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Large Fermi surface in pristine kagome metal CsV$_3$Sb$_5$ and enhanced quasiparticle effective masses
Authors:
Wei Zhang,
Tsz Fung Poon,
Chun Wai Tsang,
Wenyan Wang,
X. Liu,
J. Xie,
S. T. Lam,
Shanmin Wang,
Kwing To Lai,
A. Pourret,
G. Seyfarth,
G. Knebel,
Wing Chi Yu,
Swee K. Goh
Abstract:
The kagome metal CsV$_3$Sb$_5$ is an ideal platform to study the interplay between topology and electron correlation. To understand the fermiology of CsV$_3$Sb$_5$, intensive quantum oscillation (QO) studies at ambient pressure have been conducted. However, due to the Fermi surface reconstruction by the complicated charge density wave (CDW) order, the QO spectrum is exceedingly complex, hindering…
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The kagome metal CsV$_3$Sb$_5$ is an ideal platform to study the interplay between topology and electron correlation. To understand the fermiology of CsV$_3$Sb$_5$, intensive quantum oscillation (QO) studies at ambient pressure have been conducted. However, due to the Fermi surface reconstruction by the complicated charge density wave (CDW) order, the QO spectrum is exceedingly complex, hindering a complete understanding of the fermiology. Here, we directly map the Fermi surface of the pristine CsV$_3$Sb$_5$ by measuring Shubnikov-de Haas QOs up to 29 T under pressure, where the CDW order is completely suppressed. The QO spectrum of the pristine CsV$_3$Sb$_5$ is significantly simpler than the one in the CDW phase, and the detected oscillation frequencies agree well with our density functional theory calculations. In particular, a frequency as large as 8,200 T is detected. Pressure-dependent QO studies further reveal a weak but noticeable enhancement of the quasiparticle effective masses on approaching the critical pressure where the CDW order disappears, hinting at the presence of quantum fluctuations. Our high-pressure QO results reveal the large, unreconstructed Fermi surface of CsV$_3$Sb$_5$, paving the way to understanding the parent state of this intriguing metal in which the electrons can be organized into different ordered states.
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Submitted 17 May, 2024;
originally announced May 2024.
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Shubnikov-de Haas oscillations of biaxial-strain-tuned superconductors in pulsed magnetic field up to 60 T
Authors:
King Yau Yip,
Lingfei Wang,
Tsz Fung Poon,
Kai Ham Yu,
Siu Tung Lam,
Kwing To Lai,
John Singleton,
Fedor F. Balakirev,
Swee K. Goh
Abstract:
Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure a…
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Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure and, for metallic 2D materials, quantum oscillations superimposed on the transport signals encode Fermi surface parameters. In this manuscript, we utilize biaxial strain as an external tuning parameter and investigate the effects of strain on the electronic properties of two quasi-2D superconductors, MoTe$_2$ and RbV$_3$Sb$_5$, by measuring their magnetoresistance in pulsed magnetic fields up to 60 T. With a careful selection of insulating substrates, we demonstrate the possibility of both the compressive and tensile biaxial strain, imposed on MoTe$_2$ and RbV$_3$Sb$_5$, respectively. For both systems, the applied strain has led to superconducting critical temperature enhancement compared to their free-standing counterparts, proving the effectiveness of this biaxial strain method at cryogenic temperatures. Clear quantum oscillations in the magnetoresistance -- the Shubnikov-de Haas (SdH) effect -- are obtained in both samples. In strained MoTe$_2$, the magnetoresistance exhibits a nearly quadratic dependence on the magnetic field and remains non-saturating even at the highest field. Whereas in strained RbV$_3$Sb$_5$, two SdH frequencies showed a substantial enhancement in effective mass values, hinting at a possible enhancement of charge fluctuations. Our results demonstrate that combining biaxial strain and pulsed magnetic field paves the way for studying 2D materials under unprecedented conditions.
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Submitted 22 February, 2024;
originally announced February 2024.
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Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors
Authors:
Jia Yu,
Yuchen Zhou,
Xiao Wang,
Ananth Dodabalapur,
Keji Lai
Abstract:
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are important to unveil electronic properties. Here, we report gigahertz conductivity map** in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors by micro…
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Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are important to unveil electronic properties. Here, we report gigahertz conductivity map** in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors by microwave impedance microscopy (MIM), which probes conductivity without Schottky barrier's influence. The difference between dc and microwave conductivities reflects the efficacy of the injection barrier in an accumulation-mode transistor. The conductivity exhibits significant nanoscale inhomogeneity in the subthreshold regime, presumably due to trap** and releasing from localized states. The characteristic length scale of local fluctuations, as determined by autocorrelation analysis, is about 200 nm. Using random-barrier model, we can simulate the spatial variation of potential landscape, which underlies the mesoscopic conductivity distribution. Our work provides an intuitive way to understand the charge transport mechanism in amorphous semiconductors at microscopic level.
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Submitted 15 December, 2023;
originally announced December 2023.
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Tunable non-Lifshitz-Kosevich temperature dependence of Shubnikov-de Haas oscillation amplitudes in SmSb
Authors:
Wei Zhang,
C. N. Kuo,
S. T. Kuo,
Chun Wa So,
Jianyu Xie,
Kwing To Lai,
Wing Chi Yu,
C. S. Lue,
Hoi Chun Po,
Swee K. Goh
Abstract:
The Lifshitz-Kosevich (LK) theory is the pillar of magnetic quantum oscillations, which have been extensively applied to characterize a wide range of metallic states. In this study, we focus on the Shubnikov-de Haas (SdH) effect observed in SmSb, a rare-earth monopnictide. We observed a significant departure from the expected LK theory near $T_N=2.4$~K: both a peak-like anomaly and an enhancement…
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The Lifshitz-Kosevich (LK) theory is the pillar of magnetic quantum oscillations, which have been extensively applied to characterize a wide range of metallic states. In this study, we focus on the Shubnikov-de Haas (SdH) effect observed in SmSb, a rare-earth monopnictide. We observed a significant departure from the expected LK theory near $T_N=2.4$~K: both a peak-like anomaly and an enhancement in the temperature dependence of quantum oscillation amplitude are seen in SmSb. Moreover, we discovered a remarkable sensitivity of the SdH amplitudes to sample purity. By adjusting the sample purity, we were able to tune the temperature dependence of the $α$ band's SdH amplitudes from a peak-like anomalous behavior to an enhancement. Therefore, SdH oscillations from the $α$ band connect the two well-known non-LK behaviours, controllable through varying the sample purity, paving the way for develo** further understanding of the mechanism leading to the anomalous quantum oscillations.
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Submitted 10 October, 2023;
originally announced October 2023.
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Suppression of both superconductivity and structural transition in hole-doped MoTe$_2$ induced by Ta substitution
Authors:
Siu Tung Lam,
K. Y. Yip,
Swee K. Goh,
Kwing To Lai
Abstract:
Type-II Weyl semimetal MoTe$_2$ exhibits a first-order structural transition at $T_s$ $\sim$250~K and superconducts at $T_c$ $\sim$0.1~K at ambient pressure. Both $T_s$ and $T_c$ can be manipulated by several tuning parameters, such as hydrostatic pressure and chemical substitution. It is often reported that suppressing $T_s$ enhances $T_c$, but our study shows a different behaviour when MoTe$_2$…
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Type-II Weyl semimetal MoTe$_2$ exhibits a first-order structural transition at $T_s$ $\sim$250~K and superconducts at $T_c$ $\sim$0.1~K at ambient pressure. Both $T_s$ and $T_c$ can be manipulated by several tuning parameters, such as hydrostatic pressure and chemical substitution. It is often reported that suppressing $T_s$ enhances $T_c$, but our study shows a different behaviour when MoTe$_2$ is hole-doped by Ta. When $T_s$ is suppressed by Ta do**, $T_c$ is also suppressed. Our findings suggest that the suppression of $T_s$ does not necessarily enhance superconductivity in MoTe$_2$. By connecting with the findings of electron-doped MoTe$_2$, we argue that varying electron carrier concentration can effectively tune $T_c$. In addition, the Hall coefficient is enhanced around the do** region, where $T_s$ is completely suppressed, suggesting that the critical scattering around the structural transition may also play a role in suppressing $T_c$.
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Submitted 1 September, 2023;
originally announced September 2023.
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Electrostatic moiré potential from twisted-hBN layers
Authors:
Dong Seob Kim,
Roy C. Dominguez,
Rigo Mayorga-Luna,
Dingyi Ye,
Jacob Embley,
Tixuan Tan,
Yue Ni,
Zhida Liu,
Mitchell Ford,
Frank Y. Gao,
Saba Arash,
Kenji Watanabe,
Takashi Taniguchi,
Suenne Kim,
Chih-Kang Shih,
Keji Lai,
Wang Yao,
Li Yang,
Xiaoqin Li,
Yoichi Miyahara
Abstract:
Moiré superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moiré potential of the superlattice, however, is fixed by the interlayer coupling of the stacked functional layers (e.g. graphene) and dependent on carrier types (e.g. electrons or holes) and valleys (e.g. Γ vs. K). In contrast, tw…
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Moiré superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moiré potential of the superlattice, however, is fixed by the interlayer coupling of the stacked functional layers (e.g. graphene) and dependent on carrier types (e.g. electrons or holes) and valleys (e.g. Γ vs. K). In contrast, twisted hexagonal boron nitride (hBN) layers are predicted to impose a periodic electrostatic potential that may be used to engineer the properties of an adjacent functional thin layer. Here, we show that this potential is described by a simple theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. We demonstrate that the potential depth and profile can be further controlled by assembling a double moiré structure. When the twist angles are similar at the two interfaces, the potential is deepened by adding the potential from the two twisted interfaces, reaching ~ 400 meV. When the twist angles are dissimilar at the two interfaces, multi-level polarization states are observed. As an example of controlling a functional layer, we demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in a semiconductor monolayer. These findings suggest exciting opportunities for engineering properties of an adjacent functional layer using the surface potential of a twisted hBN substrate.
