Showing 1–45 of 45 results for author: Lee, Y H

Square Moiré Superlattices in Twisted Two-Dimensional Halide Perovskites

Authors: Shuchen Zhang, Linrui **, Yuan Lu, Linghai Zhang, Jiaqi Yang, Qiuchen Zhao, Dewei Sun, Joshua J. P. Thompson, Biao Yuan, Ke Ma, Akriti, Jee Yung Park, Yoon Ho Lee, Zitang Wei, Blake P. Finkenauer, Daria D. Blach, Sarath Kumar, Hailin Peng, Arun Mannodi-Kanakkithodi, Yi Yu, Ermin Malic, Gang Lu, Letian Dou, Libai Huang

Abstract: Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional (2D) materials. Here we introduce moiré superlattices leveraging ultra-thin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly v… ▽ More Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional (2D) materials. Here we introduce moiré superlattices leveraging ultra-thin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly visualized through high-resolution transmission electron microscopy. Twist-angle-dependent transient photoluminescence microscopy and electrical characterizations indicate the emergence of localized bright excitons and trapped charge carriers near a twist angle of ~10°. The localized excitons are accompanied by enhanced exciton emission, attributed to an increased oscillator strength by a theoretically forecasted flat band. This work illustrates the potential of extended ionic interaction in realizing moiré physics at room temperature, broadening the horizon for future investigations. △ Less

Submitted 27 December, 2023; originally announced December 2023.

Modulating Resonant Electronic Coupling of Tungsten Diselenide Monolayers with Vanadyl Phthalocyanine for Spin-Valley Polarization Control

Authors: Daphné Lubert-Perquel, Jeffrey L. Blackburn, Byeong Wook Cho, Young Hee Lee, Justin C. Johnson

Abstract: Combining the synthetic tunability of molecular compounds with the optical selection rules of transition metal dichalcogenides (TMDC) that derive from spin-valley coupling could provide interesting opportunities for the readout of quantum information. However, little is known about the electronic and spin interactions at such interfaces and the influence on spin-valley relaxation. In this work we… ▽ More Combining the synthetic tunability of molecular compounds with the optical selection rules of transition metal dichalcogenides (TMDC) that derive from spin-valley coupling could provide interesting opportunities for the readout of quantum information. However, little is known about the electronic and spin interactions at such interfaces and the influence on spin-valley relaxation. In this work we investigate various heterojunctions of vanadyl phthalocyanine (VOPc) thermally evaporated on WSe$_2$ and find that local ordering of the molecular layer plays an important role in the electronic perturbation of WSe$_2$, which in turn directly influences the spin-valley polarization lifetime. A thin molecular layer results in a hybrid state which destroys the spin-valley polarization almost instantaneously, whereas a thicker molecular layer with well-defined local ordering shows minimal electronic perturbation and results in longer-lived spin-valley polarization than the WSe$_2$ monolayer alone. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Organic molecules as origin of visible-range single photon emission from hexagonal boron nitride and mica

Authors: Michael Neumann, Xu Wei, Luis Morales-Inostroza, Seunghyun Song, Sung-Gyu Lee, Kenji Watanabe, Takashi Taniguchi, Stephan Götzinger, Young Hee Lee

Abstract: The discovery of room-temperature single-photon emitters (SPEs) hosted by two-dimensional hexagonal boron nitride (2D hBN) has sparked intense research interest. Although emitters in the vicinity of 2 eV have been studied extensively, their microscopic identity has remained elusive. The discussion of this class of SPEs has centered on point defects in the hBN crystal lattice, but none of the candi… ▽ More The discovery of room-temperature single-photon emitters (SPEs) hosted by two-dimensional hexagonal boron nitride (2D hBN) has sparked intense research interest. Although emitters in the vicinity of 2 eV have been studied extensively, their microscopic identity has remained elusive. The discussion of this class of SPEs has centered on point defects in the hBN crystal lattice, but none of the candidate defect structures have been able to capture the great heterogeneity in emitter properties that is observed experimentally. Employing a widely used sample preparation protocol but disentangling several confounding factors, we demonstrate conclusively that heterogeneous single-photon emission ~2 eV associated with hBN originates from organic molecules, presumably aromatic fluorophores. The appearance of those SPEs depends critically on the presence of organic processing residues during sample preparation, and emitters formed during heat treatment are not located within the hBN crystal as previously thought, but at the hBN/substrate interface. We further demonstrate that the same class of SPEs can be observed in a different 2D insulator, fluorophlogopite mica. △ Less

Submitted 21 June, 2023; originally announced June 2023.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in ACS Nano, copyright © 2023 American Chemical Society after peer review. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsnano.3c02348

Incommensurate antiferromagnetic order in weakly frustrated two-dimensional van der Waals insulator CrPSe$_3$

Authors: Baithi Mallesh, Ngoc Toan Dang, Tuan Anh Tran, Dinh Hoa Luong, Krishna P. Dhakal, Duhee Yoon, Anton V. Rutkauskas, Sergei E. Kichanov, Ivan Y. Zel, Jeongyoung Kim, Denis P. Kozlenko, Young Hee Lee, Dinh Loc Duong

Abstract: Although the magnetic order is suppressed by a strong magnetic frustration, it is maintained but appears in complex order forms such as a cycloid or spin density wave in weakly frustrated systems. Herein, we report a weakly magnetic-frustrated two-dimensional van der Waals material CrPSe$_3$. Polycrystalline CrPSe$_3$ was synthesized at an optimized temperature of 700$^\circ$C to avoid the formati… ▽ More Although the magnetic order is suppressed by a strong magnetic frustration, it is maintained but appears in complex order forms such as a cycloid or spin density wave in weakly frustrated systems. Herein, we report a weakly magnetic-frustrated two-dimensional van der Waals material CrPSe$_3$. Polycrystalline CrPSe$_3$ was synthesized at an optimized temperature of 700$^\circ$C to avoid the formation of any secondary phases (e.g., Cr$_2$Se$_3$). The antiferromagnetic transition appeared at $T_N\sim 126$ K with a large Curie-Weiss temperature $T_{\rm CW} \sim -371$ via magnetic susceptibility measurements, indicating weak frustration in CrPSe$_3$ with a frustration factor $f (|T_{\rm CW}|/T_N) \sim 3$. Evidently, the formation of long-range incommensurate spin-density wave antiferromagnetic order with the propagation vector $k = (0, 0.04, 0)$ was revealed by neutron diffraction measurements at low temperatures (below 120K). The monoclinic crystal structure of C2/m symmetry is preserved over the studied temperature range down to 20K, as confirmed by Raman spectroscopy measurements. Our findings on the spin density wave antiferromagnetic order in two-dimensional (2D) magnetic materials, not previously observed in the MPX$_3$ family, are expected to enrich the physics of magnetism at the 2D limit, thereby opening opportunities for their practical applications in spintronics and quantum devices. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Comments: 23 pages, 4 figures, 2 tables

Spectral signatures of a unique charge density wave in Ta$_2$NiSe$_7$

Authors: Matthew D. Watson, Alex Louat, Cephise Cacho, Sungkyun Choi, Young Hee Lee, Michael Neumann, Gideok Kim

Abstract: Charge Density Waves (CDW) are commonly associated with the presence of near-Fermi level states which are separated from others, or "nested", by a wavector of $\mathbf{q}$. Here we use Angle-Resolved Photo Emission Spectroscopy (ARPES) on the CDW material Ta$_2$NiSe$_7$ and identify a total absence of any plausible nesting of states at the primary CDW wavevector $\mathbf{q}$. Nevertheless we obser… ▽ More Charge Density Waves (CDW) are commonly associated with the presence of near-Fermi level states which are separated from others, or "nested", by a wavector of $\mathbf{q}$. Here we use Angle-Resolved Photo Emission Spectroscopy (ARPES) on the CDW material Ta$_2$NiSe$_7$ and identify a total absence of any plausible nesting of states at the primary CDW wavevector $\mathbf{q}$. Nevertheless we observe spectral intensity on replicas of the hole-like valence bands, shifted by a wavevector of $\mathbf{q}$, which appears with the CDW transition. In contrast, we find that there is a possible nesting at $\mathbf{2q}$, and associate the characters of these bands with the reported atomic modulations at $\mathbf{2q}$. Our comprehensive electronic structure perspective shows that the CDW-like transition of Ta$_2$NiSe$_7$ is unique, with the primary wavevector $\mathbf{q}$ being unrelated to any low-energy states, but suggests that the reported modulation at $\mathbf{2q}$, which would plausibly connect low-energy states, might be more important for the overall energetics of the problem. △ Less

Submitted 9 June, 2023; v1 submitted 2 October, 2022; originally announced October 2022.

