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Charge self-consistent density functional theory plus ghost rotationally-invariant slave-boson theory for correlated materials
Authors:
Tsung-Han Lee,
Corey Melnick,
Ran Adler,
Xue Sun,
Yongxin Yao,
Nicola Lanatà,
Gabriel Kotliar
Abstract:
We present a charge self-consistent density functional theory combined with the ghost-rotationally-invariant slave-boson (DFT+gRISB) formalism for studying correlated materials. This method is applied to SrVO$_3$ and NiO, representing prototypical correlated metals and charge-transfer insulators. For SrVO$_3$, we demonstrate that DFT+gRISB yields an accurate equilibrium volume and effective mass c…
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We present a charge self-consistent density functional theory combined with the ghost-rotationally-invariant slave-boson (DFT+gRISB) formalism for studying correlated materials. This method is applied to SrVO$_3$ and NiO, representing prototypical correlated metals and charge-transfer insulators. For SrVO$_3$, we demonstrate that DFT+gRISB yields an accurate equilibrium volume and effective mass close to experimentally observed values. Regarding NiO, DFT+gRISB enables the simultaneous description of charge transfer and Mott-Hubbard bands, significantly enhancing the accuracy of the original DFT+RISB approach. Furthermore, the calculated equilibrium volume and spectral function reasonably agree with experimental observations.
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Submitted 13 June, 2024; v1 submitted 7 June, 2024;
originally announced June 2024.
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Anomalous 4$f$ fine structure in TmSe$_{1-x}$Te$_x$ across the metal-insulator transition
Authors:
C. -H. Min,
S. Müller,
W. J. Choi,
L. Dudy,
V. Zabolotny,
M. Heber,
J. D. Denlinger,
C. -J. Kang,
M. Kalläne,
N. Wind,
M. Scholz,
T. L. Lee,
C. Schlueter,
A. Gloskovskii,
E. D. L. Rienks,
V. Hinkov,
H. Bentmann,
Y. S. Kwon,
F. Reinert,
K. Rossnagel
Abstract:
Hybridization between localized 4$f$ and itinerant 5$d$6$s$ states in heavy fermion compounds is a well-studied phenomenon and commonly captured by the paradigmatic Anderson model. However, the investigation of additional electronic interactions, beyond the standard Anderson model, has been limited, despite their predicted important role in the exotic quasiparticle formation in mixed-valence syste…
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Hybridization between localized 4$f$ and itinerant 5$d$6$s$ states in heavy fermion compounds is a well-studied phenomenon and commonly captured by the paradigmatic Anderson model. However, the investigation of additional electronic interactions, beyond the standard Anderson model, has been limited, despite their predicted important role in the exotic quasiparticle formation in mixed-valence systems. We investigate the 4$f$ states in TmSe$_{1-x}$Te$_x$ throughout a semimetal-insulator phase transition, which drastically varies the interactions related to the 4$f$ states. Using synchrotron-based hard x-ray and extreme ultraviolet photoemission spectroscopy, we resolve subtle peak splitting in the 4$f$ peaks near the Fermi level in the mixed-valent semimetal phase. The separation is enhanced by several tens of meV by increasing the lattice parameter by a few percent. Our results elucidate the evolving nature of the 4$f$ state across the phase transition, and provide direct experimental evidence for electronic interactions beyond the standard Anderson model in mixed-valence systems.
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Submitted 4 June, 2024;
originally announced June 2024.
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Hybrid Photoelectron Momentum Microscope at the Soft X-ray Beamline I09 of the Diamond Light Source
Authors:
Matthias Schmitt,
Deepnarayan Biswas,
Olena Tkach,
Olena Fedchenko,
Jieyi Liu,
Hans-Joachim Elmers,
Michael Sing,
Ralph Claessen,
Tien-Lin Lee,
Gerd Schönhense
Abstract:
Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of the matrix element otherwise caused by changing the angle of incidence. We present a new endstation at the soft X-ray branch of beamline I09 at the D…
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Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of the matrix element otherwise caused by changing the angle of incidence. We present a new endstation at the soft X-ray branch of beamline I09 at the Diamond Light Source, UK. The key component is a large single hemispherical spectrometer combined with a time-of-flight analyzer behind the exit slit. The photon energy ranges from hv = 105 eV to 2 keV, with circular polarization available for hv > 150 eV, allowing for circular dichroism measurements in angle-resolved photoemission (CD-ARPES). A focused and monochromatized He lamp is used for offline measurements. Under k-imaging conditions, energy and momentum resolution are 10.2 meV (FWHM) and 0.010 angstroms^-1 (base resolution 4.2 meV with smallest slits and a pass energy of 8 eV). The large angular filling of the entrance lens and hemisphere (225 mm path radius) allows k-field-of-view diameters > 6 angstroms^-1. Energy filtered X-PEEM mode using synchrotron radiation revealed a resolution of 300 nm. As examples we show 2D band map** of bilayer graphene, 3D map** of the Fermi surface of Cu, CD-ARPES for intercalated indenene layers and the sp valence bands of Cu and Au, and full-field photoelectron diffraction patterns of Ge.
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Submitted 2 June, 2024;
originally announced June 2024.
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Active Learning approach to simulations of Strongly Correlated Matter with the Ghost Gutzwiller Approximation
Authors:
Marius S. Frank,
Denis G. Artiukhin,
Tsung-Han Lee,
Yongxin Yao,
Kipton Barros,
Ove Christiansen,
Nicola Lanatà
Abstract:
Quantum embedding (QE) methods such as the Ghost Gutzwiller Approximation (gGA) offer a powerful approach to simulating strongly-correlated systems, but come with the computational bottleneck of computing the ground state of an auxiliary embedding Hamiltonian (EH) iteratively. In this work, we introduce an active learning (AL) framework integrated within the gGA to address this challenge. The meth…
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Quantum embedding (QE) methods such as the Ghost Gutzwiller Approximation (gGA) offer a powerful approach to simulating strongly-correlated systems, but come with the computational bottleneck of computing the ground state of an auxiliary embedding Hamiltonian (EH) iteratively. In this work, we introduce an active learning (AL) framework integrated within the gGA to address this challenge. The methodology is applied to the single-band Hubbard model and results in a significant reduction in the number of instances where the EH must be solved. Through a principal component analysis (PCA), we find that the EH parameters form a low-dimensional structure that is largely independent of the geometric specifics of the systems, especially in the strongly-correlated regime. Our AL strategy enables us to discover this low-dimensionality structure on the fly, while leveraging it for reducing the computational cost of gGA, laying the groundwork for more efficient simulations of complex strongly-correlated materials.
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Submitted 12 December, 2023; v1 submitted 8 December, 2023;
originally announced December 2023.
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Low-energy electronic interactions in ferrimagnetic Sr2CrReO6 thin films
Authors:
Guillaume Marcaud,
Alex Taekyung Lee,
Adam J. Hauser,
F. Y. Yang,
Sangjae Lee,
Diego Casa,
Mary Upton,
Thomas Gog,
Kayahan Saritas,
Yilin Wang,
Mark P. M. Dean,
Hua Zhou,
Zhan Zhang,
F. J. Walker,
Ignace Jarrige,
Sohrab Ismail-Beigi,
Charles Ahn
Abstract:
We reveal in this study the fundamental low-energy landscape in the ferrimagnetic Sr2CrReO6 double perovskite and describe the underlying mechanisms responsible for the three low-energy excitations below 1.4 eV. Based on resonant inelastic x-ray scattering and magnetic dynamics calculations, and experiments collected from both Sr2CrReO6 powders and epitaxially strained thin films, we reveal a stro…
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We reveal in this study the fundamental low-energy landscape in the ferrimagnetic Sr2CrReO6 double perovskite and describe the underlying mechanisms responsible for the three low-energy excitations below 1.4 eV. Based on resonant inelastic x-ray scattering and magnetic dynamics calculations, and experiments collected from both Sr2CrReO6 powders and epitaxially strained thin films, we reveal a strong competition between spin-orbit coupling, Hund's coupling, and the strain-induced tetragonal crystal field. We also demonstrate that a spin-flip process is at the origin of the lowest excitation at 200 meV, and we bring insights into the predicted presence of orbital ordering in this material. We study the nature of the magnons through a combination of ab initio and spin-wave theory calculations, and show that two nondegenerate magnon bands exist and are dominated either by rhenium or chromium spins. The rhenium band is found to be flat at about 200 meV ($\pm$25 meV) through X-L-W-U high-symmetry points and is dispersive toward $Γ$
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Submitted 17 October, 2023;
originally announced October 2023.
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{SSH coupled-spring systems
Authors:
Jie-Ying Kuo,
Tsung-Yen Lee,
Yi-Chia Chiu,
Sheng-Rong Liao,
Hsien-chung Kao
Abstract:
It is known that there is also a topological phase in the SSH coupled-spring system with the fixed-end boundary conditions. When this is the case, there would exist edge modes on its boundaries. In contrast, if the system satisfies the free-end boundary conditions, there is no edge mode, even if it is the topological phase. We show that by varying the force constant of the spring by the boundary i…
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It is known that there is also a topological phase in the SSH coupled-spring system with the fixed-end boundary conditions. When this is the case, there would exist edge modes on its boundaries. In contrast, if the system satisfies the free-end boundary conditions, there is no edge mode, even if it is the topological phase. We show that by varying the force constant of the spring by the boundary in such a system, edge modes would generally appear independent of whether the bulk of the system is in the topological or trivial phases. Moreover, edge modes could exist even if the system satisfies the free-end boundary conditions.
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Submitted 30 September, 2023;
originally announced October 2023.
