Showing 1–50 of 121 results for author: Liang, S

Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor

Authors: Junlin Xiong, Jiao Xie, Bin Cheng, Yudi Dai, Xinyu Cui, Lizheng Wang, Zenglin Liu, Ji Zhou, Naizhou Wang, Xianghan Xu, Xianhui Chen, Sang-Wook Cheong, Shi-Jun Liang, Feng Miao

Abstract: Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonr… ▽ More Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonreciprocity remains yet to be achieved. Here, we report the observation of field-free electrical switching of nonreciprocal Ising superconductivity in Fe3GeTe2/NbSe2 van der Waals (vdW) heterostructure. By taking advantage of this electrically switchable superconducting nonreciprocity, we demonstrate a proof-of-concept nonreciprocal quantum neuronal transistor, which allows for implementing the XOR logic gate and faithfully emulating biological functionality of a cortical neuron in the brain. Our work provides a promising pathway to realize field-free and electrically switchable nonreciprocity of quantum transport and demonstrate its potential in exploring neuromorphic quantum devices with both functionality and performance beyond the traditional devices. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Journal ref: Nature Communications 15, 4953 (2024)

Link between cascade transitions and correlated Chern insulators in magic-angle twisted bilayer graphene

Authors: Qianying Hu, Shu Liang, Xinheng Li, Hao Shi, Xi Dai, Yang Xu

Abstract: Chern insulators are topologically non-trivial states of matter characterized by incompressible bulk and chiral edge states. Incorporating topological Chern bands with strong electronic correlations provides a versatile playground for studying emergent quantum phenomena. In this study, we resolve the correlated Chern insulators (CCIs) in magic-angle twisted bilayer graphene (MATBG) through Rydberg… ▽ More Chern insulators are topologically non-trivial states of matter characterized by incompressible bulk and chiral edge states. Incorporating topological Chern bands with strong electronic correlations provides a versatile playground for studying emergent quantum phenomena. In this study, we resolve the correlated Chern insulators (CCIs) in magic-angle twisted bilayer graphene (MATBG) through Rydberg exciton sensing spectroscopy, and unveil their direct link with the zero-field cascade features in the electronic compressibility. The compressibility minima in the cascade are found to deviate substantially from nearby integer fillings (by $Δν$) and coincide with the onsets of CCIs in do** densities, yielding a quasi-universal relation $B_c$=$Φ_0Δν/C$ (onset magnetic field $B_c$, magnetic flux quantum $Φ_0$ and Chern number $C$). We suggest these onsets lie on the intersection where the integer filling of localized "f-orbitals" and Chern bands are simultaneously reached. Our findings update the field-dependent phase diagram of MATBG and directly support the topological heavy fermion model. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Comments: 24 pages, 4 figures, supplementary material

Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

Authors: Yudi Dai, Junlin Xiong, Yanfeng Ge, Bin Cheng, Lizheng Wang, Pengfei Wang, Zenglin Liu, Shengnan Yan, Cuiwei Zhang, Xianghan Xu, Youguo Shi, Sang-Wook Cheong, Cong Xiao, Shengyuan A. Yang, Shi-Jun Liang, Feng Miao

Abstract: The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mecha… ▽ More The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing. △ Less

Submitted 26 March, 2024; originally announced March 2024.

Journal ref: Nature Communications 15, 1129 (2024)

Thermal Tensor Network Approach for Spin-Lattice Relaxation in Quantum Magnets

Authors: Ning Xi, Yuan Gao, Chengchen Li, Shuang Liang, Rong Yu, Xiaoqun Wang, Wei Li

Abstract: Low-dimensional quantum magnets, particularly those with strong spin frustration, are characterized by their notable spin fluctuations. Nuclear magnetic resonance (NMR) serves as a sensitive probe of low-energy fluctuations that offers valuable insight into rich magnetic phases and emergent phenomena in quantum magnets. Although experimentally accessible, the numerical simulation of NMR relaxation… ▽ More Low-dimensional quantum magnets, particularly those with strong spin frustration, are characterized by their notable spin fluctuations. Nuclear magnetic resonance (NMR) serves as a sensitive probe of low-energy fluctuations that offers valuable insight into rich magnetic phases and emergent phenomena in quantum magnets. Although experimentally accessible, the numerical simulation of NMR relaxation rates, specifically the spin-lattice relaxation rate $1/T_1$, remains a significant challenge. Analytical continuation based on Monte Carlo calculations are hampered by the notorious negative sign for frustrated systems, and the real-time simulations incur significant costs to capture low-energy fluctuations. Here we propose computing the relaxation rate using thermal tensor networks (TTNs), which provides a streamlined approach by calculating its imaginary-time proxy. We showcase the accuracy and versatility of our methodology by applying it to one-dimensional spin chains and two-dimensional lattices, where we find that the critical exponents $η$ and $zν$ can be extracted from the low-temperature scalings of the simulated $1/T_1$ near quantum critical points. Our results also provide insights into the low-dimensional and frustrated magnetic materials, elucidating universal scaling behaviors in the Ising chain compound CoNb$_2$O$_6$ and revealing the renormalized classical behaviors in the triangular-lattice antiferromagnet Ba$_8$CoNb$_6$O$_{24}$. We apply the approach to effective model of the family of frustrated magnets AYbCh$_2$ (A = Na, K, Cs, and Ch = O, S, Se), and find dramatic changes from spin ordered to the proposed quantum spin liquid phase. Overall, with high reliability and accuracy, the TTN methodology offers a systematic strategy for studying the intricate dynamics observed across a broad spectrum of quantum magnets and related fields. △ Less

Submitted 20 March, 2024; v1 submitted 18 March, 2024; originally announced March 2024.

Comments: 15 pages, 12 figures

Zero modes of velocity field and topological invariant in quantum torus

Authors: Annan Fan, Shi-Dong Liang

Abstract: We propose the velocity field approach to characterize topological invariants of quantum states. We introduce the indexes of the velocity field flow based on the zero modes of the velocity field and find that these zero modes play the role of effective topological charges or defects linking to Euler characteristic by the Poincaré-Hopf theorem. The global property of the indexes is topological inva… ▽ More We propose the velocity field approach to characterize topological invariants of quantum states. We introduce the indexes of the velocity field flow based on the zero modes of the velocity field and find that these zero modes play the role of effective topological charges or defects linking to Euler characteristic by the Poincaré-Hopf theorem. The global property of the indexes is topological invariants against the parameter deformation. We demonstrate this approach by the quantum torus model and compare the topological invariant with that obtained from the Chern number. We find that the physical mechanism of the topological invariant based on the zero modes of the velocity field is different from that of the topological invariant by the Chern number. The topological invariant characterized by the velocity field describes a homeomorphic topological invariant associated with the zero modes on the submanifold of the base manifold of the SU(2)-fibre bundle for quantum torus, whereas the Chern number characterizes a homotopy invariant associated with the exceptional points in the Brillouin zone. We also propose the generalized winding number in terms of the velocity field for both Hermitian and non-Hermitian systems. This gives a connection between the zero mode and winding number in the velocity space. These results enrich the topological invariants of quantum states and promises us a novel insight to understanding topological invariants of quantum states as well as expected to be further applied in more generic models. △ Less

Submitted 13 March, 2024; originally announced March 2024.

Comments: 13 pages, 2 figures

Journal ref: Results in Physics 31 (2021) 104912

Electrical 180o switching of Néel vector in spin-splitting antiferromagnet

Authors: Lei Han, Xizhi Fu, Rui Peng, Xingkai Cheng, Jiankun Dai, Liangyang Liu, Yidian Li, Yichi Zhang, Wenxuan Zhu, Hua Bai, Yongjian Zhou, Shixuan Liang, Chong Chen, Qian Wang, Xianzhe Chen, Luyi Yang, Yang Zhang, Cheng Song, Junwei Liu, Feng Pan

Abstract: Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for develo** electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However… ▽ More Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for develo** electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet. △ Less

Submitted 31 January, 2024; originally announced January 2024.

Comments: 19 pages, 4 figures

Journal ref: Sci. Adv. 10, eadn0479 (2024)

Non-Hermitian delocalization in a 2D photonic quasicrystal

Authors: Zhaoyang Zhang, Shun Liang, Ismael Septembre, Jiawei Yu, Yong** Huang, Maochang Liu, Yanpeng Zhang, Min Xiao, Guillaume Malpuech, Dmitry Solnyshkov

Abstract: Quasicrystals show long-range order, but lack translational symmetry. So far, theoretical and experimental studies suggest that both Hermitian and non-Hermitian quasicrystals show localized eigenstates. This localization is due to the fractal structure of the spectrum in the Hermitian case and to the transition to diffusive bands via exceptional points in the non-Hermitian case. Here, we present a… ▽ More Quasicrystals show long-range order, but lack translational symmetry. So far, theoretical and experimental studies suggest that both Hermitian and non-Hermitian quasicrystals show localized eigenstates. This localization is due to the fractal structure of the spectrum in the Hermitian case and to the transition to diffusive bands via exceptional points in the non-Hermitian case. Here, we present an experimental study of a dodecagonal (12-fold) photonic quasicrystal based on electromagnetically-induced transparency in a Rb vapor cell. The transition to a quasicrystal is obtained by superposing two honeycomb lattices at 30$^\circ$ with a continuous tuning of their amplitudes. Non-Hermiticity is controlled independently. We study the spatial expansion of a probe wavepacket. In the Hermitian case, the wavepacket expansion is suppressed when the amplitude of the second lattice is increased (quasicrystal localization). We find a new regime, where increasing the non-Hermitian potential in the quasicrystal enhances spatial expansion, with the $C_{12}$ symmetry becoming visible in the wavepacket structure. This real-space expansion is due to a k-space localization on specific quasicrystal modes. Our results show that the non-Hermitian quasicrystal behavior is richer than previously thought. The localization properties of the quasicrystals can be used for beam tailoring in photonics, but are also important in other fields. △ Less

Submitted 14 December, 2023; originally announced December 2023.

