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Discovery of charge order and corresponding edge state in kagome magnet FeGe
Authors:
Jia-Xin Yin,
Yu-Xiao Jiang,
Xiaokun Teng,
Md. Shafayat Hossain,
Sougata Mardanya,
Tay-Rong Chang,
Zi** Ye,
Gang Xu,
M. Michael Denner,
Titus Neupert,
Benjamin Lienhard,
Han-Bin Deng,
Chandan Setty,
Qimiao Si,
Guoqing Chang,
Zurab Guguchia,
Bin Gao,
Nana Shumiya,
Qi Zhang,
Tyler A. Cochran,
Daniel Multer,
Ming Yi,
Pengcheng Dai,
M. Zahid Hasan
Abstract:
Kagome materials often host exotic quantum phases, including spin liquids, Chern gap, charge order, and superconductivity. Existing scanning microscopy studies of the kagome charge order have been limited to non-kagome surface layers. Here we tunnel into the kagome lattice of FeGe to uncover features of the charge order. Our spectroscopic imaging identifes a 2x2 charge order in the magnetic kagome…
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Kagome materials often host exotic quantum phases, including spin liquids, Chern gap, charge order, and superconductivity. Existing scanning microscopy studies of the kagome charge order have been limited to non-kagome surface layers. Here we tunnel into the kagome lattice of FeGe to uncover features of the charge order. Our spectroscopic imaging identifes a 2x2 charge order in the magnetic kagome lattice, resembling that discovered in kagome superconductors. Spin-map** across steps of unit-cell-height demonstrates that this charge order emerges from spin-polarized electrons with an antiferromagnetic stacking order. We further uncover the correlation between antiferromagnetism and charge order anisotropy, highlighting the unusual magnetic coupling of the charge order. Finally, we detect a pronounced edge state within the charge order energy gap, which is robust against the irregular shape of the kagome lattice edges. We discuss our results with the theoretically considered topological features of the kagome charge order including orbital magnetism and bulk-boundary correspondence.
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Submitted 1 November, 2022; v1 submitted 3 March, 2022;
originally announced March 2022.
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Transform-limited photons from a coherent tin-vacancy spin in diamond
Authors:
Matthew E. Trusheim,
Benjamin **ault,
Noel H Wan,
Mustafa Gundogan,
Lorenzo De Santis,
Romain Debroux,
Dorian Gangloff,
Carola Purser,
Kevin C. Chen,
Michael Walsh,
Joshua J. Rose,
Jonas N. Becker,
Benjamin Lienhard,
Eric Bersin,
Ioannis Paradeisanos,
Gang Wang,
Dominika Lyzwa,
Alejandro R-P. Montblanch,
Girish Malladi,
Hassaram Bakhru,
Andrea C. Ferrari,
Ian Walmsley,
Mete Atature,
Dirk Englund
Abstract:
Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving an…
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Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flip** transitions, characterize transition linewidths, measure electron spin lifetimes and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phononlimited with an exponential temperature scaling leading to $T_1$ $>$ 10 ms, and the coherence time, $T_2$ reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.
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Submitted 6 January, 2020; v1 submitted 19 November, 2018;
originally announced November 2018.
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Lead-Related Quantum Emitters in Diamond
Authors:
Matthew E. Trusheim,
Noel H. Wan,
Kevin C. Chen,
Christopher J. Ciccarino,
Ravishankar Sundararaman,
Girish Malladi,
Eric Bersin,
Michael Walsh,
Benjamin Lienhard,
Hassaram Bakhru,
Prineha Narang,
Dirk Englund
Abstract:
We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several tra…
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We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several transitions, including a prominent doublet near 520 nm. The splitting of this doublet, 2 THz, exceeds that reported for other group-IV centers. These observations are consistent with the PbV center, which is expected to have the combination of narrow optical transitions and stable spin states, making it a promising system for quantum network nodes.
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Submitted 30 May, 2018;
originally announced May 2018.
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Tunable and high purity room-temperature single photon emission from atomic defects in hexagonal boron nitride
Authors:
Gabriele Grosso,
Hyowon Moon,
Benjamin Lienhard,
Sajid Ali,
Dmitri K. Efetov,
Marco M. Furchi,
Pablo Jarillo-Herrero,
Michael J. Ford,
Igor Aharonovich,
Dirk Englund
Abstract:
Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission…
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Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single-photon purity. We report high single photon count rates exceeding 10^7 counts/sec at saturation, which is the highest single photon detection rate for room-temperature single photon emitters, to our knowledge. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.
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Submitted 10 November, 2016;
originally announced November 2016.
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Bright and photostable single-photon emitter in silicon carbide
Authors:
Benjamin Lienhard,
Tim Schröder,
Sara Mouradian,
Florian Dolde,
Toan Trong Tran,
Igor Aharonovich,
Dirk R. Englund
Abstract:
Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at…
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Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling photon counts per second in excess of 2$\times$10$^6$ from unpatterned bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low-temperature measurements reveal a narrow zero phonon line (linewidth $<0.1~$nm) that accounts for $>30$% of the total photoluminescence spectrum.
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Submitted 24 February, 2021; v1 submitted 17 March, 2016;
originally announced March 2016.
