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A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots
Authors:
Ming Ni,
Rong-Long Ma,
Zhen-Zhen Kong,
Ning Chu,
Sheng-Kai Zhu,
Chu Wang,
Ao-Ran Li,
Wei-Zhu Liao,
Gang Cao,
Gui-Lei Wang,
Guang-Can Guo,
Xuedong Hu,
Hai-Ou Li,
Guo-** Guo
Abstract:
To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. However, for spin qubits in semiconductor quantum dots, the common two-qubit operations, including CPhase gates, SWAP gates, and CROT gates, are realized with distinct parameter regions and control waveforms, posing challenges…
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To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. However, for spin qubits in semiconductor quantum dots, the common two-qubit operations, including CPhase gates, SWAP gates, and CROT gates, are realized with distinct parameter regions and control waveforms, posing challenges for their simultaneous implementation. Here, taking advantage of the inherent Heisenberg interaction between spin qubits, we propose and verify a fast composite two-qubit gate scheme to extend the available two-qubit gate types as well as reduce the requirements for device properties. Apart from the formerly proposed CPhase (controlled-phase) gates and SWAP gates, theoretical results indicate that the iSWAP-family gate and Fermionic simulation (fSim) gate set are additionally available for spin qubits. Meanwhile, our gate scheme limits the parameter requirements of all essential two-qubit gates to a common J~ΔE_Z region, facilitate the simultaneous realization of them. Furthermore, we present the preliminary experimental demonstration of the composite gate scheme, observing excellent match between the measured and simulated results. With this versatile composite gate scheme, broad-spectrum two-qubit operations allow us to efficiently utilize the hardware and the underlying physics resources, hel** accelerate and broaden the scope of the upcoming noise intermediate-scale quantum (NISQ) computing.
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Submitted 29 April, 2024;
originally announced April 2024.
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Tailoring Interlayer Chiral Exchange by Azimuthal Symmetry Engineering
Authors:
Yu-Hao Huang,
Jui-Hsu Han,
Wei-Bang Liao,
Chen-Yu Hu,
Yan-Ting Liu,
Chi-Feng Pai
Abstract:
Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) has sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to mediate long-range chiral spin textures. So far, experimental reports focused on the observation of interlayer DMI, leaving the development of strategies to contro…
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Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) has sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to mediate long-range chiral spin textures. So far, experimental reports focused on the observation of interlayer DMI, leaving the development of strategies to control interlayer DMI's magnitude unaddressed. Here, we introduce an azimuthal symmetry engineering protocol capable of additive/subtractive tuning of interlayer DMI through the control of wedge deposition of separate layers, and demonstrate its capability to mediate field-free spin-orbit torque (SOT) magnetization switching in both orthogonally magnetized and synthetic antiferromagnetically coupled systems. Furthermore, we showcase the spatial inhomogeneity brought about by wedge depositon can be suppressed by specific azimuthal engineering design, ideal for practical implementation. Our findings provide guidelines for effective manipulations of interlayer DMI strength, beneficial for future design of SOT-MRAM or other spintronic devices utilizing interlayer DMI.
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Submitted 25 December, 2023; v1 submitted 22 December, 2023;
originally announced December 2023.
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A SWAP Gate for Spin Qubits in Silicon
Authors:
Ming Ni,
Rong-Long Ma,
Zhen-Zhen Kong,
Xiao Xue,
Sheng-Kai Zhu,
Chu Wang,
Ao-Ran Li,
Ning Chu,
Wei-Zhu Liao,
Gang Cao,
Gui-Lei Wang,
Guang-Can Guo,
Xuedong Hu,
Hong-Wen Jiang,
Hai-Ou Li,
Guo-** Guo
Abstract:
With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in silicon, how to scale up the architecture and make large arrays of spin qubits become the more pressing challenges. In a scaled-up structure, qubit-to-qubit connectivity has crucial impact on gate counts of quantum error correction and general quantum algorithms. In our toolbox of quantum gates for…
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With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in silicon, how to scale up the architecture and make large arrays of spin qubits become the more pressing challenges. In a scaled-up structure, qubit-to-qubit connectivity has crucial impact on gate counts of quantum error correction and general quantum algorithms. In our toolbox of quantum gates for spin qubits, SWAP gate is quite versatile: it can help solve the connectivity problem by realizing both short- and long-range spin state transfer, and act as a basic two-qubit gate, which can reduce quantum circuit depth when combined with other two-qubit gates. However, for spin qubits in silicon quantum dots, high fidelity SWAP gates have not been demonstrated due to the requirements of large circuit bandwidth and a highly adjustable ratio between the strength of the exchange coupling J and the Zeeman energy difference Delta E_z. Here we demonstrate a fast SWAP gate with a duration of ~25 ns based on quantum dots in isotopically enriched silicon, with a highly adjustable ratio between J and Delta E_z, for over two orders of magnitude in our device. We are also able to calibrate the single-qubit local phases during the SWAP gate by incorporating single-qubit gates in our circuit. By independently reading out the qubits, we probe the anti-correlations between the two spins, estimate the operation fidelity and analyze the dominant error sources for our SWAP gate. These results pave the way for high fidelity SWAP gates, and processes based on them, such as quantum communication on chip and quantum simulation by engineering the Heisenberg Hamiltonian in silicon.
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Submitted 10 October, 2023;
originally announced October 2023.