A Minimal Model for Carnot Efficiency at Maximum Power

Authors: Shiling Liang, Yu-Han Ma, Daniel Maria Busiello, Paolo De Los Rios

Abstract: Carnot efficiency sets a fundamental upper bound on the heat engine efficiency, attainable in the quasi-static limit, albeit at the cost of completely sacrificing power output. In this Letter, we present a minimal heat engine model that can attain Carnot efficiency while achieving maximum power output. We unveil the potential of intrinsic divergent physical quantities within the working substance,… ▽ More Carnot efficiency sets a fundamental upper bound on the heat engine efficiency, attainable in the quasi-static limit, albeit at the cost of completely sacrificing power output. In this Letter, we present a minimal heat engine model that can attain Carnot efficiency while achieving maximum power output. We unveil the potential of intrinsic divergent physical quantities within the working substance, such as degeneracy, as promising thermodynamic resources to break through the universal power-efficiency trade-off imposed by nonequilibrium thermodynamics for conventional heat engines. Our findings provide novel insights into the collective advantage in harnessing energy of many-body interacting systems. △ Less

Submitted 9 July, 2024; v1 submitted 4 December, 2023; originally announced December 2023.

Comments: 6+6 pages, 4 figures

General-purpose machine-learned potential for 16 elemental metals and their alloys

Authors: Keke Song, Rui Zhao, Jiahui Liu, Yanzhou Wang, Eric Lindgren, Yong Wang, Shunda Chen, Ke Xu, Ting Liang, Penghua Ying, Nan Xu, Zhiqiang Zhao, Jiuyang Shi, Junjie Wang, Shuang Lyu, Zezhu Zeng, Shirong Liang, Haikuan Dong, Ligang Sun, Yue Chen, Zhuhua Zhang, Wanlin Guo, ** Qian, Jian Sun, Paul Erhart , et al. (3 additional authors not shown)

Abstract: Machine-learned potentials (MLPs) have exhibited remarkable accuracy, yet the lack of general-purpose MLPs for a broad spectrum of elements and their alloys limits their applicability. Here, we present a feasible approach for constructing a unified general-purpose MLP for numerous elements, demonstrated through a model (UNEP-v1) for 16 elemental metals and their alloys. To achieve a complete repre… ▽ More Machine-learned potentials (MLPs) have exhibited remarkable accuracy, yet the lack of general-purpose MLPs for a broad spectrum of elements and their alloys limits their applicability. Here, we present a feasible approach for constructing a unified general-purpose MLP for numerous elements, demonstrated through a model (UNEP-v1) for 16 elemental metals and their alloys. To achieve a complete representation of the chemical space, we show, via principal component analysis and diverse test datasets, that employing one-component and two-component systems suffices. Our unified UNEP-v1 model exhibits superior performance across various physical properties compared to a widely used embedded-atom method potential, while maintaining remarkable efficiency. We demonstrate our approach's effectiveness through reproducing experimentally observed chemical order and stable phases, and large-scale simulations of plasticity and primary radiation damage in MoTaVW alloys. This work represents a significant leap towards a unified general-purpose MLP encompassing the periodic table, with profound implications for materials science. △ Less

Submitted 12 June, 2024; v1 submitted 8 November, 2023; originally announced November 2023.

Comments: Main text with 17 pages and 8 figures; supplementary with 26 figures and 4 tables; source code and training/test data available

Moire synaptic transistor for homogeneous-architecture reservoir computing

Authors: Pengfei Wang, Moyu Chen, Yongqin Xie, Chen Pan, Kenji Watanabe, Takashi Taniguchi, Bin Cheng, Shi-Jun Liang, Feng Miao

Abstract: Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to implement the reservoir and the readout layer of reservoir computing system. Two-dimensional moire material, with an artificial lattice constant many times lar… ▽ More Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to implement the reservoir and the readout layer of reservoir computing system. Two-dimensional moire material, with an artificial lattice constant many times larger than the atomic length scale, is one type of most studied artificial quantum materials in community of material science and condensed-matter physics over the past years. These materials are featured with gate-tunable periodic potential and electronic correlation, thus varying the electric field allows the electrons in the moire potential per unit cell to exhibit distinct and reproducible dynamics, showing great promise in robust reservoir computing. Here, we report that a moire synaptic transistor can be used to implement the reservoir computing system with a homogeneous reservoir-readout architecture. The synaptic transistor is fabricated based on a h-BN/bilayer graphene/h-BN moire heterostructure, exhibiting ferroelectricity-like hysteretic gate voltage dependence of resistance. Varying the magnitude of the gate voltage enables the moire transistor to be switched between long-term memory and short-term memory with nonlinear dynamics. By employing the short- and long-term memory as the reservoir nodes and weights of the readout layer, respectively, we construct a full-moire physical neural network and demonstrate that the classification accuracy of 90.8% can be achieved for the MNIST handwritten digit database. Our work would pave the way towards the development of neuromorphic computing based on the moire materials. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Journal ref: Chin. Phys. Lett. 2023 40 (11): 117201

Thermodynamic bounds on time-reversal asymmetry

Authors: Shiling Liang, Simone Pigolotti

Abstract: Quantifying irreversibility of a system using finite information constitutes a major challenge in stochastic thermodynamics. We introduce an observable that measures the time-reversal asymmetry between two states after a given time lag. Our central result is a bound on the time-reversal asymmetry in terms of the total cycle affinity driving the system out of equilibrium. This result leads to furth… ▽ More Quantifying irreversibility of a system using finite information constitutes a major challenge in stochastic thermodynamics. We introduce an observable that measures the time-reversal asymmetry between two states after a given time lag. Our central result is a bound on the time-reversal asymmetry in terms of the total cycle affinity driving the system out of equilibrium. This result leads to further thermodynamic bounds on the asymmetry of directed fluxes; on the asymmetry of finite-time cross-correlations; and on the cycle affinity of coarse-grained dynamics. △ Less

Submitted 16 November, 2023; v1 submitted 28 August, 2023; originally announced August 2023.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. E 108, L062101 (2023)

Multimode Ultrastrong Coupling in Three-Dimensional Photonic-Crystal Cavities

Authors: Fuyang Tay, Ali Mojibpour, Stephen Sanders, Shuang Liang, Hong**g Xu, Geoff C. Gardner, Andrey Baydin, Michael J. Manfra, Alessandro Alabastri, David Hagenmüller, Junichiro Kono

Abstract: Recent theoretical studies have highlighted the role of spatially varying cavity electromagnetic fields in exploring novel cavity quantum electrodynamics (cQED) phenomena, such as the potential realization of the elusive Dicke superradiant phase transition. One-dimensional photonic-crystal cavities (PCCs), widely used for studying solid-state cQED systems, have uniform spatial profiles in the late… ▽ More Recent theoretical studies have highlighted the role of spatially varying cavity electromagnetic fields in exploring novel cavity quantum electrodynamics (cQED) phenomena, such as the potential realization of the elusive Dicke superradiant phase transition. One-dimensional photonic-crystal cavities (PCCs), widely used for studying solid-state cQED systems, have uniform spatial profiles in the lateral plane. Three-dimensional (3D) PCCs, which exhibit discrete in-plane translational symmetry, overcome this limitation, but fabrication challenges have hindered the achievement of strong coupling in 3D-PCCs. Here, we report the realization of multimode ultrastrong coupling in a 3D-PCC at terahertz frequencies. The multimode coupling between the 3D-PCC's cavity modes and the cyclotron resonance of a Landau-quantized two-dimensional electron gas in GaAs is significantly influenced by the spatial profiles of the cavity modes, leading to distinct coupling scenarios depending on the probe polarization. Our experimental results are in excellent agreement with a multimode extended Hopfield model that accounts for the spatial inhomogeneity of the cavity field. Guided by the model, we discuss the possible strong ground-state correlations between different cavity modes and introduce relevant figures of merit for the multimode ultrastrong coupling regime. Our findings emphasize the importance of spatially nonuniform cavity mode profiles in probing nonintuitive quantum phenomena expected for the ground states of cQED systems in the ultrastrong coupling regime. △ Less

Submitted 8 July, 2024; v1 submitted 23 August, 2023; originally announced August 2023.