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First-principle Study of Multiple Metastable Charge Ordering States in La$_{1/3}$Sr$_{2/3}$FeO$_{3}$
Authors:
Nam Nguyen,
Alex Taekyung Lee,
Vijay Singh,
Anh T. Ngo,
Hyowon Park
Abstract:
La doped SrFeO$_{3}$, La$_{1/3}$Sr$_{2/3}$FeO$_{3}$, exhibits a metal-to-insulator transition accompanied by both antiferromagnetic and charge ordering states along with the Fe-O bond disproportionation below a critical temperature near 200K. Unconventionally slow charge dynamics measured in this material near the critical temperature shows that its excited charge ordering states can exhibit novel…
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La doped SrFeO$_{3}$, La$_{1/3}$Sr$_{2/3}$FeO$_{3}$, exhibits a metal-to-insulator transition accompanied by both antiferromagnetic and charge ordering states along with the Fe-O bond disproportionation below a critical temperature near 200K. Unconventionally slow charge dynamics measured in this material near the critical temperature shows that its excited charge ordering states can exhibit novel electronic structures with nontrivial energy profiles. Here, we reveal possible metastable states of charge ordering structures in La$_{1/3}$Sr$_{2/3}$FeO$_{3}$ using the first-principle and climbing image nudged elastic band methods. In the strong correlation regime, La$_{1/3}$Sr$_{2/3}$FeO$_{3}$ is an antiferromagnetic insulator with a charge ordering state of the big-small-big pattern, consistent with the experimental measurement of this material at the low temperature. As the correlation effect becomes weak, we find at least two possible metastable charge ordering states with the distinct Fe-O bond disproportionation. Remarkably, a ferroelectric metallic state emerges with the small energy barrier of $\sim$7 meV, driven by a metastable CO state of the small-medium-big pattern. The electronic structures of these metastable charge ordering states are noticeably different from those of the ground-state. Our results can provide an insightful explanation to multiple metastable charge ordering states and the slow charge dynamics of this and related oxide materials.
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Submitted 7 September, 2023;
originally announced September 2023.
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Probing the Surface Polarization of Ferroelectric Thin Films by X-ray Standing Waves
Authors:
Le Phuong Hoang,
Irena Spasojevic,
Tien-Lin Lee,
David Pesquera,
Kai Rossnagel,
Jörg Zegenhagen,
Gustau Catalan,
Ivan A. Vartanyants,
Andreas Scherz,
Giuseppe Mercurio
Abstract:
Understanding the mechanisms underlying a stable polarization at the surface of ferroelectric thin films is of particular importance both from a fundamental point of view and to achieve control of the surface polarization itself. In this study, it is demonstrated that the X-ray standing wave technique allows the polarization near the surface of a ferroelectric thin film to be probed directly. The…
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Understanding the mechanisms underlying a stable polarization at the surface of ferroelectric thin films is of particular importance both from a fundamental point of view and to achieve control of the surface polarization itself. In this study, it is demonstrated that the X-ray standing wave technique allows the polarization near the surface of a ferroelectric thin film to be probed directly. The X-ray standing wave technique is employed to determine, with picometer accuracy, Ti and Ba atomic positions near the surface of three differently strained $\mathrm{BaTiO_3}$ thin films grown on scandate substrates, with a $\mathrm{SrRuO_3}$ film as bottom electrode. This technique gives direct access to atomic positions, and thus to the local ferroelectric polarization, within the first 3 unit cells below the surface. By employing X-ray photoelectron spectroscopy, a detailed overview of the oxygen-containing species adsorbed on the surface, upon exposure to ambient conditions, is obtained. The combination of structural and spectroscopic information allows us to conclude on the most plausible mechanisms that stabilize the surface polarization in the three samples under study. The different amplitude and orientation of the local ferroelectric polarizations are associated with surface charges attributed to the type, amount and spatial distribution of the oxygen-containing adsorbates.
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Submitted 4 September, 2023;
originally announced September 2023.
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Delocalized polaron and Burstein-Moss shift induced by Li in $α$-$\textrm{V}_{2}\textrm{O}_{5}$: DFT+DMFT study
Authors:
Huu T. Do,
Alex Taekyung Lee,
Hyowon Park,
Anh T. Ngo
Abstract:
We performed density functional theory (DFT)+$U$ and dynamical mean field theory (DMFT) calculations with continuous time quantum Monte Carlo impurity solver to investigate the electronic properties of V$_2$O$_5$ and Li$_x$V$_2$O$_5$ ($x$ = 0.125 and 0.25). Pristine V$_2$O$_5$ is a charge-transfer insulator with strong O $p$-V $d$ hybridization, and exhibits a large band gap ($E_{\textrm{gap}}$) a…
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We performed density functional theory (DFT)+$U$ and dynamical mean field theory (DMFT) calculations with continuous time quantum Monte Carlo impurity solver to investigate the electronic properties of V$_2$O$_5$ and Li$_x$V$_2$O$_5$ ($x$ = 0.125 and 0.25). Pristine V$_2$O$_5$ is a charge-transfer insulator with strong O $p$-V $d$ hybridization, and exhibits a large band gap ($E_{\textrm{gap}}$) as well as non-zero conduction band (CB) gap. We show that the band gap, the number of $d$ electrons of vanadium, $N_d$, and conduction band (CB) gap for V$_2$O$_5$ obtained from our DMFT calculations are in excellent agreement with the experimental values. While the DFT+$U$ approach replicates the experimental band gap, it overestimates the value of $N_d$ and underestimates the CB gap. In the presence of low Li do**, the electronic properties of V$_2$O$_5$ are mainly driven by a polaronic mechanism, the electron spin resonance and electron nuclear double resonance spectroscopies observed the coexistence of free and bound polarons. Notably, our DMFT results identify both polaron types, with the bound polaron being energetically preferred, while DFT+$U$ method predicts only the free polaron. Our DMFT analysis also reveals that increased Li do** leads to electron filling in the conduction band, shifting the Fermi level, this result consistent with the observed Burstein-Moss shift upon enhanced Li do** and we thus demonstrate that the DFT+DMFT approach can be used for accurate and realistic description of strongly correlated materials.
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Submitted 27 November, 2023; v1 submitted 8 August, 2023;
originally announced August 2023.
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Revealing the bonding nature and electronic structure of early transition metal dihydrides
Authors:
Curran Kalha,
Laura E. Ratcliff,
Giorgio Colombi,
Christoph Schlueter,
Bernard Dam,
Andrei Gloskovskii,
Tien-Lin Lee,
Pardeep K. Thakur,
Prajna Bhatt,
Yujiang Zhu,
Jürg Osterwalder,
Francesco Offi,
Giancarlo Panaccione,
Anna Regoutz
Abstract:
Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understand…
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Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understanding the electronic structure and chemical environment of hydrogen within them remains a key challenge. This work presents a new analytical pathway to explore these aspects in technologically relevant systems using Hard X-ray Photoelectron Spectroscopy (HAXPES) on thin films of two prototypical metal dihydrides: YH$_{2-δ}$ and TiH$_{2-δ}$. By taking advantage of the tunability of synchrotron radiation, a non-destructive depth profile of the chemical states is obtained using core level spectra. Combining experimental valence band spectra collected at varying photon energies with theoretical insights from density functional theory (DFT) calculations, a description of the bonding nature and the role of d versus sp contributions to states near the Fermi energy are provided. Moreover, a reliable determination of the enthalpy of formation is proposed by using experimental values of the energy position of metal s band features close to the Fermi energy in the HAXPES valence band spectra.
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Submitted 25 May, 2023;
originally announced May 2023.
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Accuracy of ghost-rotationally-invariant slave-boson theory for multiorbital Hubbard models and realistic materials
Authors:
Tsung-Han Lee,
Corey Melnick,
Ran Adler,
Nicola Lanatà,
Gabriel Kotliar
Abstract:
We assess the accuracy of the ghost-rotationally-invariant slave-boson (g-RISB) theory in multiorbital systems by applying it to both the three-orbital degenerate Hubbard model and a realistic Sr2RuO4 model extracted from first principle simulations, and comparing the results to those obtained using the dynamical mean-field theory (DMFT). Our findings indicate that g-RISB's accuracy can be systema…
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We assess the accuracy of the ghost-rotationally-invariant slave-boson (g-RISB) theory in multiorbital systems by applying it to both the three-orbital degenerate Hubbard model and a realistic Sr2RuO4 model extracted from first principle simulations, and comparing the results to those obtained using the dynamical mean-field theory (DMFT). Our findings indicate that g-RISB's accuracy can be systematically improved toward the exact DMFT limit in infinite dimensional multiorbital models by increasing the number of ghost orbitals. This allows for a more precise description of aspects of Hund metal physics and Mott physics compared to the original RISB approach. We also demonstrate that g-RISB reliably captures the quasiparticle weights, Fermi surface, and low-energy spectral function for the realistic Sr2RuO4 model compared to DMFT. Moreover, we showcase the potential of using the density matrix renormalization group method as an impurity solver within the g-RISB framework to study systems with a larger number of ghost orbitals. These results show the potential of g-RISB as a reliable tool for simulating correlated materials. The connection between the g-RISB and DMFT self-energy is also discussed.
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Submitted 30 January, 2024; v1 submitted 18 May, 2023;
originally announced May 2023.
