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Broken Screw Rotational Symmetry in the Near-Surface Electronic Structure of $AB$-Stacked Crystals
Authors:
Hiroaki Tanaka,
Shota Okazaki,
Masaru Kobayashi,
Yuto Fukushima,
Yosuke Arai,
Takushi Iimori,
Mikk Lippmaa,
Kohei Yamagami,
Yoshinori Kotani,
Fumio Komori,
Kenta Kuroda,
Takao Sasagawa,
Takeshi Kondo
Abstract:
We investigate the electronic structure of $2H$-$\mathrm{Nb}\mathrm{S}_2$ and $h$-$\mathrm{BN}$ by angle-resolved photoemission spectroscopy (ARPES) and photoemission intensity calculations. Although in bulk form, these materials are expected to exhibit band degeneracy in the $k_z=π/c$ plane due to screw rotation and time-reversal symmetries, we observe gapped band dispersion near the surface. We…
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We investigate the electronic structure of $2H$-$\mathrm{Nb}\mathrm{S}_2$ and $h$-$\mathrm{BN}$ by angle-resolved photoemission spectroscopy (ARPES) and photoemission intensity calculations. Although in bulk form, these materials are expected to exhibit band degeneracy in the $k_z=π/c$ plane due to screw rotation and time-reversal symmetries, we observe gapped band dispersion near the surface. We extract from first-principles calculations the near-surface electronic structure probed by ARPES and find that the calculated photoemission spectra from the near-surface region reproduce the gapped ARPES spectra. Our results show that the near-surface electronic structure can be qualitatively different from the bulk one due to partially broken nonsymmorphic symmetries.
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Submitted 29 March, 2024; v1 submitted 2 August, 2023;
originally announced August 2023.
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Semiconducting Electronic Structure of the Ferromagnetic Spinel $\mathbf{Hg}\mathbf{Cr}_2\mathbf{Se}_4$ Revealed by Soft-X-Ray Angle-Resolved Photoemission Spectroscopy
Authors:
Hiroaki Tanaka,
Andrei V. Telegin,
Yurii P. Sukhorukov,
Vladimir A. Golyashov,
Oleg E. Tereshchenko,
Alexander N. Lavrov,
Takuya Matsuda,
Ryusuke Matsunaga,
Ryosuke Akashi,
Mikk Lippmaa,
Yosuke Arai,
Shinichiro Ideta,
Kiyohisa Tanaka,
Takeshi Kondo,
Kenta Kuroda
Abstract:
We study the electronic structure of the ferromagnetic spinel $\mathrm{Hg}\mathrm{Cr}_2\mathrm{Se}_4$ by soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) and first-principles calculations. While a theoretical study has predicted that this material is a magnetic Weyl semimetal, SX-ARPES measurements give direct evidence for a semiconducting state in the ferromagnetic phase. Band calc…
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We study the electronic structure of the ferromagnetic spinel $\mathrm{Hg}\mathrm{Cr}_2\mathrm{Se}_4$ by soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) and first-principles calculations. While a theoretical study has predicted that this material is a magnetic Weyl semimetal, SX-ARPES measurements give direct evidence for a semiconducting state in the ferromagnetic phase. Band calculations based on the density functional theory with hybrid functionals reproduce the experimentally determined band gap value, and the calculated band dispersion matches well with ARPES experiments. We conclude that the theoretical prediction of a Weyl semimetal state in $\mathrm{Hg}\mathrm{Cr}_2\mathrm{Se}_4$ underestimates the band gap, and this material is a ferromagnetic semiconductor.
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Submitted 1 May, 2023; v1 submitted 28 November, 2022;
originally announced November 2022.
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Critical role of terminating layer in formation of 2DEG state at the $LaInO_{3}$/$BaSnO_{3}$ interface
Authors:
Seonghyeon Kim,
Mikk Lippmaa,
Jaehyeok Lee,
Hyeongmin Cho,
Juhan Kim,
Bongju Kim,
Kookrin Char
Abstract:
Based on the interface polarization model, the two-dimensional electron gas (2DEG) at $LaInO_{3}$(LIO)/$BaSnO_{3}$(BSO) interfaces is understood to originate from a polarization discontinuity at the interface and the conduction band offset between LIO and BSO. In this scenario, the direction of polarization at the interface is determined by whether the first atomic LIO layer at the interface is La…
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Based on the interface polarization model, the two-dimensional electron gas (2DEG) at $LaInO_{3}$(LIO)/$BaSnO_{3}$(BSO) interfaces is understood to originate from a polarization discontinuity at the interface and the conduction band offset between LIO and BSO. In this scenario, the direction of polarization at the interface is determined by whether the first atomic LIO layer at the interface is LaO$^{+}$ or InO$_{2}^{-}$. We investigate the role of the terminating layer at the LIO/BSO interface in creating the 2DEG. Based on conductance measurements of our in-situ grown LIO/BSO heterostructures, we report in this work that the 2DEG only forms when the BSO surface is terminated with a SnO$_{2}$ layer. We controlled the terminating layer by additional SnO$_{2}$ deposition on the BSO surface. We show that the as-grown BSO surface has a mixed terminating layer of BaO and SnO$_{2}$ while the BSO surfaces prepared with additional SnO$_{2}$ deposition are terminated mainly with the SnO$_{2}$ layer. The terminating layer was confirmed by coaxial impact collision ion scattering spectroscopy (CAICISS). Our finding is consistent with the interface polarization model for 2DEG formation at LIO/BSO interfaces, in which the direction of the interfacial polarization in LIO is determined by the terminating layer of the BSO surface.
