Showing 1–50 of 83 results for author: Lau, C N

Dominant 1/3-filling Correlated Insulator States and Orbital Geometric Frustration in Twisted Bilayer Graphene

Authors: Haidong Tian, Emilio Codecido, Dan Mao, Kevin Zhang, Shi Che, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Eun-Ah Kim, Marc Bockrath, Chun Ning Lau

Abstract: Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangular lattice. Frustrated systems are characterized by their many nearly degenerate ground states, leading to non-trivial phases such as spin ice and spin liquids. To date most studies are on geometric frustration of spins;… ▽ More Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangular lattice. Frustrated systems are characterized by their many nearly degenerate ground states, leading to non-trivial phases such as spin ice and spin liquids. To date most studies are on geometric frustration of spins; much less explored is orbital geometric frustration. For electrons in twisted bilayer graphene (tBLG) at denominator 3 fractional filling, Coulomb interactions and the Wannier orbital shapes are predicted to strongly constrain spatial charge ordering, leading to geometrically frustrated ground states that produce a new class of correlated insulators (CIs). Here we report the observation of dominant denominator 3 fractional filling insulating states in large angle tBLG; these states persist in magnetic fields and display magnetic ordering signatures and tripled unit cell reconstruction. These results are in agreement with a strong-coupling theory of symmetry-breaking of geometrically frustrated fractional states. △ Less

Submitted 22 February, 2024; originally announced February 2024.

Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells

Authors: Dmitry Shcherbakov, Greyson Voigt, Shahriar Memaran, Gui-Bin Liu, Qiyue Wang, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Luis Balicas, Fan Zhang, Chun Ning Lau

Abstract: A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the inter-subband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we… ▽ More A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the inter-subband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we demonstrate electrostatic population and characterization of the second subband in few-layer InSe quantum wells, with giant tunability of its energy, population, and spin-orbit coupling strength, via the control of not only layer thickness but also out-of-plane displacement field. A modulation of as much as 350% or over 250 meV is achievable, underscoring the promise of InSe for tunable infrared and THz sources, detectors and modulators. △ Less

Submitted 23 February, 2024; v1 submitted 5 December, 2023; originally announced December 2023.

Quantum Octets in Air Stable High Mobility Two-Dimensional PdSe2

Authors: Yuxin Zhang, Haidong Tian, Huaixuan Li, Chiho Yoon, Ryan A. Nelson, Ziling Li, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Roland Kawakami, Joshua E. Goldberger, Fan Zhang, Chun Ning Lau

Abstract: Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compa… ▽ More Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large-scale synthesis. Here we demonstrate air-stable field-effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with record high saturation current >350μA/μm, and field effect mobilities 700 and 10,000 cm2/Vs at 300K and 2K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism. △ Less

Submitted 19 October, 2023; originally announced October 2023.

Comments: 4 figures, In review

Ideal Weak Topological Insulator and Protected Helical Saddle Points

Authors: Ji Seop Oh, Tianyi Xu, Nikhil Dhale, Sheng Li, Chao Lei, Chiho Yoon, Wenhao Liu, Jianwei Huang, Hanlin Wu, Makoto Hashimoto, Donghui Lu, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Chun Ning Lau, Bing Lv, Fan Zhang, Robert Birgeneau, Ming Yi

Abstract: The paradigm of classifying three-dimensional (3D) topological insulators into strong and weak ones (STI and WTI) opens the door for the discovery of various topological phases of matter protected by different symmetries and defined in different dimensions. However, in contrast to the vast realization of STIs, very few materials have been experimentally identified as being close to WTI. Even among… ▽ More The paradigm of classifying three-dimensional (3D) topological insulators into strong and weak ones (STI and WTI) opens the door for the discovery of various topological phases of matter protected by different symmetries and defined in different dimensions. However, in contrast to the vast realization of STIs, very few materials have been experimentally identified as being close to WTI. Even amongst those identified, none exists with topological surface states (TSS) exposed in a global bulk band gap that is stable at all temperatures. Here we report the design and observation of an ideal WTI in a quasi-one-dimensional (quasi-1D) bismuth halide, Bi$_{4}$I$_{1.2}$Br$_{2.8}$ (BIB). Via angle-resolved photoemission spectroscopy (ARPES), we identify that BIB hosts TSS on the (100)$\prime$ side surface in the form of two anisotropic $π$-offset Dirac cones (DCs) separated in momentum while topologically dark on the (001) top surface. The ARPES data fully determine a unique side-surface Hamiltonian and thereby identify two pairs of non-degenerate helical saddle points and a series of four Lifshitz transitions. The fact that both the surface Dirac and saddle points are in the global bulk band gap of 195 meV, combined with the small Dirac velocities, nontrivial spin texture, and the near-gap chemical potential, qualifies BIB to be not only an ideal WTI but also a fertile ground for topological many-body physics. △ Less

Submitted 30 January, 2023; v1 submitted 29 January, 2023; originally announced January 2023.

Thickness and twist angle dependent interlayer excitons in metal monochalcogenide heterostructures

Authors: Wenkai Zheng, Li Xiang, Felipe de Quesada, Mathias Augustin, Zhengguang Lu, Matthew Wilson, Aditya Sood, Fengcheng Wu, Dmitry Shcherbakov, Shahriar Memaran, Ryan E. Baumbach, Gregory T. McCandless, Julia Y. Chan, Song Liu, James Edgar, Chun Ning Lau, Chun Hung Lui, Elton Santos, Aaron Lindenberg, Dmitry Smirnov, Luis Balicas

Abstract: Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in… ▽ More Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely gamma-InSe on epsilon-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct bandgaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 \pm 0.1) Å with d being very close to dSe = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist angle dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. These heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier do**. △ Less

Submitted 15 October, 2022; originally announced October 2022.

Comments: ACS Nano, in press 42 pages plus, 4 figures, plus supplementary information file, containing 21 supplementary figures

Tuning Spin Transport in a Graphene Antiferromagnetic Insulator

Authors: Petr Stepanov, Dmitry L. Shcherbakov, Shi Che, Marc W. Bockrath, Yafis Barlas, Dmitry Smirnov, Kenji Watanabe, Takashi Taniguchi, Roger K. Lake, Chun Ning Lau

Abstract: Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an… ▽ More Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an all-graphene electrical circuit, for the first time we demonstrate a selective tuning of ambipolar spin transport through graphene $ν$=0 AFMIs. By modulating polarities of the excitation bias, magnetic fields, and charge carriers that host opposite chiralities, we show that the difference between spin chemical potentials of adjacent edge channels in the spin-injector region is crucial in tuning spin-transport observed across graphene AFMI. We demonstrate that non-local response vanishes upon reversing directions of the co-propagating edge channels when the spin-filters in our devices are no longer selective for a particular spin-polarization. Our results establish a versatile set of methods to tune pure spin transport via an anti-ferromagnetic media and open a pathway to explore their applications for a broad field of antiferromagnetic spintronics research. △ Less

Submitted 25 May, 2022; originally announced May 2022.

Journal ref: Phys. Rev. Applied 18, 014031, 2022

Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2

Authors: Guanzhong Wu1, Dongying Wang, Nishchhal Verma, Rahul Rao, Yang Cheng, Side Guo, Guixin Cao, Kenji Watanabe, Takashi Taniguchi, Chun Ning Lau, Fengyuan Yang, Mohit Randeria, Marc Bockrath, P. Chris Hammel

Abstract: Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry,… ▽ More Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry, high spin orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert dam** in the WTe2 covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert dam** enhancement have no observable WTe2 thickness dependence down to single quadruple-layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane dam** like spin torque, makes it desirable for magnetic memory applications. △ Less

Submitted 6 February, 2022; originally announced February 2022.