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Submitted 13 June, 2023;
originally announced June 2023.
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Implementing Microwave Impedance Microscopy in a Dilution Refrigerator
Authors:
Zhanzhi Jiang,
Su Kong Chong,
Peng Zhang,
Peng Deng,
Shizai Chu,
Shahin Jahanbani,
Kang Lung Wang,
Keji Lai
Abstract:
We report the implementation of a dilution-refrigerator-based scanning microwave impedance microscope (MIM) with a base temperature of ~ 100 mK. The vibration noise of our apparatus with tuning-fork feedback control is as low as 1 nm. Using this setup, we have demonstrated the imaging of quantum anomalous Hall states in magnetically (Cr and V) doped (Bi, Sb)2Te3 thin films grown on mica substrates…
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We report the implementation of a dilution-refrigerator-based scanning microwave impedance microscope (MIM) with a base temperature of ~ 100 mK. The vibration noise of our apparatus with tuning-fork feedback control is as low as 1 nm. Using this setup, we have demonstrated the imaging of quantum anomalous Hall states in magnetically (Cr and V) doped (Bi, Sb)2Te3 thin films grown on mica substrates. Both the conductive edge modes and topological phase transitions near coercive fields of Cr-doped and V-doped layers are visualized in the field-dependent results. Our work establishes the experimental platform for investigating nanoscale quantum phenomena under ultralow temperatures.
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Submitted 17 April, 2023;
originally announced April 2023.
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Similarities and Differences in the Fermiology of Kagome Metals AV$_{3}$Sb$_{5}$ (A=K, Rb, Cs) Revealed by Shubnikov-de Haas Oscillations
Authors:
Zheyu Wang,
Wei Zhang,
Lingfei Wang,
Tsz Fung Poon,
Chun Wai Tsang,
Wenyan Wang,
Jianyu Xie,
Xuefeng Zhou,
Yusheng Zhao,
Shanmin Wang,
Ming-zhong Ai,
Kwing To Lai,
Swee K. Goh
Abstract:
Materials with AV$_3$Sb$_5$ (A=K, Rb, Cs) stoichiometry are recently discovered kagome superconductors with the electronic structure featuring a Dirac band, van Hove singularities and flat bands. These systems undergo anomalous charge-density-wave (CDW) transitions at $T_{\rm CDW}$~80-100 K, resulting in the reconstruction of the Fermi surface from the pristine phase. Although comprehensive invest…
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Materials with AV$_3$Sb$_5$ (A=K, Rb, Cs) stoichiometry are recently discovered kagome superconductors with the electronic structure featuring a Dirac band, van Hove singularities and flat bands. These systems undergo anomalous charge-density-wave (CDW) transitions at $T_{\rm CDW}$~80-100 K, resulting in the reconstruction of the Fermi surface from the pristine phase. Although comprehensive investigations of the electronic structure via quantum oscillations (QOs) have been performed on the sister compounds CsV$_3$Sb$_5$ and RbV$_3$Sb$_5$, a detailed QO study of KV$_3$Sb$_5$ is so far absent. Here, we report the Shubnikov-de Haas QO study in KV$_3$Sb$_5$. We resolve a large number of new frequencies with the highest frequency of 2202 T (occupying ~54% of the Brillouin zone area in the $k_x$-$k_y$ plane). The Lifshitz-Kosevich analysis further gives relatively small cyclotron effective masses, and the angular dependence study reveals the two-dimensional nature of the frequencies with a sufficient signal-to-noise ratio. Finally, we compare the QO spectra for all three AV$_3$Sb$_5$ compounds collected under the same conditions, enabling us to point out the similarities and differences across these systems. Our results fill in the gap of the QO study in KV$_3$Sb$_5$ and provide valuable data to understand the band structure of all three members of AV$_3$Sb$_5$.
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Submitted 3 April, 2023;
originally announced April 2023.
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Ph3pyWF: An automated workflow software package for ceramic lattice thermal conductivity calculation
Authors:
Kerui Lai,
Yuxuan Wang
Abstract:
This paper presents a Python software package, Ph3pyWF, providing a more convenient platform to realize high-throughput analysis of lattice thermal conductivity for ceramic materials. The interface of Ph3pyWF is friendly for users with different needs and from different level. For novices of interests, the inputs can be quite simple, just with initial unit cell structure. Other parameters would be…
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This paper presents a Python software package, Ph3pyWF, providing a more convenient platform to realize high-throughput analysis of lattice thermal conductivity for ceramic materials. The interface of Ph3pyWF is friendly for users with different needs and from different level. For novices of interests, the inputs can be quite simple, just with initial unit cell structure. Other parameters would be automatically filled. And for expert-level researchers with varied requirements, plenty of procedure parameters can be customized. The core concept of Ph3pyWF is to build a data exchange and task management system with high efficiency. The design details of the Ph3pyWF will be clarified in this paper and following with a few typical oxide ceramics examples to demonstrate the applicability of this software package.
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Submitted 22 February, 2023;
originally announced February 2023.
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Drastic enhancement of the superconducting temperature in type-II Weyl semimetal candidate MoTe$_2$ via biaxial strain
Authors:
King Yau Yip,
Siu Tung Lam,
Kai Ham Yu,
Wing Shing Chow,
Jiayu Zeng,
Kwing To Lai,
Swee K. Goh
Abstract:
Type-II Weyl semimetal candidate MoTe$_2$, which superconducts at T_c~0.1 K, is one of the promising candidates for realizing topological superconductivity. However, the exceedingly low $T_c$ is associated with a small upper critical field ($H_{c2}$), implying a fragile superconducting phase that only exists on a small region of the $H$-$T$ phase diagram. Here, we describe a simple and versatile a…
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Type-II Weyl semimetal candidate MoTe$_2$, which superconducts at T_c~0.1 K, is one of the promising candidates for realizing topological superconductivity. However, the exceedingly low $T_c$ is associated with a small upper critical field ($H_{c2}$), implying a fragile superconducting phase that only exists on a small region of the $H$-$T$ phase diagram. Here, we describe a simple and versatile approach based on the differential thermal expansion between dissimilar materials to subject a thin single crystalline MoTe$_2$ to biaxial strain. With this approach, we successfully enhance the $T_c$ of MoTe$_2$ five-fold and consequently expand the superconducting region on the $H$-$T$ phase diagram significantly. To demonstrate the relative ease of studying the superconductivity in the biaxially strained MoTe$_2$, we further present the magnetotransport data, enabling the study of the temperature-dependent $H_{c2}$ and the anisotropy of the superconducting state which would otherwise be difficult to obtain in a free-standing MoTe$_2$. Our work shows that biaxial strain is an effective knob to tune the electronic properties of MoTe$_2$. Due to the simplicity of our methodology to apply biaxial strain, we anticipate its direct applicability to a wider class of quantum materials.
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Submitted 7 February, 2023; v1 submitted 6 February, 2023;
originally announced February 2023.
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Nodeless superconductivity in kagome metal CsV$_{3}$Sb$_{5}$ with and without time reversal symmetry breaking
Authors:
Wei Zhang,
Xinyou Liu,
Lingfei Wang,
Chun Wai Tsang,
Zheyu Wang,
Siu Tung Lam,
Wenyan Wang,
Jianyu Xie,
Xuefeng Zhou,
Yusheng Zhao,
Shanmin Wang,
Jeff Tallon,
Kwing To Lai,
Swee K. Goh
Abstract:
The kagome metal CsV$_{3}$Sb$_{5}$ features an unusual competition between the charge-density-wave (CDW) order and superconductivity. Evidence for time-reversal symmetry breaking (TRSB) inside the CDW phase has been accumulating. Hence, the superconductivity in CsV$_{3}$Sb$_{5}$ emerges from a TRSB normal state, potentially resulting in an exotic superconducting state. To reveal the pairing symmet…
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The kagome metal CsV$_{3}$Sb$_{5}$ features an unusual competition between the charge-density-wave (CDW) order and superconductivity. Evidence for time-reversal symmetry breaking (TRSB) inside the CDW phase has been accumulating. Hence, the superconductivity in CsV$_{3}$Sb$_{5}$ emerges from a TRSB normal state, potentially resulting in an exotic superconducting state. To reveal the pairing symmetry, we first investigate the effect of nonmagnetic impurity. Our results show that the superconducting critical temperature is insensitive to disorder, pointing to conventional $s$-wave superconductivity. Moreover, our measurements of the self-field critical current ($I_{c,sf}$), which is related to the London penetration depth, also confirm conventional $s$-wave superconductivity with strong coupling. Finally, we measure $I_{c,sf}$ where the CDW order is removed by pressure and superconductivity emerges from the pristine normal state. Our results show that $s$-wave gap symmetry is retained, providing strong evidence for the presence of conventional $s$-wave superconductivity in CsV$_{3}$Sb$_{5}$ irrespective of the presence of the TRSB
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Submitted 18 January, 2023;
originally announced January 2023.
