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Proximity Effect in Periodic Arrays of Superconducting Nanoislands on Thin Graphite Layer
Authors:
Yu. I. Latyshev,
A. M. Smolovich,
A. P. Orlov,
A. V. Frolov,
V. S. Vlasenko
Abstract:
The regular structure of superconducting nanoislands of alloy W-Ga-C was fabricated on nanothin graphite using focused ion beam. The resistance vs temperature dependence down to 1.7K and the magnetoresistance in field up to 24T were measured both for the bridge containing nanoislands and for the reference bridge without islands. The difference between those measurements demonstrates the proximity…
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The regular structure of superconducting nanoislands of alloy W-Ga-C was fabricated on nanothin graphite using focused ion beam. The resistance vs temperature dependence down to 1.7K and the magnetoresistance in field up to 24T were measured both for the bridge containing nanoislands and for the reference bridge without islands. The difference between those measurements demonstrates the proximity effect on a regular structure of superconducting W-Ga-C nanoislands on nanothin graphite layer.
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Submitted 16 July, 2015;
originally announced July 2015.
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Transport of Massless Dirac Fermions in Non-topological Type Edge States
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties…
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There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties of the surface. We study the problem of the conductivity of Tamm-Shockley edge states through direct transport experiments. Aharonov-Bohm magneto-oscillations of resistance are found on graphene samples that contain a single nanohole. The effect is explained by the conductivity of the massless Dirac fermions in the edge states cycling around the nanohole. The results demonstrate the deep connection between topological and non-topological edge states in 2D systems of massless Dirac fermions.
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Submitted 4 March, 2015;
originally announced March 2015.
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Orbital Quantization in a System of Edge Dirac Fermions in Nanoperforated Graphene
Authors:
Yu. I. Latyshev,
A. P. Orlov,
A. V. Frolov,
V. A. Volkov,
I. V. Zagorodnev,
V. A. Skuratov,
Yu. V. Petrov,
O. F. Vyvenko,
D. Yu. Ivanov,
M. Konczykowski,
P. Monceau
Abstract:
The dependence of the electric resistance R of nanoperforated graphene samples on the position of the Fermi level, which is varied by the gate voltage Vg, has been studied. Nanoperforation has been performed by irradiating graphene samples on a Si/SiO$_2$ substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the R(Vg) dependence at low temperatures in z…
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The dependence of the electric resistance R of nanoperforated graphene samples on the position of the Fermi level, which is varied by the gate voltage Vg, has been studied. Nanoperforation has been performed by irradiating graphene samples on a Si/SiO$_2$ substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the R(Vg) dependence at low temperatures in zero magnetic field. These peaks are attributed to the passage of the Fermi level through an equidistant ladder of levels formed by orbitally quantized states of edge Dirac fermions rotating around each nanohole. The results are in agreement with the theory of edge states for massless Dirac fermions.
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Submitted 4 March, 2015;
originally announced March 2015.
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Aharonov-Bohm resistance magneto-oscillations on single-nanohole graphite and graphene structures
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from…
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Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from the magnetic edge states caused by skip** cyclotron orbits. The Tamm states result from breaking of periodic crystal potential at the edge, they can exist even at zero magnetic field and form a conducting band. Until recently those states have been observed in graphene only by local STM technique and there were no direct experiments on their contribution to transport measurements. Here we present the experiments on Aharonov-Bohm (AB) oscillations of resistance in a single-nanohole graphite and graphene structures, it indicates the presence of conducting edge states cycling around nanohole. An estimation show the penetration depth of the edge states to be as short as about 2 nm. The oscillations persist up to temperature T=115 K and the T-range of their existence increases with a decrease of the nanohole diameter. The proposed mechanism of the AB oscillations based on the resonant intervalley backscattering of the Dirac fermions by the nanohole via the Tamm states. The experimental results are consistent with such a scenario. Our findings show a way towards interference devices operating at high temperatures on the edge states in graphene
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Submitted 3 October, 2013;
originally announced October 2013.