Journal ref: Nat Commun 14, 3388 (2023).

Quantum electron liquid and its possible phase transition

Authors: Sunghun Kim, Joonho Bang, Chan-young Lim, Seung Yong Lee, Jounghoon Hyun, Gyubin Lee, Yeonghoon Lee, Jonathan D. Denlinger, Soonsang Huh, Changyoung Kim, Sang Yong Song, Junpil Seo, Dinesh Thapa, Seong-Gon Kim, Young Hee Lee, Yeongkwan Kim, Sung Wng Kim

Abstract: Purely quantum electron systems exhibit intriguing correlated electronic phases by virtue of quantum fluctuations in addition to electron-electron interactions. To realize such quantum electron systems, a key ingredient is dense electrons decoupled from other degrees of freedom. Here, we report the discovery of a pure quantum electron liquid, which spreads up to ~ 3 Å in the vacuum on the surface… ▽ More Purely quantum electron systems exhibit intriguing correlated electronic phases by virtue of quantum fluctuations in addition to electron-electron interactions. To realize such quantum electron systems, a key ingredient is dense electrons decoupled from other degrees of freedom. Here, we report the discovery of a pure quantum electron liquid, which spreads up to ~ 3 Å in the vacuum on the surface of electride crystal. An extremely high electron density and its weak hybridisation with buried atomic orbitals evidence the quantum and pure nature of electrons, that exhibit a polarized liquid phase as demonstrated by our spin-dependent measurement. Further, upon enhancing the electron correlation strength, the dynamics of quantum electrons changes to that of non-Fermi liquid along with an anomalous band deformation, suggestive of a transition to a hexatic liquid crystal phase. Our findings cultivate the frontier of quantum electron systems, and serve as a platform for exploring correlated electronic phases in a pure fashion. △ Less

Submitted 30 September, 2022; originally announced September 2022.

Comments: 29 pages, 4 figures, 10 extended data figures

Journal ref: Nature Material (2022)

Observation of strange metal in hole-doped valley-spin insulator

Authors: Tuan Dung Nguyen, Baithi Mallesh, Seon Je Kim, Houcine Bouzid, Byeongwook Cho, Xuan Phu Le, Tien Dat Ngo, Won Jong Yoo, Young-Min Kim, Dinh Loc Duong, Young Hee Lee

Abstract: Temperature-linear resistance at low temperatures in strange metals is an exotic characteristic of strong correlation systems, as observed in high-TC superconducting cuprates, heavy fermions, Fe-based superconductors, ruthenates, and twisted bilayer graphene. Here, we introduce a hole-doped valley-spin insulator, V-doped WSe2, with hole pockets in the valence band. The strange metal characteristic… ▽ More Temperature-linear resistance at low temperatures in strange metals is an exotic characteristic of strong correlation systems, as observed in high-TC superconducting cuprates, heavy fermions, Fe-based superconductors, ruthenates, and twisted bilayer graphene. Here, we introduce a hole-doped valley-spin insulator, V-doped WSe2, with hole pockets in the valence band. The strange metal characteristic was observed in VxW1-xSe2 at a critical carrier concentration of 9.5 x 10^20 cm-3 from 150 K to 1.8 K. The unsaturated magnetoresistance is almost linearly proportional to the magnetic field. Using the ansatz R(H,T) - R(0,0) ~ [(alpha.k.T)^2+(gamma.mu.B)^2]^1/2, the gamma/alpha ratio is estimated approximately to 4, distinct from that for the quasiparticles of LSCO, BaFe2(As1-xPx)2 (gamma/alpha=1) and bosons of YBCO (gamma/alpha=2). Our observation opens up the possible routes that induce strong correlation and superconductivity in two-dimensional materials with strong spin-orbit coupling. △ Less

Submitted 8 September, 2022; originally announced September 2022.

Comments: 8 pages, 4 figures + Supplemental Material

Pressure-dependent structure of BaZrO$_3$ crystals as determined by Raman Spectroscopy

Authors: Dong-Hyeon Gim, Yeahan Sur, Yoon Han Lee, Jeong Hyuk Lee, Soonjae Moon, Yoon Seok Oh, Kee Hoon Kim

Abstract: The structure of dielectric perovskite BaZrO$_3$, long known to be cubic at room temperature without any structural phase transition with variation of temperature, has been recently disputed to have different ground state structures with lower symmetries involving octahedra rotation. The pressure-dependent Raman scattering measurements can identify the hierarchy of energetically-adjacent polymorph… ▽ More The structure of dielectric perovskite BaZrO$_3$, long known to be cubic at room temperature without any structural phase transition with variation of temperature, has been recently disputed to have different ground state structures with lower symmetries involving octahedra rotation. The pressure-dependent Raman scattering measurements can identify the hierarchy of energetically-adjacent polymorphs, hel** in turn understand its ground state structure at atmospheric pressure. Here, Raman scattering spectra of high-quality BaZrO$_3$ single crystals grown by the optical floating zone method are investigated in a pressure range from 1 atm to 42 GPa. First, based on the analyses of the infrared and Raman spectra measured at the atmosphere, it is found that all observed vibrational modes can be assigned according to the cubic $Pm\bar{3}m$ structure. In addition, by applying pressure, two structural phase transitions are found at 8.4 and 19.2 GPa, one from the cubic to the rhombohedral $R\bar{3}c$ phase and the other from the rhombohedral to the tetragonal $I4/mcm$ phase. Based on the two pressure-induced structural phase transitions, the true ground state structure of BaZrO$_3$ at room temperature and ambient pressure is corroborated to be cubic while the rhombohedral phase is the closest second. △ Less

Submitted 28 June, 2022; originally announced June 2022.

Journal ref: Materials 2022, 15, 4286

Predicting spin orbit coupling effect in the electronic and magnetic properties of cobalt (Co) doped WSe2 monolayer

Authors: Dinesh Thapa, Dinh Loc Duong, Seok Joon Yun, Santosh KC, Young Hee Lee, Seong-Gon Kim

Abstract: The electronic and magnetic properties of cobalt (Co) doped monolayer (ML) tungsten diselenide (WSe2) are investigated using the density functional theory with the on-site Hubbard potential correction (DFT+U) for the localized d orbitals of Co atom taking into account the spin orbit coupling (SOC) interaction. The results show that the substitution of Co at the W sites of ML WSe2 is energetically… ▽ More The electronic and magnetic properties of cobalt (Co) doped monolayer (ML) tungsten diselenide (WSe2) are investigated using the density functional theory with the on-site Hubbard potential correction (DFT+U) for the localized d orbitals of Co atom taking into account the spin orbit coupling (SOC) interaction. The results show that the substitution of Co at the W sites of ML WSe2 is energetically favorable under Se rich environment. We noticed that the Hund's exchange splitting (ΔH_{ex}) is dominant over the crystal field splitting (Δ_{cf}). The induced magnetic moment due to the Co-doped defect is ~3.00 μ_B per Co atom. The magnetic interaction between two Co atoms at the nearest neighbor separation depends mainly on the concentration of the impurity atoms. The calculated value of curie temperature (TC) is increasing with increasing impurity concentration satisfying the Zener model. Based on the results, it can be proposed that the Co-doped WSe2 monolayer is potential candidate to apply in spintronics, optoelectronics, and magnetic storage devices. △ Less

Submitted 3 November, 2021; v1 submitted 27 October, 2021; originally announced October 2021.