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Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$
Authors:
Lingfei Wang,
Wei Zhang,
Zheyu Wang,
Tsz Fung Poon,
Wenyan Wang,
Chun Wai Tsang,
Jianyu Xie,
Xuefeng Zhou,
Yusheng Zhao,
Shanmin Wang,
Kwing To Lai,
Swee K. Goh
Abstract:
AV$_3$Sb$_5$ (A=Cs, K, Rb) are recently discovered superconducting systems ($T_{\rm c}\sim0.9-2.5$ K) in which the vanadium atoms adopt the kagome structure. Intriguingly, these systems enter a charge-density-wave (CDW) phase ($T_{\rm CDW}\sim80-100$ K), and further evidence shows that the time-reversal symmetry is broken in the CDW phase. Concurrently, the anomalous Hall effect has been observed…
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AV$_3$Sb$_5$ (A=Cs, K, Rb) are recently discovered superconducting systems ($T_{\rm c}\sim0.9-2.5$ K) in which the vanadium atoms adopt the kagome structure. Intriguingly, these systems enter a charge-density-wave (CDW) phase ($T_{\rm CDW}\sim80-100$ K), and further evidence shows that the time-reversal symmetry is broken in the CDW phase. Concurrently, the anomalous Hall effect has been observed in KV$_3$Sb$_5$ and CsV$_3$Sb$_5$ inside the novel CDW phase. Here, we report a comprehensive study of a high-quality RbV$_3$Sb$_5$ single crystal with magnetotransport measurements. Our data demonstrate the emergence of anomalous Hall effect in RbV$_3$Sb$_5$ when the charge-density-wave state develops. The magnitude of anomalous Hall resistivity at the low temperature limit is comparable to the reported values in KV$_3$Sb$_5$ and CsV$_3$Sb$_5$. The magnetoresistance channel further reveals a rich spectrum of quantum oscillation frequencies, many of which have not been reported before. In particular, a large quantum oscillation frequency (2235 T), which occupies $\sim$56% of the Brillouin zone area, has been recorded. For the quantum oscillation frequencies with sufficient signal-to-noise ratio, we further perform field-angle dependent measurements and our data indicate two-dimensional Fermi surfaces in RbV$_3$Sb$_5$. Our results provide indispensable information for understanding the anomalous Hall effect and band structure in kagome metals AV$_3$Sb$_5$.
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Submitted 9 February, 2023; v1 submitted 24 October, 2022;
originally announced October 2022.
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Peak in the critical current density in (Ca$_{x}$Sr$_{1-x}$)$_3$Rh$_4$Sn$_{13}$ tuned towards the structural quantum critical point
Authors:
Xinyou Liu,
Wei Zhang,
Kwing To Lai,
K. Moriyama,
J. L. Tallon,
K. Yoshimura,
Swee K. Goh
Abstract:
(Ca$_{x}$Sr$_{1-x}$)$_3$Rh$_4$Sn$_{13}$ is a rare system that has been shown to display an interesting interplay between structural quantum criticality and superconductivity. A putative structural quantum critical point, which is hidden beneath a broad superconducting dome, is believed to give rise to optimized superconducting properties in (Ca$_{x}$Sr$_{1-x}$)$_3$Rh$_4$Sn$_{13}$. However, the pre…
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(Ca$_{x}$Sr$_{1-x}$)$_3$Rh$_4$Sn$_{13}$ is a rare system that has been shown to display an interesting interplay between structural quantum criticality and superconductivity. A putative structural quantum critical point, which is hidden beneath a broad superconducting dome, is believed to give rise to optimized superconducting properties in (Ca$_{x}$Sr$_{1-x}$)$_3$Rh$_4$Sn$_{13}$. However, the presence of the superconducting dome itself hinders the examination of the quantum critical point through electrical transport, as the transport coefficients vanish in the superconducting state. Here, we use critical current density to explore within the superconducting dome. Our measurements reveal a large enhancement of the critical current density at the zero-temperature limit when the system is tuned towards the structural quantum critical point.
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Submitted 8 September, 2022;
originally announced September 2022.
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Microscopic study of optically-stable, coherent color centers in diamond generated by high-temperature annealing
Authors:
King Cho Wong,
San Lam Ng,
Kin On Ho,
Yang Shen,
Jiahao Wu,
Kwing To Lai,
Man Yin Leung,
Wai Kuen Leung,
Durga Bhaktavatsala Rao Dasari,
Andrej Denisenko,
Jörg Wrachtrup,
Sen Yang
Abstract:
Single color centers in solid have emerged as promising physical platforms for quantum information science. Creating these centers with excellent quantum properties is a key foundation for further technological developments. In particular, the microscopic understanding of the spin bath environments is the key to engineer color centers for quantum control. In this work, we propose and demonstrate a…
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Single color centers in solid have emerged as promising physical platforms for quantum information science. Creating these centers with excellent quantum properties is a key foundation for further technological developments. In particular, the microscopic understanding of the spin bath environments is the key to engineer color centers for quantum control. In this work, we propose and demonstrate a distinct high-temperature annealing (HTA) approach for creating high-quality nitrogen vacancy (NV) centers in implantation-free diamonds. Simultaneously using the created NV centers as probes for their local environment we verify that no damage was microscopically induced by the HTA. Nearly all single NV centers created in ultra-low-nitrogen-concentration membranes possess stable and Fourier-transform-limited optical spectra. Furthermore, HTA strongly reduces noise sources naturally grown in ensemble samples, and leads to more than three-fold improvements of decoherence time and sensitivity. We also verify that the vacancy activation and defect reformation, especially H3 and P1 centers, can explain the reconfiguration between spin baths and color centers. This novel approach will become a powerful tool in vacancy-based quantum technology.
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Submitted 20 August, 2022;
originally announced August 2022.
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Emergence of large quantum oscillation frequencies in thin flakes of the kagome superconductor CsV$_{3}$Sb$_{5}$
Authors:
W. Zhang,
Lingfei Wang,
Chun Wai Tsang,
Xinyou Liu,
Jianyu Xie,
Wing Chi Yu,
Kwing To Lai,
Swee K. Goh
Abstract:
Kagome metals AV$_3$Sb$_5$~(A = K, Rb, Cs) are recently discovered platforms featuring an unusual charge-density-wave (CDW) order and superconductivity. The electronic band structure of a kagome lattice can host both flat bands as well as Dirac-like bands, offering the possibility to stabilize various quantum states. Here, we probe the band structure of CsV$_3$Sb$_5$ via Shubnikov-de Haas quantum…
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Kagome metals AV$_3$Sb$_5$~(A = K, Rb, Cs) are recently discovered platforms featuring an unusual charge-density-wave (CDW) order and superconductivity. The electronic band structure of a kagome lattice can host both flat bands as well as Dirac-like bands, offering the possibility to stabilize various quantum states. Here, we probe the band structure of CsV$_3$Sb$_5$ via Shubnikov-de Haas quantum oscillations on both bulk single crystals and thin flakes. Although our frequency spectra are broadly consistent with the published data, we unambiguously reveal the existence of new frequencies with large frequencies ranging from $\sim$2085~T to $\sim$2717~T in thin flakes when the magnetic field is along the $c$-axis. These quasi-two-dimensional frequencies correspond to $\sim$52\% to 67\% of the CDW-distorted Brillouin zone volume. The Lifshitz-Kosevich analysis further uncovers surprisingly small cyclotron effective masses, of the order of $\sim$0.1~$m_e$, for these frequencies. Consequently, a large number of high-velocity carriers exists in the thin flake of CsV$_3$Sb$_5$. Comparing with our band structure calculations, we argue that an orbital-selective modification of the band structure is active. Our results provide indispensable information for understanding the fermiology of CsV$_3$Sb$_5$, paving a way for understanding how an orbital-selective mechanism can become an effective means to tune its electronic properties.
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Submitted 31 October, 2022; v1 submitted 17 February, 2022;
originally announced February 2022.
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Observation of Gigahertz Topological Valley Hall Effect in Nanoelectromechanical Phononic Crystals
Authors:
Qicheng Zhang,
Daehun Lee,
Lu Zheng,
Xuejian Ma,
Shawn I. Meyer,
Li He,
Han Ye,
Ze Gong,
Bo Zhen,
Keji Lai,
A. T. Charlie Johnson
Abstract:
Topological phononics offers numerous opportunities in manipulating elastic waves that can propagate in solids without being backscattered. Due to the lack of nanoscale imaging tools that aid the system design, however, acoustic topological metamaterials have been mostly demonstrated in macroscale systems operating at low (kilohertz to megahertz) frequencies. Here, we report the realization of gig…
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Topological phononics offers numerous opportunities in manipulating elastic waves that can propagate in solids without being backscattered. Due to the lack of nanoscale imaging tools that aid the system design, however, acoustic topological metamaterials have been mostly demonstrated in macroscale systems operating at low (kilohertz to megahertz) frequencies. Here, we report the realization of gigahertz topological valley Hall effect in nanoelectromechanical AlN membranes. Propagation of elastic wave through phononic crystals is directly visualized by microwave microscopy with unprecedented sensitivity and spatial resolution. The valley Hall edge states, protected by band topology, are vividly seen in both real- and momentum-space. The robust valley-polarized transport is evident from the wave transmission across local disorder and around sharp corners, as well as the power distribution into multiple edge channels. Our work paves the way to exploit topological physics in integrated acousto-electronic systems for classical and quantum information processing in the microwave regime.
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Submitted 17 March, 2022; v1 submitted 4 February, 2022;
originally announced February 2022.
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Nonvolatile Electric-Field Control of Inversion Symmetry
Authors:
Lucas Caretta,
Yu-Tsun Shao,
Jia Yu,
Antonio B. Mei,
Bastien F. Grosso,
Cheng Dai,
Piush Behera,
Daehun Lee,
Margaret McCarter,
Eric Parsonnet,
Harikrishnan K. P.,
Fei Xue,
Ed Barnard,
Steffen Ganschow,
Archana Raja,
Lane W. Martin,
Long-Qing Chen,
Manfred Fiebig,
Keji Lai,
Nicola A. Spaldin,
David A. Muller,
Darrell G. Schlom,
Ramamoorthy Ramesh
Abstract:
In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers con…
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In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric (polar) fields can both remove and introduce centrosymmetry from the system resulting in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases coincides with simultaneous changes in the non-linear optical response of over three orders of magnitude, a change in resistivity of over five orders of magnitude, and a change in the polar order. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses.
