory, we demonstrate that periodically driven intrinsic topological magnetic materials can be manipulated into different topological phases with varying Berry curvature, Chern numbers and thermal Hall conductivities signatures by adjusting light intensity throughout the phase diagram region.
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Submitted 23 April, 2024; v1 submitted 12 February, 2024;
originally announced February 2024.
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Flux-tunable Kitaev chain in a quantum dot array
Authors:
Juan Daniel Torres Luna,
A. Mert Bozkurt,
Michael Wimmer,
Chun-Xiao Liu
Abstract:
Connecting quantum dots through Andreev bound states in a semiconductor-superconductor hybrid provides a platform to create a Kitaev chain. Interestingly, in a double quantum dot, a pair of poor man's Majorana zero modes can emerge when the system is fine-tuned to a sweet spot, where superconducting and normal couplings are equal in magnitude. Control of the Andreev bound states is crucial for ach…
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Connecting quantum dots through Andreev bound states in a semiconductor-superconductor hybrid provides a platform to create a Kitaev chain. Interestingly, in a double quantum dot, a pair of poor man's Majorana zero modes can emerge when the system is fine-tuned to a sweet spot, where superconducting and normal couplings are equal in magnitude. Control of the Andreev bound states is crucial for achieving this, usually implemented by varying its chemical potential. In this work, we propose using Andreev bound states in a narrow Josephson junction to mediate both types of couplings, with the ratio tunable by the phase difference across the junction. Now a minimal Kitaev chain can be easily tuned into the strong coupling regime by varying the phase and junction asymmetry, even without changing the dot-hybrid coupling strength. Furthermore, we identify an optimal sweet spot at $π$ phase, enhancing the excitation gap and robustness against phase fluctuations. Our proposal introduces a new device platform and a new tuning method for realizing quantum-dot-based Kitaev chains.
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Submitted 12 February, 2024;
originally announced February 2024.
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Chemical inhomogeneities in high-entropy alloys help mitigate the strength-ductility trade-off
Authors:
Evan Ma,
Chang Liu
Abstract:
Metallurgists have long been accustomed to a trade-off between yield strength and tensile ductility. Extending previously known strain-hardening mechanisms, the emerging multi-principal-element alloys (MPEAs) offer additional help in promoting the strength-ductility synergy, towards gigapascal yield strength simultaneously with pure-metal-like tensile ductility. The highly concentrated chemical ma…
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Metallurgists have long been accustomed to a trade-off between yield strength and tensile ductility. Extending previously known strain-hardening mechanisms, the emerging multi-principal-element alloys (MPEAs) offer additional help in promoting the strength-ductility synergy, towards gigapascal yield strength simultaneously with pure-metal-like tensile ductility. The highly concentrated chemical make-up in these 'high-entropy' alloys (HEAs) adds, at ultrafine spatial scale from sub-nanometer to tens of nanometers, inherent chemical inhomogeneities in local composition and local chemical order (LCO). These institute a 'nano-cocktail' environment that exerts extra dragging forces, rendering a much wavier motion of dislocation lines (in stick-slip mode) different from dilute solutions. The variable fault energy landscape also makes the dislocation movement sluggish, increasing their chances to hit one another and react to increase entanglement. The accumulation of dislocations (plus faults) dynamically stores obstacles against ensuing dislocation motion to sustain an adequate strain-hardening rate at high flow stresses, delaying plastic instability to enable large (uniform) elongation. The successes summarized advocate MPEAs as an effective recipe towards ultrahigh strength at little expense of tensile ductility. The insight gained also answers the question as to what new mechanical behavior the HEAs have to offer, beyond what has been well documented for traditional metals and solid solutions.
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Submitted 11 February, 2024;
originally announced February 2024.
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Emergence of tension-compression asymmetry from a complete phase-field approach to brittle fracture
Authors:
Chang Liu,
Aditya Kumar
Abstract:
The classical variational approach to brittle fracture propagation does not distinguish between strain energy accumulation in tension versus compression and consequently results in physically unrealistic cracking under compression. A variety of energy splits have been proposed as a possible remedy. However, a unique energy split that can describe this asymmetry for general loading conditions has n…
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The classical variational approach to brittle fracture propagation does not distinguish between strain energy accumulation in tension versus compression and consequently results in physically unrealistic cracking under compression. A variety of energy splits have been proposed as a possible remedy. However, a unique energy split that can describe this asymmetry for general loading conditions has not been found. The main objective of this paper is to show that a complete phase-field theory of brittle fracture nucleation and propagation, one that accounts for the material strength at large, can naturally capture the tension-compression asymmetry without an energy split. One such theory has been recently proposed by Kumar et al. (2018). Over the past few years, several studies have shown that this theory is capable of accurately describing fracture nucleation and propagation for materials soft and hard under arbitrary monotonic loading conditions. However, a systematic study of the tension-compression asymmetry that emerges from this theory has not yet been reported. This paper does precisely that. In particular, this paper reports a comprehensive study of crack propagation in two problems, one involving a symmetric tension-compression state and the other involving larger compressive stresses at the crack tip. The results are compared with popular energy splits used in literature. The results show that, remarkably, for the second problem, only the complete theory is able to produce experimentally consistent results.
