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Efficient fiber-coupled single-photon source based on quantum dots in a photonic-crystal waveguide
Authors:
Raphaël S. Daveau,
Krishna C. Balram,
Tommaso Pregnolato,
** Liu,
Eun H. Lee,
** D. Song,
Varun Verma,
Richard Mirin,
Sae Woo Nam,
Leonardo Midolo,
Søren Stobbe,
Kartik Srinivasan,
Peter Lodahl
Abstract:
Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide single-photon source relying on evanescent coupling of the light field from a tapered out-coupler to an optical fiber. A two-step approach is taken where the performance of the tapered out-coupl…
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Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide single-photon source relying on evanescent coupling of the light field from a tapered out-coupler to an optical fiber. A two-step approach is taken where the performance of the tapered out-coupler is recorded first on an independent device containing an on-chip reflector. Reflection measurements establish that the chip-to-fiber coupling efficiency exceeds 80 %. The detailed characterization of a high-efficiency photonic-crystal waveguide extended with a tapered out-coupling section is then performed. The corresponding overall single-photon source efficiency is 10.9 % $\pm$ 2.3 %, which quantifies the success probability to prepare an exciton in the quantum dot, couple it out as a photon in the waveguide, and subsequently transfer it to the fiber. The applied out-coupling method is robust, stable over time, and broadband over several tens of nanometers, which makes it a highly promising pathway to increase the efficiency and reliability of planar chip-based single-photon sources.
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Submitted 27 October, 2016;
originally announced October 2016.
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Deterministic photon-emitter coupling in chiral photonic circuits
Authors:
Immo Söllner,
Sahand Mahmoodian,
Sofie Lindskov Hansen,
Leonardo Midolo,
Alisa Javadi,
Gabija Kiršanskė,
Tommaso Pregnolato,
Haitham El-Ella,
Eun Hye Lee,
** Dong Song,
Søren Stobbe,
Peter Lodahl
Abstract:
The ability to engineer photon emission and photon scattering is at the heart of modern photonics applications ranging from light harvesting, through novel compact light sources, to quantum-information processing based on single photons. Nanophotonic waveguides are particularly well suited for such applications since they confine photon propagation to a 1D geometry thereby increasing the interacti…
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The ability to engineer photon emission and photon scattering is at the heart of modern photonics applications ranging from light harvesting, through novel compact light sources, to quantum-information processing based on single photons. Nanophotonic waveguides are particularly well suited for such applications since they confine photon propagation to a 1D geometry thereby increasing the interaction between light and matter. Adding chiral functionalities to nanophotonic waveguides lead to new opportunities enabling integrated and robust quantum-photonic devices or the observation of novel topological photonic states. In a regular waveguide, a quantum emitter radiates photons in either of two directions, and photon emission and absorption are reverse processes. This symmetry is violated in nanophotonic structures where a non-transversal local electric field implies that both photon emission and scattering may become directional. Here we experimentally demonstrate that the internal state of a quantum emitter determines the chirality of single-photon emission in a specially engineered photonic-crystal waveguide. Single-photon emission into the waveguide with a directionality of more than 90\% is observed under conditions where practically all emitted photons are coupled to the waveguide. Such deterministic and highly directional photon emission enables on-chip optical diodes, circulators operating at the single-photon level, and deterministic quantum gates. Based on our experimental demonstration, we propose an experimentally achievable and fully scalable deterministic photon-photon CNOT gate, which so far has been missing in photonic quantum-information processing where most gates are probabilistic.
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Submitted 12 January, 2015; v1 submitted 17 June, 2014;
originally announced June 2014.