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Submitted 5 August, 2022;
originally announced August 2022.
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Observation and control of the weak topological insulator state in ZrTe5
Authors:
Peng Zhang,
Ryo Noguchi,
Kenta Kuroda,
Chun Lin,
Kaishu Kawaguchi,
Koichiro Yaji,
Ayumi Harasawa,
Mikk Lippmaa,
Simin Nie,
Hongming Weng,
V. Kandyba,
A. Giampietri,
A. Barinov,
Qiang Li,
G. D. Gu,
Shik Shin,
Takeshi Kondo
Abstract:
A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces of crystals. The enhanced confinement could provide a route for dissipationless…
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A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces of crystals. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to the widely studied strong topological insulators. However, the topological side surface is usually not cleavable and is thus hard to observe by angle-resolved photoemission spectroscopy (ARPES), which has hindered the revealing of the electronic properties of WTIs. Here, we visualize the topological surface states of the WTI candidate ZrTe5 for the first time by spin and angle-resolved photoemission spectroscopy: a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap in ZrTe5 is controlled by strain to the crystal, realizing a more stabilized WTI state or an ideal Dirac semimetal state depending on the direction of the external strain. The highly directional spin-current and the tunable band gap we found in ZrTe5 will provide an excellent platform for applications.
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Submitted 9 December, 2020;
originally announced December 2020.
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Dielectric anomalies and interactions in the 3D quadratic band touching Luttinger semimetal Pr$_2$Ir$_2$O$_7$
Authors:
Bing Cheng,
T. Ohtsuki,
Dipanjan Chaudhuri,
S. Nakatsuji,
Mikk Lippmaa,
N. P. Armitage
Abstract:
Dirac and Weyl semimetals with linearly crossing bands are the focus of much recent interest in condensed matter physics. Although they host fascinating phenomena, their physics can be understood in terms of weakly interacting electrons. In contrast, more than 40 years ago, Abrikosov pointed out that quadratic band touchings are generically strongly interacting. We have performed terahertz spectro…
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Dirac and Weyl semimetals with linearly crossing bands are the focus of much recent interest in condensed matter physics. Although they host fascinating phenomena, their physics can be understood in terms of weakly interacting electrons. In contrast, more than 40 years ago, Abrikosov pointed out that quadratic band touchings are generically strongly interacting. We have performed terahertz spectroscopy on films of the conducting pyrochlore Pr$_2$Ir$_2$O$_7$, which has been shown to host a quadratic band touching. A dielectric constant as large as $\tilde{\varepsilon }/ε_0 \sim 180 $ is observed at low temperatures. In such systems the dielectric constant is a measure of the relative scale of interactions, which are therefore in our material almost two orders of magnitude larger than the kinetic energy. Despite this, the scattering rate exhibits a $T^2$ dependence, which shows that for finite do** a Fermi liquid state survives, however with a scattering rate close to the maximal value allowed.
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Submitted 28 November, 2017;
originally announced November 2017.
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Spontaneous Hall effect induced by strain in Pr$_2$Ir$_2$O$_7$ epitaxial thin films
Authors:
Takumi Ohtsuki,
Zhaoming Tian,
Akira Endo,
Mario Halim,
Shingo Katsumoto,
Yoshimitsu Kohama,
Koichi Kindo,
Satoru Nakatsuji,
Mikk Lippmaa
Abstract:
Strongly correlated iridate pyrochlores with geometrically frustrated spins have been recognized as a potentially interesting group of oxide materials where novel topological phases may appear. A particularly attractive system is the metallic Pr$_2$Ir$_2$O$_7$, as it is known as a Fermi node semimetal characterized by quadratic band touching at the Brillouin zone center, suggesting that the topolo…
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Strongly correlated iridate pyrochlores with geometrically frustrated spins have been recognized as a potentially interesting group of oxide materials where novel topological phases may appear. A particularly attractive system is the metallic Pr$_2$Ir$_2$O$_7$, as it is known as a Fermi node semimetal characterized by quadratic band touching at the Brillouin zone center, suggesting that the topology of its electronic states can be tuned by moderate lattice strain. In this work we report the growth of epitaxial Pr$_2$Ir$_2$O$_7$ thin films grown by solid-state epitaxy. We show that the strained parts of the films give rise to a spontaneous Hall effect that persists up to 50 K without having spontaneous magnetization within our experimental accuracy. This indicates that a macroscopic time reversal symmetry (TRS) breaking appears at a temperature scale that is too high for the magnetism to be due to Pr 4$f$ moments, and must thus be related to magnetic order of the iridium 5$d$ electrons. The magnetotransport and Hall analysis results are consistent with the formation of a Weyl semimetal state that is induced by a combination of TRS breaking and cubic symmetry breaking due to lattice strain.