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Interlayer tunneling spectroscopy of graphite at high magnetic field oriented parallel to the layers
Authors:
Yu. I. Latyshev,
A. P. Orlov,
P. Monceau,
D. Vignolles,
Sergey S. Pershoguba,
Victor M. Yakovenko
Abstract:
Interlayer tunneling in graphite mesa-type structures is studied at a strong in-plane magnetic field $H$ up to 55 T and low temperature $T=1.4$ K. The tunneling spectrum $dI/dV$ vs. $V$ has a pronounced peak at a finite voltage $V_0$. The peak position $V_0$ increases linearly with $H$. To explain the experiment, we develop a theoretical model of graphite in the crossed electric $E$ and magnetic…
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Interlayer tunneling in graphite mesa-type structures is studied at a strong in-plane magnetic field $H$ up to 55 T and low temperature $T=1.4$ K. The tunneling spectrum $dI/dV$ vs. $V$ has a pronounced peak at a finite voltage $V_0$. The peak position $V_0$ increases linearly with $H$. To explain the experiment, we develop a theoretical model of graphite in the crossed electric $E$ and magnetic $H$ fields. When the fields satisfy the resonant condition $E=vH$, where $v$ is the velocity of the two-dimensional Dirac electrons in graphene, the wave functions delocalize and give rise to the peak in the tunneling spectrum observed in the experiment.
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Submitted 10 June, 2013; v1 submitted 19 December, 2012;
originally announced December 2012.
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Polarization resolved magneto-Raman scattering of graphene-like domains on natural graphite
Authors:
M. Kuhne,
C. Faugeras,
P. Kossacki,
A. A. L. Nicolet,
M. Orlita,
Yu. I. Latyshev,
M. Potemski
Abstract:
The micro-Raman scattering response of a graphene-like location on the surface of bulk natural graphite is investigated both at $T=\unit{4.2}{K}$ and at room temperature in magnetic fields up to 29 T. Two different polarization configurations, co-circular and crossed-circular, are employed in order to determine the Raman scattering selection rules. Several distinct series of electronic excitations…
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The micro-Raman scattering response of a graphene-like location on the surface of bulk natural graphite is investigated both at $T=\unit{4.2}{K}$ and at room temperature in magnetic fields up to 29 T. Two different polarization configurations, co-circular and crossed-circular, are employed in order to determine the Raman scattering selection rules. Several distinct series of electronic excitations are observed and we discuss their characteristic shapes and amplitudes. In particular, we report a clear splitting of the signals associated with the inter-Landau level excitations $-n\rightarrow+n$. Furthermore, we observe the pronounced interaction of the zone-center E$_{\text{2g}}$-phonon with three different sets of electronic excitations. Possible origins for these graphene-like inclusions on the surface of bulk graphite are discussed.
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Submitted 8 March, 2012;
originally announced March 2012.
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Electronic excitations and electron-phonon coupling in bulk graphite through Raman scattering in high magnetic fields
Authors:
P. Kossacki,
C. Faugeras,
M. Kühne,
M. Orlita,
A. A. L. Nicolet,
J. M. Schneider,
D. M. Basko,
Y. I. Latyshev,
M. Potemski
Abstract:
We use polarized magneto-Raman scattering to study purely electronic excitations and the electron-phonon coupling in bulk graphite. At a temperature of 4.2 K and in magnetic fields up to 28 T we observe $K$-point electronic excitations involving Landau bands with $Δ|n|=0$ and with $Δ|n|=\pm2$ that can be selected by controlling the angular momentum of the excitation laser and of the scattered ligh…
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We use polarized magneto-Raman scattering to study purely electronic excitations and the electron-phonon coupling in bulk graphite. At a temperature of 4.2 K and in magnetic fields up to 28 T we observe $K$-point electronic excitations involving Landau bands with $Δ|n|=0$ and with $Δ|n|=\pm2$ that can be selected by controlling the angular momentum of the excitation laser and of the scattered light. The magneto-phonon effect involving the $E_{2g}$ optical phonon and $K$-point inter Landau bands electronic excitations with $Δ|n|=\pm1$ is revealed and analyzed within a model taking into account the full $k_z$ dispersion. These polarization resolved results are explained in the frame of the Slonczewski-Weiss-McClure (SWM) model which directly allows to quantify the electron-hole asymmetry.
