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Fundamental Scaling Relationships in Additive Manufacturing and their Implications for Future Manufacturing Systems
Authors:
David M. Wirth,
Chi Chung Li,
Jonathan K. Pokorski,
Hayden K. Taylor,
Maxim Shusteff
Abstract:
The field of additive manufacturing (AM) has advanced considerably over recent decades through the development of novel methods, materials, and systems. However, as the field approaches maturity, it is relevant to investigate the scaling frontiers and fundamental limits of AM in a generalized sense. Here we propose a simplified universal mathematical model that describes the essential process dyna…
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The field of additive manufacturing (AM) has advanced considerably over recent decades through the development of novel methods, materials, and systems. However, as the field approaches maturity, it is relevant to investigate the scaling frontiers and fundamental limits of AM in a generalized sense. Here we propose a simplified universal mathematical model that describes the essential process dynamics of many AM hardware platforms. We specifically examine the influence of several key parameters on total manufacturing time, comparing these with performance results obtained from real-world AM systems. We find a inverse-cubic dependency on minimal feature size and a linear dependency on overall structure size. These relationships imply how certain process features such as parallelization and process dimensionality can help move toward the fundamental limits. AM methods that are capable of varying the size of deposited voxels provide one possibility to overcome these limits in the future development of AM. We also propose a new framework for classifying manufacturing processes as "top-down" vs "bottom-up" paradigms, which differs from the conventional usage of such terms, and present considerations for how "bottom-up" manufacturing approaches may surpass the fundamental limits of "top-down" systems.
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Submitted 26 July, 2023;
originally announced July 2023.
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CuBr2-A New Multiferroic Material with High Critical Temperature
Authors:
L. Zhao,
T. L. Hung,
C. C. Li,
Y. Y. Chen,
M. K. Wu,
R. K. Kremer,
M. G. Banks,
A. Simon,
M. H. Whangbo,
C. Lee,
J. S. Kim,
I. Kim,
K. H. Kim
Abstract:
A new multiferroic material, CuBr2, is reported for the first time. CuBr2 has not only a high transition temperature (close to liquid nitrogen temperature) but also low dielectric loss and strong magnetoelectric coupling. These findings reveal the importance of anion effects in the search for the high temperature multiferroics materials among these low-dimensional spin systems.
A new multiferroic material, CuBr2, is reported for the first time. CuBr2 has not only a high transition temperature (close to liquid nitrogen temperature) but also low dielectric loss and strong magnetoelectric coupling. These findings reveal the importance of anion effects in the search for the high temperature multiferroics materials among these low-dimensional spin systems.
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Submitted 23 May, 2012;
originally announced May 2012.
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Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
Authors:
Jongsoo Yoon,
C. C. Li,
D. Shahar,
D. C. Tsui,
M. Shayegan
Abstract:
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density.
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density.
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Submitted 9 July, 1999; v1 submitted 8 July, 1999;
originally announced July 1999.
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From the magnetic-field-driven transitions to the zero-field transition in two-dimensions
Authors:
Y. Hanein,
D. Shahar,
Hadas Shtrikman,
J. Yoon,
C. C. Li,
D. C. Tsui
Abstract:
For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the insulating phase turns into a quantum-Hall state. While this transition was in accordance with existing theoretical models (KLZ), the density driven metal-insu…
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For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the insulating phase turns into a quantum-Hall state. While this transition was in accordance with existing theoretical models (KLZ), the density driven metal-insulator transition at zero magnetic-field, recently observed in high-quality two-dimensional systems, was unforeseen and, despite considerable amount of effort, its origins are still unknown. In order to improve our understanding of the zero magnetic-field transition, we conducted a study of the insulator to quantum-Hall transition in low-density, two-dimensional, hole system in GaAs that exhibits the zero magnetic-field metal-insulator transition. We found that, in the low field insulating phase, upon increasing the carrier density towards the metal-insulator transition, the critical magnetic-field of the insulator to quantum-Hall transition decreases and converges to the zero magnetic-field metal-insulator transition. This implies a common origin for both the finite magnetic-field and the zero magnetic-field transitions.
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Submitted 19 January, 1999;
originally announced January 1999.
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Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs
Authors:
Y. Hanein,
D. Shahar,
J. Yoon,
C. C. Li,
D. C. Tsui,
Hadas Shtrikman
Abstract:
The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.
The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.
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Submitted 24 August, 1998;
originally announced August 1998.
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Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0
Authors:
Jongsoo Yoon,
C. C. Li,
D. Shahar,
D. C. Tsui,
M. Shayegan
Abstract:
We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9 cm^{-2}<p<3.72\times 10^{10}cm^{-2}$ in the temperature range of $50mK<T<1.3K$. From their T, p, and electric field dependences, we find that the metal-insulator t…
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We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9 cm^{-2}<p<3.72\times 10^{10}cm^{-2}$ in the temperature range of $50mK<T<1.3K$. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at $r_s=35.1\pm0.9$, which is in good agreement with the critical $r_s$ for Wigner crystallization ${r_s}^c=37\pm 5$, predicted by Tanatar and Ceperley for an ideally clean 2D system.
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Submitted 22 July, 1998; v1 submitted 15 July, 1998;
originally announced July 1998.
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Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems
Authors:
Y. Hanein,
D. Shahar,
J. Yoon,
C. C. Li,
D. C. Tsui,
Hadas Shtrikman
Abstract:
The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The hi…
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The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The high-density linear conductivity extrapolates to zero at a density close to the critical density.
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Submitted 17 July, 1998; v1 submitted 10 May, 1998;
originally announced May 1998.
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The Metallic-Like Conductivity of a Two-Dimensional Hole System
Authors:
Y. Hanein,
U. Meirav,
D. Shahar,
C. C. Li,
D. C. Tsui,
Hadas Shtrikman
Abstract:
We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at low-density, to a metallic-like behavior at high-density, where the metallic behavior is characterized by a large drop in the resistivity as the temperature is lo…
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We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at low-density, to a metallic-like behavior at high-density, where the metallic behavior is characterized by a large drop in the resistivity as the temperature is lowered. These results are in agreement with recent experiments on Si-based two-dimensional systems by Kravchenko et al. and others. We show that, in the metallic region, the resistivity is dominated by an exponential temperature-dependence with a characteristic temperature which is proportional to the hole density, and appear to reach a constant value at lower temperatures.
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Submitted 18 September, 1997; v1 submitted 16 September, 1997;
originally announced September 1997.
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A New Transport Regime in the Quantum Hall Effect
Authors:
D. Shahar,
M. Hilke,
C. C. Li,
D. C. Tsui,
S. L. Sondhi,
M. Razeghi
Abstract:
This paper describes an experimental identification and characterization of a new low temperature transport regime near the quantum Hall-to-insulator transition. In this regime, a wide range of transport data are compactly described by a simple phenomenological form which, on the one hand, is inconsistent with either quantum Hall or insulating behavior and, on the other hand, is also clearly at…
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This paper describes an experimental identification and characterization of a new low temperature transport regime near the quantum Hall-to-insulator transition. In this regime, a wide range of transport data are compactly described by a simple phenomenological form which, on the one hand, is inconsistent with either quantum Hall or insulating behavior and, on the other hand, is also clearly at odds with a quantum-critical, or scaling, description. We are unable to determine whether this new regime represents a clearly defined state or is a consequence of finite temperature and sample-size measurements.
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Submitted 5 June, 1997;
originally announced June 1997.
