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Macroscopic uniform 2D moiré superlattices with controllable angles
Authors:
Gregory Zaborski Jr.,
Paulina E. Majchrzak,
Samuel Lai,
Amalya C. Johnson,
Ashley P. Saunders,
Ziyan Zhu,
Yujun Deng,
Donghui Lu,
Makoto Hashimoto,
Z-X Shen,
Fang Liu
Abstract:
Moiré superlattices, engineered through precise stacking of van der Waals (vdW) layers, hold immense promise for exploring strongly correlated and topological phenomena. However, these applications have been held back by the common preparation method: tear-and-stack of Scotch tape exfoliated monolayers. It has low efficiency and reproducibility, along with challenges of twist angle inhomogeneity,…
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Moiré superlattices, engineered through precise stacking of van der Waals (vdW) layers, hold immense promise for exploring strongly correlated and topological phenomena. However, these applications have been held back by the common preparation method: tear-and-stack of Scotch tape exfoliated monolayers. It has low efficiency and reproducibility, along with challenges of twist angle inhomogeneity, interfacial contamination, micrometer sizes, and a tendency to untwist at elevated temperatures. Here we report an effective strategy to construct highly consistent vdW moiré structures with high production throughput, near-unity yield, pristine interfaces, precisely controlled twist angles, and macroscopic scale (up to centimeters) with enhanced thermal stability. We further demonstrate the versatility across various vdW materials including transition metal dichalcogenides, graphene, and hBN. The expansive size and high quality of moiré structures enables high-resolution map** of the reciprocal space back-folded lattices and moiré mini band structures with low energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES). This technique will have broad applications in both fundamental studies and mass production of twistronic devices.
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Submitted 2 July, 2024;
originally announced July 2024.
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Superionic surface Li-ion transport in carbonaceous materials
Authors:
Jianbin Zhou,
Shen Wang,
Chaoshan Wu,
Ji Qi,
Hongli Wan,
Shen Lai,
Shijie Feng,
Tsz Wai Ko,
Zhaohui Liang,
Ke Zhou,
Nimrod Harpak,
Nick Solan,
Mengchen Liu,
Zeyu Hui,
Paulina J. Ai,
Kent Griffith,
Chunsheng Wang,
Shyue ** Ong,
Yan Yao,
** Liu
Abstract:
Unlike Li-ion transport in the bulk of carbonaceous materials, little is known about Li-ion diffusion on their surface. In this study, we have discovered an ultra-fast Li-ion transport phenomenon on the surface of carbonaceous materials, particularly when they have limited Li insertion capacity along with a high surface area. This is exemplified by a carbon black, Ketjen Black (KB). An ionic condu…
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Unlike Li-ion transport in the bulk of carbonaceous materials, little is known about Li-ion diffusion on their surface. In this study, we have discovered an ultra-fast Li-ion transport phenomenon on the surface of carbonaceous materials, particularly when they have limited Li insertion capacity along with a high surface area. This is exemplified by a carbon black, Ketjen Black (KB). An ionic conductivity of 18.1 mS cm-1 at room temperature is observed, far exceeding most solid-state ion conductors. Theoretical calculations reveal a low diffusion barrier for the surface Li species. The species is also identified as Li*, which features a partial positive charge. As a result, lithiated KB functions effectively as an interlayer between Li and solid-state electrolytes (SSE) to mitigate dendrite growth and cell shorting. This function is found to be electrolyte agnostic, effective for both sulfide and halide SSEs. Further, lithiated KB can act as a high-performance mixed ion/electron conductor that is thermodynamically stable at potentials near Li metal. A graphite anode mixed with KB instead of a solid electrolyte demonstrates full utilization with a capacity retention of ~85% over 300 cycles. The discovery of this surface-mediated ultra-fast Li-ion transport mechanism provides new directions for the design of solid-state ion conductors and solid-state batteries.
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Submitted 27 May, 2024;
originally announced May 2024.
