-
Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure
Authors:
Yu-Meng Gao,
Yue-Jiao Zhang,
Xiao-Lin Zhao,
Xin-Yu Li,
Shu-Hui Wang,
Chen-Dong **,
Hu Zhang,
Ru-Qian Lian,
Rui-Ning Wang,
Peng-Lai Gong,
Jiang-Long Wang,
Xing-Qiang Shi
Abstract:
The electronic structure evolutions of few-layer black phosphorus (BP) under pressure shows a wealth of phenomena, such as the nonmonotonic change of direct gap at the Γ point, the layer-number dependence, and the distinct responses to normal and hydrostatic pressures. A full and unified understanding to these rich phenomena remains lacking. Here, we provide a unified understanding from the compet…
▽ More
The electronic structure evolutions of few-layer black phosphorus (BP) under pressure shows a wealth of phenomena, such as the nonmonotonic change of direct gap at the Γ point, the layer-number dependence, and the distinct responses to normal and hydrostatic pressures. A full and unified understanding to these rich phenomena remains lacking. Here, we provide a unified understanding from the competition between interlayer quasi-bonding (QB) interactions and intralayer chemical bonding interactions. The former decreases while the latter increases the band gap under pressure and the origin can be correlated to different combinations of inter- and intra-layer antibonding or bonding interactions at the band edges. More interestingly, the interlayer QB interactions are a coexistence of two categories of interactions, namely, the coexistence of interactions between bands of the same occupancy (occupied-occupied and empty-empty interactions) and of different occupancies (occupied-empty interaction); and, the overall effect is a four-level interaction, which explains the anomalous interlayer-antibonding feature of the conduction band edge of bilayer BP. Our current study lay the foundation for the electronic structure tuning of two-dimensional (2D) BP, and, our analysis method for multi-energy-level interactions can be applied to other 2D semiconductor homo- and hetero-structures that have occupied-empty interlayer interactions.
△ Less
Submitted 2 March, 2024;
originally announced March 2024.
-
Elemental topological ferroelectrics and polar metals of few-layer materials
Authors:
Hu Zhang,
Lulu Zhao,
RuiFeng Zhang,
Chendong **,
Ruqian Lian,
Peng-Lai Gong,
RuiNing Wang,
JiangLong Wang,
Xing-Qiang Shi
Abstract:
Ferroelectricity can exist in elemental phases as a result of charge transfers between atoms occupying inequivalent Wyckoff positions. We investigate the emergence of ferroelectricity in two-dimensional elemental materials with buckled honeycomb lattices. Various multi-bilayer structures hosting ferroelectricity are designed by stacking-engineering. Ferroelectric materials candidates formed by gro…
▽ More
Ferroelectricity can exist in elemental phases as a result of charge transfers between atoms occupying inequivalent Wyckoff positions. We investigate the emergence of ferroelectricity in two-dimensional elemental materials with buckled honeycomb lattices. Various multi-bilayer structures hosting ferroelectricity are designed by stacking-engineering. Ferroelectric materials candidates formed by group IV and V elements are predicted theoretically. Ultrathin Bi films show layer-stacking-dependent physical properties of ferroelectricity, topology, and metallicity. The two-bilayer Bi film with a polar stacking sequence is found to be an elemental topological ferroelectric material. Three and four bilayers Bi films with polar structures are ferroelectric-like elemental polar metals with topological nontrivial edge states. For Ge and Sn, trivial elemental polar metals are predicted. Our work reveals the possibility of design two-dimensional elemental topological ferroelectrics and polar metals by stacking-engineering.
△ Less
Submitted 25 September, 2023;
originally announced September 2023.
-
Momentum matching and band-alignment type in van der Waals heterostructures: Interfacial effects and materials screening
Authors:
Yue-Jiao Zhang,
Yin-Ti Ren,
Xiao-Huan Lv,
Xiao-Lin Zhao,
Rui Yang,
Nie-Wei Wang,
Chen-Dong **,
Hu Zhang,
Ru-Qian Lian,
Peng-Lai Gong,
Rui-Ning Wang,
Jiang-Long Wang,
Xing-Qiang Shi
Abstract:
Momentum-matched type II van der Waals heterostructures (vdWHs) have been designed by assembling layered two-dimensional semiconductors (2DSs) with special band-structure combinations - that is, the valence band edge at the Gamma point (the Brillouin-zone center) for one 2DS and the conduction band edge at the Gamma point for the other [Ubrig et al., Nat. Mater. 19, 299 (2020)]. However, the band…
▽ More
Momentum-matched type II van der Waals heterostructures (vdWHs) have been designed by assembling layered two-dimensional semiconductors (2DSs) with special band-structure combinations - that is, the valence band edge at the Gamma point (the Brillouin-zone center) for one 2DS and the conduction band edge at the Gamma point for the other [Ubrig et al., Nat. Mater. 19, 299 (2020)]. However, the band offset sizes, band-alignment types, and whether momentum matched or not, all are affected by the interfacial effects between the component 2DSs, such as the quasichemical-bonding (QB) interaction between layers and the electrical dipole moment formed around the vdW interface. Here, based on density-functional theory calculations, first we probe the interfacial effects (including different QBs for valence and conduction bands, interface dipole, and, the synergistic effects of these two aspects) on band-edge evolution in energy and valley (location in the Brillouin zone) and the resulting changes in band alignment and momentum matching for a typical vdWH of monolayer InSe and bilayer WS2, in which the band edges of subsystems satisfy the special band-structure combination for a momentum-matched type II vdWH. Then, based on the conclusions of the studied interfacial effects, we propose a practical screening method for robust momentum-matched type II vdWHs. This practical screening method can also be applied to other band alignment types. Our current study opens a way for practical screening and designing of vdWHs with robust momentum-matching and band alignment type.