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Single spin qubit geometric gate in a silicon quantum dot
Authors:
Rong-Long Ma,
Ao-Ran Li,
Chu Wang,
Zhen-Zhen Kong,
Wei-Zhu Liao,
Ming Ni,
Sheng-Kai Zhu,
Ning Chu,
Cheng-Xian Zhang,
Di Liu,
Gang Cao,
Gui-Lei Wang,
Hai-Ou Li,
Guo-** Guo
Abstract:
Preserving qubit coherence and maintaining high-fidelity qubit control under complex noise environment is an enduring challenge for scalable quantum computing. Here we demonstrate an addressable fault-tolerant single spin qubit with an average control fidelity of 99.12% via randomized benchmarking on a silicon quantum dot device with an integrated micromagnet. Its dephasing time T2* is 1.025 us an…
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Preserving qubit coherence and maintaining high-fidelity qubit control under complex noise environment is an enduring challenge for scalable quantum computing. Here we demonstrate an addressable fault-tolerant single spin qubit with an average control fidelity of 99.12% via randomized benchmarking on a silicon quantum dot device with an integrated micromagnet. Its dephasing time T2* is 1.025 us and can be enlarged to 264 us by using the Hahn echo technique, reflecting strong low-frequency noise in our system. To break through the noise limitation, we introduce geometric quantum computing to obtain high control fidelity by exploiting its noise-resilient feature. However, the control fidelities of the geometric quantum gates are lower than 99%. According to our simulation, the noise-resilient feature of geometric quantum gates is masked by the heating effect. With further optimization to alleviate the heating effect, geometric quantum computing can be a potential approach to reproducibly achieving high-fidelity qubit control in a complex noise environment.
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Submitted 10 October, 2023;
originally announced October 2023.
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Correcting on-chip distortion of control pulses with silicon spin qubits
Authors:
Ming Ni,
Rong-Long Ma,
Zhen-Zhen Kong,
Ning Chu,
Wei-Zhu Liao,
Sheng-Kai Zhu,
Chu Wang,
Gang Luo,
Di Liu,
Gang Cao,
Gui-Lei Wang,
Hai-Ou Li,
Guo-** Guo
Abstract:
Pulse distortion, as one of the coherent error sources, hinders the characterization and control of qubits. In the semiconductor quantum dot system, the distortions on measurement pulses and control pulses disturb the experimental results, while no effective calibration procedure has yet been reported. Here, we demonstrate two different calibration methods to calibrate and correct the distortion u…
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Pulse distortion, as one of the coherent error sources, hinders the characterization and control of qubits. In the semiconductor quantum dot system, the distortions on measurement pulses and control pulses disturb the experimental results, while no effective calibration procedure has yet been reported. Here, we demonstrate two different calibration methods to calibrate and correct the distortion using the two-qubit system as a detector. The two calibration methods have different correction accuracy and complexity. One is the coarse predistortion (CPD) method, with which the distortion is partly relieved. The other method is the all predistortion (APD) method, with which we measure the transfer function and significantly improve the exchange oscillation homogeneity. The two methods use the exchange oscillation homogeneity as the metric and are appropriate for any qubit that oscillates with a diabatic pulse. With the APD procedure, an arbitrary control waveform can be accurately delivered to the device, which is essential for characterizing qubits and improving gate fidelity.
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Submitted 18 September, 2023;
originally announced September 2023.
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Theoretical model of confined thermoviscous flows for artificial cytoplasmic streaming
Authors:
Weida Liao,
Elena Erben,
Moritz Kreysing,
Eric Lauga
Abstract:
Recent experiments in cell biology have probed the impact of artificially-induced intracellular flows in the spatiotemporal organisation of cells and organisms. In these experiments, mild dynamical heating via focused infrared light from a laser leads to long-range, thermoviscous flows of the cytoplasm inside a cell, a method popularised in cell biology as FLUCS (focused-light-induced cytoplasmic…
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Recent experiments in cell biology have probed the impact of artificially-induced intracellular flows in the spatiotemporal organisation of cells and organisms. In these experiments, mild dynamical heating via focused infrared light from a laser leads to long-range, thermoviscous flows of the cytoplasm inside a cell, a method popularised in cell biology as FLUCS (focused-light-induced cytoplasmic streaming). Here, we present a fully analytical, theoretical model describing the fluid flow and transport of tracers induced by the laser at all length scales in two-dimensional confinement. The focused light causes a small, local temperature change, which in turn results in a small change in the density and viscosity of the fluid locally. We analytically solve for the instantaneous flow field due to the translation of a heat spot of arbitrary time-dependent amplitude along a scan path. We show that the leading-order instantaneous flow results purely from thermal expansion. It is proportional to the magnitude of the temperature perturbation, with far-field behaviour typically dominated by a source or sink flow and proportional to the rate of change of the heat-spot amplitude. In contrast, and in agreement with experimental measurements, the net displacement of a tracer due to a full scan of the heat spot is quadratic in the heat-spot amplitude, as it results from the interplay of thermal expansion and thermal viscosity changes. The corresponding average velocity of tracers over a scan is a hydrodynamic source dipole in the far field, with direction dependent on the relative importance of thermal expansion and thermal viscosity changes. Our quantitative findings show excellent agreement with recent experimental results and will enable the design of new controlled experiments to establish the physiological role of physical transport processes inside cells.
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Submitted 6 March, 2023;
originally announced March 2023.
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Flop**-mode spin qubit in a Si-MOS quantum dot
Authors:
Rui-Zi Hu,
Rong-Long Ma,
Ming Ni,
Yuan Zhou,
Ning Chu,
Wei-Zhu Liao,
Zhen-Zhen Kong,
Gang Cao,
Gui-Lei Wang,
Hai-Ou Li,
Guo-** Guo
Abstract:
Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flop**-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate…
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Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flop**-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flop**-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.
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Submitted 22 March, 2023; v1 submitted 28 September, 2022;
originally announced September 2022.
