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Efficient Electron Spin Relaxation by Chiral Phonons in WSe$_2$ Monolayers
Authors:
D. Lagarde,
M. Glazov,
V. **dal,
K. Mourzidis,
Iann Gerber,
A. Balocchi,
L. Lombez,
P. Renucci,
T. Taniguchi,
K. Watanabe,
C. Robert,
X. Marie
Abstract:
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is…
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In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is known about the intra-valley spin relaxation processes. In this work we have performed stationary and time-resolved photoluminescence measurements in high quality WSe$_2$ monolayers. Our experiments highlight an efficient relaxation from bright to dark excitons, due to a fast intra-valley electron transfer from the top to the bottom conduction band with opposite spins. A combination of experiments and theoretical analysis allows us to infer a spin relaxation time of about $τ_s\sim10~$ps, driven by the interplay between $Γ$-valley chiral phonons and spin-orbit mixing.
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Submitted 9 July, 2024;
originally announced July 2024.
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Brightened emission of dark trions in transition-metal dichalcogenide monolayers
Authors:
V. **dal,
K. Mourzidis,
A. Balocchi,
C. Robert,
P. Li,
D. Van Tuan,
L. Lombez,
D. Lagarde,
P. Renucci,
T. Taniguchi,
K. Watanabe,
H. Dery,
X. Marie
Abstract:
The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions.…
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The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions. Despite previous investigations, its origin remains elusive. Here, we demonstrate that this luminescence peak is the result of electron-electron assisted recombination that brightens the dark trion emission. Supporting evidence for this second-order recombination process comes from identifying the equivalent brightened emission of positively charged dark trions when the monolayer is electrostatically doped with holes. Remarkably, the discovered hole-hole assisted luminescence peak emerges in the near infrared, about 500 meV below the well-studied spectral region of excitons and trions. In addition to identifying new recombination channels of these excitonic complexes, our findings accurately determine the spin-split energies of the conduction and valence bands. Both of which play crucial roles in understanding the optical properties of WSe2 based homo- and hetero-structures.
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Submitted 4 June, 2024;
originally announced June 2024.
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Performance of graphene Hall effect sensors: role of bias current, disorder and Fermi velocity
Authors:
Lionel Petit,
Tom Fournier,
Géraldine Ballon,
Cédric Robert,
Delphine Lagarde,
Pascal Puech,
Thomas Blon,
Benjamin Lassagne
Abstract:
Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. He…
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Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. Here we present an advanced model that provides an in-depth understanding of how graphene Hall sensors operate, and demonstrate its ability to quantitatively assess their performance. First, we report the fabrication of sensors with different qualities of graphene, with the best devices achieving magnetic field sensitivities as high as 5000 ohms/T, outperforming the best silicon and narrow-gap semiconductor-based sensors. Then, we examine their performance in detail using the proposed numerical model, which combines Boltzmann formalism, with distinct Fermi levels for electrons and holes, and a new method for the introduction of substrate-induced electron-hole puddles. Importantly, the dependences of magnetic field sensitivity on bias current, disorder, substrate and Hall bar geometry are quantitatively reproduced for the first time. In addition, the model emphasizes that the performance of devices with widths of the order of the charge carrier diffusion length, is significantly affected by the bias current due to the occurrence of large and non-symmetric carrier accumulation and depletion areas near the edges of the Hall bar. The formation of these areas induces a transverse diffusion particle flux capable of counterbalancing the particle flux induced by the Lorentz force when the Hall electric field cancels out in the ambipolar regime. Finally, we discuss how sensor performance can be enhanced by Fermi velocity engineering, paving the way for future ultra-sensitive graphene Hall effect sensors.
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Submitted 17 March, 2024;
originally announced March 2024.
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Large-scale characterization of Cu2O monocrystals via Rydberg excitons
Authors:
Kerwan Morin,
Delphine Lagarde,
Angélique Gillet,
Xavier Marie,
Thomas Boulier
Abstract:
Rydberg states of excitons can reach microns in size and require extremely pure crystals. We introduce an experimental method for the rapid and spatially-resolved characterization of Rydberg excitons in copper oxide (Cu2O) with sub-micron resolution over large zones. Our approach involves illuminating and imaging the entire sample on a camera to realize a spatially-resolved version of resonant abs…
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Rydberg states of excitons can reach microns in size and require extremely pure crystals. We introduce an experimental method for the rapid and spatially-resolved characterization of Rydberg excitons in copper oxide (Cu2O) with sub-micron resolution over large zones. Our approach involves illuminating and imaging the entire sample on a camera to realize a spatially-resolved version of resonant absorption spectroscopy, without any mobile part. This yields spatial maps of Rydberg exciton properties, including their energy, linewidth and peak absorption, providing a comprehensive quality assessment of the entire sample in a single shot. Furthermore, by imaging the sample photoluminescence over the same zone, we establish a strong relationship between the spectral quality map and the photoluminescence map of charged oxygen vacancies. This results in an independent, luminescence-based quality map that closely matches the results obtained through resonant spectroscopy. Our findings reveal that Rydberg excitons in natural Cu2O crystals are predominantly influenced by optically-active charged oxygen vacancies, which can be easily mapped. Together, these two complementary methods provide valuable insights into Cu2O crystal properties.
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Submitted 5 February, 2024;
originally announced February 2024.
