Showing 1–50 of 50 results for author: Lagally, M G

Control of threshold voltages in Si/SiGe quantum devices via optical illumination

Authors: M. A. Wolfe, Brighton X. Coe, Justin S. Edwards, Tyler J. Kovach, Thomas McJunkin, Benjamin Harpt, D. E. Savage, M. G. Lagally, R. McDermott, Mark Friesen, Shimon Kolkowitz, M. A. Eriksson

Abstract: Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate v… ▽ More Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate voltage can be used to set a specific, stable, and reproducible threshold voltage that, over a wide range in gate bias, is equal to that gate bias. Outside this range, the threshold voltage can still be tuned, although the resulting threshold voltage is no longer equal to the applied gate bias during illumination. We present a simple and intuitive model that provides a mechanism for the tunability in gate bias. The model presented also explains why cryogenic illumination is successful at resetting quantum dot qubit devices after undesired charging events. △ Less

Submitted 20 June, 2024; v1 submitted 21 December, 2023; originally announced December 2023.

Comments: 8 pages, 6 figures

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Authors: Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson

Abstract: Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new hete… ▽ More Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices. △ Less

Submitted 15 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Comments: Main text and supplemental information, 11 pages, 7 figures

Journal ref: Nature Communications 13, 7777 (2022)

A Simple Numerical Method for Evaluating Heat Dissipation from Curved Wires with Periodic Applied Heating

Authors: Gabriel R. Jaffe, Victor W. Brar, Max G. Lagally, Mark A. Eriksson

Abstract: In many situations, the dual-purpose heater/thermometer wires used in the three-omega method, one of the most precise and sensitive techniques for measuring the thermal conductivity of thin films and interfaces, must include bends and curves to avoid obstructions on the surface of a sample. Although the three-omega analysis assumes that the heating wire is infinitely long and straight, recent expe… ▽ More In many situations, the dual-purpose heater/thermometer wires used in the three-omega method, one of the most precise and sensitive techniques for measuring the thermal conductivity of thin films and interfaces, must include bends and curves to avoid obstructions on the surface of a sample. Although the three-omega analysis assumes that the heating wire is infinitely long and straight, recent experimental work has demonstrated that in some cases curved-wire geometries can be used without introducing detectable systematic error. We describe a general numerical method that can be used to calculate the temperature of three-omega heating wires with arbitrary wire geometries. This method provides experimentalists with a simple quantitative procedure for calculating how large the systematic error caused by a particular wire asymmetry will be. We show calculations of two useful cases: a straight wire with a single bend of arbitrary angle and a wire that forms a circle. We find that the amplitude of the in-phase temperature oscillations near a wire that forms a circle differs from the prediction using the analytic straight-line source solution by $<$12%, provided that the thermal penetration depth is less than ten times the radius of curvature of the wire path. The in-phase temperature amplitude 1.5 wire widths away from a 90$^{\circ}$ bend in a wire is within 11% of the straight-line source prediction for all penetration depths greater than the wire width. Our calculations indicate that the straight-line source solution breaks down significantly when the wire bend angle is less than 45$^{\circ}$. △ Less

Submitted 8 October, 2021; originally announced October 2021.

Comments: 4 pages, 4 figures

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Authors: Thomas McJunkin, E. R. MacQuarrie, Leah Tom, S. F. Neyens, J. P. Dodson, Brandur Thorgrimsson, J. Corrigan, H. Ekmel Ercan, D. E. Savage, M. G. Lagally, Robert Joynt, S. N. Coppersmith, Mark Friesen, M. A. Eriksson

Abstract: Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure i… ▽ More Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. B 104, 085406 (2021)

Long Phonon Mean Free Paths Observed in Cross-plane Thermal-Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

Authors: Gabriel R. Jaffe, Keenan J. Smith, Kenji Watanabe, Takashi Taniguchi, Max G. Lagally, Mark A. Eriksson, Victor W. Brar