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Submitted 19 October, 2011;
originally announced October 2011.
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Magneto-Raman scattering of graphene on graphite: Electronic and phonon excitations
Authors:
C. Faugeras,
M. Amado,
P. Kossacki,
M. Orlita,
M. Kühne,
A. A. L. Nicolet,
Yu. I. Latyshev,
M. Potemski
Abstract:
Magneto-Raman scattering experiments from the surface of graphite reveal novel features associated to purely electronic excitations which are observed in addition to phonon-mediated resonances. Graphene-like and graphite domains are identified through experiments with $\sim 1μm$ spatial resolution performed in magnetic fields up to 32T. Polarization resolved measurements emphasize the characterist…
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Magneto-Raman scattering experiments from the surface of graphite reveal novel features associated to purely electronic excitations which are observed in addition to phonon-mediated resonances. Graphene-like and graphite domains are identified through experiments with $\sim 1μm$ spatial resolution performed in magnetic fields up to 32T. Polarization resolved measurements emphasize the characteristic selection rules for electronic transitions in graphene. Graphene on graphite displays the unexpected hybridization between optical phonon and symmetric across the Dirac point inter Landau level transitions. The results open new experimental possibilities - to use light scattering methods in studies of graphene under quantum Hall effect conditions.
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Submitted 11 July, 2011; v1 submitted 10 January, 2011;
originally announced January 2011.
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Collective responses of Bi-2212 stacked junction to 100 GHz microwave radiation under magnetic field oriented along the c-axis
Authors:
V. N. Pavlenko,
Yu. I. Latyshev,
J. Chen,
M. B. Gaifullin,
A. Irzhak,
S. -J. Kim,
P. H. Wu
Abstract:
We studied a response of Bi-2212 mesa type structures to 100 GHz microwave radiation. We found that applying magnetic field of about 0.1 T across the layers enables to observe collective Shapiro step response corresponding to a synchronization of all 50 intrinsic Josephson junctions (IJJ) of the mesa. At high microwave power we observed up to 10th harmonics of the fundamental Shapiro step. Besid…
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We studied a response of Bi-2212 mesa type structures to 100 GHz microwave radiation. We found that applying magnetic field of about 0.1 T across the layers enables to observe collective Shapiro step response corresponding to a synchronization of all 50 intrinsic Josephson junctions (IJJ) of the mesa. At high microwave power we observed up to 10th harmonics of the fundamental Shapiro step. Besides, we found microwave induced flux-flow step position of which is proportional to the square root of microwave power and that can exceed at high enough powers 1 THz operating frequency of IJJ oscillations.
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Submitted 11 February, 2009;
originally announced February 2009.
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Anomalous asymmetry of magnetoresistance in NbSe$_3$ single crystals
Authors:
A. A. Sinchenko,
Yu. I. Latyshev,
A. P. Orlov,
P. Monceau
Abstract:
A pronounced asymmetry of magnetoresistance with respect to the magnetic field direction is observed for NbSe$_3$ crystals placed in a magnetic field perpendicular to their conducting planes. It is shown that the effect persists in a wide temperature range and manifests itself starting from a certain magnetic induction value $B_0$, which at $T=4.2$ K corresponds to the transition to the quantum…
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A pronounced asymmetry of magnetoresistance with respect to the magnetic field direction is observed for NbSe$_3$ crystals placed in a magnetic field perpendicular to their conducting planes. It is shown that the effect persists in a wide temperature range and manifests itself starting from a certain magnetic induction value $B_0$, which at $T=4.2$ K corresponds to the transition to the quantum limit, i.to the state where the Landay level splitting exceeds the temperature.