Comments: 36 pages, 13 figures

Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection

Authors: Xukun Feng, Chit Siong Lau, Shi-Jun Liang, Ching Hua Lee, Shengyuan A. Yang, Yee Sin Ang

Abstract: Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here we generalize the concept of metal/semiconductor (MS) contact into the realm of valleytronics. We propose a half-valley Ohmic contact… ▽ More Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here we generalize the concept of metal/semiconductor (MS) contact into the realm of valleytronics. We propose a half-valley Ohmic contact based on FVSC/graphene heterostructure where the two valleys of FVSC separately forms Ohmic and Schottky contacts with those of graphene, thus allowing current to be valley-selectively injected through the `Ohmic' valley while being blocked in the `Schottky' valley. We develop a theory of contact-limited valley-contrasting current injection and demonstrate that such transport mechanism can produce gate-tunable valley-polarized injection current. Using RuCl$_2$/graphene heterostructure as an example, we illustrate a device concept of valleytronic barristor where high valley polarization efficiency and sizable current on/off ratio, can be achieved under experimentally feasible electrostatic gating conditions. These findings uncover contact-limited valley-contrasting current injection as an efficient mechanism for valley polarization manipulation, and reveals the potential of valleytronic MS contact as a functional building block of valleytronic device technology. △ Less

Submitted 9 August, 2023; v1 submitted 7 August, 2023; originally announced August 2023.

Comments: 9 pages, 5 figures

Stochastic pole expansion method

Authors: Li Huang, Shuang Liang

Abstract: In this paper, we propose a new analytic continuation method to extract real frequency spectral functions from imaginary frequency Green's functions of quantum many-body systems. This method is based on the pole representation of Matsubara Green's function and a stochastic sampling procedure is utilized to optimize the amplitudes and locations of poles. In order to capture narrow peaks and sharp b… ▽ More In this paper, we propose a new analytic continuation method to extract real frequency spectral functions from imaginary frequency Green's functions of quantum many-body systems. This method is based on the pole representation of Matsubara Green's function and a stochastic sampling procedure is utilized to optimize the amplitudes and locations of poles. In order to capture narrow peaks and sharp band edges in the spectral functions, a constrained sampling algorithm and a self-adaptive sampling algorithm are developed. To demonstrate the usefulness and performance of the new method, we at first apply it to study the spectral functions of representative fermionic and bosonic correlators. Then we employ this method to tackle the analytic continuation problems of matrix-valued Green's functions. The synthetic Green's functions, as well as realistic correlation functions from finite temperature quantum many-body calculations, are used as input. The benchmark results demonstrate that this method is capable of reproducing most of the key characteristics in the spectral functions. The sharp, smooth, and multi-peak features in both low-frequency and high-frequency regions of spectral functions could be accurately resolved, which overcomes one of the main limitations of the traditional maximum entropy method. More importantly, it exhibits excellent robustness with respect to noisy and incomplete input data. The causality of spectral function is always satisfied even in the presence of sizable noises. As a byproduct, this method could derive a fitting formula for the Matsubara data, which provides a compact approximation to the many-body Green's functions. Hence, we expect that this new method could become a pivotal workhorse for numerically analytic continuation and be broadly useful in many applications. △ Less

Submitted 20 July, 2023; originally announced July 2023.

Comments: 26 pages, 20 figures

Journal ref: Phys. Rev. B 108, 235143 (2023)

Fabry-Perot interferometry at the $ν$ = 2/5 fractional quantum Hall state

Authors: James Nakamura, Shuang Liang, Geoffrey C. Gardner, Michael J. Manfra

Abstract: Electronic Fabry-P{é}rot interferometry is a powerful method to probe quasiparticle charge and anyonic braiding statistics in the fractional quantum Hall regime. We extend this technique to the hierarchy $ν= 2/5$ fractional quantum Hall state, possessing two edge modes that in our device can be interfered independently. The outer edge mode exhibits interference similar to the behavior observed at… ▽ More Electronic Fabry-P{é}rot interferometry is a powerful method to probe quasiparticle charge and anyonic braiding statistics in the fractional quantum Hall regime. We extend this technique to the hierarchy $ν= 2/5$ fractional quantum Hall state, possessing two edge modes that in our device can be interfered independently. The outer edge mode exhibits interference similar to the behavior observed at the $ν= 1/3$ state, indicating that the outer edge mode at $ν= 2/5$ has properties similar to the single mode at $ν= 1/3$. The inner mode shows an oscillation pattern with a series of discrete phase jumps indicative of distinct anyonic braiding statistics. After taking into account the impact of bulk-edge coupling, we extract an interfering quasiparticle charge ${e^*} = 0.17 \pm 0.02$ and anyonic braiding phase $θ_a = (-0.43 \pm 0.05)\times 2π$, which serve as experimental verification of the theoretically predicted values of $e^* = \frac{1}{5}$ and $θ_a = -\frac{4π}{5}$. △ Less

Submitted 24 April, 2023; originally announced April 2023.

Comments: 10+12 pages, 6+12 figures

MA$_2$Z$_4$ Family Heteorstructures: Promises and Prospects

Authors: Che Chen Tho, San-Dong Guo, Shi-Jun Liang, Wee-Liat Ong, Chit Siong Lau, Liemao Cao, Guangzhao Wang, Yee Sin Ang

Abstract: Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition metal nitride (Mo-N) inner sub-monolayer sandwiched by two silicon nitride (Si-N) outer sub-monolayers - have motivated the computational discovery of an expansive family of synthetic MA2Z4 monolayers with no bulk (3D) mater… ▽ More Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition metal nitride (Mo-N) inner sub-monolayer sandwiched by two silicon nitride (Si-N) outer sub-monolayers - have motivated the computational discovery of an expansive family of synthetic MA2Z4 monolayers with no bulk (3D) material counterpart (where M = transition metals or alkaline earth metals; A = Si, Ge; and N = N, P, As). MA2Z4 monolayers exhibit interesting electronic, magnetic, optical, spintronic, valleytronic and topological properties, making them a compelling material platform for next-generation device technologies. Furthermore, heterostructure engineering enormously expands the opportunities of MA2Z4. In this review, we summarize the recent rapid progress in the computational design of MA2Z4-based heterostructures based on first-principle density functional theory (DFT) simulations - a central \emph{work horse} widely used to understand the physics, chemistry and general design rules for specific targeted functions. We systematically classify the MA2Z4-based heterostructures based on their contact types, and review their physical properties, with a focus on their performances in electronics, optoelectronics and energy conversion applications. We review the performance and promises of MA2Z4-based heterostructures for device applications that include electrical contacts, transistors, spintronic devices, photodetectors, solar cells, and photocatalytic water splitting. This review unveils the vast device application potential of MA2Z4-based heterostructures, and paves a roadmap for the future experimental and theoretical development of MA2Z4-based functional heterostructures and devices. △ Less

Submitted 24 October, 2023; v1 submitted 5 April, 2023; originally announced April 2023.

Comments: 32 pages, 15 figures

Differentiable programming tensor networks for Kitaev magnets

Authors: Xing-Yu Zhang, Shuang Liang, Hai-Jun Liao, Wei Li, Lei Wang

Abstract: We present a general computational framework to investigate ground state properties of quantum spin models on infinite two-dimensional lattices using automatic differentiation-based gradient optimization of infinite projected entangled-pair states. The approach exploits the variational uniform matrix product states to contract infinite tensor networks with unit-cell structure and incorporates auto… ▽ More We present a general computational framework to investigate ground state properties of quantum spin models on infinite two-dimensional lattices using automatic differentiation-based gradient optimization of infinite projected entangled-pair states. The approach exploits the variational uniform matrix product states to contract infinite tensor networks with unit-cell structure and incorporates automatic differentiation to optimize the local tensors. We applied this framework to the Kitaev-type model, which involves complex interactions and competing ground states. To evaluate the accuracy of this method, we compared the results with exact solutions for the Kitaev model and found that it has a better agreement for various observables compared to previous tensor network calculations based on imaginary-time projection. Additionally, by finding out the ground state with lower variational energy compared to previous studies, we provided convincing evidence for the existence of nematic paramagnetic phases and 18-site configuration in the phase diagram of the $K$-$Γ$ model. Furthermore, in the case of the realistic $K$-$J$-$Γ$-$Γ'$ model for the Kitaev material $α$-RuCl$_3$, we discovered a non-colinear zigzag ground state. Lastly, we also find that the strength of the critical out-of-plane magnetic field that suppresses such a zigzag state has a lower transition field value than the previous finite-cylinder calculations. The framework is versatile and will be useful for a quick scan of phase diagrams for a broad class of quantum spin models. △ Less

Submitted 4 August, 2023; v1 submitted 4 April, 2023; originally announced April 2023.