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Submitted 21 November, 2017;
originally announced November 2017.
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A-site driven ferroelectricity in strained ferromagnetic L2NiMnO6 thin films
Authors:
R. Takahashi,
I. Ohkubo,
K. Yamauchi,
M. Kitamura,
Y. Sakurai,
M. Oshima,
T. Oguchi,
Y. Cho,
M. Lippmaa
Abstract:
We report on theoretical and experimental investigation of A-site driven ferroelectricity in ferromagnetic La2NiMnO6 thin films grown on SrTiO3 substrates. Structural analysis and density functional theory calculations show that epitaxial strain stretches the rhombohedral La2NiMnO6 crystal lattice along the [111]cubic direction, triggering a displacement of the A-site La ions in the double perovsk…
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We report on theoretical and experimental investigation of A-site driven ferroelectricity in ferromagnetic La2NiMnO6 thin films grown on SrTiO3 substrates. Structural analysis and density functional theory calculations show that epitaxial strain stretches the rhombohedral La2NiMnO6 crystal lattice along the [111]cubic direction, triggering a displacement of the A-site La ions in the double perovskite lattice. The lattice distortion and the A-site displacements stabilize a ferroelectric polar state in ferromagnetic La2NiMnO6 crystals. The ferroelectric state only appears in the rhombohedral La2NiMnO6 phase, where MnO6 and NiO6 octahedral tilting is inhibited by the 3-fold crystal symmetry. Electron localization map** showed that covalent bonding with oxygen and 6s orbital lone pair formation are negligible in this material.
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Submitted 19 April, 2015;
originally announced April 2015.
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Spectroscopic studies on the electronic and magnetic states of Co-doped perovskite manganite Pr0.8Ca0.2Mn1-yCoyO3 thin films
Authors:
K. Yoshimatsu,
H. Wadati,
E. Sakai,
T. Harada,
Y. Takahashi,
T. Harano,
G. Shibata,
K. Ishigami,
T. Kadono,
T. Koide,
T. Sugiyama,
E. Ikenaga,
H. Kumigashira,
M. Lippmaa,
M. Oshima,
A. Fujimori
Abstract:
We have investigated the electronic and magnetic properties of Co-doped Pr0.8Ca0.2MnO3 thin films using various spectroscopic techniques. X-ray absorption and hard x-ray photoemission spectroscopy revealed that the substituted Co ions are in the divalent state, resulting in hole do** on the Mn atoms. Studies of element-selective magnetic properties by x-ray magnetic circular dichroism found a la…
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We have investigated the electronic and magnetic properties of Co-doped Pr0.8Ca0.2MnO3 thin films using various spectroscopic techniques. X-ray absorption and hard x-ray photoemission spectroscopy revealed that the substituted Co ions are in the divalent state, resulting in hole do** on the Mn atoms. Studies of element-selective magnetic properties by x-ray magnetic circular dichroism found a large orbital magnetic moment for the Co ions. These spectroscopic studies reveal that the substituted Co ions play several roles of hole do** for Mn, ferromagnetic superexchange coupling between the Co2+ and Mn4+ ions, and orbital magnetism of the Co2+ ions. Competition among these complex interactions produces the unique electronic and magnetic behaviors including enhanced coercivity of the Co-doped Pr0.8Ca0.2MnO3.
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Submitted 11 November, 2013;
originally announced November 2013.