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Submitted 8 October, 2006;
originally announced October 2006.
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Slowing down Josephson vortex lattice in Bi_2Sr_2CaCu_2O_{8+d} with pancake vortices
Authors:
A. E. Koshelev,
Yu. I. Latyshev,
M. Konczykowski
Abstract:
We study theoretically and experimentally influence of pancake vortices on motion of the Josephson vortex lattice in layered high-temperature superconductors. Mobility of the Josephson vortices in layered superconductors is strongly suppressed by small amount of pancake-vortex stacks. Moving Josephson vortex lattice forces oscillating zigzag deformation of the pancake-vortex stacks contributing…
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We study theoretically and experimentally influence of pancake vortices on motion of the Josephson vortex lattice in layered high-temperature superconductors. Mobility of the Josephson vortices in layered superconductors is strongly suppressed by small amount of pancake-vortex stacks. Moving Josephson vortex lattice forces oscillating zigzag deformation of the pancake-vortex stacks contributing to dam**. The salient feature of this contribution is its nonmonotonic dependence on the lattice velocity and the corresponding voltage. Maximum pancake effect is realized when the Josephson frequency matches the relaxation frequency of the stacks. The pancake-vortex dam** is strongly suppressed by thermal fluctuations of the pancake vortices. This theoretical picture was qualitatively confirmed by experiments on two mesas prepared out of Bi_2Sr_2CaCu_2O_{8+d} whiskers. We found that the Josephson-vortex flux-flow voltage is very sensitive to small c-axis magnetic field. The pancake-vortex contribution to the current indeed nonmonotonically depends on voltage and decreases with increasing temperature and in-plane magnetic field. We also found that irradiation with heavy ions has no noticeable direct influence on motion of the Josephson vortices but dramatically reduces the pancake-vortex contribution to the dam** of the Josephson vortex lattice at low temperatures.
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Submitted 13 September, 2006; v1 submitted 11 September, 2006;
originally announced September 2006.
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Josephson vortex lattice melting in Bi-2212 probed by commensurate oscillations of Josephson flux-flow
Authors:
Yu. I. Latyshev,
V. N. Pavlenko,
A. P. Orlov,
X. Hu
Abstract:
We studied the commensurate semi-fluxon oscillations of Josephson flux-flow (JFF) in a Bi-2212 stacked structures near $T_c$ as a probe of melting of Josephson vortex lattice (JVL). We found that oscillations exist above 0.5T. The amplitude of oscillations is found to decrease gradually with temperature and to turn to zero without any jump at $T=T_0$, 3.5K below the resistive transition temperat…
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We studied the commensurate semi-fluxon oscillations of Josephson flux-flow (JFF) in a Bi-2212 stacked structures near $T_c$ as a probe of melting of Josephson vortex lattice (JVL). We found that oscillations exist above 0.5T. The amplitude of oscillations is found to decrease gradually with temperature and to turn to zero without any jump at $T=T_0$, 3.5K below the resistive transition temperature $T_c$ indicating the phase transition of the second order. This characteristic temperature $T_0$ is identified as the Berezinskii-Kosterlitz-Thouless (BKT) transition temperature, $T_{BKT}$, in elementary superconducting layers of Bi-2212 at zero magnetic field. On the base of these facts we infer that melting of triangular Josephson vortex lattice occurs via the BKT phase with formation of characteristic flux loops containing pancake vortices and anti-vortices. The $B-T$ phase diagram of the BKT phase found out from our experiment is consistent with theoretical predictions.
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Submitted 19 July, 2005; v1 submitted 17 July, 2005;
originally announced July 2005.