Journal ref: Phys. Rev. B 108, 085103 (2023)

Universal thermodynamic bounds on symmetry breaking in biochemical systems

Authors: Shiling Liang, Paolo De Los Rios, Daniel Maria Busiello

Abstract: Living systems are maintained out-of-equilibrium by external driving forces. At stationarity, they exhibit emergent selection phenomena that break equilibrium symmetries and originate from the expansion of the accessible chemical space due to non-equilibrium conditions. Here, we use the matrix-tree theorem to derive universal thermodynamic bounds on these symmetry-breaking features in biochemical… ▽ More Living systems are maintained out-of-equilibrium by external driving forces. At stationarity, they exhibit emergent selection phenomena that break equilibrium symmetries and originate from the expansion of the accessible chemical space due to non-equilibrium conditions. Here, we use the matrix-tree theorem to derive universal thermodynamic bounds on these symmetry-breaking features in biochemical systems. Our bounds are independent of the kinetics and hold for both closed and open reaction networks. We also extend our results to master equations in the chemical space. Using our framework, we recover the thermodynamic constraints in kinetic proofreading. Finally, we show that the contrast of reaction-diffusion patterns can be bounded only by the non-equilibrium driving force. Our results provide a general framework for understanding the role of non-equilibrium conditions in sha** the steady-state properties of biochemical systems. △ Less

Submitted 21 May, 2023; v1 submitted 22 December, 2022; originally announced December 2022.

Journal ref: Phys. Rev. Lett. 132, 228402 (2024)

Approximate Message Passing for Multi-Layer Estimation in Rotationally Invariant Models

Authors: Yizhou Xu, TianQi Hou, ShanSuo Liang, Marco Mondelli

Abstract: We consider the problem of reconstructing the signal and the hidden variables from observations coming from a multi-layer network with rotationally invariant weight matrices. The multi-layer structure models inference from deep generative priors, and the rotational invariance imposed on the weights generalizes the i.i.d.\ Gaussian assumption by allowing for a complex correlation structure, which i… ▽ More We consider the problem of reconstructing the signal and the hidden variables from observations coming from a multi-layer network with rotationally invariant weight matrices. The multi-layer structure models inference from deep generative priors, and the rotational invariance imposed on the weights generalizes the i.i.d.\ Gaussian assumption by allowing for a complex correlation structure, which is typical in applications. In this work, we present a new class of approximate message passing (AMP) algorithms and give a state evolution recursion which precisely characterizes their performance in the large system limit. In contrast with the existing multi-layer VAMP (ML-VAMP) approach, our proposed AMP -- dubbed multi-layer rotationally invariant generalized AMP (ML-RI-GAMP) -- provides a natural generalization beyond Gaussian designs, in the sense that it recovers the existing Gaussian AMP as a special case. Furthermore, ML-RI-GAMP exhibits a significantly lower complexity than ML-VAMP, as the computationally intensive singular value decomposition is replaced by an estimation of the moments of the design matrices. Finally, our numerical results show that this complexity gain comes at little to no cost in the performance of the algorithm. △ Less

Submitted 3 December, 2022; originally announced December 2022.

Half-integer conductance plateau at the $ν= 2/3$ fractional quantum Hall state in a quantum point contact

Authors: James Nakamura, Shuang Liang, Geoffrey C. Gardner, Michael J. Manfra

Abstract: The $ν= 2/3$ fractional quantum Hall state is the hole-conjugate state to the primary Laughlin $ν= 1/3$ state. We investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure designed to have a sharp confining potential. When a small but finite bias is applied, we observe an intermediate conductance plateau with $G = 0.5 \frac{e^2}{h}$. This pl… ▽ More The $ν= 2/3$ fractional quantum Hall state is the hole-conjugate state to the primary Laughlin $ν= 1/3$ state. We investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure designed to have a sharp confining potential. When a small but finite bias is applied, we observe an intermediate conductance plateau with $G = 0.5 \frac{e^2}{h}$. This plateau is observed in multiple QPCs, and persists over a significant range of magnetic field, gate voltage, and source-drain bias, making it a robust feature. Using a simple model which considers scattering and equilibration between counterflowing charged edge modes, we find this half-integer quantized plateau to be consistent with full reflection of an inner counterpropagating -1/3 edge mode while the outer integer mode is fully transmitted. In a QPC fabricated on a different heterostructure which has a softer confining potential, we instead observe an intermediate conductance plateau at $G = \frac{1}{3} \frac{e^2}{h}$. These results provide support for a model at $ν= 2/3$ in which the edge transitions from a structure having an inner upstream -1/3 charge mode and outer downstream integer mode to a structure with two downstream 1/3 charge modes when the confining potential is tuned from sharp to soft and disorder prevails. △ Less

Submitted 20 December, 2022; v1 submitted 30 November, 2022; originally announced November 2022.

Comments: 6+4 pages, 4+4 figures

Cascadable in-memory computing based on symmetric writing and read out

Authors: Lizheng Wang, Junlin Xiong, Bin Cheng, Yudi Dai, Fuyi Wang, Chen Pan, Tianjun Cao, Xiaowei Liu, Pengfei Wang, Moyu Chen, Shengnan Yan, Zenglin Liu, **g**g Xiao, Xianghan Xu, Zhenlin Wang, Youguo Shi, Sang-Wook Cheong, Haijun Zhang, Shi-Jun Liang, Feng Miao

Abstract: The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anis… ▽ More The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2 and WTe2. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved by employing unconventional charge to z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin to charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing. △ Less

Submitted 12 November, 2022; originally announced November 2022.

Comments: Accepted by Science Advances

Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Authors: Zhiyi Zhang, Bin Cheng, Jeremy Lim, Anyuan Gao, Lingyuan Lyu, Tianju Cao, Shuang Wang, Zhu-An Li, Qingyun Wu, L. K. Ang, Yee Sin Ang, Shi-Jun Liang, Feng Miao

Abstract: Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8… ▽ More Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5E_g/e with E_g the band gap of semiconductor. We develop a two-dimensional impact ionization model and uncover that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon (e-ph) scattering in the layered InSe flake. Our findings open up a promising avenue for develo** novel weak-light detectors with low energy consumption and high sensitivity. △ Less

Submitted 11 November, 2022; originally announced November 2022.

Tunable quantum criticalities in an isospin extended Hubbard model simulator

Authors: Qiao Li, Bin Cheng, Moyu Chen, Bo Xie, Yongqin Xie, Pengfei Wang, Fanqiang Chen, Zenglin Liu, Kenji Watanabe, Takashi Taniguchi, Shi-Jun Liang, Da Wang, Chenjie Wang, Qiang-Hua Wang, Jianpeng Liu, Feng Miao

Abstract: Studying strong electron correlations has been an essential driving force for pushing the frontiers of condensed matter physics. In particular, in the vicinity of correlation-driven quantum phase transitions (QPTs), quantum critical fluctuations of multiple degrees of freedom facilitate exotic many-body states and quantum critical behaviors beyond Landau's framework. Recently, moiré heterostructur… ▽ More Studying strong electron correlations has been an essential driving force for pushing the frontiers of condensed matter physics. In particular, in the vicinity of correlation-driven quantum phase transitions (QPTs), quantum critical fluctuations of multiple degrees of freedom facilitate exotic many-body states and quantum critical behaviors beyond Landau's framework. Recently, moiré heterostructures of van der Waals materials have been demonstrated as a highly tunable quantum platform for exploring fascinating strongly correlated quantum physics. Here, we report the observation of tunable quantum criticalities in an experimental simulator of extended Hubbard model with spin-valley isospins arising in chiral-stacked twisted double bilayer graphene. Scaling analysis shows a quantum two-stage criticality manifesting two distinct quantum critical points as the generalized Wigner crystal transits to a Fermi liquid by varying the displacement field, suggesting the emergence of a critical intermediate phase. The quantum two-stage criticality evolves into a quantum pseudo criticality as a high parallel magnetic field is applied. In such pseudo criticality, we find that the quantum critical scaling is only valid above a critical temperature, indicating a weak first-order QPT therein. Our results demonstrate a highly tunable solid-state simulator with intricate interplay of multiple degrees of freedom for exploring exotic quantum critical states and behaviors. △ Less

Submitted 15 September, 2022; originally announced September 2022.

Comments: https://www.nature.com/articles/s41586-022-05106-0

Journal ref: Nature (2022)

Observation of Coexisting Dirac Bands and Moiré Flat Bands in Magic-Angle Twisted Trilayer Graphene

Authors: Yiwei Li, Shihao Zhang, Fanqiang Chen, Liyang Wei, Zonglin Zhang, Hanbo Xiao, Han Gao, Moyu Chen, Shijun Liang, Ding Pei, Lixuan Xu, Kenji Watanabe, Takashi Taniguchi, Lexian Yang, Feng Miao, Jianpeng Liu, Bin Cheng, Meixiao Wang, Yulin Chen, Zhongkai Liu

Abstract: Moiré superlattices that consist of two or more layers of two-dimensional materials stacked together with a small twist angle have emerged as a tunable platform to realize various correlated and topological phases, such as Mott insulators, unconventional uperconductivity and quantum anomalous Hall effect. Recently, the magic-angle twisted trilayer graphene (MATTG) has shown both robust superconduc… ▽ More Moiré superlattices that consist of two or more layers of two-dimensional materials stacked together with a small twist angle have emerged as a tunable platform to realize various correlated and topological phases, such as Mott insulators, unconventional uperconductivity and quantum anomalous Hall effect. Recently, the magic-angle twisted trilayer graphene (MATTG) has shown both robust superconductivity similar to magic-angle twisted bilayer graphene (MATBG) and other unique properties, including the Pauli-limit violating and re-entrant superconductivity. These rich properties are deeply rooted in its electronic structure under the influence of distinct moiré potential and mirror symmetry. Here, combining nanometer-scale spatially resolved angle-resolved photoemission spectroscopy (nano-ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we systematically measure the yet unexplored band structure of MATTG near charge neutrality. Our measurements reveal the coexistence of the distinct dispersive Dirac band with the emergent moiré flat band, showing nice agreement with the theoretical calculations. These results serve as a stepstone for further understanding of the unconventional superconductivity in MATTG. △ Less

Submitted 8 September, 2022; v1 submitted 5 September, 2022; originally announced September 2022.