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Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction
Authors:
Hassan Lamsaadi,
Dorian Beret,
Ioannis Paradisanos,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Andrey Turchanin,
Laurent Lombez,
Nicolas Combe,
Vincent Paillard,
Jean-Marie Poumirol
Abstract:
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challe…
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Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
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Submitted 23 June, 2023;
originally announced June 2023.
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Control of the Bright-Dark Exciton Splitting using Lamb Shift in a 2D Semiconductor
Authors:
L. Ren,
C. Robert,
M. M. Glazov,
M. A. Semina,
T. Amand,
L. Lombez,
D. Lagarde,
T. Taniguchi,
K. Watanabe,
X. Marie
Abstract:
We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant…
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We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant Lamb shift of the optically active exciton which arises from emission and absorption of virtual photons triggered by the vacuum fluctuations of the electromagnetic field. We also measured strong variations of the bright exciton radiative linewidth, as a result of the Purcell effect. All these experimental results illustrate the strong sensitivity of the excitons to local vacuum field. We found a very good agreement with a model that demonstrates the equivalence, for our system, of a classical electrodynamical transfer matrix formalism and quantum-electrodynamical approach. The bright-dark splitting control demonstrated here should apply to any semiconductor structures.
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Submitted 31 March, 2023;
originally announced March 2023.
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Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
Authors:
Ana Estrada-Real,
Ioannis Paradisanos,
Peter R. Wiecha,
Jean-Marie Poumirol,
Aurelien Cuche,
Gonzague Agez,
Delphine Lagarde,
Xavier Marie,
Vincent Larrey,
Jonas Müller,
Guilhem Larrieu,
Vincent Paillard,
Bernhard Urbaszek
Abstract:
Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling betw…
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Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment.
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Submitted 25 October, 2022;
originally announced October 2022.
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Non-linear diffusion of negatively charged excitons in WSe2 monolayer
Authors:
D. Beret,
L. Ren,
C. Robert,
L. Foussat,
P. Renucci,
D. Lagarde,
A. Balocchi,
T. Amand,
B. Urbaszek,
K. Watanabe,
T. Taniguchi,
X. Marie,
L. Lombez
Abstract:
We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (interv…
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We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (intervalley and intravalley trion) as well as the dark trion. The time evolution allows us to identify the interplay of different excitonic species: the trionic species appear after the neutral excitonic ones, consistent with a bimolecular formation mechanism. Using the experimental observations, we propose a phenomenological model suggesting the coexistence of two populations: a first one exhibiting a fast and efficient diffusion mechanism and a second one with a slower dynamics and a less efficient diffusion process. These two contributions could be attributed to hot and cold trion populations.
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Submitted 1 August, 2022;
originally announced August 2022.
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Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
Authors:
Dorian Beret,
Ioannis Paradisanos,
Ziyang Gan,
Emad Naja dehaghani,
Antony George,
Tibor Lehnert,
Johannes Biskupek,
Shivangi Shree,
Ana Estrada-Real,
Delphine Lagarde,
Jean-Marie Poumirol,
Vincent Paillard,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Ute Kaiser,
Pierre Renucci,
Laurent Lombez,
Andrey Turchanin,
Bernhard Urbaszek
Abstract:
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostruc…
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Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed.
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Submitted 15 April, 2022;
originally announced April 2022.
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Optical detection of long electron spin transport lengths in a monolayer semiconductor
Authors:
Lei Ren,
Laurent Lombez,
Cedric Robert,
Dorian Beret,
Delphine Lagarde,
Bernhard Urbaszek,
Pierre Renucci,
Takashi Taniguchi,
Kenji Watanabe,
Scott A. Crooker,
Xavier Marie
Abstract:
Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pum** the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be m…
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Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pum** the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially-separated and linearly-polarized probe laser. Up to 25% spin-valley polarization is observed at pump-probe separations up to 20 microns. Characteristic spin/valley diffusion lengths of 18 +/- 3 um are revealed at low temperatures. The dependence on temperature, pump helicity, pump intensity, and electron density highlight the key roles played by spin relaxation time and pum** efficiency on polarized electron transport in monolayer semiconductors possessing spin-valley locking.
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Submitted 2 February, 2022;
originally announced February 2022.
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Capacitively-coupled and inductively-coupled excitons in bilayer MoS$_2$
Authors:
Lukas Sponfeldner,
Nadine Leisgang,
Shivangi Shree,
Ioannis Paradisanos,
Kenji Watanabe,
Takashi Taniguchi,
Cedric Robert,
Delphine Lagarde,
Andrea Balocchi,
Xavier Marie,
Iann C. Gerber,
Bernhard Urbaszek,
Richard J. Warburton
Abstract:
The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to…
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The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to the other. Conversely, the interlayer exciton interacts inductively with the intralayer A-exciton (negative coupling constant). First-principles many-body calculations show that this coupling arises via an intravalley exchange-interaction of A- and B-excitons.
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Submitted 9 August, 2021;
originally announced August 2021.
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Interlayer exciton mediated second harmonic generation in bilayer MoS2
Authors:
Shivangi Shree,
Delphine Lagarde,
Laurent Lombez,
Cedric Robert,
Andrea Balocchi,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Iann C. Gerber,
Mikhail M. Glazov,
Leonid E. Golub,
Bernhard Urbaszek,
Ioannis Paradisanos
Abstract:
Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of…
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Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also inter-layer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations.
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Submitted 2 April, 2021;
originally announced April 2021.