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Stabilizing an atomically thin quantum spin Hall insulator at ambient conditions: Graphene-intercalation of indenene
Authors:
Cedric Schmitt,
Jonas Erhardt,
Philipp Eck,
Matthias Schmitt,
Kyungchan Lee,
Tim Wagner,
Philipp Keßler,
Martin Kamp,
Timur Kim,
Cephise Cacho,
Tien-Lin Lee,
Giorgio Sangiovanni,
Simon Moser,
Ralph Claessen
Abstract:
Atomic monolayers on semiconductor surfaces represent a new class of functional quantum materials at the ultimate two-dimensional limit, ranging from superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] to quantum spin Hall insulators (QSHI) [6, 7]. A case in point is the recently discovered QSHI indenene [7, 8], a triangular monolayer of indium epitaxially grown on SiC(0001), e…
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Atomic monolayers on semiconductor surfaces represent a new class of functional quantum materials at the ultimate two-dimensional limit, ranging from superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] to quantum spin Hall insulators (QSHI) [6, 7]. A case in point is the recently discovered QSHI indenene [7, 8], a triangular monolayer of indium epitaxially grown on SiC(0001), exhibiting a $\sim$120meV gap and substrate-matched monodomain growth on the technologically relevant $μ$m scale [9]. Its suitability for room-temperature spintronics is countered, however, by the instability of pristine indenene in air, which destroys the system along with its topological character, nullifying hopes of ex-situ processing and device fabrication. Here we show how indenene intercalation into epitaxial graphene offers effective protection from the oxidizing environment, while it leaves the topological character fully intact. This opens an unprecedented realm of ex-situ experimental opportunities, bringing this monolayer QSHI within realistic reach of actual device fabrication and edge channel transport.
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Submitted 12 May, 2023;
originally announced May 2023.
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Effect of Off-Diagonal Elements in Wannier Hamiltonian on DFT+DMFT for low-symmetry material: Study of Li$_2$MnO$_3$
Authors:
Alex Taekyung Lee,
Hyowon Park,
Anh T. Ngo
Abstract:
We study the effect of the off-diagonal elements of the Wannier Hamiltonian on the electronic structure of low-symmetry material Li$_2$MnO$_3$ ($C2/m$), using dynamical mean field theory calculations with continuous-time Quantum Monte Carlo impurity solver. Presence of significant off-diagonal elements leads to a pronounced suppression of the energy gap. The off-diagonal elements are largest when…
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We study the effect of the off-diagonal elements of the Wannier Hamiltonian on the electronic structure of low-symmetry material Li$_2$MnO$_3$ ($C2/m$), using dynamical mean field theory calculations with continuous-time Quantum Monte Carlo impurity solver. Presence of significant off-diagonal elements leads to a pronounced suppression of the energy gap. The off-diagonal elements are largest when the Wannier projection is used based on the global coordinate, and they remain substantial even with the projection using the local coordinate close to the direction of Mn-O bonds. We show that the energy gap is enhanced by the diagonalization of the Mn $d$ block in the full $p$-$d$ Hamiltonian, with applying unitary rotation matrix. Additionally, the inclusion of a small double counting energy is crucial for achieving the experimental gap by reducing $p$-$d$ hybridization. Furthermore, we establish the efficiency of a low-energy ($d$-only basis) model for studying the electronic structure of Li$_2$MnO$3$, as the Wannier basis represents a hybridized state of Mn $d$ and O $p$ orbitals. These findings suggest an appropriate new approach for investigating low-symmetry materials using the DFT+DMFT method. To the best of our knowledge, no systematic study of the effect of off-diagonal terms has been conducted thus far. We also find that the antiferromagnetic ground state $Γ_{2u}$ is stable with $U \leq 2$ eV within density functional theory+$U$ calculations, which is much smaller than widely used $U$=5 eV.
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Submitted 27 November, 2023; v1 submitted 4 April, 2023;
originally announced April 2023.
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Superconducting topological Dirac semimetals: $P6/m$-Si$_6$ and $P6/m$-NaSi$_6$
Authors:
Alex Takyung Lee,
Kyungwha Park,
In-Ho Lee
Abstract:
We theoretically propose that hexagonal silicon-based crystals, $P6/m$-Si$_6$ and $P6/m$-NaSi$_6$, are topological Dirac semimetals with superconducting critical temperatures of 12 K and 13 K, respectively, at ambient pressure. Band inversion occurs with the Fu-Kane topological invariant $\mathbb{Z}_2=1$, even in the absence of spin-orbit coupling. The Dirac nodes protected by $C_6$ crystal rotati…
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We theoretically propose that hexagonal silicon-based crystals, $P6/m$-Si$_6$ and $P6/m$-NaSi$_6$, are topological Dirac semimetals with superconducting critical temperatures of 12 K and 13 K, respectively, at ambient pressure. Band inversion occurs with the Fu-Kane topological invariant $\mathbb{Z}_2=1$, even in the absence of spin-orbit coupling. The Dirac nodes protected by $C_6$ crystal rotational symmetry remain gapless with spin-orbit coupling. Using first-principles calculations, we find pressure-induced topological phase transitions for $P6/m$-Si$_6$ and $P6/m$-NaSi$_6$ with critical external pressures of 11.5 GPa and 14.9 GPa, respectively. Above the critical pressures, the Dirac bands are gapped with $\mathbb{Z}_2=0$, while the superconducting states and the crystal symmetries are retained.Our results may shed light into a search for silicon-based topological materials with superconductivity.
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Submitted 31 March, 2023;
originally announced March 2023.
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Surface termination control of charge transfer and band alignment across a semiconductor-crystalline oxide heterojunction
Authors:
M. Chrysler,
J. Gabel,
T. -L. Lee,
Z. Zhu,
T. C. Kaspar,
P. V. Sushko,
S. A. Chambers,
J. H. Ngai
Abstract:
Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO3. Itinerant electrons in Si migrate across the interface toward the surface of SrTiO3 due to surface depletion.…
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Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO3. Itinerant electrons in Si migrate across the interface toward the surface of SrTiO3 due to surface depletion. The electron transfer in turn creates an electric field across the interface that modifies the interfacial dipole associated with bonding between SrTiO3 and Si, leading to a change in the band alignment from type-II to type-III. By cap** the SrTiO3 surface with ultra-thin layers of BaO, SrO or TiO2, charge transfer across the interface can be weakened or inhibited. Ab initio modeling implicates the adsorption of oxygen as driving surface depletion in SrTiO3. The electronic coupling between the surface and buried interface expands the functionality of semiconductor-crystalline oxide heterojunctions.
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Submitted 24 March, 2023;
originally announced March 2023.
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Capturing the dynamics of Ti diffusion across Ti$_x$W$_{1-x}$/Cu heterostructures using X-ray photoelectron spectroscopy
Authors:
Curran Kalha,
Pardeep K. Thakur,
Tien-Lin Lee,
Michael Reisinger,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena, experimental approaches must go beyond static and post-mortem studies to include in-situ and in-operando setups. Here, soft and hard X-ray photoelectron spectroscopy (SX…
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Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena, experimental approaches must go beyond static and post-mortem studies to include in-situ and in-operando setups. Here, soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) is used to monitor diffusion in real-time across a proxy device. The device consists of a Si/SiO\textsubscript{2}/Ti$_x$W$_{1-x}$(300 nm)/Cu(25 nm) thin film material stack, with the Ti$_x$W$_{1-x}$ film acting as a diffusion barrier between Si and Cu. The monitoring of diffusion is achieved through the continuous collection of spectra whilst in-situ annealing to 673 K. Ti within the TiW is found to be highly mobile during annealing, diffusing out of the barrier and accumulating at the Cu surface. Increasing the Ti concentration within the Ti$_x$W$_{1-x}$ film increases the quantity of accumulated Ti, and Ti is first detected at the Cu surface at temperatures as low as 550 K. Surprisingly, at low Ti concentrations ($x$ = 0.054), W is also mobile and diffuses alongside Ti. These results provide crucial evidence for the importance of diffusion barrier composition on their efficacy during device application, delivering insights into the mechanisms underlying their effectiveness and limitations.
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Submitted 19 January, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Compositionally Complex Perovskite Oxides as a New Class of Li-Ion Solid Electrolytes
Authors:
Shu-Ting Ko,
Tom Lee,
Ji Qi,
Dawei Zhang,
Wei-Tao Peng,
Xin Wang,
Wei-Che Tsai,
Shikai Sun,
Zhaokun Wang,
William J. Bowman,
Shyue ** Ong,
Xiaoqing Pan,
Jian Luo
Abstract:
Compositionally complex ceramics (CCCs), including high-entropy ceramics (HECs) as a subclass, offer new opportunities of materials discovery beyond the traditional methodology of searching new stoichiometric compounds. Herein, we establish new strategies of tailoring CCCs via a seamless combination of (1) non-equimolar compositional designs and (2) controlling microstructures and interfaces. Usin…
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Compositionally complex ceramics (CCCs), including high-entropy ceramics (HECs) as a subclass, offer new opportunities of materials discovery beyond the traditional methodology of searching new stoichiometric compounds. Herein, we establish new strategies of tailoring CCCs via a seamless combination of (1) non-equimolar compositional designs and (2) controlling microstructures and interfaces. Using oxide solid electrolytes for all-solid-state batteries as an exemplar, we validate these new strategies via discovering a new class of compositionally complex perovskite oxides (CCPOs) to show the possibility of improving ionic conductivities beyond the limit of conventional do**. As an example (amongst the 28 CCPOs examined), we demonstrate that the ionic conductivity can be improved by >60% in (Li0.375Sr0.4375)(Ta0.375Nb0.375Zr0.125Hf0.125)O3-δ, in comparison with the state-of-art (Li0.375Sr0.4375)(Ta0.75Zr0.25)O3-δ (LSTZ) baseline, via maintaining comparable electrochemical stability. Furthermore, the ionic conductivity can be improved by another >70% via grain boundary (GB) engineering, achieving >270% of the LSTZ baseline. This work suggests transformative new strategies for designing and tailoring HECs and CCCs, thereby opening a new window for discovering materials for energy storage and many other applications.
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Submitted 27 December, 2022;
originally announced December 2022.