Comments: Nano Letters, in press

Light sources with bias tunable spectrum based on van der Waals interface transistors

Authors: Hugo Henck, Diego Mauro, Daniil Domaretskiy, Marc Philippi, Shahriar Memaran, Wenkai Zheng, Zhengguang Lu, Dmitry Shcherbakov, Chun Ning Lau, Dmitry Smirnov, Luis Balicas, Kenji Watanabe, Vladimir I. Fal'ko, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broa… ▽ More Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods. △ Less

Submitted 8 July, 2022; v1 submitted 4 January, 2022; originally announced January 2022.

Report number: 10.1038/s41467-022-31605-9

Journal ref: Nature Communications 13, 3917 (2022)

Evidence for Flat Band Dirac Superconductor Originating from Quantum Geometry

Authors: Haidong Tian, Shi Che, Tianyi Xu, Patrick Cheung, Kenji Watanabe, Takashi Taniguchi, Mohit Randeria, Fan Zhang, Chun Ning Lau, Marc W. Bockrath

Abstract: In a flat band superconductor, the charge carriers' group velocity vF is extremely slow, quenching their kinetic energy. The emergence of superconductivity thus appears paradoxical, as conventional BCS theory implies a vanishing coherence length, superfluid stiffness, and critical current. Here, using twisted bilayer graphene (tBLG), we explore the profound effect of vanishingly small vF in a Dira… ▽ More In a flat band superconductor, the charge carriers' group velocity vF is extremely slow, quenching their kinetic energy. The emergence of superconductivity thus appears paradoxical, as conventional BCS theory implies a vanishing coherence length, superfluid stiffness, and critical current. Here, using twisted bilayer graphene (tBLG), we explore the profound effect of vanishingly small vF in a Dirac superconducting flat band system Using Schwinger-limited non-linear transport studies, we demonstrate an extremely slow vF ~ 1000 m/s for filling fraction nu between -1/2 and -3/4 of the moire superlattice. In the superconducting state, the same velocity limit constitutes a new limiting mechanism for the critical current, analogous to a relativistic superfluid. Importantly, our measurement of superfluid stiffness, which controls the superconductor's electrodynamic response, shows that it is not dominated by the kinetic energy, but instead by the interaction-driven superconducting gap, consistent with recent theories on a quantum geometric contribution. We find evidence for small pairs, characteristic of the BCS to Bose-Einstein condensation (BEC) crossover, with an unprecedented ratio of the superconducting transition temperature to the Fermi temperature exceeding unity, and discuss how this arises for very strong coupling superconductivity in ultra-flat Dirac bands. △ Less

Submitted 26 December, 2021; originally announced December 2021.

Comments: 4 figures

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi$_4$I$_4$

Authors: Jianwei Huang, Sheng Li, Chiho Yoon, Ji Seop Oh, Han Wu, Xiaoyuan Liu, Nikhil Dhale, Yan-Feng Zhou, Yucheng Guo, Yichen Zhang, Makoto Hashimoto, Donghui Lu, Jonathan Denlinger, Xiqu Wang, Chun Ning Lau, Robert J. Birgeneau, Fan Zhang, Bing Lv, Ming Yi

Abstract: Quasi-one-dimensional (1D) materials provide a superior platform for characterizing and tuning topological phases for two reasons: i) existence for multiple cleavable surfaces that enables better experimental identification of topological classification, and ii) stronger response to perturbations such as strain for tuning topological phases compared to higher dimensional crystal structures. In thi… ▽ More Quasi-one-dimensional (1D) materials provide a superior platform for characterizing and tuning topological phases for two reasons: i) existence for multiple cleavable surfaces that enables better experimental identification of topological classification, and ii) stronger response to perturbations such as strain for tuning topological phases compared to higher dimensional crystal structures. In this paper, we present experimental evidence for a room-temperature topological phase transition in the quasi-1D material Bi$_4$I$_4$, mediated via a first order structural transition between two distinct stacking orders of the weakly-coupled chains. Using high resolution angle-resolved photoemission spectroscopy on the two natural cleavable surfaces, we identify the high temperature $β$ phase to be the first weak topological insulator with gapless Dirac cones on the (100) surface and no Dirac crossing on the (001) surface, while in the low temperature $α$ phase, the topological surface state on the (100) surface opens a gap, consistent with a recent theoretical prediction of a higher-order topological insulator beyond the scope of the established topological materials databases that hosts gapless hinge states. Our results not only identify a rare topological phase transition between first-order and second-order topological insulators but also establish a novel quasi-1D material platform for exploring unprecedented physics. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Comments: 9 pages, 4 figures, accepted for publication in Phys. Rev. X

Journal ref: Phys. Rev. X 11, 031042 (2021)

Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor

Authors: D. Shcherbakov, P. Stepanov, S. Memaran, Y. Wang, Y. Xin, J. Yang, K. Wei, R. Baumbach, W. Zheng, K. Watanabe, T. Taniguchi, M. Bockrath, D. Smirnov, T. Siegrist, W. Windl, L. Balicas, C. N. Lau

Abstract: Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate… ▽ More Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate SOC and intrinsic spin-splitting in atomically thin InSe, which can be modified over an unprecedentedly large range. From quantum oscillations, we establish that the SOC parameter αis thickness-dependent; it can be continuously modulated over a wide range by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Surprisingly, αcould be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Equilibration and Filtering of Quantum Hall Edge States in Few-Layer Black Phosphorus

Authors: J. Yang, K. Wang, S. Che, Z. J. Tuchfeld, K. Watanabe, T. Taniguchi, D. Shcherbakov, S. Moon, D. Smirnov, R. Chen, M. Bockrath, C. N. Lau

Abstract: We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both full equilibration, where all edge channels equilibrate and are equally partitioned at the interfaces, and partial equilibration, where only equilibrati… ▽ More We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both full equilibration, where all edge channels equilibrate and are equally partitioned at the interfaces, and partial equilibration, where only equilibration only takes place among modes of the same spin polarization. Furthermore, the inner p'-region with low-do** level in the junction can function as a filter for highly doped p-regions which demonstrates gate-tunable transmission of edge channels. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Engineering symmetry breaking in two-dimensional layered materials

Authors: Luojun Du, Tawfique Hasan, Andres Castellanos-Gomez, Gui-Bin Liu, Yugui Yao, Chun Ning Lau, Zhipei Sun

Abstract: Symmetry breaking in two-dimensional layered materials plays a significant role in their macroscopic electrical, optical, magnetic and topological properties, including but not limited to spin-polarization effects, valley-contrasting physics, nonlinear Hall effects, nematic order, ferroelectricity, Bose-Einstein condensation and unconventional superconductivity. Engineering symmetry breaking of tw… ▽ More Symmetry breaking in two-dimensional layered materials plays a significant role in their macroscopic electrical, optical, magnetic and topological properties, including but not limited to spin-polarization effects, valley-contrasting physics, nonlinear Hall effects, nematic order, ferroelectricity, Bose-Einstein condensation and unconventional superconductivity. Engineering symmetry breaking of two-dimensional layered materials not only offers extraordinary opportunities to tune their physical properties, but also provides unprecedented possibilities to introduce completely new physics and technological innovations in electronics, photonics and optoelectronics. Indeed, over the past 15 years, a wide variety of physical, structural and chemical approaches have been developed to engineer symmetry breaking of two-dimensional layered materials. In this Review, we focus on the recent progresses on engineering the breaking of inversion, rotational, time reversal and spontaneous gauge symmetries in two-dimensional layered materials, and illustrate our perspectives on how these may lead to potential new physics and applications. △ Less

Submitted 18 November, 2020; originally announced November 2020.

