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Electric field tunable non-linear Hall terahertz detector in Dual quantum spin Hall insulator $\text{TaIrTe}_4$
Authors:
Junwen Lai,
Jie Zhan,
Peitao Liu,
Xing-Qiu Chen,
Yan Sun
Abstract:
Nonlinear Hall effect (NHE) can be generated via Berry curvature dipole (BCD) on nonequilibrium Fermi surface in a non-magnetic system without inversion symmetry.To achieve a large BCD, strong local Berry curvatures and their variation with respect to momentum are necessary and hence topological materials with strong inter-band coupling emerge as promising candidates. In this study, we propose a s…
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Nonlinear Hall effect (NHE) can be generated via Berry curvature dipole (BCD) on nonequilibrium Fermi surface in a non-magnetic system without inversion symmetry.To achieve a large BCD, strong local Berry curvatures and their variation with respect to momentum are necessary and hence topological materials with strong inter-band coupling emerge as promising candidates. In this study, we propose a switchable and robust BCD in the newlydiscovered dual quantum spin Hall insulator (QSHI) $\text{TaIrTe}_4$ by applying out-of-plane electric fields. Switchable BCD could be found along with topological phase transitions or insulator-metal transition in the primitive cell and CDW phases of $\text{TaIrTe}_4$ monolayer. This work presents an instructive strategy for achieving a switchable and robust BCD within dual QSHIs, which should be helpful for designing the NHE-based THz radiations detector.
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Submitted 23 June, 2024;
originally announced June 2024.
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Photohermal Microswimmer Penetrate Cell Membrane with Cavitation Bubble
Authors:
Binglin Zeng,
Jialin Lai,
**gyuan Chen,
Yaxin Huang,
Chang** Wu,
Chao Huang,
Qingxin Guo,
Xiaofeng Li,
Shuai Li,
**yao Tang
Abstract:
Self-propelled micromotors can efficiently convert ambient energy into mechanical motion, which is of great interest for its potential biomedical applications in delivering therapeutics noninvasively. However, navigating these micromotors through biological barriers remains a significant challenge as most micromotors do not provide sufficient disruption forces in in-vivo conditions. In this study,…
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Self-propelled micromotors can efficiently convert ambient energy into mechanical motion, which is of great interest for its potential biomedical applications in delivering therapeutics noninvasively. However, navigating these micromotors through biological barriers remains a significant challenge as most micromotors do not provide sufficient disruption forces in in-vivo conditions. In this study, we employed focused scanning laser from conventional confocal microscope to manipulate carbon microbottle based microswimmers. With the increasing of the laser power, the microswimmers' motions translates from autonomous to directional, and finally the high power laser induced the microswimmer explosions, which effectively deliveres microbottle fragments through the cell membrane. It is revealed that photothermally-induced cavitation bubbles enable the propulsion of microbottles in liquids, where the motion direction can be precisely regulated by the scanning orientation of the laser. Furthermore, the membrane penetration ability of the microbottles promised potential applications in drug delivery and cellular injections. As microbottles navigate toward cells, we strategically increase the laser power to trigger their explosion. By loading microswimmers with transfection genes, cytoplasmic transfection can be realized, which is demonstrated by successful gene transfection of GPF in cells. Our findings open new possibilities for cell injection and gene transfection using micromotors.
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Submitted 18 June, 2024; v1 submitted 18 June, 2024;
originally announced June 2024.
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Prediction of dual quantum spin Hall insulator in NbIrTe$_4$ monolayer
Authors:
Xiangyang Liu,
Junwen Lai,
Jie Zhan,
Tianye Yu,
Wujun Shi,
Peitao Liu,
Xing-Qiu Chen,
Yan Sun
Abstract:
Dual quantum spin Hall insulator (QSHI) is a newly discovered topological state in the 2D material TaIrTe$_4$, exhibiting both a traditional $Z_2$ band gap at charge neutrality point and a van Hove singularity (VHS) induced correlated $Z_2$ band gap with weak do**. Inspired by the recent progress in theoretical understanding and experimental measurements, we predicted a promising dual QSHI in th…
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Dual quantum spin Hall insulator (QSHI) is a newly discovered topological state in the 2D material TaIrTe$_4$, exhibiting both a traditional $Z_2$ band gap at charge neutrality point and a van Hove singularity (VHS) induced correlated $Z_2$ band gap with weak do**. Inspired by the recent progress in theoretical understanding and experimental measurements, we predicted a promising dual QSHI in the counterpart material of the NbIrTe4 monolayer by first-principles calculations. In addition to the well-known band inversion at the charge neutrality point, two new band inversions were found after CDW phase transition when the chemical potential is near the VHS, one direct and one indirect $Z_2$ band gap. The VHS-induced non-trivial band gap is around 10 meV, much larger than that from TaIrTe$_4$. Furthermore, since the new generated band gap is mainly dominated by the $4d$ orbitals of Nb, electronic correlation effects should be relatively stronger in NbIrTe$_4$ as compared to TaIrTe$_4$. Therefore, the dual QSHI state in the NbIrTe$_4$ monolayer is expected to be a good platform for investigating the interplay between topology and correlation effects.
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Submitted 3 June, 2024;
originally announced June 2024.
