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Designing self-adaptive network with thermodynamics
Authors:
Mingyang Bai,
Daqing Li
Abstract:
For real-world complex system constantly enduring perturbation, to achieve survival goal in changing yet unknown environments, the central problem is designing a self-adaptation strategy instead of fixed control strategies, which enables system to adjust its internal multi-scale structure according to environmental feedback. Inspired by thermodynamics, we develop a self-adaptive network utilizing…
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For real-world complex system constantly enduring perturbation, to achieve survival goal in changing yet unknown environments, the central problem is designing a self-adaptation strategy instead of fixed control strategies, which enables system to adjust its internal multi-scale structure according to environmental feedback. Inspired by thermodynamics, we develop a self-adaptive network utilizing only macroscopic information to achieve desired landscape through reconfiguring itself in unknown environments. By continuously estimating environment entropy, our designed self-adaptive network can adaptively realize desired landscape represented by topological measures. The adaptability of this network is achieved under several scenarios, including confinement on phase space and geographic constraint. The adaptation process is described by relative entropy corresponding to the Boltzmann H function, which decreases with time following unique power law distinguishing our self-adaptive network from memoryless systems. Moreover, we demonstrate the transformability of our self-adaptive network, as a critical mechanism of complex system resilience, allowing for transitions from one target landscape to another. Compared to data-driven methods, our self-adaptive network is understandable without careful choice of learning architecture and parameters. Our designed self-adaptive network could help to understand system intelligence through the lens of thermodynamics.
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Submitted 5 July, 2024;
originally announced July 2024.
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Gigantic-oxidative atomically layered epitaxy for designed complex oxides
Authors:
Guangdi Zhou,
Haoliang Huang,
Fengzhe Wang,
Heng Wang,
Qishuo Yang,
Zihao Nie,
Wei Lv,
Cui Ding,
Yueying Li,
Danfeng Li,
Yujie Sun,
Junhao Lin,
Guang-Ming Zhang,
Qi-Kun Xue,
Zhuoyu Chen
Abstract:
In designing material functionality within the intricate realm of transition metal oxides, lattice structure and d-orbital occupancy are two principal determinants of the correlated physical properties, such as superconductivity. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, kinetic mobility, and synthesis precision, particularly…
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In designing material functionality within the intricate realm of transition metal oxides, lattice structure and d-orbital occupancy are two principal determinants of the correlated physical properties, such as superconductivity. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, kinetic mobility, and synthesis precision, particularly for oxidation-demanding phases. We introduce a methodology, namely the gigantic-oxidative atomically layered epitaxy (GOAL-Epitaxy), enhancing oxidation power 3-4 orders of magnitude beyond oxide molecular beam epitaxy (OMBE) and pulsed laser deposition (PLD), while ensuring atomic-layer-by-layer growth of designed complex structures. Consequently, thermodynamic stability is markedly augmented at elevated temperatures, improving growth kinetics. We demonstrate the accurate synthesis of complex nickelates and cuprates, especially an artificially designed structure as a parent of high-temperature superconductivity, in which alternating single and double NiO2 layers possess distinct nominal d-orbital occupancy. The GOAL-Epitaxy enables material discovery within the vastly broadened growth parameter space.
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Submitted 24 June, 2024;
originally announced June 2024.
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A Free-fermion Formulation of Two-dimensional Ising Models
Authors:
De-Zhang Li,
Xin Wang,
Xiao-Bao Yang
Abstract:
Ising model is a famous toy model in condensed matter and statistical physics. In this work we present a free-fermion formulation of the two-dimensional classical Ising models on the honeycomb, triangular and Kagomé lattices. Each Ising model is studied in the case of a zero field and the case of an imaginary field i(π/2)k_BT. We employ the decorated lattice technique, star-triangle transformation…
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Ising model is a famous toy model in condensed matter and statistical physics. In this work we present a free-fermion formulation of the two-dimensional classical Ising models on the honeycomb, triangular and Kagomé lattices. Each Ising model is studied in the case of a zero field and the case of an imaginary field i(π/2)k_BT. We employ the decorated lattice technique, star-triangle transformation and weak-graph expansion method to exactly map each Ising model in both cases into an eight-vertex model on the square lattice. The resulting vertex weights are shown to satisfy the free-fermion condition. In the zero field case, each Ising model is an even free-fermion model. In the case of the imaginary field, the Ising model on the honeycomb lattice is an even free-fermion model while those on the triangular and Kagomé lattices are odd free-fermion models. The exact solution of the Kagomé lattice Ising model in the imaginary field i(π/2)k_BT is obtained, which has not been reported in previous works. The frustrated Ising models on the triangular and Kagomé lattices in the imaginary field still exhibit a non-zero residual entropy.
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Submitted 31 May, 2024;
originally announced June 2024.
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Correlated Electronic Structure and Density-Wave Gap in Trilayer Nickelate La4Ni3O10
Authors:
X. Du,
Y. D. Li,
Y. T. Cao,
C. Y. Pei,
M. X. Zhang,
W. X. Zhao,
K. Y. Zhai,
R. Z. Xu,
Z. K. Liu,
Z. W. Li,
J. K. Zhao,
G. Li,
Y. L. Chen,
Y. P. Qi,
H. J. Guo,
L. X. Yang
Abstract:
The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popular…
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The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popularity of nickelates in the Ruddlesden-Popper phase. In this study, combining high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structures of La4Ni3O10 at ambient pressure. We reveal a high resemblance of La4Ni3O10 with La3Ni2O7 in the orbital-dependent fermiology and electronic structure, suggesting a similar electronic correlation between the two compounds. The temperature-dependent measurements imply an orbital-dependent energy gap related to the density-wave transition in La4Ni3O10. By comparing the theoretical pressure-dependent electronic structure, clues about the superconducting high-pressure phase can be deduced from the ambient measurements, providing crucial information for deciphering the unconventional superconductivity in nickelates.
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Submitted 30 May, 2024;
originally announced May 2024.
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High efficient sunlight-driven CO2 hydrogenation to methanol over NiZn intermetallic catalysts under atmospheric pressure
Authors:
Linjia Han,
Fanqi Meng,
Xianhua Bai,
Qixuan Wu,
Yanhong Luo,
Jiangjian Shi,
Yaguang Li,
Dongmei Li,
Qingbo Meng
Abstract:
The synthesis of solar methanol through direct CO2 hydrogenation using solar energy is of great importance in advancing a sustainable energy economy. In this study, non-precious NiZn intermetallic/ZnO catalyst is reported to catalyze the hydrogenation of CO2 to methanol using sunlight irradiation (1sun). The NiZn-ZnO interface is identified as the active site to stabilize the key intermediates of…
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The synthesis of solar methanol through direct CO2 hydrogenation using solar energy is of great importance in advancing a sustainable energy economy. In this study, non-precious NiZn intermetallic/ZnO catalyst is reported to catalyze the hydrogenation of CO2 to methanol using sunlight irradiation (1sun). The NiZn-ZnO interface is identified as the active site to stabilize the key intermediates of HxCO*. At ambient pressure, the NiZn-ZnO catalyst demonstrates a methanol production rate of 127.5 umol g-1h-1 from solar driven CO2 hydrogenation, with a remarkable 100% selectivity towards methanol in the total organic products. Notably, this production rate stands as the highest record for photothermic CO2 hydrogenation to methanol in continuous-flow reactors with sunlight as the only requisite energy input. This discovery not only paves the way for the development of novel catalysts for CO2 hydrogenation to methanol but also marks a significant stride towards a full solar-driven chemical energy storage.
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Submitted 22 April, 2024;
originally announced April 2024.
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Residual Entropy of Hexagonal Ice and Cubic Ice: A Transfer Matrix Description
Authors:
De-Zhang Li,
Yu-Jie Cen,
Xin Wang,
Xiao-Bao Yang
Abstract:
Residual entropy of ice systems has long been a significant and intriguing issue in condensed matter physics and statistical mechanics. The exact solutions for the residual entropy of realistic three-dimensional ice systems remain unknown. In this study, we focus on two typical realistic ice systems, namely the hexagonal ice (ice Ih) and cubic ice (ice Ic). We present a transfer matrix description…
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Residual entropy of ice systems has long been a significant and intriguing issue in condensed matter physics and statistical mechanics. The exact solutions for the residual entropy of realistic three-dimensional ice systems remain unknown. In this study, we focus on two typical realistic ice systems, namely the hexagonal ice (ice Ih) and cubic ice (ice Ic). We present a transfer matrix description of the number of ice-ruled configurations for these two systems. First, a transfer matrix M is constructed for ice Ic, where each element is the number of ice-ruled configurations of a hexagonal monolayer under certain condition. The product of M and its transpose corresponds to a bilayer unit in ice Ih lattice, therefore is exactly a transfer matrix for ice Ih. Making use of this, we simply show that the residual entropy of ice Ih is not less than that of ice Ic in the thermodynamic limit, which was first proved by Onsager in 1960s. Furthermore, we find an alternative transfer matrix M' for ice Ih, which is based on a monolayer periodic unit. Some interesting properties of M, MMT and M' are illustrated, specifically the summation of all elements, the element in the first row and first column, and the trace. Each property is equivalent with the residual entropy of a two-dimensional ice model. Our work rediscovers the relationship between the residual entropies of ice Ih and ice Ic, and provides an effective description for various two-dimensional ice models.
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Submitted 22 April, 2024;
originally announced April 2024.
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Multi-interface engineering to realize all-solution processed highly efficient Kesterite solar cells
Authors:
Licheng Lou,
Kang Yin,
**lin Wang,
Yuan Li,
Xiao Xu,
Bowen Zhang,
Menghan Jiao,
Shudan Chen,
Tan Guo,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Qingbo Meng
Abstract:
With the rapid development of Kesterite Cu2ZnSn(S, Se)4 solar cells in the past few years, how to achieve higher cost-performance ratio has become an important topic in the future development and industrialization of this technology. Herein, we demonstrate an all-solution route for the cell fabrication, in particular targeting at the solution processed window layer comprised of ZnO nanoparticles/A…
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With the rapid development of Kesterite Cu2ZnSn(S, Se)4 solar cells in the past few years, how to achieve higher cost-performance ratio has become an important topic in the future development and industrialization of this technology. Herein, we demonstrate an all-solution route for the cell fabrication, in particular targeting at the solution processed window layer comprised of ZnO nanoparticles/Ag nanowires. A multi-interface engineering strategy assisted by organic polymers and molecules is explored to synergistically improve the film deposition, passivate the surface defects and facilitate the charge transfer. These efforts help us achieve high-performance and robust Kesterite solar cells at extremely low time and energy costs, with efficiency records of 14.37% and 13.12% being realized in rigid and flexible Kesterite solar cells, respectively. Our strategy here is also promising to be transplanted into other solar cells with similar geometric and energy band structures, hel** reduce production costs and shorten the production cycle (i.e. increasing production capacity) of these photovoltaic industries.