Comments: 35 pages, 4 figures

Journal ref: Nature Reviews Physics (2021)

Strange metal behavior of the Hall angle in twisted bilayer graphene

Authors: Rui Lyu, Zachary Tuchfeld, Nishchhal Verma, Haidong Tian, Kenji Watanabe, Takashi Taniguchi, Chun Ning Lau, Mohit Randeria, Marc Bockrath

Abstract: Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle $\approx 1.08^{\circ}$ hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity and magnetism. Here we report combined temperature-dependent transport measurements of the longitudinal and Hall resistivities in close to magic-angle TBG. While the observed longitudinal resistivit… ▽ More Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle $\approx 1.08^{\circ}$ hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity and magnetism. Here we report combined temperature-dependent transport measurements of the longitudinal and Hall resistivities in close to magic-angle TBG. While the observed longitudinal resistivity follows linear temperature $T$ dependence consistent with previous reports, the Hall resistance shows an anomalous $T$ dependence with the cotangent of the Hall angle cot $Θ{_H} \propto T^2$. Boltzmann theory for quasiparticle transport predicts that both the resistivity and cot $Θ{_H}$ should have the same $T$ dependence, contradicting the observed behavior. This failure of quasiparticle-based theories is reminiscent of other correlated strange metals such as cuprates. △ Less

Submitted 16 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. B 103, 245424 (2021)

Helical Edge States and Quantum Phase Transitions in Tetralayer Graphene

Authors: Shi Che, Yanmeng Shi, Jiawei Yang, Haidong Tian, Ruoyu Chen, Takashi Taniguchi, Kenji Watanabe, Dmitry Smirnov, Chun Ning Lau, Efrat Shimshoni, Ganpathy Murthy, Herbert A. Fertig

Abstract: Helical conductors with spin-momentum locking are promising platforms for Majorana fermions. Here we report observation of two topologically distinct phases supporting helical edge states in charge neutral Bernal-stacked tetralayer graphene in Hall bar and Corbino geometries. As the magnetic field B and out-of-plane displacement field D are varied, we observe a phase diagram consisting of an insul… ▽ More Helical conductors with spin-momentum locking are promising platforms for Majorana fermions. Here we report observation of two topologically distinct phases supporting helical edge states in charge neutral Bernal-stacked tetralayer graphene in Hall bar and Corbino geometries. As the magnetic field B and out-of-plane displacement field D are varied, we observe a phase diagram consisting of an insulating phase and two metallic phases, with 0, 1 and 2 helical edge states, respectively. These phases are accounted for by a theoretical model that relates their conductance to spin-polarization plateaus. Transitions between them arise from a competition among inter-layer hop**, electrostatic and exchange interaction energies. Our work highlights the complex competing symmetries and the rich quantum phases in few-layer graphene. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Comments: Accepted by PRL

Journal ref: Phys. Rev. Lett. 125, 036803 (2020)

Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene

Authors: Yong** Lee, Shi Che, Jairo Velasco Jr., David Tran, Jacopo Baima, Francesco Mauri, Matteo Calandra, Marc Bockrath, Chun Ning Lau

Abstract: Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the strong exchange interaction among the magnetic moments of d- or f-shell electrons. Magnetism, however, can also emerge in perfect lattices from non-magnetic elemen… ▽ More Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the strong exchange interaction among the magnetic moments of d- or f-shell electrons. Magnetism, however, can also emerge in perfect lattices from non-magnetic elements. For instance, flat band systems with high density of states (DOS) may develop spontaneous magnetic ordering, as exemplified by the Stoner criterion. Here we report tunable magnetism in rhombohedral-stacked few-layer graphene (r-FLG). At small but finite do** (n~10^11 cm-2), we observe prominent conductance hysteresis and giant magnetoconductance that exceeds 1000% as a function of magnetic fields. Both phenomena are tunable by density and temperature, and disappears for n>10^12 cm-2 or T>5K. These results are confirmed by first principles calculations, which indicate the formation of a half-metallic state in doped r-FLG, in which the magnetization is tunable by electric field. Our combined experimental and theoretical work demonstrate that magnetism and spin polarization, arising from the strong electronic interactions in flat bands, emerge in a system composed entirely of carbon atoms. The electric field tunability of magnetism provides promise for spintronics and low energy device engineering. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Distinct magneto-Raman signatures of spin-flip phase transitions in CrI3

Authors: Amber McCreary, Thuc T. Mai, Franz G. Utermohlen, Jeffrey R. Simpson, Kevin F. Garrity, Xiaozhou Feng, Dmitry Shcherbakov, Yanglin Zhu, ** Hu, Daniel Weber, Kenji Watanabe, Takashi Taniguchi, Joshua E. Goldberger, Zhiqiang Mao, Chun Ning Lau, Yuanming Lu, Nandini Trivedi, Rolando Valdés Aguilar, Angela R. Hight Walker

Abstract: The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of research in 2D magnetism from both pure and applied perspectives. Here, we report a magneto-Raman spectroscopy study on multilayered CrI3, focusing on two new features in the spectra which appear at temperatures below the magnetic ordering temperature and wer… ▽ More The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of research in 2D magnetism from both pure and applied perspectives. Here, we report a magneto-Raman spectroscopy study on multilayered CrI3, focusing on two new features in the spectra which appear at temperatures below the magnetic ordering temperature and were previously assigned to high frequency magnons. We observe a striking evolution of the Raman spectra with increasing magnetic field in which clear, sudden changes in intensities of the modes are attributed to the interlayer ordering changing from antiferromagnetic to ferromagnetic at a critical magnetic field. Our work highlights the sensitivity of the Raman modes to weak interlayer spin ordering in CrI3. In addition, we theoretically examine potential origins for the new modes, which we deduce are unlikely single magnons. △ Less

Submitted 6 April, 2020; v1 submitted 2 October, 2019; originally announced October 2019.

Quantum Hall Effect Measurement of Spin-Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures

Authors: Dongying Wang, Shi Che, Guixin Cao, Rui Lyu, Kenji Watanabe, Takashi Taniguchi, Chun Ning Lau, Marc Bockrath

Abstract: We study proximity-induced spin-orbit coupling (SOC) in bilayer graphene/few-layer WSe2 heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultra-clean interfaces and high-mobility devices. In a perpendicular magnetic field, we measure the quantum Hall effect to determine the Landau level structure in the presence of out-of-plane Ising and in-plane Rashba SOC. A dis… ▽ More We study proximity-induced spin-orbit coupling (SOC) in bilayer graphene/few-layer WSe2 heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultra-clean interfaces and high-mobility devices. In a perpendicular magnetic field, we measure the quantum Hall effect to determine the Landau level structure in the presence of out-of-plane Ising and in-plane Rashba SOC. A distinct Landau level crossing pattern emerges when tuning the charge density and displacement field independently with dual gates, originating from a layer-selective SOC proximity effect. Analyzing the Landau level crossings and measured inter-Landau level energy gaps yields the proximity induced SOC energy scale. The Ising SOC is ~ 2.2 meV, 100 times higher than the intrinsic SOC in graphene, while its sign is consistent with theories predicting a dependence of SOC on interlayer twist angle. The Rashba SOC is ~15 meV. Finally, we infer the magnetic field dependence of the inter-Landau level Coulomb interactions. These ultraclean bilayer graphene/WSe2 heterostructures provide a high mobility system with the potential to realize novel topological electronic states and manipulate spins in nanostructures. △ Less

Submitted 24 September, 2019; originally announced September 2019.

Comments: Nano Letters, in press

Correlated Insulating and Superconducting States in Twisted Bilayer Graphene Below the Magic Angle

Authors: Emilio Codecido, Qiyue Wang, Ryan Koester, Shi Che, Haidong Tian, Rui Lv, Son Tran, Kenji Watanabe, Takashi Taniguchi, Fan Zhang, Marc Bockrath, Chun Ning Lau

Abstract: The emergence of flat bands and correlated behaviors in 'magic angle' twisted bilayer graphene (tBLG) has sparked tremendous interest, though many aspects of the system are under intense debate. Here we report observation of both superconductivity and the Mott-like insulating state in a tBLG device with a twist angle of approximately 0.93, which is smaller than the magic angle by 15%. At an electr… ▽ More The emergence of flat bands and correlated behaviors in 'magic angle' twisted bilayer graphene (tBLG) has sparked tremendous interest, though many aspects of the system are under intense debate. Here we report observation of both superconductivity and the Mott-like insulating state in a tBLG device with a twist angle of approximately 0.93, which is smaller than the magic angle by 15%. At an electron concentration of +/-5 electrons per moire unit cell, we observe a narrow resistance peak with an activation energy gap of approximately 0.1 meV, indicating the existence of an additional correlated insulating state. This is consistent with theory predicting the presence of a high-energy band with an energetically flat dispersion. At a do** of +/-12 electrons per moire unit cell we observe a resistance peak due to the presence of Dirac points in the spectrum. Our results reveal that the magic range of tBLG is in fact larger than what is previously expected, and provide a wealth of new information to help decipher the strongly correlated phenomena observed in tBLG. △ Less

Submitted 13 February, 2019; originally announced February 2019.