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Submitted 2 January, 2022;
originally announced January 2022.
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Controlling magnetic configuration in soft-hard bilayers probed by polarized neutron reflectometry
Authors:
Nan Tang,
Jung-Wei Liao,
Siu-Tat Chui,
Timothy Ziman,
Kai Liu6 Chih-Huang Lai,
Brian J. Kirby,
Dustin A. Gilbert
Abstract:
Hard/soft magnetic bilayer thin films have been widely used in data storage technologies and permanent magnet applications. The magnetic configuration and response to temperatures and magnetic fields in these heterostructures are considered to be highly dependent on the interfacial coupling. However, the intrinsic properties of each of the layers, such as the saturation magnetization and layer thi…
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Hard/soft magnetic bilayer thin films have been widely used in data storage technologies and permanent magnet applications. The magnetic configuration and response to temperatures and magnetic fields in these heterostructures are considered to be highly dependent on the interfacial coupling. However, the intrinsic properties of each of the layers, such as the saturation magnetization and layer thickness, also strongly influence the magnetic configuration. Changing these parameters provides an effective method to tailor magnetic properties in composite magnets. Here, we use polarized neutron reflectometry (PNR) to experimentally probe the interfacial magnetic configurations in hard/soft bilayer thin films: L10-FePt/A1-FePt, [Co/Pd] /CoPd, [Co/Pt] /FeNi and L10-FePt/Fe, which all have a perpendicular magnetic anisotropy in the hard layer. These films were designed with different soft and hard layer thicknesses (t_soft and t_hard) and saturation magnetization (M_s^soft and M_s^hard), respectively. The influences of an in-plane magnetic field (H_ip) and temperature (T) are also studied using a L10 FePt/A1-FePt bilayer sample. Comparing the PNR results to micromagnetic simulations reveals that the interfacial magnetic configuration is highly dependent on t_soft, M_s^soft and the external factors (H_ip and T), and has a relatively weak dependence on t_hard and M_s^hard. Key among these results, for thin t_soft, the hard and soft layers are rigidly coupled in the out-of-plane direction, then undergo a transition to relax in-plane. This transition can be delayed to larger t_soft by decreasing M_s^soft. Understanding the influence of these parameters on the magnetic configuration is critical to designing functional composite magnets for applications.
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Submitted 23 November, 2021;
originally announced November 2021.
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Mode-selective Single-dipole Excitation and Controlled Routing of Guided Waves in a Multi-mode Topological Waveguide
Authors:
Yandong Li,
Yang Yu,
Kueifu Lai,
Yuchen Han,
Fei Gao,
Baile Zhang,
Gennady Shvets
Abstract:
Topology-linked binary degrees of freedom of guided waves have been used to expand the channel capacity of and to ensure robust transmission through photonic waveguides. However, selectively exciting optical modes associated with the desired degree of freedom is challenging and typically requires spatially extended sources or filters. Both approaches are incompatible with the ultimate objective of…
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Topology-linked binary degrees of freedom of guided waves have been used to expand the channel capacity of and to ensure robust transmission through photonic waveguides. However, selectively exciting optical modes associated with the desired degree of freedom is challenging and typically requires spatially extended sources or filters. Both approaches are incompatible with the ultimate objective of develo** compact mode-selective sources powered by single emitters. In addition, the implementation of highly desirable functionalities, such as controllable distribution of guided modes between multiple detectors, becomes challenging in highly-compact devices due to photon loss to reflections. Here, we demonstrate that a linearly-polarized dipole-like source can selectively excite a topologically robust edge mode with the desired valley degree of freedom. Reflection-free routing of valley-polarized edge modes into two spatially-separated detectors with reconfigurable splitting ratios is also presented. An optical implementation of such a source will have the potential to broaden the applications of topological photonic devices.
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Submitted 17 April, 2022; v1 submitted 11 November, 2021;
originally announced November 2021.
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Current-induced superconducting anisotropy of Sr$\mathsf{_2}$RuO$\mathsf{_4}$
Authors:
R. Araki,
T. Miyoshi,
H. Suwa,
E. I. Paredes Aulestia,
K. Y. Yip,
Kwing To Lai,
S. K. Goh,
Y. Maeno,
S. Yonezawa
Abstract:
In the unconventional superconductor Sr$\mathsf{_2}$RuO$\mathsf{_4}$, unusual first-order superconducting transition has been observed in the low-temperature and high-field region, accompanied by a four-fold anisotropy of the in-plane upper critical magnetic field $H_{c2}$. The origin of such unusual $H_{c2}$ behavior should be closely linked to the debated superconducting symmetry of this oxide.…
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In the unconventional superconductor Sr$\mathsf{_2}$RuO$\mathsf{_4}$, unusual first-order superconducting transition has been observed in the low-temperature and high-field region, accompanied by a four-fold anisotropy of the in-plane upper critical magnetic field $H_{c2}$. The origin of such unusual $H_{c2}$ behavior should be closely linked to the debated superconducting symmetry of this oxide. Here, toward clarification of the unusual $H_{c2}$ behavior, we performed the resistivity measurements capable of switching in-plane current directions as well as precisely controlling the field directions. Our results reveal that resistive $H_{c2}$ under the in-plane current exhibits an additional two-fold anisotropy. By systematically analyzing $H_{c2}$ data taken under various current directions, we succeeded in separating the two-fold $H_{c2}$ component into the one originating from applied current and the other originating from certain imperfection in the sample. The former component, attributable to vortex flow effect, is weakened at low temperatures where $H_{c2}$ is substantially suppressed. The latter component is enhanced in the first order transition region, possibly reflecting a change in the nature of the superconducting state under high magnetic field.
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Submitted 11 November, 2021;
originally announced November 2021.
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Fragile pressure-induced magnetism in FeSe superconductors with a thickness reduction
Authors:
Jianyu Xie,
Xinyou Liu,
Wei Zhang,
Sum Ming Wong,
Xuefeng Zhou,
Yusheng Zhao,
Shanmin Wang,
Kwing To Lai,
Swee K. Goh
Abstract:
The emergence of high transition temperature ($T_c$) superconductivity in bulk FeSe under pressure is associated with the tuning of nematicity and magnetism. However, sorting out the relative contributions from magnetic and nematic fluctuations to the enhancement of $T_c$ remains challenging. Here, we design and conduct a series of high-pressure experiments on FeSe thin flakes. We find that, as th…
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The emergence of high transition temperature ($T_c$) superconductivity in bulk FeSe under pressure is associated with the tuning of nematicity and magnetism. However, sorting out the relative contributions from magnetic and nematic fluctuations to the enhancement of $T_c$ remains challenging. Here, we design and conduct a series of high-pressure experiments on FeSe thin flakes. We find that, as the thickness decreases, the nematic phase boundary on temperature-pressure phase diagrams remains robust while the magnetic order is significantly weakened. A local maximum of $T_c$ is observed outside the nematic phase region, not far from the extrapolated nematic endpoint in all samples. However, the maximum $T_c$ value is reduced associated with the weakening of magnetism. No high-$T_c$ phase is observed in the thinnest sample. Our results strongly suggest that nematic fluctuations alone can only have a limited effect while magnetic fluctuations are pivotal on the enhancement of $T_c$ in FeSe.
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Submitted 28 October, 2021;
originally announced October 2021.
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Pressure-induced enhancement of the superconducting transition temperature in La2O2Bi3AgS6
Authors:
Esteban I. Paredes Aulestia,
Xinyou Liu,
Yiu Yung Pang,
Chun Wa So,
Wing Chi Yu,
Swee K. Goh,
Kwing To Lai
Abstract:
Charge density wave (CDW) instability is often found in phase diagrams of superconductors such as cuprates and certain transition-metal dichalcogenides. This proximity to superconductivity triggers the question on whether CDW instability is responsible for the pairing of electrons in these superconductors. However, this issue remains unclear and new systems are desired to provide a better picture.…
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Charge density wave (CDW) instability is often found in phase diagrams of superconductors such as cuprates and certain transition-metal dichalcogenides. This proximity to superconductivity triggers the question on whether CDW instability is responsible for the pairing of electrons in these superconductors. However, this issue remains unclear and new systems are desired to provide a better picture. Here, we report the temperature-pressure phase diagram of a recently discovered BiS$_2$ superconductor La$_2$O$_2$Bi$_3$AgS$_6$, which shows a possible CDW transition at $T^*\sim$155 K and a superconducting transition at $T_c\sim$1.0 K at ambient pressure, via electrical resistivity measurements. Upon applying pressure, $T^*$ decreases linearly and extrapolates to 0 K at 3.9 GPa. Meanwhile, $T_c$ is enhanced and reaches maximum value of 4.1 K at 3.1 GPa, forming a superconducting dome in the temperature-pressure phase diagram.
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Submitted 28 October, 2021;
originally announced October 2021.
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Visualization of Acoustic Power Flow in Suspended Thin-film Lithium Niobate Phononic Devices
Authors:
Daehun Lee,
Shawn Meyer,
Songbin Gong,
Ruochen Lu,
Keji Lai
Abstract:
We report direct visualization of gigahertz-frequency acoustic waves in lithium niobate phononic circuits. Primary propagation parameters, such as the power flow angle (PFA) and propagation loss (PL), are measured by transmission-mode microwave impedance microscopy (TMIM). Using fast Fourier transform, we can separately analyze forward and backward propagating waves and quantitatively evaluate the…
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We report direct visualization of gigahertz-frequency acoustic waves in lithium niobate phononic circuits. Primary propagation parameters, such as the power flow angle (PFA) and propagation loss (PL), are measured by transmission-mode microwave impedance microscopy (TMIM). Using fast Fourier transform, we can separately analyze forward and backward propagating waves and quantitatively evaluate the propagation loss. Our work provides insightful information on the propagation, diffraction, and attenuation in piezoelectric thin films, which is highly desirable for designing and optimizing phononic devices for microwave signal processing.