Color of Copper/Copper oxide

Authors: Su Jae Kim, Seonghoon Kim, Jegon Lee, Youngjae Jo, Yu-Seong Seo, Myounghoon Lee, Yousil Lee, Chae Ryong Cho, Jong-pil Kim, Miyeon Cheon, Jungseek Hwang, Yong In Kim, Young-Hoon Kim, Young-Min Kim, Aloysius Soon, Myunghwan Choi, Woo Seok Choi, Se-Young Jeong, Young Hee Lee

Abstract: Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer t… ▽ More Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer thickness. Grain boundary-free and atomically flat films prepared by atomic-sputtering epitaxy allow tailoring of the oxide layer with an abrupt interface via heat treatment with a suppressed temperature gradient. Color tuning of nearly full-color RGB indices is realized by precise control of oxide-layer thickness; our samples covered ~50.4% of the sRGB color space. The color of copper/copper oxide is realized by the reconstruction of the quantitative yield color from oxide pigment (complex dielectric functions of Cu2O) and light-layer interference (reflectance spectra obtained from the Fresnel equations) to produce structural color. We further demonstrate laser-oxide lithography with micron-scale linewidth and depth through local phase transformation to oxides embedded in the metal, providing spacing necessary for semiconducting transport and optoelectronics functionality. △ Less

Submitted 15 July, 2021; originally announced July 2021.

Comments: 38 pages

Journal ref: Advanced Materials 33 (2021) 2007345

Sub-bandgap activated charges transfer in a graphene-MoS2-graphene heterostructure

Authors: Sunil Kumar, Arvind Singh, Anand Nivedan, Sandeep Kumar, Seok Joon Yun, Young Hee Lee, Marc Tondusson, Jérôme Degert, Jean Oberle, Eric Freysz

Abstract: Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon energies below its bandgap, no photocarriers are generated and a monolayer of MoS2 is not of much use in either photovoltaics or photodetection. Here, we demonst… ▽ More Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon energies below its bandgap, no photocarriers are generated and a monolayer of MoS2 is not of much use in either photovoltaics or photodetection. Here, we demonstrate that large size MoS2 monolayer sandwiched between two graphene layers makes this heterostructure optically active well below the band gap of MoS2. An ultrafast optical pump-THz probe experiment reveals in real-time, transfer of carriers between graphene and MoS2 monolayer upon photoexcitation with photon energies down to 0.5 eV. It also helps to unravel an unprecedented enhancement in the broadband transient THz response of this tri-layer material system. We propose possible mechanism which can account for this phenomenon. Such specially designed heterostructures, which can be easily built around different transition metal dichalcogenide monolayers, will considerably broaden the scope for modern optoelectronic applications at THz bandwidth. △ Less

Submitted 20 March, 2021; originally announced March 2021.

Comments: Manuscript with supplementary information

Journal ref: Nano Select (2021)

Evidence of shallow bandgap in ultra-thin 1T'-MoTe2 via infrared spectroscopy

Authors: ** Cheol Park, Eilho Jung, Sangyun Lee, Jungseek Hwang, Young Hee Lee

Abstract: Although van der Waals (vdW) layered MoS2 shows the phase transformation from the semiconducting 2H-phase to the metallic 1T-phase through chemical lithium intercalation, vdW MoTe2 is thermodynamically reversible between the 2H- and 1T'-phases, and can be further transformed by energetics, laser irradiation, strain or pressure, and electrical do**. Here, thickness- and temperature-dependent opti… ▽ More Although van der Waals (vdW) layered MoS2 shows the phase transformation from the semiconducting 2H-phase to the metallic 1T-phase through chemical lithium intercalation, vdW MoTe2 is thermodynamically reversible between the 2H- and 1T'-phases, and can be further transformed by energetics, laser irradiation, strain or pressure, and electrical do**. Here, thickness- and temperature-dependent optical properties of 1T'-MoTe2 thin films grown by chemical vapor depsition are investigated via Fourier-transformed infrared spectroscopy. An optical gap of 28 +/- 2 meV in a 3-layer (or 2 nm) thick 1T'-MoTe2 is clearly observed at a low temperature region below 50K. No discernible optical bandgap is observed in samples thicker than ~4 nm. The observed thickness-dependent bandgap results agree with the measured dc resistivity data; the thickness-dependent 1T'-MoTe2 clearly demonstrates the metal-semiconductor transition at a crossover below the 2 nm-thick sample. △ Less

Submitted 25 January, 2021; originally announced January 2021.

Comments: 18 pages, 4 figures

Journal ref: Physical Review B 101, 235434 (2020)

Two-dimensional Cold Electron Transport for Steep-slope Transistors

Authors: Maomao Liu, Hemendra Nath Jaiswal, Simran Shahi, Sichen Wei, Yu Fu, Chaoran Chang, Anindita Chakravarty, Xiaochi Liu, Cheng Yang, Yanpeng Liu, Young Hee Lee, Fei Yao, Huamin Li

Abstract: Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D fiel… ▽ More Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D field-effect transistors (FETs). Here, we investigated a novel graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic cooling effect with the effective electron temperature of ~145 K in the monolayer MoS2, which enable the transport factor lowering and thus the steep-slope switching (across for 3 decades with a minimum SS of 29 mV/decade at room temperature) for a monolayer MoS2 FET. Especially, a record-high sub-60-mV/decade current density (over 1 μA/μm) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the great potential of 2D Dirac-source cold electron transistor as an innovative steep-slope transistor concept, and provides new opportunities for 2D materials toward future energy-efficient nanoelectronics. △ Less

Submitted 27 December, 2020; originally announced December 2020.

Comments: currently under review

Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2

Authors: Jun Suk Kim, Minh Dao Tran, Sung-Tae Kim, Daehan Yoo, Sang-Hyun Oh, Ji-Hee Kim, Young Hee Lee

Abstract: Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg,interpretation of the CM effect from the optical approach remains unresolved owing to the complexity of many-body electron-hole pairs. We demonstrate the CM effect through simple photocurre… ▽ More Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg,interpretation of the CM effect from the optical approach remains unresolved owing to the complexity of many-body electron-hole pairs. We demonstrate the CM effect through simple photocurrent measurements by fabricating the dual-gate P-N junction of a MoTe2 film on a transparent substrate. Electrons and holes were efficiently extracted by eliminating the Schottky barriers in the metal contact and minimizing multiple reflections. The photocurrent was elevated proportionately to the excitation energy. The boosted quantum efficiency confirms the multiple electron-hole pair generation of >2Eg, consistent with CM results from an optical approach, pushing the solar cell efficiency beyond the Shockley-Queisser limit. △ Less

Submitted 26 October, 2020; originally announced October 2020.

Journal ref: Nano Letters 21, 1976 (2021)

Bandgap renormalization in monolayer MoS_2 on CsPbBr_3 quantum dot via charge transfer at room temperature

Authors: Subash Adhikari, Ji-Hee Kim, Bumsub Song, Manh-Ha Doan, Minh Dao Tran, Leyre Gomez, Hyun Kim, Hamza Zad Gul, Ganesh Ghimire, Seok Joon Yun, Tom Gregorkiewicz, Young Hee Lee

Abstract: Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, we present the augmen… ▽ More Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, we present the augmented bandgap renormalization in monolayer MoS_2 anchored on CsPbBr_3 perovskite quantum dots at room temperature via charge transfer. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS_2. The bandgap in heterostructure is red-shifted by 84 meV with minimal pump fluence, the highest bandgap renormalization in monolayer MoS_2 at room temperature, which saturates with further increase of pump fluence. We further find that the magnitude of bandgap renormalization inversely relates to Thomas-Fermi screening length. This provides plenty of room to explore the bandgap renormalization within existing vast libraries of large bandgap van der Waals heterostructure towards practical devices such as solar cells, photodetectors and light-emitting-diodes. △ Less

Submitted 26 October, 2020; originally announced October 2020.