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Growth-dependent Interlayer Chiral Exchange and Field-free Switching
Authors:
Yu-Hao Huang,
Chao-Chung Huang,
Wei-Bang Liao,
Tian-Yue Chen,
Chi-Feng Pai
Abstract:
Interfacial Dzyaloshinskii-Moriya interaction (DMI) has long been observed in normal metal/ferromagnetic multilayers, enabling the formation of chiral domain walls, skyrmions and other 2D antisymmetric spin textures confined within a single ferromagnetic layer, while more recent works on interlayer DMI reveal new pathways in realizing novel chiral 3D spin textures between two separate layers.Here,…
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Interfacial Dzyaloshinskii-Moriya interaction (DMI) has long been observed in normal metal/ferromagnetic multilayers, enabling the formation of chiral domain walls, skyrmions and other 2D antisymmetric spin textures confined within a single ferromagnetic layer, while more recent works on interlayer DMI reveal new pathways in realizing novel chiral 3D spin textures between two separate layers.Here, we report on interlayer DMI between two orthogonally magnetized ferromagnetic layers (CoFeB/Co) mediated by a Pt layer, and confirm the chiral nature of the observed effective field of up to 37 Oe through asymmetric hysteresis loops under in-plane field.We highlight the importance of growth-induced in-plane symmetry breaking, resulting in a sizable interlayer DMI and a universal characteristic vector through wedge deposition of the samples.We further perform deterministic current-driven magnetization switching in the perpendicularly magnetized Co layer utilizing solely the effective field from the interlayer DMI.These results demonstrate the potential of interlayer DMI in facilitating deterministic field-free switching in spin memory applications.
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Submitted 8 August, 2022;
originally announced August 2022.
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Deep Learning for Spin-Orbit Torque Characterizations with a Projected Vector Field Magnet
Authors:
Chao-Chung Huang,
Chia-Chin Tsai,
Wei-Bang Liao,
Tian-Yue Chen,
Chi-Feng Pai
Abstract:
Spin-orbit torque characterizations on magnetic heterostructures with perpendicular anisotropy are demonstrated on a projected vector field magnet via hysteresis loop shift measurement and harmonic Hall measurement with planar Hall correction. Accurate magnetic field calibration of the vector magnet is realized with the help of deep learning models, which are able to capture the nonlinear behavior…
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Spin-orbit torque characterizations on magnetic heterostructures with perpendicular anisotropy are demonstrated on a projected vector field magnet via hysteresis loop shift measurement and harmonic Hall measurement with planar Hall correction. Accurate magnetic field calibration of the vector magnet is realized with the help of deep learning models, which are able to capture the nonlinear behavior between the generated magnetic field and the currents applied to the magnet. The trained models can successfully predict the applied current combinations under the circumstances of magnetic field scans, angle scans, and hysteresis loop shift measurements. The validity of the models is further verified, complemented by the comparison of the spin-orbit torque characterization results obtained from the deep-learning-trained vector magnet system with those obtained from a conventional setup comprised of two separated electromagnets. The dam**-like spin-orbit torque (DL-SOT) efficiencies (|$ξ_{DL}$|) extracted from the vector magnet and the traditional measurement configuration are consistent, where |$ξ_{DL}$| $\approx$ 0.22 for amorphous W and |$ξ_{DL}$| $\approx$ 0.02 for $α$-W. Our work provides an advanced method to meticulously control a vector magnet and to conveniently perform various spin-orbit torque characterizations.
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Submitted 29 June, 2022;
originally announced June 2022.
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Tailoring neuromorphic switching by CuNx-mediated orbital currents
Authors:
Tian-Yue Chen,
Yu-Chan Hsiao,
Wei-Bang Liao,
Chi-Feng Pai
Abstract:
Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the spin-orbit coupling (SOC)-induced spin Hall effect (SHE) and/or the spin Rashba-Edelstein effect (SREE). Recently, SOC-free mechanisms such as the orbital angular mo…
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Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the spin-orbit coupling (SOC)-induced spin Hall effect (SHE) and/or the spin Rashba-Edelstein effect (SREE). Recently, SOC-free mechanisms such as the orbital angular momentum (OAM)-induced orbital Hall effect (OHE) and/or the orbital Rashba-Edelstein effect (OREE) have been proposed to generate sizable torques comparable to those from the conventional spin Hall mechanism. In this work, we show that the orbital current can be effectively generated by the nitrided light metal Cu. The overall dam**-like SOT efficiency, which consists of both the spin and the orbital current contributions, can be tailored from ~ 0.06 to 0.4 in a Pt/Co/CuNx magnetic heterostructure by tuning the nitrogen do** concentration. Current-induced magnetization switching further verifies the efficacy of such orbital current with a critical switching current density as low as Jc ~ 5 x 10^10 A/m2. Most importantly, the orbital-current-mediated memristive switching behavior can be observed in such heterostructures, which reveals that the gigantic SOT and efficient magnetization switching are the tradeoffs for the applicable window of memristive switching. Our work provides insights into the role of orbital current might play in SOT neuromorphic devices and paves a new route for making energy-efficient spin-orbitronic devices.
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Submitted 30 May, 2022; v1 submitted 20 April, 2022;
originally announced April 2022.