Quantum Parity Hall effect in ABA Graphene

Authors: Petr Stepanov, Yafis Barlas, Shi Che, Kevin Myhro, Greyson Voigt, Ziqi Pi, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Fan Zhang, R. Lake, Allan MacDonald, Chun Ning Lau

Abstract: The celebrated phenomenon of quantum Hall effect has recently been generalized from transport of conserved charges to that of other approximately conserved state variables, including spin and valley, which are characterized by spin- or valley-polarized boundary states with different chiralities. Here, we report a new class of quantum Hall effect in ABA-stacked graphene trilayers (TLG), the quantum… ▽ More The celebrated phenomenon of quantum Hall effect has recently been generalized from transport of conserved charges to that of other approximately conserved state variables, including spin and valley, which are characterized by spin- or valley-polarized boundary states with different chiralities. Here, we report a new class of quantum Hall effect in ABA-stacked graphene trilayers (TLG), the quantum parity Hall (QPH) effect, in which boundary channels are distinguished by even or odd parity under the systems mirror reflection symmetry. At the charge neutrality point and a small perpendicular magnetic field $B_{\perp}$, the longitudinal conductance $σ_{xx}$ is first quantized to $4e^2/h$, establishing the presence of four edge channels. As $B_{\perp}$ increases, $σ_{xx}$ first decreases to $2e^2/h$, indicating spin-polarized counter-propagating edge states, and then to approximately $0$. These behaviors arise from level crossings between even and odd parity bulk Landau levels, driven by exchange interactions with the underlying Fermi sea, which favor an ordinary insulator ground state in the strong $B_{\perp}$ limit, and a spin-polarized state at intermediate fields. The transitions between spin-polarized and unpolarized states can be tuned by varying Zeeman energy. Our findings demonstrate a topological phase that is protected by a gate-controllable symmetry and sensitive to Coulomb interactions. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Raman Spectroscopy, Photocatalytic Degradation and Stabilization of Atomically Thin Chromium Triiodide

Authors: Dmitry Shcherbakov, Petr Stepanov, Daniel Weber, Yaxian Wang, ** Hu, Yanglin Zhu, Kenji Watanabe, Takashi Taniguchi, Zhiqiang Mao, Wolfgang Windl, Joshua Goldberger, Marc Bockrath, Chun Ning Lau

Abstract: As a 2D ferromagnetic semiconductor with magnetic ordering, atomically thin chromium triiodide is the latest addition to the family of two-dimensional (2D) materials. However, realistic exploration of CrI3-based devices and heterostructures is challenging, due to its extreme instability under ambient conditions. Here we present Raman characterization of CrI3, and demonstrate that the main degradat… ▽ More As a 2D ferromagnetic semiconductor with magnetic ordering, atomically thin chromium triiodide is the latest addition to the family of two-dimensional (2D) materials. However, realistic exploration of CrI3-based devices and heterostructures is challenging, due to its extreme instability under ambient conditions. Here we present Raman characterization of CrI3, and demonstrate that the main degradation pathway of CrI3 is the photocatalytic substitution of iodine by water. While simple encapsulation by Al2O3, PMMA and hexagonal BN (hBN) only leads to modest reduction in degradation rate, minimizing exposure of light markedly improves stability, and CrI3 sheets sandwiched between hBN layers are air-stable for >10 days. By monitoring the transfer characteristics of CrI3/graphene heterostructure over the course of degradation, we show that the aquachromium solution hole-dopes graphene. △ Less

Submitted 23 May, 2018; originally announced May 2018.

Comments: 4 figures

Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors

Authors: Jiawei Yang, Son Tran, Jason Wu, Shi Che, Petr Stepanov, Takashi Taniguchi, Kenji Watanabe, Hongwoo Baek, Dmitry Smirnov, Ruoyu Chen, Chun Ning Lau

Abstract: As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding questions such as the functional dependence of Landau level (LL) gaps on magnetic field B, and possible anisotropic fractional QH states. Using encapsulating few-layer… ▽ More As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding questions such as the functional dependence of Landau level (LL) gaps on magnetic field B, and possible anisotropic fractional QH states. Using encapsulating few-layer BP transistors with mobility up to 55,000 cm2/Vs, we extract LL gaps over an exceptionally wide range of B for QH states at filling factors ν=-1 to -4, which are determined to be linear in B, thus resolving a controversy raised by its anisotropy. Furthermore, a fractional QH state at ν~ -4/3 and an additional feature at -0.56+/- 0.1 are observed, underscoring BP as a tunable 2D platform for exploring electron interactions. △ Less

Submitted 6 April, 2018; originally announced April 2018.

Journal ref: Nano Lett. 18, 1, 229-234 (2018)

Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures

Authors: Shi Che, Petr Stepanov, Supeng Ge, Yong** Lee, Kevin Myhro, Yanmeng Shi, Ruoyu Chen, Ziqi Pi, Cheng Pan, Bin Cheng, Takashi Taniguchi, Kenji Watanabe, Marc Bockrath, Yafis Barlas, Roger Lake, Chun Ning Lau

Abstract: The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depend… ▽ More The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in TLG's lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering. △ Less

Submitted 9 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. Lett. 125, 246401 (2020)

Large tunable intrinsic gap in rhombohedral-stacked tetralayer graphene

Authors: K. Myhro, S. Che, Y. Shi, Y. Lee, K. Thilahar, K. Bleich, Dmitry Smirnov, C. N. Lau

Abstract: In rhombohedral-stacked few-layer graphene, the very flat energy bands near the charge neutrality point are unstable to electronic interactions, giving rise to states with spontaneous broken symmetries. Using transport measurements on suspended rhombohedral-stacked tetralayer graphene, we observe an insulating ground state with a large interaction-induced gap up to 80 meV. This gapped state can be… ▽ More In rhombohedral-stacked few-layer graphene, the very flat energy bands near the charge neutrality point are unstable to electronic interactions, giving rise to states with spontaneous broken symmetries. Using transport measurements on suspended rhombohedral-stacked tetralayer graphene, we observe an insulating ground state with a large interaction-induced gap up to 80 meV. This gapped state can be enhanced by a perpendicular magnetic field, and suppressed by an interlayer potential, carrier density, or a critical temperature of ~ 40 K. △ Less

Submitted 8 March, 2018; originally announced March 2018.

Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene

Authors: Yanmeng Shi, Shi Che, Kuan Zhou, Supeng Ge, Ziqi Pi, Timothy Espiritu, Takashi Taniguchi, Kenji Watanabe, Yafis Barlas, Roger Lake, Chun Ning Lau

Abstract: As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene that host two intersecting massive Dirac bands, we demonstrate multiple Lifshitz transitions and multiband transport, which manifest as non-monotonic dependence… ▽ More As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene that host two intersecting massive Dirac bands, we demonstrate multiple Lifshitz transitions and multiband transport, which manifest as non-monotonic dependence of conductivity on charge density n and out-of-plane electric fieldD, anomalous quantum Hall sequences and Landau level crossings that evolve with n, D and B. △ Less

Submitted 20 February, 2018; originally announced February 2018.