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Submitted 30 September, 2021;
originally announced October 2021.
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Superior Photo-carrier Diffusion Dynamics in Organic-inorganic Hybrid Perovskites Revealed by Spatiotemporal Conductivity Imaging
Authors:
Xuejian Ma,
Fei Zhang,
Zhaodong Chu,
Ji Hao,
Xihan Chen,
Jiamin Quan,
Zhiyuan Huang,
Xiaoming Wang,
Xiaoqin Li,
Yanfa Yan,
Kai Zhu,
Keji Lai
Abstract:
The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two re…
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The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 microsecond and 10 microseconds correspond to the lifetimes of electrons and holes in FACsPbI3, respectively. Strikingly, the diffusion map** indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3 ~ 5 micrometers) of both carriers are comparable to each other, a feature closely related to the unique charge trap** and de-trap** processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.
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Submitted 4 August, 2021;
originally announced August 2021.
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Importance of dxy orbital and electron correlation in iron-based superconductors revealed by phase diagram for 1111-system
Authors:
T. Kawashima,
S. Miyasaka,
H. Tsuji,
T. Yamamoto,
M. Uekubo,
A. Takemori,
K. T. Lai,
S. Tajima
Abstract:
The structural flexibility at three substitution sites in LaFeAsO enabled investigation of the relation between superconductivity and structural parameters over a wide range of crystal compositions. Substitutions of Nd for La, Sb or P for As, and F or H for O were performed. All these substitutions modify the local structural parameters, while the F/H-substitution also changes band filling. It was…
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The structural flexibility at three substitution sites in LaFeAsO enabled investigation of the relation between superconductivity and structural parameters over a wide range of crystal compositions. Substitutions of Nd for La, Sb or P for As, and F or H for O were performed. All these substitutions modify the local structural parameters, while the F/H-substitution also changes band filling. It was found that the superconducting transition temperature $T_{c}$ is strongly affected by the pnictogen height $h_{Pn}$ from the Fe-plane that controls the electron correlation strength and the size of the $d_{xy}$ hole Fermi surface (FS). With increasing $h_{Pn}$, weak coupling superconductivity switches to the strong coupling one where the $d_{xy}$ hole FS is crucially important.
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Submitted 8 June, 2021;
originally announced June 2021.
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Direct Visualization of Gigahertz Acoustic Wave Propagation in Suspended Phononic Circuits
Authors:
Daehun Lee,
Qiyu Liu,
Lu Zheng,
Xuejian Ma,
Mo Li,
Keji Lai
Abstract:
We report direct visualization of gigahertz-frequency Lamb waves propagation in aluminum nitride phononic circuits by transmission-mode microwave impedance microscopy (TMIM). Consistent with the finite-element modeling, the acoustic eigenmodes in both a horn-shaped coupler and a sub-wavelength waveguide are revealed in the TMIM images. Using fast Fourier transform filtering, we quantitatively anal…
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We report direct visualization of gigahertz-frequency Lamb waves propagation in aluminum nitride phononic circuits by transmission-mode microwave impedance microscopy (TMIM). Consistent with the finite-element modeling, the acoustic eigenmodes in both a horn-shaped coupler and a sub-wavelength waveguide are revealed in the TMIM images. Using fast Fourier transform filtering, we quantitatively analyze the acoustic loss of individual Lamb modes along the waveguide and the power coupling coefficient between the waveguide and the parabolic couplers. Our work provides insightful information on the propagation, mode conversion, and attenuation of acoustic waves in piezoelectric nanostructures, which is highly desirable for designing and optimizing phononic devices for microwave signal processing and quantum information transduction.
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Submitted 27 May, 2021;
originally announced May 2021.
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Monolayer 1T-NbSe2 as a 2D correlated magnetic insulator
Authors:
Mengke Liu,
Joshua Leveillee,
Shuangzan Lu,
Jia Yu,
Hyunsue Kim,
Keji Lai,
Chendong Zhang,
Feliciano Giustino,
Chih-Kang Shih
Abstract:
Monolayer group-V transition metal dichalcogenides in their 1T phase have recently emerged as a platform to investigate rich phases of matter, such as spin liquid and ferromagnetism, resulting from strong electron correlations. Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam…
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Monolayer group-V transition metal dichalcogenides in their 1T phase have recently emerged as a platform to investigate rich phases of matter, such as spin liquid and ferromagnetism, resulting from strong electron correlations. Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam epitaxy (MBE). This discovery has inspired theoretical investigations predicting collective phenomena such as ferromagnetism in two dimensions. Here, by controlling the MBE growth parameters, we demonstrate the successful growth of single-phase 1T-NbSe2. By combining scanning tunneling microscopy/spectroscopy and ab initio calculations, we show that this system is a charge-transfer insulator, with the upper Hubbard band located above the valence band maximum. Furthermore, by creating a vertical 1T/2H NbSe2 heterostructure, we find evidence of exchange interactions between the localized magnetic moments in 1T phase and the metallic/superconducting phase, as manifested by Kondo resonances and Yu-Shiba-Rusinov bound states.
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Submitted 23 March, 2021;
originally announced March 2021.
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Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe
Authors:
Kang Lai,
Sailong Ju,
Hongen Zhu,
Hanwen Wang,
Hongjian Wu,
Bingjie Yang,
Enrui Zhang,
Ming Yang,
Fangsen Li,
Shengtao Cui,
Xiaohui Deng,
Zheng Han,
Mengjian Zhu,
Jiayu Dai
Abstract:
Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in m…
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Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimentally is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. Furthermore, accompanied by the thickness of GaTe increasing from mono- to few-layers, the strong interlayer coupling of GaTe induces direct-indirect-direct band gap transitions and the in-plane anisotropy of hole effective mass is reversed. Our results shed light on the physical origins of in-plane anisotropy of electronic structure in GaTe, paving the way for the design and device applications of nanoelectronics and optoelectronics based on anisotropic layered semiconductors.
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Submitted 22 April, 2022; v1 submitted 27 February, 2021;
originally announced March 2021.
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Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor
Authors:
W. Zhang,
Y. J. Hu,
C. N. Kuo,
S. T. Kuo,
Yue-Wen Fang,
Kwing To Lai,
X. Y. Liu,
K. Y. Yip,
D. Sun,
F. F. Balakirev,
C. S. Lue,
Hanghui Chen,
Swee K. Goh
Abstract:
The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field linear-in-temperature resistivity. These studies suggest a possible role of quantum criticality on the observed linear magnetoresistance. Here, we report our discovery of a…
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The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field linear-in-temperature resistivity. These studies suggest a possible role of quantum criticality on the observed linear magnetoresistance. Here, we report our discovery of a nonsaturating, linear magnetoresistance in Mo$_8$Ga$_{41}$, a nearly isotropic strong electron-phonon coupling superconductor with a linear-in-temperature resistivity from the transition temperature to $\sim$55 K. The growth of the resistivity in field is comparable to that in temperature, provided that both quantities are measured in the energy unit. Our datasets are remarkably similar to magnetoresistance data of the optimally doped La$_{2-x}$Sr$_x$CuO$_4$, despite the clearly different crystal and electronic structures, and the apparent absence of quantum critical physics in Mo$_8$Ga$_{41}$. A new empirical scaling formula is developed, which is able to capture the key features of the low-temperature magnetoresistance data of Mo$_8$Ga$_{41}$, as well as the data of La$_{2-x}$Sr$_x$CuO$_4$.
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Submitted 7 October, 2020;
originally announced October 2020.
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Phonon Renormalization in Reconstructed MoS$_2$ Moiré Superlattices
Authors:
Jiamin Quan,
Lukas Linhart,
Miao-Ling Lin,
Daehun Lee,
Jihang Zhu,
Chun-Yuan Wang,
Wei-Ting Hsu,
Junho Choi,
Jacob Embley,
Carter Young,
Takashi Taniguchi,
Kenji Watanabe,
Chih-Kang Shih,
Keji Lai,
Allan H. MacDonald,
**-Heng Tan,
Florian Libisch,
Xiaoqin Li
Abstract:
In moiré crystals formed by stacking van der Waals (vdW) materials, surprisingly diverse correlated electronic phases and optical properties can be realized by a subtle change in the twist angle. Here, we discover that phonon spectra are also renormalized in MoS$_2$ twisted bilayers, adding a new perspective to moiré physics. Over a range of small twist angles, the phonon spectra evolve rapidly du…
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In moiré crystals formed by stacking van der Waals (vdW) materials, surprisingly diverse correlated electronic phases and optical properties can be realized by a subtle change in the twist angle. Here, we discover that phonon spectra are also renormalized in MoS$_2$ twisted bilayers, adding a new perspective to moiré physics. Over a range of small twist angles, the phonon spectra evolve rapidly due to ultra-strong coupling between different phonon modes and atomic reconstructions of the moiré pattern. We develop a new low-energy continuum model for phonons that overcomes the outstanding challenge of calculating properties of large moiré supercells and successfully captures essential experimental observations. Remarkably, simple optical spectroscopy experiments can provide information on strain and lattice distortions in moiré crystals with nanometer-size supercells. The newly developed theory promotes a comprehensive and unified understanding of structural, optical, and electronic properties of moiré superlattices.
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Submitted 22 September, 2020;
originally announced September 2020.