Substitutional VSn nanodispersed in MoS$_2$ film for Pt-scalable catalyst

Authors: Frederick Osei-Tutu Agyapong-Fordjour, Seok Joon Yun, Hyung-** Kim, Wooseon Choi, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young-Min Kim, Young Hee Lee, Young-Kyu Han, Ki Kang Kim

Abstract: Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient c… ▽ More Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient catalyst. During synthesis, vanadium atoms are substituted into hexagonal monolayer MoS2 to form randomly distributed VSn units. The V-MoS2 film on a Cu electrode exhibits Pt-scalable catalytic performance; current density of 1000 mA cm-2 at 0.6 V, overpotential of -0.06 V at a current density of 10 mA cm-2 and exchange current density of 0.65 mA cm-2 at 0 V with excellent cycle stability for hydrogen-evolution-reaction (HER). The high intrinsic HER performance of V-MoS2 is explained by the efficient electron transfer from the Cu electrode to chalcogen vacancies near vanadium sites with optimal Gibbs free energy (-0.02 eV). This study adds insight into ways to engineer TMdCs at the atomic-level to boost intrinsic catalytic activity for hydrogen evolution. △ Less

Submitted 21 October, 2020; originally announced October 2020.

Comments: 17 pages, 3 figures and a table

Epitaxial single-crystal growth of transition metal dichalcogenide monolayers via atomic sawtooth Au surface

Authors: Soo Ho Choi, Hyung-** Kim, Bumsub Song, Yong In Kim, Gyeongtak Han, Hayoung Ko, Stephen Boandoh, Ji Hoon Choi, Chang Seok Oh, Jeong Won **, Seok Joon Yun, Bong Gyu Shin, Hu Young Jeong, Young-Min Kim, Young-Kyu Han, Young Hee Lee, Soo Min Kim, Ki Kang Kim

Abstract: Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report th… ▽ More Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report the SC growth of TMdC monolayers in a centimeter scale via atomic sawtooth gold surface as a universal growth template. Atomic tooth-gullet surface is constructed by the one-step solidification of liquid gold, evidenced by transmission-electron-microscopy. Anisotropic adsorption energy of TMdC cluster, confirmed by density-functional calculations, prevails at the periodic atomic-step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of Miller indices. Growth using atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS2, WSe2, MoS2, MoSe2/WSe2 heterostructure, and W1-xMoxS2 alloy. Our strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures in a wafer scale, to further facilitate the applications of TMdCs in post silicon technology. △ Less

Submitted 20 October, 2020; originally announced October 2020.

Comments: The supporting information is included in the manuscript file

Band restructuring of ordered/disordered blue TiO2 for visible photocatalyst

Authors: Simgeon Oh, Ji-Hee Kim, Hee Min Hwang, Doyoung Kim, Joosung Kim, G. Hwan Park, Joon Soo Kim, Young Hee Lee, Hyoyoung Lee

Abstract: Black TiO2 with/without noble metal has been proposed for visible photocatalyst, still leaving poor catalyst efficiency. Alternatively, phase-mixed TiO2 such as anatase and rutile has been commonly used for visible catalysts with the inevitable inclusion of noble metal. Here, we perform a noble metal-free visible photocatalyst blue TiO2 with type-II band-aligned ordered anatase/disordered rutile s… ▽ More Black TiO2 with/without noble metal has been proposed for visible photocatalyst, still leaving poor catalyst efficiency. Alternatively, phase-mixed TiO2 such as anatase and rutile has been commonly used for visible catalysts with the inevitable inclusion of noble metal. Here, we perform a noble metal-free visible photocatalyst blue TiO2 with type-II band-aligned ordered anatase/disordered rutile structure, via phase-selective reduction with alkali metals. The changed band alignment in this heterostructure was identified by absorption and ultraviolet photoemission spectroscopy, which was further confirmed by transient charge separation. The band alignment of type-I and type-II was clearly restructured by converting from ordered to disordered phase with a prolonged reduction period and as followed light absorbance enhancement also observed. Initiated type-I in a pristine sample, the type-II was organized from disordered rutile phase in 3-day Li-reduction. The type-II disordered rutile TiO2 heterostructure exhibits a remarkable photocatalytic performance by 55 times higher than conventional P25 TiO2 in solar-light driven hydrogen evolution reaction owing to an efficient electron and hole separation of type-II heterojunction. Furthermore, this restructured heterojunction type-II TiO2 demanded 10 times less Pt amount as a co-catalyst for the comparable photocatalytic performance, compared to Pt decorated type-I pristine anatase/rutile phase-mixed TiO2. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 25 pages, 6 figures

Real-space imaging of acoustic plasmons in large-area CVD graphene

Authors: Sergey G. Menabde, In-Ho Lee, Sanghyub Lee, Heonhak Ha, Jacob T. Heiden, Daehan Yoo, Teun-Teun Kim, Young Hee Lee, Tony Low, Sang-Hyun Oh, Min Seok Jang

Abstract: An acoustic plasmonic mode in a graphene-dielectric-metal heterostructure has recently been spotlighted as a superior platform for strong light-matter interaction. It originates from the coupling of graphene plasmon with its mirror image and exhibits the largest field confinement in the limit of a nm-thick dielectric. Although recently detected in the far-field regime, optical near-fields of this… ▽ More An acoustic plasmonic mode in a graphene-dielectric-metal heterostructure has recently been spotlighted as a superior platform for strong light-matter interaction. It originates from the coupling of graphene plasmon with its mirror image and exhibits the largest field confinement in the limit of a nm-thick dielectric. Although recently detected in the far-field regime, optical near-fields of this mode are yet to be observed and characterized. Direct optical probing of the plasmonic fields reflected by the edges of graphene via near-field scattering microscope reveals a relatively small dam** rate of the mid-IR acoustic plasmons in our devices, which allows for their real-space map** even with unprotected, chemically grown, large-area graphene at ambient conditions. We show an acoustic mode that is twice as confined - yet 1.4 times less damped - compared to the graphene surface plasmon under similar conditions. We also image the resonant acoustic Bloch state in a 1D array of gold nanoribbons responsible for the high efficiency of the far-field coupling. Our results highlight the importance of acoustic plasmons as an exceptionally promising platform for large-area graphene-based optoelectronic devices operating in mid-IR. △ Less

Submitted 3 September, 2020; originally announced October 2020.

Journal ref: Nature Communications 12, 938 (2021)

Andreev reflection in the fractional quantum Hall state

Authors: Önder Gül, Yuval Ronen, Si Young Lee, Hassan Shapourian, Jonathan Zauberman, Young Hee Lee, Kenji Watanabe, Takashi Taniguchi, Ashvin Vishwanath, Amir Yacoby, Philip Kim

Abstract: We construct high-quality graphene-based van der Waals devices with narrow superconducting niobium nitride (NbN) electrodes, in which superconductivity and robust fqH coexist. We find crossed Andreev reflection (CAR) across the superconductor separating two fqH edges. Our observed CAR probabilities in the particle-like fractional fillings are markedly higher than those in the integer and hole-conj… ▽ More We construct high-quality graphene-based van der Waals devices with narrow superconducting niobium nitride (NbN) electrodes, in which superconductivity and robust fqH coexist. We find crossed Andreev reflection (CAR) across the superconductor separating two fqH edges. Our observed CAR probabilities in the particle-like fractional fillings are markedly higher than those in the integer and hole-conjugate fractional fillings and depend strongly on temperature and magnetic field unlike the other fillings. Further, we find a filling-independent CAR probability in integer fillings, which we attribute to spin-orbit coupling in NbN allowing for Andreev reflection between spin-polarized edges. These results provide a route to realize novel topological superconducting phases in fqH-superconductor hybrid devices based on graphene and NbN. △ Less

Submitted 15 October, 2021; v1 submitted 16 September, 2020; originally announced September 2020.