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Switchable quantized signal between longitudinal conductance and Hall conductance in dual quantum spin Hall insulator TaIrTe$_4$
Authors:
Junwen Lai,
Xiangyang Liu,
Jie Zhan,
Tianye Yu,
Peitao Liu,
Xing-Qiu Chen,
Yan Sun
Abstract:
Topological insulating states in two-dimensional (2D) materials are ideal systems to study different types of quantized response signals due to their in gap metallic states. Very recently, the quantum spin Hall (QSH) effect was discovered in monolayer $\text{TaIrTe}_4$ via the observation of quantized longitudinal conductance that rarely exists in other 2D topological insulators. The non-trivial…
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Topological insulating states in two-dimensional (2D) materials are ideal systems to study different types of quantized response signals due to their in gap metallic states. Very recently, the quantum spin Hall (QSH) effect was discovered in monolayer $\text{TaIrTe}_4$ via the observation of quantized longitudinal conductance that rarely exists in other 2D topological insulators. The non-trivial $Z_2$ topological charges can exist at both charge neutrality point and the van Hove singularity point with correlation effect induced band gap. Based on this model 2D material, we studied the switch of quantized signals between longitudinal conductance and transversal Hall conductance via tuning external magnetic field. In $Z_2$ topological phase of monolayer $\text{TaIrTe}_4$, the zero Chern number can be understood as 1-1=0 from the double band inversion from spin-up and spin-down channels. After applying a magnetic field perpendicular to the plane, the Zeeman split changes the band order for one branch of the band inversion from spin-up and spin-down channels, along with a sign charge of the Berry phase. Then the net Chern number of 1-1=0 is tuned to 1+1=2 or -1-1=-2 depending on the orientation of the magnetic field. The quantized signal not only provides another effective method for the verification of topological state in monolayer $\text{TaIrTe}_4$, but also offers a strategy for the utilization of the new quantum topological states based on switchable quantized responses.
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Submitted 20 April, 2024;
originally announced April 2024.
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Symmetry breaking induced insulating electronic state in Pb$_{9}$Cu(PO$_4$)$_6$O
Authors:
Jiaxi Liu,
Tianye Yu,
Jiangxu Li,
Jiantao Wang,
Junwen Lai,
Yan Sun,
Xing-Qiu Chen,
Peitao Liu
Abstract:
The recent experimental claim of room-temperature ambient-pressure superconductivity in a Cu-doped lead-apatite (LK-99) has ignited substantial research interest in both experimental and theoretical domains. Previous density functional theory (DFT) calculations with the inclusion of an on-site Hubbard interaction $U$ consistently predict the presence of flat bands crossing the Fermi level. This is…
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The recent experimental claim of room-temperature ambient-pressure superconductivity in a Cu-doped lead-apatite (LK-99) has ignited substantial research interest in both experimental and theoretical domains. Previous density functional theory (DFT) calculations with the inclusion of an on-site Hubbard interaction $U$ consistently predict the presence of flat bands crossing the Fermi level. This is in contrast to DFT plus dynamical mean field theory calculations, which reveal the Mott insulating behavior for the stoichiometric Pb$_{9}$Cu(PO$_4$)$_6$O compound. Nevertheless, the existing calculations are all based on the $P6_3/m$ structure, which is argued to be not the ground-state structure. Here, we revisit the electronic structure of Pb$_{9}$Cu(PO$_4$)$_6$O with the energetically more favorable $P\bar{3}$ structure, fully taking into account electronic symmetry breaking. We examine all possible configurations for Cu substituting the Pb sites. Our results show that the doped Cu atoms exhibit a preference for substituting the Pb2 sites than the Pb1 sites. In both cases, the calculated substitutional formation energies are large, indicating the difficulty in incorporating Cu at the Pb sites. We find that most of structures with Cu at the Pb2 site tend to be insulating, while the structures with both two Cu atoms at the Pb1 sites (except one configuration) are predicted to be metallic by DFT+$U$ calculations. However, when accounting for the electronic symmetry breaking, some Cu-doped configurations previously predicted to be metallic (including the structure studied in previous DFT+$U$ calculations) become insulating. Our work highlights the importance of symmetry breaking in obtaining correct electronic state for Pb$_{9}$Cu(PO$_4$)$_6$O, thereby reconciling previous DFT+$U$ and DFT+DMFT calculations.
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Submitted 23 August, 2023; v1 submitted 18 August, 2023;
originally announced August 2023.