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The c-axis transport in naturally-grown Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ cross-whisker junctions
Authors:
Yu. I. Latyshev,
A. P. Orlov,
A. M. Nikitina,
P. Monceau,
R. A. Klemm
Abstract:
We studied the c-axis transport of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212) cross-whisker junctions formed by annealing ``naturally'' formed whisker junctions. These frequently appear during growth when the $ab$-faces of neighboring whiskers come in contact. We obtained Fraunhofer patterns of the cross-junction critical currents in a parallel magnetic field, and found a sharp increase in the quasi…
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We studied the c-axis transport of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212) cross-whisker junctions formed by annealing ``naturally'' formed whisker junctions. These frequently appear during growth when the $ab$-faces of neighboring whiskers come in contact. We obtained Fraunhofer patterns of the cross-junction critical currents in a parallel magnetic field, and found a sharp increase in the quasiparticle tunneling conductance at $eV=50-60$ mV, indicating high junction quality. For our weak junctions, the interface critical current density is about 0.03 of the critical current density across the stack of bulk intrinsic junctions, as is the room temperature conductivity, and is independent of the twist angle, in contrast to most of the data reported on ``artificial'' cross-whisker junctions [Y. Takano {\it et al.}, Phys. Rev. B {\bf 65}, 140513(R) (2002)]. Our results provide strong evidence of incoherent interface tunneling and for at least a small s-wave order parameter component in the bulk of Bi2212 for $T\le T_c$. They are also consistent with the bicrystal twist experiments of Li {\it et al.} [Phys. Rev. Lett. {\bf 83}, 4160 (1999)].
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Submitted 20 May, 2004; v1 submitted 25 January, 2004;
originally announced January 2004.
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Probing quasiparticle dynamics in Bi2Sr2CaCu2O(8+delta) with a driven Josephson vortex lattice
Authors:
Yu. I. Latyshev,
A. E. Koshelev,
L. N. Bulaevskii
Abstract:
We show that the flux-flow transport of the Josephson vortex lattice (JVL) in layered high-temperature superconductors provides a convenient probe for both components of quasiparticle conductivity, $σ_{c}$ and $σ_{ab}$. We found that the JVL flux-flow resistivity, $ρ_{ff}$, in a wide range of magnetic fields is mainly determined by the in-plane dissipation. In the dense lattice regime ($B>1$ T)…
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We show that the flux-flow transport of the Josephson vortex lattice (JVL) in layered high-temperature superconductors provides a convenient probe for both components of quasiparticle conductivity, $σ_{c}$ and $σ_{ab}$. We found that the JVL flux-flow resistivity, $ρ_{ff}$, in a wide range of magnetic fields is mainly determined by the in-plane dissipation. In the dense lattice regime ($B>1$ T) $ρ_{ff}(B)$ dependence is well fitted by the theoretical formula for that limit. That allows us to independently extract from the experimental data the values of $σ_{c}$ and of the ratio $σ_{ab}/(σ_{c}γ^{4})$. The extracted temperature dependence $σ_{ab}(T)$ is consistent with microwave data. The shape of the current-voltage characteristics is also sensitive to the frequency dependence of $σ_{ab}$ and that allows us to estimate the quasiparticle relaxation time and relate it to the impurity bandwidth using data obtained for the same crystal.
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Submitted 17 July, 2003;
originally announced July 2003.