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Submitted 10 April, 2024;
originally announced April 2024.
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Vacancy enhanced cation ordering enables >15% efficiency in Kesterite solar cells
Authors:
**lin Wang,
Licheng Lou,
Kang Yin,
Fanqi Meng,
Xiao Xu,
Menghan Jiao,
Bowen Zhang,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Qingbo Meng
Abstract:
Atomic disorder, a widespread problem in compound crystalline materials, is a imperative affecting the performance of multi-chalcogenide Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic device known for its low cost and environmental friendliness. Cu-Zn disorder is particularly abundantly present in CZTSSe due to its extraordinarily low formation energy, having induced high-concentration deep defects and sev…
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Atomic disorder, a widespread problem in compound crystalline materials, is a imperative affecting the performance of multi-chalcogenide Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic device known for its low cost and environmental friendliness. Cu-Zn disorder is particularly abundantly present in CZTSSe due to its extraordinarily low formation energy, having induced high-concentration deep defects and severe charge loss, while its regulation remains challenging due to the contradiction between disorder-order phase transition thermodynamics and atom-interchange kinetics. Herein, through introducing more vacancies in the CZTSSe surface, we explored a vacancy-assisted strategy to reduce the atom-interchange barrier limit to facilitate the Cu-Zn ordering kinetic process. The improvement in the Cu-Zn order degree has significantly reduced the charge loss in the device and helped us realize 15.4% (certified at 14.9%) and 13.5% efficiency (certified at 13.3%) in 0.27 cm2 and 1.1 cm2-area CZTSSe solar cells, respectively, thus bringing substantial advancement for emerging inorganic thin-film photovoltaics.
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Submitted 8 April, 2024;
originally announced April 2024.
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Out-of-plane orientated self-trapped excitons enabled polarized light guiding in 2D perovskites
Authors:
Junze Li,
Junchao Hu,
Ting Luo,
Dongliang Chen,
Yingying Chen,
Zeyi Liu,
Dingshan Gao,
Xinglin Wen,
Dehui Li
Abstract:
Active optical waveguides combine light source and waveguides together in an individual component, which are essential for the integrated photonic chips. Although 1D luminescent materials based optical waveguides were extensively investigated, 2D waveguides allow photons to flow within a plane and serve as an ideal component for the ultracompact photonic circuits. Nevertheless, light guiding in 2D…
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Active optical waveguides combine light source and waveguides together in an individual component, which are essential for the integrated photonic chips. Although 1D luminescent materials based optical waveguides were extensively investigated, 2D waveguides allow photons to flow within a plane and serve as an ideal component for the ultracompact photonic circuits. Nevertheless, light guiding in 2D planar structures normally relies on the precise control of molecular orientation, which is complicated and low yield. Here, we report a strategy to guide polarized light in 2D microflakes by making use of the out-of-plane (OP) orientation of self-trapped excitons in as-synthesized 2D perovskite microplates. A space confined crystallization method is developed to synthesize 2D perovskite microflakes with dominated broad self-trapped excitons emission at room temperature, which are highly OP orientated with a percentage of the OP component over 85%. Taking advantages of the negligible absorption coefficient and improved coupling efficiency of OP orientated self-trapped exciton emission to the planar waveguide mode of the as-synthesized perovskite microflakes, we have achieved a broadband polarized light guiding with a full width at half maximum over 120 nm. Our findings provide a promising platform for the development of ultracompact photonic circuits.
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Submitted 7 April, 2024;
originally announced April 2024.
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Gradient bandgap enables >13% efficiency sulfide Kesterite solar cells with open-circuit voltage over 800 mV
Authors:
Kang Yin,
**lin Wang,
Licheng Lou,
Xiao Xu,
Bowen Zhang,
Menghan Jiao,
Jiangjian Shi,
Dongmei Li,
Huijue Wu,
Yanhong Luo,
Qingbo Meng
Abstract:
Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in contr…
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Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in controlling the gradient distribution of alloying elements at high temperatures. Herein, targeting at the Cd alloyed CZTS, we propose a pre-crystallization strategy to reduce the intense vertical mass transport and Cd rapid diffusion in the film growth process, thereby realizing front Cd-gradient CZTS absorber. The Cd-gradient CZTS absorber, exhibiting downward bending conduction band structure, has significantly enhanced the minority carrier transport and additionally improved band alignment and interface property of CZTS/CdS heterojunction. Ultimately, we have achieved a champion total-area efficiency of 13.5% (active-area efficiency: 14.1%) in the cell and in particular a high open-circuit voltage of >800 mV. We have also achieved a certified total-area cell efficiency of 13.16%, realizing a substantial step forward for the pure sulfide Kesterite solar cell.
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Submitted 30 March, 2024;
originally announced April 2024.
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Revealing the Microscopic Mechanism of Elementary Vortex Pinning in Superconductors
Authors:
C. Chen,
Y. Liu,
Y. Chen,
Y. N. Hu,
T. Z. Zhang,
D. Li,
X. Wang,
C. X. Wang,
Z. Y. W. Lu,
Y. H. Zhang,
Q. L. Zhang,
X. L. Dong,
R. Wang,
D. L. Feng,
T. Zhang
Abstract:
Vortex pinning is a crucial factor that determines the critical current of practical superconductors. However, the understanding of its underlying mechanism has long been phenomenological without a clear microscopic description. Here using high-resolution scanning tunneling microscopy, we studied single vortex pinning induced by point defect in layered FeSe-based superconductors. We found the defe…
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Vortex pinning is a crucial factor that determines the critical current of practical superconductors. However, the understanding of its underlying mechanism has long been phenomenological without a clear microscopic description. Here using high-resolution scanning tunneling microscopy, we studied single vortex pinning induced by point defect in layered FeSe-based superconductors. We found the defect-vortex interaction drives low-energy vortex bound states away from EF, resulting a mini gap which effectively lowered the energy of vortex and caused the pinning. By measuring the local density-of-states, we directly obtained the elementary pinning energy and estimated the pinning force through the spatial gradient of pinning energy. The results align with the bulk critical current measurement. We further show that a general microscopic quantum model with considering defect-vortex interaction can well capture our observation. It indicates the local pairing near pinned vortex core is actually enhanced, which is beyond the traditional understanding that non-superconducting regions pin vortices. Our study thus revealed a general microscopic mechanism of vortex pinning in superconductors.
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Submitted 26 March, 2024;
originally announced March 2024.
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UV- and X-ray-activated broadband NIR garnet-type Ca3Ga2Sn3O12:Fe3+ phosphors with efficient persistent luminescence
Authors:
Yongjie Wang,
Qingzhou Bu,
Dongshuo Li,
Shuai Yang,
Li Li,
Guotao Xiang,
Sha Jiang,
Ying Chang,
Chuan **g,
Xianju Zhou,
Lev-Ivan Bulyk,
Andrzej Suchocki
Abstract:
Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) are compact light sources of great interest for NIR spectroscopy applications. Beyond typical Cr3+-activated NIR-emitting phosphors, there exists a strong demand for Cr3+-free alternatives with high efficiency and broadband emission to rich the landscape of NIR luminescent materials and extend their range of application fields. H…
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Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) are compact light sources of great interest for NIR spectroscopy applications. Beyond typical Cr3+-activated NIR-emitting phosphors, there exists a strong demand for Cr3+-free alternatives with high efficiency and broadband emission to rich the landscape of NIR luminescent materials and extend their range of application fields. Here, we report a series of Fe3+-activated Ca3Ga2Sn3O12 garnet-type phosphors exhibiting broadband NIR emission in the 650-1000 nm range attributed to 4T1(G)-->6A1(S) transition, with a maximum at 754 nm and a FWHM of 89 nm upon UV excitation. The spectroscopic results were analyzed according to the Tanabe-Sugano theory from which the crystal field parameter Dq and Racah parameters B and C were obtained for the octahedrally coordinated Fe3+ ion. Notably, the NIR persistent luminescence lasting over 1 h was detected following UV or X-ray irradiation. The possible mechanism involving electron traps was proposed to explain the observed persistent luminescence. Furthermore, a NIR pc-LED was fabricated by coating synthesized phosphor on a UV chip, and its performance was evaluated to assess its potential suitability as a NIR light source. Our discovery of novel type of nontoxic Fe3+-activated broadband NIR luminescence phosphors with efficient NIR persistent luminescence paves the way for discovering Cr3+-free multifunctional NIR luminescence materials, thereby expanding their application possibilities.
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Submitted 22 March, 2024;
originally announced March 2024.
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Ultrafast Dynamics of Bilayer and Trilayer Nickelate Superconductors
Authors:
Y. D. Li,
Y. T. Cao,
L. Y. Liu,
P. Peng,
H. Lin,
C. Y. Pei,
M. X. Zhang,
H. Wu,
X. Du,
W. X. Zhao,
K. Y. Zhai,
J. K. Zhao,
M. -L. Lin,
P. H. Tan,
Y. P. Qi,
G. Li,
H. J. Guo,
Luyi Yang,
L. X. Yang
Abstract:
In addition to the pressurized high-temperature superconductivity, bilayer and trilayer nickelate superconductors Lan+1NinO3n+1 (n = 2 and 3) exhibit many intriguing properties at ambient pressure, such as orbital-dependent electronic correlation, non-Fermi liquid behavior, and density-wave transitions. Here, using ultrafast reflectivity measurement, we observe a drastic difference between the ult…
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In addition to the pressurized high-temperature superconductivity, bilayer and trilayer nickelate superconductors Lan+1NinO3n+1 (n = 2 and 3) exhibit many intriguing properties at ambient pressure, such as orbital-dependent electronic correlation, non-Fermi liquid behavior, and density-wave transitions. Here, using ultrafast reflectivity measurement, we observe a drastic difference between the ultrafast dynamics of the bilayer and trilayer nickelates at ambient pressure. Firstly, we observe a coherent phonon mode in La4Ni3O10 involving the collective vibration of La, Ni, and O atoms, which is absent in La3Ni2O7. Secondly, the temperature-dependent relaxation time diverges near the density-wave transition temperature of La4Ni3O10, in drastic contrast to kink-like changes in La3Ni2O7. Moreover, we estimate the electron-phonon coupling constants to be 0.05~0.07 and 0.12~0.16 for La3Ni2O7 and La4Ni3O10, respectively, suggesting a relatively minor role of electron-phonon coupling in the electronic properties of Lan+1NinO3n+1. Our work not only sheds light on the relevant microscopic interaction but also establishes a foundation for further studying the interplay between superconductivity and density-wave transitions in nickelate superconductors.