Comments: Revised text, additional main and appendix figures

Journal ref: Physical Review X, Vol.12(2), 021057 (2022)

Aharonov Bohm Effect in Graphene Fabry Pérot Quantum Hall Interferometers

Authors: Yuval Ronen, Thomas Werkmeister, Danial Najafabadi, Andrew T. Pierce, Laurel E. Anderson, Young J. Shin, Si Young Lee, Young Hee Lee, Bobae Johnson, Kenji Watanabe, Takashi Taniguchi, Amir Yacoby, Philip Kim

Abstract: Quantum interferometers are powerful tools for probing the wave-nature and exchange statistics of indistinguishable particles. Of particular interest are interferometers formed by the chiral, one-dimensional (1D) edge channels of the quantum Hall effect (QHE) that guide electrons without dissipation. Using quantum point contacts (QPCs) as beamsplitters, these 1D channels can be split and recombine… ▽ More Quantum interferometers are powerful tools for probing the wave-nature and exchange statistics of indistinguishable particles. Of particular interest are interferometers formed by the chiral, one-dimensional (1D) edge channels of the quantum Hall effect (QHE) that guide electrons without dissipation. Using quantum point contacts (QPCs) as beamsplitters, these 1D channels can be split and recombined, enabling interference of charged particles. Such quantum Hall interferometers (QHIs) can be used for studying exchange statistics of anyonic quasiparticles. In this study we develop a robust QHI fabrication technique in van der Waals (vdW) materials and realize a graphene-based Fabry-Pérot (FP) QHI. By careful heterostructure design, we are able to measure pure Aharonov-Bohm (AB) interference effect in the integer QHE, a major technical challenge in finite size FP interferometers. We find that integer edge modes exhibit high visibility interference due to relatively large velocities and long phase coherence lengths. Our QHI with tunable QPCs presents a versatile platform for interferometer studies in vdW materials and enables future experiments in the fractional QHE. △ Less

Submitted 27 August, 2020; originally announced August 2020.

Modulation Do** via a 2d Atomic Crystalline Acceptor

Authors: Yi** Wang, Jesse Balgley, Eli Gerber, Mason Gray, Narendra Kumar, Xiaobo Lu, Jia-Qiang Yan, Arash Fereidouni, Rabindra Basnet, Seok Joon Yun, Dhavala Suri, Hikari Kitadai, Takashi Taniguchi, Kenji Watanabe, Xi Ling, Jagadeesh Moodera, Young Hee Lee, Hugh O. H. Churchill, ** Hu, Li Yang, Eun-Ah Kim, David G. Mandrus, Erik A. Henriksen, Kenneth S. Burch

Abstract: Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation do** of exfoliated, chemical vapor de… ▽ More Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation do** of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral do** (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN). △ Less

Submitted 15 July, 2020; v1 submitted 13 July, 2020; originally announced July 2020.

Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants

Authors: Bumsub Song, Seok Joon Yun, **bao Jiang, Kory Beach, Wooseon Choi, Young-Min Kim, Humberto Terrones, Young Jae Song, Dinh Loc Duong, Young Hee Lee

Abstract: One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic do** concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive und… ▽ More One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic do** concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive understanding of the mechanism responsible for the gate-tunable long-range magnetic order in DMSs has not been achieved yet. Here, we introduce a monolayer tungsten diselenide (WSe2) semiconductor with V dopants to demonstrate the long-range magnetic order through itinerant spin-polarized holes. The V atoms are sparsely located in the host lattice by substituting W atoms, which is confirmed by scanning tunneling microscopy and high-resolution transmission electron microscopy. The V impurity states and the valence band edge states are overlapped, which is congruent with density functional theory calculations. The field-effect transistor characteristics reveal the itinerant holes within the hybridized band; this clearly resembles the Zener model. Our study gives an insight into the mechanism of the long-range magnetic order in V-doped WSe2, which can also be used for other magnetically doped semiconducting transition metal dichalcogenides. △ Less

Submitted 17 February, 2020; originally announced February 2020.

Comments: 19 pages, 4 figures

Journal ref: Phys. Rev. B 103, 094432 (2021)

Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor

Authors: Dinh Loc Duong, Seong-Gon Kim, Young Hee Lee

Abstract: We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-do** concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V dopi… ▽ More We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-do** concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V do** concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics. △ Less

Submitted 19 January, 2020; originally announced January 2020.

Comments: 13 pages, 4 figures, 1 table

Journal ref: AIP Advances 10, 065220 (2020)

Gate tunable optical absorption and band structure of twisted bilayer graphene

Authors: Kwangnam Yu, Van Luan Nguyen, Tae Soo Kim, Jiwon Jeon, Jiho Kim, Pilkyung Moon, Young Hee Lee, E. J. Choi

Abstract: We report the infrared transmission measurement on electrically gated twisted bilayer graphene. The optical absorption spectrum clearly manifests the dramatic changes such as the splitting of inter-linear-band absorption step, the shift of inter-van Hove singularity transition peak, and the emergence of very strong intra-valence (intra-conduction) band transition. These anomalous optical behaviors… ▽ More We report the infrared transmission measurement on electrically gated twisted bilayer graphene. The optical absorption spectrum clearly manifests the dramatic changes such as the splitting of inter-linear-band absorption step, the shift of inter-van Hove singularity transition peak, and the emergence of very strong intra-valence (intra-conduction) band transition. These anomalous optical behaviors demonstrate consistently the non-rigid band structure modification created by the ion-gel gating through the layer-dependent Coulomb screening. We propose that this screening-driven band modification is an universal phenomenon that persists to other bilayer crystals in general, establishing the electrical gating as a versatile technique to engineer the band structures and to create new types of optical absorptions that can be exploited in electro-optical device application. △ Less

Submitted 7 November, 2019; originally announced November 2019.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. B 99, 241405(R) (2019)

Probing plasmon-NV$^0$ coupling at the nanometer scale with photons and fast electrons

Authors: H. Lourenço-Martins, M. Kociak, S. Meuret, F. Treussart, Yih Hong Lee, Xing Yi Ling, H. C. Chang, L. H. G. Tizei

Abstract: The local density of optical states governs an emitters lifetime and quantum yield through the Purcell effect. It can be modified by a surface plasmon electromagnetic field, but such a field has a spatial extension limited to a few hundreds of nanometers, which complicates the use of optical methods to spatially probe the emitter-plasmon coupling. Here we show that a combination of electron-based… ▽ More The local density of optical states governs an emitters lifetime and quantum yield through the Purcell effect. It can be modified by a surface plasmon electromagnetic field, but such a field has a spatial extension limited to a few hundreds of nanometers, which complicates the use of optical methods to spatially probe the emitter-plasmon coupling. Here we show that a combination of electron-based imaging, spectroscopies and photon-based correlation spectroscopy enables measurement of the Purcell effect with nanometer and nanosecond spatio-temporal resolutions. Due to the large variability of radiative lifetimes of emitters embedded in nanoparticles with inhomogeneous sizes we relied on a statistical approach to unambiguously probe the coupling between nitrogen-vacancy centers (NV^0) in nanodiamonds and surface plasmons in silver nanocubes. We quantified the Purcell effect by measuring the NV^0 excited state lifetimes in a large number of either isolated nanodiamonds or nanodiamond-nanocube dimers and demonstrated a statistically significant lifetime reduction for dimers. △ Less

Submitted 2 June, 2019; originally announced June 2019.

Journal ref: Hugo Lourenco-Martins, et al, ACS Photonics, 5, 324 (2018)

A Cluster Controller for Transition Matrix Calculations

Authors: David Yevick, Yong Hwan Lee

Abstract: We demonstrate that a temperature schedule for single-spin flip transition matrix calculations can be simply and rapidly generated by monitoring the average size of the Wolff clusters at a set of discrete temperatures. Optimizing this schedule yields a potentially interesting quantity related to the fractal structure of Ising clusters. We also introduce a technique in which the transition matrix i… ▽ More We demonstrate that a temperature schedule for single-spin flip transition matrix calculations can be simply and rapidly generated by monitoring the average size of the Wolff clusters at a set of discrete temperatures. Optimizing this schedule yields a potentially interesting quantity related to the fractal structure of Ising clusters. We also introduce a technique in which the transition matrix is constructed at a sequence of discrete temperatures at which Wolff cluster reversals are alternated with certain series of single-spin flip steps. The single spin-flip transitions are then employed to construct a single transition matrix. △ Less

Submitted 23 February, 2019; originally announced February 2019.

