Optical absorption window in Na$_3$Bi based three-dimensional Dirac electronic system
Authors:
Q. N. Li,
W. Xu,
Y. M. Xiao,
L. Ding,
B. Van Duppen,
F. M. Peeters
Abstract:
We present a detailed theoretical study of the optoelectronic properties of a Na$_3$Bi-based three-dimensional Dirac electronic system (3DDES). The optical conductivity is evaluated using the energy-balance equation derived from a Boltzmann equation, where the electron Hamiltonian is taken from a simplified $\mathbf{k}\cdotp \mathbf{p}$ approach. We find that for short-wavelength irradiation, the…
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We present a detailed theoretical study of the optoelectronic properties of a Na$_3$Bi-based three-dimensional Dirac electronic system (3DDES). The optical conductivity is evaluated using the energy-balance equation derived from a Boltzmann equation, where the electron Hamiltonian is taken from a simplified $\mathbf{k}\cdotp \mathbf{p}$ approach. We find that for short-wavelength irradiation, the optical absorption in Na$_3$Bi is mainly due to inter-band electronic transitions. In contrast to the universal optical conductance observed for graphene, the optical conductivity for Na$_3$Bi based 3DDES depends on the radiation frequency but not on temperature, carrier density and electronic relaxation time. In the radiation wavelength regime of about 5 $μm<λ<$ 200 $μm$, an optical absorption window is found. This is similar to what is observed in graphene. The position and width of the absorption window depend on the direction of the light polarization and sensitively on temperature, carrier density, and electronic relaxation time. Particularly, we demonstrate that the inter-band optical absorption channel can be switched on and off by applying the gate voltage. This implies that similar to graphene, Na$_3$Bi based 3DDES can also be applied in infrared electro-optical modulators. Our theoretical findings are helpful in gaining an in-depth understanding of the basic optoelectronic properties of recently discovered 3DDESs.
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Submitted 7 April, 2024;
originally announced April 2024.
Anisotropic and tunable optical conductivity of a two-dimensional semi-Dirac system in the presence of elliptically polarized radiation
Authors:
H. Y. Zhang,
Y. M. Xiao,
Q. N. Li,
L. Ding,
B. Van Duppen,
W. Xu,
F. M. Peeters
Abstract:
We investigate the effect of ellipticity ratio of the polarized radiation field on optoelectronic properties of a two-dimensional (2D) semi-Dirac (SD) system. The optical conductivity is calculated within the energy balance equation approach derived from the semiclassical Boltzmann equation. We find that there exists the anisotropic optical absorption induced via both the intra- and interband elec…
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We investigate the effect of ellipticity ratio of the polarized radiation field on optoelectronic properties of a two-dimensional (2D) semi-Dirac (SD) system. The optical conductivity is calculated within the energy balance equation approach derived from the semiclassical Boltzmann equation. We find that there exists the anisotropic optical absorption induced via both the intra- and interband electronic transition channels in the perpendicular $xx$ and $yy$ directions. Furthermore, we examine the effects of the ellipticity ratio, the temperature, the carrier density, and the band-gap parameter on the optical conductivity of the 2D SD system placed in transverse and vertical directions, respectively. It is shown that the ellipticity ratio, temperature, carrier density, and band-gap parameter can play the important roles in tuning the strength, peak position, and shape of the optical conductivity spectrum. The results obtained from this study indicate that the 2D SD system can be a promising anisotropic and tunable optical and optoelectronic material for applications in innovative 2D optical and optoelectronic devices, which are active in the infrared and terahertz bandwidths.
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Submitted 20 March, 2022;
originally announced March 2022.
