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Phonon-pair-driven Ferroelectricity Causes Costless Domain-walls and Bulk-boundary Duality
Authors:
Hyun-Jae Lee,
Kyoung-June Go,
Pawan Kumar,
Chang Hoon Kim,
Yungyeom Kim,
Kyoungjun Lee,
Takao Shimizu,
Seung Chul Chae,
Hosub **,
Minseong Lee,
Umesh Waghmare,
Si-Young Choi,
Jun Hee Lee
Abstract:
Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles…
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Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles simulations unveil that the robust ferroelectricity is supported by bosonic pairing of all the anionic phonons in bulk HfO2. Strikingly, the paired phonons strongly bond with each other and successfully reach the center of the domain wall without losing their integrity and produce bulk-like domain walls. We then confirmed preservation of the bulk phonon displacements and consequently full revival of the bulk structure at domain walls via aberration-corrected STEM. The newly found duality between the bulk and the domain wall sheds light on previously enigmatic properties such as zero-energy domain walls, perfect Ising-type polar ordering, and exceptionally robust ferroelectricity at the sub-nm scales. The phonon-pairing discovered here is robust against physical boundaries such as domain walls and enables zero momentum and zero-energy cost local ferroelectric switching. This phenomenon demonstrated in Si-compatible ferroelectrics provides a novel technological platform where data storage on domain walls is as feasible as that within the domains, thereby expanding the potential for high-density data storage and advanced ferroelectric applications.
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Submitted 3 March, 2024;
originally announced March 2024.
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Why Do Animals Need Sha**? A Theory of Task Composition and Curriculum Learning
Authors:
** Hwa Lee,
Stefano Sarao Mannelli,
Andrew Saxe
Abstract:
Diverse studies in systems neuroscience begin with extended periods of curriculum training known as `sha**' procedures. These involve progressively studying component parts of more complex tasks, and can make the difference between learning a task quickly, slowly or not at all. Despite the importance of sha** to the acquisition of complex tasks, there is as yet no theory that can help guide th…
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Diverse studies in systems neuroscience begin with extended periods of curriculum training known as `sha**' procedures. These involve progressively studying component parts of more complex tasks, and can make the difference between learning a task quickly, slowly or not at all. Despite the importance of sha** to the acquisition of complex tasks, there is as yet no theory that can help guide the design of sha** procedures, or more fundamentally, provide insight into its key role in learning. Modern deep reinforcement learning systems might implicitly learn compositional primitives within their multilayer policy networks. Inspired by these models, we propose and analyse a model of deep policy gradient learning of simple compositional reinforcement learning tasks. Using the tools of statistical physics, we solve for exact learning dynamics and characterise different learning strategies including primitives pre-training, in which task primitives are studied individually before learning compositional tasks. We find a complex interplay between task complexity and the efficacy of sha** strategies. Overall, our theory provides an analytical understanding of the benefits of sha** in a class of compositional tasks and a quantitative account of how training protocols can disclose useful task primitives, ultimately yielding faster and more robust learning.
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Submitted 12 June, 2024; v1 submitted 28 February, 2024;
originally announced February 2024.
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Tunable incommensurability and spontaneous symmetry breaking in the reconstructed moiré-of-moiré lattices
Authors:
Daesung Park,
Changwon Park,
Eunjung Ko,
Kunihiro Yananose,
Rebecca Engelke,
Xi Zhang,
Konstantin Davydov,
Matthew Green,
Sang Hwa Park,
Jae Heon Lee,
Kenji Watanabe,
Takashi Taniguchi,
Sang Mo Yang,
Ke Wang,
Philip Kim,
Young-Woo Son,
Hyobin Yoo
Abstract:
Imposing incommensurable periodicity on the periodic atomic lattice can lead to complex structural phases consisting of locally periodic structure bounded by topological defects. Twisted trilayer graphene (TTG) is an ideal material platform to study the interplay between different atomic periodicities, which can be tuned by twist angles between the layers, leading to moiré-of-moiré lattices. Inter…
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Imposing incommensurable periodicity on the periodic atomic lattice can lead to complex structural phases consisting of locally periodic structure bounded by topological defects. Twisted trilayer graphene (TTG) is an ideal material platform to study the interplay between different atomic periodicities, which can be tuned by twist angles between the layers, leading to moiré-of-moiré lattices. Interlayer and intralayer interactions between two interfaces in TTG transform this moiré-of-moiré lattice into an intricate network of domain structures at small twist angles, which can harbor exotic electronic behaviors. Here we report a complete structural phase diagram of TTG with atomic scale lattice reconstruction. Using transmission electron microscopy combined with a new interatomic potential simulation, we show that a cornucopia of large-scale moiré lattices, ranging from triangular, kagome, and a corner-shared hexagram-shaped domain pattern, are present. For small twist angles below 0.1°, all domains are bounded by a network of two-dimensional domain wall lattices. In particular, in the limit of small twist angles, the competition between interlayer stacking energy and the formation of discommensurate domain walls leads to unique spontaneous symmetry breaking structures with nematic orders, suggesting the pivotal role of long-range interactions across entire layers. The diverse tessellation of distinct domains, whose topological network can be tuned by the adjustment of the twist angles, establishes TTG as a platform for exploring the interplay between emerging quantum properties and controllable nontrivial lattices.
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Submitted 24 February, 2024;
originally announced February 2024.
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An unconventional platform for two-dimensional Kagome flat bands on semiconductor surfaces
Authors:
Jae Hyuck Lee,
GwanWoo Kim,
Inkyung Song,
Ye** Kim,
Yeonjae Lee,
Sung Jong Yoo,
Deok-Yong Cho,
Jun-Won Rhim,
Jongkeun Jung,
Gunn Kim,
Changyoung Kim
Abstract:
In condensed matter physics, the Kagome lattice and its inherent flat bands have attracted considerable attention for their potential to host a variety of exotic physical phenomena. Despite extensive efforts to fabricate thin films of Kagome materials aimed at modulating the flat bands through electrostatic gating or strain manipulation, progress has been limited. Here, we report the observation o…
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In condensed matter physics, the Kagome lattice and its inherent flat bands have attracted considerable attention for their potential to host a variety of exotic physical phenomena. Despite extensive efforts to fabricate thin films of Kagome materials aimed at modulating the flat bands through electrostatic gating or strain manipulation, progress has been limited. Here, we report the observation of a novel $d$-orbital hybridized Kagome-derived flat band in Ag/Si(111) $\sqrt{3}\times\sqrt{3}$ as revealed by angle-resolved photoemission spectroscopy. Our findings indicate that silver atoms on a silicon substrate form a Kagome-like structure, where a delicate balance in the hop** parameters of the in-plane $d$-orbitals leads to destructive interference, resulting in a flat band. These results not only introduce a new platform for Kagome physics but also illuminate the potential for integrating metal-semiconductor interfaces into Kagome-related research, thereby opening a new avenue for exploring ideal two-dimensional Kagome systems.
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Submitted 30 December, 2023;
originally announced January 2024.
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Heat dissipation mechanisms in hybrid superconductor-semiconductor devices revealed by Joule spectroscopy
Authors:
Angel Ibabe,
Gorm O. Steffensen,
Ignacio Casal,
Mario Gomez,
Thomas Kanne,
Jesper Nygard,
Alfredo Levy Yeyati,
Eduardo J. H. Lee
Abstract:
Understanding heating and cooling mechanisms in mesoscopic superconductor-semiconductor hybrid devices is crucial for their application in quantum technologies. Owing to the poor thermal conductivity of typical devices, heating effects can drive superconducting-to-normal phase transitions even at low applied bias, observed as sharp conductance dips through the loss of Andreev excess currents. Trac…
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Understanding heating and cooling mechanisms in mesoscopic superconductor-semiconductor hybrid devices is crucial for their application in quantum technologies. Owing to the poor thermal conductivity of typical devices, heating effects can drive superconducting-to-normal phase transitions even at low applied bias, observed as sharp conductance dips through the loss of Andreev excess currents. Tracking such dips across magnetic field, cryostat temperature, and applied microwave power, which constitutes Joule spectroscopy, allows to uncover the underlying cooling bottlenecks in different parts of a device. By applying this technique, we analyze heat dissipation in devices based on full-shell InAs-Al nanowires and reveal that superconducting islands are strongly susceptible to heating as their cooling is limited by the rather inefficient electron-phonon coupling, as opposed to grounded superconductors that primarily cool by quasiparticle diffusion. Our measurements indicate that powers as low as 50-150 pW are able to fully suprpress the superconductivity of an island. Finally, we show that applied microwaves lead to similar heating effects as DC signals, and explore the interplay of the microwave frequency and the effective electron-phonon relaxation time.
