Showing 1–47 of 47 results for author: Liao, B

Spin-valley-locked Electroluminescence for High-Performance Circularly-Polarized Organic Light-Emitting Diodes

Authors: Yibo Deng, Teng Long, **yang Wang, Han Huang, Zijian Deng, Chunling Gu, Cunbin An, Bo Liao, Guillaume Malpuech, Dmitry Solnyshkov, Hongbing Fu, Qing Liao

Abstract: Circularly polarized (CP) organic light-emitting diodes (OLEDs) have attracted attention in potential applications including novel display and photonic technologies. However, conventional approaches cannot meet the requirements of device performance, such as high dissymmetry factor, high directionality, narrowband emission, simplified device structure and low costs. Here, we demonstrate spin-valle… ▽ More Circularly polarized (CP) organic light-emitting diodes (OLEDs) have attracted attention in potential applications including novel display and photonic technologies. However, conventional approaches cannot meet the requirements of device performance, such as high dissymmetry factor, high directionality, narrowband emission, simplified device structure and low costs. Here, we demonstrate spin-valley-locked CP-OLEDs without chiral emitters, but based on photonic spin-orbit coupling, where photons with opposite CP characteristics are emitted from different optical valleys. These spin-valley locked OLEDs exhibit a narrowband emission of 16 nm, a high EQE of 3.65, a maximum luminance of near 98000 cd/m2 and a gEL of up to 1.80, which are among the best performances of active single-crystal CP-OLEDs, achieved with a simple device structure. This strategy opens an avenue for practical applications towards three-dimensional displays and on-chip CP-OLEDs. △ Less

Submitted 11 July, 2024; originally announced July 2024.

Insulator-to-Metal Transition and Anomalously Slow Hot Carrier Cooling in a Photo-doped Mott Insulator

Authors: Usama Choudhry, ** Zhang, Kewen Huang, Emma Low, Yujie Quan, Basamat Shaheen, Ryan Gnabasik, Jiaqiang Yan, Angel Rubio, Kenneth S. Burch, Bolin Liao

Abstract: Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the spatial-temporal evolution of photoexcited species in a spin-orbit assisted Mott insulator α-RuCl3. At low optical… ▽ More Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the spatial-temporal evolution of photoexcited species in a spin-orbit assisted Mott insulator α-RuCl3. At low optical fluences, we observe extremely long hot photocarrier transport time over one nanosecond, almost an order of magnitude longer than any known values in conventional semiconductors. At higher optical fluences, we observe nonlinear features suggesting a photo-induced insulator-to-metal transition, which is unusual in a large-gap Mott insulator. Our results demonstrate the rich physics in a photo-doped Mott insulator that can be extracted from spatial-temporal imaging and showcase the capability of SUEM to sensitively probe photoexcitations in strongly correlated electron systems. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Comments: Comments are welcome. Please email feedback to [email protected]

Atomic-scale tunable phonon transport at tailored grain boundaries

Authors: Xiaowang Wang, Chaitanya A. Gadre, Runqing Yang, Wanjuan Zou, Xing Bin, Christopher Addiego, Toshihiro Aoki, Yujie Quan, Wei-Tao Peng, Yifeng Huang, Chaojie Du, Mingjie Xu, Xingxu Yan, Ruqian Wu, Shyue ** Ong, Bolin Liao, Penghui Cao, Xiaoqing Pan

Abstract: Manipulating thermal properties in materials has been of fundamental importance for advancing innovative technologies. Heat carriers such as phonons are impeded by breaking crystal symmetry or periodicity. Notable methods of impeding the phonon propagation include varying the density of defects, interfaces, and nanostructures, as well as changing composition. However, a robust link between the ind… ▽ More Manipulating thermal properties in materials has been of fundamental importance for advancing innovative technologies. Heat carriers such as phonons are impeded by breaking crystal symmetry or periodicity. Notable methods of impeding the phonon propagation include varying the density of defects, interfaces, and nanostructures, as well as changing composition. However, a robust link between the individual nanoscale defect structures, phonon states, and macroscopic thermal conductivity is lacking. Here we reveal from nanoscale structure-phonon mechanisms on how the grain boundary (GB) tilt and twist angles fundamentally drive the changes in atom rearrangements, exotic vibrational states, and finally macroscopic heat transport at different bicrystal strontium titanate GBs using emerging atomic resolution vibrational spectroscopy. The 10 deg and 22 deg tilt GBs exhibit reduced phonon populations by 54% and 16% compared to the bulk value, respectively, consistent with measured thermal conductivities. A tiny twist angle further introduces a fine and local tunning of thermal conductivity by introducing twist induced defects periodically embedded with the tilt induced GB defects. Our results demonstrate that varying the tilt angle coarsely modifies the phonon population along entire GB while varying the twist angle incurs a finer adjustment at periodic locations on the GB. Our study offers a systematic approach to understanding and manipulating cross GB thermal transport of arbitrary GBs predictably and precisely. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Impact of Dimensionality on the Magnetocaloric Effect in Two-dimensional Magnets

Authors: Lokanath Patra, Yujie Quan, Bolin Liao

Abstract: Magnetocaloric materials, which exploit reversible temperature changes induced by magnetic field variations, are promising for advancing energy-efficient cooling technologies. The potential integration of two-dimensional materials into magnetocaloric systems represents an emerging opportunity to enhance the magnetocaloric cooling efficiency. In this study, we use atomistic spin dynamics simulation… ▽ More Magnetocaloric materials, which exploit reversible temperature changes induced by magnetic field variations, are promising for advancing energy-efficient cooling technologies. The potential integration of two-dimensional materials into magnetocaloric systems represents an emerging opportunity to enhance the magnetocaloric cooling efficiency. In this study, we use atomistic spin dynamics simulations based on first-principles parameters to systematically evaluate how magnetocaloric properties transition from three-dimensional (3D) to two-dimensional (2D) ferromagnetic materials. We find that 2D features such as reduced Curie temperature, sharper magnetic transition, and higher magnetic susceptibility are beneficial for magnetocaloric applications, while the relatively higher lattice heat capacity in 2D can compromise achievable adiabatic temperature changes. We further propose GdSi$_2$ as a promising 2D magnetocaloric material near hydrogen liquefaction temperature. Our analysis offers valuable theoretical insights into the magnetocaloric effect in 2D ferromagnets and demonstrates that 2D ferromagnets hold promise for cooling and thermal management applications in compact and miniaturized nanodevices. △ Less

Submitted 7 May, 2024; originally announced May 2024.

Electron Drag Effect on Thermal Conductivity in Two-dimensional Semiconductors

Authors: Yujie Quan, Bolin Liao

Abstract: Two-dimensional (2D) materials have shown great potential in applications as transistors, where thermal dissipation becomes crucial because of the increasing energy density. Although thermal conductivity of 2D materials has been extensively studied, interactions between nonequilibrium electrons and phonons, which can be strong when high electric fields and heat current coexist, are not considered.… ▽ More Two-dimensional (2D) materials have shown great potential in applications as transistors, where thermal dissipation becomes crucial because of the increasing energy density. Although thermal conductivity of 2D materials has been extensively studied, interactions between nonequilibrium electrons and phonons, which can be strong when high electric fields and heat current coexist, are not considered. In this work, we systematically study the electron drag effect, where nonequilibrium electrons impart momenta to phonons and influence the thermal conductivity, in 2D semiconductors using ab initio simulations. We find that, at room temperature, electron drag can significantly increase thermal conductivity by decreasing phonon-electron scattering in 2D semiconductors, while its impact in three-dimensional (3D) semiconductors is negligible. We attribute this difference to the large electron-phonon scattering phase space and higher contribution to thermal conductivity by drag-active phonons. Our work elucidates the fundamental physics underlying coupled electron-phonon transport in materials of various dimensionalities. △ Less

Submitted 3 May, 2024; originally announced May 2024.

Comments: 16 pages, 5 figures

Enhancing Magnetocaloric Material Discovery: A Machine Learning Approach Using an Autogenerated Database by Large Language Models

Authors: Jiaoyue Yuan, Runqing Yang, Lokanath Patra, Bolin Liao

Abstract: Magnetic cooling based on the magnetocaloric effect is a promising solid-state refrigeration technology for a wide range of applications in different temperature ranges. Previous studies have mostly focused on near room temperature (300 K) and cryogenic temperature (< 10 K) ranges, while important applications such as hydrogen liquefaction call for efficient magnetic refrigerants for the intermedi… ▽ More Magnetic cooling based on the magnetocaloric effect is a promising solid-state refrigeration technology for a wide range of applications in different temperature ranges. Previous studies have mostly focused on near room temperature (300 K) and cryogenic temperature (< 10 K) ranges, while important applications such as hydrogen liquefaction call for efficient magnetic refrigerants for the intermediate temperature 10K to 100 K. For efficient use in this range, new magnetocaloric materials with matching Curie temperatures need to be discovered, while conventional experimental approaches are typically time-consuming and expensive. Here, we report a computational material discovery pipeline based on a materials database containing more than 6000 entries auto-generated by extracting reported material properties from literature using a large language model. We then use this database to train a machine learning model that can efficiently predict magnetocaloric properties of materials based on their chemical composition. We further verify the magnetocaloric properties of predicted compounds using ab initio atomistic spin dynamics simulations to close the loop for computational material discovery. Using this approach, we identify 11 new promising magnetocaloric materials for the target temperature range. Our work demonstrates the potential of combining large language models, machine learning, and ab initio simulations to efficiently discover new functional materials. △ Less

Submitted 4 March, 2024; originally announced March 2024.