Comments: accepted to PRL

Long-Distance Spin Transport Through a Graphene Quantum Hall Antiferromagnet

Authors: Petr Stepanov, Shi Che, Dmitry Shcherbakov, Jiawei Yang, Kevin Thilahar, Greyson Voigt, Marc W. Bockrath, Dmitry Smirnov, Kenji Watanabe, Takashi Taniguchi, Roger K. Lake, Yafis Barlas, Allan H. MacDonald, Chun Ning Lau

Abstract: Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and electrical manipulation of antiferromagnetic order are much sought-after goals of spintronics research. Here, we report the first experimental evidence of robust lon… ▽ More Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and electrical manipulation of antiferromagnetic order are much sought-after goals of spintronics research. Here, we report the first experimental evidence of robust long-distance spin transport through an AFMI, in our case the gate-controlled, canted antiferromagnetic (CAF) state that appears at the charge neutrality point of graphene in the presence of an external magnetic field. Utilizing gate-controlled quantum Hall (QH) edge states as spin-dependent injectors and detectors, we observe large, non-local electrical signals across a 5 micron-long, insulating channel only when it is biased into the nu=0 CAF state. Among possible transport mechanisms, spin superfluidity in an antiferromagnetic state gives the most consistent interpretation of the non-local signal's dependence on magnetic field, temperature and filling factors. This work also demonstrates that graphene in the QH regime is a powerful model system for fundamental studies of antiferromagnetic, and in the case of a large in-plane field, ferromagnetic spintronics. △ Less

Submitted 22 January, 2018; originally announced January 2018.

Journal ref: Nature Physics (2018)

Surface Transport and Quantum Hall Effect in Ambipolar Black Phosphorus Double Quantum Wells

Authors: Son Tran, Jiawei Yang, Nathaniel Gillgren, Timothy Espiritu, Yanmeng Shi, Kenji Watanabe, Takashi Taniguchi, Seongphill Moon, Hongwoo Baek, Dmitry Smirnov, Marc Bockrath, Ruoyu Chen, Chun Ning Lau

Abstract: Quantum wells constitute one of the most important classes of devices in the study of 2D systems. In a double layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena such as Coulomb drag, Hall drag and exciton condensation. Here we demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contra… ▽ More Quantum wells constitute one of the most important classes of devices in the study of 2D systems. In a double layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena such as Coulomb drag, Hall drag and exciton condensation. Here we demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contrast to tradition QWs, each 2D layer is ambipolar, and can be tuned into n-doped, p-doped or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with enhanced Lande g-factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double or wide QWs with unusual properties such as high anisotropy. △ Less

Submitted 26 March, 2017; v1 submitted 14 March, 2017; originally announced March 2017.

Journal ref: Science Advances 3, e1603179 (2017)

Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2

Authors: J. Y. Liu, J. Hu, D. Graf, T. Zou, M. Zhu, Y. Shi, S. Che, S. M. A. Radmanesh, C. N. Lau, L. Spinu, H. B. Cao, X. Ke, Z. Q. Mao

Abstract: Relativistic fermions in topological quantum materials are characterized by linear energy-momentum dispersion near band crossing points. Under magnetic field, relativistic fermions acquire Berry phase of π in cyclotron motion, leading to a zeroth Landau level (LL) at the crossing point. Such field-independent zeroth LL, which distinguishes relativistic fermions from conventional electron systems,… ▽ More Relativistic fermions in topological quantum materials are characterized by linear energy-momentum dispersion near band crossing points. Under magnetic field, relativistic fermions acquire Berry phase of π in cyclotron motion, leading to a zeroth Landau level (LL) at the crossing point. Such field-independent zeroth LL, which distinguishes relativistic fermions from conventional electron systems, is hardly probed in transport measurements since the Fermi energy (EF) is usually not right at the band crossing points in most topological materials. Here we report the observation of exotic quantum transport behavior resulting from the zeroth LL in a multiband topological semimetal YbMnBi2 which possesses linear band crossings both at and away from the Fermi level (FL). We show that the Dirac bands with the crossing points being above or below the FL leads to Shubnikov de-Haas oscillations in the in-plane magnetoresistance, whereas the Dirac bands with the crossing points being at the FL results in unusual angular dependences of the out-of-plane magnetoresistance and in-plane Hall resistivity due to the dependence of the zeroth LL's degeneracy on field orientation. Our results shed light on the transport mechanism of the zeroth LL's relativistic fermions in layered materials. △ Less

Submitted 21 August, 2016; originally announced August 2016.

Journal ref: Nature Communications 8, 646 (2017)

Weak Localization and Electron-electron Interactions in Few Layer Black Phosphorus Devices

Authors: Yanmeng Shi, Nathaniel Gillgren, Timothy Espiritu, Son Tran, Jiawei Yang, Kenji Watanabe, Takahashi Taniguchi, Chun Ning Lau

Abstract: Few layer phosphorene(FLP) devices are extensively studied due to its unique electronic properties and potential applications on nano-electronics . Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing lengt… ▽ More Few layer phosphorene(FLP) devices are extensively studied due to its unique electronic properties and potential applications on nano-electronics . Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (~T-0.4). These results establish that the dominant scattering mechanism in FLP is electron-electron interactions. △ Less

Submitted 1 August, 2016; originally announced August 2016.

Comments: accepted by 2D Materials

Tunable symmetries of integer and fractional quantum Hall phases in heterostructures with multiple Dirac bands

Authors: Petr Stepanov, Yafis Barlas, Tim Espiritu, Shi Che, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Chun Ning Lau

Abstract: The co-presence of multiple Dirac bands in few-layer graphene leads to a rich phase diagram in the quantum Hall regime. Using transport measurements, we map the phase diagram of BN-encapsulated ABA-stacked trilayer graphene as a function charge density n, magnetic field B and interlayer displacement field D, and observe transitions among states with different spin, valley, orbital and parity polar… ▽ More The co-presence of multiple Dirac bands in few-layer graphene leads to a rich phase diagram in the quantum Hall regime. Using transport measurements, we map the phase diagram of BN-encapsulated ABA-stacked trilayer graphene as a function charge density n, magnetic field B and interlayer displacement field D, and observe transitions among states with different spin, valley, orbital and parity polarizations. Such rich pattern arises from crossings between Landau levels from different subbands, which reflect the evolving symmetries that are tunable in situ. At D=0, we observe fractional quantum Hall (FQH) states at filling factors 2/3 and -11/3. Unlike those in bilayer graphene, these FQH states are destabilized by a small interlayer potential that hybridizes the different Dirac bands. △ Less

Submitted 19 July, 2016; v1 submitted 13 July, 2016; originally announced July 2016.

Comments: accepted by PRL; corrected author list

Topological nodal-line fermions in ZrSiSe and ZrSiTe

Authors: ** Hu, Zhijie Tang, **yu Liu, Xue Liu, Yanglin Zhu, David Graf, Yanmeng Shi, Shi Che, Chun Ning Lau, Jiang Wei, Zhiqiang Mao

Abstract: The discovery of topological semimetal phase in three-dimensional (3D) systems is a new breakthrough in topological material research. Dirac nodal-line semimetal is one of the three topological semimetal phases discovered so far; it is characterized by linear band crossing along a line/loop, contrasted with the linear band crossing at discrete momentum points in 3D Dirac and Weyl semimetals. The s… ▽ More The discovery of topological semimetal phase in three-dimensional (3D) systems is a new breakthrough in topological material research. Dirac nodal-line semimetal is one of the three topological semimetal phases discovered so far; it is characterized by linear band crossing along a line/loop, contrasted with the linear band crossing at discrete momentum points in 3D Dirac and Weyl semimetals. The study of nodal-line semimetal is still at initial stage; only three material systems have been verified to host nodal line fermions until now, including PbTaSe2, PtSn 4and ZrSiS. In this letter, we report evidence of nodal line fermions in ZrSiSe and ZrSiTe probed in de Haas - van Alphen (dHvA) quantum oscillations. Although ZrSiSe and ZrSiTe share similar layered structure with ZrSiS, our measurements of angular dependences of dHvA oscillations indicate the Fermi surface (FS) enclosing Dirac nodal line is of 2D character in ZiSiTe, in contrast with 3D-like FS in ZrSiSe and ZrSiS. Another important property revealed in our experiment is that the nodal line fermion density in ZrSi(S/Se) (~ 10^20-10^21 cm^-3) is much higher than the Dirac/Weyl fermion density of any known topological materials. In addition, we have demonstrated ZrSiSe and ZrSiTe single crystals can be thinned down to 2D atomic thin layers through microexfoliation, which offers a promising platform to verify the predicted 2D topological insulator in the monolayer materials with ZrSiS-type structure △ Less

Submitted 23 April, 2016; originally announced April 2016.