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Submitted 22 November, 2023;
originally announced November 2023.
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Thermal Hall effects due to topological spin fluctuations in YMnO$_3$
Authors:
Ha-Leem Kim,
Takuma Saito,
Heejun Yang,
Hiroaki Ishizuka,
Matthew John Coak,
Jun Han Lee,
Hasung Sim,
Yoon Seok Oh,
Naoto Nagaosa,
Je-Geun Park
Abstract:
The thermal Hall effect in magnetic insulators has been considered a powerful method for examining the topological nature of charge-neutral quasiparticles such as magnons. Yet, unlike the kagome system, the triangular lattice has received less attention for studying the thermal Hall effect because the scalar spin chirality cancels out between adjacent triangles. However, such cancellation cannot b…
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The thermal Hall effect in magnetic insulators has been considered a powerful method for examining the topological nature of charge-neutral quasiparticles such as magnons. Yet, unlike the kagome system, the triangular lattice has received less attention for studying the thermal Hall effect because the scalar spin chirality cancels out between adjacent triangles. However, such cancellation cannot be perfect if the triangular lattice is distorted, which could open the possibility of a non-zero thermal Hall effect. Here, we report that the trimerized triangular lattice of multiferroic hexagonal manganite YMnO$_3$ produces a highly unusual thermal Hall effect due to topological spin fluctuations with the additional intricacy of a Dzyaloshinskii-Moriya interaction under an applied magnetic field. We conclude the thermal Hall conductivity arises from the system's topological nature of spin fluctuations. Our theoretical calculations demonstrate that the thermal Hall conductivity is also related in this material to the splitting of the otherwise degenerate two chiralities, left and right, of its 120$^{\circ}$ magnetic structure. Our result is one of the most unusual cases of topological physics due to this broken $Z_2$ symmetry of the chirality in the supposedly paramagnetic state of YMnO$_3$, with strong topological spin fluctuations. These new mechanisms in this important class of materials are crucial in exploring new thermal Hall physics and exotic excitations.
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Submitted 19 November, 2023;
originally announced November 2023.
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Linear scaling relationship of Néel temperature and dominant magnons in pyrochlore ruthenates
Authors:
Jae Hyuck Lee,
Dirk Wulferding,
Junkyoung Kim,
Dongjoon Song,
Seung Ryong Park,
Changyoung Kim
Abstract:
We present a systematic Raman spectroscopy study on a series of pyrochlore ruthenates, a system which is not yet clearly settled on its magnetic origin and structure. Apart from the Raman-active phonon modes, new peaks that appear in the energy range of 15 - 35 meV below the Néel temperature are assigned as one-magnon modes. The temperature evolution of one-magnon modes displays no significant the…
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We present a systematic Raman spectroscopy study on a series of pyrochlore ruthenates, a system which is not yet clearly settled on its magnetic origin and structure. Apart from the Raman-active phonon modes, new peaks that appear in the energy range of 15 - 35 meV below the Néel temperature are assigned as one-magnon modes. The temperature evolution of one-magnon modes displays no significant thermal dependence in mode frequencies while the intensities decrease monotonically. Remarkably, one-magnons from all compounds show similar characteristics with a single dominant peak at lower energy and weaker side peaks at a couple of meV higher energy. Most importantly, we uncover a striking proportionality between the dominant magnon mode energies and the Néel temperature values. Our results suggest the Ru ions may have similar or the same magnetic phase in all pyrochlore ruthenates of our study. We have thus found an avenue for directly tuning the magnetic exchange interaction by the selection of the $A$-site ion.
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Submitted 1 September, 2023; v1 submitted 18 April, 2023;
originally announced April 2023.
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Spin-phonon interactions and magnetoelectric coupling in Co$_4$$B_2$O$_9$ ($B$ = Nb, Ta)
Authors:
K. Park,
J. Kim,
S. Choi,
S. Fan,
C. Kim,
D. G. Oh,
N. Lee,
S. -W. Cheong,
V. Kiryukhin,
Y. J. Choi,
D. Vanderbilt,
J. H. Lee,
J. L. Musfeldt
Abstract:
In order to explore the consequences of spin-orbit coupling on spin-phonon interactions in a set of chemically-similar mixed metal oxides, we measured the infrared vibrational properties of Co$_4B_2$O$_9$ ($B$ = Nb, Ta) as a function of temperature and compared our findings with lattice dynamics calculations and several different models of spin-phonon coupling. Frequency vs. temperature trends for…
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In order to explore the consequences of spin-orbit coupling on spin-phonon interactions in a set of chemically-similar mixed metal oxides, we measured the infrared vibrational properties of Co$_4B_2$O$_9$ ($B$ = Nb, Ta) as a function of temperature and compared our findings with lattice dynamics calculations and several different models of spin-phonon coupling. Frequency vs. temperature trends for the Co$^{2+}$ shearing mode near 150 cm$^{-1}$ reveal significant shifts across the magnetic ordering temperature that are especially large in relative terms. Bringing these results together and accounting for noncollinearity, we obtain spin-phonon coupling constants of -3.4 and -4.3 cm$^{-1}$ for Co$_4$Nb$_2$O$_9$ and the Ta analog, respectively. Analysis reveals that these coupling constants derive from interlayer (rather than intralayer) exchange interactions and that the interlayer interactions contain competing antiferromagnetic and ferromagnetic contributions. At the same time, beyond-Heisenberg terms are minimized due to fortuitous symmetry considerations, different than most other 4$d$- and 5$d$-containing oxides. Comparison with other contemporary oxides shows that spin-phonon coupling in this family of materials is among the strongest ever reported, suggesting an origin for magnetoelectric coupling.
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Submitted 10 April, 2023;
originally announced April 2023.
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Joule spectroscopy of hybrid superconductor-semiconductor nanodevices
Authors:
Angel Ibabe,
Mario Gomez,
Gorm O. Steffensen,
Thomas Kanne,
Jesper Nygard,
Alfredo Levy Yeyati,
Eduardo J. H. Lee
Abstract:
Hybrid superconductor-semiconductor devices offer highly tunable platforms, potentially suitable for quantum technology applications, that have been intensively studied in the past decade. Here we establish that measurements of the superconductor-to-normal transition originating from Joule heating provide a powerful spectroscopical tool to characterize such hybrid devices. Concretely, we apply thi…
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Hybrid superconductor-semiconductor devices offer highly tunable platforms, potentially suitable for quantum technology applications, that have been intensively studied in the past decade. Here we establish that measurements of the superconductor-to-normal transition originating from Joule heating provide a powerful spectroscopical tool to characterize such hybrid devices. Concretely, we apply this technique to junctions in full-shell Al-InAs nanowires in the Little-Parks regime and obtain detailed information of each lead independently and in a single measurement, including differences in the superconducting coherence lengths of the leads, inhomogeneous covering of the epitaxial shell, and the inverse superconducting proximity effect; all-in-all constituting a unique fingerprint of each device and highlighting the large variability present in these systems. Besides the practical uses, our work also underscores the importance of heating in hybrid devices, an effect that is often overlooked.
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Submitted 2 October, 2022;
originally announced October 2022.
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Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain
Authors:
Jun Han Lee,
Nguyen Xuan Duong,
Min-Hyoung Jung,
Hyun-Jae Lee,
Ahyoung Kim,
Youngki Yeo,
Junhyung Kim,
Gye-Hyeon Kim,
Byeong-Gwan Cho,
Jaegyu Kim,
Furqan Ul Hassan Naqvi,
Jong-Seong Bae,
Jeehoon Kim,
Chang Won Ahn,
Young-Min Kim,
Tae Kwon Song,
Jae-Hyeon Ko,
Tae-Yeong Koo,
Changhee Sohn,
Kibog Park,
Chan-Ho Yang,
Sang Mo Yang,
Jun Hee Lee,
Hu Young Jeong,
Tae Heon Kim
, et al. (1 additional authors not shown)
Abstract:
Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroe…
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Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO$_{3}$, which boosts square-tensile-strain to BaTiO$_{3}$ and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti$^{3+}$ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.
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Submitted 12 September, 2022;
originally announced September 2022.
