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A proximitized quantum dot in germanium
Authors:
Lazar Lakic,
William I. L. Lawrie,
David van Driel,
Lucas E. A. Stehouwer,
Menno Veldhorst,
Giordano Scappucci,
Ferdinand Kuemmeth,
Anasua Chatterjee
Abstract:
Planar germanium quantum wells have recently been shown to host a hard-gapped superconductor-semiconductor interface. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host super…
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Planar germanium quantum wells have recently been shown to host a hard-gapped superconductor-semiconductor interface. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host superconductor-semiconductor hybrid devices, proximitized quantum dots in germanium are a crucial ingredient towards topological superconductivity and novel qubit modalities. Here we demonstrate a quantum dot (QD) in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtGeSi) superconducting lead (SC), forming a SC-QD-SC junction. We show tunability of the QD-SC coupling strength, as well as gate control of the ratio of charging energy and the induced gap. We further exploit this tunability by exhibiting control of the ground state of the system between even and odd parity. Furthermore, we characterize the critical magnetic field strengths, finding a robust critical out-of-plane field of 0.91(5) T. Finally we explore sub-gap spin splitting in the device, observing rich physics in the resulting spectra, that we model using a zero-bandwidth model in the Yu-Shiba-Rusinov limit. The demonstration of controllable proximitization at the nanoscale of a germanium quantum dot opens up the physics of novel spin and superconducting qubits, and Josephson junction arrays in a group IV material.
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Submitted 9 May, 2024; v1 submitted 3 May, 2024;
originally announced May 2024.
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Operating semiconductor quantum processors with hop** spins
Authors:
Chien-An Wang,
Valentin John,
Hanifa Tidjani,
Cécile X. Yu,
Alexander Ivlev,
Corentin Déprez,
Floor van Riggelen-Doelman,
Benjamin D. Woods,
Nico W. Hendrickx,
Will I. L. Lawrie,
Lucas E. A. Stehouwer,
Stefan Oosterhout,
Amir Sammak,
Mark Friesen,
Giordano Scappucci,
Sander L. de Snoo,
Maximilian Rimbach-Russ,
Francesco Borsoi,
Menno Veldhorst
Abstract:
Qubits that can be efficiently controlled are pivotal in the development of scalable quantum hardware. Resonant control is commonly embraced to execute high-fidelity quantum gates but demands integration of high-frequency oscillating signals and results in qubit crosstalk and heating. Establishing quantum control based on discrete signals could therefore result in a paradigm shift. This may be acc…
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Qubits that can be efficiently controlled are pivotal in the development of scalable quantum hardware. Resonant control is commonly embraced to execute high-fidelity quantum gates but demands integration of high-frequency oscillating signals and results in qubit crosstalk and heating. Establishing quantum control based on discrete signals could therefore result in a paradigm shift. This may be accomplished with single-spin semiconductor qubits, if one can engineer hop** spins between quantum dots with site-dependent spin quantization axis. Here, we introduce hop**-based universal quantum logic and obtain single-qubit gate fidelities of 99.97%, coherent shuttling fidelities of 99.992%, and two-qubit gates fidelities of 99.3%, corresponding to error rates that have been predicted to allow for quantum error correction. We demonstrate that hop** spins also constitute an elegant tuning method by statistically map** the coherence of a 10-quantum dot system. These results motivate dense quantum dot arrays with sparse occupation for efficient and high-connectivity qubit registers.
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Submitted 28 February, 2024;
originally announced February 2024.
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Coherent spin qubit shuttling through germanium quantum dots
Authors:
Floor van Riggelen-Doelman,
Chien-An Wang,
Sander L. de Snoo,
William I. L. Lawrie,
Nico W. Hendrickx,
Maximilian Rimbach-Russ,
Amir Sammak,
Giordano Scappucci,
Corentin Déprez,
Menno Veldhorst
Abstract:
Quantum links can interconnect qubit registers and are therefore essential in networked quantum computing. Semiconductor quantum dot qubits have seen significant progress in the high-fidelity operation of small qubit registers but establishing a compelling quantum link remains a challenge. Here, we show that a spin qubit can be shuttled through multiple quantum dots while preserving its quantum in…
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Quantum links can interconnect qubit registers and are therefore essential in networked quantum computing. Semiconductor quantum dot qubits have seen significant progress in the high-fidelity operation of small qubit registers but establishing a compelling quantum link remains a challenge. Here, we show that a spin qubit can be shuttled through multiple quantum dots while preserving its quantum information. Remarkably, we achieve these results using hole spin qubits in germanium, despite the presence of strong spin-orbit interaction. We accomplish the shuttling of spin basis states over effective lengths beyond 300 $μ$m and demonstrate the coherent shuttling of superposition states over effective lengths corresponding to 9 $μ$m, which we can extend to 49 $μ$m by incorporating dynamical decoupling. These findings indicate qubit shuttling as an effective approach to route qubits within registers and to establish quantum links between registers.