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Pyroelectric detection of spontaneous polarization in magnetite thin films
Authors:
R. Takahashi,
H. Misumi,
M. Lippmaa
Abstract:
We have investigated the spontaneous polarization in Fe$_3$O$_4$ thin films by using dynamic and static pyroelectric measurements. The magnetic and dielectric behavior of Fe$_3$O$_4$ thin films grown on Nb:SrTiO$_3$(001) substrates was consistent with bulk crystals. The well-known metal-insulator (Verwey) transition was observed at 120 K. The appearance of a pyroelectric response in the Fe$_3$O…
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We have investigated the spontaneous polarization in Fe$_3$O$_4$ thin films by using dynamic and static pyroelectric measurements. The magnetic and dielectric behavior of Fe$_3$O$_4$ thin films grown on Nb:SrTiO$_3$(001) substrates was consistent with bulk crystals. The well-known metal-insulator (Verwey) transition was observed at 120 K. The appearance of a pyroelectric response in the Fe$_3$O$_4$ thin films just below the Verwey temperature shows that spontaneous polarization appeared in Fe$_3$O$_4$ at the charge ordering transition temperature. The polar state characteristics are consistent with bond- and site- centered charge ordering of Fe$^{2+}$ and Fe$^{3+}$ ions sharing the octahedral $B$ sites. The pyroelectric response in Fe$_3$O$_4$ thin films was dependent on the dielectric constant. Quasi-static pyroelectric measurement of Pd/Fe$_3$O$_4$/Nb:SrTiO$_3$ junctions showed that magnetite has a very large pyroelectric coefficient of 735 nC/cm$^{2}$K at 60 K.
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Submitted 21 September, 2012;
originally announced September 2012.
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Spin-filter tunnel junction with matched Fermi surfaces
Authors:
T. Harada,
I. Ohkubo,
M. Lippmaa,
Y. Sakurai,
Y. Matsumoto,
S. Muto,
H. Koinuma,
M. Oshima
Abstract:
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of spin-filter-type spin injectors is limited by spin scattering of the tunneling electrons. By matching the Fermi-surface shapes of the current injection source and target…
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Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of spin-filter-type spin injectors is limited by spin scattering of the tunneling electrons. By matching the Fermi-surface shapes of the current injection source and target electrode material, spin injection efficiency can be significantly increased in epitaxial ferromagnetic insulator tunnel junctions. Our results demonstrate that not only structural but also Fermi-surface matching is important to suppress scattering processes in spintronic devices.
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Submitted 2 August, 2012; v1 submitted 23 July, 2012;
originally announced July 2012.
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Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution
Authors:
T. Harada,
I. Ohkubo,
M. Lippmaa,
Y. Matsumoto,
M. Sumiya,
H. Koinuma,
M. Oshima
Abstract:
Ferromagnetic insulator Pr0.8Ca0.2Mn1-yCoyO3 (0 <= y <= 0.7) thin films were epitaxially grown on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) substrates by pulsed laser deposition. To probe the ferromagnetic insulator state of hole-doped manganites, the Co content dependences of the structural, magnetic, and transport properties were studied. Variation of lattice constant by the substitution of Co ions…
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Ferromagnetic insulator Pr0.8Ca0.2Mn1-yCoyO3 (0 <= y <= 0.7) thin films were epitaxially grown on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) substrates by pulsed laser deposition. To probe the ferromagnetic insulator state of hole-doped manganites, the Co content dependences of the structural, magnetic, and transport properties were studied. Variation of lattice constant by the substitution of Co ions is well reproduced considering that divalent and trivalent Co ions substitute for Mn ions at the perovskite B-sites. For 0 <= y <= 0.3, the Curie temperature, saturation magnetization, and magnetoresistance increase with increasing Co content, retaining the insulating properties. Detailed analyses of transport and magnetic properties indicate the contribution of both double exchange and superexchange interactions to the appearance of the ferromagnetic insulating phase.
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Submitted 1 November, 2010; v1 submitted 25 August, 2010;
originally announced September 2010.
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Bulk-like d band of SrVO3 under a self-protective cap layer
Authors:
M. Takizawa,
M. Minohara,
H. Kumigashira,
D. Toyota,
M. Oshima,
H. Wadati,
T. Yoshida,
A. Fujimori,
M. Lippmaa,
M. Kawasaki,
H. Koinuma,
G. Sordi,
M. Rozenberg
Abstract:
We have performed a detailed angel-resolved photoemission spectroscopy study of in-situ prepared SrVO3 thin films. Naturally capped by a ``transparent'' protective layer, contributions from surface states centered at ~ -1.5 eV are dramatically reduced, enabling us to study the bulk V 3d states. We have observed a clear band dispersion not only in the coherent quasiparticle part but also in the i…
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We have performed a detailed angel-resolved photoemission spectroscopy study of in-situ prepared SrVO3 thin films. Naturally capped by a ``transparent'' protective layer, contributions from surface states centered at ~ -1.5 eV are dramatically reduced, enabling us to study the bulk V 3d states. We have observed a clear band dispersion not only in the coherent quasiparticle part but also in the incoherent part, which are reproduced by dynamical mean-field theory calculations and the spectral weight of the incoherent part is stronger within the Fermi surface.
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Submitted 13 June, 2008;
originally announced June 2008.