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Spin and electronic excitations in $4f$ atomic chains on Au(111) substrates
Authors:
David W. Facemyer,
Naveen K. Dandu,
Alex Taekyung Lee,
Vijay R. Singh,
Anh T. Ngo,
Sergio E. Ulloa
Abstract:
High spin systems, like those that incorporate rare-earth $4f$ elements (REEs), are increasingly relevant in many fields. Although research in such systems is sparse, the large Hilbert spaces they occupy are promising for many applications. In this work, we examine a one-dimensional linear array of europium (Eu) atoms on a Au(111) surface and study their electronic and magnetic excitations. Ab ini…
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High spin systems, like those that incorporate rare-earth $4f$ elements (REEs), are increasingly relevant in many fields. Although research in such systems is sparse, the large Hilbert spaces they occupy are promising for many applications. In this work, we examine a one-dimensional linear array of europium (Eu) atoms on a Au(111) surface and study their electronic and magnetic excitations. Ab initio calculations using VASP with PBE+U are employed to study the structure. We find Eu atoms to have a net charge when on gold, consistent with a net magnetic momemt of $\simeq 3.5 μ_B$. Examining various spin-projection configurations, we can evaluate first and second neighbor exchange energies in an isotropic Heisenberg model between spin-$\frac{7}{2}$ moments to obtain $J_1 \approx -1.2 \, \mathrm{K}$ and $J_2 \approx 0.2 \, \mathrm{K}$ for the relaxed-chain atomic separation of $a \approx 5$ $\mathrm{\dot{A}}$. These parameters are used to obtain the full spin excitation spectrum of a physically realizable four-atom chain. The large $|J_1|/J_2$ ratio results in a highly degenerate ferromagnetic ground state that is split by a significant easy plane single ion anisotropy of $0.6$ K. Spin-flip excitations are calculated to extract differential conductance profiles as those obtained by scanning tunneling microscopy techniques. We uncover interesting behavior of local spin excitations, especially as we track their dispersion with applied magnetic fields.
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Submitted 19 July, 2023; v1 submitted 16 December, 2022;
originally announced December 2022.
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Accuracy of ghost-rotationally-invariant slave-boson and dynamical mean field theory as a function of the impurity-model bath size
Authors:
Tsung-Han Lee,
Nicola Lanatà,
Gabriel Kotliar
Abstract:
We compare the accuracy of the ghost-rotationally-invariant slave-boson (g-RISB) theory and dynamical mean-field theory (DMFT) on the single-band Hubbard model, as a function of the number of bath sites in the embedding impurity Hamiltonian. Our benchmark calculations confirm that the accuracy of g-RISB can be systematically improved by increasing the number of bath sites, similar to DMFT. With a…
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We compare the accuracy of the ghost-rotationally-invariant slave-boson (g-RISB) theory and dynamical mean-field theory (DMFT) on the single-band Hubbard model, as a function of the number of bath sites in the embedding impurity Hamiltonian. Our benchmark calculations confirm that the accuracy of g-RISB can be systematically improved by increasing the number of bath sites, similar to DMFT. With a few bath sites, we observe that g-RISB is systematically more accurate than DMFT for the ground-state observables. On the other hand, the relative accuracy of these methods is generally comparable for the quasiparticle weight and the spectral function. As expected, we observe that g-RISB satisfies the variational principle in infinite dimensions, as the total energy decreases monotonically towards the exact value as a function of the number of bath sites, suggesting that the g-RISB wavefunction may approach the exact ground state in infinite dimensions. Our results suggest that the g-RISB is a promising method for first principle simulations of strongly correlated matter, which can capture the behavior of both static and dynamical observables, at a relatively low computational cost.
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Submitted 21 December, 2022; v1 submitted 14 December, 2022;
originally announced December 2022.
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Intertwined Orders and Electronic Structure in Superconducting Vortex Halos
Authors:
Yi-Hsuan Liu,
Wei-Lin Tu,
Gia-Wei Chern,
Ting-Kuo Lee
Abstract:
We present a comprehensive study of vortex structures in $d$-wave superconductors from large-scale renormalized mean-field theory of the square-lattice $t$-$t'$-$J$ model, which has been shown to provide a quantitative modeling for high-$T_c$ cuprate superconductors. With an efficient implementation of the kernel polynomial method for solving electronic structures, self-consistent calculations inv…
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We present a comprehensive study of vortex structures in $d$-wave superconductors from large-scale renormalized mean-field theory of the square-lattice $t$-$t'$-$J$ model, which has been shown to provide a quantitative modeling for high-$T_c$ cuprate superconductors. With an efficient implementation of the kernel polynomial method for solving electronic structures, self-consistent calculations involving up to $10^5$ variational parameters are performed to investigate the vortex solutions on lattices of up to $10^4$ sites. By taking into account the strong correlation of the model, our calculations shed new lights on two puzzling results that have emerged from recent scanning tunneling microscopy (STM) experiments. The first concerns the issue of the zero-biased-conductance peak (ZBCP) at the vortex core for a uniform $d$-wave superconducting state. Despite its theoretical prediction, the ZBCP was not observed in most do** range of cuprates except in heavily over-doped samples at low magnetic field. The second issue is the nature of the checkerboard charge density waves (CDWs) with a period of about 8 unit cells in the vortex halo at optimal do**. Although it has been suggested that such bipartite structure arises from low-energy quasiparticle interference, another intriguing scenario posits that the checkerboard CDWs originate from an underlying bidirectional pair-density wave (PDW) ordering with the same period. We present a coherent interpretation of these experimental results based on systematic studies of the do** and magnetic field effects on vortex solutions with and without a checkerboard structure. The mechanism of the emergent intertwined orders within the vortex halo is also discussed.
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Submitted 11 December, 2022;
originally announced December 2022.
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Donor-acceptor co-adsorption ratio controls structure and electronic properties of two-dimensional alkali-organic networks on Ag(100)
Authors:
B. Sohail,
P. J. Blowey,
L. A. Rochford,
P. T. P. Ryan,
D. A. Duncan,
T. -L. Lee,
P. Starrs,
G. Costantini,
D. P. Woodruff,
R. J. Maurer
Abstract:
The results are presented of a detailed combined experimental and theoretical investigation of the influence of coadsorbed electron-donating alkali atoms and the prototypical electron acceptor molecule TCNQ (7,7,8,8-tetracyanoquinodimethane) on the Ag(100) surface. Several coadsorption phases were characterised by scanning tunnelling microscopy, low energy electron diffraction, and soft-X-ray phot…
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The results are presented of a detailed combined experimental and theoretical investigation of the influence of coadsorbed electron-donating alkali atoms and the prototypical electron acceptor molecule TCNQ (7,7,8,8-tetracyanoquinodimethane) on the Ag(100) surface. Several coadsorption phases were characterised by scanning tunnelling microscopy, low energy electron diffraction, and soft-X-ray photoelectron spectroscopy. Quantitative structural data were obtained using normal incidence X-ray standing wave (NIXSW) measurements and compared with the results of density functional theory (DFT) calculations using several different methods of dispersion correction. Generally good agreement between theory and experiment was achieved for the quantitative structures, albeit with prediction of the alkali atom heights being challenging for some methods. The adsorption structures depend sensitively on the interplay of molecule-metal charge transfer and long-range dispersion forces, which are controlled by the composition ratio between alkali atoms and TCNQ. The large difference in atomic size between K and Cs has negligible effects on stability, whereas increasing the ratio of K:TCNQ from 1:4 to 1:1 leads to a weakening of molecule-metal interaction strength in favour of stronger ionic bonds within the two-dimensional alkali-organic network. A strong dependence of the work function on the alkali donor-TCNQ acceptor co-adsorption ratio is predicted.
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Submitted 15 January, 2023; v1 submitted 23 August, 2022;
originally announced August 2022.
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Revealing 3-dimensional core-shell interface structures at the single-atom level
Authors:
Hyesung Jo,
Dae Han Wi,
Taegu Lee,
Yongmin Kwon,
Chaehwa Jeong,
Juhyeok Lee,
Hionsuck Baik,
Alexander J. Pattison,
Wolfgang Theis,
Colin Ophus,
Peter Ercius,
Yea-Lee Lee,
Seunghwa Ryu,
Sang Woo Han,
Yongsoo Yang
Abstract:
Nanomaterials with core-shell architectures are prominent examples of strain-engineered materials, where material properties can be designed by fine-tuning the misfit strain at the interface. Here, we elucidate the full 3D atomic structure of Pd@Pt core-shell nanoparticles at the single-atom level via atomic electron tomography. Full 3D displacement fields and strain profiles of core-shell nanopar…
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Nanomaterials with core-shell architectures are prominent examples of strain-engineered materials, where material properties can be designed by fine-tuning the misfit strain at the interface. Here, we elucidate the full 3D atomic structure of Pd@Pt core-shell nanoparticles at the single-atom level via atomic electron tomography. Full 3D displacement fields and strain profiles of core-shell nanoparticles were obtained, which revealed a direct correlation between the surface and interface strain. It also showed clear Poisson effects at the scale of the full nanoparticle as well as the local atomic bonds. The strain distributions show a strong shape-dependent anisotropy, whose nature was further corroborated by molecular statics simulations. From the observed surface strains, the surface oxygen reduction reaction activities were predicted. These findings give a deep understanding of structure-property relationships in strain-engineerable core-shell systems, which could pave a new way toward direct control over the resulting catalytic properties.
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Submitted 14 July, 2022;
originally announced July 2022.
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Tackling Disorder in $γ$-Ga$_2$O$_3$
Authors:
Laura E. Ratcliff,
Takayoshi Oshima,
Felix Nippert,
Benjamin M. Janzen,
Elias Kluth,
Rüdiger Goldhahn,
Martin Feneberg,
Piero Mazzolini,
Oliver Bierwagen,
Charlotte Wouters,
Musbah Nofal,
Martin Albrecht,
Jack E. N. Swallow,
Leanne A. H. Jones,
Pardeep K. Thakur,
Tien-Lin Lee,
Curran Kalha,
Christoph Schlueter,
Tim D. Veal,
Joel B. Varley,
Markus R. Wagner,
Anna Regoutz
Abstract:
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent…
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Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby develo** a robust atomistic model of the $γ$-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$-Ga$_2$O$_3$. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.