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Submitted 4 August, 2023;
originally announced August 2023.
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Bichromatic Rabi control of semiconductor qubits
Authors:
Valentin John,
Francesco Borsoi,
Zoltán György,
Chien-An Wang,
Gábor Széchenyi,
Floor van Riggelen,
William I. L. Lawrie,
Nico W. Hendrickx,
Amir Sammak,
Giordano Scappucci,
András Pályi,
Menno Veldhorst
Abstract:
Electrically-driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially-selective approach for large qubit arrays. By applying simultaneous microwave bursts to different…
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Electrically-driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially-selective approach for large qubit arrays. By applying simultaneous microwave bursts to different gate electrodes, we observe multichromatic resonance lines and resonance anticrossings that are caused by the ac Stark shift. Our theoretical framework aligns with experimental data, highlighting interdot motion as the dominant mechanism for bichromatic driving.
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Submitted 3 August, 2023;
originally announced August 2023.
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Exciton transport in a germanium quantum dot ladder
Authors:
T. -K. Hsiao,
P. Cova Fariña,
S. D. Oosterhout,
D. Jirovec,
X. Zhang,
C. J. van Diepen,
W. I. L. Lawrie,
C. -A. Wang,
A. Sammak,
G. Scappucci,
M. Veldhorst,
E. Demler,
L. M. K. Vandersypen
Abstract:
Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a g…
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Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a germanium 4$\times$2 quantum dot array and show that the naturally occurring long-range Coulomb interaction can lead to exciton formation and transport. We tune the quantum dot ladder into two capacitively-coupled channels and exploit Coulomb drag to probe the binding of electrons and holes. Specifically, we shuttle an electron through one leg of the ladder and observe that a hole is dragged along in the second leg under the right conditions. This corresponds to a transition from single-electron transport in one leg to exciton transport along the ladder. Our work paves the way for the study of excitonic states of matter in quantum dot arrays.
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Submitted 5 July, 2023;
originally announced July 2023.
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Probing resonating valence bonds on a programmable germanium quantum simulator
Authors:
Chien-An Wang,
Corentin Déprez,
Hanifa Tidjani,
William I. L. Lawrie,
Nico W. Hendrickx,
Amir Sammak,
Giordano Scappucci,
Menno Veldhorst
Abstract:
Simulations using highly tunable quantum systems may enable investigations of condensed matter systems beyond the capabilities of classical computers. Quantum dots and donors in semiconductor technology define a natural approach to implement quantum simulation. Several material platforms have been used to study interacting charge states, while gallium arsenide has also been used to investigate spi…
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Simulations using highly tunable quantum systems may enable investigations of condensed matter systems beyond the capabilities of classical computers. Quantum dots and donors in semiconductor technology define a natural approach to implement quantum simulation. Several material platforms have been used to study interacting charge states, while gallium arsenide has also been used to investigate spin evolution. However, decoherence remains a key challenge in simulating coherent quantum dynamics. Here, we introduce quantum simulation using hole spins in germanium quantum dots. We demonstrate extensive and coherent control enabling the tuning of multi-spin states in isolated, paired, and fully coupled quantum dots. We then focus on the simulation of resonating valence bonds and measure the evolution between singlet product states which remains coherent over many periods. Finally, we realize four-spin states with $s$-wave and $d$-wave symmetry. These results provide means to perform non-trivial and coherent simulations of correlated electron systems.
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Submitted 24 August, 2022;
originally announced August 2022.