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Effects of applied mechanical strain on vacancy clustering in FCC Ni
Authors:
Shasha Huang,
Haohua Wen,
Qing Guo,
Biao Wang,
Kan Lai
Abstract:
Irradiation-induced vacancy evolution in face-centered cubic (FCC) Ni under mechanical strains was studied using molecular dynamics simulations. Applied hydrostatic strain led to different stable forms of vacancy clusters, i.e., voids under strain >= +2% and stacking fault tetrahedras (SFTs) under strain <= 0. Direct transitions between SFT and void revealed that increasing strain magnitude facili…
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Irradiation-induced vacancy evolution in face-centered cubic (FCC) Ni under mechanical strains was studied using molecular dynamics simulations. Applied hydrostatic strain led to different stable forms of vacancy clusters, i.e., voids under strain >= +2% and stacking fault tetrahedras (SFTs) under strain <= 0. Direct transitions between SFT and void revealed that increasing strain magnitude facilitated the thermodynamic stability and dynamical evolution. The estimated free energy difference could well validate the dynamical simulations results by accounting for entropic contribution, which was revealed to play an important role in the thermodynamic stability of vacancy clusters in FCC Ni.
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Submitted 13 August, 2020;
originally announced August 2020.
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Nanoscale Conductivity Imaging of Correlated Electronic States in WSe2/WS2 Moiré Superlattices
Authors:
Zhaodong Chu,
Emma C Regan,
Xuejian Ma,
Danqing Wang,
Zifan Xu,
M. Iqbal Bakti Utama,
Kentaro Yumigeta,
Mark Blei,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Feng Wang,
Keji Lai
Abstract:
We report the nanoscale conductivity imaging of correlated electronic states in angle-aligned WSe2/WS2 heterostructures using microwave impedance microscopy. The noncontact microwave probe allows us to observe the Mott insulating state with one hole per moiré unit cell that persists for temperatures up to 150 K, consistent with other characterization techniques. In addition, we identify for the fi…
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We report the nanoscale conductivity imaging of correlated electronic states in angle-aligned WSe2/WS2 heterostructures using microwave impedance microscopy. The noncontact microwave probe allows us to observe the Mott insulating state with one hole per moiré unit cell that persists for temperatures up to 150 K, consistent with other characterization techniques. In addition, we identify for the first time a Mott insulating state at one electron per moiré unit cell. Appreciable inhomogeneity of the correlated states is directly visualized in the hetero-bilayer region, indicative of local disorders in the moiré superlattice potential or electrostatic do**. Our work provides important insights on 2D moiré systems down to the microscopic level.
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Submitted 13 July, 2020;
originally announced July 2020.
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Stabilization of antiferromagnetism in 1T-Fe$_{0.05}$TaS$_2$
Authors:
Q. Niu,
W. Zhang,
Y. T. Chan,
E. C. T. O'Farrell,
R. Doganov,
K. Y. Yip,
Kwing To Lai,
W. C. Yu,
B. Ozyilmaz,
G. R. Stewart,
J. S. Kim,
Swee K. Goh
Abstract:
1T-TaS$_2$ is a prototypical charge-density-wave (CDW) system with a Mott insulating ground state. Usually, a Mott insulator is accompanied by an antiferromagnetic state. However, the antiferromagnetic order had never been observed in 1T-TaS$_2$. Here, we report the stabilization of the antiferromagnetic order by the intercalation of a small amount of Fe into the van der Waals gap of 1T-TaS$_2$, i…
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1T-TaS$_2$ is a prototypical charge-density-wave (CDW) system with a Mott insulating ground state. Usually, a Mott insulator is accompanied by an antiferromagnetic state. However, the antiferromagnetic order had never been observed in 1T-TaS$_2$. Here, we report the stabilization of the antiferromagnetic order by the intercalation of a small amount of Fe into the van der Waals gap of 1T-TaS$_2$, i.e. forming 1T-Fe$_{0.05}$TaS$_2$. Upon cooling from 300~K, the electrical resistivity increases with a decreasing temperature before reaching a maximum value at around 15~K, which is close to the Neel temperature determined from our magnetic susceptibility measurement. The antiferromagnetic state can be fully suppressed when the sample thickness is reduced, indicating that the antiferromagnetic order in Fe$_{0.05}$TaS$_2$ has a non-negligible three-dimensional character. For the bulk Fe$_{0.05}$TaS$_2$, a comparison of our high pressure electrical transport data with that of 1T-TaS$_2$ indicates that, at ambient pressure, Fe$_{0.05}$TaS$_2$ is in the nearly commensurate charge-density-wave (NCCDW) phase near the border of the Mott insulating state. The temperature-pressure phase diagram thus reveals an interesting decoupling of the antiferromagnetism from the Mott insulating state.
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Submitted 9 June, 2020;
originally announced June 2020.
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Investigation of plasmonic evolution of atomically size-selected Au clusters by electron energy loss spectrum--from solid state to molecular scale
Authors:
Siqi Lu,
Lin Xie,
Kang Lai,
Runkun Chen,
Lu Cao,
Kuojuei Hu,
Xuefeng Wang,
**sen Han,
Xiangang Wan,
Jiaqing He,
Jiayu Dai,
Jianing Chen,
Qing Dai,
Zhenlin Wang,
Guanghou Wang,
Fengqi Song
Abstract:
Versatile quantum modes emerge for plasmon describing the collective oscillations of free electrons in metallic nanoparticles when the particle sizes are greatly reduced. Rather than traditional nanoscale study, the understanding of quantum plasmon desires extremal atomic control of the nanoparticles, calling for size dependent plasmon measurement over a series of nanoparticles with atomically adj…
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Versatile quantum modes emerge for plasmon describing the collective oscillations of free electrons in metallic nanoparticles when the particle sizes are greatly reduced. Rather than traditional nanoscale study, the understanding of quantum plasmon desires extremal atomic control of the nanoparticles, calling for size dependent plasmon measurement over a series of nanoparticles with atomically adjustable atom number over several orders of magnitude. Here we report the N dependent plasmonic evolution of atomically size selected gold particles with N= 100 70000 using electron energy loss (EEL) spectroscopy in a scanning transmission electron microscope. The EEL map** assigns a feature at 2.7 eV as the bulk plasmon and another at 2.4 eV as surface plasmon, which evolution reveals three regimes. When N decreases from 70000 to 887, the bulk plasmon stays unchanged while the surface plasmon exhibits a slight red shift from 2.4 to 2.3 eV. It can be understood by the dominance of classical plasmon physics and electron boundary scattering induced retardation. When N further decreases from 887 to 300, the bulk plasmon disappears totally and the surface plasmon shows a steady blueshift, which indicates that the quantum confinement emerges and modifies the intraband transition. When N 100 300, the plasmon is split to three fine features, which is attributed to superimposed single electron transitions between the quantized molecular like energy level by the time dependent density functional theory calculations. The surface plasmon's excitation ratio has a scaling law with an exponential dependence on N ( N^0.669), essentially the square of the radius. A unified evolution picture from the classical to quantum, molecular plasmon is thus demonstrated.
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Submitted 24 March, 2020;
originally announced March 2020.
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Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging
Authors:
Zhaodong Chu,
Chun-Yuan Wang,
Jiamin Quan,
Chenhui Zhang,
Chao Lei,
Ali Han,
Xuejian Ma,
Hao-Ling Tang,
Dishan Abeysinghe,
Matthew Staab,
Xixiang Zhang,
Allan H. MacDonald,
Vincent Tung,
Xiaoqin Li,
Chih-Kang Shih,
Keji Lai
Abstract:
The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spat…
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The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals respectively. Time-resolved experiments indicate that the critical process for photo-excited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the photoconductivity is stronger in CVD samples than exfoliated monolayers with a lower defect density. Our work reveals the intrinsic time and length scales of electrical response to photo-excitation in van der Waals materials, which is essential for their applications in novel optoelectronic devices.
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Submitted 3 March, 2020;
originally announced March 2020.
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Emergence of Competing Stripe Phase near the Mott Transition in Ti-doped Bilayer Calcium Ruthenates
Authors:
Ashish Gangshettiwar,
Yanglin Zhu,
Zhanzhi Jiang,
** Peng,
Yu Wang,
Jiaming He,
Jianshi Zhou,
Zhiqiang Mao,
Keji Lai
Abstract:
We report the nanoscale imaging of Ti-doped bilayer calcium ruthenates during the Mott metal-insulator transition by microwave impedance microscopy. Different from a typical first-order phase transition where coexistence of the two terminal phases takes place, a new metallic stripe phase oriented along the in-plane crystalline axes emerges inside both the G-type antiferromagnetic insulating state…
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We report the nanoscale imaging of Ti-doped bilayer calcium ruthenates during the Mott metal-insulator transition by microwave impedance microscopy. Different from a typical first-order phase transition where coexistence of the two terminal phases takes place, a new metallic stripe phase oriented along the in-plane crystalline axes emerges inside both the G-type antiferromagnetic insulating state and paramagnetic metallic state. The effect of this electronic state can be observed in macroscopic measurements, allowing us to construct a phase diagram that takes into account the energetically competing phases. Our work provides a model approach to correlate the macroscopic properties and mesoscopic phase separation in complex oxide materials.
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Submitted 24 February, 2020;
originally announced February 2020.
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Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator
Authors:
Ryo Noguchi,
Masaru Kobayashi,
Zhanzhi Jiang,
Kenta Kuroda,
Takanari Takahashi,
Zifan Xu,
Daehun Lee,
Motoaki Hirayama,
Masayuki Ochi,
Tetsuroh Shirasawa,
Peng Zhang,
Chun Lin,
Cédric Bareille,
Shunsuke Sakuragi,
Hiroaki Tanaka,
So Kunisada,
Kifu Kurokawa,
Koichiro Yaji,
Ayumi Harasawa,
Viktor Kandyba,
Alessio Giampietri,
Alexei Barinov,
Timur K. Kim,
Cephise Cacho,
Makoto Hashimoto
, et al. (6 additional authors not shown)
Abstract:
The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingl…
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The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.