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Submitted 9 May, 2022;
originally announced May 2022.
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Photothermal responsivity of van der Waals material-based nanomechanical resonators
Authors:
Myrron Albert C. Aguila,
Joshoua C. Esmenda,
Jyh-Yang Wang,
Teik-Hui Lee,
Yen-Chun Chen,
Chi-Yuan Yang,
Kung-Hsuan Lin,
Kuei-Shu Chang-Liao,
Sergey Kafanov,
Yuri A. Pashkin,
Chii-Dong Chen
Abstract:
Nanomechanical resonators made from van der Waals materials (vdW NMRs) provide a new tool for sensing absorbed laser power. The photothermal response of vdW NMRs, quantified from the resonant frequency shifts induced by optical absorption, is enhanced when incorporated in a Fabry-Perot (FP) interferometer. Along with the enhancement comes the dependence of the photothermal response on NMR displace…
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Nanomechanical resonators made from van der Waals materials (vdW NMRs) provide a new tool for sensing absorbed laser power. The photothermal response of vdW NMRs, quantified from the resonant frequency shifts induced by optical absorption, is enhanced when incorporated in a Fabry-Perot (FP) interferometer. Along with the enhancement comes the dependence of the photothermal response on NMR displacement, which lacks investigation. Here, we address the knowledge gap by studying electromotively driven niobium diselenide drumheads fabricated on highly reflective substrates. We use a FP-mediated absorptive heating model to explain the measured variations of the photothermal response. The model predicts a higher magnitude and tuning range of photothermal responses on few-layer and monolayer NbSe$_{2}$ drumheads, which outperform other clamped vdW drum-type NMRs at a laser wavelength of $532\,$nm. Further analysis of the model shows that both the magnitude and tuning range of NbSe$_{2}$ drumheads scale with thickness, establishing a displacement-based framework for building bolometers using FP-mediated vdW NMRs.
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Submitted 18 April, 2022;
originally announced April 2022.
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Machine learning predictions for local electronic properties of disordered correlated electron systems
Authors:
Yi-Hsuan Liu,
Sheng Zhang,
Puhan Zhang,
Ting-Kuo Lee,
Gia-Wei Chern
Abstract:
We present a scalable machine learning (ML) model to predict local electronic properties such as on-site electron number and double occupation for disordered correlated electron systems. Our approach is based on the locality principle, or the nearsightedness nature, of many-electron systems, which means local electronic properties depend mainly on the immediate environment. A ML model is developed…
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We present a scalable machine learning (ML) model to predict local electronic properties such as on-site electron number and double occupation for disordered correlated electron systems. Our approach is based on the locality principle, or the nearsightedness nature, of many-electron systems, which means local electronic properties depend mainly on the immediate environment. A ML model is developed to encode this complex dependence of local quantities on the neighborhood. We demonstrate our approach using the square-lattice Anderson-Hubbard model, which is a paradigmatic system for studying the interplay between Mott transition and Anderson localization. We develop a lattice descriptor based on group-theoretical method to represent the on-site random potentials within a finite region. The resultant feature variables are used as input to a multi-layer fully connected neural network, which is trained from datasets of variational Monte Carlo (VMC) simulations on small systems. We show that the ML predictions agree reasonably well with the VMC data. Our work underscores the promising potential of ML methods for multi-scale modeling of correlated electron systems.
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Submitted 12 April, 2022;
originally announced April 2022.
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Atomic-scale origin of the low grain-boundary resistance in perovskite solid electrolytes
Authors:
Tom Lee,
Ji Qi,
Chaitanya A. Gadre,
Huaixun Huyan,
Shu-Ting Ko,
Yunxing Zuo,
Chaojie Du,
Jie Li,
Toshihiro Aoki,
Caden John Stippich,
Ruqian Wu,
Jian Luo,
Shyue ** Ong,
Xiaoqing Pan
Abstract:
Oxide solid electrolytes (OSEs) have the potential to achieve improved safety and energy density for lithium-ion batteries, but their high grain-boundary (GB) resistance is a general bottleneck. In the most well studied perovskite OSE, Li3xLa2/3-xTiO3 (LLTO), the ionic conductivity of GBs is about three orders of magnitude lower than that of the bulk. In contrast, the related Li0.375Sr0.4375Ta0.75…
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Oxide solid electrolytes (OSEs) have the potential to achieve improved safety and energy density for lithium-ion batteries, but their high grain-boundary (GB) resistance is a general bottleneck. In the most well studied perovskite OSE, Li3xLa2/3-xTiO3 (LLTO), the ionic conductivity of GBs is about three orders of magnitude lower than that of the bulk. In contrast, the related Li0.375Sr0.4375Ta0.75Zr0.25O3 (LSTZ0.75) perovskite exhibits low GB resistance for reasons yet unknown. Here, we used aberration-corrected scanning transmission electron microscopy and spectroscopy, along with an active learning moment tensor potential, to reveal the atomic scale structure and composition of LSTZ0.75 GBs. Vibrational electron energy loss spectroscopy is applied for the first time to characterize the otherwise unmeasurable Li distribution in GBs of LSTZ0.75. We found that Li depletion, which is a major reason for the low GB ionic conductivity of LLTO, is absent for the GBs of LSTZ0.75. Instead, the low GB resistivity of LSTZ0.75 is attributed to the formation of a unique defective cubic perovskite interfacial structure that contained abundant vacancies. Our study provides insights into the atomic scale mechanisms of low GB resistivity and sheds light on possible paths for designing OSEs with high total ionic conductivity.
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Submitted 31 March, 2022;
originally announced April 2022.
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Generalized Dynamic Junction Theory to Resolve the Mechanism of Direct Current Generation in Liquid-Solid Interfaces
Authors:
Cristal Solares-Bockmon,
Aniqa Ibnat Lim,
Mohammadjavad Mohebinia,
Xinxin Xing,
Tian Tong,
Xingpeng Li,
Steven Baldelli,
T. R. Lee,
Wei Wang,
Zhao** Liu,
Jiming Bao
Abstract:
Despite the unsettled mechanism of electricity generation from the continuous flow of liquids on a surface, the charge-discharge theory has been widely accepted for alternating current (AC) generation from a moving droplet. It has been recently extended to rationalize direct current (DC) generation across a droplet moving between two different materials. By designing a reconfigurable contact betwe…
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Despite the unsettled mechanism of electricity generation from the continuous flow of liquids on a surface, the charge-discharge theory has been widely accepted for alternating current (AC) generation from a moving droplet. It has been recently extended to rationalize direct current (DC) generation across a droplet moving between two different materials. By designing a reconfigurable contact between a metal wire and a water droplet moving on graphene, we show that the charge-discharge theory cannot explain the reversal of current when water-metal interfaces switch from dynamic to static. All experiments can be described after we distinguish a dynamic from a static interface and generalize the photovoltaic-like effect to all dynamic junctions: excited electrons and holes in a moving interface will be separated and swept under the built-in electrical field, leading to a DC response. This generalized theory will lead to an understanding and the design of efficient electricity generation based on interfacial charge transfer.
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Submitted 16 March, 2022;
originally announced March 2022.
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Thermodynamic Driving Forces for Substrate Atom Extraction by Adsorption of Strong Electron Acceptor Molecules
Authors:
Paul Rhyan,
Philip James Blowey,
Billal S. Sohail,
Luke A. Rochford,
David A. Duncan,
Tien-Lin Lee,
Peter Starrs,
Giovanni Costantini,
Reinhard J. Maurer,
David Phillip Woodruff
Abstract:
A quantitative structural investigation is reported, aimed at resolving the issue of whether substrate adatoms are incorporated into the monolayers formed by strong molecular electron acceptors deposited onto metallic electrodes. A combination of normal-incidence X-ray standing waves, low energy electron diffraction, scanning tunnelling microscopy and X-ray photoelectron spectroscopy measurements…
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A quantitative structural investigation is reported, aimed at resolving the issue of whether substrate adatoms are incorporated into the monolayers formed by strong molecular electron acceptors deposited onto metallic electrodes. A combination of normal-incidence X-ray standing waves, low energy electron diffraction, scanning tunnelling microscopy and X-ray photoelectron spectroscopy measurements demonstrate that the systems TCNQ and F4TCNQ on Ag(100) lie at the boundary between these two possibilities and thus represent ideal model systems with which to study this effect. A room-temperature commensurate phase of adsorbed TCNQ is found not to involve Ag adatoms, but to adopt an inverted bowl configuration, long predicted but not previously identified experimentally. By contrast, a similar phase of adsorbed F4TCNQ does lead to Ag adatom incorporation in the overlayer, the cyano endgroups of the molecule being twisted relative to the planar quinoid ring. Density functional theory (DFT) calculations show that this behaviour is consistent with the adsorption energetics. Annealing of the commensurate TCNQ overlayer phase leads to an incommensurate phase that does appear to incorporate Ag adatoms. Our results indicate that the inclusion (or exclusion) of metal atoms into the organic monolayers is the result of both thermodynamic and kinetic factors.
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Submitted 15 March, 2022;
originally announced March 2022.
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Boron nitride on SiC(0001)
Authors:
You-Ron Lin,
Markus Franke,
Shayan Parhizkar,
Miriam Raths,
Victor Wen-zhe Yu,
Tien-Lin Lee,
Serguei Soubatch,
Volker Blum,
F. Stefan Tautz,
Christian Kumpf,
François C. Bocquet
Abstract:
In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional (2D) layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet, et al., Phys. Rev. Lett. 125,…
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In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional (2D) layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet, et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0$^\circ$ layer is aligned with the SiC lattice, and hence represents an important milestone towards high quality twisted bilayer graphene (tBLG), a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find -- in contrast to the literature -- that this template layer is a hexagonal B$_x$N$_y$ layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0$^\circ$ orientation of the B$_x$N$_y$ template layer upon annealing.
