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Tuning superconductivity in nanosecond laser annealed boron doped $Si_{1-x}Ge_{x}$ epilayers
Authors:
S. Nath,
I. Turan,
L. Desvignes,
L. Largeau,
O. Mauguin,
M. Túnica,
M. Amato,
C. Renard,
G. Hallais,
D. Débarre,
F. Chiodi
Abstract:
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser do**, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Do**; 2) by ion implantation, followed by nanosecond laser ann…
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Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser do**, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Do**; 2) by ion implantation, followed by nanosecond laser annealing; 3) by UHV-CVD growth of a thin Ge layer, followed by nanosecond laser annealing. The 30 nm and 80 nm thick $Si_{1-x}Ge_{x}:B$ epilayers display superconducting critical temperatures $T_c$ tuned by B and Ge between 0 and 0.6 K. Within BCS weak-coupling theory, $T_c$ evolves exponentially with both the density of states and the electron-phonon potential. While B do** affects both, through the increase of the carrier density and the tensile strain, Ge incorporation allows addressing independently the lattice deformation influence on superconductivity. To estimate the lattice parameter modulation with B and Ge, Vegard's law is validated for the ternary $SiGeB$ bulk alloy by Density Functional Theory calculations. Its validity is furthermore confirmed experimentally by X-Ray Diffraction. We highlight a global linear dependence of $T_c$ vs. lattice parameter, common for both $Si:B$ and $Si_{1-x}Ge_{x}:B$, with $δT_c/T_c \sim 50\,\%$ for $δa/a \sim 1\,\%$.
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Submitted 3 April, 2024;
originally announced April 2024.
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Ferroelectricity in tetragonal ZrO$_2$ thin films
Authors:
Ali El Boutaybi,
Thomas Maroutian,
Ludovic Largeau,
Nathaniel Findling,
Jean-Blaise Brubach,
Rebecca Cervasio,
Alban Degezelle,
Sylvia Matzen,
Laurent Vivien,
Pascale Roy,
Panagiotis Karamanis,
Michel Rérat,
Philippe Lecoeur
Abstract:
We report on the crystal structure and ferroelectric properties of epitaxial ZrO$_2$ films ranging from 7 to 42 nm thickness grown on La$_{0.67}$Sr$_{0.33}$MnO$_3$-buffered (110)-oriented SrTiO$_3$ substrate. By employing X-ray diffraction, we confirm a tetragonal phase at all investigated thicknesses, with slight in-plane strain due to the substrate in the thinnest films. Further confirmation of…
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We report on the crystal structure and ferroelectric properties of epitaxial ZrO$_2$ films ranging from 7 to 42 nm thickness grown on La$_{0.67}$Sr$_{0.33}$MnO$_3$-buffered (110)-oriented SrTiO$_3$ substrate. By employing X-ray diffraction, we confirm a tetragonal phase at all investigated thicknesses, with slight in-plane strain due to the substrate in the thinnest films. Further confirmation of the tetragonal phase was obtained through Infrared absorption spectroscopy with synchrotron light, performed on ZrO$_2$ membrane transferred onto a high resistive Silicon substrate. Up to a thickness of 31 nm, the ZrO$_2$ epitaxial films exhibit ferroelectric behavior, at variance with the antiferroelectric behavior reported previously for the tetragonal phase in polycrystalline films. However, the ferroelectricity is found here to diminish with increasing film thickness, with a polarization of about 13 $μ$C.cm$^{-2}$ and down to 1 $μ$C.cm$^{-2}$ for 7 nm and 31 nm-thick ZrO$_2$ films, respectively. This highlights the role of thickness reduction, substrate strain, and surface effects in promoting polarization in the tetragonal ZrO$_2$ thin films. These findings provide new insights into the ferroelectric properties and structure of ZrO$_2$ thin films, and open up new directions to investigate the origin of ferroelectricity in ZrO$_2$ and to optimize this material for future applications.
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Submitted 31 July, 2023;
originally announced July 2023.