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Submitted 10 February, 2021; v1 submitted 4 February, 2020;
originally announced February 2020.
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Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall
Authors:
Yen-Lin Huang,
Lu Zheng,
Peng Chen,
Xiaoxing Cheng,
Shang-Lin Hsu,
Tiannan Yang,
Xiaoyu Wu,
Louis Ponet,
Ramamoorthy Ramesh,
Long-Qing Chen,
Sergey Artyukhin,
Ying-Hao Chu,
Keji Lai
Abstract:
Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the giga-Hertz (GHz) regime, where the effect of dipolar oscillation is important. In this work, an unexpected giant GHz conductivity on the order of 103…
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Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the giga-Hertz (GHz) regime, where the effect of dipolar oscillation is important. In this work, an unexpected giant GHz conductivity on the order of 103 S/m is observed in certain BiFeO3 DWs, which is about 100,000 times greater than the carrier-induced dc conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the ac conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for RF applications.
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Submitted 6 January, 2020;
originally announced January 2020.
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Opto-electronic properties of alpha-In2Se3: single-layer to bulk
Authors:
Yu** Cho,
Sean M. Anderson,
Bernardo S. Mendoza,
Shun Okano,
Ramon Carriles,
N. Arzate,
Anatoli I. Shkrebtii,
Di Wu,
Keji Lai,
D. R. T. Zahn,
M. C. Downer
Abstract:
In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.
In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.
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Submitted 29 November, 2019; v1 submitted 5 November, 2019;
originally announced November 2019.
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Coherent Acoustic Control of a Single Silicon Vacancy Spin in Diamond
Authors:
Smarak Maity,
Linbo Shao,
Stefan Bogdanović,
Srujan Meesala,
Young-Ik Sohn,
Neil Sinclair,
Benjamin **ault,
Michelle Chalupnik,
Cleaven Chia,
Lu Zheng,
Keji Lai,
Marko Lončar
Abstract:
Phonons are considered to be universal quantum transducers due to their ability to couple to a wide variety of quantum systems. Among these systems, solid-state point defect spins are known for being long-lived optically accessible quantum memories. Recently, it has been shown that inversion-symmetric defects in diamond, such as the negatively charged silicon vacancy center (SiV), feature spin qub…
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Phonons are considered to be universal quantum transducers due to their ability to couple to a wide variety of quantum systems. Among these systems, solid-state point defect spins are known for being long-lived optically accessible quantum memories. Recently, it has been shown that inversion-symmetric defects in diamond, such as the negatively charged silicon vacancy center (SiV), feature spin qubits that are highly susceptible to strain. Here, we leverage this strain response to achieve coherent and low-power acoustic control of a single SiV spin, and perform acoustically driven Ramsey interferometry of a single spin. Our results demonstrate a novel and efficient method of spin control for these systems, offering a path towards strong spin-phonon coupling and phonon-mediated hybrid quantum systems.
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Submitted 23 October, 2019; v1 submitted 21 October, 2019;
originally announced October 2019.
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Detection of hole pockets in the candidate type-II Weyl semimetal MoTe$_2$ from Shubnikov-de Haas quantum oscillations
Authors:
Y. J. Hu,
W. C. Yu,
Kwing To Lai,
D. Sun,
F. F. Balakirev,
W. Zhang,
J. Y. Xie,
K. Y. Yip,
E. I. Paredes Aulestia,
Rajveer Jha,
Ryuji Higashinaka,
Tatsuma D. Matsuda,
Y. Yanase,
Yuji Aoki,
Swee K. Goh
Abstract:
The bulk electronic structure of $T_d$-MoTe$_2$ features large hole Fermi pockets at the Brillouin zone center ($Γ$) and two electron Fermi surfaces along the $Γ-X$ direction. However, the large hole pockets, whose existence has important implications for the Weyl physics of $T_d$-MoTe$_2$, has never been conclusively detected in quantum oscillations. This raises doubt about the realizability of M…
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The bulk electronic structure of $T_d$-MoTe$_2$ features large hole Fermi pockets at the Brillouin zone center ($Γ$) and two electron Fermi surfaces along the $Γ-X$ direction. However, the large hole pockets, whose existence has important implications for the Weyl physics of $T_d$-MoTe$_2$, has never been conclusively detected in quantum oscillations. This raises doubt about the realizability of Majorana states in $T_d$-MoTe$_2$, because these exotic states rely on the existence of Weyl points, which originated from the same band structure predicted by density functional theory (DFT). Here, we report an unambiguous detection of these elusive hole pockets via Shubnikov-de Haas (SdH) quantum oscillations. At ambient pressure, the quantum oscillation frequencies for these pockets are 988 T and 1513 T, when the magnetic field is applied along the $c$-axis. The quasiparticle effective masses $m^*$ associated with these frequencies are 1.50 $m_e$ and 2.77 $m_e$, respectively, indicating the importance of Coulomb interactions in this system. We further measure the SdH oscillations under pressure. At 13 kbar, we detected a peak at 1798 T with $m^*$ = 2.86 $m_e$. Relative to the oscillation data at a lower pressure, the amplitude of this peak experienced an enhancement, which can be attributed to the reduced curvature of the hole pockets under pressure. Combining our experimental data with DFT + $U$ calculations, where $U$ is the Hubbard parameter, our results shed light on why these important hole pockets have not been detected until now.
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Submitted 10 February, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Activation of nominally silent domain wall-localized phonons from GHz to THz frequencies
Authors:
Peng Chen,
Louis Ponet,
Keji Lai,
Roberto Cingolani,
Sergey Artyukhin
Abstract:
Ferroelectric domain walls (DWs) are nanoscale topological defects that can be easily tailored to create nanoscale devices. Their excitations, recently discovered to be responsible for DW GHz conductivity, hold promise for faster signal transmission and processing speed compared to the existing technology. Here we find that DW phonons disperse from GHz to THz frequencies, thus explaining the origi…
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Ferroelectric domain walls (DWs) are nanoscale topological defects that can be easily tailored to create nanoscale devices. Their excitations, recently discovered to be responsible for DW GHz conductivity, hold promise for faster signal transmission and processing speed compared to the existing technology. Here we find that DW phonons disperse from GHz to THz frequencies, thus explaining the origin of the surprisingly broad GHz signature in DW conductivity. Puzzling activation of nominally silent DW sliding modes in BiFeO3 is traced back to DW tilting and resulting asymmetry in wall-localized phonons. The obtained phonon spectra and selection rules are used to simulate scanning impedance microscopy, emerging as a powerful probe in nanophononics. The results will guide experimental discovery of the predicted phonon branches and design of DW-based nanodevices.
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Submitted 30 July, 2019;
originally announced July 2019.
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Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP
Authors:
Q. Niu,
W. C. Yu,
E. I. Paredes Aulestia,
Y. J. Hu,
Kwing To Lai,
H. Kotegawa,
E. Matsuoka,
H. Sugawara,
H. Tou,
D. Sun,
F. F. Balakirev,
Y. Yanase,
Swee K. Goh
Abstract:
The band structure of high carrier density metal CrP features an interesting crossing at the Y point of the Brillouin zone. The crossing, which is protected by the nonsymmorphic symmetry of the space group, results in a hybrid, semi-Dirac-like energy-momentum dispersion relation near Y. The linear energy-momentum dispersion relation along Y-$Γ$ is reminiscent of the observed band structure in seve…
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The band structure of high carrier density metal CrP features an interesting crossing at the Y point of the Brillouin zone. The crossing, which is protected by the nonsymmorphic symmetry of the space group, results in a hybrid, semi-Dirac-like energy-momentum dispersion relation near Y. The linear energy-momentum dispersion relation along Y-$Γ$ is reminiscent of the observed band structure in several semimetallic extremely large magnetoresistance (XMR) materials. We have measured the transverse magnetoresistance of CrP up to 14 T at temperatures as low as $\sim$ 16 mK. Our data reveal a nonsaturating, quadratic magnetoresistance as well as the behaviour of the so-called `turn-on' temperature in the temperature dependence of resistivity. Despite the difference in the magnitude of the magnetoresistance and the fact that CrP is not a semimetal, these features are qualitatively similar to the observations reported for XMR materials. Thus, the high-field electrical transport studies of CrP offer the prospect of identifying the possible origin of the nonsaturating, quadratic magnetoresistance observed in a wide range of metals.
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Submitted 14 March, 2019;
originally announced March 2019.
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Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$
Authors:
Y. J. Hu,
Yuk Tai Chan,
Kwing To Lai,
Kin On Ho,
Xiaoyu Guo,
Hai-Peng Sun,
K. Y. Yip,
Dickon H. L. Ng,
Hai-Zhou Lu,
Swee K. Goh
Abstract:
Superconductivity in the type-II Weyl semimetal candidate MoTe$_2$ has attracted much attention due to the possible realization of topological superconductivity. Under applied pressure, the superconducting transition temperature is significantly enhanced, while the structural transition from the high-temperature 1$T'$ phase to the low-temperature $T_d$ phase is suppressed. Hence, applying pressure…
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Superconductivity in the type-II Weyl semimetal candidate MoTe$_2$ has attracted much attention due to the possible realization of topological superconductivity. Under applied pressure, the superconducting transition temperature is significantly enhanced, while the structural transition from the high-temperature 1$T'$ phase to the low-temperature $T_d$ phase is suppressed. Hence, applying pressure allows us to investigate the dimensionality of superconductivity in 1$T'$-MoTe$_2$. We have performed a detailed study of the magnetotransport properties and upper critical field $H_{c2}$ of MoTe$_2$ under pressure. The magnetoresistance (MR) and Hall coefficient of MoTe$_2$ are found to be decreasing with increasing pressure. In addition, the Kohler's scalings for the MR data above $\sim$11 kbar show a change of exponent whereas the data at lower pressure can be well scaled with a single exponent. These results are suggestive of a Fermi surface reconstruction when the structure changes from the $T_d$ to 1$T'$ phase. The $H_{c2}$-temperature phase diagram constructed at 15 kbar, with $H\parallel ab$ and $H\perp ab$, can be satisfactorily described by the Werthamer-Helfand-Hohenberg model with the Maki parameters $α\sim$ 0.77 and 0.45, respectively. The relatively large $α$ may stem from a small Fermi surface and a large effective mass of semimetallic MoTe$_2$. The angular dependence of $H_{c2}$ at 15 kbar can be well fitted by the Tinkham model, suggesting the two-dimensional nature of superconductivity in the high-pressure 1$T'$ phase.