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In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations
Authors:
H. Wadati,
A. Maniwa,
A. Chikamatsu,
I. Ohkubo,
H. Kumigashira,
M. Oshima,
A. Fujimori,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with do**, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra,…
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We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with do**, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra, we found a do**-induced energy shift toward the Fermi level (E_F) but there was no spectral weight transfer, which was observed in bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions determined by angle-resolved photoemission spectroscopy and could not be explained by the metallic band structure of the C-type antiferromagnetic state, probably due to localization of electrons along the ferromagnetic chain direction or due to another type of spin-orbital ordering.
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Submitted 17 August, 2007; v1 submitted 10 August, 2007;
originally announced August 2007.
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Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in La$_{1-x}$Sr$_{x}$MnO$_{3}$
Authors:
A. Chikamatsu,
H. Wadati,
H. Kumigashira,
M. Oshima,
A. Fujimori,
M. Lippmaa,
K. Ono,
M. Kawasaki,
H. Koinuma
Abstract:
We report the first observation of changes in the electronic structure of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (LSMO) across the filling-control metal-insulator (MI) transition by means of in situ angle-resolved photoemission spectroscopy (ARPES) of epitaxial thin films. The Fermi surface gradually disappears near the MI transition by transferring the spectral weight from the coherent band near the Fermi…
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We report the first observation of changes in the electronic structure of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (LSMO) across the filling-control metal-insulator (MI) transition by means of in situ angle-resolved photoemission spectroscopy (ARPES) of epitaxial thin films. The Fermi surface gradually disappears near the MI transition by transferring the spectral weight from the coherent band near the Fermi level ($E_{F}$) to the lower Hubbard band, whereas a pseudogap behavior also exists in the ARPES spectra in the close vicinity of $E_{F}$ for the metallic LSMO. These results indicate that the spectral weight transfer derived from strong electron-electron interaction dominates the gap formation in LSMO associated with the filling-control MI transition.
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Submitted 4 May, 2007;
originally announced May 2007.
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Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices
Authors:
M. Takizawa,
H. Wadati,
K. Tanaka,
M. Hashimoto,
T. Yoshida,
A. Fujimori,
A. Chikamtsu,
H. Kumigashira,
M. Oshima,
K. Shibuya,
T. Mihara,
T. Ohnishi,
M. Lippmaa,
M. Kawasaki,
H. Koinuma,
S. Okamoto,
A. J. Millis
Abstract:
We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. Finite coherent spectral weight with a clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an ``electronic reconstruction'' occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 in…
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We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. Finite coherent spectral weight with a clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an ``electronic reconstruction'' occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces annealed at high temperatures (~ 1000 C), which leads to Sr/La atomic interdiffusion and hence to the formation of La1-xSrxTiO3-like material, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cut-off is enhanced due to the spread of charge. These important experimental features are well reproduced by layer dynamical-mean-field-theory calculation.
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Submitted 7 April, 2006;
originally announced April 2006.
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Effect of strong localization of doped holes in angle-resolved photoemission spectra of La$_{1-x}$Sr$_x$FeO$_3$
Authors:
H. Wadati,
A. Chikamatsu,
M. Takizawa,
R. Hashimoto,
H. Kumigashira,
T. Yoshida,
T. Mizokawa,
A. Fujimori,
M. Oshima,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have performed an angle-resolved photoemission spectroscopy study of La$_{0.6}$Sr$_{0.4}$FeO$_3$ using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level (…
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We have performed an angle-resolved photoemission spectroscopy study of La$_{0.6}$Sr$_{0.4}$FeO$_3$ using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level ($E_F$) by $\sim 1$ eV compared with the calculation and to form a (pseudo)gap of $\sim 1$ eV at $E_F$. We attribute this observation to a strong localization effect of doped holes due to polaron formation.
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Submitted 13 March, 2006;
originally announced March 2006.
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Robust Ti4+ states in SrTiO3 layers of La0.6Sr0.4MnO3/SrTiO3/ La0.6Sr0.4MnO3 junctions
Authors:
H. Kumigashira,
A. Chikamatsu,
R. Hashimoto,
M. Oshima,
T. Ohnishi,
M. Lippmaa,
H. Wadati,
A. Fujimori,
K. Ono,
M. Kawasaki,
H. Koinuma
Abstract:
We have investigated the interfacial electronic structure of La0.6Sr0.4MnO3 (LSMO)/ SrTiO3 (STO)/ LSMO heterojunctions utilizing the elemental selectivity of photoemission spectroscopy. The Ti 2p core-level spectra clearly show Ti4+ states and do not exhibit any indication of Ti3+ states in TiO2 layers irrespective of a different kind of adjacent atomic layer with different chemical carrier conc…
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We have investigated the interfacial electronic structure of La0.6Sr0.4MnO3 (LSMO)/ SrTiO3 (STO)/ LSMO heterojunctions utilizing the elemental selectivity of photoemission spectroscopy. The Ti 2p core-level spectra clearly show Ti4+ states and do not exhibit any indication of Ti3+ states in TiO2 layers irrespective of a different kind of adjacent atomic layer with different chemical carrier concentration. This result indicates that the Ti ions in the TiO2 atomic layers preserve their tetravalent states even in the vicinity of the valence-mismatched interface between LSMO and STO, reflecting chemical stability of the Ti4+ states.