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Significant thermal Hall effect in the 3$d$ cobalt Kitaev system $Na_2Co_2TeO_6$
Authors:
Heejun Yang,
Chaebin Kim,
Ysun Choi,
Jun Han Lee,
Gaoting Lin,
Jie Ma,
Marie Kratochvílová,
Petr Proschek,
Eun-Gook Moon,
Ki Hoon Lee,
Yoon Seok Oh,
Je-Geun Park
Abstract:
Kitaev physics has recently attracted attention in condensed matter for its anticipated novel quantum spin liquid state. The thermal transport measurement is crucial for probing the novel features of charge-neutral quasiparticles. In this letter, we report a significant thermal Hall effect in $Na_2Co_2TeO_6$ (NCTO), a Kitaev quantum spin liquid candidate, when the magnetic field is applied along t…
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Kitaev physics has recently attracted attention in condensed matter for its anticipated novel quantum spin liquid state. The thermal transport measurement is crucial for probing the novel features of charge-neutral quasiparticles. In this letter, we report a significant thermal Hall effect in $Na_2Co_2TeO_6$ (NCTO), a Kitaev quantum spin liquid candidate, when the magnetic field is applied along the out-of-plane direction of the honeycomb plane. The thermal conductivity ($κ_{xx}$) and thermal Hall conductivity ($κ_{xy}$) in NCTO reveal distinct magnetic field dependences below and above the Neel temperature ($T_N$) of 27 K. For $T>T_N$, $κ_{xx}$ has a monotonic decrease in the field dependence, while $κ_{xy}$ persists up to $T^*$ = 150 K. On the other hand, both $κ_{xx}$ and $κ_{xy}$ exhibit complex field dependence for $T<T_N$.
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Submitted 25 August, 2022; v1 submitted 3 August, 2022;
originally announced August 2022.
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Pressure-dependent structure of BaZrO$_3$ crystals as determined by Raman Spectroscopy
Authors:
Dong-Hyeon Gim,
Yeahan Sur,
Yoon Han Lee,
Jeong Hyuk Lee,
Soonjae Moon,
Yoon Seok Oh,
Kee Hoon Kim
Abstract:
The structure of dielectric perovskite BaZrO$_3$, long known to be cubic at room temperature without any structural phase transition with variation of temperature, has been recently disputed to have different ground state structures with lower symmetries involving octahedra rotation. The pressure-dependent Raman scattering measurements can identify the hierarchy of energetically-adjacent polymorph…
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The structure of dielectric perovskite BaZrO$_3$, long known to be cubic at room temperature without any structural phase transition with variation of temperature, has been recently disputed to have different ground state structures with lower symmetries involving octahedra rotation. The pressure-dependent Raman scattering measurements can identify the hierarchy of energetically-adjacent polymorphs, hel** in turn understand its ground state structure at atmospheric pressure. Here, Raman scattering spectra of high-quality BaZrO$_3$ single crystals grown by the optical floating zone method are investigated in a pressure range from 1 atm to 42 GPa. First, based on the analyses of the infrared and Raman spectra measured at the atmosphere, it is found that all observed vibrational modes can be assigned according to the cubic $Pm\bar{3}m$ structure. In addition, by applying pressure, two structural phase transitions are found at 8.4 and 19.2 GPa, one from the cubic to the rhombohedral $R\bar{3}c$ phase and the other from the rhombohedral to the tetragonal $I4/mcm$ phase. Based on the two pressure-induced structural phase transitions, the true ground state structure of BaZrO$_3$ at room temperature and ambient pressure is corroborated to be cubic while the rhombohedral phase is the closest second.
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Submitted 28 June, 2022;
originally announced June 2022.
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Diagonal and off-diagonal thermal conduction with resonant phonon scattering in $Ni_3TeO_6$
Authors:
Heejun Yang,
Xianghan Xu,
Jun Han Lee,
Yoon Seok Oh,
Sang-Wook Cheong,
Je-Geun Park
Abstract:
The coupling between phonon and magnon is ubiquitous in magnetic materials and plays a crucial role in many aspects of magnetic properties, most notably in spintronics. Yet, this academically and technologically interesting problem still poses a severe challenge to a general understanding of the issue in certain materials. We report that Ni3TeO6 exhibits clear evidence of significant magnon-phonon…
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The coupling between phonon and magnon is ubiquitous in magnetic materials and plays a crucial role in many aspects of magnetic properties, most notably in spintronics. Yet, this academically and technologically interesting problem still poses a severe challenge to a general understanding of the issue in certain materials. We report that Ni3TeO6 exhibits clear evidence of significant magnon-phonon coupling in both longitudinal thermal conductivity ($κ_{xx}$) and thermal Hall coefficient ($κ_{xy}$). The Debye-Callaway model, a phenomenological description for phonon heat conduction, can explain the measured magnetic field dependence of $κ_{xx}(H)$: phonon scattering from spin fluctuation in the paramagnetic phase and additional scattering due to magnon-phonon coupling in the collinear antiferromagnetic phase. We further suggest that a similar approach could be applied to understand the finite $κ_{xy}$ values in $Ni_3TeO_6$.
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Submitted 6 October, 2022; v1 submitted 1 June, 2022;
originally announced June 2022.
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Collective magnetic Higgs excitation in a pyrochlore ruthenate
Authors:
Dirk Wulferding,
Junkyeong Kim,
Mi Kyung Kim,
Yang Yang,
Jae Hyuck Lee,
Dongjoon Song,
Dong** Oh,
Heung-Sik Kim,
Li Ern Chern,
Yong Baek Kim,
Minji Noh,
Hyunyong Choi,
Sungkyun Choi,
Natalia B. Perkins,
Changyoung Kim,
Seung Ryong Park
Abstract:
The emergence of scalar Higgs-type amplitude modes in systems where symmetry is spontaneously broken has been a highly successful, paradigmatic description of phase transitions, with implications ranging from high-energy particle physics to low-energy condensed matter systems. Here, we uncover two successive high temperature phase transitions in the pyrochlore magnet Nd$_2$Ru$_2$O$_7$ at…
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The emergence of scalar Higgs-type amplitude modes in systems where symmetry is spontaneously broken has been a highly successful, paradigmatic description of phase transitions, with implications ranging from high-energy particle physics to low-energy condensed matter systems. Here, we uncover two successive high temperature phase transitions in the pyrochlore magnet Nd$_2$Ru$_2$O$_7$ at $T_{\mathrm{N}} = 147$ K and $T^* = 97$ K, that lead to giant phonon instabilities and culminate in the emergence of a highly coherent excitation. This coherent excitation, distinct from other phonons and from conventional magnetic modes, stabilizes at a low energy of 3 meV. We assign it to a collective Higgs-type amplitude mode, that involves bond energy modulations of the Ru$_4$ tetrahedra. Its striking two-fold symmetry, incompatible with the underlying crystal structure, highlights the possibility of multiple entangled broken symmetries.
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Submitted 23 July, 2023; v1 submitted 26 April, 2022;
originally announced April 2022.
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Persistence of Ising-like easy-axis spin correlations in the paramagnetic state of the spin-1 chain compound NiTe$_2$O$_5$
Authors:
Seung-Ho Baek,
Jun Han Lee,
Yoon Seok Oh,
Kwang-Yong Choi,
Bernd Büchner
Abstract:
A $^{125}$Te nuclear magnetic resonance (NMR) study was carried out in the paramagnetic state of the recently discovered quasi-one-dimensional spin-1 chain compound NiTe$_2$O$_5$. We observed that the $^{125}$Te NMR spectrum splits into two in a magnetic field applied along the $c$ axis. Based on the strong temperature variation of the relative intensity ratio of the split lines, we infer that the…
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A $^{125}$Te nuclear magnetic resonance (NMR) study was carried out in the paramagnetic state of the recently discovered quasi-one-dimensional spin-1 chain compound NiTe$_2$O$_5$. We observed that the $^{125}$Te NMR spectrum splits into two in a magnetic field applied along the $c$ axis. Based on the strong temperature variation of the relative intensity ratio of the split lines, we infer that the line splitting arises from the two sublattice susceptibilities induced in opposite directions along the chains. In great support of this interpretation, a quantitative analysis of the spin-lattice relaxation rate $T_1^{-1}$ and the Knight shift data unravels dominant transverse spin fluctuations. We conclude that Ising-like uniaxial spin correlations persist up to surprisingly high temperatures compared to the exchange energy scales. Spin-charge coupling mechanism via a self-do** effect may be important.
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Submitted 27 December, 2021;
originally announced December 2021.
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Air Stable and Layer Dependent Ferromagnetism in Atomically Thin van der Waals CrPS$_{4}$
Authors:
Joolee Son,
Suhan Son,
Pyeongjae Park,
Maengsuk Kim,
Zui Tao,
Juhyun Oh,
Taehyeon Lee,
Sanghyun Lee,
Junghyun Kim,
Kaixuan Zhang,
Kwanghee Cho,
Takashi Kamiyama,
Jun Hee Lee,
Kin Fai Mak,
Jie Shan,
Miyoung Kim,
Je-Geun Park,
Jieun Lee
Abstract:
Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI$_{3}$, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of materi…
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Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI$_{3}$, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of material instability under air exposure. Here, we report the observation of an air stable and layer dependent ferromagnetic (FM) van der Waals crystal, CrPS$_{4}$, using magneto-optic Kerr effect microscopy. In contrast to the antiferromagnetic (AFM) bulk, the FM out-of-plane spin orientation is found in the monolayer crystal. Furthermore, alternating AFM and FM properties observed in even and odd layers suggest robust antiferromagnetic exchange interactions between layers. The observed ferromagnetism in these crystals remains resilient even after the air exposure of about a day, providing possibilities for the practical applications of van der Waals spintronics.