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Symmetry effects on the static and dynamic properties of coupled magnetic oscillators
Authors:
J P. Patchett,
M. Drouhin,
J. W. Liao,
Z. Soban,
D. Petit,
J. Haigh,
P. Roy,
J. Wunderlich,
R. P. Cowburn,
C. Ciccarelli
Abstract:
The effect of symmetry on the resonance spectra of antiferromagnetically coupled oscillators has attracted new interest with the discovery of symmetry-breaking induced anti-crossings. Here, we experimentally characterise the resonance spectrum of a synthetic antiferromagnet Pt/CoFeB/Ru/CoFeB/Pt, where we are able to independently tune the effective magnetisation of the two coupled magnets. To mode…
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The effect of symmetry on the resonance spectra of antiferromagnetically coupled oscillators has attracted new interest with the discovery of symmetry-breaking induced anti-crossings. Here, we experimentally characterise the resonance spectrum of a synthetic antiferromagnet Pt/CoFeB/Ru/CoFeB/Pt, where we are able to independently tune the effective magnetisation of the two coupled magnets. To model our results we apply the mathematical methods of group theory to the solutions of the Landau Lifshitz Gilbert equation. This general approach, usually applied to quantum mechanical systems, allows us to identify the main features of the resonance spectrum in terms of symmetry breaking and to make a direct comparison with crystal antiferromagnets.
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Submitted 17 March, 2022;
originally announced April 2022.
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Microstructure and phase transformation of nickel-titanium shape memory alloy fabricated by directed energy deposition with in-situ heat treatment
Authors:
Shiming Gao,
Ojo Philip Bodunde,
Mian Qin,
Wei-Hsin Liao,
** Guo
Abstract:
Additive manufacturing has been vastly applied to fabricate various structures of nickel-titanium (NiTi) shape memory alloys due to its flexibility to create complex structures with minimal defects. However, the microstructure heterogeneity and secondary phase formation are two main problems that impede the further application of NiTi alloys. Although post-heat treatment is usually adopted to impr…
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Additive manufacturing has been vastly applied to fabricate various structures of nickel-titanium (NiTi) shape memory alloys due to its flexibility to create complex structures with minimal defects. However, the microstructure heterogeneity and secondary phase formation are two main problems that impede the further application of NiTi alloys. Although post-heat treatment is usually adopted to improve or manipulate NiTi alloy properties, it cannot realize the spatial control of thermal and/or mechanical properties of NiTi alloys. To overcome the limitations of uniform post-heat treatment, this study proposes an in-situ heat treatment strategy that is integrated into the directed energy deposition of NiTi alloys. The proposed method will potentially lead to new manufacturing capabilities to achieve location-dependent performance or property manipulation. The influences of in-situ heat treatment on the thermal and mechanical properties of printed NiTi structures were investigated. The investigations were carried out in terms of thermal cycling, microstructure evolution, and mechanical properties by 3D finite element simulations and experimental characterizations. A low-power laser beam was adopted to localize the in-situ heat treatment only to the current printed layer, facilitating a reverse peritectic reaction and a transient high solution treatment successively. The proposed in-situ heat treatment on the specimen results in a more obvious phase transformation peak in the differential scanning calorimetry curves, about 50%~70% volume reduction for the Ti2Ni phase, and approximately 35 HV reduction on microhardness.
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Submitted 18 February, 2022;
originally announced February 2022.
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Molten pool characteristics of a nickel-titanium shape memory alloy for directed energy deposition
Authors:
Shiming Gao,
Yuncong Feng,
Jianjian Wang,
Mian Qin,
Ojo Philip Bodunde,
Wei-Hsin Liao,
** Guo
Abstract:
Fabrication of nickel-titanium shape memory alloy through additive manufacturing has attracted increasing interest due to its advantages of flexible manufacturing capability, low-cost customization, and minimal defects. The process parameters in directed energy deposition (DED) have a crucial impact on its molten pool characteristics (geometry, microstructure, etc.), thus influencing the final pro…
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Fabrication of nickel-titanium shape memory alloy through additive manufacturing has attracted increasing interest due to its advantages of flexible manufacturing capability, low-cost customization, and minimal defects. The process parameters in directed energy deposition (DED) have a crucial impact on its molten pool characteristics (geometry, microstructure, etc.), thus influencing the final properties of shape memory effect and pseudoelasticity. In this paper, a three-dimensional numerical model considering heat transfer, phase change, and fluid flow has been developed to simulate the cladding geometry, melt pool depth, and deposition rate. The experimental and simulated results indicated that laser power plays a critical role in determining the melt pool width and deposition rate while scan speed and powder feed rate have less effect on cladding geometry and deposition rate. The fluid velocity has a huge influence on the distribution of elements in the molten pool. The temperature gradient G, solidification rate R, as well as shape factor G/R were calculated to illustrate the underlying mechanisms of grain structure evolution. The grain morphology distribution of cross-section from the experimental samples agreed well with the simulation results. The model reported in this paper is expected to shed light on the optimization of the deposition process and grain structure prediction.
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Submitted 3 October, 2021;
originally announced October 2021.
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Spatial characteristics of nickel-titanium shape memory alloy fabricated by continuous directed energy deposition
Authors:
Shiming Gao,
Fei Weng,
Ojo Philip Bodunde,
Mian Qin,
Wei-Hsin Liao,
** Guo
Abstract:
Additive manufacturing has been adopted to process nickel-titanium shape memory alloys due to its advantages of flexibility and minimal defects. The current layer-by-layer method is accompanied by a complex temperature history, which is not beneficial to the final characteristics of shape memory alloys. In this study, a continuous directed energy deposition method has been proposed to improve micr…
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Additive manufacturing has been adopted to process nickel-titanium shape memory alloys due to its advantages of flexibility and minimal defects. The current layer-by-layer method is accompanied by a complex temperature history, which is not beneficial to the final characteristics of shape memory alloys. In this study, a continuous directed energy deposition method has been proposed to improve microstructure uniformity. The spatial characterization of nickel-titanium shape memory alloy fabricated by continuous directed energy deposition is investigated to study the temperature history, phase constituent, microstructure, and mechanical properties. The results indicate that the fabricated specimen has a monotonic temperature history, relatively uniform phase distribution and microstructure morphology, as well as high compressive strength (2982 MPa~3105 MPa) and strain (37.7%~41.1%). The reported method is expected to lay the foundation for spatial control during the printing of functional structures.