Thermoelectric Transport in Weyl Semimetal BaMnSb2: a First-Principles Study

Authors: Yubi Chen, Rongying **, Bolin Liao, Sai Mu

Abstract: Topological materials are often associated with exceptional thermoelectric properties. Orthorhombic BaMnSb2 is a topological semimetal consisting of alternating layers of Ba, Sb, and MnSb. A recent experiment demonstrates that BaMnSb2 has a low thermal conductivity and modest thermopower, promising as a thermoelectric material. Through first-principles calculations with Coulomb repulsion and spin-… ▽ More Topological materials are often associated with exceptional thermoelectric properties. Orthorhombic BaMnSb2 is a topological semimetal consisting of alternating layers of Ba, Sb, and MnSb. A recent experiment demonstrates that BaMnSb2 has a low thermal conductivity and modest thermopower, promising as a thermoelectric material. Through first-principles calculations with Coulomb repulsion and spin-orbit coupling included, we studied the electronic structure, phononic structure, and thermoelectric transport properties of BaMnSb2 in depth. We find that BaMnSb2 exhibits a low lattice thermal conductivity, owing to the scattering of the acoustic phonons with low-frequency optical modes. Using the linearized Boltzmann transport theory with a constant relaxation time approximation, the thermopower is further calculated and an intriguing goniopolar transport behavior, which is associated with both n-type and p-type conduction along separate transport directions simultaneously, is observed. We propose that the figure of merit can be enhanced via do** in which electrical conductivity is decreased while the thermopower remains undiminished. BaMnSb2 is a potential platform for elucidating complex band structure effects and topological phenomena, paving the way to explore rich physics in low-dimensional systems. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Incipient nematicity from electron flat bands in a kagome metal

Authors: Nathan Drucker, Thanh Nguyen, Manasi Mandal, Phum Siriviboon, Yujie Quan, Artittaya Boonkird, Ryotaro Okabe, Fankang Li, Kaleb Buragge, Fumiaki Funuma, Masaaki Matsuda, Douglas Abernathy, Travis Williams, Songxue Chi, Feng Ye, Christie Nelson, Bolin Liao, Pavel Volkov, Mingda Li

Abstract: Engineering new quantum phases requires fine tuning of the electronic, orbital, spin, and lattice degrees of freedom. To this end, the kagome lattice with flat bands has garnered great attention by hosting various topological and correlated phases, when the flat band is at the Fermi level. Here we discover unconventional nematiciy in kagome metal CoSn, where flat bands are fully occupied below the… ▽ More Engineering new quantum phases requires fine tuning of the electronic, orbital, spin, and lattice degrees of freedom. To this end, the kagome lattice with flat bands has garnered great attention by hosting various topological and correlated phases, when the flat band is at the Fermi level. Here we discover unconventional nematiciy in kagome metal CoSn, where flat bands are fully occupied below the Fermi level. Thermodynamic, dilatometry, resonant X-ray scattering, inelastic neutron scattering, Larmor diffraction, and thermoelectric measurements consistently hint at rotational symmetry-breaking and nematic order that is pronounced only near T=225 K. These observations, principally the nematic's finite temperature stability -- incipience -- can be explained by a phenomenological model which reveals that thermally excited flat bands promote symmetry breaking at a characteristic temperature. Our work shows that thermal fluctuations, which are typically detrimental for correlated electron phases, can induce new ordered states of matter, avoiding the requirements for fine tuning of electronic bands. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Comments: 37 pages, 5 main figures, 14 supplementary figures

Room-temperature Magnetic Thermal Switching by Suppressing Phonon-Magnon Scattering

Authors: Fanghao Zhang, Lokanath Patra, Yubi Chen, Wenkai Ouyang, Paul Sarte, Shantal Adajian, Xiangying Zuo, Runqing Yang, Tengfei Luo, Bolin Liao

Abstract: Thermal switching materials, whose thermal conductivity can be controlled externally, show great potential in contemporary thermal management. Manipulating thermal transport properties through magnetic fields has been accomplished in materials that exhibit a high magnetoresistance. However, it is generally understood that the lattice thermal conductivity attributed to phonons is not significantly… ▽ More Thermal switching materials, whose thermal conductivity can be controlled externally, show great potential in contemporary thermal management. Manipulating thermal transport properties through magnetic fields has been accomplished in materials that exhibit a high magnetoresistance. However, it is generally understood that the lattice thermal conductivity attributed to phonons is not significantly impacted by the magnetic fields. In this study, we experimentally demonstrate the significant impact of phonon-magnon scattering on the thermal conductivity of the rare-earth metal gadolinium near room temperature, which can be controlled by a magnetic field to realize thermal switching. Using first-principles lattice dynamics and spin-lattice dynamics simulations, we attribute the observed change in phononic thermal conductivity to field-suppressed phonon-magnon scattering. This research suggests that phonon-magnon scattering in ferromagnetic materials is crucial for determining their thermal conductivity, opening the door to innovative magnetic-field-controlled thermal switching materials. △ Less

Submitted 10 January, 2024; originally announced January 2024.

Extraordinary Thermoelectric Properties of Topological Surface States in Quantum-Confined Cd3As2 Thin Films

Authors: Wenkai Ouyang, Alexander C. Lygo, Yubi Chen, Huiyuan Zheng, Dung Vu, Brandi L. Wooten, Xichen Liang, Wang Yao, Joseph P. Heremans, Susanne Stemmer, Bolin Liao

Abstract: Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. In this work, we systematically examine thermoelectric transport in a series of topological Di… ▽ More Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. In this work, we systematically examine thermoelectric transport in a series of topological Dirac semimetal Cd3As2 thin films grown by molecular beam epitaxy. Surprisingly, we find significantly enhanced Seebeck effect and anomalous Nernst effect at cryogenic temperatures when the Cd3As2 layer is thin. Combining angle-dependent quantum oscillation analysis, magnetothermoelectric measurement, transport modelling and first-principles simulation, we isolate the contributions from bulk and surface conducting channels and attribute the unusual thermoeletric properties to the topological surface states. Our analysis showcases the rich thermoelectric transport physics in quantum-confined topological Dirac semimetal thin films and suggests new routes to achieving high thermoelectric performance at cryogenic temperatures. △ Less

Submitted 31 August, 2023; originally announced August 2023.

Lattice Dynamics and Thermal Transport in Semiconductors with Anti-bonding Valence Bands

Authors: Jiaoyue Yuan, Yubi Chen, Bolin Liao

Abstract: Achieving high thermoelectric performance requires efficient manipulation of thermal conductivity and a fundamental understanding of the microscopic mechanisms of phonon transport in crystalline solids. One of the major challenges in thermal transport is achieving ultralow lattice thermal conductivity. In this study, we use the anti-bonding character of the highest-occupied valence band as an effi… ▽ More Achieving high thermoelectric performance requires efficient manipulation of thermal conductivity and a fundamental understanding of the microscopic mechanisms of phonon transport in crystalline solids. One of the major challenges in thermal transport is achieving ultralow lattice thermal conductivity. In this study, we use the anti-bonding character of the highest-occupied valence band as an efficient descriptor for discovering new materials with an ultralow thermal conductivity. We first examined the relationship between anti-bonding valence bands and low lattice thermal conductivity in model systems PbTe and CsPbBr3. Then, we conducted a high-throughput search in the Materials Project database and identified over 600 experimentally stable binary semi-conductors with a strong anti-bonding character in their valence bands. From our candidate list, we conducted a comprehensive analysis of the chemical bonds and the thermal transport in the XS family, where X=K, Rb, and Cs are alkaline metals. These materials all exhibit ultralow thermal conductivities less than 1 W/(m K) at room temperature despite simple structures. We attributed the ultralow thermal conductivity to the weakened bonds and increased phonon anharmonicity due to their anti-bonding valence bands. Our results provide chemical intuitions to understand lattice dynamics in crystals and open up a convenient venue towards searching for materials with an intrinsically low lattice thermal conductivity. △ Less

Submitted 16 May, 2023; originally announced May 2023.