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Submitted 14 April, 2022; v1 submitted 2 March, 2022;
originally announced March 2022.
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Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen
Authors:
Judith Gabel,
Matthias Pickem,
Philipp Scheiderer,
Lenart Dudy,
Berengar Leikert,
Marius Fuchs,
Martin Stübinger,
Matthias Schmitt,
Julia Küspert,
Giorgio Sangiovanni,
Jan M. Tomczak,
Karsten Held,
Tien-Lin Lee,
Ralph Claessen,
Michael Sing
Abstract:
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that th…
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Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or -- mutatis mutandis -- the specific oxygen configuration imposed by a cap** layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit.
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Submitted 22 February, 2022;
originally announced February 2022.
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Evaluation of the Thermal Stability of TiW/Cu Heterojunctions Using a Combined SXPS and HAXPES Approach
Authors:
Curran Kalha,
Michael Reisinger,
Pardeep. K. Thakur,
Tien-Lin Lee,
Sriram Venkatesan,
Mark Isaacs,
Robert G. Palgrave,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of ti…
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Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of titanium when exposed to high temperatures ($\geq$400$^\circ$C). Here, the thermal stability of physical vapour deposited (PVD) TiW/Cu bilayer thin films in Si/SiO\textsubscript{2}(50~nm)/TiW(300~nm)/Cu(25~nm) stacks were characterised in response to annealing at 400$^\circ$C for 0.5~h and 5~h, using a combination of soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) and transmission electron microscopy (TEM). Results show that annealing promoted the segregation of titanium out of the TiW and interdiffusion into the copper metallisation. Titanium was shown be driven toward the free copper surface, accumulating there and forming a titanium oxide overlayer upon exposure to air. Annealing for longer timescales promoted a greater out-diffusion of titanium and a thicker oxide layer to grow on the copper surface. However, interface measurements suggest that the diffusion is not significant enough to compromise the barrier integrity and the TiW/Cu interface remains stable even after 5~h of annealing.
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Submitted 20 January, 2022;
originally announced January 2022.
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Site-specific surface atom valence band structure via X-ray standing wave excited photoemission
Authors:
Yanna Chen,
Leighton O. Jones,
Tien-Lin Lee,
Anusheela Das,
Martin A. Mosquera,
Denis T. Keane,
George C. Schatz,
Michael J. Bedzyk
Abstract:
X-ray standing wave (XSW) excited photoelectron emission was used to measure the site-specific valence band (VB) for 1/2 monolayer (ML) Pt grown on a SrTiO3 (001) surface. The XSW induced modulations in the core level (CL) and VB photoemission from the surface and substrate atoms were monitored for three hkl substrate Bragg reflections. The XSW CL analysis shows the Pt to have an fcc-like cube-on-…
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X-ray standing wave (XSW) excited photoelectron emission was used to measure the site-specific valence band (VB) for 1/2 monolayer (ML) Pt grown on a SrTiO3 (001) surface. The XSW induced modulations in the core level (CL) and VB photoemission from the surface and substrate atoms were monitored for three hkl substrate Bragg reflections. The XSW CL analysis shows the Pt to have an fcc-like cube-on-cube epitaxy with the substrate. The XSW VB information compares well to a density functional theory calculated projected density of states from the surface and substrate atoms. Overall, this work represents a novel method for determining the contribution to the density of states by valence electrons from specific atomic surface sites.
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Submitted 11 January, 2022;
originally announced January 2022.
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Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)
Authors:
You-Ron Lin,
Susanne Wolff,
Philip Schädlich,
Mark Hutter,
Serguei Soubatch,
Tien-Lin Lee,
F. Stefan Tautz,
Thomas Seyller,
Christian Kumpf,
François C. Bocquet
Abstract:
Using the normal incidence x-ray standing wave technique as well as low energy electron microscopy we have investigated the structure of quasi-freestanding monolayer graphene (QFMLG) obtained by intercalation of antimony under the $\left(6\sqrt{3}\times6\sqrt{3}\right)R30^\circ$ reconstructed graphitized 6H-SiC(0001) surface, also known as zeroth-layer graphene. We found that Sb intercalation deco…
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Using the normal incidence x-ray standing wave technique as well as low energy electron microscopy we have investigated the structure of quasi-freestanding monolayer graphene (QFMLG) obtained by intercalation of antimony under the $\left(6\sqrt{3}\times6\sqrt{3}\right)R30^\circ$ reconstructed graphitized 6H-SiC(0001) surface, also known as zeroth-layer graphene. We found that Sb intercalation decouples the QFMLG well from the substrate. The distance from the QFMLG to the Sb layer almost equals the expected van der Waals bonding distance of C and Sb. The Sb intercalation layer itself is mono-atomic, flat, and located much closer to the substrate, at almost the distance of a covalent Sb-Si bond length. All data is consistent with Sb located on top of the uppermost Si atoms of the SiC bulk.
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Submitted 19 September, 2022; v1 submitted 17 November, 2021;
originally announced November 2021.
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Mott domain walls: a (strongly) non-Fermi liquid state of matter
Authors:
Tsung-Han Lee,
J. Vučičević,
D. Tanasković,
E. Miranda,
V. Dobrosavljević
Abstract:
Most Mott systems display a low-temperature phase coexistence region around the metal-insulator transition. The domain walls separating the respective phases have very recently been observed both in simulations and in experiments, displaying unusual properties. First, they often cover a significant volume fraction, thus cannot be neglected. Second, they neither resemble a typical metal nor a stand…
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Most Mott systems display a low-temperature phase coexistence region around the metal-insulator transition. The domain walls separating the respective phases have very recently been observed both in simulations and in experiments, displaying unusual properties. First, they often cover a significant volume fraction, thus cannot be neglected. Second, they neither resemble a typical metal nor a standard insulator, displaying unfamiliar temperature dependence of (local) transport properties. Here we take a closer look at such domain wall matter by examining an appropriate unstable solution of the Hubbard model. We show that transport in this regime is dominated by the emergence of "resilient quasiparticles" displaying strong non-Fermi liquid features, reflecting the quantum-critical fluctuations in the vicinity of the Mott point.
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Submitted 4 October, 2022; v1 submitted 10 November, 2021;
originally announced November 2021.
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Direct experimental evidence for substrate adatom incorporation into a molecular overlayer
Authors:
Philip J. Mousley,
Luke A. Rochford,
Paul T. P. Ryan,
Phil J. Blowey,
James Lawrence,
David A. Duncan,
Hadeel Hussain,
Billal Sohail,
Tien-Lin Lee,
Gavin R. Bell,
Giovanni Costantini,
Reinhard J. Maurer,
Chris Nicklin,
D. Phil Woodruff
Abstract:
While the phenomenon of metal substrate adatom incorporation into molecular overlayers is generally believed to occur in several systems, the experimental evidence for this relies on the interpretation of scanning tunnelling microscopy (STM) images, which can be ambiguous and provides no quantitative structural information. We show that surface X-ray diffraction (SXRD) uniquely provides unambiguou…
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While the phenomenon of metal substrate adatom incorporation into molecular overlayers is generally believed to occur in several systems, the experimental evidence for this relies on the interpretation of scanning tunnelling microscopy (STM) images, which can be ambiguous and provides no quantitative structural information. We show that surface X-ray diffraction (SXRD) uniquely provides unambiguous identification of these metal adatoms. We present the results of a detailed structural study of the Au(111)-F4TCNQ system, combining surface characterisation by STM, low energy electron diffraction and soft X-ray photoelectron spectroscopy with quantitative experimental structural information from normal incidence X-ray standing waves (NIXSW) and SXRD, together with dispersion corrected density functional theory (DFT) calculations. Excellent agreement is found between the NIXSW data and the DFT calculations regarding the height and conformation of the adsorbed molecule, which has a twisted geometry rather than the previously supposed inverted bowl shape. SXRD measurements provide unequivocal evidence for the presence and location of Au adatoms, while the DFT calculations show this reconstruction to be strongly energetically favoured.
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Submitted 19 April, 2022; v1 submitted 10 November, 2021;
originally announced November 2021.
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Mem3DG: Modeling Membrane Mechanochemical Dynamics in 3D using Discrete Differential Geometry
Authors:
Cuncheng Zhu,
Christopher T. Lee,
Padmini Rangamani
Abstract:
Biomembranes adopt varying morphologies that are vital to cellular functions. Many studies use computational modeling to understand how various mechanochemical factors contribute to membrane shape transformations. Compared to approximation-based methods (e.g., finite element method), the class of discrete mesh models offers greater flexibility to simulate complex physics and shapes in three dimens…
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Biomembranes adopt varying morphologies that are vital to cellular functions. Many studies use computational modeling to understand how various mechanochemical factors contribute to membrane shape transformations. Compared to approximation-based methods (e.g., finite element method), the class of discrete mesh models offers greater flexibility to simulate complex physics and shapes in three dimensions; its formulation produces an efficient algorithm while maintaining coordinate-free geometric descriptions. However, ambiguities in geometric definitions in the discrete context have led to a lack of consensus on which discrete mesh model is theoretically and numerically optimal; a bijective relationship between the terms contributing to both the energy and forces from the discrete and smooth geometric theories remains to be established. We address this and present an extensible framework, $\texttt{Mem3DG}$, for modeling 3D mechanochemical dynamics of membranes based on Discrete Differential Geometry (DDG) on triangulated meshes. The formalism of DDG resolves the inconsistency and provides a unifying perspective on how to relate the smooth and discrete energy and forces. To demonstrate, $\texttt{Mem3DG}$ is used to model a sequence of examples with increasing mechanochemical complexity: recovering classical shape transformations such as 1) biconcave disk, dumbbell, and unduloid and 2) spherical bud on spherical, flat-patch membrane; investigating how the coupling of membrane mechanics with protein mobility jointly affects phase and shape transformation. As high-resolution 3D imaging of membrane ultrastructure becomes more readily available, we envision Mem3DG to be applied as an end-to-end tool to simulate realistic cell geometry under user-specified mechanochemical conditions.