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Submitted 7 March, 2024;
originally announced March 2024.
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Prediction of stable nanoscale skyrmions in monolayer Fe$_5$GeTe$_2$
Authors:
Dongzhe Li,
Soumyajyoti Haldar,
Leo Kollwitz,
Hendrik Schrautzer,
Moritz A. Goerzen,
Stefan Heinze
Abstract:
Using first-principles calculations and atomistic spin simulations, we predict stable isolated skyrmions with a diameter below 10 nm in a monolayer of the two-dimensional van der Waals ferromagnet Fe$_5$GeTe$_2$, a material of significant experimental interest. A very large Dzyaloshinskii-Moriya interaction (DMI) is observed due to the intrinsic broken inversion symmetry and strong spin-orbit coup…
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Using first-principles calculations and atomistic spin simulations, we predict stable isolated skyrmions with a diameter below 10 nm in a monolayer of the two-dimensional van der Waals ferromagnet Fe$_5$GeTe$_2$, a material of significant experimental interest. A very large Dzyaloshinskii-Moriya interaction (DMI) is observed due to the intrinsic broken inversion symmetry and strong spin-orbit coupling for monolayer Fe$_5$GeTe$_2$. We show that the nearest-neighbor approximation, often used in literature, fails to describe the DMI. The strong DMI together with moderate in-plane magnetocrystalline anisotropy energy allows to stabilize nanoscale skyrmions in out-of-plane magnetic fields above $\approx 2$~T. The energy barriers of skyrmions in monolayer Fe$_5$GeTe$_2$ are comparable to those of state-of-the-art transition-metal ultra-thin films. We further predict that these nanoscale skyrmions can be stable for hours at temperatures up to 20 K.
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Submitted 10 June, 2024; v1 submitted 31 January, 2024;
originally announced January 2024.
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Ultra-broadband near-field Josephson microwave microscopy
Authors:
** Zhang,
Yang-Yang Lyu,
**g**g Lv,
Zihan Wei,
Shixian Chen,
Chenguang Wang,
Hongmei Du,
Dingding Li,
Zixi Wang,
Shoucheng Hou,
Runfeng Su,
Hancong Sun,
Yuan Du,
Li Du,
Liming Gao,
Yong-Lei Wang,
Huabing Wang,
Peiheng Wu
Abstract:
Advanced microwave technologies constitute the foundation of a wide range of modern sciences, including quantum computing, microwave photonics, spintronics, etc. To facilitate the design of chip-based microwave devices, there is an increasing demand for state-of-the-art microscopic techniques capable of characterizing the near-field microwave distribution and performance. In this work, we integrat…
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Advanced microwave technologies constitute the foundation of a wide range of modern sciences, including quantum computing, microwave photonics, spintronics, etc. To facilitate the design of chip-based microwave devices, there is an increasing demand for state-of-the-art microscopic techniques capable of characterizing the near-field microwave distribution and performance. In this work, we integrate Josephson junctions onto a nano-sized quartz tip, forming a highly sensitive microwave mixer on-tip. This allows us to conduct spectroscopic imaging of near-field microwave distributions with high spatial resolution. Leveraging its microwave-sensitive characteristics, our Josephson microscope achieves a broad detecting bandwidth of up to 200 GHz with remarkable frequency and intensity sensitivities. Our work emphasizes the benefits of utilizing the Josephson microscope as a real-time, non-destructive technique to advance integrated microwave electronics.
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Submitted 23 January, 2024;
originally announced January 2024.
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Universal orbital and magnetic structures in infinite-layer nickelates
Authors:
M. Rossi,
H. Lu,
K. Lee,
B. H. Goodge,
J. Choi,
M. Osada,
Y. Lee,
D. Li,
B. Y. Wang,
D. Jost,
S. Agrestini,
M. Garcia-Fernandez,
Z. X. Shen,
Ke-** Zhou,
E. Been,
B. Moritz,
L. F. Kourkoutis,
T. P. Devereaux,
H. Y. Hwang,
W. S. Lee
Abstract:
We conducted a comparative study of the rare-earth infinite-layer nickelates films, RNiO2 (R = La, Pr, and Nd) using resonant inelastic X-ray scattering (RIXS). We found that the gross features of the orbital configurations are essentially the same, with minor variations in the detailed hybridization. For low-energy excitations, we unambiguously confirm the presence of damped magnetic excitations…
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We conducted a comparative study of the rare-earth infinite-layer nickelates films, RNiO2 (R = La, Pr, and Nd) using resonant inelastic X-ray scattering (RIXS). We found that the gross features of the orbital configurations are essentially the same, with minor variations in the detailed hybridization. For low-energy excitations, we unambiguously confirm the presence of damped magnetic excitations in all three compounds. By fitting to a linear spin-wave theory, comparable spin exchange coupling strengths and dam** coefficients are extracted, indicating a universal magnetic structure in the infinite-layer nickelates. Interestingly, while signatures of a charge order are observed in LaNiO2 in the quasi-elastic region of the RIXS spectrum, it is absent in NdNiO2 and PrNiO2. This prompts further investigation into the universality and the origins of charge order within the infinite-layer inickelates.
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Submitted 27 December, 2023;
originally announced December 2023.
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Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories
Authors:
Zhen-Cun Pan,
Dong Li,
Xing-Guo Ye,
Zheng Chen,
Zhao-Hui Chen,
An-Qi Wang,
Mingliang Tian,
Guangjie Yao,
Kaihui Liu,
Zhi-Min Liao
Abstract:
The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic computing. Two dimensional (2D) materials and their van der Waals heterostructures promote the development of MRAM technology, due to their atomically smooth interfaces and tunable physical properties. Here we report the al…
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The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic computing. Two dimensional (2D) materials and their van der Waals heterostructures promote the development of MRAM technology, due to their atomically smooth interfaces and tunable physical properties. Here we report the all-2D magnetoresistive memories featuring all electrical data reading and writing at room temperature based on WTe2/Fe3GaTe2/BN/Fe3GaTe2 heterostructures. The data reading process relies on the tunnel magnetoresistance of Fe3GaTe2/BN/Fe3GaTe2. The data writing is achieved through current induced polarization of orbital magnetic moments in WTe2, which exert torques on Fe3GaTe2, known as the orbit transfer torque (OTT) effect. In contrast to the conventional reliance on spin moments in spin transfer torque and spin orbit torque, the OTT effect leverages the natural out of plane orbital moments, facilitating field-free perpendicular magnetization switching through interface currents. Our results indicate that the emerging OTT MRAM is promising for low power, high performance memory applications.
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Submitted 2 December, 2023;
originally announced December 2023.
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Mössbauer spectroscopy study of the magnetostructural and spin-state transitions in the breathing pyrochlore LiFeCr$_{4}$O$_{8}$
Authors:
Bo Zhang,
Wei Ren,
Shengyu Yang,
Qifeng Kuang,
Da Li,
Xin Liu,
Anmin Zhang,
Hua Pang,
Liyun Tang,
Liang Qiao,
Fashen Li,
Zhiwei Li
Abstract:
We report on investigations of the complex magnetostructural and spin-state transitions in the breathing pyrochlore LiFeCr$_{4}$O$_{8}$ by means of magnetization, Mössbauer spectroscopy, and density functional theory (DFT) calculations. Three transitions corresponding to the ferrimagnetic transition at $T_N\sim94$ K, the spin-gap transition at $T_{SG}\sim50$ K, and the magnetostructural transition…
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We report on investigations of the complex magnetostructural and spin-state transitions in the breathing pyrochlore LiFeCr$_{4}$O$_{8}$ by means of magnetization, Mössbauer spectroscopy, and density functional theory (DFT) calculations. Three transitions corresponding to the ferrimagnetic transition at $T_N\sim94$ K, the spin-gap transition at $T_{SG}\sim50$ K, and the magnetostructural transition at $T_{MS}\sim19$ K were observed from the $χ$(T) curve, whereas only $T_N$ and $T_{MS}$ were evidenced for the Fe site from our Mössbauer measurements, suggesting that the spin-gap transition is absent at the Fe site. This indicates that the spin-gap transition is an effect of the breathing Cr$_4$ lattice, in agreement with our DFT calculations from which we see nearly decoupled electronic states for the FeO$_4$ and CrO$_6$ units. From the temperature dependence of the hyperfine magnetic field we also observed a spin-state transition for the Fe spins at $T_{MS}$ consistent with earlier neutron diffraction measurements. These local characteristics are believed to be important for a complete understanding of the complex magnetostructural coupling effects observed in similar systems.
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Submitted 1 December, 2023;
originally announced December 2023.