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Submitted 19 October, 2005;
originally announced October 2005.
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Epitaxial growth and transport properties of Nb-doped SrTiO$_{3}$ thin films
Authors:
K. S. Takahashi,
D. Jaccard,
K. Shibuya,
T. Ohnishi,
M. Lippmaa,
J. -M. Triscone
Abstract:
Nb-doped SrTiO$_{3}$ epitaxial thin films have been prepared on (001) SrTiO$_{3}$ substrates using pulsed laser deposition. A high substrate temperature ($>1000^{\circ}{C}$) was found to be necessary to achieve 2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces with 3.9 Å$ $ steps. The films show a metallic behavior, residual resistivity ratios between 10 and 100, and…
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Nb-doped SrTiO$_{3}$ epitaxial thin films have been prepared on (001) SrTiO$_{3}$ substrates using pulsed laser deposition. A high substrate temperature ($>1000^{\circ}{C}$) was found to be necessary to achieve 2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces with 3.9 Å$ $ steps. The films show a metallic behavior, residual resistivity ratios between 10 and 100, and low residual resistivity of the order of 10$^{-4}$$Ω$cm. At 0.3 K, a sharp superconducting transition, reaching zero resistance, is observed.
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Submitted 2 August, 2005;
originally announced August 2005.
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High Throughput Oxide Lattice Engineering by Parallel Laser Molecular Beam Epitaxy and Concurrent X-ray Diffraction
Authors:
M. Ohtani,
M. Lippmaa,
T. Ohnishi,
M. Kawasaki
Abstract:
A novel laser molecular beam epitaxy (LMBE) system for the fabrication of atomically controlled oxides superlattices and an x-ray diffractometer that measures spatially-resolved x-ray diffraction spectra have been developed based on the concept of combinatorial methodology. The LMBE chamber has two moving masks, an automated target stage, a substrate heating laser, and an in-situ scanning reflec…
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A novel laser molecular beam epitaxy (LMBE) system for the fabrication of atomically controlled oxides superlattices and an x-ray diffractometer that measures spatially-resolved x-ray diffraction spectra have been developed based on the concept of combinatorial methodology. The LMBE chamber has two moving masks, an automated target stage, a substrate heating laser, and an in-situ scanning reflection high-energy electron diffraction system. The x-ray diffractometer with a curved monochromator and two-dimensional detector is used for rapid concurrent x-ray diffraction intensity map** with the two axes of the detector corresponding to the diffraction angle and a position in the sample.
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Submitted 14 April, 2005;
originally announced April 2005.
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The band structure and Fermi surface of La$_{0.6}$Sr$_{0.4}$MnO$_{3}$ thin films studied by in-situ angle-resolved photoemission spectroscopy
Authors:
A. Chikamatsu,
H. Wadati,
H. Kumigashira,
M. Oshima,
A. Fujimori,
N. Hamada,
T. Ohnishi,
M. Lippmaa,
K. Ono,
M. Kawasaki,
H. Koinuma
Abstract:
We have performed an in situ angle-resolved photoemission spectroscopy (ARPES) on single-crystal surfaces of La$_{0.6}$Sr$_{0.4}$MnO$_{3}$ (LSMO) thin films grown on SrTiO$_{3}$ (001) substrates by laser molecular beam epitaxy, and investigated the electronic structure near the Fermi level ($E_{F}$). The experimental results were compared with the band-structure calculation based on LDA + $U$. T…
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We have performed an in situ angle-resolved photoemission spectroscopy (ARPES) on single-crystal surfaces of La$_{0.6}$Sr$_{0.4}$MnO$_{3}$ (LSMO) thin films grown on SrTiO$_{3}$ (001) substrates by laser molecular beam epitaxy, and investigated the electronic structure near the Fermi level ($E_{F}$). The experimental results were compared with the band-structure calculation based on LDA + $U$. The band structure of LSMO thin films consists of several highly dispersive O 2$p$ derived bands in the binding energy range of 2.0 - 6.0 eV and Mn 3$d$ derived bands near $E_{F}$. ARPES spectra around the $Gamma$ point show a dispersive band near $E_{F}$ indicative of an electron pocket centered at the $Gamma$ point, although it was not so clearly resolved as an electronlike pocket due to the suppression of spectral weight in the vicinity of $E_{F}$. Compared with the band-structure calculation, the observed conduction band is assigned to the Mn 3$de_{g}$ majority-spin band responsible for the half-metallic nature of LSMO. We have found that the estimated size of the Fermi surface is consistent with the prediction of the band-structure calculation, while the band width becomes significantly narrower than the calculation. Also, the intensity near $E_{F}$ is strongly reduced. The origin of these discrepancies between the experiment and the calculation is discussed.