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Phase flip code with semiconductor spin qubits
Authors:
F. van Riggelen,
W. I. L. Lawrie,
M. Russ,
N. W. Hendrickx,
A. Sammak,
M. Rispler,
B. M. Terhal,
G. Scappucci,
M. Veldhorst
Abstract:
The fault-tolerant operation of logical qubits is an important requirement for realizing a universal quantum computer. Spin qubits based on quantum dots have great potential to be scaled to large numbers because of their compatibility with standard semiconductor manufacturing. Here, we show that a quantum error correction code can be implemented using a four-qubit array in germanium. We demonstrat…
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The fault-tolerant operation of logical qubits is an important requirement for realizing a universal quantum computer. Spin qubits based on quantum dots have great potential to be scaled to large numbers because of their compatibility with standard semiconductor manufacturing. Here, we show that a quantum error correction code can be implemented using a four-qubit array in germanium. We demonstrate a resonant SWAP gate and by combining controlled-Z and controlled-$\text{S}^{-1}$ gates we construct a Toffoli-like three-qubit gate. We execute a two-qubit phase flip code and find that we can preserve the state of the data qubit by applying a refocusing pulse to the ancilla qubit. In addition, we implement a phase flip code on three qubits, making use of a Toffoli-like gate for the final correction step. Both the quality and quantity of the qubits will require significant improvement to achieve fault-tolerance. However, the capability to implement quantum error correction codes enables co-design development of quantum hardware and software, where codes tailored to the properties of spin qubits and advances in fabrication and operation can now come together to scale semiconductor quantum technology toward universal quantum computers.
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Submitted 23 February, 2022;
originally announced February 2022.
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Universal control of a six-qubit quantum processor in silicon
Authors:
Stephan G. J. Philips,
Mateusz T. Mądzik,
Sergey V. Amitonov,
Sander L. de Snoo,
Maximilian Russ,
Nima Kalhor,
Christian Volk,
William I. L. Lawrie,
Delphine Brousse,
Larysa Tryputen,
Brian Paquelet Wuetz,
Amir Sammak,
Menno Veldhorst,
Giordano Scappucci,
Lieven M. K. Vandersypen
Abstract:
Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity…
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Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity of either single- or two-qubit operations, or initialization and readout. Here we increase the number of qubits and simultaneously achieve respectable fidelities for universal operation, state preparation and measurement. We design, fabricate and operate a six-qubit processor with a focus on careful Hamiltonian engineering, on a high level of abstraction to program the quantum circuits and on efficient background calibration, all of which are essential to achieve high fidelities on this extended system. State preparation combines initialization by measurement and real-time feedback with quantum-non-demolition measurements. These advances will allow for testing of increasingly meaningful quantum protocols and constitute a major step** stone towards large-scale quantum computers.
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Submitted 18 February, 2022;
originally announced February 2022.
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Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold
Authors:
W. I. L. Lawrie,
M. Rimbach-Russ,
F. van Riggelen,
N. W. Hendrickx,
S. L. de Snoo,
A. Sammak,
G. Scappucci,
J. Helsen,
M. Veldhorst
Abstract:
Practical Quantum computing hinges on the ability to control large numbers of qubits with high fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we pre…
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Practical Quantum computing hinges on the ability to control large numbers of qubits with high fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we present single-qubit randomized benchmarking in a two-dimensional array of spin qubits, finding native gate fidelities as high as 99.992(1)%. Furthermore, we benchmark single qubit gate performance while simultaneously driving two and four qubits, utilizing a novel benchmarking technique called N-copy randomized benchmarking, designed for simple experimental implementation and accurate simultaneous gate fidelity estimation. We find two- and four-copy randomized benchmarking fidelities of 99.905(8)% and 99.34(4)% respectively, and that next-nearest neighbour pairs are highly robust to cross-talk errors. These characterizations of single-qubit gate quality are crucial for scaling up quantum information technology.
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Submitted 26 July, 2023; v1 submitted 16 September, 2021;
originally announced September 2021.
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A four-qubit germanium quantum processor
Authors:
N. W. Hendrickx,
W. I. L. Lawrie,
M. Russ,
F. van Riggelen,
S. L. de Snoo,
R. N. Schouten,
A. Sammak,
G. Scappucci,
M. Veldhorst
Abstract:
The prospect of building quantum circuits using advanced semiconductor manufacturing positions quantum dots as an attractive platform for quantum information processing. Extensive studies on various materials have led to demonstrations of two-qubit logic in gallium arsenide, silicon, and germanium. However, interconnecting larger numbers of qubits in semiconductor devices has remained an outstandi…
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The prospect of building quantum circuits using advanced semiconductor manufacturing positions quantum dots as an attractive platform for quantum information processing. Extensive studies on various materials have led to demonstrations of two-qubit logic in gallium arsenide, silicon, and germanium. However, interconnecting larger numbers of qubits in semiconductor devices has remained an outstanding challenge. Here, we demonstrate a four-qubit quantum processor based on hole spins in germanium quantum dots. Furthermore, we define the quantum dots in a two-by-two array and obtain controllable coupling along both directions. Qubit logic is implemented all-electrically and the exchange interaction can be pulsed to freely program one-qubit, two-qubit, three-qubit, and four-qubit operations, resulting in a compact and high-connectivity circuit. We execute a quantum logic circuit that generates a four-qubit Greenberger-Horne-Zeilinger state and we obtain coherent evolution by incorporating dynamical decoupling. These results are an important step towards quantum error correction and quantum simulation with quantum dots.