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First-principles study on the electronic structure of Pb$_{10-x}$Cu$_x$(PO$_4$)$_6$O ($x$=0, 1)
Authors:
Junwen Lai,
Jiangxu Li,
Peitao Liu,
Yan Sun,
Xing-Qiu Chen
Abstract:
Recently, Lee et al. reported the experimental discovery of room-temperature ambient-pressure superconductivity in a Cu-doped lead-apatite (LK-99) (arXiv:2307.12008, arXiv:2307.12037). Remarkably, the superconductivity persists up to 400 K at ambient pressure. Despite strong experimental evidence, the electronic structure of LK-99 has not yet been studied. Here, we investigate the electronic struc…
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Recently, Lee et al. reported the experimental discovery of room-temperature ambient-pressure superconductivity in a Cu-doped lead-apatite (LK-99) (ar** effects of Cu. Our results reveal that the parent compound Pb$_{10}$(PO$_4$)$_6$O is an insulator, while Cu do** induces an insulator-metal transition and thus volume contraction. The band structures of LK-99 around the Fermi level are featured by a half-filled flat band and a fully-occupied flat band. These two flat bands arise from both the $2p$ orbitals of $1/4$-occupied O atoms and the hybridization of the $3d$ orbitals of Cu with the $2p$ orbitals of its nearest-neighboring O atoms. Interestingly, we observe four van Hove singularities on these two flat bands. Furthermore, we show that the flat band structures can be tuned by including electronic correlation effects or by do** different elements. We find that among the considered do** elements (Ni, Cu, Zn, Ag, and Au), both Ni and Zn do** result in the gap opening, whereas Au exhibits do** effects more similar to Cu than Ag. Our work provides a foundation for future studies on the role of unique electronic structures of LK-99 in superconductivity.
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Submitted 1 August, 2023; v1 submitted 29 July, 2023;
originally announced July 2023.
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Robust anomalous Hall effect in ferromagnetic metal under high pressure
Authors:
Lingling Gao,
Junwen Lai,
Dong Chen,
Cuiying Pei,
Qi Wang,
Yi Zhao,
Changhua Li,
Weizheng Cao,
Juefei Wu,
Yulin Chen,
Xingqiu Chen,
Yan Sun,
Claudia Felser,
Yanpeng Qi
Abstract:
Recently, the giant intrinsic anomalous Hall effect (AHE) has been observed in the materials with kagome lattice. In this study, we systematically investigate the influence of high pressure on the AHE in the ferromagnet LiMn6Sn6 with clean Mn kagome lattice. Our in-situ high-pressure Raman spectroscopy indicates that the crystal structure of LiMn6Sn6 maintains a hexagonal phase under high pressure…
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Recently, the giant intrinsic anomalous Hall effect (AHE) has been observed in the materials with kagome lattice. In this study, we systematically investigate the influence of high pressure on the AHE in the ferromagnet LiMn6Sn6 with clean Mn kagome lattice. Our in-situ high-pressure Raman spectroscopy indicates that the crystal structure of LiMn6Sn6 maintains a hexagonal phase under high pressures up to 8.51 GPa. The anomalous Hall conductivity (AHC) σxyA remains around 150 Ω-1 cm-1, dominated by the intrinsic mechanism. Combined with theoretical calculations, our results indicate that the stable AHE under pressure in LiMn6Sn6 originates from the robust electronic and magnetic structure.
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Submitted 8 July, 2023;
originally announced July 2023.
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Local laser heating effects in diamond probed by photoluminescence of SiV centers at low temperature
Authors:
YuanFei Gao,
JiaMin Lai,
ZhenYao Li,
**Heng Tan,
ChongXin Shan,
Jun Zhang
Abstract:
Diamond is generally considered to have high thermal conductivity, so little attention has been paid to the laser heating effects at low excitation power. However, defects during the growth process can result in a great degradation of thermal conductivity, especially at low temperatures. Here, we observed the dynamic redshift and broadening of zero phonon line (ZPL) of silicon-vacancy (SiV) center…
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Diamond is generally considered to have high thermal conductivity, so little attention has been paid to the laser heating effects at low excitation power. However, defects during the growth process can result in a great degradation of thermal conductivity, especially at low temperatures. Here, we observed the dynamic redshift and broadening of zero phonon line (ZPL) of silicon-vacancy (SiV) centers in diamondin the experiment. Utilizing the intrinsic temperature response of the fine structure spectra of SiV as a probe, we confirmed that the laser heating effect appears and the temperature rising results from high defect concentration. By simulating the thermal diffusion process, we have estimated the thermal conductivity of around 1 W/(mK) at the local site, which is a two order magnitude lower than that of single-crystal diamond. Our results provide a feasible scheme for characterizing the laser heating effect of diamond at low temperatures.
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Submitted 12 June, 2023;
originally announced June 2023.
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XPS analysis of molecular contamination and sp2 amorphous carbon on oxidized (100) diamond
Authors:
Ricardo Vidrio,
Daniel Vincent,
Benjamin Bachman,
Cesar Saucedo,
Maryam Zahedian,
Zihong Xu,
Junyu Lai,
Timothy A. Grotjohn,
Shimon Kolkowitz,
Jung-Hun Seo,
Robert J. Hamers,
Keith G. Ray,
Zhenqiang Ma,
Jennifer T. Choy
Abstract:
The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern which method would yield the highest and most consistent O coverage. Furthermore, the interpretation of surface characterization techniques is complic…
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The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern which method would yield the highest and most consistent O coverage. Furthermore, the interpretation of surface characterization techniques is complicated by surface morphology and purity, which if not accounted for will yield inconsistent determination of the oxygen coverage. We present a comprehensive approach to consistently prepare and analyze oxygen termination of surfaces on (100) single-crystalline diamond. We report on X-ray Photoelectron Spectroscopy (XPS) characterization of diamond surfaces treated with six oxidation methods that include various wet chemical oxidation techniques, photochemical oxidation with UV illumination, and steam oxidation using atomic layer deposition (ALD). Our analysis entails a rigorous XPS peak-fitting procedure for measuring the functionalization of O-terminated diamond. The findings herein have provided molecular-level insights on oxidized surfaces in (100) diamond, including the demonstration of clear correlation between the measured oxygen atomic percentage and the presence of molecular contaminants containing nitrogen, silicon, and sulfur. We also provide a comparison of the sp2 carbon content with the O1s atomic percentage and discern a correlation with the diamond samples treated with dry oxidation which eventually tapers off at a max O1s atomic percentage value of 7.09 +/- 0.40%. Given these results, we conclude that the dry oxidation methods yield some of the highest oxygen amounts, with the ALD water vapor technique proving to be the cleanest technique out of all the oxidation methods explored in this work.