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Measurement of Conduction and Valence Bands g-factors in a Transition Metal Dichalcogenide Monolayer
Authors:
Cedric Robert,
Hanan Dery,
Lei Ren,
Dinh van Tuan,
Emmanuel Courtade,
Min Yang,
Bernhard Urbaszek,
Delphine Lagarde,
Kenji Watanabe,
Takashi Taniguchi,
Thierry Amand,
Xavier Marie
Abstract:
The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to th…
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The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to the respective contribution of the conduction and valence band to the measured Zeeman splitting. It exploits the optical selection rules of exciton complexes, in particular the ones involving inter-valley phonons, avoiding strong renormalization effects that compromise single particle g-factor determination in transport experiments. These studies yield a direct determination of single band g factors. We measure gc1= 0.86, gc2=3.84 for the bottom (top) conduction bands and gv=6.1 for the valence band of monolayer WSe2. These measurements are helpful for quantitative interpretation of optical and transport measurements performed in magnetic fields. In addition the measured g-factors are valuable input parameters for optimizing band structure calculations of these 2D materials.
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Submitted 17 August, 2020;
originally announced August 2020.
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Giant Stark splitting of an exciton in bilayer MoS$_2$
Authors:
Nadine Leisgang,
Shivangi Shree,
Ioannis Paradisanos,
Lukas Sponfeldner,
Cedric Robert,
Delphine Lagarde,
Andrea Balocchi,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Richard J. Warburton,
Iann C. Gerber,
Bernhard Urbaszek
Abstract:
Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applie…
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Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is considerably reduced. Here, we show tuning over 120 meV of interlayer excitons with high oscillator strength in bilayer MoS2. These shifts are due to the quantum confined Stark effect, here the electron is localised to one of the layers yet the hole is delocalised across the bilayer. We optically probe the interaction between intra- and interlayer excitons as they are energetically tuned into resonance. This allows studying their mixing supported by beyond standard density functional theory calculations including excitonic effects. In MoS2 trilayers our experiments uncover two types of interlayer excitons with and without in-built electric dipoles, respectively. Highly tunable excitonic transitions with large oscillator strength and in-built dipoles, that lead to considerable exciton-exciton interactions, hold great promise for non-linear optics with polaritons.
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Submitted 18 June, 2021; v1 submitted 6 February, 2020;
originally announced February 2020.
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Filtering the photoluminescence spectra of atomically thin semiconductors with graphene
Authors:
Etienne Lorchat,
Luis E. Parra López,
Cédric Robert,
Delphine Lagarde,
Guillaume Froehlicher,
Takashi Taniguchi,
Kenji Watanabe,
Xavier Marie,
Stéphane Berciaud
Abstract:
Atomically thin semiconductors made from transition metal dichalcogenides (TMDs) are model systems for investigations of strong light-matter interactions and applications in nanophotonics, opto-electronics and valley-tronics. However, the photoluminescence spectra of TMD monolayers display a large number of features that are particularly challenging to decipher. On a practical level, monochromatic…
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Atomically thin semiconductors made from transition metal dichalcogenides (TMDs) are model systems for investigations of strong light-matter interactions and applications in nanophotonics, opto-electronics and valley-tronics. However, the photoluminescence spectra of TMD monolayers display a large number of features that are particularly challenging to decipher. On a practical level, monochromatic TMD-based emitters would be beneficial for low-dimensional devices but this challenge is yet to be resolved. Here, we show that graphene, directly stacked onto TMD monolayers enables single and narrow-line photoluminescence arising solely from TMD neutral excitons. This filtering effect stems from complete neutralization of the TMD by graphene combined with selective non-radiative transfer of long-lived excitonic species to graphene. Our approach is applied to four tungsten and molybdenum-based TMDs and establishes TMD/graphene heterostructures as a unique set of opto-electronic building blocks, suitable for electroluminescent systems emitting visible and near-infrared photons at near THz rate with linewidths approaching the lifetime limit.
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Submitted 5 November, 2020; v1 submitted 28 August, 2019;
originally announced August 2019.
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Control of the Exciton Radiative Lifetime in van der Waals Heterostructures
Authors:
H. H. Fang,
B. Han,
C. Robert,
M. A. Semina,
D. Lagarde,
E. Courtade,
T. Taniguchi,
K. Watanabe,
T. Amand,
B. Urbaszek,
M. M. Glazov,
X. Marie
Abstract:
Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures…
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Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures can be tailored by a simple change of the hBN encapsulation layer thickness as a consequence of the Purcell effect. The time-resolved photoluminescence measurements together with cw reflectivity and photoluminescence experiments show that the neutral exciton spontaneous emission time can be tuned by one order of magnitude depending on the thickness of the surrounding hBN layers. The inhibition of the radiative recombination can yield spontaneous emission time up to $10$~ps. These results are in very good agreement with the calculated recombination rate in the weak exciton-photon coupling regime. The analysis shows that we are also able to observe a sizeable enhancement of the exciton radiative decay rate. Understanding the role of these electrodynamical effects allow us to elucidate the complex dynamics of relaxation and recombination for both neutral and charged excitons.
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Submitted 15 July, 2019; v1 submitted 2 February, 2019;
originally announced February 2019.