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Submitted 1 February, 2024;
originally announced February 2024.
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Sliding ferroelectric memories and synapses
Authors:
Xiuzhen Li,
Biao Qin,
Yaxian Wang,
Yue Xi,
Zhiheng Huang,
Mengze Zhao,
Yalin Peng,
Zitao Chen,
Zitian Pan,
Jundong Zhu,
Chenyang Cui,
Rong Yang,
Wei Yang,
Sheng Meng,
Dongxia Shi,
Xuedong Bai,
Can Liu,
Na Li,
Jianshi Tang,
Kaihui Liu,
Luojun Du,
Guangyu Zhang
Abstract:
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroe…
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Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding its fundamental properties, functional devices based on sliding ferroelectrics, the key touchstone toward applications, remain elusive. Here, we demonstrate the rewritable, non-volatile memory devices at room-temperature utilizing a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer molybdenum disulfide. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs. Our work demonstrates the sliding ferroelectric memories and synaptic plasticity on both rigid and flexible substrates, highlighting the great potential of sliding ferroelectrics for emerging technological applications in brain-inspired in-memory computing, edge intelligence and energy-efficient wearable electronics.
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Submitted 29 January, 2024;
originally announced January 2024.
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Soft spots of net negative topological charge directly cause the plasticity of 3D glasses
Authors:
Arabinda Bera,
Matteo Baggioli,
Timothy C. Petersen,
Amelia C. Y. Liu,
Alessio Zaccone
Abstract:
The deformation mechanism in amorphous solids subjected to external shear remains poorly understood because of the absence of well-defined topological defects mediating the plastic deformation. The notion of soft spots has emerged as a useful tool to characterize the onset of irreversible rearrangements and plastic flow, but these entities are not well-defined in terms of geometry and topology. In…
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The deformation mechanism in amorphous solids subjected to external shear remains poorly understood because of the absence of well-defined topological defects mediating the plastic deformation. The notion of soft spots has emerged as a useful tool to characterize the onset of irreversible rearrangements and plastic flow, but these entities are not well-defined in terms of geometry and topology. In this study, we unveil the phenomenology of recently discovered, well-defined topological defects governing the microscopic mechanical and yielding behavior of a model 3D glass under shear deformation. We identify the existence of vortex-like and anti-vortex-like topological defects within the 3D non-affine displacement field. The number density of these defects exhibits a significant (inverse) correlation with the plastic events, with defect proliferation-annihilation cycles matching the alternation of elastic-like segments and catastrophic plastic drops, respectively. Furthermore, we observe collective annihilation of these point-like defects via plastic events, with large local topological charge fluctuations in the vicinity of regions that feature strong non-affine displacements. We unveil that plastic yielding is driven by very few, but very large, clusters of net negative topological charge, the massive annihilation of which triggers the onset of plastic flow. These findings suggest a geometric and topological characterization of soft spots and pave the way for the mechanistic understanding of topological defects as mediators of plastic deformation in glassy materials.
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Submitted 9 February, 2024; v1 submitted 27 January, 2024;
originally announced January 2024.
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Phase space path integral approach to the kinetics of black hole phase transition
Authors:
Ran Li,
Conghua Liu,
** Wang
Abstract:
We employ the approach of path integral in the phase space to study the kinetics of state switching associated with black hole phase transitions. Under the assumption that the state switching process of the black hole is described by the stochastic Langevin equation based on the free energy landscape, we derived the Martin-Siggia-Rose-Janssen-de Dominicis (MSRJD) functional and obtained the path i…
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We employ the approach of path integral in the phase space to study the kinetics of state switching associated with black hole phase transitions. Under the assumption that the state switching process of the black hole is described by the stochastic Langevin equation based on the free energy landscape, we derived the Martin-Siggia-Rose-Janssen-de Dominicis (MSRJD) functional and obtained the path integral expression of the transition probability. The MSRJD functional inherently represents the path integral in the phase space, allowing us to extract the effective Hamiltonian for the dynamics of state switching process. By solving the Hamiltonian equations of motion, we obtain the kinetic path in the phase space using an example of the RNAdS black hole. Furthermore, the dominant kinetic path within the configuration space is calculated. We also discuss the kinetic rate by using the functional formalism. Finally, we examine two further examples: Hawking-Page phase transition and Gauss-Bonnet black hole phase transition at the triple point. Our analysis demonstrates that, concerning the Hawking-Page phase transition, while a dominant kinetic path in the phase space from the large SAdS black hole to the thermal AdS space is present, there is no kinetic path for the inverse process. For the Gauss-Bonnet black hole phase transition at the triple point, the state switching processes between the small, the intermediate and the large Gauss-Bonnet black holes constitute a chemical reaction cycle.
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Submitted 6 May, 2024; v1 submitted 4 January, 2024;
originally announced January 2024.