Comments: 23 pages, 5 figures

Significant Phonon Drag Effect in Wide Bandgap GaN and AlN

Authors: Yujie Quan, Yubi Chen, Bolin Liao

Abstract: A thorough understanding of electrical and thermal transport properties of group-III nitride semiconductors is essential for their electronic and thermoelectric applications. Despite extensive previous studies, these transport properties were typically calculated without considering the nonequilibrium coupling effect between electrons and phonons, which can be particularly strong in group-III nitr… ▽ More A thorough understanding of electrical and thermal transport properties of group-III nitride semiconductors is essential for their electronic and thermoelectric applications. Despite extensive previous studies, these transport properties were typically calculated without considering the nonequilibrium coupling effect between electrons and phonons, which can be particularly strong in group-III nitride semiconductors due to the high electric fields and high heat currents in devices based on them. In this work, we systematically examine the phonon drag effect, namely the momentum exchange between nonequilibrium phonons and electrons, and its impact on charge mobility and Seebeck coefficient in GaN and AlN by solving the fully coupled electron and phonon Boltzmann transport equations with ab initio scattering parameters. We find that, even at room temperature, the phonon drag effect can significantly enhance mobility and Seebeck coefficient in GaN and AlN, especially at higher carrier concentrations. Furthermore, we show that the phonon drag contribution to mobility and Seebeck coefficient scale differently with the carrier concentration and we highlight a surprisingly important contribution to the mobility enhancement from the polar optical phonons. We attribute both findings to the distinct mechanisms the phonon drag affects mobility and Seebeck coefficient. Our study advances the understanding of the strong phonon drag effect on carrier transport in wide bandgap GaN and AlN and gives new insights into the nature of coupled electron-phonon transport in polar semiconductors. △ Less

Submitted 31 March, 2023; originally announced April 2023.

Indirect Exchange Interaction Leads to Large Lattice Contribution to Magnetocaloric Entropy Change

Authors: Lokanath Patra, Bolin Liao

Abstract: Materials with a large magnetocaloric response are highly desirable for magnetic cooling applications. It is suggested that a strong spin-lattice coupling tends to generate a large magnetocaloric effect, but no microscopic mechanism has been proposed. In this work, we use spin lattice dynamics simulation to examine the lattice contribution to the magnetocaloric entropy change in bcc iron (Fe) and… ▽ More Materials with a large magnetocaloric response are highly desirable for magnetic cooling applications. It is suggested that a strong spin-lattice coupling tends to generate a large magnetocaloric effect, but no microscopic mechanism has been proposed. In this work, we use spin lattice dynamics simulation to examine the lattice contribution to the magnetocaloric entropy change in bcc iron (Fe) and hcp gadolinium (Gd) with exchange interaction parameters determined from ab initio calculations. We find that indirect Ruderman Kittel Kasuya Yosida (RKKY) exchange interaction in hcp Gd leads to longer range spin lattice coupling and more strongly influences the low frequency long wavelength phonons. This results in a higher lattice contribution towards the total magnetocaloric entropy change as compared to bcc Fe with short range direct exchange interactions. Our analysis provides a framework for understanding the magnetocaloric effect in magnetic materials with strong spin lattice couplings. Our finding suggests that long range indirect RKKY type exchange gives rise to a larger lattice contribution to the magnetocaloric entropy change and is, thus, beneficial for magnetocaloric materials. △ Less

Submitted 4 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. Lett. 131, 066703 (2023)

Virtual Node Graph Neural Network for Full Phonon Prediction

Authors: Ryotaro Okabe, Abhijatmedhi Chotrattanapituk, Artittaya Boonkird, Nina Andrejevic, Xiang Fu, Tommi S. Jaakkola, Qichen Song, Thanh Nguyen, Nathan Drucker, Sai Mu, Bolin Liao, Yongqiang Cheng, Mingda Li

Abstract: The structure-property relationship plays a central role in materials science. Understanding the structure-property relationship in solid-state materials is crucial for structure design with optimized properties. The past few years witnessed remarkable progress in correlating structures with properties in crystalline materials, such as machine learning methods and particularly graph neural network… ▽ More The structure-property relationship plays a central role in materials science. Understanding the structure-property relationship in solid-state materials is crucial for structure design with optimized properties. The past few years witnessed remarkable progress in correlating structures with properties in crystalline materials, such as machine learning methods and particularly graph neural networks as a natural representation of crystal structures. However, significant challenges remain, including predicting properties with complex unit cells input and material-dependent, variable-length output. Here we present the virtual node graph neural network to address the challenges. By develo** three types of virtual node approaches - the vector, matrix, and momentum-dependent matrix virtual nodes, we achieve direct prediction of $Γ$-phonon spectra and full dispersion only using atomic coordinates as input. We validate the phonon bandstructures on various alloy systems, and further build a $Γ$-phonon database containing over 146,000 materials in the Materials Project. Our work provides an avenue for rapid and high-quality prediction of phonon spectra and bandstructures in complex materials, and enables materials design with superior phonon properties for energy applications. The virtual node augmentation of graph neural networks also sheds light on designing other functional properties with a new level of flexibility. △ Less

Submitted 5 January, 2023; originally announced January 2023.

Comments: 40 pages total, 4 main figures + 25 supplementary figures

Understanding binary phase separation towards Cu-C nanocrystalline-amorphous composites

Authors: Jiajian Guan, Qin Jiang, Yue He, Xu Zhang, Bin Liao, Wei Gao, Lizhao Qin

Abstract: The nanocrystalline-amorphous textures are commonly observed in the coatings synthesized by energetic deposition.This work reports a theoretical study towards binary Cu-C phase separation.By performing a MD simulation using the LAMMPS instead of classical PFK methodology, we theoretically explained how the initial pressure and Cu concentration fundamentally determines Cu nanocrystalline's final mo… ▽ More The nanocrystalline-amorphous textures are commonly observed in the coatings synthesized by energetic deposition.This work reports a theoretical study towards binary Cu-C phase separation.By performing a MD simulation using the LAMMPS instead of classical PFK methodology, we theoretically explained how the initial pressure and Cu concentration fundamentally determines Cu nanocrystalline's final morphology and grain size,which gives a novel insight into binary phase separation and the evolution mechanism of nanocrystalline-amorphous structures during energetic deposition. △ Less

Submitted 16 July, 2023; v1 submitted 27 November, 2022; originally announced November 2022.

Comments: 12 pages, 4 figures

Impact of photoexcitation on secondary electron emission: a Monte Carlo study

Authors: Wenkai Ouyang, Xiangying Zuo, Bolin Liao

Abstract: Understanding the transport of photogenerated charge carriers in semiconductors is crucial for applications in photovoltaics, optoelectronics and photo-detectors. While recent experimental studies using scanning ultrafast electron microscopy (SUEM) have demonstrated that the local change in the secondary electron emission induced by photoexcitation enables direct visualization of the photocarrier… ▽ More Understanding the transport of photogenerated charge carriers in semiconductors is crucial for applications in photovoltaics, optoelectronics and photo-detectors. While recent experimental studies using scanning ultrafast electron microscopy (SUEM) have demonstrated that the local change in the secondary electron emission induced by photoexcitation enables direct visualization of the photocarrier dynamics in space and time, the origin of the corresponding image contrast still remains unclear. Here, we investigate the impact of photoexcitation on secondary electron emissions from semiconductors using a Monte Carlo simulation aided by time-dependent density functional theory (TDDFT). Particularly, we examine two photo-induced effects: the generation of photo-carriers in the sample bulk, and the surface photovoltage (SPV) effect. Using doped silicon as a model system and focusing on primary electron energies below 1 keV, we found that both the hot photocarrier effect immediately after photoexcitation and the SPV effect play dominant roles in changing the secondary electron yield (SEY), while the distribution of photocarriers in the bulk leads to a negligible change in SEY. Our work provides insights into electron-matter interaction under photo-illumiation and paves the way towards a quantitative interpretation of the SUEM contrasts. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Comments: 6 figures

Map** the Pathways of Photo-induced Ion Migration in Organic-inorganic Hybrid Halide Perovskites

Authors: Taeyong Kim, Soyeon Park, Vasudevan Iyer, Qi Jiang, Usama Choudhry, Gage Eichman, Ryan Gnabasik, Benjamin Lawrie, Kai Zhu, Bolin Liao

Abstract: Organic-inorganic hybrid perovskites (OIHPs) exhibiting exceptional photovoltaic and optoelectronic properties are of fundamental and practical interest, owing to their tunability and low manufacturing cost. For practical applications, however, challenges such as material instability and the photocurrent hysteresis occurring in perovskite solar cells under light exposure need to be understood and… ▽ More Organic-inorganic hybrid perovskites (OIHPs) exhibiting exceptional photovoltaic and optoelectronic properties are of fundamental and practical interest, owing to their tunability and low manufacturing cost. For practical applications, however, challenges such as material instability and the photocurrent hysteresis occurring in perovskite solar cells under light exposure need to be understood and addressed. While extensive investigations have suggested that ion migration is a plausible origin of these detrimental effects, detailed understanding of the ion migration pathways remains elusive. Here, we report the characterization of photo-induced ion migration in OIHPs using \textit{in situ} laser illumination inside a scanning electron microscope, coupled with secondary electron imaging, energy-dispersive X-ray spectroscopy and cathodoluminescence with varying primary electron energies. Using methylammonium lead iodide (MAPbI$_3$), formamidinium lead iodide (FAPbI$_3$) and hybrid formamidinium-methylammonium lead iodide as model systems, we observed photo-induced long-range migration of halide ions over hundreds of micrometers and elucidated the transport pathways of various ions both near the surface and inside the bulk of the OIHPs, including a surprising finding of the vertical migration of lead ions. Our study provides insights into ion migration processes in OIHPs that can aid OIHP material design and processing in future applications. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Persistent hot carrier diffusion in boron arsenide single crystals imaged by ultrafast electron microscopy

