Showing 1–7 of 7 results for author: Lian, Y

Efficient and ultra-stable perovskite light-emitting diodes

Authors: Bingbing Guo, Runchen Lai, Sijie Jiang, Yaxiao Lian, Zhixiang Ren, Puyang Li, Xuhui Cao, Shiyu Xing, Yaxin Wang, Weiwei Li, Chen Zou, Mengyu Chen, Cheng Li, Baodan Zhao, Dawei Di

Abstract: Perovskite light-emitting diodes (PeLEDs) have emerged as a strong contender for next-generation display and information technologies. However, similar to perovskite solar cells, the poor operational stability remains the main obstacle toward commercial applications. Here we demonstrate ultra-stable and efficient PeLEDs with extraordinary operational lifetimes (T50) of 1.0x10^4 h, 2.8x10^4 h, 5.4x… ▽ More Perovskite light-emitting diodes (PeLEDs) have emerged as a strong contender for next-generation display and information technologies. However, similar to perovskite solar cells, the poor operational stability remains the main obstacle toward commercial applications. Here we demonstrate ultra-stable and efficient PeLEDs with extraordinary operational lifetimes (T50) of 1.0x10^4 h, 2.8x10^4 h, 5.4x10^5 h, and 1.9x10^6 h at initial radiance (or current densities) of 3.7 W/sr/m2 (~5 mA/cm2), 2.1 W/sr/m2 (~3.2 mA/cm2), 0.42 W/sr/m2 (~1.1 mA/cm2), and 0.21 W/sr/m2 (~0.7 mA/cm2) respectively, and external quantum efficiencies of up to 22.8%. Key to this breakthrough is the introduction of a dipolar molecular stabilizer, which serves two critical roles simultaneously. First, it prevents the detrimental transformation and decomposition of the alpha-phase FAPbI3 perovskite, by inhibiting the formation of lead and iodide intermediates. Secondly, hysteresis-free device operation and microscopic luminescence imaging experiments reveal substantially suppressed ion migration in the emissive perovskite. The record-long PeLED lifespans are encouraging, as they now satisfy the stability requirement for commercial organic LEDs (OLEDs). These results remove the critical concern that halide perovskite devices may be intrinsically unstable, paving the path toward industrial applications. △ Less

Submitted 16 April, 2022; originally announced April 2022.

Comments: This is a preprint of the paper prior to peer review. New and updated results may be available in the final version from the publisher

Journal ref: Nature Photonics 16, 637-643 (2022)

Ultralow-voltage operation of light-emitting diodes

Authors: Yaxiao Lian, Dongchen Lan, Shiyu Xing, Bingbing Guo, Runchen Lai, Baodan Zhao, Richard H. Friend, Dawei Di

Abstract: The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including perovskite and organic LEDs, that the minimum voltage required for light emission is the semiconductor bandgap divided by the elementary charge. Here we show for many cl… ▽ More The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including perovskite and organic LEDs, that the minimum voltage required for light emission is the semiconductor bandgap divided by the elementary charge. Here we show for many classes of LEDs, including those based on metal halide perovskite, organic, chalcogenide quantum-dot and commercial III-V semiconductors, photon emission can be generally observed at record-low driving voltages of 36%-60% of their bandgaps, corresponding to a large apparent energy gain of 0.6-1.4 eV per emitted photon. Importantly, for various classes of LEDs with very different modes of charge injection and recombination (dark saturation current densities ranging from ~10^-35 to ~10^-21 mA/cm2), their EL intensity-voltage curves under low voltages exhibit similar behaviors, revealing a universal origin of ultralow-voltage device operation. Finally, we demonstrate as a proof-of-concept that perovskite LEDs can transmit data efficiently to a silicon detector at 1V, a voltage below the silicon bandgap. Our work provides a fresh insight into the operational limits of electroluminescent diodes, highlighting the significant potential of integrating low-voltage LEDs with silicon electronics for next-generation communications and computational applications. △ Less

Submitted 3 August, 2021; originally announced August 2021.

