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Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed
Authors:
Y. -T. Tsai,
C. -R. Liu,
Y. -T. Chen,
S. -M. Wang,
Z. -K. Chen,
C. -S. Pai,
Z. -R. Haung,
F. -S. Chang,
Z. -X. Li,
K. -Y. Hsiang,
M. -H. Lee,
Y. -T. Tang
Abstract:
In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain swi…
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In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain switching speed. However, no significant benefit was observed at electric fields less than 1 MV/cm. This is because at low voltage operation, the defective resistance (dead layer) within the interface prevents electron migration and the increased RC delay. Minimizing interface defects will be an important key to extending endurance and retention.
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Submitted 10 July, 2023;
originally announced July 2023.
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First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials
Authors:
S. -C. Lee,
Y. -T. Chen,
C. -R. Liu,
S. -M. Wang,
Y. -T. Tang,
F. -S. Chang,
Z. -X. Li,
K. -Y. Hsiang,
M. -H. Lee
Abstract:
Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the therma…
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Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.
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Submitted 1 June, 2023;
originally announced July 2023.
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Ultrafast Suppression of the Ferroelectric Instability in KTaO$_3$
Authors:
Viktor Krapivin,
Mingqiang Gu,
D. Hickox-Young,
S. W. Teitelbaum,
Y. Huang,
G. de la Peña,
D. Zhu,
N. Sirica,
M. -C. Lee,
R. P. Prasankumar,
A. Maznev,
K. A. Nelson,
M. Chollet,
James M. Rondinelli,
D. A. Reis,
M. Trigo
Abstract:
We use an x-ray free-electron laser to study the ultrafast lattice dynamics following above band-gap photoexcitation of the incipient ferroelectric potassium-tantalate, \kto. %
We use ultrafast near-UV (central wavelength 266\,nm and 50 fs pulse duration) laser light to photoexcite charge carriers across the gap and probe the ultrafast lattice dynamics by recording the x-ray diffuse intensity th…
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We use an x-ray free-electron laser to study the ultrafast lattice dynamics following above band-gap photoexcitation of the incipient ferroelectric potassium-tantalate, \kto. %
We use ultrafast near-UV (central wavelength 266\,nm and 50 fs pulse duration) laser light to photoexcite charge carriers across the gap and probe the ultrafast lattice dynamics by recording the x-ray diffuse intensity throughout multiple Brillouin zones using pulses from the Linac Coherent Light Source (LCLS) (central wavelength 1.3\,Å\, and $< 10$~fs pulse duration). We observe changes in the diffuse intensity that we conclude are associated with a hardening of the soft transverse optical and transverse acoustic phonon branches along $Γ$ to $X$ and $Γ$ to $M$. Using ground- and excited-state interatomic force constants from density functional theory (DFT) and assuming the phonon populations can be described by a time-dependent temperature, we fit the quasi-equilibrium thermal diffuse intensity to the experimental time-dependent intensity. We obtain the instantaneous lattice temperature and density of photoexcited charge carriers as a function of time delay. The DFT calculations demonstrate that photoexcitation transfers charge from oxygen $2p$ derived $π$-bonding orbitals to Ta $5d$ derived antibonding orbitals, further suppressing the ferroelectric instability and increasing the stability of the cubic, paraelectric structure.
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Submitted 26 January, 2022;
originally announced January 2022.