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Surface skyrmions and dual topological Hall effect in antiferromagnetic topological insulator EuCd$_2$As$_2$
Authors:
Min Wu,
R. Yang,
Xiangde Zhu,
Yixiong Ren,
Ang Qian,
Yongjie Xie,
Changming Yue,
Yong Nie,
Xiang Yuan,
Ning Wang,
Daifeng Tu,
Ding Li,
Yuyan Han,
Zhaosheng Wang,
Yaomin Dai,
Guolin Zheng,
Jianhui Zhou,
Wei Ning,
Xianggang Qiu,
Mingliang Tian
Abstract:
In this work, we synthesized single crystal of EuCd$_2$As$_2$, which exhibits A-type antiferromagnetic (AFM) order with in-plane spin orientation below $T_N$ = 9.5~K.Optical spectroscopy and transport measurements suggest its topological insulator (TI) nature with an insulating gap around 0.1eV. Remarkably, a dual topological Hall resistivity that exhibits same magnitude but opposite signs in the…
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In this work, we synthesized single crystal of EuCd$_2$As$_2$, which exhibits A-type antiferromagnetic (AFM) order with in-plane spin orientation below $T_N$ = 9.5~K.Optical spectroscopy and transport measurements suggest its topological insulator (TI) nature with an insulating gap around 0.1eV. Remarkably, a dual topological Hall resistivity that exhibits same magnitude but opposite signs in the positive to negative and negative to positive magnetic field hysteresis branches emerges below 20~K. With magnetic force microscopy (MFM) images and numerical simulations, we attribute the dual topological Hall effect to the Néel-type skyrmions stabilized by the interactions between topological surface states and magnetism, and the sign reversal in different hysteresis branches indicates potential coexistence of skyrmions and antiskyrmions. Our work uncovers a unique two-dimensional (2D) magnetism on the surface of intrinsic AFM TI, providing a promising platform for novel topological quantum states and AFM spintronic applications.
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Submitted 27 November, 2023;
originally announced November 2023.
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Quantum oscillations in kagome metals (Ti, Zr, Hf)V6Sn6 at Van Hove filling
Authors:
Miao He,
Xitong Xu,
Ding Li,
Qingqi Zeng,
Yonglai Liu,
Haitian Zhao,
Shiming Zhou,
Jianhui Zhou,
Zhe Qu
Abstract:
Kagome materials have recently drawn great attention due to the interplay between nontrivial band topology, electron correlations, and Van Hove singularities related many-body orders. Here we report three new vanadium-based kagome metals, TiV6Sn6, ZrV6Sn6, and HfV6Sn6, and conduct a comprehensive investigation of their structural, magnetic, and electrical transport properties. All three compounds…
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Kagome materials have recently drawn great attention due to the interplay between nontrivial band topology, electron correlations, and Van Hove singularities related many-body orders. Here we report three new vanadium-based kagome metals, TiV6Sn6, ZrV6Sn6, and HfV6Sn6, and conduct a comprehensive investigation of their structural, magnetic, and electrical transport properties. All three compounds exhibit large unsaturated magnetoresistances and multiband Hall effects at low temperatures, indicating the existence of multiple highly mobile carriers. Both the diagonal and off-diagonal resistivity show quantum oscillations with nontrivial Berry phases and high quantum mobilities. First-principles calculations together with quantum oscillation analyses suggest the Van Hove singularities at the M point for the three compounds all located in close vicinity of the Fermi level, and there also exist multiple topological nontrivial band crossings, including a nodal ring and a massive Dirac cone. Our work extends the kagome AM6X6 family and paves the way for searching possible Van Hove physics in the V kagome lattice.
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Submitted 4 May, 2024; v1 submitted 26 November, 2023;
originally announced November 2023.
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An evaluation strategy of the thermal conductance of semiconductor interfaces using ultraviolet light
Authors:
Dian Li,
Joseph Feser
Abstract:
In the previous studies, the ultraviolet light thermoreflectance (UV-TDTR) signal from bulk semiconducting samples cannot be well explained by a thermal models based on the assumption that the heat is both absorbed and probed near the surface. A thermoreflectance (TDTR) technique was developed to directly excite semiconductors using UV-TDTR. At λ = 400nm, the photon energy is much greater than mos…
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In the previous studies, the ultraviolet light thermoreflectance (UV-TDTR) signal from bulk semiconducting samples cannot be well explained by a thermal models based on the assumption that the heat is both absorbed and probed near the surface. A thermoreflectance (TDTR) technique was developed to directly excite semiconductors using UV-TDTR. At λ = 400nm, the photon energy is much greater than most semiconducting bandgaps, potentially allowing semiconducting transducers to absorb light within about 10 nm of the surface, potentially enabling direct measurements of semiconductor-semiconductor interfaces. The thermoreflectance coefficient for some direct-bandgap semiconducting materials was measured. Thermal transport models were fitted to thermorefectance data collected from the system. The differences in the signal for semiconductors with different do** and nanostructure features were also studied, which should change the recombination rate. No significant changes to the signal were observed.
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Submitted 18 November, 2023;
originally announced November 2023.
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A study on the thermal conductance of interface between dissimilar metals
Authors:
Dian Li,
Joseph Feser
Abstract:
Whether diffuse mismatch model for electrons (DMMe) hold true in more general cases remains largely unexplored, especially in cases where at least one material does not behave like a free-electron metal and/or the interface is smooth enough to allow non-diffuse transmission of electrons. In this study, DMMe was proposed to predict the thermal conductance of metal-metal interfaces. A set of aluminu…
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Whether diffuse mismatch model for electrons (DMMe) hold true in more general cases remains largely unexplored, especially in cases where at least one material does not behave like a free-electron metal and/or the interface is smooth enough to allow non-diffuse transmission of electrons. In this study, DMMe was proposed to predict the thermal conductance of metal-metal interfaces. A set of aluminum-X samples (X = Cu, Ag, Fe, Ni) were grown and the time domain thermoreflectance (TDTR) technique was used to measure the metal-metal interface conductance. It was then compared to the two variants of the DMMe-using both a crude theory based on free-electron metals and accurate band structures provided by density functional theory.
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Submitted 18 November, 2023;
originally announced November 2023.
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Emergent lifetime distribution from complex network systems aging
Authors:
Yimeng Liu,
Shaobo Sui,
Dan Lu,
Rui Peng,
Mingyang Bai,
Daqing Li
Abstract:
Most theoretical analysis for lifetime distribution explains origins of specific distribution based on independent failure. We develop a unified framework encompassing different lifetime distribution for failure-coupled network systems. We find three types of system lifetime distributions emerged from competence between system size N and failure coupling strength $φ$. System lifetime distribution…
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Most theoretical analysis for lifetime distribution explains origins of specific distribution based on independent failure. We develop a unified framework encompassing different lifetime distribution for failure-coupled network systems. We find three types of system lifetime distributions emerged from competence between system size N and failure coupling strength $φ$. System lifetime distribution can be describe by modified Weibull model, which degenerates into Gompertz model when N dominates and exponential distribution when $φ$ dominates. We derive asymptotic lifetime distribution. Specially, we derive a fundamental equation of thermodynamics for failure-coupled systems. Our study will help design highly reliable systems.
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Submitted 5 December, 2023; v1 submitted 13 November, 2023;
originally announced November 2023.
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Defect Regulation by Palladium Incorporation towards Grain Boundaries of Kesterite solar cells
Authors:
**lin Wang,
Jiangjian Shi,
Kang Yin,
Fanqi Meng,
Shanshan Wang,
Licheng Lou,
Jiazheng Zhou,
Xiao Xu,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Shiyou Chen,
Qingbo Meng
Abstract:
Kesterite Cu2ZnSn(S, Se)4 (CZTSSe) solar cell has emerged as one of the most promising candidates for thin-film photovoltaics. However, severe charge losses occurring at the grain boundaries (GBs) of Kesterite polycrystalline absorbers has hindered the improvement of cell performance. Herein, we report a redox reaction strategy involving palladium (Pd) to eliminate atomic vacancy defects such as V…
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Kesterite Cu2ZnSn(S, Se)4 (CZTSSe) solar cell has emerged as one of the most promising candidates for thin-film photovoltaics. However, severe charge losses occurring at the grain boundaries (GBs) of Kesterite polycrystalline absorbers has hindered the improvement of cell performance. Herein, we report a redox reaction strategy involving palladium (Pd) to eliminate atomic vacancy defects such as VSn and VSe in GBs of the Kesterite absorbers. We demonstrate that PdSex compounds could form during the selenization process and distribute at the GBs and the absorber surfaces; thereby aid in the suppression of Sn and Se volatilization loss and inhibiting the formation of VSn and VSe defects. Furthermore, Pd(II)/Pd(IV) serves as a redox shuttle, i.e., on one hand, Pd(II) captures Se vapor from the reaction environment to produce PdSe2, on the other hand, PdSe2 provides Se atoms to the Kesterite absorber by being reduced to PdSe, thus contributing to the elimination of pre-existing VSe defects within GBs. These effects collectively reduce defects and enhance the p-type characteristics of the Kesterite absorber, leading to a significant reduction in charge recombination loss within the cell. As a result, high-performance Kesterite solar cells with a total-area efficiency of 14.5% have been achieved. This remarkable efficiency increase benefited from the redox reaction strategy offers a promising avenue for the precise regulation of defects in Kesterite solar cells and holds generally significant implications for the exploration of various other photovoltaic devices.
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Submitted 7 November, 2023;
originally announced November 2023.
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Impact of the Ce $4f$ states in the electronic structure of the intermediate-valence superconductor CeIr$_3$
Authors:
Shin-ichi Fujimori,
Ikuto Kawasaki,
Yukiharu Takeda,
Hiroshi Yamagami,
Norimasa Sasabe,
Yoshiki J. Sato,
Ai Nakamura,
Yusei Shimizu,
Arvind Maurya,
Yoshiya Homma,
Dexin Li,
Fuminori Honda,
Dai Aoki
Abstract:
The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ s…
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The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ states. The contribution of the $\mathrm{Ce}~4f$ states to the density of states (DOS) at the Fermi energy was estimated to be nearly half of that of the $\mathrm{Ir}~5d$ states, implying that the $\mathrm{Ce}~4f$ states have a considerable contribution to the DOS at the Fermi energy. The $\mathrm{Ce}~3d$ core-level and $\mathrm{Ce}~3d$ X-ray absorption spectra were analyzed based on a single-impurity Anderson model. The number of the $\mathrm{Ce}~4f$ states in the ground state was estimated to be $0.8-0.9$, which is much larger than the values obtained in the previous studies (i.e., $0-0.4$).
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Submitted 6 November, 2023;
originally announced November 2023.
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Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4
Authors:
W. X. Zhao,
M. Yang,
R. Z. Xu,
X. Du,
Y. D. Li,
K. Y. Zhai,
C. Peng,
D. Pei,
H. Gao,
Y. W. Li,
L. X. Xu,
J. F. Han,
Y. Huang,
Z. K. Liu,
Y. G. Yao,
J. C. Zhuang,
Y. Du,
J. J. Zhou,
Y. L. Chen,
L. X. Yang
Abstract:
The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measureme…
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The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolutions, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is an explicit signature of the existence of hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase will lay the promising prospect of applications based on 1D spin-momentum locked current in electronic and spintronic devices.