Journal ref: Nature Communications 13, 3845 (2022)

Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit

Authors: Qian Zhou, Arfa Karani, Yaxiao Lian, Baodan Zhao, Richard H. Friend, Dawei Di

Abstract: The Shockley-Queisser (SQ) limit, introduced by W. Shockley and H. J. Queisser in 1961, is the most well-established fundamental efficiency limit for single-junction photovoltaic solar cells. For widely-studied semiconductors such as Si, GaAs and lead-halide perovskite, the SQ limits under standard solar illumination (1-sun) are 32.7%, 32.5% and 31% for bandgaps of 1.12 eV, 1.43 eV and 1.55 eV, re… ▽ More The Shockley-Queisser (SQ) limit, introduced by W. Shockley and H. J. Queisser in 1961, is the most well-established fundamental efficiency limit for single-junction photovoltaic solar cells. For widely-studied semiconductors such as Si, GaAs and lead-halide perovskite, the SQ limits under standard solar illumination (1-sun) are 32.7%, 32.5% and 31% for bandgaps of 1.12 eV, 1.43 eV and 1.55 eV, respectively. Here, we propose that the fundamental efficiency limits for single-junction solar cells may be surpassed via photon confinement, substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si, GaAs and methylammonium lead iodide (MAPbI3) perovskite cells under 1-sun. Such enhancement is possible through the containment of luminescent photons within the solar cell, allowing the suppression of both non-radiative and radiative recombination losses, which were considered inevitable in the classical SQ model. Importantly, restricting photon emission from the solar cells raises the open-circuit voltage (VOC) to values approaching the semiconductor bandgaps, surpassing the theoretical VOC values predicted by the SQ model. The fill factors of the cells are expected to increase substantially, resulting in current-voltage characteristics with very-high squareness for ideal diode operation. Our work introduces a new framework for improving solar cell performance beyond the conventional limits. △ Less

Submitted 8 June, 2021; originally announced June 2021.

Spin glass state in layered compound MnSb2Te4

Authors: Hao Li, Yaoxin Li, Yu-Kun Lian, Weiwei Xie, Ling Chen, **song Zhang, Yang Wu, Shoushan Fan

Abstract: As a sister compound and isostructural of MnBi2Te4, the high quality MnSb2Te4 single crystals are grown via solid-state reaction where prolonged annealing and narrow temperature window play critical roles on account of its thermal metastability. X-ray diffraction analysis on MnSb2Te4 single crystals reveals pronounced cation intermixing, 28.9(7)% Sb antisite defects on the Mn (3a) site and 19.3(6)… ▽ More As a sister compound and isostructural of MnBi2Te4, the high quality MnSb2Te4 single crystals are grown via solid-state reaction where prolonged annealing and narrow temperature window play critical roles on account of its thermal metastability. X-ray diffraction analysis on MnSb2Te4 single crystals reveals pronounced cation intermixing, 28.9(7)% Sb antisite defects on the Mn (3a) site and 19.3(6)% Mn antisite defects on the Sb (6c) site, compared with MnBi2Te4. Unlike antiferromagnetic (AFM) nature MnBi2Te4, MnSb2Te4 contains magnetic and antiferromagnetic competition and exhibits a spin glass (SG) state below 24 K. Its magnetic hysteresis, anisotropy, and relaxation process are investigated in detail with DC and AC magnetization measurements. Moreover, anomalous Hall effect as a p-type conductor is demonstrated through transport measurements. This work grants MnSb2Te4 a possible access to the future exploration of exotic quantum physics by removing the odd/even layer number restraint in intrinsic AFM MnBi2Te4-family materials as a result of the crossover between its magnetism and potential topology in the Sb-Te layer. △ Less

Submitted 2 April, 2021; originally announced April 2021.