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Excited exciton and biexciton localised states in a single quantum ring
Authors:
H. D. Kim,
K. Kyhm,
R. A. Taylor,
A. Nicolet,
M. Potemski,
G. Nogues,
K. C. Je,
E. H. Lee,
J. D. Song
Abstract:
We observe excited exciton and biexciton states of localised excitons in an anisotropic quantum ring, where large polarisation asymmetry supports the presence of a crescent-like localised structure. We also find that saturation of the localised ground state exciton with increasing excitation can be attributed to relatively fast dissociation of biexcitons (? 430 ps) compared to slow relaxation from…
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We observe excited exciton and biexciton states of localised excitons in an anisotropic quantum ring, where large polarisation asymmetry supports the presence of a crescent-like localised structure. We also find that saturation of the localised ground state exciton with increasing excitation can be attributed to relatively fast dissociation of biexcitons (? 430 ps) compared to slow relaxation from the excited state to the ground state (? 1000 ps). As no significant excitonic Aharonov-Bohm oscillations occur up to 14 T, we conclude that phase coherence around the rim is inhibited as a consequence of height anisotropy in the quantum ring.
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Submitted 23 September, 2013;
originally announced September 2013.
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Decay dynamics and exciton localization in large GaAs quantum dots grown by droplet epitaxy
Authors:
Petru Tighineanu,
Raphaël Daveau,
Eun Hye Lee,
** Dong Song,
Søren Stobbe,
Peter Lodahl
Abstract:
We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy quantum dots have a quantum efficiency of about 75% and an oscillator strength between 8 and 10. The quantum dots are found to be fully described by a model for str…
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We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy quantum dots have a quantum efficiency of about 75% and an oscillator strength between 8 and 10. The quantum dots are found to be fully described by a model for strongly-confined excitons, in contrast to the theoretical prediction that excitons in large quantum dots exhibit the so-called giant oscillator strength. We attribute these findings to localized ground-state excitons in potential minima created by material intermixing during growth. We provide further evidence for the strong-confinement regime of excitons by extracting the size of electron and hole wavefunctions from the phonon-broadened photoluminescence spectra. Furthermore, we explore the temperature dependence of the decay dynamics and, for some quantum dots, observe a pronounced reduction in the effective transition strength with temperature. We quantify and explain these effects as being an intrinsic property of large quantum dots owing to thermal excitation of the ground-state exciton. Our results provide a detailed understanding of the optical properties of large quantum dots in general, and of quantum dots grown by droplet epitaxy in particular.
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Submitted 4 April, 2014; v1 submitted 28 June, 2013;
originally announced June 2013.
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Asymmetry of localised states in a single quantum ring: polarization dependence of excitons and biexcitons
Authors:
H. D. Kim,
K. Kyhm,
R. A. Taylor,
G. Nogues,
K. C. Je,
E. H. Lee,
J. D. Song
Abstract:
We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy di erence (0.8 meV) in the exciton emission energy for perpendicular polarizations was ob…
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We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy di erence (0.8 meV) in the exciton emission energy for perpendicular polarizations was observed and the oscillator strengths were also compared using the photoluminescence decay rate. For perpendicular polarizations the biexciton exhibits twice the energy di erence seen for the exciton, a fact that may be attributed to a possible change in the selection rules for the lowered symmetry.
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Submitted 25 January, 2013;
originally announced January 2013.
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The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy
Authors:
Pilkyung Moon,
J. D. Lee,
S. K. Ha,
E. H. Lee,
W. J. Choi,
J. D. Song,
J. S. Kim,
L. S. Dang
Abstract:
We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We investigated the emission energy shifts of the dots and underlying superlattice by post-thermal annealing with photoluminescence and…
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We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We investigated the emission energy shifts of the dots and underlying superlattice by post-thermal annealing with photoluminescence and cathodoluminescence measurements, and specified the emissions from the dots by selectively etching the structure down to a lower layer of quantum dots. We studied the influences of the degree of annealing on the optical properties of the dots from the peak shifts of the superlattice, which has the same composition as the dots, since the superlattice has uniform and well-defined geometry. Theoretical analysis provided the diffusion length dependence of the peak shifts of the emission spectra.
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Submitted 21 August, 2012;
originally announced August 2012.