△ Less
Submitted 22 June, 2023;
originally announced June 2023.
-
Copper-based charge transfer multiferroics with a $d^9$ configuration
Authors:
Hu Zhang,
RuiFeng Zhang,
Lulu Zhao,
Chendong **,
Ruqian Lian,
Peng-Lai Gong,
RuiNing Wang,
JiangLong Wang,
Xing-Qiang Shi
Abstract:
Multiferroics are materials with a coexistence of magnetic and ferroelectric order allowing the manipulation of magnetism by applications of an electric field through magnetoelectric coupling effects. Here we propose an idea to design a class of multiferroics with a $d^9$ configuration using the magnetic order in copper-oxygen layers appearing in copper oxide high-temperature superconductors by in…
▽ More
Multiferroics are materials with a coexistence of magnetic and ferroelectric order allowing the manipulation of magnetism by applications of an electric field through magnetoelectric coupling effects. Here we propose an idea to design a class of multiferroics with a $d^9$ configuration using the magnetic order in copper-oxygen layers appearing in copper oxide high-temperature superconductors by inducing ferroelectricity. Copper-based charge transfer multiferroics SnCuO2 and PbCuO2 having the inversion symmetry breaking $P4mm$ polar space group are predicted to be such materials. The active inner s electrons in Sn and Pb hybridize with O $2p$ states leading the buckling in copper-oxygen layers and thus induces ferroelectricity, which is known as the lone pair mechanism. As a result of the $d^9$ configuration, SnCuO2 and PbCuO2 are charge transfer insulators with the antiferromagnetic ground state of the moment on Cu retaining some strongly correlated physical properties of parent compounds of copper oxide high-temperature superconductors. Our work reveals the possibility of designing multiferroics based on copper oxide high-temperature superconductors.
△ Less
Submitted 2 June, 2023;
originally announced June 2023.
-
From a superconductor NdNiO$_2$ to a Mott multiferroic BiNiO$_2$
Authors:
Hu Zhang,
RuiFeng Zhang,
Lulu Zhao,
Chendong **,
Ruqian Lian,
Peng-Lai Gong,
RuiNing Wang,
JiangLong Wang,
Xing-Qiang Shi
Abstract:
Motivated by the recently discovered superconductivity in Sr-doped nickelate oxides NdNiO$_2$, we predict a material BiNiO$_2$ that provides an opportunity to study the intertwined ferroelectricity, metallicity, and magnetism in a crystal with very simple atomic structures. There is a ferroelectric structural transition from the nonpolar phase with the P4/mmm space group to the polar phase with th…
▽ More
Motivated by the recently discovered superconductivity in Sr-doped nickelate oxides NdNiO$_2$, we predict a material BiNiO$_2$ that provides an opportunity to study the intertwined ferroelectricity, metallicity, and magnetism in a crystal with very simple atomic structures. There is a ferroelectric structural transition from the nonpolar phase with the P4/mmm space group to the polar phase with the P4mm space group, which is driven by the lone pair on Bi. Calculations based on the Heyd-Scuseria-Ernzerhof hybrid density functional reveal that both the nonmagnetic and ferromagnetic states are metallic for nonpolar and polar phases, while the lowest energy ground-state for polar BiNiO$_2$ is a Hubbard Mott insulator with the G-type antiferromagnetic spin configurations. As a ferroelectric material with an electric polarization of 0.49 C/m2, it may be possible to control the magnetic order in BiNiO$_2$ by an applied electric field. The replacement of Nd by Bi serves as a connecting link between a high-temperature superconductor and a Mott multiferroic. Our work supports a route towards strongly correlated ferroelectrics.
△ Less
Submitted 31 January, 2023;
originally announced February 2023.