Authors: Usama Choudhry, Fengjiao Pan, Taeyong Kim, Ryan Gnabasik, Geethal Amila Gamage, Haoran Sun, Alex Ackerman, Zhifeng Ren, Bolin Liao

Abstract: Cubic boron arsenide (BAs) is promising for microelectronics thermal management due to its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties due to small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to direct… ▽ More Cubic boron arsenide (BAs) is promising for microelectronics thermal management due to its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties due to small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the diffusion of photoexcited charge carriers in BAs single crystals. Surprisingly, we observed ambipolar diffusion at low optical fluence with persistent hot carrier dynamics for above 200 picoseconds, which can be attributed to the large frequency gap between acoustic and optical phonons, the same feature that is responsible for the high thermal conductivity. At higher optical fluence, we observed spontaneous electron-hole separation. Our results show BAs is an attractive optoelectronic material combining high thermal conductivity and excellent photocarrier transport properties. Our study also demonstrates the capability of SUEM to probe photocarrier transport in emerging materials. △ Less

Submitted 25 June, 2022; originally announced June 2022.

Comments: 10 pages; 9 figures

Tutorial: Characterizing Microscale Energy Transport in Materials with Transient Grating Spectroscopy

Authors: Usama Choudhry, Taeyong Kim, Melanie Adams, Jeewan Ranasinghe, Runqing Yang, Bolin Liao

Abstract: Microscale energy transport processes are crucial in microelectronics, energy harvesting devices, and emerging quantum materials. To study these processes, methods that can probe transport with conveniently tunable length scales are highly desirable. Transient grating spectroscopy (TGS) is such a tool that can monitor microscale energy transport processes associated with various fundamental energy… ▽ More Microscale energy transport processes are crucial in microelectronics, energy harvesting devices, and emerging quantum materials. To study these processes, methods that can probe transport with conveniently tunable length scales are highly desirable. Transient grating spectroscopy (TGS) is such a tool that can monitor microscale energy transport processes associated with various fundamental energy carriers including electrons, phonons, and spins. Having been developed and applied for a long time in the chemistry community, TGS has regained popularity recently in studying different transport regimes in solid-state materials. In this Tutorial, we provide an in-depth discussion of the operational principle and instrumentation details of a modern heterodyne TGS configuration from a practitioner's point of view. We further review recent applications of TGS in characterizing microscale transport of heat, charge, spin, and acoustic waves, with an emphasis on thermal transport. △ Less

Submitted 27 August, 2021; originally announced August 2021.

Comments: 44 pages, 11 figures. Comments are welcome

Spatiotemporal Imaging of Thickness-Induced Band Bending Junctions

Authors: Joeson Wong, Artur R. Davoyan, Bolin Liao, Andrey Krayev, Kiyoung Jo, Eli Rotenberg, Aaron Bostwick, Chris Jozwiak, Deep Jariwala, Ahmed Zewail, Harry A. Atwater

Abstract: Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a "band bending junction", a new type of semiconductor homojunction whose surface potential landscape depends solely on a difference in thickness between the two semiconduct… ▽ More Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a "band bending junction", a new type of semiconductor homojunction whose surface potential landscape depends solely on a difference in thickness between the two semiconductor regions atop a buried heterojunction interface. Using MoS2 on Au to form a buried heterojunction interface, we find that lateral surface potential differences can arise in MoS2 from the local extent of vertical band bending in thin and thick MoS2 regions. Using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of photogenerated charge carriers and find that lateral carrier separation is enabled by a band bending junction, which is confirmed with semiconductor transport simulations. Band bending junctions may therefore enable new electronic and optoelectronic devices in Van der Waals materials that rely on thickness variations rather than do** to separate charge carriers. △ Less

Submitted 4 March, 2021; originally announced March 2021.

Comments: 16 pages, 4 figures

Crystal-symmetry-based selection rules for anharmonic phonon-phonon scattering from a group theory formalism

Authors: Runqing Yang, Shengying Yue, Yujie Quan, Bolin Liao

Abstract: Anharmonic phonon-phonon scattering serves a critical role in heat conduction in solids. Previous studies have identified many selection rules for possible phonon-phonon scattering channels imposed by phonon energy and momentum conservation conditions and crystal symmetry. However, the crystal-symmetry-based selection rules have mostly been \textit{ad hoc} so far in selected materials, and a gener… ▽ More Anharmonic phonon-phonon scattering serves a critical role in heat conduction in solids. Previous studies have identified many selection rules for possible phonon-phonon scattering channels imposed by phonon energy and momentum conservation conditions and crystal symmetry. However, the crystal-symmetry-based selection rules have mostly been \textit{ad hoc} so far in selected materials, and a general formalism that can summarize known selection rules and lead to new ones in any given crystal is still lacking. In this work, we apply a general formalism for symmetry-based scattering selection rules based on the group theory to anharmonic phonon-phonon scatterings, which can reproduce known selection rules and guide the discovery of new selection rules between phonon branches imposed by the crystal symmetry. We apply this formalism to analyze the phonon-phonon scattering selection rules imposed by the in-plane symmetry of graphene, and demonstrate the significant impact of symmetry-breaking strain on the lattice thermal conductivity. Our work quantifies the critical influence of the crystal symmetry on the lattice thermal conductivity in solids and suggests routes to engineer heat conduction by tuning the crystal symmetry. △ Less

Submitted 3 March, 2021; originally announced March 2021.

Comments: 26 pages, 9 figures. Comments are welcome

Journal ref: Phys. Rev. B 103, 184302 (2021)

Electric field effect on the thermal conductivity of wurtzite GaN

Authors: Yujie Quan, Sheng-Ying Yue, Bolin Liao

Abstract: Gallium nitride (GaN), a wide band-gap semiconductor, has been broadly used in power electronic devices due to its high electron mobility and high breakdown voltage. Its relatively high thermal conductivity makes GaN a favorable material for such applications, where heat dissipation is a major concern for device efficiency and long-term stability. However, in GaN-based transistors, where the activ… ▽ More Gallium nitride (GaN), a wide band-gap semiconductor, has been broadly used in power electronic devices due to its high electron mobility and high breakdown voltage. Its relatively high thermal conductivity makes GaN a favorable material for such applications, where heat dissipation is a major concern for device efficiency and long-term stability. However, in GaN-based transistors, where the active region can withstand extremely strong electric fields, the field effect on the thermal transport properties has drawn little attention so far. In this work, we apply first-principles methods to investigate phonon properties of wurtzite GaN in the presence of a near-breakdown electric field applied along different crystallographic directions. We find that the electric field changes thermal conductivity considerably via impacting the bond stiffness and ionicity as well as the crystal symmetry, although it has little effect on phonon dispersions. The presence of an out-of-plane electric field increases (decreases) the thermal conductivity parallel (perpendicular) to the electric field, which is attributed to different changes of the Ga-N bond stiffness and ionicity. When an in-plane electric field is applied, the sizable decrease of thermal conductivities along all directions is attributed to the crystal symmetry breaking that enhances the phonon-phonon scattering. Our study provides insights into the effect of extreme external electric fields on phonon transport properties in wide-gap semiconductors. △ Less

Submitted 12 February, 2021; originally announced February 2021.

Comments: 9 pages, 7 figures. Comments are welcome

Impact of Electron-Phonon Interaction on Thermal Transport: A Review

Authors: Yujie Quan, Shengying Yue, Bolin Liao

Abstract: A thorough understanding of the microscopic picture of heat conduction in solids is critical to a broad range of applications, from thermal management of microelectronics to more efficient thermoelectric materials. The transport properties of phonons, the major microscopic heat carriers in semiconductors and insulators, particularly their scattering mechanisms, have been a central theme in microsc… ▽ More A thorough understanding of the microscopic picture of heat conduction in solids is critical to a broad range of applications, from thermal management of microelectronics to more efficient thermoelectric materials. The transport properties of phonons, the major microscopic heat carriers in semiconductors and insulators, particularly their scattering mechanisms, have been a central theme in microscale heat conduction research. In the past two decades, significant advancements have been made in computational and experimental efforts to probe phonon-phonon, phonon-impurity, and phonon-boundary scattering channels in detail. In contrast, electron-phonon scatterings were long thought to have negligible effects on thermal transport in most materials under ambient conditions. This article reviews the recent progress in first-principles computations and experimental methods that show clear evidence for a strong impact of electron-phonon interaction on phonon transport in a wide variety of technologically relevant solid-state materials. Under thermal equilibrium conditions, electron-phonon interactions can modify the total phonon scattering rates and renormalize the phonon frequency, as determined by the imaginary part and the real part of the phonon self-energy, respectively. Under nonequilibrium transport conditions, electron-phonon interactions can affect the coupled transport of electrons and phonons in the bulk through the "phonon or electron drag" mechanism as well as the interfacial thermal transport. Based on these recent results, we evaluate the potential use of electron-phonon interactions to control thermal transport in solids. We also provide an outlook on future directions of computational and experimental developments. △ Less

Submitted 2 February, 2021; originally announced February 2021.