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Coherent Tunneling between Elementary Conducting Layers in the NbSe$_3$ Charge-Density-Wave Conductor
Authors:
Yu. I. Latyshev,
A. A. Sinchenko,
L. N. Bulaevskii,
V. N. Pavlenko,
P. Monceau
Abstract:
Characteristic features of transverse transport along the $a^*$ axis in the NbSe$_3$ charge-density-wave conductor are studied. At low temperatures, the $I$-$V$ characteristics of both layered structures and NbSe$_3$-NbSe$_3$ point contacts exhibit a strong peak of dynamic conductivity at zero bias voltage. In addition, the $I$-$V$ characteristics of layered structures exhibit a series of peaks…
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Characteristic features of transverse transport along the $a^*$ axis in the NbSe$_3$ charge-density-wave conductor are studied. At low temperatures, the $I$-$V$ characteristics of both layered structures and NbSe$_3$-NbSe$_3$ point contacts exhibit a strong peak of dynamic conductivity at zero bias voltage. In addition, the $I$-$V$ characteristics of layered structures exhibit a series of peaks that occur at voltages equal to multiples of the double Peierls gap. The conductivity behavior observed in the experiment resembles that reported for the interlayer tunneling in Bi-2212 high-$T_c$ superconductors. The conductivity peak at zero bias is explained using the model of almost coherent interlayer tunneling of the charge carriers that are not condensed in the charge density wave.
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Submitted 27 April, 2002; v1 submitted 26 April, 2002;
originally announced April 2002.
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Novel features of Josephson flux-flow in Bi-2212: contribution of in-plane dissipation, coherent response to mm-wave radiation, size effect
Authors:
Yu. I. Latyshev,
A. E. Koshelev,
V. N. Pavlenko,
M. Gaifullin,
T. Yamashita,
Y. Matsuda
Abstract:
We studied Josephson flux-flow (JFF) in Bi-2212 stacks fabricated from single crystal whiskers by focused ion beam technique. For long junctions with the in-plane sizes 30 x 2 (mu)m^2, we found considerable contribution of the in-plane dissipation to the JFF resistivity, (rho)_(Jff), at low temperatures. According to recent theory [A. Koshelev, Phys. Rev. B62, R3616 (2000)] that results in quadr…
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We studied Josephson flux-flow (JFF) in Bi-2212 stacks fabricated from single crystal whiskers by focused ion beam technique. For long junctions with the in-plane sizes 30 x 2 (mu)m^2, we found considerable contribution of the in-plane dissipation to the JFF resistivity, (rho)_(Jff), at low temperatures. According to recent theory [A. Koshelev, Phys. Rev. B62, R3616 (2000)] that results in quadratic type dependence of (rho)_(Jff)(B) with the following saturation. The I-V characteristics in JFF regime also can be described consistently by that theory. In JFF regime we found Shapiro-step response to the external mm-wave radiation. The step position is proportional to the frequency of applied microwaves and corresponds to the Josephson emission from all the 60 intrinsic junctions of the stack being synchronized. That implies the coherence of the JFF over the whole thickness of the stack and demonstrates possibility of synchronization of intrinsic junctions by magnetic field. We also found a threshold character of an appearance of the JFF branch on the I-V characteristic with the increase of magnetic field, the threshold field B_t being scaled with the junction size perpendicular to the field L (L = 30-1.4 (mu)m), as B_t = (Phi)_0/Ls, where (Phi)_0 is flux quantum, s is the interlayer spacing. On the I-V characteristics of small stacks in the JFF regime we found Fiske-step features associated with resonance of Josephson radiation with the main resonance cavity mode in transmission line formed by stack.
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Submitted 10 September, 2001;
originally announced September 2001.
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Critical current in charge-density wave transport
Authors:
A. A. Sinchenko,
V. Ya. Pokrovski,
S. G. Zybtsev,
I. G. Gorlova,
Yu. I. Latyshev,
P. Monceau
Abstract:
We report transport measurements under very high current densities $j$, up to $\sim10^8$~A/cm$^2$, of quasi-one-dimensional charge-density wave (CDW) conductors NbSe$_3$ and TaS$_3$. Joule heating has been minimized by using a point-contact configuration or by measuring samples with extremely small cross-sections. Above $j_c \approx 10^7$~A/cm$^2$ we find evidence for suppression of the Peierls…
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We report transport measurements under very high current densities $j$, up to $\sim10^8$~A/cm$^2$, of quasi-one-dimensional charge-density wave (CDW) conductors NbSe$_3$ and TaS$_3$. Joule heating has been minimized by using a point-contact configuration or by measuring samples with extremely small cross-sections. Above $j_c \approx 10^7$~A/cm$^2$ we find evidence for suppression of the Peierls gap and development of the metallic state. The critical CDW velocity corresponding with $j_0$ is comparable with the sound velocity, and with $Δ/ \hbar k_F$ ($k_F$ is the Fermi wave vector), which corresponds to the depairing current. Possible scenarios of the Peierls state destruction are discussed.