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Interlayer excitons in bilayer MoS2 with strong oscillator strength up to room temperature
Authors:
Iann C. Gerber,
Emmanuel Courtade,
Shivangi Shree,
Cedric Robert,
Takashi Taniguchi,
Kenji Watanabe,
Andrea Balocchi,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek
Abstract:
Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculat…
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Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculated and measured spectra we find a strong interlayer exciton transition in energy between A and B intralayer excitons, observable for T$=4 -300$ K, whereas no such transition is observed for the monolayer in the same structure in this energy range. The interlayer excitons consist of an electron localized in one layer and a hole state delocalized over the bilayer, which results in the unusual combination of high oscillator strength and a static dipole moment. We also find signatures of interlayer excitons involving the second highest valence band (B) and compare absorption calculations for different bilayer stackings. For homotrilayer MoS$_2$ we also observe interlayer excitons and an energy splitting between different intralayer A-excitons originating from the middle and outer layers, respectively.
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Submitted 6 February, 2019; v1 submitted 15 November, 2018;
originally announced November 2018.
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Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
Authors:
F. Cadiz,
A. Djeffal,
D. Lagarde,
A. Balocchi,
B. S. Tao,
B. Xu,
S. H. Liang,
M. Stoffel,
X. Devaux,
H. Jaffres,
J. M. George,
M. Hehn,
S. Mangin,
H. Carrere,
X. Marie,
T. Amand,
X. F. Han,
Z. G. Wang,
B. Urbaszek,
Y. Lu,
P. Renucci
Abstract:
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi…
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The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.
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Submitted 12 March, 2018;
originally announced March 2018.
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Fine Structure and Lifetime of Dark Excitons in Transition Metal Dichalcogenide Monolayers
Authors:
Cedric Robert,
Thierry Amand,
Fabian Cadiz,
Delphine Lagarde,
Emmanuel Courtade,
Marco Manca,
Takashi Taniguchi,
Kenji Watanabe,
Bernhard Urbaszek,
Xavier Marie
Abstract:
The intricate interplay between optically dark and bright excitons governs the light-matter interaction in transition metal dichalcogenide monolayers. We have performed a detailed investigation of the "spin-forbidden" dark excitons in WSe2 monolayers by optical spectroscopy in an out-of-plane magnetic field Bz. In agreement with the theoretical predictions deduced from group theory analysis, magne…
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The intricate interplay between optically dark and bright excitons governs the light-matter interaction in transition metal dichalcogenide monolayers. We have performed a detailed investigation of the "spin-forbidden" dark excitons in WSe2 monolayers by optical spectroscopy in an out-of-plane magnetic field Bz. In agreement with the theoretical predictions deduced from group theory analysis, magneto-photoluminescence experiments reveal a zero field splitting $δ=0.6 \pm 0.1$ meV between two dark exciton states. The low energy state being strictly dipole forbidden (perfectly dark) at Bz=0 while the upper state is partially coupled to light with z polarization ("grey" exciton). The first determination of the dark neutral exciton lifetime $τ_D$ in a transition metal dichalcogenide monolayer is obtained by time-resolved photoluminescence. We measure $τ_D \sim 110 \pm 10$ ps for the grey exciton state, i.e. two orders of magnitude longer than the radiative lifetime of the bright neutral exciton at T=12 K.
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Submitted 9 May, 2018; v1 submitted 17 August, 2017;
originally announced August 2017.
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In-plane Propagation of Light in Transition Metal Dichalcogenide Monolayers: Optical Selection Rules
Authors:
G. Wang,
C. Robert,
M. M. Glazov,
F. Cadiz,
E. Courtade,
T. Amand,
D. Lagarde,
T. Taniguchi,
K. Watanabe,
B. Urbaszek,
X. Marie
Abstract:
The optical selection rules for inter-band transitions in WSe2, WS2 and MoSe2 transition metal dichalcogenide monolayers are investigated by polarization-resolved photoluminescence experiments with a signal collection from the sample edge. These measurements reveal a strong polarization-dependence of the emission lines. We see clear signatures of the emitted light with the electric field oriented…
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The optical selection rules for inter-band transitions in WSe2, WS2 and MoSe2 transition metal dichalcogenide monolayers are investigated by polarization-resolved photoluminescence experiments with a signal collection from the sample edge. These measurements reveal a strong polarization-dependence of the emission lines. We see clear signatures of the emitted light with the electric field oriented perpendicular to the monolayer plane, corresponding to an inter-band optical transition forbidden at normal incidence used in standard optical spectroscopy measurements. The experimental results are in agreement with the optical selection rules deduced from group theory analysis, highlighting the key role played by the different symmetries of the conduction and valence bands split by the spin-orbit interaction. These studies yield a direct determination on the bright-dark exciton splitting, for which we measure 40 $\pm 1$ meV and 55 $\pm 2$ meV for WSe2 and WS2 monolayer, respectively.
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Submitted 18 April, 2017;
originally announced April 2017.
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Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
Authors:
F. Cadiz,
E. Courtade,
C. Robert,
G. Wang,
Y. Shen,
H. Cai,
T. Taniguchi,
K. Watanabe,
H. Carrere,
D. Lagarde,
M. Manca,
T. Amand,
P. Renucci,
S. Tongay,
X. Marie,
B. Urbaszek
Abstract:
The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But so far optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogenous and inhomogeneous contributions. This prevented in-depth studies, in contras…
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The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But so far optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogenous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better-characterized ML materials MoSe2 and WSe2. In this work we show that encapsulation of ML MoS2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T = 4K. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high quality samples. Among the new possibilities offered by the well-defined optical transitions we measure the homogeneous broadening induced by the interaction with phonons in temperature dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.