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Submitted 18 October, 2021;
originally announced October 2021.
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Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$
Authors:
** Hong Lee,
Takayuki Harada,
Felix Trier,
Lourdes Marcano,
Florian Godel,
Sergio Valencia,
Atsushi Tsukazaki,
Manuel Bibes
Abstract:
Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivitie…
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Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV Å and argue that our results qualify delafossites as a new family of oxides for nano-spintronics and spin-orbitronics, beyond perovskite materials.
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Submitted 29 September, 2021;
originally announced September 2021.
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Modulating Curie Temperature and Magnetic Anisotropy in Nanoscale Layered Cr_{2}Te_{3} Films: Implications for Room-Temperature Spintronics
Authors:
In Hak Lee,
Byoung Ki Choi,
Hyuk ** Kim,
Min Jay Kim,
Hu Young Jeong,
Jong Hoon Lee,
Seung-Young Park,
Younghun Jo,
Chanki Lee,
Jun Woo Choi,
Seong Won Cho,
Suyuon Lee,
Younghak Kim,
Beom Hyun Kim,
Kyeong Jun Lee,
** Eun Heo,
Seo Hyoung Chang,
Feng** Li,
Bheema Lingam Chittari,
Jeil Jung,
Young Jun Chang
Abstract:
Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}…
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Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}) and magnetic anisotropy during growth of ultrathin Cr_{2}Te_{3} films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_{2}Te_{3} films as candidates for develo** room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds.
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Submitted 5 April, 2021;
originally announced April 2021.
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arXiv:2102.02644
[pdf]
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.str-el
cond-mat.supr-con
quant-ph
The 2021 Quantum Materials Roadmap
Authors:
Feliciano Giustino,
** Hong Lee,
Felix Trier,
Manuel Bibes,
Stephen M Winter,
Roser Valentí,
Young-Woo Son,
Louis Taillefer,
Christoph Heil,
Adriana I. Figueroa,
Bernard Plaçais,
QuanSheng Wu,
Oleg V. Yazyev,
Erik P. A. M. Bakkers,
Jesper Nygård,
Pol Forn-Diaz,
Silvano De Franceschi,
J. W. McIver,
L. E. F. Foa Torres,
Tony Low,
Anshuman Kumar,
Regina Galceran,
Sergio O. Valenzuela,
Marius V. Costache,
Aurélien Manchon
, et al. (4 additional authors not shown)
Abstract:
In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi…
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In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to sha** a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.
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Submitted 4 February, 2021;
originally announced February 2021.
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Strong pinning at high growth rates in Rare Earth Barium Cuprate
Authors:
J. Feighan,
M. H. Lai,
A. Kursumovic,
D. Zhang,
H. Wang,
J. H. Lee,
S Moon,
J. L. MacManus-Driscoll
Abstract:
We present a simple liquid assisted processing (LAP) method, to be used in-situ during pulsed laser deposition growth to give both rapid growth rates (50 Hz deposition leading to >250 nm/min with a single plume) and strong pinning (improved x 5-10 over plain standard YBCO films grown at similar rates). Achieving these two important features simultaneously has been a serious bottleneck to date. LAP…
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We present a simple liquid assisted processing (LAP) method, to be used in-situ during pulsed laser deposition growth to give both rapid growth rates (50 Hz deposition leading to >250 nm/min with a single plume) and strong pinning (improved x 5-10 over plain standard YBCO films grown at similar rates). Achieving these two important features simultaneously has been a serious bottleneck to date. LAP enhances the kinetics of the film growth so that good crystalline perfection can be achieved at up to 60 x faster growth rates than normal, while also enabling artificial pinning centres to be self assembled into fine nanocolumns. In addition, LAP allows for RE mixing (80% of Y with 20% of Yb, Sm, or Yb+Sm), creating effective point-like disorder within the REBCO lattice and which leads to strongly improved pinning at 30 K and below. Overall, LAP is a simple method which could be adopted by other in-situ physical or vapour deposition methods (i.e PLD, MOCVD, evaporation, etc) to significantly enhance both growth rate and performance.
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Submitted 16 November, 2020; v1 submitted 2 November, 2020;
originally announced November 2020.
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Nanoscale-confined Terahertz Polaritons in a van der Waals Crystal
Authors:
Thales V. A. G. de Oliveira,
Tobias Nörenberg,
Gonzalo Álvarez-Pérez,
Lukas Wehmeier,
Javier Taboada-Gutiérrez,
Maximilian Obst,
Franz Hempel,
Eduardo J. H. Lee,
John M. Klopf,
Ion Errea,
Alexey Y. Nikitin,
Susanne C. Kehr,
Pablo Alonso-Gonzaléz,
Lukas M. Eng
Abstract:
Electromagnetic field confinement is crucial for nanophotonic technologies, since it allows for enhancing light-matter interactions, thus enabling light manipulation in deep sub-wavelength scales. In the terahertz (THz) spectral range, radiation confinement is conventionally achieved with specially designed metallic structures - such as antennas or nanoslits - with large footprints due to the rath…
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Electromagnetic field confinement is crucial for nanophotonic technologies, since it allows for enhancing light-matter interactions, thus enabling light manipulation in deep sub-wavelength scales. In the terahertz (THz) spectral range, radiation confinement is conventionally achieved with specially designed metallic structures - such as antennas or nanoslits - with large footprints due to the rather long wavelengths of THz radiation. In this context, phonon polaritons - light coupled to lattice vibrations - in van der Waals (vdW) crystals have emerged as a promising solution for controlling light beyond the diffraction limit, as they feature extreme field confinements and low optical losses. However, experimental demonstration of nanoscale-confined phonon polaritons at THz frequencies has so far remained elusive. Here, we provide it by employing scattering-type scanning near-field optical microscopy (s-SNOM) combined with a free-electron laser (FEL) to reveal a range of low-loss polaritonic excitations at frequencies from 8 to 12 THz in the vdW semiconductor $α-MoO_3$. We visualize THz polaritons with i) in-plane hyperbolic dispersion, ii) extreme nanoscale field confinement (below $λ_o/75$) and iii) long polariton lifetimes, with a lower limit of > 2 ps.
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Submitted 11 November, 2020; v1 submitted 13 July, 2020;
originally announced July 2020.
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Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects
Authors:
Eoin Griffin,
Lucas Mogg,
Guang-** Hao,
Gopinadhan Kalon,
Cihan Bacaksiz,
Guillermo Lopez-Polin,
T. Y. Zhou,
Victor Guarochico,
Junhao Cai,
Christof Neumann,
Andreas Winter,
Michael Mohn,
Jong Hak Lee,
Junhao Lin,
Ute Kaiser,
Irina V. Grigorieva,
Kazu Suenaga,
Barbaros Ozyilmaz,
Hui-Min Cheng,
Wencai Ren,
Andrey Turchanin,
Francois M. Peeters,
Andre K. Geim,
Marcelo Lozada-Hidalgo
Abstract:
Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experi…
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Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.
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Submitted 20 May, 2020; v1 submitted 19 May, 2020;
originally announced May 2020.
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Integrable Kondo problems
Authors:
Davide Gaiotto,
Ji Hoon Lee,
**gxiang Wu
Abstract:
We discuss the integrability and wall-crossing properties of Kondo problems, where an 1d impurity is coupled to a 2d chiral CFT and triggers a defect RG flow. We review several new and old examples inspired by constructions in four-dimensional Chern-Simons theory and by affine Gaudin models.
We discuss the integrability and wall-crossing properties of Kondo problems, where an 1d impurity is coupled to a 2d chiral CFT and triggers a defect RG flow. We review several new and old examples inspired by constructions in four-dimensional Chern-Simons theory and by affine Gaudin models.
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Submitted 3 February, 2021; v1 submitted 14 March, 2020;
originally announced March 2020.