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Submitted 3 October, 2021;
originally announced October 2021.
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Realization of A Non-Markov Chain in A Single 2D Crystal RRAM
Authors:
Rongjie Zhang,
Wenjun Chen,
Changjiu Teng,
Wugang Liao,
Bilu Liu,
Hui-Ming Cheng
Abstract:
The non-Markov processes widely exist in thermodymanic processes, while it usually requires packing of many transistors and memories with great system complexity in traditional device architecture to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices show potential for next-generation computing systems with much-reduced complexity. Here, we achi…
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The non-Markov processes widely exist in thermodymanic processes, while it usually requires packing of many transistors and memories with great system complexity in traditional device architecture to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices show potential for next-generation computing systems with much-reduced complexity. Here, we achieve the non-Markov chain in an individual RRAM device based on 2D mica with a vertical metal/mica/metal structure. We find that the internal potassium ions (K+) in 2D mica gradually move along the direction of the applied electric field, making the initially insulating mica conductive. The accumulation of K+ is tuned by electrical field, and the 2D-mica RRAM possesses both unipolar and bipolar memory windows, high on/off ratio, decent stability and repeatability.Importantly, the non-Markov chain algorithm is established for the first time in a single RRAM, in which the movement of K+ is dependent on the stimulated voltage as well as their past states. This work not only uncovers the inner ionic conductivity of 2D mica, but also opens the door for such novel RRAM devices with numerous functions and applications.
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Submitted 30 August, 2021;
originally announced August 2021.
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Efficient Spin-Orbit Torque Generation in Semiconducting WTe2 with Hop** Transport
Authors:
Cheng-Wei Peng,
Wei-Bang Liao,
Tian-Yue Chen,
Chi-Feng Pai
Abstract:
Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied crystalline TMDs are prepared by mechanical exfoliation, which limits their potentials for industrial applications. Here we show that amorphous WTe2 heterostructures de…
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Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied crystalline TMDs are prepared by mechanical exfoliation, which limits their potentials for industrial applications. Here we show that amorphous WTe2 heterostructures deposited by magnetron sputtering possess a sizable dam**-like SOT efficiency ξ_DL^WTe2 ~ 0.20 and low dam** constant α = 0.009/pm0.001. Only an extremely low critical switching current density J_c ~ 7.05\times10^9 A/m^2 is required to achieve SOT-driven magnetization switching. The SOT efficiency is further proved to depend on the W and Te relative compositions in the co-sputtered W_100-xTe_x samples, from which a sign change of ξ_DL^WTe2 is observed. Besides, the electronic transport in amorphous WTe2 is found to be semiconducting and is governed by a hop** mechanism. With the above advantages and rich tunability, amorphous and semiconducting WTe2 serves as a unique SOT source for future spintronics applications.
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Submitted 15 January, 2021;
originally announced January 2021.
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Energetics of synchronisation for model flagella and cilia
Authors:
Weida Liao,
Eric Lauga
Abstract:
Synchronisation is often observed in the swimming of flagellated cells, either for multiple appendages on the same organism or between the flagella of nearby cells. Beating cilia are also seen to synchronise their dynamics. In 1951, Taylor showed that the observed in-phase beating of the flagella of co-swimming spermatozoa was consistent with minimisation of the energy dissipated in the surroundin…
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Synchronisation is often observed in the swimming of flagellated cells, either for multiple appendages on the same organism or between the flagella of nearby cells. Beating cilia are also seen to synchronise their dynamics. In 1951, Taylor showed that the observed in-phase beating of the flagella of co-swimming spermatozoa was consistent with minimisation of the energy dissipated in the surrounding fluid. Here we revisit Taylor's hypothesis for three models of flagella and cilia: (1) Taylor's waving sheets with both longitudinal and transverse modes, as relevant for flexible flagella; (2) spheres orbiting above a no-slip surface to model interacting flexible cilia; and (3) whirling rods above a no-slip surface to address the interaction of nodal cilia. By calculating the flow fields explicitly, we show that the rate of working of the model flagella or cilia is minimised in our three models for (1) a phase difference depending on the separation of the sheets and precise waving kinematics; (2) in-phase or opposite-phase motion depending on the relative position and orientation of the spheres; and (3) in-phase whirling of the rods. These results will be useful in future models probing the dynamics of synchronisation in these setups.
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Submitted 14 January, 2021;
originally announced January 2021.
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Pulse-width and Temperature Dependence of Memristive Spin-Orbit Torque Switching
Authors:
Wei-Bang Liao,
Tian-Yue Chen,
Yu-Chan Hsiao,
Chi-Feng Pai
Abstract:
It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices. However, most previous studies on various types of magnetic heterostructures have focused on only their SOT efficiencies, whereas the thermal stabilities therei…
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It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices. However, most previous studies on various types of magnetic heterostructures have focused on only their SOT efficiencies, whereas the thermal stabilities therein have been largely ignored. In this work, we study the temperature-dependent SOT and stability properties of two types of W-based heterostructures, namely W/CoFeB/MgO (standard) and CoFeB/W/CoFeB/MgO (field-free), from 25 ^{\circ}C (298 K) to 80 ^{\circ}C (353 K). Via temperature-dependent SOT characterization, the SOT efficacies for both systems are found to be invariant within the range of studied temperatures. Temperature-dependent current-induced SOT switching measurements further show that the critical switching current densities decrease with respect to the ambient temperature; thermal stability factors (Δ) are also found to degrade as temperature increases for both standard and field-free systems. The memristive SOT switching behaviors in both systems with various pulse-widths and temperatures are also examined. Our results suggest that although the SOT efficacy is robust against thermal effects, the reduction of Δ at elevated temperatures could be detrimental to standard memory as well as neuromorphic (memristive) device applications.