Comments: 23 pages, 5 figures. Comments are welcome

Transient Grating Spectroscopy of Photocarrier Dynamics in Semiconducting Polymer Thin Films

Authors: Wenkai Ouyang, Yu Li, Brett Yurash, Nora Schopp, Alejandro Vega-Flick, Viktor Brus, Thuc-Quyen Nguyen, Bolin Liao

Abstract: While charge carrier dynamics and thermal management are both keys to the operational efficiency and stability for energy-related devices, experimental techniques that can simultaneously characterize both properties are still lacking. In this paper, we use laser-induced transient grating (TG) spectroscopy to characterize thin films of the archetypal organic semiconductor regioregular poly(3-hexylt… ▽ More While charge carrier dynamics and thermal management are both keys to the operational efficiency and stability for energy-related devices, experimental techniques that can simultaneously characterize both properties are still lacking. In this paper, we use laser-induced transient grating (TG) spectroscopy to characterize thin films of the archetypal organic semiconductor regioregular poly(3-hexylthiophene) (P3HT) and its blends with the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) on glass substrates. While the thermal response is determined to be dominated by the substrates, we show that the recombination dynamics of photocarriers in the organic semiconductor thin films occur on a similar timescale and can be separated from the thermal response. Our measurements indicate that the photocarrier dynamics are determined by multiple recombination processes and our extracted recombination rates are in good agreement with previous reports using other techniques. We further apply TG spectroscopy to characterize another conjugated polymer and a molecular fluorescent material to demonstrate its general applicability. Our study indicates the potential of transient grating spectroscopy to simultaneously characterize thermal transport and photocarrier dynamics in organic optoelectronic devices. △ Less

Submitted 29 October, 2020; originally announced October 2020.

Comments: 18 pages; 5 Figures

Phonon softening near topological phase transitions

Authors: Shengying Yue, Bowen Deng, Yanming Liu, Yujie Quan, Runqing Yang, Bolin Liao

Abstract: Topological phase transitions occur when the electronic bands change their topological properties, typically featuring the closing of the bandgap. While the influence of topological phase transitions on electronic and optical properties has been extensively studied, its implication on phononic properties and thermal transport remains unexplored. In this work, we use first-principles simulations to… ▽ More Topological phase transitions occur when the electronic bands change their topological properties, typically featuring the closing of the bandgap. While the influence of topological phase transitions on electronic and optical properties has been extensively studied, its implication on phononic properties and thermal transport remains unexplored. In this work, we use first-principles simulations to show that certain phonon modes are significantly softened near topological phase transitions, leading to increased phonon-phonon scattering and reduced lattice thermal conductivity. We demonstrate this effect using two model systems: pressure-induced topological phase transition in $\rm ZrTe_5$ and chemical composition induced topological phase transition in $\rm{Hg_{1-x}Cd_{x}Te}$. We attribute the phonon softening to emergent Kohn anomalies associated with the closing of the bandgap. Our study reveals the strong connection between electronic band structures and lattice instabilities and opens up a potential direction towards controlling heat conduction in solids. △ Less

Submitted 29 October, 2020; v1 submitted 27 January, 2020; originally announced January 2020.

Comments: 8 pages, 5 figures. Comments are welcome

Journal ref: Phys. Rev. B 102, 235428 (2020)

Carrier Density Oscillation in photoexcited Semiconductors

Authors: Ebrahim Najafi, Amir Jafari, Bolin Liao, Ahmed Zewail

Abstract: The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of nonlinear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we describe the ultrafast imaging of nonlinear carrier transport in silicon, excited by an intense femtosecond laser pulse. We use scanning ultrafast electron microscopy (SUEM… ▽ More The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of nonlinear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we describe the ultrafast imaging of nonlinear carrier transport in silicon, excited by an intense femtosecond laser pulse. We use scanning ultrafast electron microscopy (SUEM) to show that, at a sufficiently high excitation fluence, the transport of photoexcited carriers slows down by turning into an oscillatory process. We attribute this nonlinear response to the electric field, generated by the spatial separation of these carriers under intrinsic and photo-induced fields; we then provide an advection-diffusion model that mimics the experimental observation. Our finding provides a direct imaging evidence for the electrostatic oscillation of hot carriers in highly excited semiconductors and offers new insights into their spatiotemporal evolution as the equilibrium is recovered. △ Less

Submitted 13 September, 2019; originally announced September 2019.

Soft phonons and ultralow lattice thermal conductivity in the Dirac semimetal Cd3As2

Authors: Shengying Yue, Hamid T. Chorsi, Manik Goyal, Timo Schumann, Runqing Yang, Tashi Xu, Bowen Deng, Susanne Stemmer, Jon A. Schuller, Bolin Liao

Abstract: Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combi… ▽ More Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combine first-principles lattice dynamics calculations and temperature-dependent high-resolution Raman spectroscopy of high-quality single-crystal thin films grown by molecular beam epitaxy to reveal the existence of a group of soft optical phonon modes at the Brillouin zone center of Cd3As2. These soft phonon modes significantly increase the scattering phase space of heat-carrying acoustic phonons and are the origin of the low lattice thermal conductivity of Cd3As2. Furthermore, we show that the interplay between the phonon-phonon Umklapp scattering rates and the soft optical phonon frequency explains the unusual non-monotonic temperature dependence of the lattice thermal conductivity of Cd3As2. Our results further suggest that the soft phonon modes are potentially induced by a Kohn anomaly associated with the Dirac nodes, in analogy to similar, nonetheless weaker, effects in graphene and Weyl semimetals. △ Less

Submitted 10 August, 2019; originally announced August 2019.

Comments: 7 pages, 4 figure. Comments are welcome

Journal ref: Phys. Rev. Research 1, 033101 (2019)

Widely Tunable Optical and Thermal Properties of Dirac Semimetal Cd$_3$As$_2$

Authors: Hamid T. Chorsi, Shengying Yue, Prasad P. Iyer, Manik Goyal, Timo Schumann, Susanne Stemmer, Bolin Liao, Jon A. Schuller

Abstract: In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demons… ▽ More In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demonstrate thermo-optic shifts larger than those of traditional III-V semiconductors, which we attribute to the obtained large thermal expansion coefficient as revealed by first-principles calculations. Electron scattering rate, plasma frequency edge, Fermi level shift, optical conductivity, and electron effective mass analysis of Cd$_3$As$_2$ thin-films are quantified and discussed in detail. Our ab initio density functional study and experimental analysis of epitaxially grown Cd$_3$As$_2$ promise applications for nanophotonic and nanoelectronic devices, such as reconfigurable metamaterials and metasurfaces, nanoscale thermal emitters, and on-chip directional antennas. △ Less

Submitted 28 July, 2019; originally announced July 2019.

Journal ref: Advanced Optical Materials, 2020

Controlling Thermal Conductivity of Two-dimensional Materials via Externally Induced Phonon-Electron Interaction

Authors: Sheng-Ying Yue, Runqing Yang, Bolin Liao

Abstract: Phonon scattering by electrons, or "phonon-electron scattering", has been recognized as a significant scattering channel for phonons in materials with high electron concentration, such as thermoelectrics and nanoelectronics, even at room temperature. Despite the abundant previous studies of phonon-electron scattering in different types of three-dimensional (3D) bulk materials, its impact on the ph… ▽ More Phonon scattering by electrons, or "phonon-electron scattering", has been recognized as a significant scattering channel for phonons in materials with high electron concentration, such as thermoelectrics and nanoelectronics, even at room temperature. Despite the abundant previous studies of phonon-electron scattering in different types of three-dimensional (3D) bulk materials, its impact on the phonon transport, and thus the heat transfer properties, of two-dimensional (2D) materials has not been understood. In this work, we apply ab initio methods to calculate the phonon-electron scattering rates in two representative 2D materials, silicene and phosphorene, and examine the potential of controlling the thermal conductivity of these materials via externally induced phonon-electron scattering by electrostatic gating. We also develop an analytical model to explain the impact of reduced dimensionality and distinct electron and phonon dispersions in 2D on phonon-electron scattering processes. We find that over 40\% reduction of the lattice thermal conductivity can be achieved in silicene with an induced charge carrier concentration in the range of $10^{13}~cm^{-2}$, which is experimentally achievable. Our study not only generates new fundamental insights into phonon transport in 2D materials but also provides practical guidelines to search for 2D materials with strong phonon-electron scattering for potential thermal switching applications. △ Less

Submitted 24 April, 2019; originally announced April 2019.