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Submitted 10 January, 2001;
originally announced January 2001.
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Quasiparticle and Cooper Pair Tunneling in the Vortex State of Bi-2212
Authors:
N. Morozov,
L. N. Bulaevskii,
M. P. Maley,
Yu. I. Latyshev,
T. Yamashita
Abstract:
From measurements of the c-axis I-V characteristics of intrinsic Josephson junctions in Bi_2Sr_2CaCu_2O_{8+delta} (Bi-2212) mesas we obtain the field dependence (H || c) of the quasiparticle (QP) conductivity, sigma_q(H,T), and of the Josephson critical current density, J_c(H,T). The quasiparticle conductivity sigma_q(H) increases sharply with H and reaches a plateau at 0.05 T <H< 0.3 T. We expl…
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From measurements of the c-axis I-V characteristics of intrinsic Josephson junctions in Bi_2Sr_2CaCu_2O_{8+delta} (Bi-2212) mesas we obtain the field dependence (H || c) of the quasiparticle (QP) conductivity, sigma_q(H,T), and of the Josephson critical current density, J_c(H,T). The quasiparticle conductivity sigma_q(H) increases sharply with H and reaches a plateau at 0.05 T <H< 0.3 T. We explain such behavior by the dual effect of supercurrents around vortices. First, they enhance the QP DOS, leading to an increase of sigma_q with H at low H and, second, they enhance the scattering rate for specular tunneling as pancakes become disordered along the c-axis at higher H, leading to a plateau at moderate H.
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Submitted 23 May, 2000;
originally announced May 2000.
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Interlayer Tunneling of Quasiparticles and Cooper Pairs in Bi-2212 Single Crystal Whiskers
Authors:
Yu. I. Latyshev,
V. N. Pavlenko,
S. -J. Kim,
T. Yamashita,
L. N. Bulaevskii,
M. J. Graf,
A. V. Balatsky,
N. Morozov,
M. P. Maley
Abstract:
The interlayer tunneling has been studied on high quality Bi-2212 stacks of micron to the submicron lateral size. We found that low temperature and low voltage tunneling I-V characteristics can be self-consistently described by Fermi-liquid model for a d-wave superconductor with a significant contribution from coherent interlayer tunneling. The gap and pseudogap interplay with variation of tempe…
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The interlayer tunneling has been studied on high quality Bi-2212 stacks of micron to the submicron lateral size. We found that low temperature and low voltage tunneling I-V characteristics can be self-consistently described by Fermi-liquid model for a d-wave superconductor with a significant contribution from coherent interlayer tunneling. The gap and pseudogap interplay with variation of temperature and magnetic field has been extracted from the I-V characteristics. We consider also the role of charging effects for submicron stacks.
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Submitted 5 May, 2000;
originally announced May 2000.