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From Andreev to Majorana bound states in hybrid superconductor-semiconductor nanowires
Authors:
Elsa Prada,
Pablo San-Jose,
Michiel W. A. de Moor,
Attila Geresdi,
Eduardo J. H. Lee,
Jelena Klinovaja,
Daniel Loss,
Jesper Nygård,
Ramón Aguado,
Leo P. Kouwenhoven
Abstract:
Electronic excitations above the ground state must overcome an energy gap in superconductors with spatially-homogeneous s-wave pairing. In contrast, inhomogeneous superconductors such as those with magnetic impurities or weak links, or heterojunctions containing normal metals or quantum dots, can host subgap electronic excitations that are generically known as Andreev bound states (ABSs). With the…
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Electronic excitations above the ground state must overcome an energy gap in superconductors with spatially-homogeneous s-wave pairing. In contrast, inhomogeneous superconductors such as those with magnetic impurities or weak links, or heterojunctions containing normal metals or quantum dots, can host subgap electronic excitations that are generically known as Andreev bound states (ABSs). With the advent of topological superconductivity, a new kind of ABS with exotic qualities, known as Majorana bound state (MBS), has been discovered. We review the main properties of ABSs and MBSs, and the state-of-the-art techniques for their detection. We focus on hybrid superconductor-semiconductor nanowires, possibly coupled to quantum dots, as one of the most flexible and promising experimental platforms. We discuss how the combined effect of spin-orbit coupling and Zeeman field in these wires triggers the transition from ABSs into MBSs. We show theoretical progress beyond minimal models in understanding experiments, including the possibility of different types of robust zero modes that may emerge without a band-topological transition. We examine the role of spatial non-locality, a special property of MBS wavefunctions that, together with non-Abelian braiding, is the key to realizing topological quantum computation.
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Submitted 4 October, 2020; v1 submitted 11 November, 2019;
originally announced November 2019.
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Unconventional critical behavior in quasi-one-dimensional $S$ = 1 chain NiTe$_{2}$O$_{5}$
Authors:
Jun Han Lee,
Marie Kratochvílová,
Huibo Cao,
Zahra Yamani,
J. S. Kim,
Je-Geun Park,
G. R. Stewart,
Yoon Seok Oh
Abstract:
Here we report a new quasi-one-dimensional $S$ = 1 chain compound NiTe$_{2}$O$_{5}$. From the comprehensive study of the structure and magnetic properties on high quality single crystalline NiTe$_{2}$O$_{5}$, it's revealed that NiTe$_{2}$O$_{5}$ undergoes a transition into an intriguing long-range antiferromagnetic order at $T_{\rm N}=30.5 {\rm K}$, in which longitudinal magnetic moments along the…
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Here we report a new quasi-one-dimensional $S$ = 1 chain compound NiTe$_{2}$O$_{5}$. From the comprehensive study of the structure and magnetic properties on high quality single crystalline NiTe$_{2}$O$_{5}$, it's revealed that NiTe$_{2}$O$_{5}$ undergoes a transition into an intriguing long-range antiferromagnetic order at $T_{\rm N}=30.5 {\rm K}$, in which longitudinal magnetic moments along the chain direction are ferromagnetically ordered, while their transverse components have an alternating ferromagnetic-antiferromagnetic coupling. Even though the temperature dependence of magnetic susceptibility represents an archetypal anisotropic antiferromagnetic order, we found that critical behavior of unconventional nature with $α'\sim0.25$ and $β\sim0.18$ is accompanied by the temperature evolution of the antiferromagnetic order parameter.
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Submitted 10 October, 2019;
originally announced October 2019.
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Negative Fermi-level Pinning Effect of Metal/n-GaAs(001) Junction with Graphene Interlayer
Authors:
Hoon Hahn Yoon,
Wonho Song,
Sungchul Jung,
Junhyung Kim,
Kyuhyung Mo,
Gahyun Choi,
Hu Young Jeong,
Jong Hoon Lee,
Kibog Park
Abstract:
It is demonstrated that the electric dipole layer due to the overlap** of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the lo…
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It is demonstrated that the electric dipole layer due to the overlap** of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the Schottky barrier decreasing as metal work-function increasing. Our work shows that the graphene interlayer can invert the effective work-function of metal between $high$ and $low$, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly $high$ work-function) metal electrodes on a semiconductor substrate possessing low surface-state density.
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Submitted 14 July, 2019;
originally announced July 2019.
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Topological superconductivity from transverse optical phonons in oxide heterostructures
Authors:
Minseong Lee,
Hyun-Jae Lee,
Jun Hee Lee,
Suk Bum Chung
Abstract:
A topological superconductor features at its boundaries and vortices Majorana fermions, which are potentially applicable for topological quantum computations. The scarcity of the known experimentally verified physical systems with topological superconductivity, time-reversal invariant ones in particular, is giving rise to a strong demand for identifying new candidate materials. In this research, w…
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A topological superconductor features at its boundaries and vortices Majorana fermions, which are potentially applicable for topological quantum computations. The scarcity of the known experimentally verified physical systems with topological superconductivity, time-reversal invariant ones in particular, is giving rise to a strong demand for identifying new candidate materials. In this research, we study a heterostructure consisting of a transition metal oxide two-dimensional electron gas (2DEG) sandwiched by insulators near the paraelectric (PE) / ferroelectric (FE) phase transition. Its relevant characteristics is the combination of the transition metal spin-orbit coupling and the soft odd-parity phonons arising from the ferroelectric fluctuation; it gives rise to the fluctuating Rashba effect, which can mediate the pairing interaction for time-reversal invariant topological superconductivity. As the PE / FE phase transition can be driven by applying strain on the heterostructure, this system provides a tunable electron-phonon coupling. Through the first-principle calculations on the (001) [BaOsO3][BaTiO3]4, we find such electron-phonon coupling to be strong over a wide range of applied tensile bi-axial strain in the monolayer BaOsO3 sandwiched between the (001) BaTiO3, hence qualifying it as a good candidate material. Furthermore, the stability of topological superconductivity in this material is enhanced by its orbital physics that gives rise to the anisotropic dispersion.
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Submitted 9 July, 2019; v1 submitted 9 July, 2019;
originally announced July 2019.
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Room Temperature Ferroelectric Ferromagnet in 1D Tetrahedral Chain Network
Authors:
Kyeong Tae Kang,
Chang Jae Roh,
**young Lim,
Taewon Min,
Jun Han Lee,
Kyoungjun Lee,
Tae Yoon Lee,
Seunghun Kang,
Daehee Seol,
Jiwoong Kim,
Hiromichi Ohta,
Amit Khare,
Sungkyun Park,
Yunseok Kim,
Seung Chul Chae,
Yoon Seok Oh,
Jaekwang Lee,
Jaejun Yu,
Jong Seok Lee,
Woo Seok Choi
Abstract:
Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Be…
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Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Because of the fundamentally different mechanism of ferroelectricity in a two-dimensional network, one can further challenge an uncharted mechanism of ferroelectricity in a one-dimensional channel of MOx and estimate its feasibility. This communication presents ferroelectricity and coupled ferromagnetism in a one-dimensional FeO4 tetrahedral chain network of a brownmillerite SrFeO2.5 epitaxial thin film. The result provides a new paradigm for designing low-dimensional MOx networks, which is expected to benefit the realization of macroscopic ferro-ordering materials including ferroelectric ferromagnets.
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Submitted 8 May, 2019;
originally announced May 2019.
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Mirage Andreev spectra generated by mesoscopic leads in nanowire quantum dots
Authors:
Z. Su,
A. Zarassi,
J. -F. Hsu,
P. San-Jose,
E. Prada,
R. Aguado,
E. J. H. Lee,
S. Gazibegovic,
R. Op het Veld,
D. Car,
S. R. Plissard,
M. Hocevar,
M. Pendharkar,
J. S. Lee,
J. A. Logan,
C. J. Palmstrom,
E. P. A. M. Bakkers,
S. M. Frolov
Abstract:
We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded…
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We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded spectrum is created. To describe the observations a model is developed that combines the effects of a soft induced gap and of additional Andreev bound states both in the quantum dot and in the finite regions of the nanowire adjacent to the quantum dot. Understanding of Andreev spectroscopy is important for the correct interpretation of Majorana experiments done on the same structures.
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Submitted 11 May, 2018;
originally announced May 2018.
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Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire
Authors:
J. C. Estrada Saldaña,
R. Žitko,
J. P. Cleuziou,
E. J. H. Lee,
V. Zannier,
D. Ercolani,
L. Sorba,
R. Aguado,
S. De Franceschi
Abstract:
We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional mode…
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We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional modes. For $B < 1$ T, the onset of superconductivity occurs in concomitance with the development of sizeable charge localization leading to a 0.7-type conductance anomaly. In this regime, the proximity supercurrent exhibits an unusual, non-monotonic $B$ dependence. We interpret this finding in terms of a competition between the Kondo effect, dominating near $B=0$, and the Zeeman effect, enforcing spin polarization and the emergence of a $π$ phase shift in the Josephson relation at higher $B$.
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Submitted 5 January, 2018;
originally announced January 2018.