Comments: accepted by Advanced Materials

Chaotic spin precession in antiferromagnetic domain walls

Authors: Yangyi Chen, Xu Ge, Wei Luo, Shiheng Liang, Xiaofei Yang, Long You, Yue Zhang

Abstract: In contrast with rich investigations about the translation of an antiferromagnetic (AFM) texture, spin precession in an AFM texture is seldom concerned for lacking an effective driving method. In this work, however, we show that under an alternating spin-polarized current with spin along the AFM anisotropy axis, spin precession can be excited in an AFM DW. Especially, chaotic spin precession occur… ▽ More In contrast with rich investigations about the translation of an antiferromagnetic (AFM) texture, spin precession in an AFM texture is seldom concerned for lacking an effective driving method. In this work, however, we show that under an alternating spin-polarized current with spin along the AFM anisotropy axis, spin precession can be excited in an AFM DW. Especially, chaotic spin precession occurs at moderate interfacial Dzyaloshinskii-Moriya interaction (DMI), which contributes to a nonlinear term in the dynamic equation of DW precession. Also, crisis-induced intermittent chaos appears when the current density is higher than a critical value. This work not only paves a way to unravel rich spin precession behaviors in an AFM texture but also provides guidelines for develo** ultrafast spintronic devices based on new physical principles. △ Less

Submitted 6 July, 2022; originally announced July 2022.

Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications

Authors: Che Chen Tho, Chenjiang Yu, Qin Tang, Qianqian Wang, Tong Su, Zhuoer Feng, Qingyun Wu, C. V. Nguyen, Wee-Liat Ong, Shi-Jun Liang, San-Dong Guo, Liemao Cao, Shengli Zhang, Shengyuan A. Yang, Lay Kee Ang, Guangzhao Wang, Yee Sin Ang

Abstract: Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain… ▽ More Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers provides a compelling material platform for develo** high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi$_2$N$_4$ and WSi$_2$N$_4$-based [(Mo,W)Si$_2$N$_4$] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi$_2$N$_4$/(InSe, WSe$_2$) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si$_2$N$_4$ vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si$_2$N$_4$/$α_2$-(Mo,W)Ge$_2$P$_4$ vdWHs. Our findings unravel the enormous potential of (Mo,W)Si$_2$N$_4$ vdWHs in designing ultimately compact excitonic solar cell device technology. △ Less

Submitted 4 July, 2022; v1 submitted 23 June, 2022; originally announced June 2022.

Comments: 30 pages, 7 figures

Organic metallic epsilon-near-zero materials with large ultrafast optical nonlinearity

Authors: Qili Hu, Xinlan Yu, Hongqi Liu, Jiahuan Qiu, Wei Tang, Sen Liang, Linjun Li, Miao Du, Junjun Jia, Hui Ye

Abstract: Epsilon-near-zero (ENZ) materials have shown significant potential for nonlinear optical applications due to their ultrafast hot carriers and consequent optical nonlinearity enhancement. Modified poly(3,4-ethylenedioxythiophene) (PEDOT) films show metallic characteristics and a resultant ENZ wavelength near 1550nm through polar solvent treatment and annealing. The metallic PEDOT film exhibits an i… ▽ More Epsilon-near-zero (ENZ) materials have shown significant potential for nonlinear optical applications due to their ultrafast hot carriers and consequent optical nonlinearity enhancement. Modified poly(3,4-ethylenedioxythiophene) (PEDOT) films show metallic characteristics and a resultant ENZ wavelength near 1550nm through polar solvent treatment and annealing. The metallic PEDOT film exhibits an intrinsic optical nonlinear response that is comparable to gold and 100-fold higher than typical inorganic semiconductor ENZ materials due to π-conjugated delocalized electrons. Hot carriers generate a 22-fold increase in the optical nonlinearity coefficient of metallic PEDOT films at 1550 nm. Hot holes in metallic PEDOT films have a smaller enhancement multiple of carrier temperature and a longer relaxation time than hot electrons in inorganic ENZ materials due to the larger imaginary permittivity and hot-phonon bottleneck for carrier cooling. Our findings suggest that π-conjugated ENZ polymer may have unique ultrafast and nonlinear optical properties compared to inorganic ENZ materials, enabling new possibilities in on-chip nanophotonic devices, nonlinear optics, and plasmonics. △ Less

Submitted 5 October, 2022; v1 submitted 12 April, 2022; originally announced April 2022.

Comments: There is a mistake in our simulation part of two-temperature model. Thus we revise the parameter and reconstruct our idea. The new content is very different to this old one. Thus, we want to withdraw this paper and submit another new one

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Authors: Liemao Cao, Xiaohui Deng, Guanghui Zhou, Shi-Jun Liang, Chuong V. Nguyen, L. K. Ang, Yee Sin Ang

Abstract: Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulat… ▽ More Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices. △ Less

Submitted 29 March, 2022; originally announced March 2022.

Comments: 9 pages, 5 figures, accepted for publication in Physical Review B (2022)

Observation of Non-Abelian Thouless Pump

Authors: Oubo You, Shanjun Liang, Biye Xie, Wenlong Gao, Weimin Ye, Jie Zhu, Shuang Zhang

Abstract: Thouless pump is a one-dimensional dynamic topological effect that stems from the same topological mechanism as the renowned two-dimensional Chern insulators, with one momentum dimension replaced by a time variant evolution parameter. The underlying physics is abelian, concerning topologies of individual bands. By introducing multi-band non-abelian topology into pum**, much richer physics is exp… ▽ More Thouless pump is a one-dimensional dynamic topological effect that stems from the same topological mechanism as the renowned two-dimensional Chern insulators, with one momentum dimension replaced by a time variant evolution parameter. The underlying physics is abelian, concerning topologies of individual bands. By introducing multi-band non-abelian topology into pum**, much richer physics is expected that goes beyond the abelian counterpart. Here we report the observation of a non-abelian Thouless pump in an acoustic waveguide array with judiciously engineered coupling configurations. The observed non-abelian effect originates from time-evolution of eigen-states in Z_3 pump cycles that traverse across several band degeneracies in the parameter space in a three-band system. Interestingly, the pump of the eigenstates exhibits non-commutativity, i.e. the final state depends critically on the order of the pum** paths. Our study paves ways for exploring and utilizing non-abelian dynamical effects in classical systems. △ Less

Submitted 17 October, 2021; originally announced October 2021.

Comments: 9 pages, 5 figures

Scalable massively parallel computing using continuous-time data representation in nanoscale crossbar array

Authors: Cong Wang, Shi-Jun Liang, Chen-Yu Wang, Zai-Zheng Yang, Yingmeng Ge, Chen Pan, Xi Shen, Wei Wei, Yichen Zhao, Zaichen Zhang, Bin Cheng, Chuan Zhang, Feng Miao

Abstract: The growth of connected intelligent devices in the Internet of Things has created a pressing need for real-time processing and understanding of large volumes of analogue data. The difficulty in boosting the computing speed renders digital computing unable to meet the demand for processing analogue information that is intrinsically continuous in magnitude and time. By utilizing a continuous data re… ▽ More The growth of connected intelligent devices in the Internet of Things has created a pressing need for real-time processing and understanding of large volumes of analogue data. The difficulty in boosting the computing speed renders digital computing unable to meet the demand for processing analogue information that is intrinsically continuous in magnitude and time. By utilizing a continuous data representation in a nanoscale crossbar array, parallel computing can be implemented for the direct processing of analogue information in real time. Here, we propose a scalable massively parallel computing scheme by exploiting a continuous-time data representation and frequency multiplexing in a nanoscale crossbar array. This computing scheme enables the parallel reading of stored data and the one-shot operation of matrix-matrix multiplications in the crossbar array. Furthermore, we achieve the one-shot recognition of 16 letter images based on two physically interconnected crossbar arrays and demonstrate that the processing and modulation of analogue information can be simultaneously performed in a memristive crossbar array. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Comments: 18 pages, 4 figures

Journal ref: Nature Nanotechnology (2021)

Dissipation-driven selection under finite diffusion: hints from equilibrium and separation of time-scales