Abstract: Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of the cross-plane thermal conductivity is not known, and the cross-plane phonon… ▽ More Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of the cross-plane thermal conductivity is not known, and the cross-plane phonon mean free paths in hBN have not been measured. We measure the cross-plane thermal conductivity of hBN flakes exfoliated from bulk crystals. We find that the thermal conductivity is extremely sensitive to film thickness. We measure a forty-fold increase in the cross-plane thermal conductivity between 7 nm and 585 nm flakes at 295 K. We attribute the large increase in thermal conductivity with increasing thickness to contributions from phonons with long mean free paths (MFPs), spanning many hundreds of nanometers in the thickest flakes. When planar twist interfaces are introduced into the crystal by mechanically stacking multiple thin flakes, the cross-plane thermal conductivity of the stack is found to be a factor of seven below that of individual flakes with similar total thickness, thus providing strong evidence that phonon scattering at twist boundaries limits the maximum phonon MFPs. These results have important implications for hBN integration in nanoelectronics and improve our understanding of thermal transport in two-dimensional materials. △ Less

Submitted 8 October, 2021; v1 submitted 12 March, 2021; originally announced March 2021.

Comments: 4 pages, 3 figures

Journal ref: ACS Appl. Mater. Interfaces 2023, 15, 9, 12545-12550

Three-Omega Thermal-Conductivity Measurements with Curved Heater Geometries

Authors: Gabriel R. Jaffe, Keenan J. Smith, Victor W. Brar, Max G. Lagally, Mark A. Eriksson

Abstract: The three-omega method, a powerful technique to measure the thermal conductivity of nanometer-thick films and the interfaces between them, has historically employed straight conductive wires to act as both heaters and thermometers. When investigating stochastically prepared samples such as two-dimensional materials and nanomembranes, residue and excess material can make it difficult to fit the req… ▽ More The three-omega method, a powerful technique to measure the thermal conductivity of nanometer-thick films and the interfaces between them, has historically employed straight conductive wires to act as both heaters and thermometers. When investigating stochastically prepared samples such as two-dimensional materials and nanomembranes, residue and excess material can make it difficult to fit the required millimeter-long straight wire on the sample surface. There are currently no available criteria for how diverting three-omega heater wires around obstacles affects the validity of the thermal measurement. In this Letter, we quantify the effect of wire curvature by performing three-omega experiments with a wide range of frequencies using both curved and straight heater geometries on SiO$_2$/Si samples. When the heating wire is curved, we find that the measured Si substrate thermal conductivity changes by only 0.2%. Similarly, we find that wire curvature has no significant effect on the determination of the thermal resistance of a $\sim$65 nm SiO$_2$ layer, even for the sharpest corners considered here, for which the largest measured ratio of the thermal penetration depth of the applied thermal wave to radius of curvature of the heating wire is 4.3. This result provides useful design criteria for three-omega experiments by setting a lower bound for the maximum ratio of thermal penetration depth to wire radius of curvature. △ Less

Submitted 4 May, 2020; originally announced May 2020.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 117, 073102 (2020)

Repetitive quantum non-demolition measurement and soft decoding of a silicon spin qubit

Authors: Xiao Xue, Benjamin D'Anjou, Thomas F. Watson, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, William A. Coish, Lieven M. K. Vandersypen

Abstract: Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logica… ▽ More Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logical qubit and the other serving as the ancilla. Making use of a two-qubit controlled-rotation gate, the state of the logical qubit is mapped onto the ancilla, followed by a destructive readout of the ancilla. Repeating this procedure enhances the logical readout fidelity from $75.5\pm 0.3\%$ to $94.5 \pm 0.2\%$ after 15 ancilla readouts. In addition, we compare the conventional thresholding method with an improved signal processing method called soft decoding that makes use of analog information in the readout signal to better estimate the state of the logical qubit. We demonstrate that soft decoding leads to a significant reduction in the required number of repetitions when the readout errors become limited by Gaussian noise, for instance in the case of readouts with a low signal-to-noise ratio. These results pave the way for the implementation of quantum error correction with spin qubits in silicon. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. X 10, 021006 (2020)

Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

Authors: Jelmer M. Boter, Xiao Xue, Tobias S. Krähenmann, Thomas F. Watson, Vickram N. Premakumar, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, Robert Joynt, Lieven M. K. Vandersypen

Abstract: We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting… ▽ More We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Comments: 6+6 pages, 4+3 figures

Journal ref: Phys. Rev. B 101, 235133 (2020)

Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

Authors: X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M. K. Vandersypen

Abstract: We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity i… ▽ More We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: 6+5 pages, 6 figures

Journal ref: Phys. Rev. X 9, 021011 (2019)

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

Authors: J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, M. J. Calderón, S. N. Coppersmith, M. A. Eriksson, Mark Friesen

Abstract: We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the… ▽ More We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits. △ Less

Submitted 25 May, 2018; originally announced May 2018.

