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Silicon-vacancy color centers in phosphorus-doped diamond
Authors:
Assegid Mengistu Flatae,
Stefano Lagomarsino,
Florian Sledz,
Navid Soltani,
Shannon S. Nicley,
Ken Haenen,
Robert Rechenberg,
Michael F. Becker,
Silvio Sciortino,
Nicla Gelli,
Lorenzo Giuntini,
Francesco Taccetti,
Mario Agio
Abstract:
The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this stu…
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The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to do**, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at the low Si-ion implantation fluences.
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Submitted 19 December, 2019;
originally announced December 2019.
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Finite element analysis of ion-implanted diamond surface swelling
Authors:
F. Bosia,
P. Olivero,
E. Vittone,
F. Picollo,
A. Lo Giudice,
M. Jaksic,
N. Skukan,
L. Giuntini,
M. Massi,
S. Calusi,
M. Vannoni,
S. Lagomarsino,
S. Sciortino
Abstract:
We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interf…
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We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interferometric profilometry in both cases. Simulations are based on a model which accounts for the through-the-thickness variation of mechanical parameters in the material, as a function of ion type, fluence and energy. Surface deformation profiles and internal stress distributions are analyzed and numerical results are seen to adequately fit experimental data. Results allow us to draw conclusions on structural damage mechanisms in diamond for different MeV ion implantations.
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Submitted 29 August, 2016;
originally announced August 2016.
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Controlled variation of the refractive index in ion-damaged diamond
Authors:
P. Olivero,
S. Calusi,
L. Giuntini,
S. Lagomarsino,
A. Lo Giudice,
M. Massi,
S. Sciortino,
M. Vannoni,
E. Vittone
Abstract:
A fine control of the variation of the refractive index as a function of structural damage is essential in the fabrication of diamond-based optical and photonic devices. We report here about the variation of the real part of the refractive index at lambda=632.8 nm in high quality single crystal diamond damaged with 2 and 3 MeV protons at low-medium fluences (10^13 - 10^17 ions cm^-2). After implan…
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A fine control of the variation of the refractive index as a function of structural damage is essential in the fabrication of diamond-based optical and photonic devices. We report here about the variation of the real part of the refractive index at lambda=632.8 nm in high quality single crystal diamond damaged with 2 and 3 MeV protons at low-medium fluences (10^13 - 10^17 ions cm^-2). After implanting the samples in 125x125 um^2 areas with a raster scanning ion microbeam, the variation of optical thickness of the implanted regions was measured with laser interferometric microscopy. The results were analyzed with a model based on the specific damage profile. The technique allows the direct fabrication of optical structures in bulk diamond based on the localized variation of the refractive index, which will be explored in future works.
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Submitted 26 August, 2016;
originally announced August 2016.
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Complex refractive index variation in proton-damaged diamond
Authors:
S. Lagomarsino,
P. Olivero,
S. Calusi,
D. Gatto Monticone,
L. Giuntini,
M. Massi,
S. Sciortino,
A. Sytchkova,
A. Sordini,
M. Vannoni
Abstract:
An accurate control of the optical properties of single crystal diamond during microfabrication processes such as ion implantation plays a crucial role in the engineering of integrated photonic devices. In this work we present a systematic study of the variation of both real and imaginary parts of the refractive index of single crystal diamond, when damaged with 2 and 3 MeV protons at low-medium f…
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An accurate control of the optical properties of single crystal diamond during microfabrication processes such as ion implantation plays a crucial role in the engineering of integrated photonic devices. In this work we present a systematic study of the variation of both real and imaginary parts of the refractive index of single crystal diamond, when damaged with 2 and 3 MeV protons at low-medium fluences (range: 10^15 - 10^17 cm^-2). After implanting in 125x125 um^2 areas with a scanning ion microbeam, the variation of optical pathlength of the implanted regions was measured with laser interferometric microscopy, while their optical transmission was studied using a spectrometric set-up with micrometric spatial resolution. On the basis of a model taking into account the strongly non-uniform damage profile in the bulk sample, the variation of the complex refractive index as a function of damage density was evaluated.
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Submitted 25 August, 2016;
originally announced August 2016.
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Micro-beam and pulsed laser beam techniques for the micro-fabrication of diamond surface and bulk structures
Authors:
S. Sciortino,
M. Bellini,
F. Bosia,
S. Calusi,
C. Corsi,
C. Czelusniak,
N. Gelli,
L. Giuntini,
F. Gorelli,
S. Lagomarsino,
P. A. Mando,
M. Massi,
P. Olivero,
G. Parrini,
M. Santoro,
A. Sordini,
A. Sytchkova,
F. Taccetti,
M. Vannoni
Abstract:
Micro-fabrication in diamond is involved in a wide set of emerging technologies, exploiting the exceptional characteristics of diamond for application in bio-physics, photonics, radiation detection. Micro ion-beam irradiation and pulsed laser irradiation are complementary techniques, which permit the implementation of complex geometries, by modification and functionalization of surface and/or bulk…
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Micro-fabrication in diamond is involved in a wide set of emerging technologies, exploiting the exceptional characteristics of diamond for application in bio-physics, photonics, radiation detection. Micro ion-beam irradiation and pulsed laser irradiation are complementary techniques, which permit the implementation of complex geometries, by modification and functionalization of surface and/or bulk material, modifying the optical, electrical and mechanical characteristics of the material. In this article we summarize the work done in Florence (Italy) concerning ion beam and pulsed laser beam micro-fabrication in diamond.
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Submitted 25 August, 2016;
originally announced August 2016.
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Robust luminescence of the silicon-vacancy center in diamond at high temperatures
Authors:
Stefano Lagomarsino,
Federico Gorelli,
Mario Santoro,
Nicole Fabbri,
Ahmed Hajeb,
Silvio Sciortino,
Lara Palla,
Caroline Czelusniak,
Mirko Massi,
Francesco Taccetti,
Lorenzo Giuntini,
Nicla Gelli,
Dmitry Yu Fedyanin,
Francesco Saverio Cataliotti,
Costanza Toninelli,
Mario Agio
Abstract:
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room t…
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We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room temperature at 500 K and 700 K, respectively. In addition, the color center is found highly photostable at temperatures exceeding 800 K. The luminescence of this color center is thus extremely robust even at large temperatures and it holds promise for novel diamond-based light-emitting devices.
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Submitted 22 October, 2015;
originally announced October 2015.