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Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Do**
Authors:
**ho Park,
Jae Hyeong Lee,
Gil-Ho Lee,
Yositake Takane,
Ken-Ichiro Imura,
Takashi Taniguchi,
Kenji Watanabe,
Hu-Jong Lee
Abstract:
We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current $I_c$. An exceptionally large $I_cR_N$ product close to $2Δ_0/e$ ($R_N$; normal-state junction resistance, $Δ_0$ ; zero-temperature superconducting energy gap) is an indica…
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We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current $I_c$. An exceptionally large $I_cR_N$ product close to $2Δ_0/e$ ($R_N$; normal-state junction resistance, $Δ_0$ ; zero-temperature superconducting energy gap) is an indication of SB strong Josephson coupling. $I_c$ shows a temperature dependence inconsistent with the conventional short-junction-like behavior; $I_c(T)$ curves deviate systematically from the standard Kulik-Omel'yanchuk prediction. We argue that this feature stems from the planar nature of graphene junction, which is susceptible to the effects of inhomogeneous carrier do** as well in graphene near the superconducting contacts.
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Submitted 27 December, 2017;
originally announced December 2017.
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Electron-Hole Separation in Ferroelectric Oxides for Efficient Photovoltaic Responses
Authors:
Donghoon Kim,
Hyeon Han,
June Ho Lee,
Jeffrey C. Grossman,
Donghun Kim,
Hyun Myung Jang
Abstract:
Despite their potential to exceed the theoretical Shockley-Queisser limit, ferroelectric photovoltaics (FPVs) have performed inefficiently due to their extremely low photocurrents. Incorporating Bi2FeCrO6 (BFCO) as the light absorber in FPVs has recently led to impressively high and record photocurrents [Nechache et al. Nature Photon. 2015, 9, 61], reviving the FPV field. However, our understandin…
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Despite their potential to exceed the theoretical Shockley-Queisser limit, ferroelectric photovoltaics (FPVs) have performed inefficiently due to their extremely low photocurrents. Incorporating Bi2FeCrO6 (BFCO) as the light absorber in FPVs has recently led to impressively high and record photocurrents [Nechache et al. Nature Photon. 2015, 9, 61], reviving the FPV field. However, our understanding of this remarkable phenomenon is far from satisfactory. Here, we use first-principles calculations to determine that such excellent performance mainly lies in the efficient separation of electron-hole (e-h) pairs. We show that photoexcited electrons and holes in BFCO are spatially separated on the Fe and Cr sites, respectively. This separation is much more pronounced in disordered BFCO phases, which show exceptional PV responses. We further set out to design a strategy for next-generation FPVs, not limited to BFCO, by exploring 44 additional Bi-based double-perovskite oxides. We suggest 9 novel active-layer materials that can offer strong e-h separations and a desired band gap energy for application in FPVs. Our work indicates that charge separation is the most important issue to be addressed for FPVs to compete with conventional devices.
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Submitted 29 November, 2017;
originally announced November 2017.
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Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps
Authors:
Hyeon Han,
Donghoon Kim,
Ji Hyun Lee,
Jucheol Park,
Sang Yeol Nam,
Mingi Choi,
Kijung Yong,
Hyun Myung Jang
Abstract:
Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic…
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Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic effects using hexagonal ferrite (h-RFeO3) thin films having narrow band gaps of ~1.2 eV, where R denotes rare-earth ions. FPVs with narrow band gaps suggests their potential applicability as photovoltaic and optoelectronic devices. The h-RFeO3 films further exhibit reasonably large ferroelectric polarizations, which possibly reduces a rapid recombination rate of the photo-generated electron-hole pairs. The power conversion efficiency (PCE) of h-RFeO3 thin-film devices is sensitive on the magnitude of polarization. In the case of h-TmFeO3 (h-TFO) thin film, the measured PCE is twice as large as that of the BiFeO3 thin film, a prototypic FPV. We have further shown that the switchable photovoltaic effect dominates over the unswitchable internal field effect arising from the net built-in potential. This work thus demonstrates a new class of FPVs towards high-efficiency solar cell and optoelectronic applications.
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Submitted 8 November, 2017;
originally announced November 2017.
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Split-Channel Ballistic Transport in an InSb Nanowire
Authors:
J. C. Estrada Saldaña,
Y. M. Niquet,
J. P. Cleuziou,
E. J. H. Lee,
D. Car,
S. R. Plissard,
E. P. A. M. Bakkers,
S. De Franceschi
Abstract:
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of…
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We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of $e^2$/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear leaving a first conductance step of 2$e^2/h$, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the subband structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels.
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Submitted 9 March, 2018; v1 submitted 8 September, 2017;
originally announced September 2017.
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Transparent perovskite barium stannate with high electron mobility and thermal stability
Authors:
Woong-Jhae Lee,
Hyung Joon Kim,
Jeonghun Kang,
Dong Hyun Jang,
Tai Hoon Kim,
Jeong Hyuk Lee,
Kee Hoon Kim
Abstract:
Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel…
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Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible do** controllability at room temperature. This article reviews recent progress in the doped BaSnO3 system, discussing the wide physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomena at the heterointerface.
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Submitted 31 July, 2017;
originally announced July 2017.
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Revisiting optical properties of MgB$_{2}$ with a high-quality sample prepared by a HPCVD method
Authors:
Yu-Seong Seo,
Jae Hak Lee,
Won Nam Kang,
Jungseek Hwang
Abstract:
We investigated a high-quality MgB$_{2}$ thin film with a thickness of $\sim$1000 nm on an Al$_{2}$O$_{3}$ substrate using optical spectroscopy. We measured the reflectance spectra of the film at various temperatures both below, and above, the superconducting transition temperature, $T_c$ $\simeq$ 40 K. An earlier study showed that when the sample surface is exposed to air the optical properties o…
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We investigated a high-quality MgB$_{2}$ thin film with a thickness of $\sim$1000 nm on an Al$_{2}$O$_{3}$ substrate using optical spectroscopy. We measured the reflectance spectra of the film at various temperatures both below, and above, the superconducting transition temperature, $T_c$ $\simeq$ 40 K. An earlier study showed that when the sample surface is exposed to air the optical properties of the surface change immediately, however, the saturated change is negligibly small in the far-infrared region. The optical conductivity spectrum in the normal state shows two (narrow and broad) Drude modes, with the narrow Drude mode being dominant in the low frequency region below 1000 cm$^{-1}$. Our study, which uses a good-quality sample, provides more reliable data on the optical properties of MgB$_2$, in a similar spectral range. The optical data is analyzed further using an extended Drude model, and the electron-phonon spectral density function, $α^2F(ω)$, is extracted. The spectral density function $α^2F(ω)$ features two peaks: a small one near 114 cm$^{-1}$, and a strong peak around the 550 cm$^{-1}$ where the B-B bond stretching phonon exists. Our data in the superconducting state does not show the expected energy shift of the onset of scattering associated with the $α^2F(ω)$ peaks.
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Submitted 25 July, 2017;
originally announced July 2017.
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Strain-gradient-induced magnetic anisotropy in straight-stripe mixed-phase bismuth ferrites: An insight into flexomagnetic phenomenon
Authors:
** Hong Lee,
Kwang-Eun Kim,
Byung-Kweon Jang,
Ahmet A. Ünal,
Sergio Valencia,
Florian Kronast,
Kyung-Tae Ko,
Stefan Kowarik,
Jan Seidel,
Chan-Ho Yang
Abstract:
Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discover…
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Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discovered a correlation between an electrically-written straight-stripe mixed-phase boundary and an in-plane antiferromagnetic spin axis in highly-elongated La-5%-doped BiFeO$_{3}$ thin films by performing polarization-dependent photoemission electron microscopy in conjunction with cluster model calculations. Model Hamiltonian calculation for the single-ion anisotropy including the spin-orbit interaction has been performed to figure out the physical origin of the link between the strain gradient present in the mixed phase area and its antiferromagnetic spin axis. Our findings enable estimation of the strain-gradient-induced magnetic anisotropy energy per Fe ion at around 5$\times$10$^{-12}$ eV m, and provide a new pathway towards an electric-field-induced 90$^{\circ}$ rotation of antiferromagnetic spin axis at room temperature by flexomagnetism.
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Submitted 21 April, 2017;
originally announced April 2017.
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Scalability of Voltage-Controlled Filamentary and Nanometallic Resistance Memories
Authors:
Yang Lu,
Jong Ho Lee,
I-Wei Chen
Abstract:
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable devices spanning many length scales. In particular, the critical switching criterion is not clear for RRAM devices in which resistance changes are limited to locali…
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Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable devices spanning many length scales. In particular, the critical switching criterion is not clear for RRAM devices in which resistance changes are limited to localized nanoscale filaments that experience concentrated heat, electric current and field. Here, we demonstrate voltage-controlled resistance switching for macro and nano devices in both filamentary RRAM and nanometallic RRAM, the latter switches uniformly and does not require forming. As a result, using a constant current density as the compliance, we have achieved area-scalability for the low resistance state of the filamentary RRAM, and for both the low and high resistance states of the nanometallic RRAM. This finding will help design area-scalable RRAM at the nanoscale.