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Submitted 9 September, 2020;
originally announced September 2020.
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A two-dimensional array of single-hole quantum dots
Authors:
F. van Riggelen,
N. W. Hendrickx,
W. I. L. Lawrie,
M. Russ,
A. Summak,
G. Scappucci,
M. Veldhorst
Abstract:
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots positioned in a linear arrangement, scalability along two dimensions is a key step toward practical quantum information processing. Here we demonstrate a two-dime…
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Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots positioned in a linear arrangement, scalability along two dimensions is a key step toward practical quantum information processing. Here we demonstrate a two-dimensional quantum dot array where each quantum dot is tuned to single-charge occupancy, verified by simultaneous measuring with two integrated radio frequency charge sensors. We achieve this by using planar germanium quantum dots with low disorder and small effective mass, allowing the incorporation of dedicated barrier gates to control the coupling of the quantum dots. We demonstrate hole charge filling consistent with a Fock-Darwin spectrum and show that we can tune single-hole quantum dots from isolated quantum dots to strongly exchange coupled quantum dots. These results motivate the use of planar germanium quantum dots as building blocks for quantum simulation and computation.
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Submitted 26 August, 2020;
originally announced August 2020.
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High-fidelity two-qubit gates in silicon above one Kelvin
Authors:
L. Petit,
M. Russ,
H. G. J. Eenink,
W. I. L. Lawrie,
J. S. Clarke,
L. M. K. Vandersypen,
M. Veldhorst
Abstract:
Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to exec…
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Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to execute a multitude of native two-qubit gates in a single device, reducing the operation overhead to perform quantum algorithms. We demonstrate, at a temperature above one Kelvin, single-qubit rotations together with the two-qubit gates CROT, CPHASE and SWAP. Furthermore we realize adiabatic, diabatic and composite sequences to optimize the qubit control fidelity and the gate time. We find two-qubit gates that can be executed within 67 ns and by theoretically analyzing the experimental noise sources we predict fidelities exceeding 99%. This promises fault-tolerant operation using quantum hardware that can be embedded with classical electronics for quantum integrated circuits.
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Submitted 17 July, 2020;
originally announced July 2020.
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Low percolation density and charge noise with holes in germanium
Authors:
M. Lodari,
N. W. Hendrickx,
W. I. L. Lawrie,
T. -K. Hsiao,
L. M. K. Vandersypen,
A. Sammak,
M. Veldhorst,
G. Scappucci
Abstract:
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of $2.1\times10^{10}~\text{cm}^{-2}$, indicative of a very low disorder potential landscape experi…
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We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of $2.1\times10^{10}~\text{cm}^{-2}$, indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quiet operation of hole quantum dots and we measure charge noise levels that are below the detection limit $\sqrt{S_\text{E}}=0.2~μ\text{eV}/\sqrt{\text{Hz}}$ at 1 Hz. These results establish planar Ge as a promising platform for scaled two-dimensional spin qubit arrays.
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Submitted 13 July, 2020;
originally announced July 2020.
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Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
Authors:
W. I. L. Lawrie,
N. W. Hendrickx,
F. van Riggelen,
M. Russ,
L. Petit,
A. Sammak,
G. Scappucci,
M. Veldhorst
Abstract:
We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the (1,5)-(0,6) anticrossing, consistent with a standard Fock-Darwin spectrum. We find spin relaxation times $T_1$ as high as 32 ms for a quantum dot with single-hole…
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We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the (1,5)-(0,6) anticrossing, consistent with a standard Fock-Darwin spectrum. We find spin relaxation times $T_1$ as high as 32 ms for a quantum dot with single-hole occupation and 1.2 ms for a quantum dot occupied by five-holes, setting benchmarks for spin relaxation times for hole quantum dots. Furthermore, we investigate the qubit addressability and sensitivity to electric fields by measuring the resonance frequency dependence of each qubit on gate voltages. We are able to tune the resonance frequency over a large range for both the single and multi-hole qubit. Simultaneously, we find that the resonance frequencies are only weakly dependent on neighbouring gates, and in particular the five-hole qubit resonance frequency is more than twenty times as sensitive to its corresponding plunger gate. The excellent individual qubit tunability and long spin relaxation times make holes in germanium promising for addressable and high-fidelity spin qubits in dense two-dimensional quantum dot arrays for large-scale quantum information.
