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Unexpected catalytic activity of nanorippled graphene
Authors:
P. Z. Sun,
W. Q. Xiong,
A. Bera,
I. Timokhin,
Z. F. Wu,
A. Mishchenko,
M. C. Sellers,
B. L. Liu,
H. M. Cheng,
E. Janzen,
J. H. Edgar,
I. V. Grigorieva,
S. J. Yuan,
A. K. Geim
Abstract:
Graphite is one of the most chemically inert materials. Its elementary constituent, monolayer graphene, is generally expected to inherit most of the parent material's properties including chemical inertness. Here we show that, unlike graphite, defect-free monolayer graphene exhibits a strong activity with respect to splitting molecular hydrogen, which is comparable to that of metallic and other kn…
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Graphite is one of the most chemically inert materials. Its elementary constituent, monolayer graphene, is generally expected to inherit most of the parent material's properties including chemical inertness. Here we show that, unlike graphite, defect-free monolayer graphene exhibits a strong activity with respect to splitting molecular hydrogen, which is comparable to that of metallic and other known catalysts for this reaction. We attribute the unexpected catalytic activity to surface corrugations (nanoscale ripples), a conclusion supported by theory. Nanoripples are likely to play a role in other chemical reactions involving graphene and, because nanorippling is inherent to atomically thin crystals, can be important for two dimensional materials in general.
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Submitted 14 March, 2023;
originally announced March 2023.
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Exponentially selective molecular sieving through angstrom pores
Authors:
P. Z. Sun,
M. Yagmurcukardes,
R. Zhang,
W. J. Kuang,
M. Lozada-Hidalgo,
B. L. Liu,
H. -M. Cheng,
F. C. Wang,
F. M. Peeters,
I. V. Grigorieva,
A. K. Geim
Abstract:
Two-dimensional crystals with angstrom-scale pores are widely considered as candidates for a next generation of molecular separation technologies aiming to provide extreme, exponentially large selectivity combined with high flow rates. No such pores have been demonstrated experimentally. Here we study gas transport through individual graphene pores created by low intensity exposure to low kV elect…
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Two-dimensional crystals with angstrom-scale pores are widely considered as candidates for a next generation of molecular separation technologies aiming to provide extreme, exponentially large selectivity combined with high flow rates. No such pores have been demonstrated experimentally. Here we study gas transport through individual graphene pores created by low intensity exposure to low kV electrons. Helium and hydrogen permeate easily through these pores whereas larger species such as xenon and methane are practically blocked. Permeating gases experience activation barriers that increase quadratically with molecules' kinetic diameter, and the effective diameter of the created pores is estimated as ~2 angstroms, about one missing carbon ring. Our work reveals stringent conditions for achieving the long sought-after exponential selectivity using porous two-dimensional membranes and suggests limits on their possible performance.
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Submitted 9 December, 2021; v1 submitted 6 April, 2021;
originally announced April 2021.
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Perfect proton selectivity in ion transport through two-dimensional crystals
Authors:
L. Mogg,
S. Zhang,
G. -P. Hao,
K. Gopinadhan,
D. Barry,
B. L. Liu,
H. M. Cheng,
A. K. Geim,
M. Lozada-Hidalgo
Abstract:
Defect-free monolayers of graphene and hexagonal boron nitride were previously shown to be surprisingly permeable to thermal protons, despite being completely impenetrable to all gases. It remains untested whether small ions can permeate through the two-dimensional crystals. Here we show that mechanically exfoliated graphene and hexagonal boron nitride exhibit perfect Nernst selectivity such that…
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Defect-free monolayers of graphene and hexagonal boron nitride were previously shown to be surprisingly permeable to thermal protons, despite being completely impenetrable to all gases. It remains untested whether small ions can permeate through the two-dimensional crystals. Here we show that mechanically exfoliated graphene and hexagonal boron nitride exhibit perfect Nernst selectivity such that only protons can permeate through, with no detectable flow of counterions. In the experiments, we used suspended monolayers that had few if any atomic-scale defects, as shown by gas permeation tests, and placed them to separate reservoirs filled with hydrochloric acid solutions. Protons accounted for all the electrical current and chloride ions were blocked. This result corroborates the previous conclusion that thermal protons can pierce defect-free two-dimensional crystals. Besides importance for theoretical developments, our results are also of interest for research on various separation technologies based on two-dimensional materials.
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Submitted 31 August, 2019; v1 submitted 21 August, 2019;
originally announced August 2019.
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Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers
Authors:
G. Wang,
X. Marie,
B. L. Liu,
T. Amand,
C. Robert,
F. Cadiz,
P. Renucci,
B. Urbaszek
Abstract:
The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are induced. Linearly polarized laser excitation prepares a coherent superposition of valley states. Here we demonstrate the control of the exciton valley coherence…
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The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are induced. Linearly polarized laser excitation prepares a coherent superposition of valley states. Here we demonstrate the control of the exciton valley coherence in monolayer WSe2 by tuning the applied magnetic field perpendicular to the monolayer plane. We show rotation of this coherent superposition of valley states by angles as large as 30 degrees in applied fields up to 9 T. This exciton valley coherence control on ps time scale could be an important step towards complete control of qubits based on the valley degree of freedom.