Authors: Shiling Liang, Paolo De Los Rios, Daniel Maria Busiello

Abstract: When exposed to a thermal gradient, reaction networks can convert thermal energy into the chemical selection of states that would be unfavourable at equilibrium. The kinetics of reaction paths, and thus how fast they dissipate available energy, might be dominant in dictating the stationary populations of all chemical states out-of-equilibrium. This phenomenology has been theoretically explored mai… ▽ More When exposed to a thermal gradient, reaction networks can convert thermal energy into the chemical selection of states that would be unfavourable at equilibrium. The kinetics of reaction paths, and thus how fast they dissipate available energy, might be dominant in dictating the stationary populations of all chemical states out-of-equilibrium. This phenomenology has been theoretically explored mainly in the infinite diffusion limit. Here, we show that the regime in which the diffusion rate is finite, and also slower than some chemical reactions, might give birth to interesting features, as the maximization of selection, or the switch of the selected state at stationarity. We introduce a framework, rooted in a time-scale separation analysis, which is able to capture leading non-equilibrium features using only equilibrium arguments under well-defined conditions. In particular, it is possible to identify fast-dissipation subnetworks of reactions whose Boltzmann equilibrium dominates the steady-state of the entire system as a whole. Finally, we also show that the dissipated heat (and so the entropy production) can be estimated, under some approximations, through the heat capacity of fast-dissipation subnetworks. This work provides a tool to develop an intuitive equilibrium-based grasp on complex non-isothermal reaction networks, which are important paradigms to understand the emergence of complex structures from basic building blocks. △ Less

Submitted 11 August, 2021; originally announced August 2021.

Impact of bulk-edge coupling on observation of anyonic braiding statistics in quantum Hall interferometers

Authors: James Nakamura, Shuang Liang, Geoffrey C. Gardner, Michael J. Manfra

Abstract: Quantum Hall interferometers have been used to probe fractional charge, and more recently, fractional statistics of quasiparticles. Theoretical predictions have been made regarding the effect of electrostatic coupling on interferometer behavior and observation of anyonic phases. Here we present measurements of a small Fabry-Perot interferometer in which these electrostatic coupling constants can b… ▽ More Quantum Hall interferometers have been used to probe fractional charge, and more recently, fractional statistics of quasiparticles. Theoretical predictions have been made regarding the effect of electrostatic coupling on interferometer behavior and observation of anyonic phases. Here we present measurements of a small Fabry-Perot interferometer in which these electrostatic coupling constants can be determined experimentally, facilitating quantitative comparison with theory. At the $ν= 1/3$ fractional quantum Hall state, this device exhibits Aharonov-Bohm interference near the center of the conductance plateau interrupted by a few discrete phase jumps, and $Φ_0$ oscillations at higher and lower magnetic fields, consistent with theoretical predictions for detection of anyonic statistics. We estimate the electrostatic parameters $K_I$ and $K_{IL}$ by two methods: by the ratio of oscillation periods in compressible versus incompressible regions, and from finite-bias conductance measurements, and these two methods yield consistent results. We find that the extracted $K_I$ and $K_{IL}$ can account for the deviation of the values of the discrete phase jumps from the theoretically predicted anyonic phase $θ_a = 2π/3$. In the integer quantum Hall regime, we find that the experimental values of $K_I$ and $K_{IL}$ can account for the the observed Aharonov-Bohm and Coulomb dominated behavior of different edge states. △ Less

Submitted 5 July, 2021; originally announced July 2021.

Comments: 11 pages, 6 figures

Mass-energy equivalence for terahertz magnon excitation in antiferromagnetic domain walls

Authors: Xu Ge, Fa Chen, Zaidong Li, Peng Yan, Hong-Guang Piao, Wei Luo, Shiheng Liang, Xiaofei Yang, Long You, Yue Zhang

Abstract: The theory of special relativity is one of the most significant achievements in modern physics, with several important predictions such as time dilation, size contraction for a moving object and mass-energy equivalence. Recent studies have demonstrated size contraction for an antiferromagnetic (AFM) domain wall (DW). Here, we show the mass-energy equivalence by numerically investigating the excita… ▽ More The theory of special relativity is one of the most significant achievements in modern physics, with several important predictions such as time dilation, size contraction for a moving object and mass-energy equivalence. Recent studies have demonstrated size contraction for an antiferromagnetic (AFM) domain wall (DW). Here, we show the mass-energy equivalence by numerically investigating the excitation of terahertz (THz) magnons from a moving AFM DW under the magnetic anisotropy energy gradient. The energy of magnons comes from the loss of DW mass, accompanied with a DW width broadening, overcoming the Lorentz contraction effect. Our results pave the way to study relativistic physics in AFM textures and to efficiently generate THz magnons by electric means. △ Less

Submitted 10 November, 2021; v1 submitted 3 June, 2021; originally announced June 2021.

Comments: 8 pages, 4 figures

2022 Roadmap on Neuromorphic Computing and Engineering

Authors: Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Marković, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri , et al. (34 additional authors not shown)

Abstract: Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exas… ▽ More Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83 △ Less

Submitted 13 January, 2022; v1 submitted 12 May, 2021; originally announced May 2021.

Journal ref: Neuromorph. Comput. Eng. 2 022501 (2022)

Temperature-sensitive spatial distribution of defects in PdSe2 flakes

Authors: Xiaowei Liu, Yaojia Wang, Qiqi Guo, Shijun Liang, Tao Xu, Bo Liu, Jiabin Qiao, Shengqiang Lai, Junwen Zeng, Song Hao, Chenyi Gu, Tianjun Cao, Chenyu Wang, Yu Wang, Chen Pan, Guangxu Su, Yuefeng Nie, Xiangang Wan, Litao Sun, Zhenlin Wang, Lin He, Bin Cheng, Feng Miao

Abstract: Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microsco… ▽ More Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microscopy (STM). We observe that the spatial distribution of Se vacancies in PdSe2 flakes exhibits a strong anisotropic characteristic at 80 K, and that this orientation-dependent feature is weakened when temperature is raised. Moreover, we carry out transport measurements on PdSe2 thin flakes and show that the anisotropic features of carrier mobility and phase coherent length are also sensitive to temperature. Combining with theoretical analysis, we conclude that temperature-driven defect spatial redistribution could interpret the temperature-sensitive electrical transport behaviors in PdSe2 thin flakes. Our work highlights that engineering spatial distribution of defects in the van der Waals materials, which has been overlooked before, may open up a new avenue to tailor the physical properties of materials and explore new device functionalities. △ Less

Submitted 14 April, 2021; originally announced April 2021.

Comments: 24 pages, 12 figures, accepted by Physical Review Materials

Realizing Majorana fermion modes in the Kitaev model

Authors: Lu Yang, Jia-Xing Zhang, Shuang Liang, Wei Chen, Qiang-Hua Wang

Abstract: We study the possibility to realize Majorana zero mode that's robust and may be easily manipulated for braiding in quantum computing in the ground state of the Kitaev model in this work. To achieve this we first apply a uniform [111] magnetic field to the gapless Kitaev model and turn the Kitaev model to an effective p + ip topological superconductor of spinons. We then study possible vortex bindi… ▽ More We study the possibility to realize Majorana zero mode that's robust and may be easily manipulated for braiding in quantum computing in the ground state of the Kitaev model in this work. To achieve this we first apply a uniform [111] magnetic field to the gapless Kitaev model and turn the Kitaev model to an effective p + ip topological superconductor of spinons. We then study possible vortex binding in such system to a topologically trivial spot in the ground state. We consider two cases in the system: one is a vacancy and the other is a fully polarized spin. We show that in both cases, the system binds a vortex with the defect and a robust Majorana zero mode in the ground state at a weak uniform [111] magnetic field. The distribution and asymptotic behavior of these Majorana zero modes is studied. The Majorana zero modes in both cases decay exponentially in space, and are robust against local perturbations and other Majorana zero modes far away, which makes them promising candidate for braiding in topological quantum computing. △ Less

Submitted 10 December, 2021; v1 submitted 4 March, 2021; originally announced March 2021.