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Authors: Seok Joon Yun, Dinh Loc Duong, Manh-Ha Doan, Kirandeep Singh, Thanh Luan Phan, Wooseon Choi, Young-Min Kim, Young Hee Lee

Abstract: Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manif… ▽ More Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-do** concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics. △ Less

Submitted 19 January, 2020; v1 submitted 17 June, 2018; originally announced June 2018.

Comments: 16 pages, 4 figures

Journal ref: Adv. Sci. 2020, 7, 1903076

Transition Matrix Cluster Algorithms

Authors: David Yevick, Yong Hwan Lee

Abstract: We demonstrate that a series of procedures for increasing the efficiency of transition matrix calculations can be realized by integrating the standard single-spin flip transition matrix method with global cluster flip** techniques. Our calculations employ a simple and accurate method based on detailed balance for computing the density of states from the Ising model transition matrix. We demonstrate that a series of procedures for increasing the efficiency of transition matrix calculations can be realized by integrating the standard single-spin flip transition matrix method with global cluster flip** techniques. Our calculations employ a simple and accurate method based on detailed balance for computing the density of states from the Ising model transition matrix. △ Less

Submitted 25 December, 2018; v1 submitted 28 March, 2018; originally announced March 2018.

Journal ref: International Journal of Modern Physics CVol. 30, No. 01, 1950004 (2019)

Highly Efficient Carrier Multiplication in van der Waals layered Materials

Authors: Ji-Hee Kim, Matthew R. Bergren, ** Cheol Park, Subash Adhikari, Michael Lorke, Thomas Fraunheim, Duk-Hyun Choe, Beom Kim, Hyunyong Choi, Tom Gregorkiewicz, Young Hee Lee

Abstract: Carrier multiplication (CM), a photo-physical process to generate multiple electron-hole pairs by exploiting excess energy of free carriers, is explored for efficient photovoltaic conversion of photons from the blue solar band, predominantly wasted as heat in standard solar cells. Current state-of-the-art approaches with nanomaterials have demonstrated improved CM but are not satisfactory due to h… ▽ More Carrier multiplication (CM), a photo-physical process to generate multiple electron-hole pairs by exploiting excess energy of free carriers, is explored for efficient photovoltaic conversion of photons from the blue solar band, predominantly wasted as heat in standard solar cells. Current state-of-the-art approaches with nanomaterials have demonstrated improved CM but are not satisfactory due to high energy loss and inherent difficulties with carrier extraction. Here, we report ultra-efficient CM in van der Waals (vdW) layered materials that commences at the energy conservation limit and proceeds with nearly 100% conversion efficiency. A small threshold energy, as low as twice the bandgap, was achieved, marking an onset of quantum yield with enhanced carrier generation. Strong Coulomb interactions between electrons confined within vdW layers allow rapid electron-electron scattering to prevail over electron-phonon scattering. Additionally, the presence of electron pockets spread over momentum space could also contribute to the high CM efficiency. Combining with high conductivity and optimal bandgap, these superior CM characteristics identify vdW materials for third-generation solar cell. △ Less

Submitted 5 January, 2018; originally announced January 2018.

Comments: 17 pages, 4 figures

Electron-hole pair condensation in Graphene/MoS2 heterointerface

Authors: Min-Kyu Joo, Youngjo **, Byoung Hee Moon, Hyun Kim, Sanghyub Lee, Young Hee Lee

Abstract: Excitons are electron-hole (e-h) pair quasiparticles, which may form a Bose-Einstein condensate (BEC) and collapse into the phase coherent state at low temperature. However, because of ephemeral strength of pairing, a clear evidence for BEC in electron-hole system has not yet been observed. Here, we report electron-hole pair condensation in graphene (Gr)/MoS2 heterointerface at 10K without magneti… ▽ More Excitons are electron-hole (e-h) pair quasiparticles, which may form a Bose-Einstein condensate (BEC) and collapse into the phase coherent state at low temperature. However, because of ephemeral strength of pairing, a clear evidence for BEC in electron-hole system has not yet been observed. Here, we report electron-hole pair condensation in graphene (Gr)/MoS2 heterointerface at 10K without magnetic field. As a direct indication of e-h pair condensation, we demonstrate a vanished Hall drag voltage and the resultant divergence of drag resistance. While strong excitons are formed at Gr/MoS2 heterointerface without insulating layer, carrier recombination via interlayer tunneling of carriers is suppressed by the vertical p-Gr/n-MoS2 junction barrier, consequently yielding high BEC temperature of 10K, ~1000 times higher than that of two-dimensional electron gas in III-V quantum wells. The observed excitonic transport is mainly governed by the interfacial properties of the Gr/MoS2 heterostructure, rather than the intrinsic properties of each layer. Our approach with available large-area monolayer graphene and MoS2 provides a high feasibility for quantum dissipationless electronics towards integration. △ Less

Submitted 1 November, 2017; originally announced November 2017.

Comments: 12 pages, 4 figures

Coulomb drag transistor via graphene/MoS2 heterostructures

Authors: Youngjo **, Min-Kyu Joo, Byoung Hee Moon, Hyun Kim, Sanghyup Lee, Hye Yun Jeong, Hyo Yeol Kwak, Young Hee Lee

Abstract: Two-dimensional (2D) heterointerfaces often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, double-layer graphene separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag the carriers in the passive layer. Here, we propose a new switching device operating via Coulomb drag int… ▽ More Two-dimensional (2D) heterointerfaces often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, double-layer graphene separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag the carriers in the passive layer. Here, we propose a new switching device operating via Coulomb drag interaction at a graphene/MoS2 (GM) heterointerface. The ideal van der Waals distance allows strong coupling of the interlayer electron-hole pairs, whose recombination is prevented by the Schottky barrier formed due to charge transfer at the heterointerface. This device exhibits a high carrier mobility (up to ~3,700 cm^2V^-1s^-1) even at room temperature, while maintaining a high on/off current ratio (~10^8), outperforming those of individual layers. In the electron-electron drag regime, graphene-like Shubnikov-de Haas oscillations are observed at low temperatures. Our Coulomb drag transistor could provide a shortcut for the practical application of quantum-mechanical 2D heterostructures at room temperature. △ Less

Submitted 31 October, 2017; originally announced October 2017.

Comments: 14 pages, 4 figures

Atomic and electronic structure of a copper/graphene interface as prepared and 1.5 years after

Authors: D. W. Boukhvalov, P. F. Bazylewski, A. I. Kukharenko, I. S. Zhidkov, Yu. S. Ponosov, E. Z. Kurmaev, S. O. Cholakh, Y. H. Lee, G. S. Chang

Abstract: We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interf… ▽ More We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interfaces. For evaluation of the stability of the carbon cover, we propose a two-step model. The first step is oxidation of the graphene, and the second is perforation of graphene with the removal of carbon atoms as part of the carbon dioxide molecule. Results of the modeling and experimental measurements provide evidence that graphene grown on high-quality copper substrate becomes robust and stable in time (1.5 years). However, the stability of this interface depends on the quality of the graphene and the number of native defects in the graphene and substrate. The effect of the presence of a metallic substrate with defects on the stability and electronic structure of graphene is also discussed. △ Less

Submitted 30 July, 2017; originally announced July 2017.