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Submitted 31 October, 2021;
originally announced November 2021.
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Decomposition of high-rank factorized unitary coupled-cluster operators using ancilla and multi-qubit controlled low-rank counterparts
Authors:
Luogen Xu,
Joseph T. Lee,
J. K. Freericks
Abstract:
The factorized form of the unitary coupled-cluster approximation is one of the most promising methodologies to prepare trial states for strongly correlated systems within the variational quantum eigensolver framework. The factorized form of the UCC ansatz can be systematically applied to a reference state to generate the desired entanglement. The difficulty associated with such an approach is the…
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The factorized form of the unitary coupled-cluster approximation is one of the most promising methodologies to prepare trial states for strongly correlated systems within the variational quantum eigensolver framework. The factorized form of the UCC ansatz can be systematically applied to a reference state to generate the desired entanglement. The difficulty associated with such an approach is the requirement of simultaneously entangling a growing number of qubits, which quickly exceeds the hardware limitations of today's quantum machines. In particular, while circuits for singles and double excitations can be performed on current hardware, higher-rank excitations require too many gate operations. In this work, we propose a set of new schemes that trade off using extra qubits for a reduced gate depth to decompose high-rank UCC excitation operators into significantly lower depth circuits. These results will remain useful even when fault-tolerant machines are available to reduce the overall state-preparation circuit depth.
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Submitted 3 November, 2021;
originally announced November 2021.
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Hard x-ray angle-resolved photoemission from a buried high-mobility electron system
Authors:
Michael Zapf,
Matthias Schmitt,
Judith Gabel,
Philipp Scheiderer,
Martin Stübinger,
Berengar Leikert,
Giorgio Sangiovanni,
Lenart Dudy,
Sergii Chernov,
Sergey Babenkov,
Dmitry Vasilyev,
Olena Fedchenko,
Katerina Medjanik,
Yury Matveyev,
Andrei Gloskowski,
Christoph Schlueter,
Tien-Lin Lee,
Hans-Joachim Elmers,
Gerd Schönhense,
Michael Sing,
Ralph Claessen
Abstract:
Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by…
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Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively.
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Submitted 20 September, 2022; v1 submitted 28 October, 2021;
originally announced October 2021.
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Air Stable and Layer Dependent Ferromagnetism in Atomically Thin van der Waals CrPS$_{4}$
Authors:
Joolee Son,
Suhan Son,
Pyeongjae Park,
Maengsuk Kim,
Zui Tao,
Juhyun Oh,
Taehyeon Lee,
Sanghyun Lee,
Junghyun Kim,
Kaixuan Zhang,
Kwanghee Cho,
Takashi Kamiyama,
Jun Hee Lee,
Kin Fai Mak,
Jie Shan,
Miyoung Kim,
Je-Geun Park,
Jieun Lee
Abstract:
Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI$_{3}$, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of materi…
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Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI$_{3}$, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of material instability under air exposure. Here, we report the observation of an air stable and layer dependent ferromagnetic (FM) van der Waals crystal, CrPS$_{4}$, using magneto-optic Kerr effect microscopy. In contrast to the antiferromagnetic (AFM) bulk, the FM out-of-plane spin orientation is found in the monolayer crystal. Furthermore, alternating AFM and FM properties observed in even and odd layers suggest robust antiferromagnetic exchange interactions between layers. The observed ferromagnetism in these crystals remains resilient even after the air exposure of about a day, providing possibilities for the practical applications of van der Waals spintronics.
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Submitted 18 October, 2021;
originally announced October 2021.
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Lifetime effects and satellites in the photoelectron spectrum of tungsten metal
Authors:
Curran Kalha,
Laura E. Ratcliff,
Julio J. Gutiérrez Moreno,
Stephan Mohr,
Mervi Mantsinen,
Nathalie K. Fernando,
Pardeep K. Thakur,
Tien-Lin Lee,
Hsiang-Han Tseng,
Tim S. Nunney,
Juhan M. Kahk,
Johannes Lischner,
Anna Regoutz
Abstract:
Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, i…
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Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, in the case of metallic tungsten, open questions remain regarding the origin, nature, and position of satellite features that are prominent in the photoelectron spectrum. These satellites are a fingerprint of the electronic structure of the material and have not been thoroughly investigated, at times leading to their misinterpretation. The present work combines high-resolution soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) with reflection electron energy loss spectroscopy (REELS) and a multi-tiered ab-initio theoretical approach, including density functional theory (DFT) and many-body perturbation theory (G0W0 and GW+C), to disentangle the complex set of experimentally observed satellite features attributed to the generation of plasmons and interband transitions. This combined experiment-theory strategy is able to uncover previously undocumented satellite features, improving our understanding of their direct relationship to tungsten's electronic structure. Furthermore, it lays the groundwork for future studies into tungsten based mixed-metal systems and holds promise for the re-assessment of the photoelectron spectra of other transition and post-transition metals, where similar questions regarding satellite features remain.
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Submitted 10 September, 2021;
originally announced September 2021.
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Quantum fluctuations of charge order induce phonon softening in a superconducting cuprate
Authors:
H. Y. Huang,
A. Singh,
C. Y. Mou,
S. Johnston,
A. F. Kemper,
J. van den Brink,
P. J. Chen,
T. K. Lee,
J. Okamoto,
Y. Y. Chu,
J. H. Li,
S. Komiya,
A. C. Komarek,
A. Fujimori,
C. T. Chen,
D. J. Huang
Abstract:
Quantum phase transitions play an important role in sha** the phase diagram of high-temperature cuprate superconductors. These cuprates possess intertwined orders which interact strongly with superconductivity. However, the evidence for the quantum critical point associated with the charge order in the superconducting phase remains elusive. Here we show the short-range charge orders and the spec…
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Quantum phase transitions play an important role in sha** the phase diagram of high-temperature cuprate superconductors. These cuprates possess intertwined orders which interact strongly with superconductivity. However, the evidence for the quantum critical point associated with the charge order in the superconducting phase remains elusive. Here we show the short-range charge orders and the spectral signature of the quantum fluctuations in La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) near the optimal do** using high-resolution resonant inelastic X-ray scattering. On performing calculations through a diagrammatic framework, we discovered that the charge correlations significantly soften several branches of phonons. These results elucidate the role of charge order in the LSCO compound, providing evidence for quantum critical scaling and discommensurations associated with charge order.
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Submitted 26 September, 2021; v1 submitted 25 August, 2021;
originally announced August 2021.
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Optoelectrical nanomechanical resonators made from multilayered 2D materials
Authors:
Joshoua Condicion Esmenda,
Myrron Albert Callera Aguila,
Jyh-Yang Wang,
Teik-Hui Lee,
Yen-Chun Chen,
Chi-Yuan Yang,
Kung-Hsuan Lin,
Kuei-Shu Chang-Liao,
Sergey Kafanov,
Yuri Pashkin,
Chii-Dong Chen
Abstract:
Studies involving nanomechanical motion have evolved from its detection and understanding of its fundamental aspects to its promising practical utility as an integral component of hybrid systems. Nanomechanical resonators' indispensable role as transducers between optical and microwave fields in hybrid systems, such as quantum communications interface, have elevated their importance in recent year…
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Studies involving nanomechanical motion have evolved from its detection and understanding of its fundamental aspects to its promising practical utility as an integral component of hybrid systems. Nanomechanical resonators' indispensable role as transducers between optical and microwave fields in hybrid systems, such as quantum communications interface, have elevated their importance in recent years. It is therefore crucial to determine which among the family of nanomechanical resonators is more suitable for this role. Most of the studies revolve around nanomechanical resonators of ultrathin structures because of their inherently large mechanical amplitude due to their very low mass. Here, we argue that the underutilized nanomechanical resonators made from multilayered two-dimensional (2D) materials are the better fit for this role because of their comparable electrostatic tunability and larger optomechanical responsivity. To show this, we first demonstrate the electrostatic tunability of mechanical modes of a multilayered nanomechanical resonator made from graphite. We also show that the optomechanical responsivity of multilayered devices will always be superior as compared to the few-layer devices. Finally, by using the multilayered model and comparing this device with the reported ones, we find that the electrostatic tunability of devices of intermediate thickness is not significantly lower than that of ultrathin ones. Together with the practicality in terms of fabrication ease and design predictability, we contend that multilayered 2D nanomechanical resonators are the optimal choice for the electromagnetic interface in integrated quantum systems.
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Submitted 11 February, 2022; v1 submitted 19 August, 2021;
originally announced August 2021.
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Design and realization of topological Dirac fermions on a triangular lattice
Authors:
Maximilian Bauernfeind,
Jonas Erhardt,
Philipp Eck,
Pardeep K. Thakur,
Judith Gabel,
Tien-Lin Lee,
Jörg Schäfer,
Simon Moser,
Domenico Di Sante,
Ralph Claessen,
Giorgio Sangiovanni
Abstract:
Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band ordering and sizable band gaps is strong spin-orbit interaction. Following Kane and Mele's original suggestion, one approach is to synthesize monolayers of heavy atoms with honeycomb coordination accommodated on templates with…
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Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band ordering and sizable band gaps is strong spin-orbit interaction. Following Kane and Mele's original suggestion, one approach is to synthesize monolayers of heavy atoms with honeycomb coordination accommodated on templates with hexagonal symmetry. Yet, in the majority of cases, this recipe leads to triangular lattices, typically hosting metals or trivial insulators. Here, we conceive and realize "indenene", a triangular monolayer of indium on SiC exhibiting non-trivial valley physics driven by local spin-orbit coupling, which prevails over inversion-symmetry breaking terms. By means of tunneling microscopy of the 2D bulk we identify the quantum spin Hall phase of this triangular lattice and unveil how a hidden honeycomb connectivity emerges from interference patterns in Bloch $p_x \pm ip_y$-derived wave functions.