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Submitted 11 April, 2017;
originally announced April 2017.
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Magnetic Frustration Driven by Itinerancy in Spinel CoV2O4
Authors:
J. H. Lee,
J. Ma,
S. E. Hahn,
H. B. Cao,
Tao Hong,
M. S. Yeom,
S. Okamoto,
H. D. Zhou,
M. Matsuda,
R. S. Fishman
Abstract:
Localized spins and itinerant electrons rarely coexist in geometrically-frustrated spinel lattices. We show that the spinel CoV2O4 stands at the crossover from insulating to itinerant behavior and exhibits a complex interplay between localized spins and itinerant electrons. In contrast to the expected paramagnetism, localized spins supported by enhanced exchange couplings are frustrated by the eff…
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Localized spins and itinerant electrons rarely coexist in geometrically-frustrated spinel lattices. We show that the spinel CoV2O4 stands at the crossover from insulating to itinerant behavior and exhibits a complex interplay between localized spins and itinerant electrons. In contrast to the expected paramagnetism, localized spins supported by enhanced exchange couplings are frustrated by the effects of delocalized electrons. This frustration produces a non-collinear spin state and may be responsible for macroscopic spin-glass behavior. Competing phases can be uncovered by external perturbations such as pressure or magnetic field, which enhance the frustration.
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Submitted 9 February, 2017;
originally announced February 2017.
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Magnetic resonance study of bulk and thin film EuTiO3
Authors:
V. V. Laguta,
S. Kamba,
M. Maryško,
B. Andrzejewski,
M. Kachlík,
K. Maca,
J. H. Lee,
D. G. Schlom
Abstract:
Magnetic resonance spectra of EuTiO3 in both bulk and thin film form were taken at temperatures from 3-350 K and microwave frequencies from 9.2-9.8 and 34 GHz. In the paramagnetic phase, magnetic resonance spectra are determined by magnetic dipole and exchange interactions between Eu2+ spins. In the film, a large contribution arises from the demagnetization field. From detailed analysis of the lin…
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Magnetic resonance spectra of EuTiO3 in both bulk and thin film form were taken at temperatures from 3-350 K and microwave frequencies from 9.2-9.8 and 34 GHz. In the paramagnetic phase, magnetic resonance spectra are determined by magnetic dipole and exchange interactions between Eu2+ spins. In the film, a large contribution arises from the demagnetization field. From detailed analysis of the linewidth and its temperature dependence, the parameters of spin-spin interactions were determined: the exchange frequency is 15-15.5 GHz and the estimated critical exponent of the spin correlation length is ~ 0.5. In the bulk samples, the spectra exhibited a distinct minimum in the linewidth at the Néel temperature, T_N = 5.5 K, while the resonance field practically does not change even on cooling below T_N. This is indicative of a small magnetic anisotropy ~ 320 G in the antiferromagnetic phase. In the film, the magnetic resonance spectrum is split below T_N into several components due to excitation of the magnetostatic modes, corresponding to a non-uniform precession of magnetization. Moreover, the film was observed to degrade over two years. This was manifested by an increase of defects and a change in the domain structure. The saturated magnetization in the film, estimated from the magnetic resonance spectrum, was about 900 emu/cm3 or 5.5 mu_B/unit cell at T = 3.5 K.
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Submitted 17 December, 2016;
originally announced December 2016.
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Scaling of sub-gap excitations in a superconductor-semiconductor nanowire quantum dot
Authors:
Eduardo J. H. Lee,
Xiaocheng Jiang,
Rok Zitko,
Ramon Aguado,
Charles M. Lieber,
Silvano De Franceschi
Abstract:
A quantum dot coupled to a superconducting contact provides a tunable artificial analogue of a magnetic atom in a superconductor, a paradigmatic quantum impurity problem. We realize such a system with an InAs semiconductor nanowire contacted by an Al-based superconducting electrode. We use an additional normal-type contact as weakly coupled tunnel probe to perform tunneling spectroscopy measuremen…
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A quantum dot coupled to a superconducting contact provides a tunable artificial analogue of a magnetic atom in a superconductor, a paradigmatic quantum impurity problem. We realize such a system with an InAs semiconductor nanowire contacted by an Al-based superconducting electrode. We use an additional normal-type contact as weakly coupled tunnel probe to perform tunneling spectroscopy measurements of the elementary sub-gap excitations, known as Andreev bound states or Yu-Shiba-Rusinov states. We demonstrate that the energy of these states, $ζ$, scales with the ratio between the Kondo temperature, $T_K$, and the superconducting gap, $Δ$. $ζ$ vanishes for $T_K/Δ\approx 0.6$, denoting a quantum phase transition between spin singlet and doublet ground states. By further leveraging the gate control over the quantum dot parameters, we determine the singlet-doublet phase boundary in the stability diagram of the system. Our experimental results show remarkable quantitative agreement with numerical renormalization group calculations.
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Submitted 24 September, 2016;
originally announced September 2016.
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Precise measurements of optical Feshbach resonances of $^{174}$Yb atoms
Authors:
Min-Seok Kim,
Jeongwon Lee,
Jae Hoon Lee,
Y. Shin,
Jongchul Mun
Abstract:
We present precise measurements of the optical Feshbach resonances (OFRs) of $^{174}$Yb atoms for the intercombination transition. We measure the photoassociation (PA) spectra of a pure $^{174}$Yb Bose-Einstein condensate, and determine the dependence of OFRs to PA laser intensities and frequencies for four least bound vibrational levels near the intercombination transition. We confirm that our me…
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We present precise measurements of the optical Feshbach resonances (OFRs) of $^{174}$Yb atoms for the intercombination transition. We measure the photoassociation (PA) spectra of a pure $^{174}$Yb Bose-Einstein condensate, and determine the dependence of OFRs to PA laser intensities and frequencies for four least bound vibrational levels near the intercombination transition. We confirm that our measurements are consistent with the temporal decay of a BEC subjected to a PA beam in the vicinity of the fourth vibrational level from the dissociation limit.
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Submitted 20 May, 2016;
originally announced May 2016.
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First-principles approach to the dynamic magnetoelectric couplings in BiFeO$_3$
Authors:
Jun Hee Lee,
Istvan Kézsmáki,
Randy S. Fishman
Abstract:
Despite its great technological importance, the magnetoelectric (ME) couplings in \BF are barely understood. By using a first-principles approach, we uncover the {\it dynamic} ME couplings of the long-range spin-cycloid in BiFeO$_3$. Based on a microscopic Hamiltonian, our first-principles approach disentangles the hidden ME couplings due to spin-current and exchange-striction. Beyond the spin-cur…
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Despite its great technological importance, the magnetoelectric (ME) couplings in \BF are barely understood. By using a first-principles approach, we uncover the {\it dynamic} ME couplings of the long-range spin-cycloid in BiFeO$_3$. Based on a microscopic Hamiltonian, our first-principles approach disentangles the hidden ME couplings due to spin-current and exchange-striction. Beyond the spin-current polarization governed by the inverse Dzyaloshinskii-Moriya interaction \cite{iDM}, various spin-current polarizations derived from both ferroelectric and antiferrodistortive distortions cooperatively produce the strong non-reciprocal directional dichroism or the asymmetry in the absorption of counter-propagating light in BiFeO$_3$. Our systematic approach can be generally applied to any multiferroic material, laying the foundation for revealing hidden ME couplings on an atomic scale and for exploiting optical ME effects in the next generation of technological devices such as optical diodes.
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Submitted 24 July, 2015;
originally announced March 2016.
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Enhanced spin-orbit coupling in dilute fluorinated graphene
Authors:
Ahmet Avsar,
Jong Hak Lee,
Gavin Kok Wai Koon,
Barbaros Ozyilmaz
Abstract:
The preservation and manipulation of a spin state mainly depends on the strength of the spin-orbit interaction. For pristine graphene, the intrinsic spin-orbit coupling (SOC) is only in the order of few ueV, which makes it almost impossible to be used as an active element in future electric field controlled spintronics devices. This stimulates the development of a systematic method for extrinsical…
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The preservation and manipulation of a spin state mainly depends on the strength of the spin-orbit interaction. For pristine graphene, the intrinsic spin-orbit coupling (SOC) is only in the order of few ueV, which makes it almost impossible to be used as an active element in future electric field controlled spintronics devices. This stimulates the development of a systematic method for extrinsically enhancing the SOC of graphene. In this letter, we study the strength of SOC in weakly fluorinated graphene devices. We observe high non-local signals even without applying any external magnetic field. The magnitude of the signal increases with increasing fluorine adatom coverage. From the length dependence of the non-local transport measurements, we obtain SOC values of ~ 5.1 meV and ~ 9.1 meV for the devices with ~ 0.005% and ~ 0.06% fluorination, respectively. Such a large enhancement, together with the high charge mobility of fluorinated samples (u~4300 cm2/Vs - 2700 cm2/Vs), enables the detection of the spin Hall effect even at room temperature.