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Submitted 1 February, 2017;
originally announced February 2017.
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Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density
Authors:
F. Cadiz,
D. Lagarde,
P. Renucci,
D. Paget,
T. Amand,
H. Carrère,
A. C. H. Rowe,
S. Arscott
Abstract:
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (…
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Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (A0X) complex. It is found that the spin lifetime is shorter for electrons that recombine through the e-A0 transition due to spin relaxation generated by the exchange scattering of free electrons with either trapped or free holes, whereas spin flip processes are less likely to occur once the electron forms with a free hole an exciton bound to a neutral acceptor. An increase of exci- tation power induces a cross-over to a regime where the bimolecular band-to-band (b-b) emission becomes more favorable due to screening of the electron-hole Coulomb interaction and ionization of excitonic complexes and free excitons. Then, the formation of excitons is no longer possible, the carrier recombination lifetime increases and the spin lifetime is found to decrease dramatically with concentration due to fast spin relaxation with free photoholes. In this high density regime, both the electrons that recombine through the e-A0 transition and through the b-b transition have the same spin relaxation time.
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Submitted 22 November, 2016;
originally announced November 2016.
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Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
Authors:
Fabian Cadiz,
Cedric Robert,
Gang Wang,
Wilson Kong,
Xi Fan,
Mark Blei,
Delphine Lagarde,
Maxime Gay,
Marco Manca,
Takashi Taniguchi,
Kenji Watanabe,
Thierry Amand,
Xavier Marie,
Pierre Renucci,
Sefaattin Tongay,
Bernhard Urbaszek
Abstract:
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical…
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The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced do** is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.
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Submitted 30 June, 2016;
originally announced June 2016.
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Excitonic properties of semiconducting monolayer and bilayer MoTe2
Authors:
C. Robert,
R. Picard,
D. Lagarde,
G. Wang,
J. P. Echeverry,
F. Cadiz,
P. Renucci,
A. Högele,
T. Amand,
X. Marie,
I. C. Gerber,
B. Urbaszek
Abstract:
MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is in the near infrared region and both monolayers and bilayers may have a direct optical band gap. We first simulate the band structure of both monolayer and bilayer MoTe2 with DFT-GW calculations. We find a direct (indir…
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MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is in the near infrared region and both monolayers and bilayers may have a direct optical band gap. We first simulate the band structure of both monolayer and bilayer MoTe2 with DFT-GW calculations. We find a direct (indirect) electronic band gap for the monolayer (bilayer). By solving the Bethe-Salpeter equation, we calculate similar energies for the direct excitonic states in monolayer and bilayer. We then study the optical properties by means of photoluminescence (PL) excitation, time-resolved PL and power dependent PL spectroscopy. We identify the same energy for the B exciton state in monolayer and bilayer. Following circularly polarized excitation, we do not find any exciton polarization for a large range of excitation energies. At low temperature (T=10 K), we measure similar PL decay times of the order of 4 ps for both monolayer and bilayer excitons with a slightly longer one for the bilayer. Finally, we observe a reduction of the exciton-exciton annihilation contribution to the non-radiative recombination in bilayer.
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Submitted 10 June, 2016;
originally announced June 2016.
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Well separated trion and neutral excitons on superacid treated MoS2 monolayers
Authors:
Fabian Cadiz,
Simon Tricard,
Maxime Gay,
Delphine Lagarde,
Gang Wang,
Cedric Robert,
Pierre Renucci,
Bernhard Urbaszek,
Xavier Marie
Abstract:
Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the photoluminescence (PL) spectra even at low temperature consists typically of broad, overlap** contributions from neutral, charged excitons (trions) and localized states. Here…
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Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the photoluminescence (PL) spectra even at low temperature consists typically of broad, overlap** contributions from neutral, charged excitons (trions) and localized states. Here we show that in superacid treated MoS2 MLs the PL intensity increases by up to 60 times at room temperature. The neutral and charged exciton transitions are spectrally well separated in PL and reflectivity at T=4 K, with linewidth for the neutral exciton of 15 meV, but with similar intensities compared to the ones in as-exfoliated MLs at the same temperature. Time resolved experiments uncover picoseconds recombination dynamics analyzed separately for charged and neutral exciton emission. Using the chiral interband selection rules, we demonstrate optically induced valley polarization for both complexes and valley coherence for only the neutral exciton.
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Submitted 20 April, 2016;
originally announced April 2016.
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Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
Authors:
C. Robert,
D. Lagarde,
F. Cadiz,
G. Wang,
B. Lassagne,
T. Amand,
A. Balocchi,
P. Renucci,
S. Tongay,
B. Urbaszek,
X. Marie
Abstract:
We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenar…
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We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenario: at low temperature (T $\leq$ 50 K), the exciton oscillator strength is so large that the entire light can be emitted before the time required for the establishment of a thermalized exciton distribution. For higher lattice temperatures, the photoluminescence dynamics is characterized by two regimes with very different characteristic times. First the PL intensity drops drastically with a decay time in the range of the picosecond driven by the escape of excitons from the radiative window due to exciton- phonon interactions. Following this first non-thermal regime, a thermalized exciton population is established gradually yielding longer photoluminescence decay times in the nanosecond range. Both the exciton effective radiative recombination and non-radiative recombination channels including exciton-exciton annihilation control the latter. Finally the temperature dependence of the measured exciton and trion dynamics indicates that the two populations are not in thermodynamical equilibrium.