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Submitted 6 November, 2023;
originally announced November 2023.
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Real-space Formalism for the Euler Class and Fragile Topology in Quasicrystals and Amorphous Lattices
Authors:
Dexin Li,
Citian Wang,
Huaqing Huang
Abstract:
We propose a real-space formalism of the topological Euler class, which characterizes the fragile topology of two-dimensional systems with real wave functions. This real-space description is characterized by local Euler markers whose macroscopic average coincides with the Euler number, and it applies equally well to periodic and open boundary conditions for both crystals and noncrystalline systems…
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We propose a real-space formalism of the topological Euler class, which characterizes the fragile topology of two-dimensional systems with real wave functions. This real-space description is characterized by local Euler markers whose macroscopic average coincides with the Euler number, and it applies equally well to periodic and open boundary conditions for both crystals and noncrystalline systems. We validate this by diagnosing topological phase transitions in clean and disordered crystalline systems with the reality endowed by the space-time inversion symmetry $\mathcal{I}_{ST}$. Furthermore, we demonstrated the topological Euler phases in quasicrystals and even in amorphous lattices lacking any spatial symmetries. Our work not only provides a local characterization of the fragile topology but also significantly extends its territory beyond $\mathcal{I}_{ST}$-symmetric crystalline materials.
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Submitted 2 November, 2023;
originally announced November 2023.
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Space-confined solid-phase growth of two-domain 1T'-ReSe2 for tunable optoelectronics
Authors:
Yunhao Tong,
Fanyi Kong,
Lei Zhang,
Xinyi Hou,
Zhengxian Zha,
Zheng Hao,
Jianxun Dai,
Changsen Sun,
**gfeng Song,
Huolin Huang,
Chenhua Ji,
Lujun Pan,
Dawei Li
Abstract:
Two-dimensional layered ReX2 (X = Se, S) has attracted researcher's great interest due to its unusual in-plane anisotropic optical and electrical properties and great potential in polarization-sensitive optoelectronic devices, while the clean, energy-saving, and ecological synthesis of highly-crystalline ReSe2 with controlled domains remains challenging yet promising. Here, we develop a novel spac…
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Two-dimensional layered ReX2 (X = Se, S) has attracted researcher's great interest due to its unusual in-plane anisotropic optical and electrical properties and great potential in polarization-sensitive optoelectronic devices, while the clean, energy-saving, and ecological synthesis of highly-crystalline ReSe2 with controlled domains remains challenging yet promising. Here, we develop a novel space-confined solid-phase approach for the growth of high-quality two-domain 1T'-ReSe2 with tunable optoelectronic properties by using pure Re powder film as Re precursor. The results show that ReSe2 can be grown at a temperature as low as 550 oC in a small-tube-assisted space-confined reactor, with its size and shape well-tailored via temperature control. A solid-phase two-domain ReSe2 growth mechanism is proposed, as evidenced by combining in-situ optical monitoring, ex-situ electron microscope and elemental map**, and polarized optical imaging. Moreover, we have fabricated two-domain ReSe2 transistors, which exhibit switchable transport behavior between n-type and ambipolar character via grain boundary orientation control. This modulation phenomenon is attributed to the different do** levels between the grain boundary and the single domain. Furthermore, the as-fabricated two-domain ReSe2 photodetectors exhibit a highly gate-tunable current on-off ratio (with a maximum value of ~8.2x10^3), a polarization-sensitive photo-response, and a high-speed response time (~300 us), exceeding most of the previously reported ReX2 photodetectors. Our work thus provides a new, low-consumption, energy-saving growth strategy toward high-quality, domain-controlled ReX2 for highly tunable and high-performance optoelectronics.
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Submitted 20 October, 2023;
originally announced October 2023.
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Accelerating GW calculations of point defects with the defect-patched screening approximation
Authors:
Du Li,
Zhen-Fei Liu,
Li Yang
Abstract:
The GW approximation has been widely accepted as an ab initio tool for calculating defect levels with many-electron effect included. However, the GW simulation cost increases dramatically with the system size, and, unfortunately, large supercells are often required to model low-density defects that are experimentally relevant. In this work, we propose to accelerate GW calculations of point defects…
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The GW approximation has been widely accepted as an ab initio tool for calculating defect levels with many-electron effect included. However, the GW simulation cost increases dramatically with the system size, and, unfortunately, large supercells are often required to model low-density defects that are experimentally relevant. In this work, we propose to accelerate GW calculations of point defects by reducing the simulation cost of the many-electron screening, which is the primary computational bottleneck. The random-phase approximation of many-electron screening is divided into two parts: one is the intrinsic screening, calculated using a unit cell of pristine structures, and the other is the defect-induced screening, calculated using the supercell within a small energy window. Depending on specific defects, one may only need to consider the intrinsic screening or include the defect contribution. This approach avoids the summation of many conductions states of supercells and significantly reduces the simulation time. We have applied it to calculating various point defects, including neutral and charged defects in two-dimensional and bulk systems with small or large bandgaps. The results consist with those from the direct GW simulations, and the agreements are further improved at the dilute-defect limit, which is experimentally relevant but extremely challenging for direct GW simulations. This defect-patched screening approach not only clarifies the roles of defects in many-electron screening but also paves the way to fast screen defect structures/materials for novel applications, including single-photon sources, quantum qubits, and quantum sensors.
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Submitted 2 October, 2023;
originally announced October 2023.
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Proposal for all-electrical skyrmion detection in van der Waals tunnel junctions
Authors:
Dongzhe Li,
Soumyajyoti Haldar,
Stefan Heinze
Abstract:
A major challenge for magnetic skyrmions in atomically thin van der Waals (vdW) materials is reliable skyrmion detection. Here, based on rigorous first-principles calculations, we show that all-electrical skyrmion detection is feasible in 2D vdW magnets via scanning tunneling microscopy (STM) and in planar tunnel junctions. We use the nonequilibrium Green's function method for quantum transport in…
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A major challenge for magnetic skyrmions in atomically thin van der Waals (vdW) materials is reliable skyrmion detection. Here, based on rigorous first-principles calculations, we show that all-electrical skyrmion detection is feasible in 2D vdW magnets via scanning tunneling microscopy (STM) and in planar tunnel junctions. We use the nonequilibrium Green's function method for quantum transport in planar junctions, including self-energy due to electrodes and working conditions, going beyond the standard Tersoff-Hamann approximation. We obtain a very large tunneling anisotropic magnetoresistance (TAMR) around the Fermi energy for a vdW tunnel junction based on graphite/Fe$_3$GeTe$_2$/germanene/graphite. For atomic-scale skyrmions the noncollinear magnetoresistance (NCMR) reaches giant values. We trace the origin of the NCMR to spin-mixing between spin-up and -down states of $p_z$ and $d_{z^2}$ character at the surface atoms. Both TAMR and NCMR are drastically enhanced in tunnel junctions with respect to STM geometry due to orbital symmetry matching at the interface.
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Submitted 14 February, 2024; v1 submitted 7 September, 2023;
originally announced September 2023.
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The vortex-Nernst effect in a superconducting infinite-layer nickelate
Authors:
Nicholas P. Quirk,
Danfeng Li,
Bai Yang Wang,
Harold Y. Hwang,
N. P. Ong
Abstract:
We report measurements of the Nernst and Seebeck effects in Nd$_{1-x}$Sr$_x$NiO$_2$ thin films near the superconducting transition temperature, $T$ = 6.5 - 15 K. Our main result is the observation of a vortex-Nernst signal $S_{yx}(T,H)$ with a maximum at $μ_0H$ = 5 T and a tail that extends to $μ_0H$ $\approx$ 15 T, which we identify as the upper-critical field $H_{c2}$. At $T > T_{\rm c} =$ 6.1 K…
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We report measurements of the Nernst and Seebeck effects in Nd$_{1-x}$Sr$_x$NiO$_2$ thin films near the superconducting transition temperature, $T$ = 6.5 - 15 K. Our main result is the observation of a vortex-Nernst signal $S_{yx}(T,H)$ with a maximum at $μ_0H$ = 5 T and a tail that extends to $μ_0H$ $\approx$ 15 T, which we identify as the upper-critical field $H_{c2}$. At $T > T_{\rm c} =$ 6.1 K, $H_{c2}$ remains large (15 T), up to the highest temperature we can resolve from $S_{yx}$ (11 K). These results indicate the existence of a vortex-liquid state over a wide range of finite-resistance temperatures, as in the high-$T_{\rm c}$ cuprates.
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Submitted 6 September, 2023;
originally announced September 2023.
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Switchable in-plane anomalous Hall effect by magnetization orientation in monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$
Authors:
Ding Li,
Maoyuan Wang,
Dengfeng Li,
Jianhui Zhou
Abstract:
In-plane anomalous Hall effect (IPAHE) is an unconventional anomalous Hall effect (AHE) with the Hall current flows in the plane spanned by the magnetization or magnetic field and the electric field. Here,we predict a stable two-dimensional ferromagnetic monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$ with collinear ordering of Mn moments in the basal plane. Moreover, we reveal that the…
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In-plane anomalous Hall effect (IPAHE) is an unconventional anomalous Hall effect (AHE) with the Hall current flows in the plane spanned by the magnetization or magnetic field and the electric field. Here,we predict a stable two-dimensional ferromagnetic monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$ with collinear ordering of Mn moments in the basal plane. Moreover, we reveal that the monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$ possesses a substantial periodic IPAHE due to the threefold rotational symmetry, which can be switched by changing the magnetization orientation by external magnetic fields. In addition, we briefly discuss the impacts of moderate strains on the electronic states and AHE, which lead to a near quantized Hall conductivity. Our work provides a potential platform for realizing a sizable and controllable IPAHE that greatly facilatates the application of energy-efficient spintronic devices.
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Submitted 19 April, 2024; v1 submitted 29 August, 2023;
originally announced August 2023.