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Submitted 22 June, 2020;
originally announced June 2020.
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A single-hole spin qubit
Authors:
N. W. Hendrickx,
W. I. L. Lawrie,
L. Petit,
A. Sammak,
G. Scappucci,
M. Veldhorst
Abstract:
Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their inherent compatibility with standard semiconductor manufacturing. While early on it was recognized that holes may offer a multitude of favourable properties for fast and scalable quantum control, research thus far has remained almost exclusively restricted to the simpler electron system. However, rec…
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Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their inherent compatibility with standard semiconductor manufacturing. While early on it was recognized that holes may offer a multitude of favourable properties for fast and scalable quantum control, research thus far has remained almost exclusively restricted to the simpler electron system. However, recent developments with holes have led to separate demonstrations of single-shot readout and fast quantum logic, albeit only in the multi-hole regime. Here, we establish a single-hole spin qubit in germanium and demonstrate the integration of single-shot readout and quantum control. Moreover, we make use of Pauli spin blockade, allowing to arbitrarily set the qubit resonance frequency, while providing large readout windows. We deplete a planar germanium double quantum dot to the last hole, confirmed by radio-frequency reflectrometry charge sensing, and achieve single-shot spin readout. To demonstrate the integration of the readout and qubit operation, we show Rabi driving on both qubits and find remarkable electric control over their resonance frequencies. Finally, we analyse the spin relaxation time, which we find to exceed one millisecond, setting the benchmark for hole-based spin qubits. The ability to coherently manipulate a single hole spin underpins the quality of strained germanium and defines an excellent starting point for the construction of novel quantum hardware.
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Submitted 24 December, 2019; v1 submitted 22 December, 2019;
originally announced December 2019.
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Universal quantum logic in hot silicon qubits
Authors:
L. Petit,
H. G. J. Eenink,
M. Russ,
W. I. L. Lawrie,
N. W. Hendrickx,
J. S. Clarke,
L. M. K. Vandersypen,
M. Veldhorst
Abstract:
Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is ext…
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Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is extremely limited, and this severely impacts the perspective for practical quantum computation. Recent works on spins in silicon have shown steps towards a platform that can be operated at higher temperatures by demonstrating long spin lifetimes, gate-based spin readout, and coherent single-spin control, but the crucial two-qubit logic gate has been missing. Here we demonstrate that silicon quantum dots can have sufficient thermal robustness to enable the execution of a universal gate set above one Kelvin. We obtain single-qubit control via electron-spin-resonance (ESR) and readout using Pauli spin blockade. We show individual coherent control of two qubits and measure single-qubit fidelities up to 99.3 %. We demonstrate tunability of the exchange interaction between the two spins from 0.5 up to 18 MHz and use this to execute coherent two-qubit controlled rotations (CROT). The demonstration of `hot' and universal quantum logic in a semiconductor platform paves the way for quantum integrated circuits hosting the quantum hardware and their control circuitry all on the same chip, providing a scalable approach towards practical quantum information.
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Submitted 11 October, 2019;
originally announced October 2019.
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Quantum Dot Arrays in Silicon and Germanium
Authors:
W. I. L. Lawrie,
H. G. J. Eenink,
N. W. Hendrickx,
J. M. Boter,
L. Petit,
S. V. Amitonov,
M. Lodari,
B. Paquelet Wuetz,
C. Volk,
S. Philips,
G. Droulers,
N. Kalhor,
F. van Riggelen,
D. Brousse,
A. Sammak,
L. M. K. Vandersypen,
G. Scappucci,
M. Veldhorst
Abstract:
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereb…
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Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlap** gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing.
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Submitted 14 September, 2019;
originally announced September 2019.
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Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
Authors:
H. G. J. Eenink,
L. Petit,
W. I. L. Lawrie,
J. S. Clarke,
L. M. K. Vandersypen,
M. Veldhorst
Abstract:
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hu…
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Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hurdle with gate-defined quantum dots and show couplings that can be tuned on and off for quantum operations. We use charge sensing to discriminate between the (2,0) and (1,1) charge states of a double quantum dot and show excellent charge sensitivity. We demonstrate tunable coupling up to 13 GHz, obtained by fitting charge polarization lines, and tunable tunnel rates down to below 1 Hz, deduced from the random telegraph signal. The demonstration of tunable coupling between single electrons in a silicon metal-oxide-semiconductor device provides significant scope for high-fidelity two-qubit logic toward quantum information processing with standard manufacturing.
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Submitted 13 January, 2020; v1 submitted 19 July, 2019;
originally announced July 2019.