Comments: 21 pages, 6 figures

Journal ref: Phys. Rev. B 100, 115408 (2019)

Coherent Phonon Transport in Two-dimensional Graphene Superstructures

Authors: Usama Choudhry, Shengying Yue, Bolin Liao

Abstract: Coherent wave effects of thermal phonons hold promise of transformative opportunities in thermal transport control but remain largely unexplored due to the small wavelength of thermal phonons, typically below a few nanometers. This small length scale indicates that, instead of artificial phononic crystals, a more promising direction is to examine the coherent phonon effects in natural materials wi… ▽ More Coherent wave effects of thermal phonons hold promise of transformative opportunities in thermal transport control but remain largely unexplored due to the small wavelength of thermal phonons, typically below a few nanometers. This small length scale indicates that, instead of artificial phononic crystals, a more promising direction is to examine the coherent phonon effects in natural materials with hierarchical superstructures matching the thermal phonon wavelength. In this work, we use first-principles simulations to characterize the previously unstudied thermal properties of D-graphene and T-graphene, two-dimensional carbon allotropes based upon the traditional graphene structure but containing a secondary, in-plane periodicity. We find that despite very similar atomic structure and bonding strength, D-graphene and T-graphene possess significantly different thermal properties than that of pristine graphene. At room temperature, the calculated thermal conductivity of D-graphene and T-graphene is 600 Wm-1K-1 and 800 Wm-1K-1 compared to over 3000 Wm-1K-1 for graphene. We attribute these distinct properties to the presence of naturally occurring, low frequency optical phonon modes that display characteristics of phonon coherence and arise from a folding of the acoustic modes and the associated frequency gap opening, a phenomenon also found in superlattices where an out of plane periodicity is introduced. Furthermore, we observe significantly enhanced Umklapp scatterings in D- and T-graphene that largely suppress the hydrodynamic phonon transport in pristine graphene. Our study presents D-graphene and T-graphene as ideal model systems to explore the coherent phonon effects in 2D and demonstrates the potential of using coherent phonon effects to significantly modify thermal transport of 2D materials without making drastic changes to their fundamental compositions. △ Less

Submitted 5 April, 2019; originally announced April 2019.

Comments: 19 pages, 4 figures, 1 table

Journal ref: Phys. Rev. B 100, 165401 (2019)

Electron-proton Co-do** Induced Metal-insulator Transition in VO2 Film via Surface Self-assembled Ascorbic Acid Molecules

Authors: Bowen Lia, Liyan Xieb, Zhaowu Wang, Shi Chen, Hui Ren, Yuliang Chen, Chengming Wang, Guobin Zhang, Jun Jiang, Chongwen Zou

Abstract: Charge do** is an effective way to induce metal-insulate transition (MIT) in correlated materials for many important utilizations, which is however practically limited by problem of low stability. In this study, we have achieved pronounced phase modulation and stabilized the metallic state of monoclinic vanadium dioxide (VO2) at room temperature, via a novel electron-proton co-do** mechanism d… ▽ More Charge do** is an effective way to induce metal-insulate transition (MIT) in correlated materials for many important utilizations, which is however practically limited by problem of low stability. In this study, we have achieved pronounced phase modulation and stabilized the metallic state of monoclinic vanadium dioxide (VO2) at room temperature, via a novel electron-proton co-do** mechanism driven by surface absorption of self-assembled L-ascorbic acid (AA) molecules. The ionized AA- species in solution donate effective electrons to the adsorbed VO2 surface, which then electrostatically attract surrounding protons to penetrate, and eventually results in stable hydrogen-doped metallic VO2. The variations of phase and electronic structures as well as the electron occupancy of V-3d/O-2p hybrid orbitals were examined by synchrotron characterizations and first-principle theoretical simulations, which explain the formation of stable metallic state. Importantly, the adsorbed molecules protect hydrogen dopants from esca** out of lattice and thereby stabilize the metallic phase for VO2. Such an electron-proton co-do** mechanism driven by suitable molecules absorption would open a new door for engineering properties of correlated oxide materials. △ Less

Submitted 14 September, 2019; v1 submitted 16 January, 2019; originally announced January 2019.

Comments: 25 pages, 5 figures

Journal ref: Angew. Chem. Int. Ed. 58 (2019)13711

Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain

Authors: Alejandro Vega-Flick, Daehwan Jung, Shengying Yue, John E. Bowers, Bolin Liao

Abstract: Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transi… ▽ More Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transient thermal grating technique with ab initio phonon simulations to investigate the in-plane thermal transport of epitaxial GaAs-based buffer layers on Si, employed in the fabrication of III-V quantum dot lasers. Surprisingly, we find a significant reduction of the in-plane thermal conductivity of GaAs, up to 19%, as a result of a small in-plane biaxial stress of 250 MPa. Using ab initio phonon calculations, we attribute this effect to the enhancement of phonon-phonon scattering caused by the in-plane biaxial stress, which breaks the cubic crystal symmetry of GaAs. Our results indicate the importance of eliminating the residual thermal stress in the epitaxial III-V layers on Si to avoid the reduction of thermal conductivity and facilitate heat dissipation. Additionally, our results showcase potential means of effectively controlling thermal conductivity of solids with external strain/stress. △ Less

Submitted 10 January, 2019; originally announced January 2019.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. Materials 3, 034603 (2019)

Ultralow Thermal Conductivity in a Two-Dimensional Material due to Surface Enhanced Resonant Bonding

Authors: Sheng-Ying Yue, Tashi Xu, Bolin Liao

Abstract: Crystalline materials with ultralow thermal conductivity are highly desirable for thermoelectric applications. Many known crystalline materials with low thermal conductivity, including PbTe and Bi2Te3, possess a special kind of chemical bond called "resonant bond". Resonant bonds consist of superposition of degenerate bonding configurations that leads to structural instability, anomalous long-rang… ▽ More Crystalline materials with ultralow thermal conductivity are highly desirable for thermoelectric applications. Many known crystalline materials with low thermal conductivity, including PbTe and Bi2Te3, possess a special kind of chemical bond called "resonant bond". Resonant bonds consist of superposition of degenerate bonding configurations that leads to structural instability, anomalous long-range interatomic interaction and soft optical phonons. These factors contribute to large lattice anharmonicity and strong phonon-phonon scattering, which result in low thermal conductivity. In this work, we use first-principles simulation to investigate the effect of resonant bonding in two dimensions (2D), where resonant bonds are in proximity to the surface. We find that the long-range interatomic interaction due to resonant bonding becomes more prominent in 2D due to reduced screening of the atomic-displacement-induced charge density distortion. To demonstrate this effect, we analyze the phonon properties of quasi-2D Bi2PbTe4 with an ultralow thermal conductivity of 0.74 W/mK at 300K. By comparing the interatomic force constants of quasi-2D Bi2PbTe4 and its bulk counterpart, and the properties of resonant bonds near the surface and in the bulk, we conclude that resonant bonds are significantly enhanced in reduced dimensions and are more effective in reducing the lattice thermal conductivity. Our results will provide new clues to searching for thermal insulators in low-dimensional materials. △ Less

Submitted 20 September, 2018; originally announced September 2018.

Comments: 14 pages,6 figures

Hydrodynamic Phonon Transport Perpendicular to Diffuse-Gray Boundaries

Authors: Runqing Yang, Shengying Yue, Bolin Liao

Abstract: In this paper, we examine the application of an ideal phonon-hydrodynamic material as the heat transfer medium between two non-hydrodynamic contacts with a finite temperature difference. We use the integral-equation approach to solve a modified phonon Boltzmann transport equation with the displaced Bose-Einstein distribution as the equilibrium distribution between two boundaries perpendicular to t… ▽ More In this paper, we examine the application of an ideal phonon-hydrodynamic material as the heat transfer medium between two non-hydrodynamic contacts with a finite temperature difference. We use the integral-equation approach to solve a modified phonon Boltzmann transport equation with the displaced Bose-Einstein distribution as the equilibrium distribution between two boundaries perpendicular to the heat transfer direction. When the distance between the boundaries is smaller than the phonon normal scattering mean free path, our solution converges to the ballistic limit as expected. In the other limit, we find that, although the local thermal conductivity in the bulk of the hydrodynamic material approaches infinity, the thermal boundary resistance at the hydrodynamic/non-hydrodynamic interfaces becomes dominant. Our study provides insights to both the steady-state thermal characterization of phonon-hydrodynamic materials and the practical application of phonon-hydrodynamic materials for thermal management. △ Less

Submitted 8 November, 2018; v1 submitted 19 June, 2018; originally announced June 2018.