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Simultaneous 3D Construction and Imaging of Plant Cells Using Plasmonic Nanoprobe Assisted Multimodal Nonlinear Optical Microscopy
Authors:
Kun Liu,
Yutian Lei,
Dawei Li
Abstract:
Nonlinear optical (NLO) imaging has emerged as a promising plant cell imaging technique due to its large optical penetration, inherent 3D spatial resolution, and reduced photodamage, meanwhile exogenous nanoprobes are usually needed for non-signal target cell analysis. Here, we report in-vivo, simultaneous 3D labeling and imaging of potato cell structures using plasmonic nanoprobe-assisted multimo…
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Nonlinear optical (NLO) imaging has emerged as a promising plant cell imaging technique due to its large optical penetration, inherent 3D spatial resolution, and reduced photodamage, meanwhile exogenous nanoprobes are usually needed for non-signal target cell analysis. Here, we report in-vivo, simultaneous 3D labeling and imaging of potato cell structures using plasmonic nanoprobe-assisted multimodal NLO microscopy. Experimental results show that the complete cell structure could be imaged by the combination of second-harmonic generation (SHG) and two-photon luminescence (TPL) when noble metal silver or gold ions are added. In contrast, without noble metal ion solution, no NLO signals from the cell wall could be acquired. The mechanism can be attributed to noble metal nanoprobes with strong nonlinear optical responses formed along the cell walls via a femtosecond laser scan. During the SHG-TPL imaging process, noble metal ions that cross the cell wall could be rapidly reduced to plasmonic nanoparticles by fs laser and selectively anchored onto both sides of the cell wall, thereby leading to simultaneous 3D labeling and imaging of potato cells. Compared with traditional labeling technique that needs in-vitro nanoprobe fabrication and cell labeling, our approach allows for one-step, in-vivo labeling of plant cells, thus providing a rapid, cost-effective way for cellular structure construction and imaging.
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Submitted 22 August, 2023;
originally announced August 2023.
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Orbital-selective charge-density wave in TaTe$_4$
Authors:
R. Z. Xu,
X. Du,
J. S. Zhou,
X. Gu,
Q. Q. Zhang,
Y. D. Li,
W. X. Zhao,
F. W. Zheng,
M. Arita,
K. Shimada,
T. K. Kim,
C. Cacho,
Y. F. Guo,
Z. K. Liu,
Y. L. Chen,
L. X. Yang
Abstract:
TaTe$_4$, a metallic charge-density wave (CDW) material discovered decades ago, has attracted renewed attention due to its rich interesting properties such as pressure-induced superconductivity and candidate non-trivial topological phase. Here, using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of TaTe…
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TaTe$_4$, a metallic charge-density wave (CDW) material discovered decades ago, has attracted renewed attention due to its rich interesting properties such as pressure-induced superconductivity and candidate non-trivial topological phase. Here, using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of TaTe$_4$. At 26 K, we observe a CDW gap as large as 290 meV, which persists up to 500 K. The CDW-modulated band structure shows a complex reconstruction that closely correlates with the lattice distortion. Inside the CDW gap, there exist highly dispersive energy bands contributing to the remnant Fermi surface and metallic behavior in the CDW state. Interestingly, our ab-initio calculation reveals that the large CDW gap mainly opens in the electronic states with out-of-plane orbital components, while the in-gap metallic states originate from in-plane orbitals, suggesting an orbital texture that couples with the CDW order. Our results shed light on the interplay between electron, lattice, and orbital in quasi-one-dimensional CDW materials.
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Submitted 16 August, 2023;
originally announced August 2023.
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Anharmonic Strong-Coupling Effects at the Origin of the Charge Density Wave in CsV$_3$Sb$_5$
Authors:
Ge He,
Leander Peis,
Emma Frances Cuddy,
Zhen Zhao,
Dong Li,
Ramona Stumberger,
Brian Moritz,
Haitao Yang,
Hong-Jun Gao,
Thomas Peter Devereaux,
Rudi Hackl
Abstract:
The formation of charge density waves (CDW) is a long-standing open problem particularly in dimensions higher than one. Various observations in the vanadium antimonides discovered recently, such as the missing Kohn anomaly in the acoustic phonons or the latent heat at the transition $T_{\rm CDW}$ = 95 K , further underpin this notion. Here, we study the Kagome metal CsV$_3$Sb$_5$ using polarized i…
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The formation of charge density waves (CDW) is a long-standing open problem particularly in dimensions higher than one. Various observations in the vanadium antimonides discovered recently, such as the missing Kohn anomaly in the acoustic phonons or the latent heat at the transition $T_{\rm CDW}$ = 95 K , further underpin this notion. Here, we study the Kagome metal CsV$_3$Sb$_5$ using polarized inelastic light scattering. The electronic energy gap $2Δ$ as derived from the redistribution of the continuum is much larger than expected from mean-field theory and reaches values above 20 for $2Δ/k_{\rm B}T_{\rm CDW}$. The A$_{1g}$ phonon has a discontinuity at $T_{\rm CDW}$ and a precursor starting 20 K above $T_{\rm CDW}$. Density functional theory qualitatively reproduces the redistribution of the electronic continuum at the CDW transition and the phonon energies of the pristine and distorted structures. The linewidths of all A$_{1g}$ and E$_{2g}$ phonon lines including those emerging below $T_{\rm CDW}$ were analyzed in terms of anharmonic symmetric decay revealing strong phonon-phonon coupling. In addition, we observe two CDW amplitude modes (AMs): one in A$_{1g}$ symmetry and one in E$_{2g}$ symmetry. The temperature dependence of both modes deviates from the prediction of mean-field theory. The A$_{1g}$ AM displays an asymmetric Fano-type lineshape, suggestive of strong electron-phonon coupling. The asymmetric A$_{1g}$ AM, along with the discontinuity of the A$_{1g}$ phonon, the large phonon-phonon coupling parameters and the large gap ratio, indicate the importance of anharmonic strong phonon-phonon and electron-phonon coupling for the CDW formation in CsV$_3$Sb$_5$.
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Submitted 14 August, 2023;
originally announced August 2023.
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Emergent electronic landscapes in a novel valence-ordered nickelate with tri-component nickel coordination
Authors:
Aravind Raji,
Zhengang Dong,
Victor Porée,
Alaska Subedi,
Xiaoyan Li,
Bernat Mundet,
Lucia Varbaro,
Claribel Domínguez,
Marios Hadjimichael,
Bohan Feng,
Alessandro Nicolaou,
Jean-Pascal Rueff,
Danfeng Li,
Alexandre Gloter
Abstract:
The metal-hydride-based topochemical reduction process has produced novel thermodynamically unstable phases across various transition metal oxide series with unusual crystal structures and non-trivial ground states. Here, by such an oxygen (de-) intercalation method we synthesis a novel samarium nickelate with ordered nickel valences associated with tri-component coordination configurations. This…
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The metal-hydride-based topochemical reduction process has produced novel thermodynamically unstable phases across various transition metal oxide series with unusual crystal structures and non-trivial ground states. Here, by such an oxygen (de-) intercalation method we synthesis a novel samarium nickelate with ordered nickel valences associated with tri-component coordination configurations. This structure, with a formula of Sm$_{9}$Ni$_{9}$O$_{22}$ as revealed by four-dimensional scanning transmission electron microscopy, emerges from the intricate planes of {303}$_{\text{pc}}$ ordered apical oxygen vacancies. X-ray spectroscopy measurements and ab-initio calculations show the coexistence of square-planar, pyramidal and octahedral Ni sites with mono-, bi- and tri-valences. It leads to an intense orbital polarization, charge-ordering, and a ground state with a strong electron localization marked by the disappearance of ligand-hole configuration at low-temperature. This new nickelate compound provides another example of previously inaccessible materials enabled by topotactic transformations and presents a unique platform where mixed Ni valence can give rise to exotic phenomena.
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Submitted 5 August, 2023;
originally announced August 2023.
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Determination of dynamical quantum phase transition for boson systems using the Loschmidt cumulants method
Authors:
Pengju Zhao,
**gxin Sun,
Shengjie **,
Zhongshu Hu,
Ding** Li,
Xiong-Jun Liu,
Xuzong Chen
Abstract:
We study the dynamical quantum phase transition(DQPT) of the Bose-Hubbard model utilizing recently developed Loschmidt cumulants method. We determine the complex Loschmidt zeros of the Loschmidt amplitude analogous to the Lee-Yang zeros of the thermal partition function. We obtain the DQPT critical points through identifying the crossing points with the imaginary axis. The critical points show hig…
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We study the dynamical quantum phase transition(DQPT) of the Bose-Hubbard model utilizing recently developed Loschmidt cumulants method. We determine the complex Loschmidt zeros of the Loschmidt amplitude analogous to the Lee-Yang zeros of the thermal partition function. We obtain the DQPT critical points through identifying the crossing points with the imaginary axis. The critical points show high accuracy when compared to those obtained using the matrix product states method. In addition, we show that how the critical points of DQPT can be determined by analyzing the energy fluctuation of the initial state, making it a valuable tool for future studies in this area. Finally, DQPT in the extended Bose-Hubbaed model is also investigated.
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Submitted 3 August, 2023; v1 submitted 1 August, 2023;
originally announced August 2023.
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Superconducting-Spin Reorientation in Spin-Triplet Multiple Superconducting Phases of UTe2
Authors:
Katsuki Kinjo,
Hiroki Fujibayashi,
Hiroki Matsumura,
Fumiya Hori,
Shunsaku Kitagawa,
Kenji Ishida,
Yo Tokunaga,
Hironori Sakai,
Shinsaku Kambe,
Ai Nakamura,
Yusei Shimizu,
Yoshiya Homma,
Dexin Li,
Fuminori Honda,
Dai Aoki
Abstract:
Superconducting (SC) state has spin and orbital degrees of freedom, and spin-triplet superconductivity shows multiple SC phases due to the presence of these degrees of freedom. However, the observation of spin-direction rotation occurring inside the SC state (SC spin rotation) has hardly been reported. UTe2, a recently discovered topological superconductor, exhibits various SC phases under pressur…
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Superconducting (SC) state has spin and orbital degrees of freedom, and spin-triplet superconductivity shows multiple SC phases due to the presence of these degrees of freedom. However, the observation of spin-direction rotation occurring inside the SC state (SC spin rotation) has hardly been reported. UTe2, a recently discovered topological superconductor, exhibits various SC phases under pressure: SC state at ambient pressure (SC1), high-temperature SC state above 0.5 GPa (SC2), and low-temperature SC state above 0.5 GPa (SC3). We performed nuclear magnetic resonance and AC susceptibility measurements on single-crystal UTe2. The b-axis spin susceptibility remains unchanged in SC2, unlike in SC1, and decreases below the SC2-SC3 transition with spin modulation. These unique properties in SC3 arise from the coexistence of two SC order parameters. Our NMR results confirm the spin-triplet superconductivity with SC spin parallel to b in SC2, and unveil the remaining of spin degrees of freedom in superconducting UTe2.
