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The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
K. J. Thomas,
F. Sfigakis,
P. See,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantiz…
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We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one dimensional channel (estimated using a saddle point model), and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different length. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.
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Submitted 6 November, 2015; v1 submitted 12 August, 2015;
originally announced August 2015.
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Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
F. Sfigakis,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
A. R. Hamilton,
M. J. Kelly,
C. G. Smith
Abstract:
Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that…
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Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B.
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Submitted 1 June, 2015; v1 submitted 4 March, 2015;
originally announced March 2015.
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Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly
Authors:
L. W. Smith,
H. Al-Taie,
F. Sfigakis,
P. See,
A. A. J. Lesage,
B. Xu,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum…
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The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the `0.7 structure' (or `0.7 anomaly'). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from $0.63$ to $0.84\times (2e^2/h)$], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices.
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Submitted 28 July, 2014;
originally announced July 2014.