Comments: 7 pages, 5 figures

Anisotropic semi-vortices in dipolar spinor condensates controlled by Zeeman splitting

Authors: Bing** Liao, Shoubo Li, Chunqing Huang, Zhihuan Luo, Wei Pang, Haishu Tan, Boris A. Malomed, Yongyao Li

Abstract: Spatially anisotropic solitary vortices (AVSs), supported by anisotropic dipole-dipole interactions, were recently predicted in spin-orbit-coupled binary Bose-Einstein condensates (BECs), in the form of two-dimensional semi-vortices (complexes built of zero-vorticity and vortical components). We demonstrate that the shape of the AVSs -- horizontal or vertical, with respect to the in-plane polariza… ▽ More Spatially anisotropic solitary vortices (AVSs), supported by anisotropic dipole-dipole interactions, were recently predicted in spin-orbit-coupled binary Bose-Einstein condensates (BECs), in the form of two-dimensional semi-vortices (complexes built of zero-vorticity and vortical components). We demonstrate that the shape of the AVSs -- horizontal or vertical, with respect to the in-plane polarization of the atomic dipole moments in the underlying BEC -- may be effectively controlled by strength $Ω$ of the Zeeman splitting (ZS). A transition from the horizontal to vertical shape with the increase of $Ω$ is found numerically and explained analytically. At the transition point, the AVS assumes the shape of an elliptical ring. Mobility of horizontal AVSs is studied too, with a conclusion that, with the increase of $Ω$, their negative effective mass changes the sign into positive via a point at which the effective mass diverges. Lastly, we report a new species of \textit{inverted} AVSs, with the zero-vorticity and vortex component placed in lower- and higher-energy components, as defined by the ZS. They are excited states, with respect to the ground states provided by the usual AVSs. Quite surprisingly, inverted AVSs are stable in a large parameter region. △ Less

Submitted 4 October, 2017; v1 submitted 28 August, 2017; originally announced August 2017.

Comments: 11 pages, 9 figure, 53 references. Physical Review A, in press

Journal ref: Phys. Rev. A 96, 043613 (2017)

Scanning Ultrafast Electron Microscopy: A Novel Technique to Probe Photocarrier Dynamics with High Spatial and Temporal Resolutions

Authors: Bolin Liao, Ebrahim Najafi

Abstract: The dynamics of photo-excited charge carriers, particularly their transport and interactions with defects and interfaces, play an essential role in determining the performance of a wide range of solar and optoelectronic devices. A thorough understanding of these processes requires tracking the motion of photocarriers in both space and time simultaneously with extremely high resolutions, which pose… ▽ More The dynamics of photo-excited charge carriers, particularly their transport and interactions with defects and interfaces, play an essential role in determining the performance of a wide range of solar and optoelectronic devices. A thorough understanding of these processes requires tracking the motion of photocarriers in both space and time simultaneously with extremely high resolutions, which poses a significant challenge for previously developed techniques, mostly based on ultrafast optical spectroscopy. Scanning ultrafast electron microscopy (SUEM) is a recently developed photon-pump-electron-probe technique that combines the spatial resolution of scanning electron microscopes (SEM) and the temporal resolution of femtosecond ultrafast lasers. Despite many recent excellent reviews for the ultrafast electron microscopy, we dedicate this article specifically to SUEM, where we review the working principle and contrast mechanisms of SUEM in the secondary-electron-detection mode from a users' perspective and discuss the applications of SUEM to directly image photocarrier dynamics in various materials. Furthermore, we propose future theoretical and experimental directions for better understanding and fully utilizing the SUEM measurements to obtain detailed information about the dynamics of photocarriers. To conclude, we envision the potential of expanding SUEM into a versatile platform for probing photophysical processes beyond photocarrier dynamics. △ Less

Submitted 3 August, 2017; originally announced August 2017.

Comments: 23 pages, 6 figures

Journal ref: Materials Today Physics, 2, 46 (2017)

Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus

Authors: Bolin Liao, Huan Zhao, Ebrahim Najafi, Xiaodong Yan, He Tian, Jesse Tice, Austin J. Minnich, Han Wang, Ahmed H. Zewail

Abstract: As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its widely tunable bandgap, polarization dependent photoresponse and highly anisotropic in-plane charge transport. Despite extensive study of the steady-state charge t… ▽ More As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its widely tunable bandgap, polarization dependent photoresponse and highly anisotropic in-plane charge transport. Despite extensive study of the steady-state charge transport in BP, there has not been direct characterization and visualization of the hot carriers dynamics in BP immediately after photoexcitation, which is crucial to understanding the performance of BP-based optoelectronic devices. Here we use the newly developed scanning ultrafast electron microscopy (SUEM) to directly visualize the motion of photo-excited hot carriers on the surface of BP in both space and time. We observe highly anisotropic in-plane diffusion of hot holes, with a 15-times higher diffusivity along the armchair (x-) direction than that along the zigzag (y-) direction. Our results provide direct evidence of anisotropic hot carrier transport in BP and demonstrate the capability of SUEM to resolve ultrafast hot carrier dynamics in layered two-dimensional materials. △ Less

Submitted 19 February, 2017; originally announced February 2017.

Comments: 21 pages, 6 figures

Dynamics of Photo-excited Hot Carriers in Hydrogenated Amorphous Silicon Imaged by 4D Electron Microscopy

Authors: Bolin Liao, Ebrahim Najafi, Heng Li, Austin J. Minnich, Ahmed H. Zewail

Abstract: The dynamics of charge carriers in amorphous semiconductors fundamentally differ from those in crystalline semiconductors due to the lack of long-range order and the high defect density. Despite intensive technology-driven research interests and the existence of well-established experimental techniques, such as photoconductivity time-of-flight and ultrafast optical measurements, many aspects of th… ▽ More The dynamics of charge carriers in amorphous semiconductors fundamentally differ from those in crystalline semiconductors due to the lack of long-range order and the high defect density. Despite intensive technology-driven research interests and the existence of well-established experimental techniques, such as photoconductivity time-of-flight and ultrafast optical measurements, many aspects of the dynamics of photo-excited charge carriers in amorphous semiconductors remain poorly understood. Here we demonstrate direct imaging of carrier dynamics in space and time after photo-excitation in hydrogenated amorphous silicon (a-Si:H) by scanning ultrafast electron microscopy (SUEM). We observe an unexpected regime of fast diffusion immediately after photoexcitation along with spontaneous electron-hole separation and charge trap** induced by the atomic disorder. Our findings demonstrate the rich dynamics of hot carrier transport in amorphous semiconductors that can be revealed by direct imaging based on SUEM. △ Less

Submitted 10 October, 2016; originally announced October 2016.

Entropic and Near-Field Improvements of Thermoradiative Cells

Authors: Wei-Chun Hsu, Jonathan K. Tong, Bolin Liao, Yi Huang, Svetlana V. Boriskina, Gang Chen

Abstract: A p-n junction maintained at above ambient temperature can work as a heat engine, converting some of the supplied heat into electricity and rejecting entropy by interband emission. Such thermoradiative cells have potential to harvest low-grade heat into electricity. By analyzing the entropy content of different spectral components of thermal radiation, we identify an approach to increase the effic… ▽ More A p-n junction maintained at above ambient temperature can work as a heat engine, converting some of the supplied heat into electricity and rejecting entropy by interband emission. Such thermoradiative cells have potential to harvest low-grade heat into electricity. By analyzing the entropy content of different spectral components of thermal radiation, we identify an approach to increase the efficiency of thermoradiative cells via spectrally selecting long-wavelength photons for radiative exchange. Furthermore, we predict that the near-field photon extraction by coupling photons generated from interband electronic transition to phonon polariton modes on the surface of a heat sink can increase the conversion efficiency as well as the power generation density, providing more opportunities to efficiently utilize terrestrial emission for clean energy. An ideal InSb thermoradiative cell can achieve a maximum efficiency and power density up to 20.4 % and 327 Wm-2, respectively, between a hot source at 500K and a cold sink at 300K. However, sub-bandgap and non-radiative losses will significantly degrade the cell performance. △ Less

Submitted 16 September, 2016; v1 submitted 29 June, 2016; originally announced June 2016.