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Photocurrent-driven transient symmetry breaking in the Weyl semimetal TaAs
Authors:
N Sirica,
P. P. Orth,
M. S. Scheurer,
Y. M. Dai,
M. -C. Lee,
P. Padmanabhan,
L. T. Mix,
S. W. Teitelbaum,
M. Trigo,
L. X. Zhao,
G. F. Chen,
B. Xu,
R. Yang,
B. Shen,
C. Hu,
C. -C. Lee,
H. Lin,
T. A. Cochran,
S. A. Trugman,
J. -X. Zhu,
M. Z. Hasan,
N. Ni,
X. G. Qiu,
A. J. Taylor,
D. A. Yarotski
, et al. (1 additional authors not shown)
Abstract:
Symmetry plays a central role in conventional and topological phases of matter, making the ability to optically drive symmetry change a critical step in develo** future technologies that rely on such control. Topological materials, like the newly discovered topological semimetals, are particularly sensitive to a breaking or restoring of time-reversal and crystalline symmetries, which affect both…
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Symmetry plays a central role in conventional and topological phases of matter, making the ability to optically drive symmetry change a critical step in develo** future technologies that rely on such control. Topological materials, like the newly discovered topological semimetals, are particularly sensitive to a breaking or restoring of time-reversal and crystalline symmetries, which affect both bulk and surface electronic states. While previous studies have focused on controlling symmetry via coupling to the crystal lattice, we demonstrate here an all-electronic mechanism based on photocurrent generation. Using second-harmonic generation spectroscopy as a sensitive probe of symmetry change, we observe an ultrafast breaking of time-reversal and spatial symmetries following femtosecond optical excitation in the prototypical type-I Weyl semimetal TaAs. Our results show that optically driven photocurrents can be tailored to explicitly break electronic symmetry in a generic fashion, opening up the possibility of driving phase transitions between symmetry-protected states on ultrafast time scales.
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Submitted 9 November, 2021; v1 submitted 20 May, 2020;
originally announced May 2020.
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Valley-based FETs in graphene
Authors:
M. -K. Lee,
N. -Y. Lue,
Y. -C. Chen,
C. -K. Wen,
G. Y. Wu
Abstract:
An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the following correspondence to the spin FET: valley (K and K') \leftrightarrow spin (up and down…
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An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the following correspondence to the spin FET: valley (K and K') \leftrightarrow spin (up and down), armchair graphene nanoribbons \leftrightarrow ferromagnetic electrodes, graphene quantum wire \leftrightarrow semiconductor quantum wire, valley-orbit interaction \leftrightarrow Rashba spin-orbit interaction. The device works as follows. The source (drain) injects (detects) carriers in a specific valley polarization. A gate electric field is applied to the channel and modulates the valley polarization of carriers due to the valley-orbit interaction, thus controlling the amount of current collected at the drain. The valley FET is characterized by: i) smooth interfaces between electrodes and the channel, ii) strong valley-orbit interaction for electrical control of drain current, and iii) vanishing interband valley-flip scattering. By its analogy to the spin FET, the valley FET provides a potential framework to develop low-power FETs for graphene-based nanoelectronics.
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Submitted 27 December, 2012; v1 submitted 31 July, 2012;
originally announced August 2012.
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Reduction of high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor do**
Authors:
S. B. Lee,
A. Kim,
J. S. Lee,
S. H. Chang,
H. K. Yoo,
T. W. Noh,
B. Kahng,
M. -J. Lee,
C. J. Kim,
B. S. Kang
Abstract:
The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Do** with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, openin…
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The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Do** with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor do**, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease of Icomp by carrier do** could be a viable alternative for reducing IR in unipolar resistance switching.
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Submitted 6 March, 2010;
originally announced March 2010.
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Large 1/f noise of unipolar resistance switching and its percolating nature
Authors:
S. B. Lee,
S. Park,
J. S. Lee,
S. C. Chae,
S. H. Chang,
M. H. Jung,
Y. Jo,
B. Kahng,
B. S. Kang,
M. -J. Lee,
T. W. Noh
Abstract:
We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resist…
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We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resistance R with exponent w = 1.6. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices.
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Submitted 11 August, 2009;
originally announced August 2009.