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Submitted 28 July, 2023;
originally announced July 2023.
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A method of calculating bandstructure in real-space with application to all-electron and full potential
Authors:
Dongming Li,
James Kestyn,
Eric Polizzi
Abstract:
We introduce a practical and efficient approach for calculating the all-electron full potential bandstructure in real space, employing a finite element basis. As an alternative to the k-space method, the method involves the self-consistent solution of the Kohn-Sham equation within a larger finite system that encloses the unit-cell. It is based on the fact that the net potential of the unit-cell co…
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We introduce a practical and efficient approach for calculating the all-electron full potential bandstructure in real space, employing a finite element basis. As an alternative to the k-space method, the method involves the self-consistent solution of the Kohn-Sham equation within a larger finite system that encloses the unit-cell. It is based on the fact that the net potential of the unit-cell converges at a certain radius point. Bandstructure results are then obtained by performing non-self-consistent calculations in the Brillouin zone. Numerous numerical experiments demonstrate that the obtained valence and conduction bands are in excellent agreement with the pseudopotential k-space method. Moreover, we successfully observe the band bending of core electrons.
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Submitted 22 July, 2023;
originally announced July 2023.
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Multinary Alloying Suppresses Defect Formation in Emerging Inorganic Solar Cells
Authors:
Jiangjian Shi,
**lin Wang,
Fanqi Meng,
Jiazheng Zhou,
Xiao Xu,
Kang Yin,
Licheng Lou,
Menghan Jiao,
Bowen Zhang,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Qingbo Meng
Abstract:
The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic constituent elements, high material stability, and excellent compatibility with industrial processes. However, CZTSSe solar cells still face challenges related to complex…
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The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic constituent elements, high material stability, and excellent compatibility with industrial processes. However, CZTSSe solar cells still face challenges related to complex defects and charge losses. To overcome these limitations and improve the efficiency of CZTSSe solar cells, it is crucial to experimentally identify and mitigate deep defects. In this study, we reveal that the dominant deep defect in CZTSSe materials exhibits donor characteristics. We propose that incomplete cation exchange during the multi-step crystallization reactions of CZTSSe is the kinetics mechanism responsible for the defect formation. To address this issue, we introduce an elemental synergistic alloying approach aimed at weakening the metal-chalcogen bond strength and the stability of intermediate phases. This alloying strategy has facilitated the kinetics of cation exchange, leading to a significant reduction in charge losses within the CZTSSe absorber. As a result, we have achieved a cell efficiency of over 14.5%. These results represent a significant advancement for emerging inorganic solar cells and additionally bring more opportunities for the precise identification and regulation of defects in a wider range of multinary inorganic compounds.
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Submitted 26 June, 2023;
originally announced June 2023.
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Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells
Authors:
Xiao Xu,
Jiazheng Zhou,
Kang Yin,
**lin Wang,
Licheng Lou,
Dongmei Li,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Qingbo Meng
Abstract:
Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages of environmental friendliness, low cost, and multi-scenario applications, and have drawn extensive attention in recent years. Compared with rigid devices, the lack of alkali metal elements in the flexible substrate is the main factor limiting the performance of flexible CZTSSe solar cells. This work proposes a Rb ion additive strate…
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Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages of environmental friendliness, low cost, and multi-scenario applications, and have drawn extensive attention in recent years. Compared with rigid devices, the lack of alkali metal elements in the flexible substrate is the main factor limiting the performance of flexible CZTSSe solar cells. This work proposes a Rb ion additive strategy to simultaneously regulate the CZTSSe film surface properties and the CdS chemical bath deposition (CBD) processes. Material and chemical characterization reveals that Rb ions can passivate the detrimental Se0 cluster defect and additionally provide a more active surface for the CdS epitaxial growth. Furthermore, Rb can also coordinate with thiourea (TU) in the CBD solution and improve the ion-by-ion deposition of the CdS layer. Finally, the flexible CZTSSe cell fabricated by this strategy has reached a high total-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOC and FF reaching 538 mV and 0.70, respectively. This work enriches the alkali metal passivation strategies and provides new ideas for further improving flexible CZTSSe solar cells in the future.
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Submitted 10 May, 2023;
originally announced May 2023.
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Low-temperature Magnetic Fluctuations Investigated by $^{125}$Te-NMR on the Uranium-based Superconductor UTe$_{2}$
Authors:
Hiroki Fujibayashi,
Katsuki Kinjo,
Genki Nakamine,
Shunsaku Kitagawa,
Kenji Ishida,
Yo Tokunaga,
Hironori Sakai,
Shinsaku Kambe,
Ai Nakamura,
Yusei Shimizu,
Yoshiya Homma,
Dexin Li,
Fuminori Honda,
Dai Aoki
Abstract:
To investigate the static and dynamic magnetic properties on the uranium-based superconductor UTe$_{2}$, we measured the NMR Knight shift $K$ and the nuclear spin-lattice relaxation rate $1/T_{1}$ in $H \parallel a$ by $^{125}$Te-NMR on a $^{125}$Te-enriched single-crystal sample. $1/T_1T$ in $H \parallel a$ is much smaller than $1/T_1T$ in $H \parallel b$ and $c$, and magnetic fluctuations along…
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To investigate the static and dynamic magnetic properties on the uranium-based superconductor UTe$_{2}$, we measured the NMR Knight shift $K$ and the nuclear spin-lattice relaxation rate $1/T_{1}$ in $H \parallel a$ by $^{125}$Te-NMR on a $^{125}$Te-enriched single-crystal sample. $1/T_1T$ in $H \parallel a$ is much smaller than $1/T_1T$ in $H \parallel b$ and $c$, and magnetic fluctuations along each axis are derived from the $1/T_1T$ measured in $H$ parallel to all three crystalline axes. The magnetic fluctuations are almost identical at two Te sites and isotropic at high temperatures, but become anisotropic below 40 K, where heavy-fermion state is formed. The character of magnetic fluctuations in UTe$_2$ is discussed with the comparison to its static susceptibility and the results on other U-based superconductors. It is considered that the magnetic fluctuations probed with the NMR measurements are determined by the magnetic properties inside the two-leg ladder formed by U atoms, which are dominated by the $q_a$ = 0 ferromagnetic fluctuations.
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Submitted 2 May, 2023;
originally announced May 2023.
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Large Reduction in the $a$-axis Knight Shift on UTe$_2$ with $T_{\rm c}$ = 2.1 K
Authors:
Hiroki Matsumura,
Hiroki Fujibayashi,
Katsuki Kinjo,
Shunsaku Kitagawa,
Kenji Ishida,
Yo Tokunaga,
Hironori Sakai,
Shinsaku Kambe,
Ai Nakamura,
Yusei Shimizu,
Yoshiya Homma,
Dexin Li,
Fuminori Honda,
Dai Aoki
Abstract:
Spin susceptibility in the superconducting (SC) state was measured in the higher-quality sample of uranium-based superconductor UTe$_2$ by using Knight-shift measurements for a magnetic field $H$ along all three crystalline axes. In the higher-quality sample, the SC transition temperature $T_{\rm c}$ is about 2.1 K, and the residual electronic term in the specific heat is almost zero. The NMR line…
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Spin susceptibility in the superconducting (SC) state was measured in the higher-quality sample of uranium-based superconductor UTe$_2$ by using Knight-shift measurements for a magnetic field $H$ along all three crystalline axes. In the higher-quality sample, the SC transition temperature $T_{\rm c}$ is about 2.1 K, and the residual electronic term in the specific heat is almost zero. The NMR linewidth becomes narrower and is almost half of that in the previous sample with $T_{\rm c} \sim 1.6$ K when $H \parallel a$ and $c$. Although the Knight-shift behavior was not so different from the previous results for $H \parallel b$, and $c$, a large reduction in Knight shift along the $a$ axis was observed, in contrast with the previous $a$-axis Knight shift result. We discuss the origin of the difference between the previous and present results, and the possible SC state derived from the present results.
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Submitted 2 May, 2023;
originally announced May 2023.
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Evidence for Band Renormalizations in Strong-coupling Superconducting Alkali-fulleride Films
Authors:
J. S. Zhou,
R. Z. Xu,
X. Q. Yu,
F. J. Cheng,
W. X. Zhao,
X. Du,
S. Z. Wang,
Q. Q. Zhang,
X. Gu,
S. M. He,
Y. D. Li,
M. Q. Ren,
X. C. Ma,
Q. K. Xue,
Y. L. Chen,
C. L. Song,
L. X. Yang
Abstract:
There has been a long-standing debate about the mechanism of the unusual superconductivity in alkali-intercalated fulleride superconductors. In this work, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of superconducting K3C60 thin films. We observe a dispersive energy band crossing the Fermi level with an occupied bandwidth…
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There has been a long-standing debate about the mechanism of the unusual superconductivity in alkali-intercalated fulleride superconductors. In this work, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of superconducting K3C60 thin films. We observe a dispersive energy band crossing the Fermi level with an occupied bandwidth of about 130 meV. The measured band structure shows prominent quasiparticle kinks and a replica band involving high-energy Jahn-Teller active Hg(8) phonon mode, reflecting strong electron-phonon coupling in the system. The electron-phonon coupling constant is estimated to be about 1.2, which dominates the quasiparticle mass renormalization. Moreover, we observe an isotropic nodeless superconducting gap beyond the mean-field estimation. Both the large electron-phonon coupling constant and large reduced superconducting gap suggest a strong-coupling superconductivity in K3C60, while the electronic correlation effect is indicated by the observation of a waterfall-like band dispersion and the small bandwidth compared with the effective Coulomb interaction. Our results not only directly visualize the crucial band structure of superconducting fulleride but also provide important insights into the mechanism of the unusual superconductivity.
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Submitted 26 April, 2023;
originally announced April 2023.