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Submitted 30 June, 2021;
originally announced June 2021.
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Quantum-embedding description of the Anderson lattice model with the ghost Gutzwiller Approximation
Authors:
Marius S. Frank,
Tsung-Han Lee,
Gargee Bhattacharyya,
Pak Ki Henry Tsang,
Victor L. Quito,
Vladimir Dobrosavljević,
Ove Christiansen,
Nicola Lanatà
Abstract:
We present benchmark calculations of the Anderson lattice model based on the recently-developed "ghost Gutzwiller approximation". Our analysis shows that, in some parameters regimes, the predictions of the standard Gutzwiller approximation can be incorrect by orders of magnitude for this model. We show that this is caused by the inability of this method to describe simultaneously the Mott physics…
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We present benchmark calculations of the Anderson lattice model based on the recently-developed "ghost Gutzwiller approximation". Our analysis shows that, in some parameters regimes, the predictions of the standard Gutzwiller approximation can be incorrect by orders of magnitude for this model. We show that this is caused by the inability of this method to describe simultaneously the Mott physics and the hybridization between correlated and itinerant degrees of freedom (whose interplay often governs the metal-insulator transition in real materials). Finally, we show that the ghost Gutzwiller approximation solves this problem, providing us with results in remarkable agreement with dynamical mean field theory throughout the entire phase diagram, while being much less computationally demanding. We provide an analytical explanation of these findings and discuss their implications within the context of ab-initio computation of strongly-correlated matter.
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Submitted 24 July, 2021; v1 submitted 10 June, 2021;
originally announced June 2021.
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Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching
Authors:
Soogil Lee,
Min-Gu Kang,
Dongwook Go,
Dohyoung Kim,
Jun-Ho Kang,
Taekhyeon Lee,
Geun-Hee Lee,
Nyun Jong Lee,
Sanghoon Kim,
Kab-** Kim,
Kyung-** Lee,
Byong-Guk Park
Abstract:
Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report t…
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Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report two effective methods of the conversion through spin-orbit coupling engineering, which allows us to unambiguously demonstrate orbital-current-induced spin torque, or orbital Hall torque. We find that orbital Hall torque is greatly enhanced by introducing either a rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, indicating that the orbital current generated in Cr is efficiently converted into spin current in the Gd or Pt layer. Furthermore, we show that the orbital Hall torque can facilitate the reduction of switching current of perpendicular magnetization in spin-orbit-torque-based spintronic devices.
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Submitted 3 May, 2022; v1 submitted 4 June, 2021;
originally announced June 2021.
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Fluctuation-dissipation Type Theorem in Stochastic Linear Learning
Authors:
Manhyung Han,
Jeonghyeok Park,
Taewoong Lee,
Jung Hoon Han
Abstract:
The fluctuation-dissipation theorem (FDT) is a simple yet powerful consequence of the first-order differential equation governing the dynamics of systems subject simultaneously to dissipative and stochastic forces. The linear learning dynamics, in which the input vector maps to the output vector by a linear matrix whose elements are the subject of learning, has a stochastic version closely mimicki…
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The fluctuation-dissipation theorem (FDT) is a simple yet powerful consequence of the first-order differential equation governing the dynamics of systems subject simultaneously to dissipative and stochastic forces. The linear learning dynamics, in which the input vector maps to the output vector by a linear matrix whose elements are the subject of learning, has a stochastic version closely mimicking the Langevin dynamics when a full-batch gradient descent scheme is replaced by that of stochastic gradient descent. We derive a generalized FDT for the stochastic linear learning dynamics and verify its validity among the well-known machine learning data sets such as MNIST, CIFAR-10 and EMNIST.
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Submitted 3 June, 2021;
originally announced June 2021.
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The Vertical Position of Sr Dopants in the Sr$_x$Bi$_2$Se$_3$ Superconductor
Authors:
You-Ron Lin,
Mahasweta Bagchi,
Serguei Soubatch,
Tien-Lin Lee,
Jens Brede,
François C. Bocquet,
Christian Kumpf,
Yoichi Ando,
F. Stefan Tautz
Abstract:
The discovery of topological superconductivity in doped Bi$_2$Se$_3$ made this class of materials highly important for the field of condensed matter physics. However, the structural origin of the superconducting state remained elusive, despite being investigated intensively in recent years. We use scanning tunneling microscopy and the normal incidence x-ray standing wave (NIXSW) technique in order…
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The discovery of topological superconductivity in doped Bi$_2$Se$_3$ made this class of materials highly important for the field of condensed matter physics. However, the structural origin of the superconducting state remained elusive, despite being investigated intensively in recent years. We use scanning tunneling microscopy and the normal incidence x-ray standing wave (NIXSW) technique in order to determine the vertical position of the dopants -- one of the key parameters for understanding topological superconductivity in this material -- for the case of Sr$_{x}$Bi$_2$Se$_3$. In a novel approach we analyze the NIXSW data in consideration of the inelastic mean free path of the photoemitted electrons, which allows us to distinguish between symmetry equivalent sites. We find that Sr-atoms are not situated inside the van der Waals gap between the Bi$_2$Se$_3$ quintuple layers but rather in the quintuple layer close to the outer Se planes.
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Submitted 31 May, 2021;
originally announced May 2021.
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Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole
Authors:
M. Chrysler,
J. Gabel,
T. -L. Lee,
A. N. Penn,
B. E. Matthews,
D. M. Kepaptsoglou,
Q. M. Ramasse,
J. R. Paudel,
R. K. Sah,
J. D. Grassi,
Z. Zhu,
A. X. Gray,
J. M. LeBeau,
S. R. Spurgeon,
S. A. Chambers,
P. V. Sushko,
J. H. Ngai
Abstract:
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipo…
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We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in electric fields, and change in band alignment are manifested in electrical transport and hard x-ray photoelectron spectroscopy measurements. Ab initio models reveal the interplay between polarization and band offsets. We find that band offsets can be tuned by modulating the density of space charge across the interface. Functionalizing the interface dipole to enable electrostatic altering of band alignment opens new pathways to realize novel behavior in semiconducting heterojunctions.
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Submitted 27 May, 2021;
originally announced May 2021.
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Hard X-ray photoemission spectroscopy of LaVO$_3$/SrTiO$_3$: Band alignment and electronic reconstruction
Authors:
M. Stübinger,
J. Gabel,
P. Scheiderer,
M. Zapf,
M. Schmitt,
P. Schütz,
B. Leikert,
J. Küspert,
M. Kamp,
P. K. Thakur,
T. -L. Lee,
P. Potapov,
A. Lubk,
B. Büchner,
M. Sing,
R. Claessen
Abstract:
The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer rema…
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The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer remarkable advantages over conventional solar cells. However, experimental data beyond the observation of a thickness-dependent metal-insulator transition is scarce and a profound, microscopic understanding of the electronic properties is still lacking. By means of soft and hard X-ray photoemission spectroscopy as well as resistivity and Hall effect measurements we study the electrical properties, band bending, and band alignment of LaVO$_3$/SrTiO$_3$ heterostructures. We find a critical LaVO$_3$ thickness of five unit cells, confinement of the conducting electrons to exclusively Ti 3$d$ states at the interface, and a potential gradient in the film. From these findings we conclude on electronic reconstruction as the driving mechanism for the formation of the metallic interface in LaVO$_3$/SrTiO$_3$.
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Submitted 26 May, 2021;
originally announced May 2021.
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Impact of Fe$_{80}$B$_{20}$ insertion on the properties of dual-MgO perpendicular magnetic tunnel junctions
Authors:
Enlong Liu,
Taeyoung Lee,
Hyunsoo Yang
Abstract:
We explore the impact of Fe80B20 inserted at both Co$_{20}$Fe$_{80}$B$_{20}$/MgO interfaces of dual-MgO free layers (FLs) in bottom-pinned magnetic tunnel junctions (MTJs). MTJ stacks are annealed for 30 min at 350 $^\circ$C and 400 $^\circ$C in a vacuum after film deposition. Current-in-plane tunneling measurements are carried out to characterize magnetotransport properties of the MTJs. Conventio…
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We explore the impact of Fe80B20 inserted at both Co$_{20}$Fe$_{80}$B$_{20}$/MgO interfaces of dual-MgO free layers (FLs) in bottom-pinned magnetic tunnel junctions (MTJs). MTJ stacks are annealed for 30 min at 350 $^\circ$C and 400 $^\circ$C in a vacuum after film deposition. Current-in-plane tunneling measurements are carried out to characterize magnetotransport properties of the MTJs. Conventional magnetometry measurements and ferromagnetic resonance are conducted to estimate the saturation magnetization, the effective perpendicular anisotropy field and the Gilbert dam** of dual-MgO FLs as a function of the Fe$_{80}$B$_{20}$ thickness and annealing temperatures. With ultrathin Fe$_{80}$B$_{20}$ (0.2 - 0.4 nm) inserted, perpendicular magnetic anisotropy (PMA) of FLs increases with similar tunnel magneto-resistance (TMR) and low dam** values. As Fe$_{80}$B$_{20}$ layer thickness further increases (0.6 - 1.2 nm), both TMR and PMA degrade, and dam** increases dramatically. This study demonstrates a novel approach to tune properties of MTJ stacks with dual-MgO FLs up to 400 $^\circ$C annealing, which enables MTJ stacks for various applications.
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Submitted 22 April, 2021;
originally announced April 2021.