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Nonlinear Hall effect with non-centrosymmetric topological phase in ZrTe$_5$
Authors:
Naizhou Wang,
**g-Yang You,
Aifeng Wang,
Xiaoyuan Zhou,
Zhaowei Zhang,
Shen Lai,
Hung-Ju Tien,
Tay-Rong Chang,
Yuan-** Feng,
Hsin Lin,
Guoqing Chang,
Wei-bo Gao
Abstract:
The non-centrosymmetric topological material has attracted intense attention due to its superior characters as compared to the centrosymmetric one. On one side, the topological phase coming from global geometric properties of the quantum wave function remains unchanged, on the other side, abundant exotic phenomena are predicted to be merely emerged in non-centrosymmetric ones, due to the redistrib…
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The non-centrosymmetric topological material has attracted intense attention due to its superior characters as compared to the centrosymmetric one. On one side, the topological phase coming from global geometric properties of the quantum wave function remains unchanged, on the other side, abundant exotic phenomena are predicted to be merely emerged in non-centrosymmetric ones, due to the redistribution of local quantum geometry. Whereas, probing the local quantum geometry in non-centrosymmetric topological material remains challenging. Here, we report a non-centrosymmetric topological phase in ZrTe$_5$, probed by the nonlinear Hall (NLH) effect. The angle-resolved and temperature-dependent NLH measurement reveals the inversion and ab-plane mirror symmetries breaking under 30 K, consistent with our theoretical calculation. Our findings identify a new non-centrosymmetric phase of ZrTe$_5$ and provide a platform to probe and control local quantum geometry via crystal symmetries.
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Submitted 14 February, 2022;
originally announced February 2022.
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Berry connection polarizability tensor and third-order Hall effect
Authors:
Huiying Liu,
Jianzhou Zhao,
Yue-Xin Huang,
Xiaolong Feng,
Cong Xiao,
Weikang Wu,
Shen Lai,
Wei-bo Gao,
Shengyuan A. Yang
Abstract:
One big achievement in modern condensed matter physics is the recognition of the importance of various band geometric quantities in physical effects. As prominent examples, Berry curvature and the Berry curvature dipole are connected to the linear and the second-order Hall effects, respectively. Here, we show that the Berry connection polarizability (BCP) tensor, as another intrinsic band geometri…
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One big achievement in modern condensed matter physics is the recognition of the importance of various band geometric quantities in physical effects. As prominent examples, Berry curvature and the Berry curvature dipole are connected to the linear and the second-order Hall effects, respectively. Here, we show that the Berry connection polarizability (BCP) tensor, as another intrinsic band geometric quantity, plays a key role in the third-order Hall effect. Based on the extended semiclassical formalism, we develop a theory for the third-order charge transport and derive explicit formulas for the third-order conductivity. Our theory is applied to the two-dimensional (2D) Dirac model to investigate the essential features of the BCP and the third-order Hall response. We further demonstrate the combination of our theory with the first-principles calculations to study a concrete material system, the monolayer FeSe. Our work establishes a foundation for the study of third-order transport effects, and reveals the third-order Hall effect as a tool for characterizing a large class of materials and for probing the BCP in band structure.
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Submitted 10 January, 2022; v1 submitted 9 June, 2021;
originally announced June 2021.
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Temperature-sensitive spatial distribution of defects in PdSe2 flakes
Authors:
Xiaowei Liu,
Yaojia Wang,
Qiqi Guo,
Shijun Liang,
Tao Xu,
Bo Liu,
Jiabin Qiao,
Shengqiang Lai,
Junwen Zeng,
Song Hao,
Chenyi Gu,
Tianjun Cao,
Chenyu Wang,
Yu Wang,
Chen Pan,
Guangxu Su,
Yuefeng Nie,
Xiangang Wan,
Litao Sun,
Zhenlin Wang,
Lin He,
Bin Cheng,
Feng Miao
Abstract:
Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microsco…
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Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microscopy (STM). We observe that the spatial distribution of Se vacancies in PdSe2 flakes exhibits a strong anisotropic characteristic at 80 K, and that this orientation-dependent feature is weakened when temperature is raised. Moreover, we carry out transport measurements on PdSe2 thin flakes and show that the anisotropic features of carrier mobility and phase coherent length are also sensitive to temperature. Combining with theoretical analysis, we conclude that temperature-driven defect spatial redistribution could interpret the temperature-sensitive electrical transport behaviors in PdSe2 thin flakes. Our work highlights that engineering spatial distribution of defects in the van der Waals materials, which has been overlooked before, may open up a new avenue to tailor the physical properties of materials and explore new device functionalities.