Comments: 15pages

Journal ref: Chin. Phys. B Vol. 30, No. 11 (2021) 117504

The intrinsic non-equilibrium nature of thermophoresis

Authors: Shiling Liang, Daniel Maria Busiello, Paolo De Los Rios

Abstract: Exposing a solution to a temperature gradient can lead to the accumulation of particles on either the cold or warm side. This phenomenon, known as thermophoresis, has been discovered more than a century ago, and yet its microscopic origin is still debated. Here, we show that thermophoresis can be observed in any system such that the transitions between different internal states are modulated by te… ▽ More Exposing a solution to a temperature gradient can lead to the accumulation of particles on either the cold or warm side. This phenomenon, known as thermophoresis, has been discovered more than a century ago, and yet its microscopic origin is still debated. Here, we show that thermophoresis can be observed in any system such that the transitions between different internal states are modulated by temperature and such that different internal states have different transport properties. We establish thermophoresis as a genuine non-equilibrium effect, whereby a system of currents in real and internal space that is consistent with the thermodynamic necessity of transporting heat from warm to cold regions. Our approach also provides an expression for the Soret coefficient, which decides whether particles accumulate on the cold or on the warm side, that is associated with the correlation between the energies of the internal states and their transport properties, that instead remain system-specific quantities. Finally, we connect our results to previous approaches based on close-to-equilibrium energetics. Our thermodynamically consistent approach thus encompasses and generalizes previous findings. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Journal ref: New J. Phys. 24 (2022) 123006

Quantum Hall admittance in non-Hermitian systems

Authors: Annan Fan, Guang-Yao Huang, Shi-Dong Liang

Abstract: We propose a pair of the complex Berry curvatures associated with the non-Hermitian Hamiltonian and its Hermitian adjoint to reveal new physics in non-Hermitian systems. We give the complex Berry curvature and Berry phase for the two-dimensional non-Hermitian Dirac model. The imaginary part of the complex Berry phase induces the quantum Hall susceptance such that the quantum Hall conductance is ge… ▽ More We propose a pair of the complex Berry curvatures associated with the non-Hermitian Hamiltonian and its Hermitian adjoint to reveal new physics in non-Hermitian systems. We give the complex Berry curvature and Berry phase for the two-dimensional non-Hermitian Dirac model. The imaginary part of the complex Berry phase induces the quantum Hall susceptance such that the quantum Hall conductance is generalized to quantum Hall admittance for non-Hermitian systems, which implies that the non-Hermiticity of systems could induce an intrinsic quantum capacitance or inductance of systems depending on the non-Hermitian parameters. We analyze the complex energy band structures of the two-dimensional non-Hermitian Dirac model and demonstrate the point and line gaps and their closings as the exceptional degeneracy of the energy bands in the parameter space, which are associated with topological phases. In the continuum limit, we obtain the complex Berry phase in the parameter space. △ Less

Submitted 1 January, 2021; originally announced January 2021.

Comments: 22 pages and 4 figures

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Authors: Qianqian Wang, Liemao Cao, Shi-Jun Liang, Weikang Wu, Guangzhao Wang, Ching Hua Lee, Wee Liat Ong, Hui Ying Yang, Lay Kee Ang, Shengyuan A. Yang, Yee Sin Ang

Abstract: Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N… ▽ More Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionally large SBH slope parameter of S=0.7 is obtained, which outperform the vast majority of other 2D semiconductors. Such surprising behavior arises from the unique morphology of MoSi$_2$N$_4$ and WSi$_2$N$_4$. The outlying Si-N layer forms a native atomic layer that protects the semiconducting inner-core from the perturbance of metal contacts, thus suppressing the FLP. Our findings reveal the potential of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as a novel 2D material platform for designing high-performance and energy-efficient 2D nanodevices. △ Less

Submitted 23 December, 2020; v1 submitted 14 December, 2020; originally announced December 2020.

Comments: 28 pages, 5 figures

Equilibrium and non-equilibrium furanose selection in the ribose isomerisation network

Authors: Avinash Vicholous Dass, Thomas Georgelin, Frances Westall, Frédéric Foucher, Paolo De Los Rios, Daniel Maria Busiello, Shiling Liang, Francesco Piazza

Abstract: The exclusive presence of $β$-D-ribofuranose in nucleic acids is still a conundrum in prebiotic chemistry, given that pyranose species are substantially more stable at equilibrium. However, a precise characterisation of the relative furanose/pyranose fraction at temperatures higher than about 50$^{\,\rm o}$C is still lacking. Here, we employ a combination of NMR measurements and statistical mechan… ▽ More The exclusive presence of $β$-D-ribofuranose in nucleic acids is still a conundrum in prebiotic chemistry, given that pyranose species are substantially more stable at equilibrium. However, a precise characterisation of the relative furanose/pyranose fraction at temperatures higher than about 50$^{\,\rm o}$C is still lacking. Here, we employ a combination of NMR measurements and statistical mechanics modelling to predict a population inversion between furanose and pyranose at equilibrium at high temperatures. More importantly, we show that a steady temperature gradient may steer an open isomerisation network into a non-equilibrium steady state where furanose is boosted beyond the limits set by equilibrium thermodynamics. Moreover, we demonstrate that nonequilibrium selection of furanose is maximum at optimal dissipation, as gauged by the temperature gradient and energy barriers for isomerisation. The predicted optimum is compatible with temperature drops found in hydrothermal vents associated with extremely fresh lava flows on the seafloor. △ Less

Submitted 30 January, 2021; v1 submitted 25 October, 2020; originally announced October 2020.

Comments: Main manuscript + supplementary information

Review of experiments on the chiral anomaly in Dirac-Weyl semimetals

Authors: N. P. Ong, Sihang Liang

Abstract: We provide a review of recent experimental results on the chiral anomaly in Dirac/Weyl semimetals. After a brief introduction, we trace the steps leading to the prediction of materials that feature protected 3D bulk Dirac nodes. The chiral anomaly is presented in terms of charge pum** between the chiral Landau levels of Weyl fermions in parallel electric and magnetic fields. The related chiral m… ▽ More We provide a review of recent experimental results on the chiral anomaly in Dirac/Weyl semimetals. After a brief introduction, we trace the steps leading to the prediction of materials that feature protected 3D bulk Dirac nodes. The chiral anomaly is presented in terms of charge pum** between the chiral Landau levels of Weyl fermions in parallel electric and magnetic fields. The related chiral magnetic effect and chiral zero sound are described. Current jetting effects, which present major complications in experiments on the longitudinal magnetoresistance, are carefully analyzed. We describe a recent test that is capable of distinguishing these semiclassical artifacts from intrinsic quantum effects. Turning to experiments, we review critically the longitudinal magnetoresistance experiments in the Dirac/Weyl semimetals Na3Bi, GdPtBi, ZrTe5 and TaAs. Alternate approaches to the chiral anomaly, including experiments on non-local transport, thermopower, thermal conductivity and optical pump-probe response are reviewed. In the Supplement, we provide a brief discussion of the chiral anomaly in the broader context of high energy physics and relativistic quantum field theory, as well the anomaly's starring role at the nexus of quantum physics and differential geometry. △ Less

Submitted 16 October, 2020; originally announced October 2020.

Comments: 20 pages, 9 figures

Journal ref: Nature Review Physics 3, 394 (2021)

Stückelberg interferometry using spin-orbit-coupled cold atoms in an optical lattice

Authors: Shuang Liang, Zheng-Chun Li, Wei** Zhang, Lu Zhou, Zhihao Lan

Abstract: Time evolution of spin-orbit-coupled cold atoms in an optical lattice is studied, with a two-band energy spectrum having two avoided crossings. A force is applied such that the atoms experience two consecutive Landau-Zener tunnelings while transversing the avoided crossings. Stückelberg interference arises from the phase accumulated during the adiabatic evolution between the two tunnelings. This p… ▽ More Time evolution of spin-orbit-coupled cold atoms in an optical lattice is studied, with a two-band energy spectrum having two avoided crossings. A force is applied such that the atoms experience two consecutive Landau-Zener tunnelings while transversing the avoided crossings. Stückelberg interference arises from the phase accumulated during the adiabatic evolution between the two tunnelings. This phase is gauge field-dependent and thus provides new opportunities to measure the synthetic gauge field, which is verified via calculation of spin transition probabilities after a double passage process. Time-dependent and time-averaged spin probabilities are derived, in which resonances are found. We also demonstrate chiral Bloch oscillation and rich spin-momentum locking behavior in this system. △ Less

Submitted 23 September, 2020; originally announced September 2020.

Comments: 9 pages, 6 figures, close to published version

Journal ref: Phys. Rev. A 102, 033332 (2020)

Measuring the linear and nonlinear elastic properties of brain tissue with shear waves and inverse analysis

Authors: Yi Jiang, Guoyang Li, Lin-Xue Qian, Si Liang, Michel Destrade, Yan** Cao

Abstract: We use supersonic shear wave imaging (SSI) technique to measure not only the linear but also the nonlinear elastic properties of brain matter. Here, we tested six porcine brains ex vivo and measured the velocities of the plane shear waves induced by acoustic radiation force at different states of pre-deformation when the ultrasonic probe is pushed into the soft tissue. We relied on an inverse meth… ▽ More We use supersonic shear wave imaging (SSI) technique to measure not only the linear but also the nonlinear elastic properties of brain matter. Here, we tested six porcine brains ex vivo and measured the velocities of the plane shear waves induced by acoustic radiation force at different states of pre-deformation when the ultrasonic probe is pushed into the soft tissue. We relied on an inverse method based on the theory governing the propagation of small-amplitude acoustic waves in deformed solids to interpret the experimental data. We found that, depending on the subjects, the resulting initial shear modulus mu0 varies from 1.8 to 3.2 kPa, the stiffening parameter b of the hyperelastic Demiray-Fung model from 0.13 to 0.73, and the third- (A) and fourth-order (D) constants of weakly nonlinear elasticity from -1.3 to -20.6 kPa and from 3.1 to 8.7 kPa, respectively. Paired t-test performed on the experimental results of the left and right lobes of the brain shows no significant difference. These values are in line with those reported in the literature on brain tissue, indicating that the SSI method, combined to the inverse analysis, is an efficient and powerful tool for the mechanical characterization of brain tissue, which is of great importance for computer simulation of traumatic brain injury and virtual neurosurgery. △ Less

Submitted 31 August, 2020; originally announced September 2020.