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Submitted 8 May, 2024; v1 submitted 5 April, 2023;
originally announced April 2023.
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Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Authors:
Hongbing Cai,
Abdullah Rasmita,
Qinghai Tan,
Jia-Min Lai,
Ruihua He,
Disheng Chen,
Naizhou Wang,
Zhao Mu,
Zumeng Huang,
Zhaowei Zhang,
John J. H. Eng,
Yuanda Liu,
Yongzhi She,
Nan Pan,
** Wang,
Xiaogang Liu,
Jun Zhang,
Weibo Gao
Abstract:
Localized interlayer excitons (LIXs) in two-dimensional moiré superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree wit…
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Localized interlayer excitons (LIXs) in two-dimensional moiré superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree with the experimental photoluminescence spectra of LIX in the moiré MoSe2/WSe2 heterobilayer. In particular, we find that the emission energy-lifetime correlation and the nonmonotonic power dependence of the lifetime agree well with the DAP IX model. Our results provide insight into the physical mechanism of LIX formation in moiré heterostructures and pave new directions for engineering interlayer exciton properties in moiré superlattices.
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Submitted 25 February, 2023;
originally announced February 2023.
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Ultrafast photothermoelectric effect in Dirac semimetallic Cd3As2 revealed by terahertz emission
Authors:
Wei Lu,
Zipu Fan,
Yunkun Yang,
Junchao Ma,
Jiawei Lai,
Xiaoming Song,
Xiao Zhuo,
Zhaoran Xu,
**g Liu,
Xiaodong Hu,
Shuyun Zhou,
Faxian Xiu,
**luo Cheng,
Dong Sun
Abstract:
The thermoelectric effects of topological semimetals have attracted tremendous research interest because many topological semimetals are excellent thermoelectric materials and thermoelectricity serves as one of their most important potential applications. In this work, we reveal the transient photothermoelectric response of Dirac semimetallic Cd3As2, namely the photo-Seebeck effect and photo-Nerns…
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The thermoelectric effects of topological semimetals have attracted tremendous research interest because many topological semimetals are excellent thermoelectric materials and thermoelectricity serves as one of their most important potential applications. In this work, we reveal the transient photothermoelectric response of Dirac semimetallic Cd3As2, namely the photo-Seebeck effect and photo-Nernst effect, by studying the terahertz (THz) emission from the transient photocurrent induced by these effects. Our excitation polarization and power dependence confirm that the observed THz emission is due to photothermoelectric effect instead of other nonlinear optical effect. Furthermore, when a weak magnetic field (~0.4 T) is applied, the response clearly indicates an order of magnitude enhancement on transient photothermoelectric current generation compared to the photo-Seebeck effect. Such enhancement supports an ambipolar transport nature of the photo-Nernst current generation in Cd3As2. These results highlight the enhancement of thermoelectric performance can be achieved in topological Dirac semimetals based on the Nernst effect, and our transient studies pave the way for thermoelectric devices applicable for high field circumstance when nonequilibrium state matters. The large THz emission due to highly efficient photothermoelectric conversion is comparable to conventional semiconductors through optical rectification and photo-Dember effect.
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Submitted 24 February, 2022;
originally announced February 2022.
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Investigation of the Imperfect Interface at the Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
Authors:
Md Nazmul Hasan,
Yixiong Zheng,
Junyu Lai,
Edward Swinnich,
Olivia Grace Licata,
Mohadeseh A. Baboli,
Baishakhi Mazumder,
Parsian K. Mohseni,
Jung-Hun Seo
Abstract:
The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time periods prior to the hetero-integration process to create the non-ideal single-side passivated Si/GaAs heterostructure. The atomic level oxygen distribution and the d…
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The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time periods prior to the hetero-integration process to create the non-ideal single-side passivated Si/GaAs heterostructure. The atomic level oxygen distribution and the degree of oxygen content in Si NM and GaAs were carefully investigated using the atom probe tomography (APT) and X-ray photoelectron spectroscopy (XPS) to trace the changes in chemical composition and reactional mechanism across the UO interface when the surface of Si NM was exposed to air for different period of time. The negatively induced charges at the UO layer caused the oxygen diffusion to GaAs layer and formed the unwanted GaAs oxide layer. This native oxide stack noticeably degraded the thermal properties of the Si/GaAs heterostructure as Si NMs were more oxidized. This study revealed that the poor surface passivation on the one side of the heterointerface leads to a both-side oxidation, thus severely deteriorating the transport properties across the heterojunction that is formed with the UO layer.