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Submitted 14 April, 2021;
originally announced April 2021.
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Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures
Authors:
Chongyun Jiang,
Abdullah Rasmita,
Hui Ma,
Qinghai Tan,
Zumeng Huang,
Shen Lai,
Sheng Liu,
Xue Liu,
Qihua Xiong,
Wei-bo Gao
Abstract:
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of V…
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Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of VHE at room temperature in the MoS2/WSe2 heterostructures. We also uncover that both the magnitude and the polarity of the VHE in the 2D heterostructure is gate tunable. We attribute this to the opposite VHE contribution from the electron and hole in different layers. These results indicate the bipolar transport nature of our valleytronic transistor. Utilizing this gate tunability, we demonstrate a bipolar valleytronic transistor. Our results can be used to improve the ON/OFF ratio of the valleytronic transistor and to realize more versatile valleytronics logic circuits.
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Submitted 7 February, 2021;
originally announced February 2021.
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Anomalous isotope effect in BCS superconductors with two boson modes
Authors:
Gan Sun,
Pan-Xiao Lou,
Sheng-Qiang Lai,
Da Wang,
Qiang-Hua Wang
Abstract:
The isotope effect in the superconducting transition temperature is anomalous if the isotope coefficient $α<0$ or $α>1/2$. In this work, we show that such anomalous behaviors can naturally arise within the Bardeen-Cooper-Schrieffer framework if both phonon and non-phonon modes coexist. Different from the case of the standard Eliashberg theory (with only phonon) in which $α\le1/2$, the isotope coef…
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The isotope effect in the superconducting transition temperature is anomalous if the isotope coefficient $α<0$ or $α>1/2$. In this work, we show that such anomalous behaviors can naturally arise within the Bardeen-Cooper-Schrieffer framework if both phonon and non-phonon modes coexist. Different from the case of the standard Eliashberg theory (with only phonon) in which $α\le1/2$, the isotope coefficient can now take arbitrary values in the simultaneous presence of phonon and the other non-phonon mode. In particular, most strikingly, a pair-breaking phonon can give rise to large isotope coefficient $α>1/2$ if the unconventional superconductivity is mediated by the lower frequency non-phonon boson mode. Based on our studies, implications on several families of superconductors are discussed.
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Submitted 7 May, 2021; v1 submitted 29 September, 2020;
originally announced September 2020.
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Magnetic Proximity Effect in 2D Ferromagnetic CrBr3/Graphene van der Waals Heterostructures
Authors:
Chaolong Tang,
Zhaowei Zhang,
Shen Lai,
Qinghai Tan,
Wei-bo Gao
Abstract:
Two-dimensional (2D) van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. The efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection thro…
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Two-dimensional (2D) van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. The efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection through magnetic proximity effect (MPE). Here, we report the investigation of magnetic proximity effect in 2D CrBr3/graphene van der Waals heterostructures, which is probed by Zeeman spin Hall effect through non-local measurements. Zeeman splitting field estimation demonstrates a significant magnetic proximity exchange field even in a low magnetic field. Furthermore, the observed anomalous longitudinal resistance changes at the Dirac point R_(XX,D)with increasing magnetic field at ν = 0 may attribute to the MPE induced new ground state phases. This MPE revealed in our CrBr3/graphene van der Waals heterostructures therefore provides a solid physics basis and key functionality for next generation 2D spin logic and memory devices.
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Submitted 23 October, 2019;
originally announced October 2019.
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Charge State Hysteresis in Semiconductor Quantum Dots
Authors:
C. H. Yang,
A. Rossi,
N. S. Lai,
R. Leon,
W. H. Lim,
A. S. Dzurak
Abstract:
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnel…
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Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.
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Submitted 7 July, 2014;
originally announced July 2014.