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Submitted 10 December, 2020;
originally announced December 2020.
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Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures
Authors:
Tian-Yue Chen,
Cheng-Wei Peng,
Tsung-Yu Tsai,
Wei-Bang Liao,
Chun-Te Wu,
Hung-Wei Yen,
Chi-Feng Pai
Abstract:
The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of…
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The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial Bi$_{x}$Te$_{1-x}$/ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the dam**-like SOT efficiencies originated from the bulk spin-orbit interactions of such non-epitaxial heterostructures can reach values greater than 100% at room temperature. We further demonstrate current-induced SOT switching in these Bi$_{x}$Te$_{1-x}$-based heterostructures with thermally stable ferromagnetic layers, which indicates that such non-epitaxial chalcogenide materials can be potential efficient SOT sources in future SOT magnetic memory devices.
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Submitted 28 January, 2020; v1 submitted 2 November, 2019;
originally announced November 2019.
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Field-free spin-orbit torque switching through domain wall motion
Authors:
Neil Murray,
Wei-Bang Liao,
Ting-Chien Wang,
Liang-Juan Chang,
Li-Zai Tsai,
Tsung-Yu Tsai,
Shang-Fan Lee,
Chi-Feng Pai
Abstract:
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires an externally-applied in-plane field to break the switching symmetry. We show that by inserting an in-plane magnetized ferromagnetic layer CoFeB underneath the…
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Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires an externally-applied in-plane field to break the switching symmetry. We show that by inserting an in-plane magnetized ferromagnetic layer CoFeB underneath the conventional W/CoFeB/MgO SOT heterostructure, deterministic SOT switching of the perpendicularly-magnetized top CoFeB layer can be realized without the need of in-plane bias field. Kerr imaging study further unveils that the observed switching is mainly dominated by domain nucleation and domain wall motion, which might limit the potentiality of using this type of multilayer stack design for nanoscale SOT-MRAM application. Comparison of the experimental switching behavior with micromagnetic simulations reveals that the deterministic switching in our devices cannot be explained by the stray field contribution of the in-plane magnetized layer, and the roughness-caused Néel coupling effect might play a more important role in achieving the observed field-free deterministic switching.
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Submitted 20 September, 2019;
originally announced September 2019.
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Current-Induced magnetization switching by the high spin Hall conductivity $α$-W
Authors:
Wei-Bang Liao,
Tian-Yue Chen,
Yari Ferrante,
Stuart S. P. Parkin,
Chi-Feng Pai
Abstract:
The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to conventional spin-transfer torque for controlling next-generation magnetic memories. Among all 5d transition metals, W in its resistive amorphous phase typically show…
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The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to conventional spin-transfer torque for controlling next-generation magnetic memories. Among all 5d transition metals, W in its resistive amorphous phase typically shows the largest spin-orbit torque efficiency ~ 0.20-0.50. In contrast, its conductive and crystalline $α$ phase possesses a significantly smaller efficiency ~ 0.03 and no spin-orbit torque switching has yet been realized using $α$-W thin films as the spin Hall source. In this work, through a comprehensive study of high quality W/CoFeB/MgO and the reversed MgO/CoFeB/W magnetic heterostructures, we show that although amorphous-W has a greater spin-orbit torque efficiency, the spin Hall conductivity of $α$-W ($|σ_{\operatorname{SH}}^{α\operatorname{-W}}|=3.71\times10^{5}\operatornameΩ^{-1}\operatorname{m}^{-1}$) is ~3.5 times larger than that of amorphous-W ($|σ_{\operatorname{SH}}^{\operatorname{amorphous-W}}|=1.05\times10^{5}\operatornameΩ^{-1}\operatorname{m}^{-1}$). Moreover, we demonstrate spin-orbit torque driven magnetization switching using a MgO/CoFeB/$α$-W heterostructure. Our findings suggest that the conductive and high spin Hall conductivity $α$-W can be a potential candidate for future low power consumption spin-orbit torque memory applications.
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Submitted 14 July, 2019;
originally announced July 2019.
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Even-odd dependent optical transitions of zigzag monolayer black phosphorus nanoribbons
Authors:
Pu Liu,
Xianzhe Zhu,
Xiaoying Zhou,
Benliang Zhou,
Wenhu Liao,
Guanghui Zhou,
Kai Chang
Abstract:
We analytically study the electronic structures and optical properties of zigzag-edged black phosphorene nanoribbons (ZPNRs) utilizing the tight-binding (TB) Hamiltonian and Kubo formula. By solving the discrete Schordinger equation directly, we obtain the energy spectra and wavefunctions for a $N$-ZPNR with $N$ number of transverse zigzag atomic chains, and classify the eigenstates according to t…
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We analytically study the electronic structures and optical properties of zigzag-edged black phosphorene nanoribbons (ZPNRs) utilizing the tight-binding (TB) Hamiltonian and Kubo formula. By solving the discrete Schordinger equation directly, we obtain the energy spectra and wavefunctions for a $N$-ZPNR with $N$ number of transverse zigzag atomic chains, and classify the eigenstates according to the lattice symmetry. We then obtain the optical transition selection rule of ZPNRs based on the symmetry analysis and the analytical expressions of the optical transition matrix elements. Under an incident light linearly-polarized along the ribbon, importantly, we find that the optical transition selection rule for the $N$-ZPNR with even- or odd-$N$ is qualitatively different. In specification, for even-$N$ ZPNRs the inter- (intra-) band selection rule is $Δn=$odd (even), since the parity of the wavefunction corresponding to the $n$th subband in the conduction (valence) band is $(-1)^{n}[(-1)^{(n+1)}]$ due to the presence of the $C_{2x}$ symmetry. In contrast, all optical transitions are possible among all subbands due to the absence of the $C_{2x}$ symmetry. Our findings provide a further understanding on the electronic states and optical properties of ZPNRs, which are useful in the explanation of the optical experiment data on ZPNR samples.