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Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO2 by surface energy
Authors:
Ali El Boutaybi,
Thomas Maroutian,
Ludovic Largeau,
Sylvia Matzen,
Philippe Lecoeur
Abstract:
Doped HfO2 and HfO2-ZrO2 compounds are gaining significant interest thanks to their ferroelectric properties in ultrathin films. Here, we show that ZrO2 could be a playground for do** and strain engineering to increase the thickness in epitaxial thin films. Based on surface energy considerations supported by ab initio calculations, we show that a pure ZrO2 epitaxial thin film exhibits a ferroele…
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Doped HfO2 and HfO2-ZrO2 compounds are gaining significant interest thanks to their ferroelectric properties in ultrathin films. Here, we show that ZrO2 could be a playground for do** and strain engineering to increase the thickness in epitaxial thin films. Based on surface energy considerations supported by ab initio calculations, we show that a pure ZrO2 epitaxial thin film exhibits a ferroelectric rhombohedral phase (r-phase, with R3m space group) more stable than for the Hf0.5Zr0.5O2 (HZO) and pure HfO2 cases. In particular, for a thickness up to 37 nm we experimentally evidence a single (111)-oriented r-phase in ZrO2 films deposited on La2/3Sr1/3MnO3-buffered DyScO3(110) substrate, while a tetragonal phase is observed alongside the rhombohedral one on SrTiO3(001). The formation of this r-phase is discussed and compared between HfO2, ZrO2 and HZO, highlighting the role of surface energy.
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Submitted 31 August, 2022; v1 submitted 9 November, 2021;
originally announced November 2021.
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Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Authors:
Konstantinos Pantzas,
Grégoire Beaudoin,
Myriam Bailly,
Aude Martin,
Arnaud Grisard,
Daniel Dolfi,
Olivia Mauguin,
Ludovic Largeau,
Isabelle Sagnes,
Gilles Patriarche
Abstract:
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense gri…
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The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense grid of micro-twins. These micro-twins detrimentally affectGaP and AlGaP layers grown subsequently on the template.
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Submitted 8 January, 2021;
originally announced January 2021.
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Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
Authors:
C. Cornet,
S. Charbonnier,
I. Lucci,
L. Chen,
A. Letoublon,
A. Alvarez,
K. Tavernier,
T. Rohel,
R. Bernard,
J. -B. Rodriguez,
L. Cerutti,
E. Tournie,
Y. Leger,
G. Patriarche,
L. Largeau,
A. Ponchet,
P. Turban,
N. Bertru
Abstract:
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given th…
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Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.
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Submitted 15 January, 2020;
originally announced January 2020.
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Al$_{5+α}$Si$_{5+δ}$N$_{12}$, a new Nitride compound
Authors:
R. Dagher,
L. Lymperakis,
V. Delaye,
L. Largeau,
A. Michon,
J Brault,
P. Vennegues
Abstract:
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT…
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We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>. The first one exhibits a $\times$3 periodicity along <10-10> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by equal number of Si and Al atoms. Assuming a semiconducting alloy, which is expected to have a wide band gap, a range of stoichiometries is proposed, Al$_{5+α}$Si$_{5+δ}$N$_{12}$, with $α$ being between 0 and 1/3 and $δ$ between 0 and 1/4.
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Submitted 22 March, 2019;
originally announced March 2019.
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A universal description of III-V/Si epitaxial growth processes
Authors:
I. Lucci,
S. Charbonnier,
L. Pedesseau,
M. Vallet,
L. Cerutti,
J. -B. Rodriguez,
E. Tournie,
R. Bernard,
A. Letoublon,
N. Bertru,
A. Le Corre,
S. Rennesson,
F. Semond,
G. Patriarche,
L. Largeau,
P. Turban,
A. Ponchet,
C. Cornet
Abstract:
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations a…
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Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.
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Submitted 6 April, 2018;
originally announced April 2018.
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Confinement of superconducting fluctuations due to emergent electronic inhomogeneities
Authors:
C. Carbillet,
S. Caprara,
M. Grilli,
C. Brun,
T. Cren,
F. Debontridder,
B. Vignolle,
W. Tabis,
D. Demaille,
L. Largeau,
K. Ilin,
M. Siegel,
D. Roditchev,
B. Leridon
Abstract:
The microscopic nature of an insulating state in the vicinity of a superconducting state, in the presence of disorder, is a hotly debated question. While the simplest scenario proposes that Coulomb interactions destroy the Cooper pairs at the transition, leading to localization of single electrons, an alternate possibility supported by experimental observations suggests that Cooper pairs instead d…
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The microscopic nature of an insulating state in the vicinity of a superconducting state, in the presence of disorder, is a hotly debated question. While the simplest scenario proposes that Coulomb interactions destroy the Cooper pairs at the transition, leading to localization of single electrons, an alternate possibility supported by experimental observations suggests that Cooper pairs instead directly localize. The question of the homogeneity, granularity, or possibly glassiness of the material on the verge of this transition is intimately related to this fundamental issue. Here, by combining macroscopic and nano-scale studies of superconducting ultrathin NbN films, we reveal nanoscopic electronic inhomogeneities that emerge when the film thickness is reduced. In addition, while thicker films display a purely two-dimensional behaviour in the superconducting fluctuations, we demonstrate a zero-dimensional regime for the thinner samples precisely on the scale of the inhomogeneities. Such behavior is somehow intermediate between the Fermi and Bose insulator paradigms and calls for further investigation to understand the way Cooper pairs continuously evolve from a bound state of fermionic objects into localized bosonic entities.