Comments: 7 pages

Journal ref: Phys. Rev. B 98, 165438 (2018)

The critical role of substrate disorder in valley splitting in Si quantum wells

Authors: Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson, T. J. Knapp, Thomas McJunkin, L. M. K. Vandersypen, Payam Amin, Nicole K. Thomas, James S. Clarke, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum we… ▽ More Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum wells with approximately five monolayers of pure Ge at the upper barrier, finding mobilities as high as 70,000 cm$^2$/Vs, compared to 100,000 cm$^2$/Vs measured in samples with no Ge layer. Activation energy measurements in quantum Hall states corresponding to Fermi levels in the gap between different valley states reveal energy gaps ranging from 30 to over 200 $μ$eV, and we extract a surprisingly strong dependence of the energy gap on electron density. We interpret our results using tight binding theory and argue that our results are evidence that atomic scale disorder at the quantum well interface dominates the behavior of the valley splittings of these modified heterostructures. △ Less

Submitted 15 June, 2018; v1 submitted 5 April, 2018; originally announced April 2018.

Comments: 7 pages

Journal ref: Applied Physics Letters 112, 243107 (2018)

Ubiquitous Ideal Spin-Orbit Coupling in a Screw Dislocation in Semiconductors

Authors: Lin Hu, Huaqing Huang, Zhengfei Wang, W. Jiang, Xiaojuan Ni, Yinong Zhou, V. Zielasek, M. G. Lagally, Bing Huang, Feng Liu

Abstract: We theoretically demonstrate that screw dislocation (SD), a 1D topological defect widely present in semiconductors, exhibits ubiquitously a new form of spin-orbit coupling (SOC) effect. Differing from the widely known conventional 2D Rashba-Dresselhaus (RD) SOC effect that typically exists at surfaces/interfaces, the deep-level nature of SD-SOC states in semiconductors readily makes it an ideal SO… ▽ More We theoretically demonstrate that screw dislocation (SD), a 1D topological defect widely present in semiconductors, exhibits ubiquitously a new form of spin-orbit coupling (SOC) effect. Differing from the widely known conventional 2D Rashba-Dresselhaus (RD) SOC effect that typically exists at surfaces/interfaces, the deep-level nature of SD-SOC states in semiconductors readily makes it an ideal SOC. Remarkably, the spin texture of 1D SD-SOC, pertaining to the inherent symmetry of SD, exhibits a significantly higher degree of spin coherency than the 2D RD-SOC. Moreover, the 1D SD-SOC can be tuned by ionicity in compound semiconductors to ideally suppress spin relaxation, as demonstrated by comparative first-principles calculations of SDs in Si/Ge, GaAs, and SiC. Our findings therefore open a new door to manipulating spin transport in semiconductors by taking advantage of an otherwise detrimental topological defect. △ Less

Submitted 26 January, 2018; originally announced January 2018.

Comments: 16 pages, 4 figures

Journal ref: Phys. Rev. Lett. 121, 066401 (2018)

Observation of large multiple scattering effects in ultrafast electron diffraction on single crystal silicon

Authors: I. Gonzalez Vallejo, G. Gallé, B. Arnaud, S. A. Scott, M. G. Lagally, D. Boschetto, P. E. Coulon, G. Rizza, F. Houdellier, D. Le Bolloc'h, J. Faure