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Submitted 2 December, 2015;
originally announced December 2015.
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Two Distinct Modes of Hydrogen-Bonding Interaction in the Prototypic Hybrid Halide Perovskite, Tetragonal CH3NH3PbI3
Authors:
June Ho Lee,
Jung-Hoon Lee,
Eui-Hyun Kong,
Hyun M. Jang
Abstract:
In spite of the key role of hydrogen bonding in the structural stabilization of the prototypic hybrid halide perovskite, CH3NH3PbI3 (MAPbI3), little progress has been made in our in-depth understanding of the hydrogen-bonding interaction between the MA+-ion and the iodide ions in the PbI6-octahedron network. Herein, we show that there exist two distinct types of the hydrogen-bonding interaction, n…
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In spite of the key role of hydrogen bonding in the structural stabilization of the prototypic hybrid halide perovskite, CH3NH3PbI3 (MAPbI3), little progress has been made in our in-depth understanding of the hydrogen-bonding interaction between the MA+-ion and the iodide ions in the PbI6-octahedron network. Herein, we show that there exist two distinct types of the hydrogen-bonding interaction, naming a- and b-modes, in the tetragonal MAPbI3 on the basis of symmetry argument and density-functional theory calculations. The computed Kohn-Sham (K-S) energy difference between these two interaction modes is 45.14 meV per MA-site with the a-interaction mode being responsible for the stable hydrogen-bonding network. We have further estimated the individual bonding strength for the ten relevant hydrogen bonds having a bond critical point. The net difference in the total hydrogen-bonding energies between these two interaction modes is 43.87 meV per MA-site, which nearly coincides with the K-S energy difference of 45.14 meV.
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Submitted 9 November, 2015;
originally announced November 2015.
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Spin-Induced Polarizations and Non-Reciprocal Directional Dichroism of Multiferroic BiFeO$_3$
Authors:
Randy S. Fishman,
Jun Hee Lee,
Sándor Bordács,
István Kézsmárki,
Urmas Nagel,
Toomas Rõõm
Abstract:
A microscopic model for the room-temperature multiferroic BiFeO$_3$ that includes two Dzyaloshinskii-Moriya interactions and single-ion anisotropy along the ferroelectric polarization predicts both the zero-field spectroscopic modes as well as their splitting and evolution in a magnetic field. Due to simultaneously broken time-reversal and spatial-inversion symmetries, the absorption of light chan…
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A microscopic model for the room-temperature multiferroic BiFeO$_3$ that includes two Dzyaloshinskii-Moriya interactions and single-ion anisotropy along the ferroelectric polarization predicts both the zero-field spectroscopic modes as well as their splitting and evolution in a magnetic field. Due to simultaneously broken time-reversal and spatial-inversion symmetries, the absorption of light changes as the magnetic field or the direction of light propagation is reversed. We discuss three physical mechanisms that may contribute to this absorption asymmetry known as non-reciprocal directional dichroism: the spin current, magnetostriction, and single-ion anisotropy. We conclude that the non-reciprocal directional dichroism in \BF is dominated by the spin-current polarization and is insensitive to the magnetostriction and easy-axis anisotropy. With three independent spin-current parameters, our model accurately describes the non-reciprocal directional dichroism observed for magnetic field along $[1,-1,0]$. Since some modes are almost transparent to light traveling in one direction but opaque for light traveling in the opposite direction, BiFeO$_3$ can be used as a room-temperature optical diode at certain frequencies in the GHz to THz range. Our work demonstrates that an analysis of the non-reciprocal directional dichroism spectra based on an effective spin model supplemented by first-principles calculations can produce a quantitative microscopic theory of the magnetoelectric couplings in multiferroic materials.
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Submitted 13 July, 2015; v1 submitted 15 June, 2015;
originally announced June 2015.
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Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene layer on a Wide-Band Gap Semiconductor
Authors:
Ha-Chul Shin,
Yamu** Jang,
Tae-Hoon Kim,
Jun-Hae Lee,
Dong-Hwa Oh,
Sung Joon Ahn,
Jae Hyun Lee,
Youngkwon Moon,
Ji-Hoon Park,
Sung Jong Yoo,
Chong-Yun Park,
Dongmok Whang,
Cheol-Woong Yang,
Joung Real Ahn
Abstract:
Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD). However, once fabricated on…
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Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD). However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 oC using borazine molecules. Second, when heated above 1150 oC in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 oC, the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.
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Submitted 12 June, 2015;
originally announced June 2015.
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Optical diode effect in the room-temperature multiferroic BiFeO$_3
Authors:
I. Kezsmarki,
U. Nagel,
S. Bordacs,
R. S. Fishman,
J. H. Lee,
H. T. Yi,
S-W. Cheong,
T. Room
Abstract:
Multiferroics permit the magnetic control of the electric polarization and electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting because they give rise to unidirect…
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Multiferroics permit the magnetic control of the electric polarization and electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarized light in one, but not in the opposite direction. Here, we report strong unidirectional transmission in the room-temperature multiferroic BiFeO$_3$ over the gigahertz--terahertz frequency range. Supporting theory attributes the observed unidirectional transmission to the spin-current driven dynamic ME effect. These findings are an important step toward the realization of optical diodes, supplemented by the ability to switch the transmission direction with a magnetic or electric field.
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Submitted 30 April, 2015;
originally announced May 2015.
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Huge Spin-Driven Polarizations at Room-Temperature in bulk BiFeO3
Authors:
Jun Hee Lee,
Randy S. Fishman
Abstract:
The spin-driven polarizations of type-I multiferroics are veiled by the preexisting ferroelectric (FE) polarization. Using first-principles calculations combined with a spin model, we uncover two hidden but huge spin-driven polarizations in the room-temperature multiferroic BiFeO3. One is associated with the global inversion symmetry broken by a FE distortion and the other is associated with the l…
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The spin-driven polarizations of type-I multiferroics are veiled by the preexisting ferroelectric (FE) polarization. Using first-principles calculations combined with a spin model, we uncover two hidden but huge spin-driven polarizations in the room-temperature multiferroic BiFeO3. One is associated with the global inversion symmetry broken by a FE distortion and the other is associated with the local inversion symmetry broken by an antiferrodistortive octahedra rotation. Comparison with recent neutron scatterings reveals that first polarization reaches 3.0 $μ$C/cm$^2$, which is larger than in any other multiferroic material. Our exhaustive study paves a way to uncover the various magnetoelectric couplings that generate hidden spin-driven polarizations in other type-I multiferroics.
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Submitted 27 April, 2015;
originally announced April 2015.
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Giant spin-phonon-electronic coupling in a 5d oxide
Authors:
S. Calder,
J. H. Lee,
M. B. Stone,
M. D. Lumsden,
J. C. Lang,
M. Feygenson,
Y. G. Shi,
Y. S. Sun,
Y. Tsujimoto,
K. Yamaura,
A. D. Christianson
Abstract:
Enhanced coupling of material properties offers new fundamental insights and routes to multifunctional devices. In this context 5d oxides provide new paradigms of cooperative interactions driving novel emergent behavior. This is exemplified in 5d osmates that host a metal-insulator transition (MIT) driven by magnetic order. Here we consider the most robust case, the 5d perovskite NaOsO3, and revea…
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Enhanced coupling of material properties offers new fundamental insights and routes to multifunctional devices. In this context 5d oxides provide new paradigms of cooperative interactions driving novel emergent behavior. This is exemplified in 5d osmates that host a metal-insulator transition (MIT) driven by magnetic order. Here we consider the most robust case, the 5d perovskite NaOsO3, and reveal a giant coupling between spin and phonon through a frequency shift of Δω=40 cm-1, the largest measured in any material. We identify the dominant octahedral breathing mode and show isosymmetry with spin ordering which induces dynamic charge disproportionation that sheds new light on the MIT. The occurrence of the dramatic spin-phonon-electronic coupling in NaOsO3 is due to a property common to all 5d materials: the large spatial extent of the 5d ion. This allows magnetism to couple to phonons on an unprecedented scale and consequently offers multiple new routes to enhanced coupled phenomena.
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Submitted 9 January, 2015;
originally announced January 2015.