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Exchange effects on electron scattering through a quantum dot embedded in a two-dimensional semiconductor structure
Authors:
L. K. Castelano,
G. -Q. Hai,
M. -T. Lee
Abstract:
We have developed a theoretical method to study scattering processes of an incident electron through an N-electron quantum dot (QD) embedded in a two-dimensional (2D) semiconductor. The generalized Lippmann-Schwinger equations including the electron-electron exchange interaction in this system are solved for the continuum electron by using the method of continued fractions (MCF) combined with 2D…
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We have developed a theoretical method to study scattering processes of an incident electron through an N-electron quantum dot (QD) embedded in a two-dimensional (2D) semiconductor. The generalized Lippmann-Schwinger equations including the electron-electron exchange interaction in this system are solved for the continuum electron by using the method of continued fractions (MCF) combined with 2D partial-wave expansion technique. The method is applied to a one-electron QD case. Cross-sections are obtained for both the singlet and triplet couplings between the incident electron and the QD electron during the scattering. The total elastic cross-sections as well as the spin-flip scattering cross-sections resulting from the exchange potential are presented. Furthermore, inelastic scattering processes are also studied using a multichannel formalism of the MCF.
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Submitted 19 November, 2007; v1 submitted 3 July, 2007;
originally announced July 2007.
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The structures and thermoelectric properties of the infinitely adaptive series (Bi2)m(Bi2Te3)n
Authors:
J. W. G. Bos,
H. W. Zandbergen,
M. -H. Lee,
N. P. Ong,
R. J. Cava
Abstract:
The structures and thermoelectric properties of the (Bi2)m(Bi2Te3)n homologous series, derived from stacking hexagonal Bi2 and Bi2Te3 blocks, are reported. The end-members of this series are metallic Bi and semiconducting Bi2Te3; nine members of the series have been studied. The structures form an infinitely adaptive series and a unified structural description based on a modulated structure appr…
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The structures and thermoelectric properties of the (Bi2)m(Bi2Te3)n homologous series, derived from stacking hexagonal Bi2 and Bi2Te3 blocks, are reported. The end-members of this series are metallic Bi and semiconducting Bi2Te3; nine members of the series have been studied. The structures form an infinitely adaptive series and a unified structural description based on a modulated structure approach is presented. The as-synthesized samples have thermopowers (S) that vary from n-type for Bi2Te3 to p-type for phases rich in Bi2 blocks but with some Bi2Te3 blocks present, to n-type again for Bi metal. The thermoelectric power factor (S2/rho) is highest for Bi metal (43 muW/K2 cm at 130 K), followed by Bi2Te3 (20 muW/K2 cm at 270 K), while Bi2Te (m:n = 5:2) and Bi7Te3 (m:n = 15:6) have 9 muW/K2 cm (at 240 K) and 11 muW/K2 (at 270 K), respectively. The results of do** studies with Sb and Se into Bi2Te are reported.
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Submitted 20 March, 2007;
originally announced March 2007.
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Ca_25Co_22O_56(OH)_28: a layered misfit compound
Authors:
T. Klimczuk,
H. W. Zandbergen,
N. M. van der Pers,
L. Viciu,
V. L. Miller,
M. -H. Lee,
R. J. Cava
Abstract:
The high pressure synthesis, structure and magnetic properties of Ca_25Co_22O_56(OH)_28 are reported. The compound has a misfit structure, consisting of double, square calcium oxide hydroxide rock-salt-like layers between hexagonal CoO_2 layers. The misfit compound crystallizes in the monoclinic space group C2/m, and can be characterized by the coexistence of two subsystems with common a=4.893(5…
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The high pressure synthesis, structure and magnetic properties of Ca_25Co_22O_56(OH)_28 are reported. The compound has a misfit structure, consisting of double, square calcium oxide hydroxide rock-salt-like layers between hexagonal CoO_2 layers. The misfit compound crystallizes in the monoclinic space group C2/m, and can be characterized by the coexistence of two subsystems with common a=4.893(5)A, c=8.825(9)A and b=95.745(8) parameters, and different b parameters: b_RS=4.894(5)A, and b_HEX=2.809(3)A, for the rock-salt and hexagonal type planes respectively. The compound shows Curie-Weiss paramagnetism with an antiferromagnetic Weiss temperature of -43K and a reduced Co moment. Substantial deviations from Curie-Weiss behavior are seen below 50K with no indication of magnetic ordering. No superconductivity was observed down to a temperature of 2K.
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Submitted 10 October, 2005; v1 submitted 6 October, 2005;
originally announced October 2005.