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Submitted 24 October, 2021;
originally announced October 2021.
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Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
Authors:
Md Nazmul Hasan,
Yixiong Zheng,
Junyu Lai,
Edward Swinnich,
Olivia Grace Licata,
Mohadeseh A. Baboli,
Baishakhi Mazumder,
Parsian K. Mohseni,
Jung-Hun Seo
Abstract:
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in the conduction band (0.03 eV) at the interface. The interface defect density (Dit) values of the heterointerface with different ultra-thin oxide (UO) thicknesse…
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We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in the conduction band (0.03 eV) at the interface. The interface defect density (Dit) values of the heterointerface with different ultra-thin oxide (UO) thicknesses ranged from 0.35 nm to 3.5 nm and were also characterized based on a metal-oxide-semiconductor capacitor (MOSCAP) structure using a capacitance-voltage measurement. The results revealed that a thin UO interfacial layer (around 1 nm) maximizes carrier transport property due to better surface passivation and efficient tunneling properties. Thermal property investigation also shows that the Al2O3 UO interfacial layer offers a good tunneling layer but also facilitates phonon transport across the interface. Finally, the electrical characterization of Si/GaAs heterojunction p-n diodes confirms reliable rectifying behavior with an extremely low ideality factor; thus, heterogeneous integration using the UO approach offers a robust way to create more types of heterojunctions between dissimilar semiconductors.
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Submitted 24 October, 2021; v1 submitted 14 July, 2021;
originally announced July 2021.
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Theoretical Prediction of Heterogeneous Integration of Dissimilar Semiconductor with Various Ultra-Thin Oxides and 2D Materials
Authors:
Md Nazmul Hasan,
Chenxi Li,
Junyu Lai,
Jung-Hun Seo
Abstract:
In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron nitride (h-BN) and graphene and ALD-enabled oxide materials such as HfO2, Al2O3, and SiO2. Their tunneling efficiencies and tunneling current with different thickne…
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In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron nitride (h-BN) and graphene and ALD-enabled oxide materials such as HfO2, Al2O3, and SiO2. Their tunneling efficiencies and tunneling current with different thicknesses were systematically calculated and compared. Multiphysics modeling was used with the aforementioned tunneling interfacial materials to analyze changes in strain under different temperature conditions. Considering the transport properties and thermal-induced strain analysis, Al2O3 among three oxide materials and graphene in 2D materials are favorable material choices that offer the highest heterojunction quality. Overall, our results offer the viable route to guide the selection of quantum tunneling materials for myriad possible combinations of new heterostructures that can be obtained via remote epitaxy and the UO method.
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Submitted 4 July, 2021;
originally announced July 2021.
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Observation of Fano resonance in photoluminescence of a two-dimensional magnetic semiconductor
Authors:
**fan Gu,
Qinghai Tan,
Yi Wan,
Ziling Li,
Yuxuan Peng,
Jiawei Lai,
Junchao Ma,
Xiaohan Yao,
Kai Yuan,
Dong Sun,
Bo Peng,
Jun Zhang,
Yu Ye
Abstract:
Quantum interference gives rise to the asymmetric Fano resonance line shape when the final states of an electronic transition follows within a continuum of states and a discrete state, which has significant applications in optical switching and sensing. The resonant optical phenomena associated with Fano resonance have been observed by absorption spectra, Raman spectra, transmission spectra, etc.,…
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Quantum interference gives rise to the asymmetric Fano resonance line shape when the final states of an electronic transition follows within a continuum of states and a discrete state, which has significant applications in optical switching and sensing. The resonant optical phenomena associated with Fano resonance have been observed by absorption spectra, Raman spectra, transmission spectra, etc., but have rarely been reported in photoluminescence (PL) spectroscopy. In this work, we performed spectroscopic studies on layered chromium thiophosphate (CrPS4), a promising ternary antiferromagnetic semiconductor with PL in near-infrared wavelength region and observed Fano resonance when CrPS4 experiences phase transition into the antiferromagnetic state below Néel temperature (38 K). The photoluminescence of the continuum states results from the d band transitions localized at Cr3+ ions, while the discrete state reaches saturation at high excitation power and can be enhanced by the external magnetic field, suggesting it is formed by an impurity level from extra atomic phosphorus. Our findings provide insights into the electronic transitions of CrPS4 and their connection to its intrinsic magnetic properties.
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Submitted 11 October, 2019;
originally announced October 2019.