Journal ref: Phys. Rev. Lett. 117, 016602 (2016)

Tunable plasmonic reflection by bound 1D electron states in a 2D Dirac metal

Authors: Bor-Yuan Jiang, Guangxin Ni, Cheng Pan, Zhe Fei, Bin Cheng, Chun Ning Lau, Marc Bockrath, Dimitri N. Basov, Michael M. Fogler

Abstract: We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical conductivity caused by optical transitions involving these bound states. We propose that the bound states can be systematically created, controlled, and liquidate… ▽ More We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical conductivity caused by optical transitions involving these bound states. We propose that the bound states can be systematically created, controlled, and liquidated by an ultranarrow electrostatic gate. Using infrared nanoimaging, we obtain experimental evidence for the locally enhanced conductivity of graphene induced by a carbon nanotube gate, which supports this theoretical concept. △ Less

Submitted 15 June, 2016; v1 submitted 9 February, 2016; originally announced February 2016.

Comments: 14 pages, 12 figures, submitted to PRL

Journal ref: Phys. Rev. Lett. 117, 086801 (2016)

Energy gaps and layer polarization of integer and fractional quantum Hall states in bilayer graphene

Authors: Yanmeng Shi, Yong** Lee, Shi Che, Ziqi Pi, Timothy Espiritu, Petr Stepanov, Dmitry Smirnov, Chun Ning Lau, Fan Zhang

Abstract: Owing to the spin, valley, and orbital symmetries, the lowest Landau level (LL) in bilayer graphene exhibits multicomponent quantum Hall ferromagnetism. Using transport spectroscopy, we investigate the energy gaps of integer and fractional quantum Hall states in bilayer graphene with controlled layer polarization. The state at filling factor ν=1 has two distinct phases: a layer polarized state tha… ▽ More Owing to the spin, valley, and orbital symmetries, the lowest Landau level (LL) in bilayer graphene exhibits multicomponent quantum Hall ferromagnetism. Using transport spectroscopy, we investigate the energy gaps of integer and fractional quantum Hall states in bilayer graphene with controlled layer polarization. The state at filling factor ν=1 has two distinct phases: a layer polarized state that has a larger energy gap and is stabilized by high electric field, and a hitherto unobserved interlayer coherent state with a smaller gap that is stabilized by large magnetic field. In contrast, the ν=2/3 quantum Hall state and a feature at ν=1/2 are only resolved at finite electric field and large magnetic field. These results underscore the importance of controlling layer polarization in understanding the competing symmetries in the unusual QH system of BLG. △ Less

Submitted 15 January, 2016; originally announced January 2016.

Tunneling Plasmonics in Bilayer Graphene

Authors: Z. Fei, E. G. Iwinski, G. X. Ni, L. M. Zhang, W. Bao, A. S. Rodin, Y. Lee, M. Wagner, M. K. Liu, S. Dai, M. D. Goldflam, M. Thiemens, F. Keilmann, C. N. Lau, A. H. Castro-Neto, M. M. Fogler, D. N. Basov

Abstract: We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter.… ▽ More We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nano-imaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tunneling. Moreover, we were able to shut off plasmons in bilayer graphene through gating within a wide voltage range. Theoretical modeling indicates that such a plasmon-off region is directly linked to a gapped insulating state of bilayer graphene: yet another implication of interlayer tunneling. Our work uncovers essential plasmonic properties in bilayer graphene and suggests a possibility to achieve novel plasmonic functionalities in graphene few-layers. △ Less

Submitted 31 August, 2015; originally announced August 2015.

Comments: 27 pages, 11 figures

Journal ref: Nano Lett. 15, 4973-4978 (2015)

Generation of photovoltage in graphene on a femtosecond time scale through efficient carrier heating

Authors: Klaas-Jan Tielrooij, Lukasz Piatkowski, Mathieu Massicotte, Achim Woessner, Qiong Ma, Yong** Lee, Kevin Scott Myhro, Chun Ning Lau, Pablo Jarillo-Herrero, Niek F. van Hulst, Frank H. L. Koppens

Abstract: Graphene is a promising material for ultrafast and broadband photodetection. Earlier studies addressed the general operation of graphene-based photo-thermoelectric devices, and the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds. However, the generation of the photovoltage could occur at a much faster time scale, as it is associated with the carrie… ▽ More Graphene is a promising material for ultrafast and broadband photodetection. Earlier studies addressed the general operation of graphene-based photo-thermoelectric devices, and the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds. However, the generation of the photovoltage could occur at a much faster time scale, as it is associated with the carrier heating time. Here, we measure the photovoltage generation time and find it to be faster than 50 femtoseconds. As a proof-of-principle application of this ultrafast photodetector, we use graphene to directly measure, electrically, the pulse duration of a sub-50 femtosecond laser pulse. The observation that carrier heating is ultrafast suggests that energy from absorbed photons can be efficiently transferred to carrier heat. To study this, we examine the spectral response and find a constant spectral responsivity between 500 and 1500 nm. This is consistent with efficient electron heating. These results are promising for ultrafast femtosecond and broadband photodetector applications. △ Less

Submitted 24 April, 2015; originally announced April 2015.

Comments: 6 pages, 4 figures

Journal ref: Nature Nanotechnology 10, 437-443 (2015)

Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures

Authors: Nathaniel Gillgren, Darshana Wickramaratne, Yanmeng Shi, Tim Espiritu, Jiawei Yang, ** Hu, Jiang Wei, Xue Liu, Zhiqiang Mao, Kenji Watanabe, Takashi Taniguchi, Marc Bockrath, Yafis Barlas, Roger K. Lake, Chun Ning Lau

Abstract: As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional (1D) edge contacts. These transistors are stable in ambient conditions for >3… ▽ More As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional (1D) edge contacts. These transistors are stable in ambient conditions for >300 hours, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 $cm^2$/Vs. At low temperatures, we observe gate-tunable Shubnikov de Haas (SdH) magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor ~2. The cyclotron mass of few-layer phosphorene holes is determined to increase from 0.25 to 0.31 $m_e$ as the Fermi level moves towards the valence band edge. Our results underscore the potential of few-layer phosphorene (FLP) as both a platform for novel 2D physics and an electronic material for semiconductor applications. △ Less

Submitted 3 December, 2014; v1 submitted 1 December, 2014; originally announced December 2014.

Comments: minor correction of typos, equations and references

Journal ref: 2D Materials, 2, 011001 (2015)

Multicomponent Quantum Hall Ferromagnetism and Landau Level Crossing in Rhombohedral Trilayer Graphene

Authors: Y. Lee, D. Tran, K. Myhro, J. Velasco Jr., N. Gillgren, J. M. Poumirol, D. Smirnov, Y. Barlas, C. N. Lau

Abstract: Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital pseudospin and layer pseudospins of the lowest Landau level form spontaneous ordering. We observe intermediate quantum Hall plateaus, indicating a complete lifting of the degeneracy of the zeroth Landau level (LL) in the… ▽ More Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital pseudospin and layer pseudospins of the lowest Landau level form spontaneous ordering. We observe intermediate quantum Hall plateaus, indicating a complete lifting of the degeneracy of the zeroth Landau level (LL) in the hole-doped regime. In charge neutral r-TLG, the orbital degeneracy is broken first, and the layer degeneracy is broken last and only the in presence of an interlayer potential U. In the phase space of U and filling factor, we observe an intriguing hexagon pattern, which is accounted for by a model based on crossings between symmetry-broken LLs. △ Less

Submitted 16 January, 2016; v1 submitted 12 June, 2014; originally announced June 2014.