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Submitted 31 July, 2015;
originally announced July 2015.
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Surface acoustic wave driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers
Authors:
Laura Thevenard,
Catherine Gourdon,
Jean-Yves Prieur,
Hans Jürgen von Bardeleben,
Serge Vincent,
Loic Becerra,
Ludovic Largeau,
Jean-Yves Duquesne
Abstract:
Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the layer, making it an ideal test material for the dynamic control of magnetization via magneto-striction. The time-domain measurement of the amplitude and phase o…
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Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the layer, making it an ideal test material for the dynamic control of magnetization via magneto-striction. The time-domain measurement of the amplitude and phase of the transmitted SAW during magnetic field sweeps indicated a clear resonant behavior at a field close to the one calculated to give a precession frequency equal to the SAW frequency. A resonance was observed from 5K to 85K, just below the Curie temperature of the layer. A full analytical treatment of the coupled magnetization/acoustic dynamics showed that the magneto-strictive coupling modifies the elastic constants of the material and accordingly the wave-vector solution to the elastic wave equation. The shape and position of the resonance were well reproduced by the calculations, in particular the fact that velocity (phase) variations resonated at lower fields than the acoustic attenuation variations.
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Submitted 25 June, 2014;
originally announced June 2014.
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Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer
Authors:
Tarik Niazi,
Mathieu Cormier,
Damien Lucot,
Ludovic Largeau,
Vincent Jeudy,
Joel Cibert,
Aristide Lemaître
Abstract:
We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy is controlled by the gate voltage of a field effect device. Anomalous Hall Effect measurements confirm that a depletion of carriers in the upp…
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We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy is controlled by the gate voltage of a field effect device. Anomalous Hall Effect measurements confirm that a depletion of carriers in the upper (Ga,Mn)As layer results in the decrease of the in-plane anisotropy. The uniaxial anisotropy field is found to decrease by a factor ~ 4 over the explored gate-voltage range, so that the transition to an out-of-plane easy-axis configuration is almost reached.
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Submitted 29 November, 2012;
originally announced November 2012.
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Optical spectroscopy of two-dimensional layered $(C_{6}H_{5}C_{2}H_{4}-NH_{3})_{2}-PbI_{4}$ perovskite
Authors:
K. Gauthron,
J. S. Lauret,
L. Doyennette,
G. Lanty,
A. Al Choueiry,
S. J. Zhang,
A. Brehier,
L. Largeau,
O. Mauguin,
J. Bloch,
E. Deleporte
Abstract:
We report on optical spectroscopy (photoluminescence and photoluminescence excitation) on two-dimensional self-organized layers of $(C_{6}H_{5}C_{2}H_{4}-NH_{3})_{2}PbI_{4}$ perovskite. Temperature and excitation power dependance of the optical spectra gives a new insight into the excitonic and phononic properties of this hybrid organic/inorganic semiconductor. In particular, exciton-phonon inte…
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We report on optical spectroscopy (photoluminescence and photoluminescence excitation) on two-dimensional self-organized layers of $(C_{6}H_{5}C_{2}H_{4}-NH_{3})_{2}PbI_{4}$ perovskite. Temperature and excitation power dependance of the optical spectra gives a new insight into the excitonic and phononic properties of this hybrid organic/inorganic semiconductor. In particular, exciton-phonon interaction is found to be more than one order of magnitude higher than in GaAs QWs. As a result, photoluminescence emission lines have to be interpreted in the framework of a polaron model.
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Submitted 30 August, 2009;
originally announced August 2009.
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Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers
Authors:
M. Cubukcu,
H. J. von Bardeleben,
Kh. Khazen,
J. L. Cantin,
O. Mauguin,
L. Largeau,
A. Lemaitre
Abstract:
Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying levels between 0 and 8.8 at % for a Mn do** level of ~ 7at%. We show that it is possible to obtain layers with robust ferromagnetism and either in-…
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Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying levels between 0 and 8.8 at % for a Mn do** level of ~ 7at%. We show that it is possible to obtain layers with robust ferromagnetism and either in-plane or out-of plane easy axes with small barriers for magnetization reorientation by phosphorous alloying with y< 6at% or y> 6at%. The critical temperatures are not significantly increased by the P alloying.