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Robust edge photocurrent response on layered Type II Weyl semimetal WTe2
Authors:
Qinsheng Wang,
**gchuan Zheng,
Yuan He,
** Cao,
Xin Liu,
Maoyuan Wang,
Junchao Ma,
Jiawei Lai,
Hong Lu,
Shuang Jia,
Dayu Yan,
Y. -G. Shi,
Junxi Duan,
Junfeng Han,
Wende Xiao,
Jian-Hao Chen,
Kai Sun,
Yugui Yao,
Dong Sun
Abstract:
Photo sensing and energy harvesting based on exotic properties of quantum materials and new operation principles have great potentials to break the fundamental performance limit of conventional photodetectors and solar cells. As topological nontrivial materials, Weyl semimetals have demonstrated novel optoelectronic properties that promise potential applications in photo detection and energy harve…
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Photo sensing and energy harvesting based on exotic properties of quantum materials and new operation principles have great potentials to break the fundamental performance limit of conventional photodetectors and solar cells. As topological nontrivial materials, Weyl semimetals have demonstrated novel optoelectronic properties that promise potential applications in photo detection and energy harvesting arising from their gapless linear dispersion near Weyl nodes and Berry field enhanced nonlinear optical effect at the vicinity of Weyl nodes. In this work, we demonstrate robust photocurrent generation from charge separation of photoexctied electron-hole pairs at the edge of Td-WTe2, a type-II Weyl semimetal, due to crystalline-symmetry breaking along certain crystal fracture directions and possibly enhanced by robust fermi-arc type surface states. Using scanning photocurrent microscopy (SPCM) measurements, we further demonstrate that the edge current response is robust over a wide excitation photon energy. We find that this robust feature is highly generic, and shall arise universally in a wide class of quantum materials with similar crystal symmetries. In addition, possible connections between these edge photocurrents and topological properties of Weyl semimetals are explored. The robust and generic edge current response demonstrated in this work provides a new type of charge separation mechanism for photosensing and energy harvesting over broad wavelength range.
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Submitted 10 October, 2019;
originally announced October 2019.
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Robust Ultraviolet to Near-infrared Quantum Emitters in Hexagonal Boron Nitride up to 1100 K
Authors:
Qing-Hai Tan,
Jia-Min Lai,
Xue-Lu Liu,
Yong-Zhou Xue,
Xiu-Ming Dou,
Bao-Quan Sun,
Wei-Bo Gao,
**-Heng Tan,
Jun Zhang
Abstract:
A stable single-photon source working at high temperatures with high brightness and covering full band emission from one host material is critically important for quantum technologies. Here, we find that the certain hBN single-photon emissions (SPEs) can be significantly enhanced by lasers with special wavelengths, which largely broaden the wavelength range of the hBN emitters, down to ultraviolet…
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A stable single-photon source working at high temperatures with high brightness and covering full band emission from one host material is critically important for quantum technologies. Here, we find that the certain hBN single-photon emissions (SPEs) can be significantly enhanced by lasers with special wavelengths, which largely broaden the wavelength range of the hBN emitters, down to ultraviolet (357 nm) and up to near-infrared (912 nm). Importantly, these hBN SPEs are still stable even at the temperature up to 1100 Kelvin. The decoupling between single-photon and acoustic phonon is observed at high temperatures. Our work suggests that hBN can be a good host material for generating single-photon sources with ultrabroad wavelength range.
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Submitted 31 October, 2021; v1 submitted 18 August, 2019;
originally announced August 2019.
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Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures
Authors:
Anyuan Gao,
Jiawei Lai,
Yaojia Wang,
Zhen Zhu,
Shuchao Qin,
Junwen Zeng,
Geliang Yu,
Naizhou Wang,
Wenchao Chen,
Tianjun Cao,
Weida Hu,
Dong Sun,
Xianhui Chen,
Feng Miao,
Yi Shi,
Xiaomu Wang
Abstract:
Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engin…
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Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engineered to avalanche photodetectors (APD) and impact ionization transistors, demonstrating ultra-sensitive mid-IR light detection (4 μm wavelength) and ultra-steep subthreshold swing, respectively. These devices show an extremely low avalanche threshold (<1 volt), excellent low noise figures and distinctive density spectral shape. Further transport measurement evidences the breakdown originals from a ballistic avalanche phenomenon, where the sub-MFP BP channel enables both electrons and holes to impact-ionize the lattice and abruptly amplify the current without scattering from the obstacles in a deterministic nature. Our results shed light on the development of advanced photodetectors and efficiently facilitating carriers on the nanoscale.
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Submitted 29 January, 2019;
originally announced January 2019.
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Ultra-low Hysteresis in Giant Magnetocaloric Mn1-xVxFe(P,Si,B) Compounds
Authors:
Jiawei Lai,
Bowei Huang,
Dimitrios Bessas,
Xinmin You,
Michael Maschek,
Dechang Zeng,
L. Zhang,
Niels van Dijk,
Ekkes Bruck
Abstract:
Large thermal hysteresis in the MnFe(P, Si, B) system hinders the heat exchange rate and thus limits the magnetocaloric applications at high frequencies. Substitution of Mn by V in Mn1-xVxFe0.95P0.593Si0.33B0.077 and Mn1-xVxFe0.95P0.563Si0.36B0.077 alloys was found to reduce the thermal hysteresis due to a decrease in the latent heat. Introducing V increases both the field-induced transition tempe…
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Large thermal hysteresis in the MnFe(P, Si, B) system hinders the heat exchange rate and thus limits the magnetocaloric applications at high frequencies. Substitution of Mn by V in Mn1-xVxFe0.95P0.593Si0.33B0.077 and Mn1-xVxFe0.95P0.563Si0.36B0.077 alloys was found to reduce the thermal hysteresis due to a decrease in the latent heat. Introducing V increases both the field-induced transition temperature shift and the magnetic moment per formula unit. Thus, a decease in the thermal hysteresis is obtained without losing the giant magnetocaloric effect. In consequence, an ultralow hysteresis (0.7 K) and a giant adiabatic temperature change of 2.3 K were achieved, which makes these alloys promising candidates for commercial magnetic refrigerator using permanent magnets.