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Charge Offset Stability in Si Single Electron Devices with Al Gates
Authors:
Neil M. Zimmerman,
Chih-Hwan Yang,
Nai Shyan Lai,
Wee Han Lim,
Andrew S. Dzurak
Abstract:
We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset…
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We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability.
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Submitted 29 June, 2014;
originally announced June 2014.
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Printed Circuit Board Metal Powder Filters for Low Electron Temperatures
Authors:
Filipp Mueller,
Raymond N. Schouten,
Matthias Brauns,
Tian Gang,
Wee Han Lim,
Nai Shyan Lai,
Andrew S. Dzurak,
Wilfred G. van der Wiel,
Floris A. Zwanenburg
Abstract:
We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuatio…
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We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuation of a stainless steel powder filter is more than 80 dB at frequencies above 1.5 GHz. In all metal powder filters the attenuation increases with temperature. Compared to classical powder filters, the design presented here is much less laborious to fabricate and specifically the copper powder PCB-filters deliver an equal or even better performance than their classical counterparts.
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Submitted 17 April, 2013; v1 submitted 11 April, 2013;
originally announced April 2013.
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Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
Authors:
C. H. Yang,
A. Rossi,
R. Ruskov,
N. S. Lai,
F. A. Mohiyaddin,
S. Lee,
C. Tahan,
G. Klimeck,
A. Morello,
A. S. Dzurak
Abstract:
Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we demonstrate that valley separation can be accurately tuned via electrostatic gate control in a metal-oxide-semiconductor quantum dot, providing splittings spanning…
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Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we demonstrate that valley separation can be accurately tuned via electrostatic gate control in a metal-oxide-semiconductor quantum dot, providing splittings spanning 0.3 - 0.8 meV. The splitting varies linearly with applied electric field, with a ratio in agreement with atomistic tight-binding predictions. We demonstrate single-shot spin readout and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 seconds. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. An analytical theory describes the magnetic field dependence of the relaxation rate, including the presence of a dramatic rate enhancement (or hot-spot) when Zeeman and valley splittings coincide.
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Submitted 30 May, 2013; v1 submitted 5 February, 2013;
originally announced February 2013.
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Orbital and valley state spectra of a few-electron silicon quantum dot
Authors:
C. H. Yang,
W. H. Lim,
N. S. Lai,
A. Rossi,
A. Morello,
A. S. Dzurak
Abstract:
Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. The occupancy of the quantum dot is probed down to the single-electron level using a nearby si…
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Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. The occupancy of the quantum dot is probed down to the single-electron level using a nearby single-electron transistor as a charge sensor. The energy of the first orbital excited state is found to decrease rapidly as the electron occupancy increases from N=1 to 4. By monitoring the sequential spin filling of the dot we extract a valley splitting of ~230 μeV, irrespective of electron number. This indicates that favorable conditions for qubit operation are in place in the few-electron regime.
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Submitted 10 October, 2012; v1 submitted 3 April, 2012;
originally announced April 2012.
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Growth of graphene on 6H-SiC by molecular dynamics simulation
Authors:
N. Jakse,
R. Arifin,
S. K. Lai
Abstract:
Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simulation results, we tested two empirical potentials and evaluated their reliability by the calculated c…
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Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simulation results, we tested two empirical potentials and evaluated their reliability by the calculated characteristics of graphene, its carbon-carbon bond-length, pair correlation function, and binding energy.
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Submitted 22 February, 2012;
originally announced February 2012.
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Single-electron shuttle based on a silicon quantum dot
Authors:
K. W. Chan,
M. Mottonen,
A. Kemppinen,
N. S. Lai,
K. Y. Tan,
W. H. Lim,
A. S. Dzurak
Abstract:
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead…
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We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency f_p. Current plateaus at integer levels of ef_p are observed up to f_p = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.
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Submitted 5 October, 2011; v1 submitted 30 March, 2011;
originally announced March 2011.