Comments: 18 pages, 6 figures, accepted to Appl. Surf. Sci

Dynamic Canonical and Microcanonical Transition Matrix Analyses of Critical Behavior

Authors: David Yevick, Yong Hwan Lee

Abstract: By monitoring the sampling of states with different magnetizations in transition matrix procedures a family of accurate and easily implemented techniques are constructed that automatically control the variation of the temperature or energy as the calculation proceeds. The accuracy of the method for a single Markov chain exceeds that of standard transition matrix procedures that accumulate elements… ▽ More By monitoring the sampling of states with different magnetizations in transition matrix procedures a family of accurate and easily implemented techniques are constructed that automatically control the variation of the temperature or energy as the calculation proceeds. The accuracy of the method for a single Markov chain exceeds that of standard transition matrix procedures that accumulate elements from multiple chains. △ Less

Submitted 27 December, 2016; originally announced December 2016.

Comments: 17 pagess 10 figures

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film

Authors: Jeongmin Park, Haeyong Kang, Kyeong Tae Kang, Yoojoo Yun, Young Hee Lee, Woo Seok Choi, Dongseok Suh

Abstract: Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all te… ▽ More Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance. △ Less

Submitted 16 February, 2016; originally announced February 2016.

Comments: 12 pages, 9 figures (5 figures + 4 figures on supp.) in Nano Letters (2016)

Spin to charge conversion in MoS$_{2}$ monolayer with spin pum**

Authors: Cheng Cheng, Martin Collet, Juan-Carlos Rojas Sánchez, Viktoria Ivanovskaya, Bruno Dlubak, Pierre Seneor, Albert Fert, Hyun Kim, Gang Hee Han, Young Hee Lee, Heejun Yang, Abdelmadjid Anane

Abstract: Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess large intrinsic spin-orbit interaction which make them most relevant for the emerging field of spin-orbitronics. Here we report on the conversion of spin curren… ▽ More Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess large intrinsic spin-orbit interaction which make them most relevant for the emerging field of spin-orbitronics. Here we report on the conversion of spin current to charge current in MoS2 monolayer. Using spin pum** from a ferromagnetic layer (10 nm of cobalt) we find that the spin to charge conversion is highly efficient. Analysis in the frame of the inverse Rashba-Edelstein (RE) effect yields a RE length in excess of 4 nm at room temperature. Furthermore, owing to the semiconducting nature of MoS$_{2}$, it is found that back-gating allows electrical field control of the spin-relaxation rate of the MoS$_{2}$-metallic stack. △ Less

Submitted 6 June, 2016; v1 submitted 12 October, 2015; originally announced October 2015.

The characterization of Co-nanoparticles supported on graphene

Authors: P. Bazylewski, D. W. Boukhvalov, A. I. Kukharenko, E. Z. Kurmaev, A. Hunt, A. Moewes, Y. H. Lee, S. O. Cholakh, G. S. Chang

Abstract: The results of density functional theory calculations and measurements using X-ray photoelectron spectroscopy of Co-nanoparticles dispersed on graphene/Cu are presented. It is found that for low cobalt thickness (0.02 nm - 0.06 nm) the Co forms islands distributed non-homogeneously which are strongly oxidized under exposure to air to form cobalt oxides. At greater thicknesses up to 2 nm the upper… ▽ More The results of density functional theory calculations and measurements using X-ray photoelectron spectroscopy of Co-nanoparticles dispersed on graphene/Cu are presented. It is found that for low cobalt thickness (0.02 nm - 0.06 nm) the Co forms islands distributed non-homogeneously which are strongly oxidized under exposure to air to form cobalt oxides. At greater thicknesses up to 2 nm the upper Co-layers are similarly oxidized whereas the lower layers contacting the graphene remain metallic. The measurements indicate a Co2+ oxidation state with no evidence of a 3+ state appearing at any Co thickness, consistent with CoO and Co[OH]2. The results show that thicker Co (2nm) coverage induces the formation of a protective oxide layer while providing the magnetic properties of Co nanoparticles. △ Less

Submitted 2 September, 2015; originally announced September 2015.

Comments: 20 pages, 8 figures, accepted to RSC Advances. arXiv admin note: text overlap with arXiv:1411.3611

Charge Transport in Polycrystalline Graphene: Challenges and Opportunities

Authors: Aron W. Cummings, Dinh Loc Duong, Van Luan Nguyen, Dinh Van Tuan, Jani Kotakoski, Jose Eduardo Barrios Varga, Young Hee Lee, Stephan Roche

Abstract: Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. Unfortunately, CVD graphene is intrinsically polycrystalline, with pristine graphene grains stitched together by d… ▽ More Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. Unfortunately, CVD graphene is intrinsically polycrystalline, with pristine graphene grains stitched together by disordered grain boundaries, which can be either a blessing or a curse. On the one hand, grain boundaries are expected to degrade the electrical and mechanical properties of polycrystalline graphene, rendering the material undesirable for many applications. On the other hand, they exhibit an increased chemical reactivity, suggesting their potential application to sensing or as templates for synthesis of one-dimensional materials. Therefore, it is important to gain a deeper understanding of the structure and properties of graphene grain boundaries. Here, we review experimental progress on identification and electrical and chemical characterization of graphene grain boundaries. We use numerical simulations and transport measurements to demonstrate that electrical properties and chemical modification of graphene grain boundaries are strongly correlated. This not only provides guidelines for the improvement of graphene devices, but also opens a new research area of engineering graphene grain boundaries for highly sensitive electrobiochemical devices. △ Less

Submitted 22 July, 2015; originally announced July 2015.

Journal ref: Adv. Mater. 26, 5079-5094 (2014)

Selective amplification of primary exciton in monolayer MoS2

Authors: Hyun Seok Lee, Min Su Kim, Youngjo **, Gang Hee Han, Young Hee Lee, Jeongyong Kim

Abstract: Optoelectronics applications for transition-metal dichalcogenides are still limited by weak light absorption and their complex exciton modes are easily perturbed by varying excitation conditions, because they are inherent in atomically thin layers. Here, we propose a method of selectively amplifying the primary exciton (A0) among the exciton complexes in monolayer MoS2 via cyclic re-excitation of… ▽ More Optoelectronics applications for transition-metal dichalcogenides are still limited by weak light absorption and their complex exciton modes are easily perturbed by varying excitation conditions, because they are inherent in atomically thin layers. Here, we propose a method of selectively amplifying the primary exciton (A0) among the exciton complexes in monolayer MoS2 via cyclic re-excitation of cavity-free exciton-coupled plasmon propagation. This was implemented by partially overlap** a Ag nanowire (NW) on a MoS2 monolayer separated by a thin SiO2 spacer. Exciton-coupled plasmons in the NW enhance the A0 radiation in MoS2. The cumulative amplification of emission enhancement by cyclic plasmon travelling reaches ~20-fold selectively for the A0, while excluding other B exciton and multiexciton by significantly reduced band-filling, without oscillatory spectra implying plasmonic cavity effects. △ Less

Submitted 9 September, 2015; v1 submitted 31 March, 2015; originally announced March 2015.

Comments: 4 pages,4 figures

Journal ref: Phys. Rev. Lett. 115, 226801 (2015)

The characterization of Co-nanoparticles supported on graphene

Authors: Paul Bazylewski, Danil W. Boukhvalov, Andrey I. Kukharenko, Ernst. Z. Kurmaev, Nikolay A. Skorikov, Adrian Hunt, Alexander Moewes, Young Hee Lee, Seif O. Cholakh, Gap Soo Chang

Abstract: The results of density functional theory (DFT) calculations and measurements of X-ray photoelectron (XPS) and X-ray emission (XES) spectra of Co-nanoparticles dispersed on graphene/Cu composites are presented. It is found that for 0.02nm and 0.06nm Co coverage the Co atoms form islands which are strongly oxidized under exposure at the air. For Co (2nm) coverage the upper Co-layers is oxidized wher… ▽ More The results of density functional theory (DFT) calculations and measurements of X-ray photoelectron (XPS) and X-ray emission (XES) spectra of Co-nanoparticles dispersed on graphene/Cu composites are presented. It is found that for 0.02nm and 0.06nm Co coverage the Co atoms form islands which are strongly oxidized under exposure at the air. For Co (2nm) coverage the upper Co-layers is oxidized whereas the lower layers contacting with graphene is in metallic state. Therefore Co (2 nm) coverage induces the formation of protective oxide layer providing the ferromagnetic properties of Co nanoparticles which can be used as spin filters in spintronics devices. △ Less

Submitted 17 November, 2014; v1 submitted 13 November, 2014; originally announced November 2014.