Comments: 14 Pages, 5 figures

Skyrmion zoo in graphene at charge neutrality in a strong magnetic field

Authors: Jonathan Atteia, Yunlong Lian, Mark Oliver Goerbig

Abstract: As a consequence of the approximate spin-valley symmetry in graphene, the ground state of electrons in graphene at charge neutrality is a particular SU(4) quantum-Hall ferromagnet to minimize their exchange energy. If only the Coulomb interaction is taken into account, this ferromagnet can appeal either to the spin degree of freedom or equivalently to the valley pseudo-spin degree of freedom. This… ▽ More As a consequence of the approximate spin-valley symmetry in graphene, the ground state of electrons in graphene at charge neutrality is a particular SU(4) quantum-Hall ferromagnet to minimize their exchange energy. If only the Coulomb interaction is taken into account, this ferromagnet can appeal either to the spin degree of freedom or equivalently to the valley pseudo-spin degree of freedom. This freedom in choice is then limited by subleading energy scales that explicitly break the SU(4) symmetry, the simplest of which is given by the Zeeman effect that orients the spin in the direction of the magnetic field. In addition, there are also valley symmetry breaking terms that can arise from short-range interactions or electron-phonon couplings. Here, we build upon the phase diagram, which has been obtained by Kharitonov [Phys. Rev. B \textbf{85}, 155439 (2012)], in order to identify the different skyrmions that are compatible with these types of quantum-Hall ferromagnets. Similarly to the ferromagnets, the skyrmions at charge neutrality are described by the $\text{Gr}(2,4)$ Grassmannian at the center, which allows us to construct the skyrmion spinors. The different skyrmion types are then obtained by minimizing their energy within a variational approach, with respect to the remaining free parameters that are not fixed by the requirement that the skyrmion at large distances from their center must be compatible with the ferromagnetic background. We show that the different skyrmion types have a clear signature in the local, sublattice-resolved, spin magnetization, which is in principle accessible in scanning-tunneling microscopy and spectroscopy. △ Less

Submitted 26 October, 2020; v1 submitted 22 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. B 103, 035403 (2021)

Spin-valley skyrmions in graphene at filling factor $ν=-1$

Authors: Yunlong Lian, Mark O. Goerbig

Abstract: We model quantum Hall skyrmions in graphene monolayer at quarter filling by a theory of CP3 fields and study the energy minimizing skyrmions in presence of valley pseudospin anisotropy and Zeeman coupling. We present a diagram of all types of skyrmions in a wide range of the anisotropy parameters. For each type of skyrmion, we visualize it on three Bloch spheres, and present the profiles of its te… ▽ More We model quantum Hall skyrmions in graphene monolayer at quarter filling by a theory of CP3 fields and study the energy minimizing skyrmions in presence of valley pseudospin anisotropy and Zeeman coupling. We present a diagram of all types of skyrmions in a wide range of the anisotropy parameters. For each type of skyrmion, we visualize it on three Bloch spheres, and present the profiles of its texture on the graphene honeycomb lattice, thus providing references for the STM/STS imaging of spin-pseudospin textures in graphene monolayer in quantum Hall regime. Besides the spin and pseudospin skyrmions for the corresponding degrees of freedom of an electron in the N=0 Landau level, we discuss two unusual types -- the "entanglement skyrmion" whose texture lies in the space of the entanglement of spin and pseudospin, as well as the "deflated pseudospin skyrmion" with partial entanglement. For all skyrmion types, we study the dependence of the energy and the size of a skyrmion on the anisotropy parameters and perpendicular magnetic field. We also propose three ways to modify the anisotropy energy, namely the sample tilting, the substrate anisotropy and the valley pseudospin analogue of Zeeman coupling. △ Less

Submitted 8 February, 2017; originally announced February 2017.

Comments: 28 pages, 25 figures

Journal ref: Phys. Rev. B 95, 245428 (2017)

SU(4) Skyrmions in the $ν=\pm 1$ Quantum Hall State of Graphene

Authors: Yunlong Lian, Achim Rosch, Mark O. Goerbig

Abstract: We explore different skyrmion types in the lowest Landau level of graphene at a filling factor $ν=\pm 1$. In addition to the formation of spin and valley pseudospin skyrmions, we show that another type of spin-valley entangled skyrmions can be stabilized in graphene due to an approximate SU(4) spin-valley symmetry that is affected by sublattice symmetry-breaking terms. These skyrmions have a clear… ▽ More We explore different skyrmion types in the lowest Landau level of graphene at a filling factor $ν=\pm 1$. In addition to the formation of spin and valley pseudospin skyrmions, we show that another type of spin-valley entangled skyrmions can be stabilized in graphene due to an approximate SU(4) spin-valley symmetry that is affected by sublattice symmetry-breaking terms. These skyrmions have a clear signature in spin-resolved density measurements on the lattice scale, and we discuss the expected patterns for the different skyrmion types. △ Less

Submitted 14 July, 2016; v1 submitted 16 February, 2016; originally announced February 2016.

Comments: 5 pages, 3 figures ; 6 pages of supplementary material included ; version accepted for publication in PRL

Journal ref: Phys. Rev. Lett. 117, 056806 (2016)