Journal ref: Nano Letters,16, 227 (2016)

Distinct Competing Ordered ν=2 States in Bilayer Graphene

Authors: J. Velasco Jr., Y. Lee, Fan Zhang, Kevin Myhro, David Tran, Michael Deo, Dmitry Smirnov, A. H. MacDonald, C. N. Lau

Abstract: Because of its large density-of-states and the 2π Berry phase near its low-energy band-contact points, neutral bilayer graphene (BLG) at zero magnetic field (B) is susceptible to chiral-symmetry breaking, leading to a variety of gapped spontaneous quantum Hall states distinguished by valley and spin-dependent quantized Hall conductivities. Among these, the layer antiferromagnetic state, which has… ▽ More Because of its large density-of-states and the 2π Berry phase near its low-energy band-contact points, neutral bilayer graphene (BLG) at zero magnetic field (B) is susceptible to chiral-symmetry breaking, leading to a variety of gapped spontaneous quantum Hall states distinguished by valley and spin-dependent quantized Hall conductivities. Among these, the layer antiferromagnetic state, which has quantum valley Hall (QVH) effects of opposite sign for opposite spins, appears to be the thermodynamic ground state. Though other gapped states have not been observed experimentally at B=0, they can be explored by exploiting their adiabatic connection to quantum Hall states with the same total Hall conductivity σH. In this paper, by using a magnetic field to select filling factor ν=2 states with σH=2e^2/h, we demonstrate the presence of a quantum anomalous Hall (QAH) state for the majority spin, and a Kekulé state with spontaneous valley coherence and a quantum valley Hall state for the minority spin in BLG. By providing the first spectroscopic map** of spontaneous Hall states at ν=2, our results shed further light on the rich set of competing ordered states in BLG. △ Less

Submitted 2 March, 2014; originally announced March 2014.

Journal ref: Nature Communications, 5, 4550 (2014)

Giant Interaction-Induced Gap and Electronic Phases in Rhombohedral Trilayer Graphene

Authors: Y. Lee, D. Tran, K. Myhro, J. Velasco Jr., N. Gillgren, C. N. Lau, Y. Barlas, J. M. Poumirol, D. Smirnov, F. Guinea

Abstract: Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in spontaneous symmetry breaking, which is responsible for a large class of physical phenomena ranging from mass generation in high energy physics to correlated s… ▽ More Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in spontaneous symmetry breaking, which is responsible for a large class of physical phenomena ranging from mass generation in high energy physics to correlated states such as superconductivity and magnetism in condensed matter. Here, using transport measurements, we show that rhombohedral-stacked trilayer graphene (r-TLG) offers a simple, yet novel and tunable, platform for study of various phases with spontaneous or field-induced broken symmetries. Here, we show that, contrary to predictions by tight-binding calculations, rhombohedral-stacked trilayer graphene (r-TLG) is an intrinsic insulator, with a giant interaction-induced gap Δ~42meV. This insulating state is a spontaneous layer antiferromagnetic with broken time reversal symmetry, and can be suppressed by increasing charge density n, an interlayer potential, a parallel magnetic field, or a critical temperature Tc~38K. This gapped collective state can be explored for switches with low input power and high on/off ratio. △ Less

Submitted 26 February, 2014; originally announced February 2014.

Ultrafast and Nanoscale Plasmonic Phenomena in Exfoliated Graphene Revealed by Infrared Pump-Probe Nanoscopy

Authors: Martin Wagner, Zhe Fei, Alexander S. McLeod, Aleksandr S. Rodin, Wenzhong Bao, Eric G. Iwinski, Zeng Zhao, Michael Goldflam, Mengkun Liu, Gerardo Dominguez, Mark Thiemens, Michael M. Fogler, Antonio H. Castro Neto, Chun Ning Lau, Sergiu Amarie, Fritz Keilmann, D. N. Basov

Abstract: Pump-probe spectroscopy is central for exploring ultrafast dynamics of fundamental excitations, collective modes and energy transfer processes. Typically carried out using conventional diffraction-limited optics, pump-probe experiments inherently average over local chemical, compositional, and electronic inhomogeneities. Here we circumvent this deficiency and introduce pump-probe infrared spectros… ▽ More Pump-probe spectroscopy is central for exploring ultrafast dynamics of fundamental excitations, collective modes and energy transfer processes. Typically carried out using conventional diffraction-limited optics, pump-probe experiments inherently average over local chemical, compositional, and electronic inhomogeneities. Here we circumvent this deficiency and introduce pump-probe infrared spectroscopy with ~20 nm spatial resolution, far below the diffraction limit, which is accomplished using a scattering scanning near-field optical microscope (s-SNOM). This technique allows us to investigate exfoliated graphene single-layers on SiO2 at technologically significant mid-infrared (MIR) frequencies where the local optical conductivity becomes experimentally accessible through the excitation of surface plasmons via the s-SNOM tip. Optical pum** at near-infrared (NIR) frequencies prompts distinct changes in the plasmonic behavior on 200 femtosecond (fs) time scales. The origin of the pump-induced, enhanced plasmonic response is identified as an increase in the effective electron temperature up to several thousand Kelvin, as deduced directly from the Drude weight associated with the plasmonic resonances. △ Less

Submitted 24 February, 2014; originally announced February 2014.

Comments: 27 pages (including Supporting Information), 8 figures

Journal ref: Nano Letters 14, 894 (2014)

Organometallic Hexahapto Functionalization of Single Layer Graphene as a Route to High Mobility Graphene Devices

Authors: Santanu Sarkar, Hang Zhang, Jhao-Wun Huang, Fenglin Wang, Elena Bekyarova, Chun Ning Lau, Robert C. Haddon

Abstract: Organometallic hexahapto chromium metal complexation of single layer graphene, which involves constructive rehybridization of the graphene pi-system with the vacant chromium d orbital, leads to field effect devices which retain a high degree of the mobility with enhanced on-off ratio. This hexahapto mode of bonding between metal and graphene is quite distinct from the modification in electronic st… ▽ More Organometallic hexahapto chromium metal complexation of single layer graphene, which involves constructive rehybridization of the graphene pi-system with the vacant chromium d orbital, leads to field effect devices which retain a high degree of the mobility with enhanced on-off ratio. This hexahapto mode of bonding between metal and graphene is quite distinct from the modification in electronic structure induced by conventional covalent sigma-bond formation with creation of sp3 carbon centers in graphene lattice and this chemistry is reversible. △ Less

Submitted 6 August, 2013; originally announced August 2013.

Comments: 18 pages, 10 figures, Adv. Mat. 2013, 25, 1131-1136

Journal ref: Sarkar, S. Adv. Mat. 2013, 25, 1131-1136

Transport in Suspended Monolayer and Bilayer Graphene Under Strain: A New Platform for Material Studies

Authors: Hang Zhang, Jhao-Wun Huang, Jairo Velasco Jr, Kevin Myhro, Matt Maldonado, David Dung Tran, Zeng Zhao, Fenglin Wang, Yong** Lee, Gang Liu, Wenzhong Bao, Chun Ning Lau

Abstract: We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mobility and conductance responses to strain were observed for single layer and bilayer samples. These types of devices can be extended to other 2D membranes such as MoS2, providing transport, optical or other measurements… ▽ More We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mobility and conductance responses to strain were observed for single layer and bilayer samples. These types of devices can be extended to other 2D membranes such as MoS2, providing transport, optical or other measurements with in situ strain. △ Less

Submitted 6 August, 2013; originally announced August 2013.