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Submitted 15 March, 2005;
originally announced March 2005.
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Manifestation of Correlation Effects in the photoemission spectra of Ca$_{1-x}$Sr$_x$RuO$_3$
Authors:
M. Takizawa,
D. Toyota,
H. Wadati,
A. Chikamatsu,
H. Kumigashira,
A. Fujimori,
M. Oshima,
Z. Fang,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have measured soft x-ray photoemission and O 1{\it s} x-ray absorption spectra of Ca$_{1-x}$Sr$_x$RuO$_3$ thin films prepared {\it in situ}. The coherent and incoherent parts have been identified in the bulk component of the photoemission spectra, and spectral weight transfer from the coherent to the incoherent part has been observed with decreasing $x$, namely, with increasing orthorhombic d…
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We have measured soft x-ray photoemission and O 1{\it s} x-ray absorption spectra of Ca$_{1-x}$Sr$_x$RuO$_3$ thin films prepared {\it in situ}. The coherent and incoherent parts have been identified in the bulk component of the photoemission spectra, and spectral weight transfer from the coherent to the incoherent part has been observed with decreasing $x$, namely, with increasing orthorhombic distortion. We propose that, while the Ru 4d one-electron bandwidth does not change with $x$, the distortion and hence the splitting of the $t_{2\text{g}}$ band effectively increases electron correlation strength. Although strong mass enhancement is found in the electronic specific heat data, the coherent part remains wide, suggesting enhanced band narrowing only in the vicinity of {\it E$_{F}$}.
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Submitted 27 December, 2004;
originally announced December 2004.
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Temperature-dependent soft x-ray photoemission and absorption studies of charge disproportionation in La$_{1-x}$Sr$_x$FeO$_3$
Authors:
H. Wadati,
A. Chikamatsu,
R. Hashimoto,
M. Takizawa,
H. Kumigashira,
A. Fujimori,
M. Oshima,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have measured the temperature dependence of the photoemission and x-ray absorption spectra of La$_{1-x}$Sr$_x$FeO$_3$ (LSFO) epitaxial thin films with $x=0.67$, where charge disproportionation ($3{Fe}^{3.67+}\to 2{Fe}^{3+}+ {Fe}^{5+}$) resulting in long-range spin and charge ordering is known to occur below $T_{CD}=190$ K. With decreasing temperature we observed gradual changes of the spectra…
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We have measured the temperature dependence of the photoemission and x-ray absorption spectra of La$_{1-x}$Sr$_x$FeO$_3$ (LSFO) epitaxial thin films with $x=0.67$, where charge disproportionation ($3{Fe}^{3.67+}\to 2{Fe}^{3+}+ {Fe}^{5+}$) resulting in long-range spin and charge ordering is known to occur below $T_{CD}=190$ K. With decreasing temperature we observed gradual changes of the spectra with spectral weight transfer over a wide energy range of $\sim 5$ eV. Above $T_{CD}$ the intensity at the Fermi level ($E_F$) was relatively high compared to that below $T_{CD}$ but still much lower than that in conventional metals. We also found a similar temperature dependence for $x=0.4$, and to a lesser extent for $x=0.2$. These observations suggest that a local charge disproportionation occurs not only in the $x=0.67$ sample below $T_{CD}$ but also over a wider temperature and composition range in LSFO. This implies that the tendency toward charge disproportionation may be the origin of the unusually wide insulating region of the LSFO phase diagram.
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Submitted 8 October, 2004;
originally announced October 2004.