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Submitted 13 March, 2019;
originally announced March 2019.
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Topologically Protected Photonic Modes in Composite Quantum Hall/Quantum Spin Hall Waveguides
Authors:
Shukai Ma,
Bo Xiao,
Yang Yu,
Kueifu Lai,
Gennady Shvets,
Steven M. Anlage
Abstract:
Photonic topological systems, the electromagnetic analog of the topological materials in condensed matter physics, create many opportunities to design optical devices with novel properties. We present an experimental realization of the bi-anisotropic meta waveguide photonic system replicating both quantum Hall (QH) and quantum spin-Hall (QSH) topological insulating phases. With careful design, a c…
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Photonic topological systems, the electromagnetic analog of the topological materials in condensed matter physics, create many opportunities to design optical devices with novel properties. We present an experimental realization of the bi-anisotropic meta waveguide photonic system replicating both quantum Hall (QH) and quantum spin-Hall (QSH) topological insulating phases. With careful design, a composite QH-QSH photonic topological material is created and experimentally shown to support reflection-free edgemodes, a heterogeneous topological structure that is unprecedented in condensed matter physics. The effective spin degree of freedom of such topologically protected modes determines their unique pathways through these systems, free from backscattering and able to travel around sharp corners. {As an example of their novel properties, we experimentally demonstrate reflection-less photonic devices including a 2-port isolator, a unique 3-port topological device, and a full 4-port circulator based on composite QH and QSH structures
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Submitted 13 August, 2019; v1 submitted 10 March, 2019;
originally announced March 2019.
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The Enhanced Ferromagnetism of Single-Layer CrX3 (X=Br and I) by Van der Waals Engineering
Authors:
Hongxing Li,
Yuan-Kai Xu,
Kang Lai,
Wei-Bing Zhang
Abstract:
The recent experimental discovery of intrinsic ferromagnetism in single-layer CrI3 opens a new avenue to low-dimensional spintronics. However, the low Curie temperature Tc=45 K is still a large obstacle to its realistic device application. In this work, we demonstrate that the Tc and magnetic moment of CrX3(X=Br, I) can be enhanced simultaneously by coupling them to buckled two-dimensional Mene (M…
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The recent experimental discovery of intrinsic ferromagnetism in single-layer CrI3 opens a new avenue to low-dimensional spintronics. However, the low Curie temperature Tc=45 K is still a large obstacle to its realistic device application. In this work, we demonstrate that the Tc and magnetic moment of CrX3(X=Br, I) can be enhanced simultaneously by coupling them to buckled two-dimensional Mene (M=Si, Ge) to form magnetic van der Waals (vdW) heterostructures. Our first-principles calculations reveal that n-do** of CrX3, induced by a significant spin-dependent interlayer charge transfer from Mene, is responsible for its drastic enhancement of Tc and magnetic moment. Furthermore, the diversified electronic properties including halfmetallicity and semi-conductivity with configuration dependent energy gap are also predicted in this novel vdW heterostructure, implying their broad potential applications in spintronics. Our study suggests that the vdW engineering may be an efficient way to tune the magnetic properties of 2D magnets, and the Mene_CrX3 magnetic vdW heterostructures are wonderful candidates in spintronics and nanoelectronics device.
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Submitted 26 February, 2019;
originally announced February 2019.
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Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
Authors:
Di Wu,
Wei Li,
Amritesh Rai,
Xiaoyu Wu,
Hema C. P. Movva,
Maruthi N. Yogeesh,
Zhaodong Chu,
Sanjay K. Banerjee,
Deji Akinwande,
Keji Lai
Abstract:
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical i…
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The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
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Submitted 21 February, 2019;
originally announced February 2019.
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Phononic band structure engineering for high-Q gigahertz surface acoustic wave resonators on lithium niobate
Authors:
Linbo Shao,
Smarak Maity,
Lu Zheng,
Lue Wu,
Amirhassan Shams-Ansari,
Young-Ik Sohn,
Eric Puma,
M. N. Gadalla,
Mian Zhang,
Cheng Wang,
Keji Lai,
Marko Lončar
Abstract:
Phonons at gigahertz frequencies interact with electrons, photons, and atomic systems in solids, and therefore have extensive applications in signal processing, sensing, and quantum technologies. Surface acoustic wave (SAW) resonators that confine surface phonons can play a crucial role in such integrated phononic systems due to small mode size, low dissipation, and efficient electrical transducti…
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Phonons at gigahertz frequencies interact with electrons, photons, and atomic systems in solids, and therefore have extensive applications in signal processing, sensing, and quantum technologies. Surface acoustic wave (SAW) resonators that confine surface phonons can play a crucial role in such integrated phononic systems due to small mode size, low dissipation, and efficient electrical transduction. To date, it has been challenging to achieve high quality (Q) factor and small phonon mode size for SAW resonators at gigahertz frequencies. Here, we present a methodology to design compact high-Q SAW resonators on lithium niobate operating at gigahertz frequencies. We experimentally verify out designs and demonstrate Q factors in excess of $2\times10^4$ at room temperature ($6\times10^4$ at 4 Kelvin) and mode area as low as $1.87 λ^2$. This is achieved by phononic band structure engineering, which provides high confinement with low mechanical loss. The frequency-Q products (fQ) of our SAW resonators are greater than $10^{13}$. These high-fQ and small mode size SAW resonators could enable applications in quantum phononics and integrated hybrid systems with phonons, photons, and solid-state qubits.
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Submitted 29 May, 2019; v1 submitted 25 January, 2019;
originally announced January 2019.
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A modified formula for non-Arrhenius diffusion of helium in metals
Authors:
Haohua Wen,
Kan Lai,
Jianyi Liu,
Yifeng Wu,
Yue Zheng
Abstract:
Helium diffusion in metals is the basic requirement of nucleation and growth of bubble, which gives rise to adverse degradation effects on mechanical properties of structural materials in reactors under irradiation. Lattice based Kinetic Monte Carlo approach is widely adopted to study the evolution of helium-vacancy clustering. However, the imple-mentation of Arrhenius law to prediction the event…
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Helium diffusion in metals is the basic requirement of nucleation and growth of bubble, which gives rise to adverse degradation effects on mechanical properties of structural materials in reactors under irradiation. Lattice based Kinetic Monte Carlo approach is widely adopted to study the evolution of helium-vacancy clustering. However, the imple-mentation of Arrhenius law to prediction the event rate of single interstitial helium solute diffusion in metal is not always appropriate due to low-energy barrier. Based on a stochastic model, a modified formula is derived from the Brownian motion upon a cosine-type potential. Using the parameters obtained from molecular dynamics simulation for the diffusivity of single helium solute in BCC W, the prediction of our model is consistent with the results from dynamical simulation and previous model. This work would help to develop a more accurate KMC scheme for the growth of helium-vacancy clusters, as well as other low-energy reactions in materials science.
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Submitted 22 January, 2019;
originally announced January 2019.
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A practical coarse-grained formula for classical mobility of interstitial helium diffusion in BCC W and Fe
Authors:
Haohua Wen,
Jianyi Liu,
Yifeng Wu,
Kan Lai,
Yue Zheng
Abstract:
Helium diffusion in metals is the basic requirement of nucleation and growth of bubble, which gives rise to adverse degradation effects on mechanical properties of structural materials in reactors under irradiation. Multi-scale modeling scheme has been developed to study effects of helium on the long-term microstructural evolution. However, the implementation of Arrhenius law based on the quasi-eq…
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Helium diffusion in metals is the basic requirement of nucleation and growth of bubble, which gives rise to adverse degradation effects on mechanical properties of structural materials in reactors under irradiation. Multi-scale modeling scheme has been developed to study effects of helium on the long-term microstructural evolution. However, the implementation of Arrhenius law based on the quasi-equilibrium reaction process is not appropriate to predict the migration behavior of helium in metals due to low-energy barrier. A coarse-grained formula is required to incorporate the non-equilibrium nature, e.g., the dissipative friction coefficient $γ$. In this paper, we derive an analytical expression for $γ$ based on a coarse-grained model of Brownian motion upon a periodic potential, in terms of dissipative feature of the thermal excitations in the many-body dynamical system by constructing an adiabatic relaxation process, which is then confirmed by a numerical example of vacancy migration in BCC W. Then the many-body dynamics simulations are performed for helium migration in BCC W and Fe, where the classical mobility are obtained and in good agreement with the data from experiments and other calculations. Finally, we propose a coarse-grained formula for the helium migration in BCC W and Fe, i.e., Eq.(47) in the context, using the calculated parameters from the adiabatic relaxation simulations. This work would help to develop a new multi-scale modeling scheme for effects of helium in metals, as well as the atomistic reactions with low-energy pathways in materials science.
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Submitted 19 November, 2018;
originally announced November 2018.