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High-Field Quasiparticle Tunneling in Bi_2Sr_2CaCu_2O_8+delta: Negative Magnetoresistance in the Superconducting State
Authors:
N. Morozov,
L. Krusin-Elbaum,
T. Shibauchi,
L. N. Bulaevskii,
M. P. Maley,
Yu. I. Latyshev,
T. Yamashita
Abstract:
We report on the c-axis resistivity rho_c(H) in Bi_2Sr_2CaCu_2O_{8+δ} that peaks in quasi-static magnetic fields up to 60 T. By suppressing the Josephson part of the two-channel (Cooper pair/quasiparticle) conductivity σ_c (H), we find that the negative slope of ρ_c(H) above the peak is due to quasiparticle tunneling conductivity σ_q(H) across the CuO_2 layers below H_{c2}. At high fields (a) σ_…
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We report on the c-axis resistivity rho_c(H) in Bi_2Sr_2CaCu_2O_{8+δ} that peaks in quasi-static magnetic fields up to 60 T. By suppressing the Josephson part of the two-channel (Cooper pair/quasiparticle) conductivity σ_c (H), we find that the negative slope of ρ_c(H) above the peak is due to quasiparticle tunneling conductivity σ_q(H) across the CuO_2 layers below H_{c2}. At high fields (a) σ_q(H) grows linearly with H, and (b) ρ_c(T) tends to saturate (sigma_c \neq 0) as T->0, consistent with the scattering at the nodes of the d-gap. A superlinear sigma_q(H) marks the normal state above T_c.
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Submitted 10 December, 1999;
originally announced December 1999.
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Interlayer Transport of Quasiparticles and Cooper pairs in Bi2Sr2CaCu2O8+y Superconductors
Authors:
Yu. I. Latyshev,
T. Yamashita,
L. N. Bulaevskii,
M. J. Graf,
A. V. Balatsky,
M. P. Maley
Abstract:
We study the c-axis transport of stacked, intrinsic junctions in Bi2Sr2CaCu2O8+y single crystals, fabricated by the double-sided ion beam processing technique from single crystal whiskers. Measurements of the I-V characteristics of these samples allow us to obtain the temperature and voltage dependence of the quasiparticle c-axis conductivity in the superconducting state, the Josephson critical…
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We study the c-axis transport of stacked, intrinsic junctions in Bi2Sr2CaCu2O8+y single crystals, fabricated by the double-sided ion beam processing technique from single crystal whiskers. Measurements of the I-V characteristics of these samples allow us to obtain the temperature and voltage dependence of the quasiparticle c-axis conductivity in the superconducting state, the Josephson critical current, and the superconducting gap. We show that the BCS d-wave model in the clean limit for resonant impurity scattering with a significant contribution from coherent interlayer tunneling, describes satisfactorily the low temperature and low energy c-axis transport of both quasiparticles and Cooper pairs.
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Submitted 16 March, 1999;
originally announced March 1999.
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Experimental Evidence for Coulomb Charging Effects in the Submicron Bi-2212 Stacks
Authors:
Yu. I. Latyshev,
S. -J. Kim,
T. Yamashita
Abstract:
We developed the focused ion beam (FIB) and ion milling techniques for a fabrication of the Bi_2Sr_2CaCu_2O_{8+δ} (Bi-2212) stacked junctions with in-plane size L_{ab} from several microns down to the submicron scale without degradation of T_c. We found that behaviour of submicron junctions (L_{ab} < 1 μm) is quite different from the bigger ones. The critical current density is considerably supp…
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We developed the focused ion beam (FIB) and ion milling techniques for a fabrication of the Bi_2Sr_2CaCu_2O_{8+δ} (Bi-2212) stacked junctions with in-plane size L_{ab} from several microns down to the submicron scale without degradation of T_c. We found that behaviour of submicron junctions (L_{ab} < 1 μm) is quite different from the bigger ones. The critical current density is considerably suppressed, the hysteresis and multibranched structure of the IV characteristics are eliminated, the periodic structure of current peaks reproducibly appears on the IV curves at low temperatures. A period of the structure, ΔV, is consistent with the Coulomb charging energy of a single pair, ΔV = e/C with C the effective capacitance of the stack. We consider this behaviour to originate from the Coulomb blockade of the intrinsic Josephson tunneling in submicron Bi-2212 stacks.
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Submitted 8 March, 1999;
originally announced March 1999.