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Submitted 10 March, 2019;
originally announced March 2019.
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The current-induced spin-orbit torque and field-free switching from Mo-based magnetic heterostructures
Authors:
Tian-Yue Chen,
Hsin-I Chan,
Wei-Bang Liao,
Chi-Feng Pai
Abstract:
Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dam**like spin-orbit torque (SOT) efficiency of Mo/CoFeB/MgO heterostructure is $ξ_{DL}\approx -0.003\pm 0.001$ and fairly independent of the annealing temperature from 300$^\circ$C to 400$^\circ$C. Though…
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Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dam**like spin-orbit torque (SOT) efficiency of Mo/CoFeB/MgO heterostructure is $ξ_{DL}\approx -0.003\pm 0.001$ and fairly independent of the annealing temperature from 300$^\circ$C to 400$^\circ$C. Though $|ξ_{DL}|$ is small while compare to those from Ta or W-based heterostructures, reversible current-induced SOT switching of a thermally-stable Mo/CoFeB/MgO heterostruture can still be achieved. Furthermore, we observe field-free current-induced switching from a Mo/CoFeB/MgO structure with the Mo layer being wedge-deposited. Our results indicate that even for a weak spin-orbit interaction 4d transition metal such as Mo, it is still possible to generate sufficient spin current for conventional SOT switching and to realize field-free current-induced switching by structural engineering.
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Submitted 24 August, 2018; v1 submitted 31 May, 2018;
originally announced May 2018.
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Selective multiple domain wall injection using spin-orbit torque
Authors:
Ziyan Luo,
Wugang Liao,
Yumeng Yang,
Chunxiang Zhu,
Yihong Wu
Abstract:
We demonstrate from both simulation and experiment a simple scheme for selective injection of multiple domain walls in a magnetic nanowire. The structure consists of a side-contact misaligned Hall bar made of ferromagnet/heavy metal bilayers. The combination of current-induced spin-orbit torque and an external magnetic field allows for the formation of localized domains with specific magnetization…
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We demonstrate from both simulation and experiment a simple scheme for selective injection of multiple domain walls in a magnetic nanowire. The structure consists of a side-contact misaligned Hall bar made of ferromagnet/heavy metal bilayers. The combination of current-induced spin-orbit torque and an external magnetic field allows for the formation of localized domains with specific magnetization direction and length, thereby creating domain walls in predetermined locations. With the side contacts at two sides misaligned for a distance that is comparable to the contact width, it is possible to create densely packed domains by simply applying current between different pairs of side contacts. Simulation results show that the proposed scheme is scalable to a large number of domains with its dimension limited only by the domain wall width.
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Submitted 9 October, 2017;
originally announced October 2017.
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All-optical control of superradiance and matter waves using a dispersive cavity
Authors:
Shih-Wei Su,
Zhen-Kai Lu,
Nina Rohringer,
Shih-Chuan Gou,
Wen-Te Liao
Abstract:
Cavity quantum electrodynamics (CQED) plays an elegant role of studying strong coupling between light and matter. However, a non-mechanical, direct and dynamical control of the used mirrors is still unavailable. Here we theoretically investigate a novel type of dynamically controllable cavity composed of two atomic mirrors. Based on the electromagnetically induced transparency (EIT), the reflectan…
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Cavity quantum electrodynamics (CQED) plays an elegant role of studying strong coupling between light and matter. However, a non-mechanical, direct and dynamical control of the used mirrors is still unavailable. Here we theoretically investigate a novel type of dynamically controllable cavity composed of two atomic mirrors. Based on the electromagnetically induced transparency (EIT), the reflectance of atomic mirror is highly controllable through its dispersive properties by varying the intensity of applied coupling fields or the optical depth of atomic media. To demonstrate the uniqueness of the present cavity, we further show the possibility of manipulating vacuum-induced diffraction of a binary Bose-Einstein condensate (BEC) when loading it into a dispersive cavity and experiencing superradiant scatterings. Our results may provide a novel all-optical element for atom optics and shine new light on controlling light-matter interaction.
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Submitted 20 August, 2015;
originally announced August 2015.
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Proposed Entanglement of X-ray Nuclear Polaritons as a Potential Method for Probing Matter at the Subatomic Scale
Authors:
Wen-Te Liao,
Adriana Pálffy
Abstract:
A setup for generating the special superposition of a simultaneously forward- and backward-propagating collective excitation in a nuclear sample is studied. We show that by actively manipulating the scattering channels of single x-ray quanta with the help of a normal incidence x-ray mirror, a nuclear polariton which propagates in two opposite directions can be generated. The two counterpropagating…
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A setup for generating the special superposition of a simultaneously forward- and backward-propagating collective excitation in a nuclear sample is studied. We show that by actively manipulating the scattering channels of single x-ray quanta with the help of a normal incidence x-ray mirror, a nuclear polariton which propagates in two opposite directions can be generated. The two counterpropagating polariton branches are entangled by a single x-ray photon. The quantum nature of the nuclear excitation entanglement gives rise to a subangstrom-wavelength standing wave excitation pattern that can be used as a flexible tool to probe matter dynamically on the subatomic scale.
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Submitted 8 February, 2014; v1 submitted 14 August, 2013;
originally announced August 2013.