Comments: 14 pages, 9 figures

Ultrafast zero balance of the oscillator-strength sum rule in graphene

Authors: Jaeseok Kim, Seong Chu Lim, Seung ** Chae, Inhee Maeng, Younghwan Choi, Soonyoung Cha, Young Hee Lee, Hyunyong Choi

Abstract: Oscillator-strength sum rule in light-induced transitions is one general form of quantum-mechanical identities. Although this sum rule is well established in equilibrium photo-physics, an experimental corroboration for the validation of the sum rule in a nonequilibrium regime has been a long-standing unexplored question. The simple band structure of graphene is an ideal system for investigating th… ▽ More Oscillator-strength sum rule in light-induced transitions is one general form of quantum-mechanical identities. Although this sum rule is well established in equilibrium photo-physics, an experimental corroboration for the validation of the sum rule in a nonequilibrium regime has been a long-standing unexplored question. The simple band structure of graphene is an ideal system for investigating this question due to the linear Dirac-like energy dispersion. Here, we employed both ultrafast terahertz and optical spectroscopy to directly monitor the transient oscillator-strength balancing between quasi-free low-energy oscillators and high-energy Fermi-edge ones. Upon photo-excitation of hot Dirac fermions, we observed that the ultrafast depletion of high-energy oscillators precisely complements the increased terahertz absorption oscillators. Our results may provide an experimental priori to understand, for example, the intrinsic free-carrier dynamics to the high-energy photo-excitation, responsible for optoelectronic operation such as graphene-based phototransistor or solar-energy harvesting devices. △ Less

Submitted 10 September, 2013; originally announced September 2013.

On the mechanisms of precipitation of graphene on nickel thin films

Authors: L. Baraton, Z. B. He, C. S. Lee, C. S. Cojocaru, M. Châtelet, J. -L. Maurice, Y. H. Lee, D. Pribat

Abstract: Growth on transition metal substrates is becoming a method of choice to prepare large-area graphene foils. In the case of nickel, where carbon has a significant solubility, such a growth process includes at least two elementary steps: (1) carbon dissolution into the metal, and (2) graphene precipitation at the surface. Here, we dissolve calibrated amounts of carbon in nickel films, using carbon io… ▽ More Growth on transition metal substrates is becoming a method of choice to prepare large-area graphene foils. In the case of nickel, where carbon has a significant solubility, such a growth process includes at least two elementary steps: (1) carbon dissolution into the metal, and (2) graphene precipitation at the surface. Here, we dissolve calibrated amounts of carbon in nickel films, using carbon ion implantation, and annealing at 725 \circ or 900 \circ. We then use transmission electron microscopy to analyse the precipitation process in detail: the latter appears to imply carbon diffusion over large distances and at least two distinct microscopic mechanisms. △ Less

Submitted 30 June, 2011; v1 submitted 20 June, 2011; originally announced June 2011.

Journal ref: EPL 96 (2011) 46003

Controlled Growth of ZnO Nanowire, Nanowall, and Hybrid Nanostructures on Graphene for Piezoelectric Nanogenerators

Authors: Brijesh Kumar, Keun Young Lee, Hyun-Kyu Park, Seung ** Chae, Young Hee Lee, Sang-Woo Kim

Abstract: Precise control of morphologies of one-dimensional (1D) or 2D nanostructures during growth has not been easily accessible, usually degrading the device performance and therefore limiting applications to various advanced nanoscale electronics and optoelectronics. Graphene could be a platform to serve as a substrate for both morphology control and direct use of electrodes due to its ideal monolayer… ▽ More Precise control of morphologies of one-dimensional (1D) or 2D nanostructures during growth has not been easily accessible, usually degrading the device performance and therefore limiting applications to various advanced nanoscale electronics and optoelectronics. Graphene could be a platform to serve as a substrate for both morphology control and direct use of electrodes due to its ideal monolayer flatness with π electrons. Here, we report that by using graphene directly as a substrate, vertically well-aligned ZnO nanowires and nanowalls were obtained systematically by controlling Au catalyst thickness and growth time, without invoking significant thermal damage on the graphene layer during thermal chemical vapor deposition of ZnO at high temperature of about 900 oC. We further demonstrate a piezoelectric nanogenerator that was fabricated from the vertically aligned nanowire-nanowall ZnO hybrid/graphene structure generates a new type of direct current. △ Less

Submitted 1 February, 2011; originally announced February 2011.

Linking Phase-Field and Atomistic Simulations to Model Dendritic Solidification in Highly Undercooled Melts

Authors: Jean Bragard, Alain Karma, Youngyih H. Lee, Mathis Plapp

Abstract: Even though our theoretical understanding of dendritic solidification is relatively well developed, our current ability to model this process quantitatively remains extremely limited. This is due to the fact that the morphological development of dendrites depends sensitively on the degree of anisotropy of capillary and/or kinetic properties of the solid-liquid interface, which is not precisely k… ▽ More Even though our theoretical understanding of dendritic solidification is relatively well developed, our current ability to model this process quantitatively remains extremely limited. This is due to the fact that the morphological development of dendrites depends sensitively on the degree of anisotropy of capillary and/or kinetic properties of the solid-liquid interface, which is not precisely known for materials of metallurgical interest. Here we simulate the crystallization of highly undercooled nickel melts using a computationally efficient phase-field model together with anisotropic properties recently predicted by molecular dynamics simulations. The results are compared to experimental data and to the predictions of a linearized solvability theory that includes both capillary and kinetic effects at the interface. △ Less

Submitted 10 December, 2001; originally announced December 2001.

Comments: 33 pages + 10 figures, RevTeX preprint, submitted to Interface Science

Three-dimensional dendrite tip morphology at low undercooling

Authors: Alain Karma, Youngyih H. Lee, Mathis Plapp

Abstract: We investigate the three-dimensional morphology of the dendrite tip using the phase-field method. We find that, for low undercoolings, this morphology is ostensibly independent of anisotropy strength except for a localized shape distortion near the tip that only affects the value of the tip radius $ρ$ (which is crudely approximated by $ρ\approx (1-α)ρ_{Iv}$ where $ρ_{Iv}$ is the Ivantsov tip rad… ▽ More We investigate the three-dimensional morphology of the dendrite tip using the phase-field method. We find that, for low undercoolings, this morphology is ostensibly independent of anisotropy strength except for a localized shape distortion near the tip that only affects the value of the tip radius $ρ$ (which is crudely approximated by $ρ\approx (1-α)ρ_{Iv}$ where $ρ_{Iv}$ is the Ivantsov tip radius of an isothermal paraboloid with the same tip velocity and $α$ is the stiffness anisotropy). The universal tip shape, which excludes this distortion, is well fitted by the form $z=-r^2/2+A_4 r^4\cos 4φ$ where $|z|$ is the distance from the tip and all lengths are scaled by $ρ_{Iv}$. This fit yields $A_4$ in the range $0.004-0.005$ in good quantitative agreement with the existing tip morphology measurements in succinonitrile [LaCombe et al., Phys. Rev. E {\bf 52}, 2778 (1995)], which are reanalyzed here and found to be consistent with a single $\cos 4φ$ mode non-axisymmetric deviation from a paraboloid. Moreover, the fin shape away from the tip is well fitted by the power law $z=-a |x|^{5/3}$ with $a\approx 0.68$. Finally, the characterization of the operating state of the dendrite tip is revisited in the light of these results. △ Less

Submitted 1 September, 1999; originally announced September 1999.

Comments: 12 pages, 17 eps figures, submitted to Phys. Rev. E