Journal ref: Scientific Reports 6, Article number: 34837 (2016)

First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs

Authors: Te-Huan Liu, Jiawei Zhou, Bolin Liao, David J. Singh, Gang Chen

Abstract: We present a first-principles framework to investigate the electron scattering channels and transport properties for polar material by combining the exact solution of linearized electron-phonon (e-ph) Boltzmann transport equation in its integral-differential form associated with the e-ph coupling matrices obtained from polar Wannier interpolation scheme. No ad hoc parameter is required throughout… ▽ More We present a first-principles framework to investigate the electron scattering channels and transport properties for polar material by combining the exact solution of linearized electron-phonon (e-ph) Boltzmann transport equation in its integral-differential form associated with the e-ph coupling matrices obtained from polar Wannier interpolation scheme. No ad hoc parameter is required throughout this calculation, and GaAs, a well-studied polar material, is used as an example to demonstrate this method. In this work, the long-range and short-range contributions as well as the intravalley and intervalley transitions in the e-ph interactions (EPIs) have been quantitatively addressed. Promoted by such mode-by-mode analysis, we find that in GaAs, the piezoelectric scattering is comparable to deformation-potential scattering for electron scatterings by acoustic phonons in EPI even at room temperature and makes a significant contribution to mobility. Furthermore, we achieved good agreements with experimental data for the mobility, and identified that electrons with mean free paths between 130 and 210 nm contribute dominantly to the electron transport at 300 K. Such information provides deeper understandings on the electron transport in GaAs, and the presented framework can be readily applied to other polar materials. △ Less

Submitted 15 November, 2016; v1 submitted 22 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 95, 075206 (2017)

Heat meets light on the nanoscale

Authors: Svetlana V. Boriskina, Jonathan K. Tong, Wei-Chun Hsu, Bolin Liao, Yi Huang, Vazrik Chiloyan, Gang Chen

Abstract: We discuss the state-of-the-art and remaining challenges in the fundamental understanding and technology development for controlling light-matter interactions in nanophotonic environments in and away from thermal equilibrium. The topics covered range from the basics of the thermodynamics of light emission and absorption, to applications in solar-thermal energy generation, thermophotovoltaics, opti… ▽ More We discuss the state-of-the-art and remaining challenges in the fundamental understanding and technology development for controlling light-matter interactions in nanophotonic environments in and away from thermal equilibrium. The topics covered range from the basics of the thermodynamics of light emission and absorption, to applications in solar-thermal energy generation, thermophotovoltaics, optical refrigeration, personalized cooling technologies, development of coherent incandescent light sources, and spinoptics. △ Less

Submitted 27 April, 2016; originally announced April 2016.

Comments: 46 pages, 11 figures; to appear in the special issue of Nanophotonics on 'Smart nanophotonics for renewable energy and sustainability' 2016

Limiting efficiencies of solar energy conversion and photo-detection via internal emission of hot electrons and hot holes in gold

Authors: Svetlana V. Boriskina, Jiawei Zhou, Wei-Chun Hsu, Bolin Liao, Gang Chen

Abstract: We evaluate the limiting efficiency of full and partial solar spectrum harvesting via the process of internal photoemission in Au-semiconductor Schottky junctions. Our results based on the ab initio calculations of the electron density of states (e-DOS) reveal that the limiting efficiency of the full-spectrum Au converter based on hot electron injection is below 4%. This value is even lower than p… ▽ More We evaluate the limiting efficiency of full and partial solar spectrum harvesting via the process of internal photoemission in Au-semiconductor Schottky junctions. Our results based on the ab initio calculations of the electron density of states (e-DOS) reveal that the limiting efficiency of the full-spectrum Au converter based on hot electron injection is below 4%. This value is even lower than previously established limit based on the parabolic approximation of the Au electron energy bands. However, we predict limiting efficiency exceeding 10% for the hot holes collection through the Schottky junction between Au and p-type semiconductor. Furthermore, we demonstrate that such converters have more potential if used as a part of the hybrid system for harvesting high- and low-energy photons of the solar spectrum. △ Less

Submitted 8 September, 2015; originally announced September 2015.

Comments: Proc. SPIE 9608, Infrared Remote Sensing and Instrumentation XXIII, 960816 (September 1, 2015) 7 pages, 4 figures

Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion

Authors: Jiawei Zhou, Bolin Liao, Bo Qiu, Samuel Huberman, Keivan Esfarjani, Mildred S. Dresselhaus, Gang Chen

Abstract: While the thermoelectric figure of merit zT above 300K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time, success in first-principles computation of the phonon drag effect - a coupling phenomenon between electrons and non-equilibrium… ▽ More While the thermoelectric figure of merit zT above 300K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time, success in first-principles computation of the phonon drag effect - a coupling phenomenon between electrons and non-equilibrium phonons - in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that while the phonon drag is reduced in heavily-doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to around 0.25, and the enhancement can reach 70 times at 100K. This work opens up a new venue towards better thermoelectrics by harnessing non-equilibrium phonons. △ Less

Submitted 1 October, 2015; v1 submitted 31 August, 2015; originally announced August 2015.

Ab initio study of electron-phonon interaction in phosphorene

Authors: Bolin Liao, Jiawei Zhou, Bo Qiu, Mildred S. Dresselhaus, Gang Chen

Abstract: The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport properties so far rely on the deformation potential approximation, which is in general not directly applicable to anisotropic materials since the deformation along one s… ▽ More The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport properties so far rely on the deformation potential approximation, which is in general not directly applicable to anisotropic materials since the deformation along one specific direction can scatter electrons traveling in all directions. We perform a first-principles calculation of the electron-phonon interaction in phosphorene based on density functional perturbation theory and Wannier interpolation. Our calculation reveals that 1) the high anisotropy provides extra phase space for electron-phonon scattering, and 2) optical phonons have appreciable contributions. Both effects cannot be captured by the deformation potential calculations. △ Less

Submitted 19 March, 2015; v1 submitted 15 October, 2014; originally announced October 2014.

Comments: 25 pages, 15 figures

Journal ref: Phys. Rev. B 91, 235419 (2015)

First-Principles Simulation of Electron Mean-Free-Path Spectra and Thermoelectric Properties in Silicon

Authors: Bo Qiu, Zhiting Tian, Ajit Vallabhaneni, Bolin Liao, Jonathan M. Mendoza, Oscar D. Restrepo, Xiulin Ruan, Gang Chen

Abstract: The mean-free-paths (MFPs) of energy carriers are of critical importance to the nano-engineering of better thermoelectric materials. Despite significant progress in the first-principles-based understanding of the spectral distribution of phonon MFPs in recent years, the spectral distribution of electron MFPs remains unclear. In this work, we compute the energy dependent electron scatterings and MF… ▽ More The mean-free-paths (MFPs) of energy carriers are of critical importance to the nano-engineering of better thermoelectric materials. Despite significant progress in the first-principles-based understanding of the spectral distribution of phonon MFPs in recent years, the spectral distribution of electron MFPs remains unclear. In this work, we compute the energy dependent electron scatterings and MFPs in silicon from first-principles. The electrical conductivity accumulation with respect to electron MFPs is compared to that of the phonon thermal conductivity accumulation to illustrate the quantitative impact of nanostructuring on electron and phonon transport. By combining all electron and phonon transport properties from first-principles, we predict the thermoelectric properties of the bulk and nanostructured silicon, and find that silicon with 20 nm nanograins can result in more than five times enhancement in their thermoelectric figure of merit as the grain boundaries scatter phonons more significantly than that of electrons due to their disparate MFP distributions. △ Less

Submitted 4 February, 2015; v1 submitted 16 September, 2014; originally announced September 2014.

Significant reduction of lattice thermal conductivity by electron-phonon interaction in silicon with high carrier concentrations: a first-principles study

Authors: Bolin Liao, Bo Qiu, Jiawei Zhou, Samuel Huberman, Keivan Esfarjani, Gang Chen

Abstract: Electron-phonon interaction has been well known to create major resistance to electron transport in metals and semiconductors, whereas less studies were directed to its effect on the phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction,… ▽ More Electron-phonon interaction has been well known to create major resistance to electron transport in metals and semiconductors, whereas less studies were directed to its effect on the phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first-principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 1e19 cm-3 (the reduction reaches up to 45% in p-type silicon at around 1e21 cm-3), a range of great technological relevance to thermoelectric materials. △ Less

Submitted 3 September, 2014; originally announced September 2014.

Comments: 19 pages, 5 figures

Journal ref: Phys. Rev. Lett. 114, 115901 (2015)

Generalized two-temperature model for coupled phonon-magnon diffusion

Authors: Bolin Liao, Jiawei Zhou, Gang Chen

Abstract: We generalize the two-temperature model [Sanders and Walton, Phys. Rev. B, 15, 1489 (1977)] for coupled phonon-magnon diffusion to include the effect of the concurrent magnetization flow. Working within the framework of Boltzmann transport equation, we derive the constitutive equations for coupled phonon-magnon transport driven by gradients of both temperature and external magnetic fields, and the… ▽ More We generalize the two-temperature model [Sanders and Walton, Phys. Rev. B, 15, 1489 (1977)] for coupled phonon-magnon diffusion to include the effect of the concurrent magnetization flow. Working within the framework of Boltzmann transport equation, we derive the constitutive equations for coupled phonon-magnon transport driven by gradients of both temperature and external magnetic fields, and the corresponding conservation laws. Our equations reduce to the original Sanders-Walton two-temperature model under a uniform external field, but predict a new magnon cooling effect driven by a non-uniform magnetic field in a homogeneous single-domain ferromagnet. We estimate the magnitude of the cooling effect in yttrium iron garnet, and show it is within current experimental reach. With properly optimized materials, the predicted cooling effect can potentially supplement the conventional magnetocaloric effect in cryogenic applications in the future. △ Less

Submitted 2 March, 2014; originally announced March 2014.

Comments: 17 pages, 6 figures

Journal ref: Phys. Rev. Lett. 113, 025902 (2014)