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Submitted 3 March, 2016; v1 submitted 1 March, 2016;
originally announced March 2016.
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Exciton states in monolayer MoSe2: impact on interband transitions
Authors:
G. Wang,
I. C. Gerber,
L. Bouet,
D. Lagarde,
A. Balocchi,
M. Vidal,
E. Palleau,
T. Amand,
X. Marie,
B. Urbaszek
Abstract:
We combine linear and non-linear optical spectroscopy at 4K with ab initio calculations to study the electronic bandstructure of MoSe2 monolayers. In 1-photon photoluminescence excitation (PLE) and reflectivity we measure a separation between the A- and B-exciton emission of 220 meV. In 2-photon PLE we detect for the A- and B-exciton the 2p state 180meV above the respective 1s state. In second har…
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We combine linear and non-linear optical spectroscopy at 4K with ab initio calculations to study the electronic bandstructure of MoSe2 monolayers. In 1-photon photoluminescence excitation (PLE) and reflectivity we measure a separation between the A- and B-exciton emission of 220 meV. In 2-photon PLE we detect for the A- and B-exciton the 2p state 180meV above the respective 1s state. In second harmonic generation (SHG) spectroscopy we record an enhancement by more than 2 orders of magnitude of the SHG signal at resonances of the charged exciton and the 1s and 2p neutral A- and B-exciton. Our post-Density Functional Theory calculations show in the conduction band along the $K-Γ$ direction a local minimum that is energetically and in k-space close to the global minimum at the K-point. This has a potentially strong impact on the polarization and energy of the excitonic states that govern the interband transitions and marks an important difference to MoS2 and WSe2 monolayers.
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Submitted 23 April, 2015;
originally announced April 2015.
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Exciton dynamics in WSe2 bilayers
Authors:
G. Wang,
X. Marie,
L. Bouet,
M. Vidal,
A. Balocchi,
T. Amand,
D. Lagarde,
B. Urbaszek
Abstract:
We investigate exciton dynamics in 2H-WSe2 bilayers in time-resolved photoluminescence (PL) spectroscopy. Fast PL emission times are recorded for both the direct exciton with $τ_{D}$ ~ 3 ps and the indirect optical transition with $τ_{i}$ ~ 25 ps. For temperatures between 4 to 150 K $τ_{i}$ remains constant. Following polarized laser excitation, we observe for the direct exciton transition at the…
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We investigate exciton dynamics in 2H-WSe2 bilayers in time-resolved photoluminescence (PL) spectroscopy. Fast PL emission times are recorded for both the direct exciton with $τ_{D}$ ~ 3 ps and the indirect optical transition with $τ_{i}$ ~ 25 ps. For temperatures between 4 to 150 K $τ_{i}$ remains constant. Following polarized laser excitation, we observe for the direct exciton transition at the K point of the Brillouin zone efficient optical orientation and alignment during the short emission time $τ_{D}$. The evolution of the direct exciton polarization and intensity as a function of excitation laser energy is monitored in PL excitation (PLE) experiments.
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Submitted 30 September, 2014;
originally announced September 2014.
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Non-linear Optical Spectroscopy of Excited Exciton States for Efficient Valley Coherence Generation in WSe2 Monolayers
Authors:
G. Wang,
X. Marie,
I. Gerber,
T. Amand,
D. Lagarde,
L. Bouet,
M. Vidal,
A. Balocchi,
B. Urbaszek
Abstract:
Monolayers (MLs) of MoS2 and WSe2 are 2D semiconductors with strong, direct optical transitions that are governed by tightly Coulomb bound eletron-hole pairs (excitons). The optoelectronic properties of these transition metal dichalcogenides are directly related to the inherent crystal inversion symmetry breaking. It allows for efficient second harmonic generation (SHG) and is at the origin of chi…
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Monolayers (MLs) of MoS2 and WSe2 are 2D semiconductors with strong, direct optical transitions that are governed by tightly Coulomb bound eletron-hole pairs (excitons). The optoelectronic properties of these transition metal dichalcogenides are directly related to the inherent crystal inversion symmetry breaking. It allows for efficient second harmonic generation (SHG) and is at the origin of chiral optical selections rules, which enable efficient optical initialization of electrons in specific K-valleys in momentum space. Here we demonstrate how these unique non-linear and linear optical properties can be combined to efficiently prepare exciton valley coherence and polarization through resonant pum** of an excited exciton state. In particular a new approach to coherent alignment of excitons following two-photon excitation is demonstrated. We observe a clear deviation of the excited exciton spectrum from the standard Rydberg series via resonances in SHG spectroscopy and two- and one-photon absorption. The clear identification of the 2s and 2p exciton excited states combined with first principle calculations including strong anti-screening effects allows us to determine an exciton binding energy of the order of 600 meV in ML WSe2.
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Submitted 31 March, 2014;
originally announced April 2014.