Journal ref: Biomechanics and Modeling in Mechanobiology, volume 14, pages 1119=1128(2015)

Spin-orbit torque magnetization switching in MoTe2/permalloy heterostructures

Authors: Shiheng Liang, Shuyuan Shi, Chuang-Han Hsu, Kaiming Cai, Yi Wang, Pan He, Yang Wu, Vitor M. Pereira, Hyunsoo Yang

Abstract: The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based switching requires harnessing both new materials and novel physics to obtain high charge-to-spin conversion efficiencies, thus making the choice of spin source crucial.… ▽ More The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based switching requires harnessing both new materials and novel physics to obtain high charge-to-spin conversion efficiencies, thus making the choice of spin source crucial. Here we report the observation of spin-orbit torque switching in bilayers consisting of a semimetallic film of 1T'-MoTe2 adjacent to permalloy. Deterministic switching is achieved without external magnetic fields at room temperature, and the switching occurs with currents one order of magnitude smaller than those typical in devices using the best-performing heavy metals. The thickness dependence can be understood if the interfacial spin-orbit contribution is considered in addition to the bulk spin Hall effect. Further threefold reduction in the switching current is demonstrated with resort to dumbbell-shaped magnetic elements. These findings foretell exciting prospects of using MoTe2 for low-power semimetal material based spin devices. △ Less

Submitted 30 June, 2020; originally announced June 2020.

Phonon dispersions and electronic structures of two-dimensional IV-V compounds

Authors: Wanxing Lin, Shi-Dong Liang, Jiesen Li, Dao-Xin Yao

Abstract: One novel family of two-dimensional IV-V compounds have been proposed, whose dynamical stabilities and electronic properties have been systematically investigated using the density functional theory. Extending from our previous work, two phases of carbon phosphorus bilayers α- and β-C$_{2}$P$_{2}$ have been proposed. Both of them are dynamically stable and thermally stable at 300K. They possess in… ▽ More One novel family of two-dimensional IV-V compounds have been proposed, whose dynamical stabilities and electronic properties have been systematically investigated using the density functional theory. Extending from our previous work, two phases of carbon phosphorus bilayers α- and β-C$_{2}$P$_{2}$ have been proposed. Both of them are dynamically stable and thermally stable at 300K. They possess intrinsic HSE gaps of 2.70 eV and 2.67 eV, respectively. Similar α- and β-C$_{2}$Y$_{2}$ (Y= As, Sb, and Bi) can be obtained if the phosphorus atoms in the α- and β-C$_{2}$P$_{2}$ replaced by other pnictogens, respectively. If the C atoms in the α- and β-C$_{2}$Y$_{2}$ (Y= P, As, Sb, and Bi) are further replaced by other IV elements X (X=Si, Ge, Sn, and Pb), respectively, more derivatives of α- and β-X$_{2}$Y$_{2}$ (Y=N, P, As, Sb, and Bi) also can be obtained. It was found that the majority of them are dynamically stable. The proposed compounds range from metal to insulators depending on their constitutions. All insulated compounds can undergo a transition from insulator to metal induced by biaxial strain. Some of them can undergo a transition from indirect band gap to direct band gap. These new compounds can become candidates as photovoltaic device, thermoelectric material field as well as lamellated superconductors. △ Less

Submitted 19 October, 2020; v1 submitted 29 June, 2020; originally announced June 2020.

Comments: 58 pages, 65 figures

Journal ref: Carbon 172 (2021) 345-352

Direct observation of anyonic braiding statistics at the $ν$=1/3 fractional quantum Hall state

Authors: James Nakamura, Shuang Liang, Geoffrey C. Gardner, Michael J. Manfra

Abstract: Utilizing an electronic Fabry-Perot interferometer in which Coulomb charging effects are suppressed, we report experimental observation of anyonic braiding statistics for the $ν=1/3$ fractional quantum Hall state. Strong Aharonov-Bohm interference of the $ν=1/3$ edge mode is punctuated by discrete phase slips consistent with an anyonic phase of $θ_{anyon}=\frac{2π}{3}$. Our results are consistent… ▽ More Utilizing an electronic Fabry-Perot interferometer in which Coulomb charging effects are suppressed, we report experimental observation of anyonic braiding statistics for the $ν=1/3$ fractional quantum Hall state. Strong Aharonov-Bohm interference of the $ν=1/3$ edge mode is punctuated by discrete phase slips consistent with an anyonic phase of $θ_{anyon}=\frac{2π}{3}$. Our results are consistent with a recent theory of a Fabry-Perot interferometer operated in a regime in which device charging energy is small compared to the energy of formation of charged quasiparticles. Close correspondence between device operation and theoretical predictions substantiates our claim of observation of anyonic braiding. △ Less

Submitted 24 June, 2020; originally announced June 2020.

Comments: 9 pages, 4 figures

Observation of Negative THz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe2

Authors: Peng Suo, Huiyun Zhang, Shengnan Yan, Wenjie Zhang, Jibo Fu, Xian Lin, Song Hao, Zuanming **, Yu** Zhang, Chao Zhang, Feng Miao, Shi-Jun Liang, Guohong Ma

Abstract: As a newly emergent type-II Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique structure and novel physical properties, such as high carrier mobility, strong electron-phonon coupling and tunable bandgap, which make the PtTe2 a good candidate for applications in optoelectronics, valleytronics and far infrared detectors. Althoug… ▽ More As a newly emergent type-II Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique structure and novel physical properties, such as high carrier mobility, strong electron-phonon coupling and tunable bandgap, which make the PtTe2 a good candidate for applications in optoelectronics, valleytronics and far infrared detectors. Although the transport properties of PtTe2 have been studied extensively, the dynamics of the nonequilibrium carriers remain nearly uninvestigated. Herein we employ optical pump-terahertz (THz) probe spectroscopy (OPTP) to systematically study the photocarrier dynamics of PtTe2 thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the THz photoconductivity (PC) of 5 nm PtTe2 film shows abrupt increase initially, while the THz PC changes into negative value in a subpicosecond time scale, followed by a prolonged recovery process that lasted hundreds of picoseconds (ps). This unusual THz PC response observed in the 5 nm PtTe2 film was found to be absent in a 2 nm PtTe2 film. We assign the unexpected negative THz PC as the small polaron formation due to the strong electron-Eg-mode phonon coupling, which is further substantiated by pump fluence- and temperature-dependent measurements as well as the Raman spectroscopy. Moreover, our investigations give a subpicosecond time scale of sequential carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is fundamental importance for designing PtTe2-based optoelectronic devices. △ Less

Submitted 1 February, 2021; v1 submitted 23 June, 2020; originally announced June 2020.

Comments: 18 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 227402 (2021)

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

Authors: P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffrès, J. M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X. F. Han, Z. Wang, Y. Lu

Abstract: An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for t… ▽ More An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: Applied Physics Letters, 105, 012404 (2014)

Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions

Authors: Can Xiao, Huawei Sun, Luming Cheng, Xavier Devaux, Anthony Ferri, Weichuan Huang, Rachel Desfeux, Xiao-Guang Li, Sylvie Migot, Mairbek Chshiev, Sajid Rauf, Yajun Qi, Ruilong Wang, Tian** Zhang, Chang** Yang, Shiheng Liang, Yuan Lu

Abstract: Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the F… ▽ More Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized. However, there is still a lack of understanding of the transport properties in OMFTJs, especially the interplay between the ferroelectric domain structure in the organic barrier and the spin-polarized electron tunneling through the barrier. Here, we report on a systematic study of the temperature dependent transport behavior in La0.6Sr0.4MnO3/PVDF/Co OMFTJs. It is found that the thermal fluctuation of the ferroelectric domains plays an important role on the transport properties. When T>120K, the opposite temperature dependence of resistance for in up and down ferroelectric polarization states results in a rapid diminishing of tunneling electroresistance (TER). These results contribute to the understanding of the transport properties for designing high performance OMFTJs for memristor and spintronics applications. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: J. Phys. D: Appl. Phys. 2020

Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions

Authors: Xue Gao, Shiheng Liang, Anthony Ferri, Weichuan Huang, Didier Rouxel, Xavier Devaux, Xiao-Guang Li, Hongxin Yang, Mairbek Chshiev, Rachel Desfeux, Antonio Da Costa, Guichao Hu, Mathieu Stoffel, Abir Nachawaty, Chun** Jiang, Zhongming Zeng, Jian-** Liu, Hui Yang, Yuan Lu

Abstract: We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 45… ▽ More We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 450% at 10K and 100% at room temperature (RT), which is much higher than that of the pure PVDF based device (70% at 10K and 7% at RT). OMFTJs based on the PVDF:Fe3O4 nanocomposite could open new functionalities in smart multiferroic devices via the interplay of the magnetism of nanoparticle with the ferroelectricity of the organic barrier. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: Applied Physics Letters vol.116 (2020)