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Submitted 7 June, 2016;
originally announced June 2016.
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Spin and valley dynamics of excitons in transition metal dichalcogenides monolayers
Authors:
M. M. Glazov,
E. L. Ivchenko,
G. Wang,
T. Amand,
X. Marie,
B. Urbaszek,
B. L. Liu
Abstract:
Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by circularly polarized light selectively creates electron-hole pairs or excitons in non-equivalent valleys in momentum space, depending on the light helicity. This allows…
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Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by circularly polarized light selectively creates electron-hole pairs or excitons in non-equivalent valleys in momentum space, depending on the light helicity. This allows studying the inter-valley dynamics of charge carriers and Coulomb complexes by means of optical spectroscopy. Here we present a concise review of the neutral exciton fine structure and its spin and valley dynamics in monolayers of transition metal dichalcogenides. It is demonstrated that the long-range exchange interaction between an electron and a hole in the exciton is an efficient mechanism for rapid mixing between bright excitons made of electron-hole pairs in different valleys. We discuss the physical origin of the long-range exchange interaction and outline its derivation in both the electrodynamical and $\mathbf k \cdot \mathbf p$ approaches. We further present a model of bright exciton spin dynamics driven by an interplay between the long-range exchange interaction and scattering. Finally, we discuss the application of the model to describe recent experimental data obtained by time-resolved photoluminescence and Kerr rotation techniques.
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Submitted 16 September, 2015; v1 submitted 15 April, 2015;
originally announced April 2015.
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Exciton Valley Dynamics probed by Kerr Rotation in WSe2 Monolayers
Authors:
C. R. Zhu,
K. Zhang,
M. Glazov,
B. Urbaszek,
T. Amand,
Z. W. Ji,
B. L. Liu,
X. Marie
Abstract:
We have experimentally studied the pump-probe Kerr rotation dynamics in WSe$_2$ monolayers. This yields a direct measurement of the exciton valley depolarization time $τ_v$. At T=4K, we find $τ_v\approx 6$ps, a fast relaxation time resulting from the strong electron-hole Coulomb exchange interaction in bright excitons. The exciton valley depolarization time decreases significantly when the lattice…
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We have experimentally studied the pump-probe Kerr rotation dynamics in WSe$_2$ monolayers. This yields a direct measurement of the exciton valley depolarization time $τ_v$. At T=4K, we find $τ_v\approx 6$ps, a fast relaxation time resulting from the strong electron-hole Coulomb exchange interaction in bright excitons. The exciton valley depolarization time decreases significantly when the lattice temperature increases with $τ_v$ being as short as 1.5ps at 125K. The temperature dependence is well explained by the developed theory taking into account the exchange interaction and a fast exciton scattering time on short-range potentials.
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Submitted 22 July, 2014;
originally announced July 2014.
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Electron Spin Dephasing and Optical Pum** of Nuclear Spins in GaN
Authors:
G. Wang,
C. R. Zhu,
B. L. Liu,
H. Ye,
A. Balocchi,
T. Amand,
B. Urbaszek,
H. Yang,
X. Marie
Abstract:
We have measured the donor-bound electron spin dynamics in cubic GaN by time-resolved Kerr rotation experiments. The ensemble electron spin dephasing time in this quantum dot like system characterized by a Bohr radius of 2.5 nm is of the order of 1.5 ns as a result of the interaction with the fluctuating nuclear spins. It increases drastically when an external magnetic field as small as 10 mT is a…
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We have measured the donor-bound electron spin dynamics in cubic GaN by time-resolved Kerr rotation experiments. The ensemble electron spin dephasing time in this quantum dot like system characterized by a Bohr radius of 2.5 nm is of the order of 1.5 ns as a result of the interaction with the fluctuating nuclear spins. It increases drastically when an external magnetic field as small as 10 mT is applied. We extract a dispersion of the nuclear hyperfine field δBn $\sim$ 4 mT, in agreement with calculations. We also demonstrate for the first time in GaN based systems the optical pum** of nuclear spin yielding the build-up of a significant nuclear polarization.
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Submitted 21 July, 2014;
originally announced July 2014.
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Magnetic Field Effect on Electron Spin Dynamics in (110) GaAs Quantum wells
Authors:
G. Wang,
A. Balocchi,
A. V. Poshakinskiy,
C. R. Zhu,
S. A. Tarasenko,
T. Amand,
B. L. Liu,
X. Marie
Abstract:
We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly polarized light and detected by time-resolved Kerr rotation technique. In the asymmetric structure, where a δ-doped layer on one side of the QW produces the Rashba…
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We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly polarized light and detected by time-resolved Kerr rotation technique. In the asymmetric structure, where a δ-doped layer on one side of the QW produces the Rashba contribution to the conduction-band spin-orbit splitting, the lifetime of electron spins aligned along the growth axis exhibits an anomalous dependence on B in the range 0<B<0.5 T; this results from the interplay between the Dresselhaus and Rashba effective fields which are perpendicular to each other. For larger magnetic fields, the spin lifetime increases, which is the consequence of the cyclotron motion of the electrons and is also observed in (001)-grown quantum wells. The experimental results are in agreement with the calculation of the spin lifetimes in (110)- grown asymmetric quantum wells described by the point group Cs where the growth direction is not the principal axis of the spin-relaxation-rate tensor.