-
Spin field-effect transistors based on massless birefringent Dirac fermions in polar Dirac semimetals
Authors:
Hu Zhang,
Chendong **,
Ruqian Lian,
Peng-Lai Gong,
RuiNing Wang,
JiangLong Wang,
Xing-Qiang Shi
Abstract:
The Datta-Das-type spin field-effect transistor, using a two-dimensional electron gas in a semiconductor heterostructure as a channel, plays a key role in spintronics. Here, we theoretically present a type of spin field-effect transistor based on massless birefringent Dirac fermions in polar Dirac semimetals. The manipulation of spin arises from the existence of the strong spin-orbit coupling, pol…
▽ More
The Datta-Das-type spin field-effect transistor, using a two-dimensional electron gas in a semiconductor heterostructure as a channel, plays a key role in spintronics. Here, we theoretically present a type of spin field-effect transistor based on massless birefringent Dirac fermions in polar Dirac semimetals. The manipulation of spin arises from the existence of the strong spin-orbit coupling, polar space groups, and Dirac cones in a single phase. The oscillatory channel conductance can be controlled by the sign of gate voltage in addition to its magnitude due to the gapless band structures of polar Dirac semimetals. Such spin field-effect transistor provides guidance for the further design of spintronic devices.
△ Less
Submitted 31 May, 2022;
originally announced May 2022.
-
Double version of the Rashba and Dresselhaus spin-orbit coupling
Authors:
Hu Zhang,
Lulu Zhao,
Chendong **,
Ruqian Lian,
Peng-Lai Gong,
RuiNing Wang,
JiangLong Wang,
Xing-Qiang Shi
Abstract:
The Rashba and Dresselhaus types of spin-orbit coupling are two typical linear coupling forms. We establish the fundamental physics of a model which can be viewed as the double version of the Rashba and Dresselhaus spin-orbit coupling. This model describes the low energy physics of a class of massless Dirac fermions in spin-orbit systems. The physical properties of the massless Dirac fermions are…
▽ More
The Rashba and Dresselhaus types of spin-orbit coupling are two typical linear coupling forms. We establish the fundamental physics of a model which can be viewed as the double version of the Rashba and Dresselhaus spin-orbit coupling. This model describes the low energy physics of a class of massless Dirac fermions in spin-orbit systems. The physical properties of the massless Dirac fermions are determined by the mathematical relations of spin-orbit coefficients. For equal Rashba and Dresselhauss coupling constants, k-independent eigenspinors and a persistent spin helix combined with massless birefringent Dirac fermions emerge in this model. The spin-orbit coupled systems described by this model have potential technological applications from spintronics to quantum computation.
△ Less
Submitted 13 April, 2022;
originally announced April 2022.
-
Hole- and electron-injection driven phase transitions in transition metal dichalcogenides and beyond: A unified understanding
Authors:
Xiao-Huan Lv,
Meng-Qi Wu,
Yin-Ti Ren,
Rui-Ning Wang,
Hu Zhang,
Chen-Dong **,
Ru-Qian Lian,
Peng-Lai Gong,
Xing-Qiang Shi,
Jiang-Long Wang
Abstract:
The phase transitions among polymorphic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention for their potential in enabling distinct functionalities in the same material for making integrated devices. Electron-injection to TMDs has been proved to be a feasible way to drive structural phase transition from the semiconducting H-phase to the semimetal dT-p…
▽ More
The phase transitions among polymorphic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention for their potential in enabling distinct functionalities in the same material for making integrated devices. Electron-injection to TMDs has been proved to be a feasible way to drive structural phase transition from the semiconducting H-phase to the semimetal dT-phase. In this contribution, based on density-functional theory (DFT) calculations, firstly we demonstrate that hole-injection drives the transition of the H-phase more efficiently to the metallic T-phase than to the semimetallic dT-phase for group VI-B TMDs (MoS2, WS2, and MoSe2, etc.). The origin can be attributed to the smaller work function of the T-phase than that of the dT-phase. Our work function analysis can distinguish the T and dT phases quantitatively while it is challenging for the commonly used crystal field splitting analysis. In addition, our analysis provides a unified understanding for both hole- and electron-injection induced phase transitions for 2D materials beyond TMDs, such as the newly synthesized MoSi2N4 family. Moreover, the hole-driven T-phase transition mechanism can explain the recent experiment of WS2 phase transition by hole-do** with yttrium (Y) atoms. Using 1/3 Y-doped WS2 and MoSe2 as examples, we show that the Mo and W valency increases to 5+. These above findings open up an avenue to obtain the metallic T-phase, which expands the possible stable phases of 2D materials.
△ Less
Submitted 4 December, 2021;
originally announced December 2021.