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Exciton fine structure and spin decoherence in monolayers of transition metal dichalcogenides
Authors:
M. M. Glazov,
T. Amand,
X. Marie,
D. Lagarde,
L. Bouet,
B. Urbaszek
Abstract:
We study the neutral exciton energy spectrum fine structure and its spin dephasing in transition metal dichalcogenides such as MoS$_2$. The interaction of the mechanical exciton with its macroscopic longitudinal electric field is taken into account. The splitting between the longitudinal and transverse excitons is calculated by means of the both electrodynamical approach and…
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We study the neutral exciton energy spectrum fine structure and its spin dephasing in transition metal dichalcogenides such as MoS$_2$. The interaction of the mechanical exciton with its macroscopic longitudinal electric field is taken into account. The splitting between the longitudinal and transverse excitons is calculated by means of the both electrodynamical approach and $\mathbf k \cdot \mathbf p$ perturbation theory. This long-range exciton exchange interaction can induce valley polarization decay. The estimated exciton spin dephasing time is in the picosecond range, in agreement with available experimental data.
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Submitted 1 March, 2014;
originally announced March 2014.
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Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2
Authors:
G. Wang,
L. Bouet,
D. Lagarde,
M. Vidal,
A. Balocchi,
T. Amand,
X. Marie,
B. Urbaszek
Abstract:
Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electron in a specific K-valley in momentum space. Here we probe the valley dynamics in monolayer WSe2 by monitoring the emission and polarization dynamics of the well separated neutral excitons (bound electron…
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Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electron in a specific K-valley in momentum space. Here we probe the valley dynamics in monolayer WSe2 by monitoring the emission and polarization dynamics of the well separated neutral excitons (bound electron hole pairs) and charged excitons (trions) in photoluminescence. The neutral exciton photoluminescence intensity decay time is about 4ps, whereas the trion emission occurs over several tens of ps. The trion polarization dynamics shows a partial, fast initial decay within tens of ps before reaching a stable polarization of about 20%, for which a typical valley polarization decay time larger than 1ns can be inferred. This is a clear signature of stable, optically initialized valley polarization.
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Submitted 24 February, 2014;
originally announced February 2014.
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Fabrication of an InGaAs spin filter by implantation of paramagnetic centers
Authors:
C. T. Nguyen,
A. Balocchi,
D. Lagarde,
T. T. Zhang,
H. Carrère,
S. Mazzucato,
P. Barate,
T. Amand,
X. Marie
Abstract:
We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as high as 240% can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR is determined by the systematic analysis of…
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We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as high as 240% can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR is determined by the systematic analysis of different ion doses spanning four orders of magnitude. The application of a weak external magnetic field leads to a sizeable enhancement of the SDR ratio from the spin polarization of the nuclei surrounding the polarized implanted paramagnetic defects.
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Submitted 13 September, 2013;
originally announced September 2013.
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Carrier and polarization dynamics in monolayer MoS2
Authors:
D. Lagarde,
L. Bouet,
X. Marie,
C. R. Zhu,
B. L. Liu,
T. Amand,
P. H. Tan,
B. Urbaszek
Abstract:
In monolayer MoS2 optical transitions across the direct bandgap are governed by chiral selection rules, allowing optical valley initialization. In time resolved photoluminescence (PL) experiments we find that both the polarization and emission dynamics do not change from 4K to 300K within our time resolution. We measure a high polarization and show that under pulsed excitation the emission polariz…
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In monolayer MoS2 optical transitions across the direct bandgap are governed by chiral selection rules, allowing optical valley initialization. In time resolved photoluminescence (PL) experiments we find that both the polarization and emission dynamics do not change from 4K to 300K within our time resolution. We measure a high polarization and show that under pulsed excitation the emission polarization significantly decreases with increasing laser power. We find a fast exciton emission decay time on the order of 4ps. The absence of a clear PL polarization decay within our time resolution suggests that the initially injected polarization dominates the steady state PL polarization. The observed decrease of the initial polarization with increasing pump photon energy hints at a possible ultrafast intervalley relaxation beyond the experimental ps time resolution. By compensating the temperature induced change in bandgap energy with the excitation laser energy an emission polarization of 40% is recovered at 300K, close to the maximum emission polarization for this sample at 4K.
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Submitted 3 February, 2014; v1 submitted 3 August, 2013;
originally announced August 2013.
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Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots
Authors:
M. V. Durnev,
M. M. Glazov,
E. L. Ivchenko,
M. Jo,
T. Mano,
T. Kuroda,
K. Sakoda,
S. Kunz,
G. Sallen,
L. Bouet,
X. Marie,
D. Lagarde,
T. Amand,
B. Urbaszek
Abstract:
We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowa…
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We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.
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Submitted 29 November, 2012;
originally announced November 2012.
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Growth Direction Dependence of the Electron Spin Dynamics in {111} GaAs Quantum Wells
Authors:
H. Q. Ye,
G. Wang,
B. L. Liu,
Z. W. Shi,
W. X. Wang,
C. Fontaine,
A. Balocchi,
T. Amand,
D. Lagarde,
P. Renucci,
X. Marie
Abstract:
The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A…
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The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.
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Submitted 14 May, 2012; v1 submitted 31 March, 2012;
originally announced April 2012.
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Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells
Authors:
A. Balocchi,
Q. H. Duong,
P. Renucci,
B. Liu,
C. Fontaine,
T. Amand,
D. Lagarde,
X. Marie
Abstract:
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost van…
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The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.
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Submitted 28 July, 2011;
originally announced July 2011.
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Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots
Authors:
G. Sallen,
B. Urbaszek,
M. M. Glazov,
E. L. Ivchenko,
T. Kuroda,
T. Mano,
S. Kunz,
M. Abbarchi,
K. Sakoda,
D. Lagarde,
A. Balocchi,
X. Marie,
T. Amand
Abstract:
In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interpl…
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In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced \pm 3/2 heavy-hole mixing, an inherent property of systems with C_3v point-group symmetry.