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Submitted 6 December, 2013;
originally announced December 2013.
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Carrier and polarization dynamics in monolayer MoS2
Authors:
D. Lagarde,
L. Bouet,
X. Marie,
C. R. Zhu,
B. L. Liu,
T. Amand,
P. H. Tan,
B. Urbaszek
Abstract:
In monolayer MoS2 optical transitions across the direct bandgap are governed by chiral selection rules, allowing optical valley initialization. In time resolved photoluminescence (PL) experiments we find that both the polarization and emission dynamics do not change from 4K to 300K within our time resolution. We measure a high polarization and show that under pulsed excitation the emission polariz…
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In monolayer MoS2 optical transitions across the direct bandgap are governed by chiral selection rules, allowing optical valley initialization. In time resolved photoluminescence (PL) experiments we find that both the polarization and emission dynamics do not change from 4K to 300K within our time resolution. We measure a high polarization and show that under pulsed excitation the emission polarization significantly decreases with increasing laser power. We find a fast exciton emission decay time on the order of 4ps. The absence of a clear PL polarization decay within our time resolution suggests that the initially injected polarization dominates the steady state PL polarization. The observed decrease of the initial polarization with increasing pump photon energy hints at a possible ultrafast intervalley relaxation beyond the experimental ps time resolution. By compensating the temperature induced change in bandgap energy with the excitation laser energy an emission polarization of 40% is recovered at 300K, close to the maximum emission polarization for this sample at 4K.
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Submitted 3 February, 2014; v1 submitted 3 August, 2013;
originally announced August 2013.
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Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
Authors:
G. Wang,
C. R. Zhu,
B. L. Liu,
X. Marie,
Q. X. Feng,
X. X. Wu,
H. Fan,
P. H. Tan,
T. Amand,
B. Urbaszek
Abstract:
We use micro-Raman and photoluminescence (PL) spectroscopy at 300K to investigate the influence of uniaxial tensile strain on the vibrational and optoelectronic properties of monolayer and bilayer MoS2 on a flexible substrate. The initially degenerate E^1_{2g} Raman mode is split into a doublet as a direct consequence of the strain applied to MoS2 through Van der Waals coupling at the sample-subst…
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We use micro-Raman and photoluminescence (PL) spectroscopy at 300K to investigate the influence of uniaxial tensile strain on the vibrational and optoelectronic properties of monolayer and bilayer MoS2 on a flexible substrate. The initially degenerate E^1_{2g} Raman mode is split into a doublet as a direct consequence of the strain applied to MoS2 through Van der Waals coupling at the sample-substrate interface. We observe a strong shift of the direct band gap of 48meV/(% of strain) for the monolayer and 46meV/% for the bilayer, whose indirect gap shifts by 86meV/%. We find a strong decrease of the PL polarization linked to optical valley initialization for both monolayer and bilayer samples, indicating that scattering to the spin-degenerate Gamma valley plays a key role.
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Submitted 14 June, 2013;
originally announced June 2013.
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Robust optical emission polarization in MoS2 monolayers through selective valley excitation
Authors:
G. Sallen,
L. Bouet,
X. Marie,
G. Wang,
C. R. Zhu,
W. P. Han,
Y. Lu,
P. H. Tan,
T. Amand,
B. L. Liu,
B. Urbaszek
Abstract:
We report polarization resolved photoluminescence from monolayer MoS2, a two-dimensional, non-centrosymmetric crystal with direct energy gaps at two different valleys in momentum space. The inherent chiral optical selectivity allows exciting one of these valleys and close to 90% polarized emission at 4K is observed with 40% polarization remaining at 300K. The high polarization degree of the emissi…
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We report polarization resolved photoluminescence from monolayer MoS2, a two-dimensional, non-centrosymmetric crystal with direct energy gaps at two different valleys in momentum space. The inherent chiral optical selectivity allows exciting one of these valleys and close to 90% polarized emission at 4K is observed with 40% polarization remaining at 300K. The high polarization degree of the emission remains unchanged in transverse magnetic fields up to 9T indicating robust, selective valley excitation.
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Submitted 9 August, 2012; v1 submitted 22 June, 2012;
originally announced June 2012.
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Growth Direction Dependence of the Electron Spin Dynamics in {111} GaAs Quantum Wells
Authors:
H. Q. Ye,
G. Wang,
B. L. Liu,
Z. W. Shi,
W. X. Wang,
C. Fontaine,
A. Balocchi,
T. Amand,
D. Lagarde,
P. Renucci,
X. Marie
Abstract:
The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A…
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The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.
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Submitted 14 May, 2012; v1 submitted 31 March, 2012;
originally announced April 2012.