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Submitted 23 October, 2018;
originally announced October 2018.
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Berry Curvature Enhanced Nonlinear Photogalvanic Response of Type-II Weyl Cone
Authors:
Junchao Ma,
Qiangqiang Gu,
Yinan Liu,
Jiawei Lai,
Yu Peng,
Xiao Zhuo,
Zheng Liu,
Jian-Hao Chen,
Ji Feng,
Dong Sun
Abstract:
The experimental manifestation of topological effects in bulk materials under ambient conditions, especially those with practical applications, has attracted enormous research interest. Recent discovery of Weyl semimetal provides an ideal material platform for such endeavors. The Berry curvature in a Weyl semimetal becomes singular at the Weyl node, creating an effective magnetic monopole in the k…
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The experimental manifestation of topological effects in bulk materials under ambient conditions, especially those with practical applications, has attracted enormous research interest. Recent discovery of Weyl semimetal provides an ideal material platform for such endeavors. The Berry curvature in a Weyl semimetal becomes singular at the Weyl node, creating an effective magnetic monopole in the k-space. A pair of Weyl nodes carry quantized effective magnetic charges with opposite signs, and therefore, opposite chirality. Although Weyl-point-related signatures such as chiral anomaly and non-closing surface Fermi arcs have been detected through transport and ARPES measurements, direct experimental evidence of the effective k-space monopole of the Weyl nodes has so far been lacking. In this work, signatures of the singular topology in a type-II Weyl semimetal TaIrTe4 is revealed in the photo responses, which are shown to be directly related to the divergence of Berry curvature. As a result of the divergence of Berry curvature at the Weyl nodes, TaIrTe4 exhibits unusually large photo responsivity of 130.2 mA/W with 4-μm excitation in an unbiased field effect transistor at room temperature arising from the third-order nonlinear optical response. The room temperature mid-IR responsivity is approaching the performance of commercial HgCdTe detector operating at low temperature, making Type-II Weyl semimetal TaIrTe4 of practical importance in terms of photo sensing and solar energy harvesting. Furthermore, the high shift photocurrent response at the Weyl cones is found to enhance the circularly polarized galvanic response from Weyl cones with opposite chirality, which opens new experimental possibilities for studying and controlling the chiral polarization of Weyl Fermions through an in-plane DC electric field in addition to the optical helicities.
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Submitted 12 December, 2018; v1 submitted 22 June, 2018;
originally announced June 2018.
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Liquid phase mass production of air-stable black phosphorus/phospholipids nanocomposite with ultralow tunneling barrier
Authors:
Qiankun Zhang,
Yinan Liu,
Jiawei Lai,
Shaomian Qi,
Chunhua An,
Yao Lu,
Xuexin Duan,
Wei Pang,
Daihua Zhang,
Dong Sun,
Jian-Hao Chen,
**g Liu
Abstract:
Few-layer black phosphorus (FLBP), a recently discovered two-dimensional semiconductor, has attracted substantial attention in the scientific and technical communities due to its great potential in electronic and optoelectronic applications. However, reactivity of FLBP flakes with ambient species limits its direct applications. Among various methods to passivate FLBP in ambient environment, nanoco…
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Few-layer black phosphorus (FLBP), a recently discovered two-dimensional semiconductor, has attracted substantial attention in the scientific and technical communities due to its great potential in electronic and optoelectronic applications. However, reactivity of FLBP flakes with ambient species limits its direct applications. Among various methods to passivate FLBP in ambient environment, nanocomposites mixing FLBP flakes with stable matrix may be one of the most promising approaches for industry applications. Here, we report a simple one-step procedure to mass produce air-stable FLBP/phospholipids nanocomposite in liquid phase. The resultant nanocomposite is found to have ultralow tunneling barrier for charge carriers which can be described by an Efros-Shklovskii variable range hop** mechanism. Devices made from such mass-produced FLBP/phospholipids nanocomposite show highly stable electrical conductivity and opto-electrical response in ambient conditions, indicating its promising applications in both electronic and optoelectronic applications. This method could also be generalized to the mass production of nanocomposites consisting of other air-sensitive two-dimensional materials, such as FeSe, NbSe2, WTe2, etc.
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Submitted 22 January, 2018;
originally announced January 2018.
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Dynamical Anisotropic Response of Black Phosphorus under Magnetic Field
Authors:
Xuefeng Liu,
Wei Lu,
Xiaoying Zhou,
Yang Zhou,
Chenglong Zhang,
Jiawei Lai,
Shaofeng Ge,
Chandra Sekhar Mutyala,
Shuang Jia,
Kai Chang,
Dong Sun
Abstract:
Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved ultrafast mid-infrared transient reflection spectroscopy measurements are performed to study the dynamical anisotropic optical properties of BP under magnetic f…
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Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved ultrafast mid-infrared transient reflection spectroscopy measurements are performed to study the dynamical anisotropic optical properties of BP under magnetic fields up to 9 T. The relaxation dynamics of photoexcited carrier is found to be insensitive to the applied magnetic field due to the broadening of the Landau levels and large effective mass of carriers. While the anisotropic optical response of BP decreases with increasing magnetic field, its enhancement due to the excitation of hot carriers is similar to that without magnetic field. These experimental results can be well interpreted by the magneto-optical conductivity of the Landau levels of BP thin film, based on an effective k*p Hamiltonian and linear response theory. These findings suggest attractive possibilities of multi-dimensional controls of anisotropic response (AR) of BP with light, electric and magnetic field, which further introduces BP to the fantastic magnetic field sensitive applications.