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Submitted 10 August, 2009; v1 submitted 1 August, 2009;
originally announced August 2009.
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Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
Authors:
Aristide Lemaître,
Audrey Miard,
Laurent Travers,
Olivia Mauguin,
Ludovic Largeau,
Catherine Gourdon,
Vincent Jeudy,
Michael Tran,
Jean-Marie George
Abstract:
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interes…
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A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.
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Submitted 4 July, 2008;
originally announced July 2008.
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Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Aristide Lemaître,
Khashayar Khazen,
Jürgen Von Bardeleben
Abstract:
The magnetic properties of (Ga,Mn)As thin films depend on both the Mn do** level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while maintaining the manganese concentration constant. For such a series of films we have investigated the variation of the magnetization, the easy and h…
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The magnetic properties of (Ga,Mn)As thin films depend on both the Mn do** level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while maintaining the manganese concentration constant. For such a series of films we have investigated the variation of the magnetization, the easy and hard axes of magnetization, the critical temperatures, the coercive fields and the magnetocrystalline anisotropy constants as a function of temperature using magnetometry, ferromagnetic resonance and magneto-transport measurements. In particular, we evidenced that magnetic easy axes flipped from out-of-plane [001] to in-plane [100] axis, followed by the <110> axes, with increasing hole density and temperature. Our study concluded on a general agreement with mean-field theory predictions of the expected easy axis reversals, and of the weight of uniaxial and cubic anisotropies in this material.
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Submitted 23 February, 2007;
originally announced February 2007.
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Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Gilles Patriarche,
Aristide Lemaître,
Nicolas Vernier,
Jacques Ferré
Abstract:
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threa…
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The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer.
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Submitted 17 February, 2006; v1 submitted 16 February, 2006;
originally announced February 2006.
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Tuning the ferromagnetic properties of hydrogenated GaMnAs
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Aristide Lemaître,
Bertrand Theys
Abstract:
Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modifications of their ferromagnetic properties. In particular, we observed in magnetotransport experiments the decrease of the Curie temperature, along wi…
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Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modifications of their ferromagnetic properties. In particular, we observed in magnetotransport experiments the decrease of the Curie temperature, along with modifications of the magnetic anisotropy, a behavior consistent with the mean-field theory.
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Submitted 12 January, 2006; v1 submitted 15 April, 2005;
originally announced April 2005.
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Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures
Authors:
Jose Coelho,
Gilles Patriarche,
Frank Glas,
Guillaume Saint-Girons,
Isabelle Sagnes,
Ludovic Largeau
Abstract:
We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between which we establish in a controlled manner a twist and a tilt around a k110l direction. For large enough twists, the DN consists of a twodimensional network of screw dislocations accommodating mainly the twist and of a…
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We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between which we establish in a controlled manner a twist and a tilt around a k110l direction. For large enough twists, the DN consists of a twodimensional network of screw dislocations accommodating mainly the twist and of a one-dimensional network of mixed dislocations accommodating mainly the tilt. We show that in addition the mixed dislocations accommodate part of the twist and we observe and explain slight unexpected disorientations of the screw dislocations with respect to the k110l directions. By performing a quantitative analysis of the whole DN, we propose a coherent interpretation of these observations which also provides data inaccessible by direct experiments. When the twist is small enough, one screw subnetwork vanishes. The surface strain field induced by such DNs has been used to pilot the lateral ordering of GaAs and InGaAs nanostructures during metal-organic vapor phase epitaxy. We prove that the dimensions and orientations of the nanostructures are correlated with those of the cells of the underlying DN and explain how the interface dislocation structure governs the formation of the nanostructures.
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Submitted 29 November, 2004;
originally announced November 2004.
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Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs
Authors:
F. Glas,
G. Patriarche,
L. Largeau,
A. Lemaitre
Abstract:
We present a method for the determination of the local concentrations of interstitial and substitutional Mn atoms and As antisite defects in GaMnAs. The method relies on the sensitivity of the structure factors of weak reflections to the concentrations and locations of these minority constituents. High spatial resolution is obtained by combining structure factor measurement and X-ray analysis in…
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We present a method for the determination of the local concentrations of interstitial and substitutional Mn atoms and As antisite defects in GaMnAs. The method relies on the sensitivity of the structure factors of weak reflections to the concentrations and locations of these minority constituents. High spatial resolution is obtained by combining structure factor measurement and X-ray analysis in a transmission electron microscope. We demonstrate the prevalence of interstitials with As nearest neighbors in as-grown layers.
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Submitted 20 August, 2004; v1 submitted 17 May, 2004;
originally announced May 2004.