Transport Measurement of Landau level Gaps in Bilayer Graphene

Authors: J. Velasco Jr., Y. Lee, Z. Zhao, Lei **g, P. Kratz, Marc Bockrath, C. N. Lau

Abstract: Landau level gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy measurements of LL gaps in double-gated suspended BLG with high mobilities in the quantum Hall regime. By using bias as a spectroscopic tool, we measure the gap Δ for the quantum Hall (QH) state at filling factor ν={\pm… ▽ More Landau level gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy measurements of LL gaps in double-gated suspended BLG with high mobilities in the quantum Hall regime. By using bias as a spectroscopic tool, we measure the gap Δ for the quantum Hall (QH) state at filling factor ν={\pm}4 and -2. The single-particle gap for ν=4 scales linearly with magnetic field B and is independent of the out-of-plane electric field E. For the symmetry-broken ν=-2 state, the measured values of gap are 1.1 meV/T and 0.17 meV/T for singly-gated geometry and dual-gated geometry at E=0, respectively. The difference between the two values arises from the E-dependence of the gap, suggesting that the ν=-2 state is layer polarized. Our studies provide the first measurements of the gaps of the broken symmetry QH states in BLG with well-controlled E, and establish a robust method that can be implemented for studying similar states in other layered materials. △ Less

Submitted 14 January, 2014; v1 submitted 14 March, 2013; originally announced March 2013.

Comments: revised figures and discussion

Journal ref: Nano Letters, 14, 1324 (2014)

Local Spectroscopy of the Electrically Tunable Band Gap in Trilayer Graphene

Authors: Matthew Yankowitz, Fenglin Wang, Chun Ning Lau, Brian J. LeRoy

Abstract: The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a wi… ▽ More The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a widely tunable band gap as a function of electric field. However, we find that charged impurities in the underlying substrate cause substantial spatial fluctuation of the gap size. Our work elucidates the microscopic behavior of trilayer graphene and its consequences for macroscopic devices. △ Less

Submitted 8 April, 2013; v1 submitted 11 January, 2013; originally announced January 2013.

Journal ref: Phys. Rev. B 87, 165102 (2013)

Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene

Authors: Yong** Lee, Jairo Velasco Jr, David Tran, Fan Zhang, Wenzhong Bao, Lei **g, Kevin Myhro, Dmitry Smirnov, Chun Ning Lau

Abstract: We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν=-8, -2, 2, 6, and 10, in agreement with the full-parameter tight binding calculations. In high magnetic fields, odd-integer plateaus are also resolved, indicating almost complete lifting of the 12-fold degeneracy of the lowest Land… ▽ More We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν=-8, -2, 2, 6, and 10, in agreement with the full-parameter tight binding calculations. In high magnetic fields, odd-integer plateaus are also resolved, indicating almost complete lifting of the 12-fold degeneracy of the lowest Landau levels (LL). Under an out-of-plane electric field E, we observe degeneracy breaking and transitions between QH plateaus. Interestingly, depending on its direction, E selectively breaks the LL degeneracies in the electron-doped or hole-doped regimes. Our results underscore the rich interaction-induced phenomena in trilayer graphene. △ Less

Submitted 29 October, 2012; v1 submitted 24 October, 2012; originally announced October 2012.

Quantum transport in double-gated graphene devices

Authors: J. Velasco Jr., Y. Lee, L. **g, G. Liu, W. Bao, C. N. Lau

Abstract: Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top gates. In zero magnetic fields, we observe formation of pnp junctions with tunable polarity and charge densities, as well as a tunable band gap in bilayer graphen… ▽ More Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top gates. In zero magnetic fields, we observe formation of pnp junctions with tunable polarity and charge densities, as well as a tunable band gap in bilayer graphene and a tunable band overlap in trilayer graphene. In high magnetic fields, the devices' conductance are quantized at integer and fractional values of conductance quantum, and the data are in good agreement with a model based on edge state equilibration at pn interfaces. △ Less

Submitted 24 July, 2012; originally announced July 2012.

Journal ref: Solid State Communications, 152, 1301 (2012)

Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions

Authors: Hang Zhang, Wenzhong Bao, Zeng Zhao, Jhao-Wun Huang, Brian Standley, Gang Liu, Fenglin Wang, Philip Kratz, Lei **g, Marc Bockrath, Chun Ning Lau

Abstract: Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of 2.5V~4.5V corresponding to an ON pulse and voltages ~8V corresponding to OFF pulses. Electron microscope imaging of the devices shows that the graphene sheets typica… ▽ More Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of 2.5V~4.5V corresponding to an ON pulse and voltages ~8V corresponding to OFF pulses. Electron microscope imaging of the devices shows that the graphene sheets typically remain suspended and that the device conductance tends to zero when the observed gap is large. The switching rate is strongly temperature dependent, which rules out a purely electromechanical switching mechanism. This observed switching in suspended graphene devices strongly suggests a switching mechanism via atomic movement and/or chemical rearrangement, and underscores the potential of all-carbon devices for integration with graphene electronics. △ Less

Submitted 1 May, 2012; originally announced May 2012.

Comments: in situ SEM videos are available on Nano letters website

Journal ref: Nano Lett., 2012, 12 (4), pp 1772-1775

Gate-tuning of graphene plasmons revealed by infrared nano-imaging

Authors: Z. Fei, A. S. Rodin, G. O. Andreev, W. Bao, A. S. McLeod, M. Wagner, L. M. Zhang, Z. Zhao, G. Dominguez, M. Thiemens, M. M. Fogler, A. H. Castro-Neto, C. N. Lau, F. Keilmann, D. N. Basov

Abstract: Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning o… ▽ More Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning of its electronic and optical properties with gate voltage. Through infrared nano-imaging we explicitly show that common graphene/SiO2/Si back-gated structures support propagating surface plasmons. The wavelength of graphene plasmons is of the order of 200 nm at technologically relevant infrared frequencies, and they can propagate several times this distance. We have succeeded in altering both the amplitude and wavelength of these plasmons by gate voltage. We investigated losses in graphene using plasmon interferometry: by exploring real space profiles of plasmon standing waves formed between the tip of our nano-probe and edges of the samples. Plasmon dissipation quantified through this analysis is linked to the exotic electrodynamics of graphene. Standard plasmonic figures of merits of our tunable graphene devices surpass that of common metal-based structures. △ Less

Submitted 31 May, 2012; v1 submitted 22 February, 2012; originally announced February 2012.

Comments: 15 pages, 3 figures

Journal ref: Nature (2012) 487,82-85

Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene

Authors: Wenzhong Bao, Jairo Velasco Jr, Fan Zhang, Lei **g, Brian Standley, Dmitry Smirnov, Marc Bockrath, Allan MacDonald, Chun Ning Lau

Abstract: Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a large number of singly- and doubly-gated bilayer graphene (BLG) devices, we show that an insulating state appears only in devices with high mobility and low extri… ▽ More Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a large number of singly- and doubly-gated bilayer graphene (BLG) devices, we show that an insulating state appears only in devices with high mobility and low extrinsic do**. This insulating state has an associated transition temperature Tc~5K and an energy gap of ~3 meV, thus strongly suggesting a gapped broken symmetry state that is destroyed by very weak disorder. The transition to the intrinsic broken symmetry state can be tuned by disorder, out-of-plane electric field, or carrier density. △ Less

Submitted 15 February, 2012; originally announced February 2012.

Journal ref: Proc. Nat. Acad. Sci., 109, 10802 (2012)

Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Authors: Hang Zhang, Elena Bekyarova, Jhao-Wun Huang, Zeng Zhao, Wenzhong Bao, Fenglin Wang, Robert C. Haddon, Chun Ning Lau

Abstract: Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that non-suspended functionalized graphene behaves as a granular metal, with variable range hop** transport and a mobility gap ~… ▽ More Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that non-suspended functionalized graphene behaves as a granular metal, with variable range hop** transport and a mobility gap ~ 0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a gapped semiconductor, in which charge transport occurs via thermal activation over a gap ~ 80 meV. This non-invasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices. △ Less

Submitted 20 January, 2012; originally announced January 2012.

Journal ref: Nano Letters, 11, 4047 (2011)