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Submitted 10 September, 2017;
originally announced September 2017.
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Review of Ultrafast Spectroscopy Studies of Valley Carrier Dynamics in Two Dimensional Semiconducting Transition Metal Dichalcogenides
Authors:
Dong Sun,
Jiawei Lai,
Junchao Ma,
Qinsheng Wang,
**g Liu
Abstract:
The two dimensional layered transition metal dichalcogenides provide new opportunities in future valley based information processing and also provide ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many particle electronic states, especially excito…
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The two dimensional layered transition metal dichalcogenides provide new opportunities in future valley based information processing and also provide ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel context of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity resolved ultrafast spectroscopy, especially ultrafast pump-probe spectroscopy, to study the dynamical evolution of valley related many particle electronic states in semiconducting monolayer transitional metal dichalcogenides.
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Submitted 21 December, 2016; v1 submitted 21 December, 2016;
originally announced December 2016.
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Ultrafast Broadband Photodetectors based on Three-dimensional Dirac Semimetal Cd3As2
Authors:
Qinsheng Wang,
Cai-Zhen Li,
Shaofeng Ge,
**-Guang Li,
Wei Lu,
Jiawei Lai,
Xuefeng Liu,
Junchao Ma,
Da-Peng Yu,
Zhi-Min Liao,
Dong Sun
Abstract:
The efforts to pursue photo detection with extreme performance in terms of ultrafast response time, broad detection wavelength range, and high sensitivity have never been exhausted as driven by its wide range of optoelectronic and photonic applications such as optical communications, interconnects, imaging and remote sensing1. 2D Dirac semimetal graphene has shown excellent potential toward high p…
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The efforts to pursue photo detection with extreme performance in terms of ultrafast response time, broad detection wavelength range, and high sensitivity have never been exhausted as driven by its wide range of optoelectronic and photonic applications such as optical communications, interconnects, imaging and remote sensing1. 2D Dirac semimetal graphene has shown excellent potential toward high performance photodetector with high operation speed, broadband response and efficient carrier multiplications benefiting from its linear dispersion band structure with high carrier mobility and zero bandgap2-4. As the three dimensional analogues of graphene, Dirac semimetal Cd3As2 processes all advantages of graphene as a photosensitive material but potentially has stronger interaction with light as bulk material and thus enhanced responsivity5,6, which promises great potential in improving the performance of photodetector in various aspects . In this work, we report the realization of an ultrafast broadband photodetector based on Cd3As2. The prototype metal-Cd3As2-metal photodetector exhibits a responsivity of 5.9 mA/W with response time of about 6.9 ps without any special device optimization. Broadband responses from 0.8 eV to 2.34 eV are measured with potential detection range extendable to far infrared and terahertz. Systematical studies indicate that the photo-thermoelectric effect plays important roles in photocurrent generation, similar to that in graphene. Our results suggest this emerging class of exotic quantum materials can be harnessed for photo detection with high sensitivity and high speed (~145 GHz) in challenging middle/far-infrared and THz range.
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Submitted 2 September, 2016;
originally announced September 2016.
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Ultrafast Relaxation Dynamics of Photoexcited Dirac Fermion in The Three Dimensional Dirac Semimetal Cadmium Arsenide
Authors:
Wei Lu,
Shaofeng Ge,
Xuefeng Liu,
Hong Lu,
Caizhen Li,
Jiawei Lai,
Chuan Zhao,
Zhimin Liao,
Shuang Jia,
Dong Sun
Abstract:
Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobility materials in future electronic/optoelectronic devices, it is crucial to understand the relaxation dynamics of photoexcited carriers and their coupling with lattice. In this work, we report ultrafast transient reflec…
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Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobility materials in future electronic/optoelectronic devices, it is crucial to understand the relaxation dynamics of photoexcited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of the photoexcited carrier dynamics in cadmium arsenide (Cd3As2), which is one of the most stable Dirac semimetals that have been confirmed experimentally. By using low energy probe photon of 0.3 eV, we probed the dynamics of the photoexcited carriers that are Dirac-Fermi-like approaching the Dirac point. We systematically studied the transient reflection on bulk and nanoplate samples that have different do** intensities by tuning the probe wavelength, pump power and lattice temperature, and find that the dynamical evolution of carrier distributions can be retrieved qualitatively by using a two-temperature model. This result is very similar to that of graphene, but the carrier cooling through the optical phonon couplings is slower and lasts over larger electron temperature range because the optical phonon energies in Cd3As2 are much lower than those in graphene.
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Submitted 18 January, 2017; v1 submitted 26 August, 2016;
originally announced August 2016.