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Submitted 30 June, 2011;
originally announced June 2011.
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Delay and distortion of slow light pulses by excitons in ZnO
Authors:
T. V. Shubina,
M. M. Glazov,
N. A. Gippius,
A. A. Toropov,
D. Lagarde,
P. Disseix,
J. Leymarie,
B. Gil,
G. Pozina,
J. P. Bergman,
B. Monemar
Abstract:
Light pulses propagating through ZnO undergo distortions caused by both bound and free excitons. Numerous lines of bound excitons dissect the pulse and induce slowing of light around them, to the extend dependent on their nature. Exciton-polariton resonances determine the overall pulse delay and attenuation. The delay time of the higher-energy edge of a strongly curved light stripe approaches 1.6…
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Light pulses propagating through ZnO undergo distortions caused by both bound and free excitons. Numerous lines of bound excitons dissect the pulse and induce slowing of light around them, to the extend dependent on their nature. Exciton-polariton resonances determine the overall pulse delay and attenuation. The delay time of the higher-energy edge of a strongly curved light stripe approaches 1.6 ns at 3.374 eV with a 0.3 mm propagation length. Modelling the data of cw and time-of-flight spectroscopies has enabled us to determine the excitonic parameters, inherent for bulk ZnO. We reveal the restrictions on these parameters induced by the light attenuation, as well as a discrepancy between the parameters characterizing the surface and internal regions of the crystal.
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Submitted 8 March, 2011;
originally announced March 2011.
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Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature
Authors:
Stéphane Faure,
Christelle Brimont,
Thierry Guillet,
T. Bretagnon,
B. Gil,
François Médard,
D. Lagarde,
Pierre Disseix,
Joel Leymarie,
Jesús Zúñiga-Pérez,
Mathieu Leroux,
Eric Frayssinet,
Jean-Christophe Moreno,
Fabrice Semond,
Sophie Bouchoule
Abstract:
The strong coupling regime in a ZnO microcavity is investigated through room temperature photoluminescence and reflectivity experiments. The simultaneous strong coupling of excitons to the cavity mode and the first Bragg mode is demonstrated at room temperature. The polariton relaxation is followed as a function of the excitation density. A relaxation bottleneck is evidenced in the Bragg-mode po…
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The strong coupling regime in a ZnO microcavity is investigated through room temperature photoluminescence and reflectivity experiments. The simultaneous strong coupling of excitons to the cavity mode and the first Bragg mode is demonstrated at room temperature. The polariton relaxation is followed as a function of the excitation density. A relaxation bottleneck is evidenced in the Bragg-mode polariton branch. It is partly broken under strong excitation density, so that the emission from this branch dominates the one from cavity-mode polaritons.
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Submitted 25 September, 2009; v1 submitted 27 May, 2009;
originally announced May 2009.
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Exciton and hole spin dynamics in ZnO
Authors:
D. Lagarde,
A. Balocchi,
P. Renucci,
H. Carrère,
F. Zhao,
T. Amand,
X. Marie,
Z. X. Mei,
X. L. Du,
Q. K. Xue
Abstract:
The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and non-intentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find $τ^{s}_h$$\sim$350 ps at T=1.7 K in the ZnO epilayer. The strong energy and tempera…
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The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and non-intentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find $τ^{s}_h$$\sim$350 ps at T=1.7 K in the ZnO epilayer. The strong energy and temperature dependences of the photoluminescence polarization dynamics are well explained by the fast free exciton spin relaxation time and the ionization of bound excitons.
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Submitted 15 April, 2008;
originally announced April 2008.
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Room temperature Optical Orientation of Exciton Spin in cubic GaN/AlN quantum dots
Authors:
D. Lagarde,
A. Balocchi,
H. Carrere,
P. Renucci,
T. Amand,
X. Marie,
S. Founta,
H. Mariette
Abstract:
The optical orientation of the exciton spin in an ensemble of self-organized cubic GaN/AlN quantum dots is studied by time-resolved photoluminescence. Under a polarized quasi-resonant excitation, the luminescence linear polarization exhibits no temporal decay, even at room temperature. This demonstrates the robustness of the exciton spin polarization in these cubic nitride nanostructures, with c…
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The optical orientation of the exciton spin in an ensemble of self-organized cubic GaN/AlN quantum dots is studied by time-resolved photoluminescence. Under a polarized quasi-resonant excitation, the luminescence linear polarization exhibits no temporal decay, even at room temperature. This demonstrates the robustness of the exciton spin polarization in these cubic nitride nanostructures, with characteristic decay times longer than 10 ns.
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Submitted 28 November, 2007;
originally announced November 2007.
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Spin-dependent electron dynamics and recombination in GaAs(1-x)N(x) alloys at room temperature
Authors:
V. K. Kalevich,
A. Yu. Shiryaev,
E. L. Ivchenko,
A. Yu. Egorov,
L. Lombez,
D. Lagarde,
X. Marie,
T. Amand
Abstract:
We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pum** at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns.…
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We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pum** at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ~150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in dynamical polarization of bound electrons. We have developed a nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers which describes the experimental dependencies, in particular, electron spin quantum beats observed in a transverse magnetic field.
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Submitted 27 December, 2006;
originally announced December 2006.