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Coherence-enhanced optical determination of the $^{229}$Th isomeric transition
Authors:
Wen-Te Liao,
Sumanta Das,
Christoph H. Keitel,
Adriana Pálffy
Abstract:
The impact of coherent light propagation on the excitation and fluorescence of thorium nuclei in a crystal lattice environment is investigated theoretically. We find that in the forward direction the fluorescence signal exhibits characteristic intensity modulations dominated by an orders of magnitude faster, sped-up initial decay signal. This feature can be exploited for the optical determination…
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The impact of coherent light propagation on the excitation and fluorescence of thorium nuclei in a crystal lattice environment is investigated theoretically. We find that in the forward direction the fluorescence signal exhibits characteristic intensity modulations dominated by an orders of magnitude faster, sped-up initial decay signal. This feature can be exploited for the optical determination of the isomeric transition energy. In order to obtain a unmistakable signature of the isomeric nuclear fluorescence, we put forward a novel scheme for the direct measurement of the transition energy via electromagnetically modified nuclear forward scattering involving two fields that couple three nuclear states.
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Submitted 7 January, 2013; v1 submitted 12 October, 2012;
originally announced October 2012.
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Dependence of electronic and optical properties on a high-frequency field for carbon nanotubes
Authors:
Wenhu Liao,
Guanghui Zhou,
Kai-He Ding
Abstract:
We study theoretically the electronic structure, transport and optical properties for a zigzag single-wall carbon nanotube connected to two normal conductor leads under the irradiation of an external electromagnetic field at low temperatures, with particular emphasis on the features of high-frequency response. Using the standard nonequilibrium Green's function techniques, we examine the time-ave…
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We study theoretically the electronic structure, transport and optical properties for a zigzag single-wall carbon nanotube connected to two normal conductor leads under the irradiation of an external electromagnetic field at low temperatures, with particular emphasis on the features of high-frequency response. Using the standard nonequilibrium Green's function techniques, we examine the time-averaged density of states, the conductivity, the dielectric function and the electron energy loss spectra for the system with photon polarization parallel with the tunneling current direction, respectively. Through some numerical examples, it is shown that the density of states is strongly dependent on the incident electron energy, the strength and frequency of the applied field. For higher electron energies in comparison with lead-nanotube coupling energy, the system conductance decreases with increasing the field strength and increases with increasing the field frequency respectively, and shows some oscillation structures. Moreover, the optical functions for the system have also a rich structure with the variation of field frequency. It may demonstrate that this transport dependence on the external field parameters can be used to give the energy spectra information of carbon nanotubes and to detect the high-frequency microwave irradiation.
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Submitted 27 January, 2008;
originally announced January 2008.
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Electronic structure and transport for a laser-field-irradiated quantum wire with Rashba spin-orbit coupling
Authors:
Guanghui Zhou,
Wenhu Liao
Abstract:
We investigate theoretically the electronic structure and transport for a two-level quantum wire with Rashba spin-orbit coupling (SOC) under the irradiation of an external laser field at low temperatures. The photon-induced transitions between SOC-splitted subbands with the same lateral confinement quantum numbers and between subbands with different confinement quantum number are expected. Using…
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We investigate theoretically the electronic structure and transport for a two-level quantum wire with Rashba spin-orbit coupling (SOC) under the irradiation of an external laser field at low temperatures. The photon-induced transitions between SOC-splitted subbands with the same lateral confinement quantum numbers and between subbands with different confinement quantum number are expected. Using the method of equation of motion (EOM) for Keldysh nonequilibrium Green's functions (NGF), we examine the time-averaged density of states (DOS) and the spin polarized conductance for the system with photon polarization perpendicular to the wire direction. Through the analytical analysis and some numerical examples, the interplay effects of the external laser field and the Rashba SOC on both the DOS and the conductance of the system are demonstrated and discussed. It is found that the external laser field can adjust the spin polarization rate and the transport of the quantum wire system with some proper Rashba SOC strengths.
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Submitted 14 June, 2006;
originally announced June 2006.
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Electron transport of a quantum wire containing a finite-size impurity under THz electromagnetic field illumination
Authors:
Guanghui Zhou,
Yuan Li,
Fang Cheng,
Wenfu Liao
Abstract:
We theoretically investigate the electron transport properties for a semiconductor quantum wire containing a single finite-size attractive impurity under an external terahertz electromagnetic field illumination in the ballistic limit. Within the effective mass free-electron approximation, the scattering matrix for the system has been formulated by means of a time-dependent mode matching method.…
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We theoretically investigate the electron transport properties for a semiconductor quantum wire containing a single finite-size attractive impurity under an external terahertz electromagnetic field illumination in the ballistic limit. Within the effective mass free-electron approximation, the scattering matrix for the system has been formulated by means of a time-dependent mode matching method. Some interesting properties of the electron transmission for the system have been shown through a few groups of numerical examples. It is found that in the case of the comparative stronger field amplitude and the frequency resonant with the two lowest lateral energy levels in the impurity region, the field-induced intersubband transition dominates the process as if without the impurity. And there is a step-arising on the transmission as a function of the incident electron energy. However, in the case of lower field amplitude and the non-resonant frequencies both multiple symmetry Breit-type resonance peaks and asymmetry Fano-type dip lines appear in the electron transmission dependence on the incident energy due to the presence of the impurity and the external field. Therefore, within certain energy range the transmission as a function of the field frequency and/or field amplitude shows a rich structure. Moreover, the transmission dependence on the strength and size of the impurity is also discussed. It is suggested that these results mostly arise from the interplay effects between the impurity in a quantum wire and the applied field.
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Submitted 16 February, 2005;
originally announced February 2005.