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Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
Authors:
N. S. Lai,
W. H. Lim,
C. H. Yang,
F. A. Zwanenburg,
W. A. Coish,
F. Qassemi,
A. Morello,
A. S. Dzurak
Abstract:
Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nu…
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Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nuclear spins, which is achievable in silicon by isotopic purification. Here we report on a deliberately engineered, gate-defined silicon metal-oxide-semiconductor double quantum dot system. The electron occupancy of each dot and the inter-dot tunnel coupling are independently tunable by electrostatic gates. At weak inter-dot coupling we clearly observe Pauli spin blockade and measure a large intra-dot singlet-triplet splitting $>$ 1 meV. The leakage current in spin blockade has a peculiar magnetic field dependence, unrelated to electron-nuclear effects and consistent with the effect of spin-flip cotunneling processes. The results obtained here provide excellent prospects for realizing singlet-triplet qubits in silicon.
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Submitted 14 April, 2011; v1 submitted 7 December, 2010;
originally announced December 2010.
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Improved time-resolved magneto-optical Kerr effect technique and dynamic magnetization reversal mechanism of perpendicularly magnetized $L1_{\mathrm{0}}$ FePt films
Authors:
X. D. Liu,
Z. Xu,
R. X. Gao,
Z. F. Chen,
T. S. Lai,
J. Du,
S. M. Zhou
Abstract:
The dynamic coercivity cannot be measured rigorously by the conventional time-resolved magneto-optical Kerr effect technique because the irreversible deviation of the transient magnetization is accumulated. In order to remove the accumulation effect, the alternating magnetic field is employed and synchronized with the femtosecond laser pulse. Since the sample is reset before each single laser pu…
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The dynamic coercivity cannot be measured rigorously by the conventional time-resolved magneto-optical Kerr effect technique because the irreversible deviation of the transient magnetization is accumulated. In order to remove the accumulation effect, the alternating magnetic field is employed and synchronized with the femtosecond laser pulse. Since the sample is reset before each single laser pulse, the accumulation effect of the irreversible deviation of the transient magnetization is removed. For perpendicularly magnetized $L1_{\mathrm{0}}$ FePt films, the dynamic magnetization reversal process is accomplished by the nucleation of reversed domains and the pinned domain wall motion.
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Submitted 31 January, 2009; v1 submitted 7 December, 2008;
originally announced December 2008.
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Density dependence of spin relaxation in GaAs quantum well at room temperature
Authors:
L. H. Teng,
P. Zhang,
T. S. Lai,
M. W. Wu
Abstract:
Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time first increases with density in the relatively low density regime where the linear D'yakonov-Perel' spin-orbit coupling terms are dominant, and then tends to decr…
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Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time first increases with density in the relatively low density regime where the linear D'yakonov-Perel' spin-orbit coupling terms are dominant, and then tends to decrease when the density is large and the cubic D'yakonov-Perel' spin-orbit coupling terms become important. These features are in good agreement with theoritical predictions by Lü {\em et al.} [Phys. Rev. B {\bf 73}, 125314 (2006)]. A fully microscopic calculation based on numerically solving the kinetic spin Bloch equations with both the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms included, reproduces the density dependence of spin relaxation very well.
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Submitted 8 September, 2008; v1 submitted 16 June, 2008;
originally announced June 2008.
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Lowest-energy structures of 13-atom binary clusters: Do icosahedral clusters exist in binary liquid alloys?
Authors:
M. Iwamatsu,
S. K. Lai
Abstract:
Although the existence of 13-atom icosahedral clusters in one-component close-packed undercooled liquids was predicted more than half a century ago by Frank, the existence of such icosahedral clusters is less clear in liquid alloys. We study the lowest-energy structures of 13-atom AxB13-x Lennard-Jones binary clusters using the modified space-fixed genetic algorithm and the artificial Lennard-Jo…
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Although the existence of 13-atom icosahedral clusters in one-component close-packed undercooled liquids was predicted more than half a century ago by Frank, the existence of such icosahedral clusters is less clear in liquid alloys. We study the lowest-energy structures of 13-atom AxB13-x Lennard-Jones binary clusters using the modified space-fixed genetic algorithm and the artificial Lennard-Jones potential designed by Kob and Andersen. Curiously, the lowest-energy structures are non-icosahedral for almost all compositions. The role played by the icosahedral cluster in a binary glass is questionable.
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Submitted 31 May, 2007;
originally announced May 2007.