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In situ photoemission study on atomically-controlled La$_{1-x}$Sr$_x$MnO$_3$ thin films: Composition dependence of the electronic structure
Authors:
K. Horiba,
A. Chikamatsu,
H. Kumigashira,
M. Oshima,
N. Nakagawa,
M. Lippmaa,
K. Ono,
M. Kawasaki,
H. Koinuma
Abstract:
We have investigated change in the electronic structures of atomically-controlled La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films as a function of hole-do** level ($x$) in terms of {\it in situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The {\it in situ} PES measurements on a well-ordered surface of high-quality epitaxial LSMO thin films enable us to reve…
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We have investigated change in the electronic structures of atomically-controlled La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films as a function of hole-do** level ($x$) in terms of {\it in situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The {\it in situ} PES measurements on a well-ordered surface of high-quality epitaxial LSMO thin films enable us to reveal their intrinsic electronic structures, especially the structure near the Fermi level ($E_F$). We have found that overall features of valence band as well as the core levels monotonically shifted toward lower binding energy as $x$ was increased, indicating the rigid-band like behavior of underlying electronic structure of LSMO thin films. The peak nearest to $E_F$ due to the $e_g$ orbital is also found to move toward $E_F$ in a rigid-band manner, while the peak intensity decreases with increasing $x$. The loss of spectral weight with $x$ in the occupied density of states was compensated by simultaneous increment of the shoulder structure in O 1$s$ XAS spectra, suggesting the existence of a pseudogap, that is depression in spectral weight at $E_F$, for all metallic compositions. These results indicate that the simple rigid-band model does not describe the electronic structure near $E_F$ of LSMO and that the spectral weight transfer from below to above $E_F$ across the gap dominates the spectral changes with $x$ in LSMO thin films.
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Submitted 14 June, 2004;
originally announced June 2004.
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Nature of Well-Screened State in Hard X-ray Mn 2$p$ Core-Level Photoemission of La$_{1-x}$Sr$_x$MnO$_3$ Films
Authors:
K. Horiba,
M. Taguchi,
A. Chainani,
Y. Takata,
E. Ikenaga,
H. Namatame,
M. Taniguchi,
M. Awaji,
A. Takeuchi,
D. Miwa,
Y. Nishino,
K. Tamasaku,
T. Ishikawa,
H. Kumigashira,
M. Oshima,
M. Lippmaa,
M. Kawasaki,
H. Koinuma,
K. Kobayashi,
S. Shin
Abstract:
Using hard x-ray (HX ; $hν$ = 5.95 keV) synchrotron photoemission spectroscopy (PES), we study the intrinsic electronic structure of La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films. Comparison of Mn 2$p$ core-levels with Soft x-ray (SX ; $hν$ $\sim$ 1000 eV) -PES shows a clear additional well-screened feature only in HX-PES. Take-off-angle dependent data indicate its bulk ($\ge$ 20 Å) character. The d…
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Using hard x-ray (HX ; $hν$ = 5.95 keV) synchrotron photoemission spectroscopy (PES), we study the intrinsic electronic structure of La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films. Comparison of Mn 2$p$ core-levels with Soft x-ray (SX ; $hν$ $\sim$ 1000 eV) -PES shows a clear additional well-screened feature only in HX-PES. Take-off-angle dependent data indicate its bulk ($\ge$ 20 Å) character. The do** and temperature dependence track the ferromagnetism and metallicity of the LSMO series. Cluster model calculations including charge transfer from do** induced states show good agreement, confirming this picture of bulk properties reflected in Mn 2$p$ core-levels using HX-PES.
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Submitted 21 October, 2004; v1 submitted 19 May, 2004;
originally announced May 2004.
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Hole-do**-induced changes in the electronic structure of La$_{1-x}$Sr$_x$FeO$_3$ : soft x-ray photoemission and absorption study of epitaxial thin films
Authors:
H. Wadati,
D. Kobayashi,
H. Kumigashira,
K. Okazaki,
T. Mizokawa,
A. Fujimori,
K. Horiba,
M. Oshima,
N. Hamada,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have studied the electronic structure of epitaxially grown thin films of La$_{1-x}$Sr$_x$FeO$_3$ by {\it in-situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The Fe 2$p$ and valence-band PES spectra and the O $1s$ XAS spectra of LaFeO$_3$ have been successfully reproduced by configuration-interaction cluster-model calculation and, except for the sate…
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We have studied the electronic structure of epitaxially grown thin films of La$_{1-x}$Sr$_x$FeO$_3$ by {\it in-situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The Fe 2$p$ and valence-band PES spectra and the O $1s$ XAS spectra of LaFeO$_3$ have been successfully reproduced by configuration-interaction cluster-model calculation and, except for the satellite structure, by band-structure calculation.From the shift of the binding energies of core levels, the chemical potential was found to be shifted downward as $x$ was increased. Among the three peaks in the valence-band spectra of La$_{1-x}$Sr$_x$FeO$_3$, the peak nearest to the Fermi level ($E_F$), due to the ``$e_{g}$ band'', was found to move toward $E_F$ and became weaker as $x$ was increased, whereas the intensity of the peak just above $E_F$ in the O $1s$ XAS spectra increased with $x$. The gap or pseudogap at $E_F$ was seen for all values of $x$. These results indicate that changes in the spectral line shape around $E_F$ are dominated by spectral weight transfer from below to above $E_F$ across the gap and are therefore highly non-rigid-band-like.
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Submitted 19 April, 2004;
originally announced April 2004.