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Phase shift and magnetic anisotropy induced field splitting of impurity states in (Li1-xFex)OHFeSe superconductor
Authors:
Tianzhen Zhang,
Yining Hu,
Wei Su,
Chen Chen,
Xu Wang,
Dong Li,
Zouyouwei Lu,
Wentao Yang,
Qingle Zhang,
Xiaoli Dong,
Rui Wang,
Xiaoqun Wang,
Donglai Feng,
Tong Zhang
Abstract:
Revealing the energy and spatial characteristics of impurity induced states in superconductors is essential for understanding their mechanism and fabricating new quantum state by manipulating impurities. Here by using high-resolution scanning tunneling microscopy/spectroscopy, we investigated the spatial distribution and magnetic field response of the impurity states in (Li1-xFex)OHFeSe. We detect…
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Revealing the energy and spatial characteristics of impurity induced states in superconductors is essential for understanding their mechanism and fabricating new quantum state by manipulating impurities. Here by using high-resolution scanning tunneling microscopy/spectroscopy, we investigated the spatial distribution and magnetic field response of the impurity states in (Li1-xFex)OHFeSe. We detected two pairs of strong in-gap states on the "dumbbell" shaped defects. They display clear damped oscillations with different phase shifts and a direct phase-energy correlation. These features have long been predicted for classical Yu-Shiba-Rusinov (YSR) state, which are demonstrated here with unprecedented resolution for the first time. Moreover, upon applying magnetic field, all the in-gap state peaks remarkably split into two rather than shift, and the splitting strength is field orientation dependent. Via detailed numerical model calculations, we found such anisotropic splitting behavior can be naturally induced by a high-spin impurity coupled to anisotropic environment, highlighting how magnetic anisotropy affects the behavior of YSR states.
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Submitted 24 April, 2023;
originally announced April 2023.
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Charge order driven by multiple-Q spin fluctuations in heavily electron-doped iron selenide superconductors
Authors:
Ziyuan Chen,
Dong Li,
Zouyouwei Lu,
Yue Liu,
Jiakang Zhang,
Yuanji Li,
Ruotong Yin,
Mingzhe Li,
Tong Zhang,
Xiaoli Dong,
Ya-Jun Yan,
Dong-Lai Feng
Abstract:
Intertwined spin and charge orders have been widely studied in high-temperature superconductors, since their fluctuations may facilitate electron pairing; however, they are rarely identified in heavily electron-doped iron selenides. Here, using scanning tunneling microscopy, we show that when the superconductivity of (Li0.84Fe0.16OH)Fe1-xSe is suppressed by introducing Fe-site defects, a short-ran…
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Intertwined spin and charge orders have been widely studied in high-temperature superconductors, since their fluctuations may facilitate electron pairing; however, they are rarely identified in heavily electron-doped iron selenides. Here, using scanning tunneling microscopy, we show that when the superconductivity of (Li0.84Fe0.16OH)Fe1-xSe is suppressed by introducing Fe-site defects, a short-ranged checkerboard charge order emerges, propagating along the Fe-Fe directions with an approximately 2aFe period. It persists throughout the whole phase space tuned by Fe-site defect density, from a defect-pinned local pattern in optimally doped samples to an extended order in samples with lower Tc or non-superconducting. Intriguingly, our simulations indicate that the charge order is likely driven by multiple-Q spin density waves originating from the spin fluctuations observed by inelastic neutron scattering. Our study proves the presence of a competing order in heavily electron-doped iron selenides, and demonstrates the potential of charge order as a tool to detect spin fluctuations.
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Submitted 12 April, 2023;
originally announced April 2023.
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Observation of Coulomb blockade and Coulomb staircases in superconducting Pr0.8Sr0.2NiO2 films
Authors:
Rui-Feng Wang,
Yan-Ling Xiong,
Hang Yan,
Xiaopeng Hu,
Motoki Osada,
Danfeng Li,
Harold Y. Hwang,
Can-Li Song,
Xu-Cun Ma,
Qi-Kun Xue
Abstract:
Motivated by the discovery of superconductivity in the infinite-layer nickelate family, we report an experimental endeavor to clean the surface of nickelate superconductor Pr0.8Sr0.2NiO2 films by Ar+ ion sputtering and subsequent annealing, and we study their electronic structures by cryogenic scanning tunneling microscopy and spectroscopy. The annealed surfaces are characterized by nano-sized clu…
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Motivated by the discovery of superconductivity in the infinite-layer nickelate family, we report an experimental endeavor to clean the surface of nickelate superconductor Pr0.8Sr0.2NiO2 films by Ar+ ion sputtering and subsequent annealing, and we study their electronic structures by cryogenic scanning tunneling microscopy and spectroscopy. The annealed surfaces are characterized by nano-sized clusters and Coulomb staircases with periodicity inversely proportional to the projected area of the nanoclusters, consistent with a double-barrier tunneling junction model. Moreover, the dynamical Coulomb blockade effects are observed and result in well-defined energy gaps around the Fermi level, which correlate closely with the specific configuration of the junctions. These Coulomb blockade-related phenomena provide an alternative plausible cause of the observed gap structure that should be considered in the spectroscopic understanding of nickelate superconductors with the nano-clustered surface.
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Submitted 9 March, 2023;
originally announced March 2023.
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Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4
Authors:
Q. Q. Zhang,
Y. Shi,
K. Y. Zhai,
W. X. Zhao,
X. Du,
J. S. Zhou,
X. Gu,
R. Z. Xu,
Y. D. Li,
Y. F. Guo,
Z. K. Liu,
C. Chen,
S. -K. Mo,
T. K. Kim,
C. Cacho,
J. W. Yu,
W. Li,
Y. L. Chen,
Jiun-Haw Chu,
L. X. Yang
Abstract:
EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM…
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EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM). We observe a CDW gap of about 200 meV at low temperatures that persists up to 400 K, suggesting that the CDW transition occurs at a much higher temperature. We observe a large thermal hysteretic behavior of the ARPES intensity near the Fermi level, consistent with the resistivity measurement. The hysteresis in the resistivity measurement does not change under a magnetic field up to 7 T, excluding the thermal magnetic hysteresis mechanism. Instead, the surface topography measured with STM shows surface domains with different CDW trimerization directions, which may be important for the thermal hysteretic behavior of EuTe4. Interestingly, we observe a large negative magnetoresistance at low temperatures that can be associated with the canting of magnetically ordered Eu spins. Our work shed light on the understanding of magnetic, transport, and electronic properties of EuTe4.
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Submitted 5 March, 2023;
originally announced March 2023.
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Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells
Authors:
Xiao Xu,
Jiazheng Zhou,
Kang Yin,
**lin Wang,
Licheng Lou,
Menghan Jiao,
Bowen Zhang,
Dongmei Li,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Qingbo Meng
Abstract:
Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materials for its earth-abundant reserves, environmental friendliness, and high stability.The quality of CZTSSe absorber determines the power-conversion efficiency (PCE) of CZTSSe solar cells. The absorber's quality lies on post-selenization process, which is the reaction of Cu-Zn-Sn precursor and selenium vapor. And the post-seleniz…
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Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materials for its earth-abundant reserves, environmental friendliness, and high stability.The quality of CZTSSe absorber determines the power-conversion efficiency (PCE) of CZTSSe solar cells. The absorber's quality lies on post-selenization process, which is the reaction of Cu-Zn-Sn precursor and selenium vapor. And the post-selenization is dependent on various factors (e.g. temperature, precursor composition, reaction atmosphere, etc).However, synergistic regulation of these factors cannot be realized under a widely-used single-temperature zone selenization condition.Here, in our dual-temperature zone selenization scheme, a solid-liquid and solid-gas (solid precursor and liquid/gas phase Se) synergistic reaction strategy has been developed to precisely regulate the selenization. Pre-deposited excess liquid Se provides high Se chemical potential to drive a direct and fast formation of the CZTSSe phase, significantly reducing the amount of binary and ternary compounds within phase evolution. And organics removal can be accomplished via a synergistic optimization of Se condensation and subsequent volatilization. We achieve a high-performance CZTSSe solar cell with a remarkable PCE of 13.6%, and the highest large-area PCE of 12.0% (over 1cm2). Our strategy will provide a new idea for further improving efficiency of CZTSSe solar cells via phase evolution regulation, and also for other complicated multi-compound synthesis.
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Submitted 4 March, 2023;
originally announced March 2023.
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Interface-tuning of ferroelectricity and quadruple-well state in CuInP$_2$S$_6$ via ferroelectric oxide
Authors:
Kun Wang,
Du Li,
Jia Wang,
Yifei Hao,
Hailey Anderson,
Li Yang,
Xia Hong
Abstract:
Ferroelectric van der Waals CuInP$_2$S$_6$ possesses intriguing quadruple-well states and negative piezoelectricity. Its technological implementation has been impeded by the relatively low Curie temperature (bulk $T_C$ ~42 °C) and the lack of precise domain control. Here we show that CuInP$_2$S$_6$ can be immune to the finite size effect and exhibits enhanced ferroelectricity, piezoelectricity, an…
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Ferroelectric van der Waals CuInP$_2$S$_6$ possesses intriguing quadruple-well states and negative piezoelectricity. Its technological implementation has been impeded by the relatively low Curie temperature (bulk $T_C$ ~42 °C) and the lack of precise domain control. Here we show that CuInP$_2$S$_6$ can be immune to the finite size effect and exhibits enhanced ferroelectricity, piezoelectricity, and polar alignment in the ultrathin limit when interfaced with ferroelectric oxide PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films. Piezoresponse force microscopy studies reveal that the polar domains in thin CuInP$_2$S$_6$ fully conform to those of underlying PbZr$_{0.2}$Ti$_{0.8}$O$_3$, where the piezoelectric coefficient changes sign and increases sharply with reducing thickness. High temperature $in$ $situ$ domain imaging points to a significantly enhanced $T_C$ exceeding 200 °C for 13 nm CuInP$_2$S$_6$ on PbZr$_{0.2}$Ti$_{0.8}$O$_3$. Density functional theory modeling and Monte Carlo simulations show that the enhanced polar alignment and $T_C$ can be attributed to interface-mediated structure distortion in CuInP$_2$S$_6$. Our study provides an effective material strategy to engineer the polar properties of CuInP$_2$S$_6$ for flexible nanoelectronic, optoelectronic, and mechanical applications.
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Submitted 15 August, 2023; v1 submitted 2 February, 2023;
originally announced February 2023.