Abstract: We report on ultrafast electron diffraction on high quality single crystal silicon. The ultrafast dynamics of the Bragg peaks exhibits a giant photo-induced response which can only be explained in the framework of dynamical diffraction theory, taking into account multiple scattering of the probing electrons in the sample. In particular, we show that lattice heating following photo-excitation can c… ▽ More We report on ultrafast electron diffraction on high quality single crystal silicon. The ultrafast dynamics of the Bragg peaks exhibits a giant photo-induced response which can only be explained in the framework of dynamical diffraction theory, taking into account multiple scattering of the probing electrons in the sample. In particular, we show that lattice heating following photo-excitation can cause an unexpected increase of the Bragg peak intensities, in contradiction with the well-known Debye-Waller effect. We anticipate that multiple scattering should be systematically considered in ultrafast electron diffraction on high quality crystals as it dominates the Bragg peak dynamics. In addition, taking into account multiple scattering effects opens the way to quantitative studies of non-equilibrium dynamics of defects in quasi-perfect crystals. △ Less

Submitted 16 November, 2017; originally announced November 2017.

Comments: 11 pages, 7 figures (including supplementary information)

Journal ref: Phys. Rev. B 97, 054302 (2018)

A programmable two-qubit quantum processor in silicon

Authors: T. F. Watson, S. G. J. Philips, E. Kawakami, D. R. Ward, P. Scarlino, M. Veldhorst, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Here, quantum dot based spin qubits may offer significant advantages due to their potential for high densities, all-electrical operation, and integration… ▽ More With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Here, quantum dot based spin qubits may offer significant advantages due to their potential for high densities, all-electrical operation, and integration onto an industrial platform. In this system, the initialisation, readout, single- and two-qubit gates have been demonstrated in various qubit representations. However, as seen with other small scale quantum computer demonstrations, combining these elements leads to new challenges involving qubit crosstalk, state leakage, calibration, and control hardware which provide invaluable insight towards scaling up. Here we address these challenges and demonstrate a programmable two-qubit quantum processor in silicon by performing both the Deutsch-Josza and the Grover search algorithms. In addition, we characterise the entanglement in our processor through quantum state tomography of Bell states measuring state fidelities between 85-89% and concurrences between 73-80%. These results pave the way for larger scale quantum computers using spins confined to quantum dots. △ Less

Submitted 31 May, 2018; v1 submitted 14 August, 2017; originally announced August 2017.

Valley dependent anisotropic spin splitting in silicon quantum dots

Authors: Rifat Ferdous, Erika Kawakami, Pasquale Scarlino, Michał P. Nowak, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Mark A. Eriksson, Lieven M. K. Vandersypen, Rajib Rahman

Abstract: Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically… ▽ More Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. Here, we report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs. △ Less

Submitted 17 August, 2017; v1 submitted 20 February, 2017; originally announced February 2017.

Comments: 9 pages, 5 figures, supplementary (13 pages, 7 figures)

Journal ref: npj Quantum Information 4, 26 (2018)

Effects of charge noise on a pulse-gated singlet-triplet $S-T_-$ qubit

Authors: Zhenyi Qi, X. Wu, D. R. Ward, J. R. Prance, Dohun Kim, John King Gamble, R. T. Mohr, Zhan Shi, D. E. Savage, M. G. Lagally, M. A. Eriksson, Mark Friesen, S. N. Coppersmith, M. G. Vavilov

Abstract: We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from c… ▽ More We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations are low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate. △ Less

Submitted 15 June, 2017; v1 submitted 24 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. B 96, 115305 (2017)

Extending the coherence of a quantum dot hybrid qubit

Authors: Brandur Thorgrimsson, Dohun Kim, Yuan-Chi Yang, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operatin… ▽ More Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit's resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time $T_{2}^{*}$ of $177~\mathrm{ns}$ and a Rabi decay time, $1/Γ_{\mathrm{Rabi}}$, exceeding $1~\mathrm{μs}$. We find that the slowest $Γ_{\mathrm{Rabi}}$ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself. △ Less

Submitted 19 June, 2017; v1 submitted 15 November, 2016; originally announced November 2016.

Comments: 10 pages, 6 figures. Supplementary material is included as appendices

Journal ref: npj Quantum Information 3, Article number: 32 (2017)

Dressed photon-orbital states in a quantum dot: Inter-valley spin resonance

Authors: P. Scarlino, E. Kawakami, T. Jullien, D. R. Ward, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces tran… ▽ More The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces transitions between both valley-orbit and spin states. We show that this system is highly nonlinear and can be understood through the use of dressed photon-orbital states, enabling a unified understanding of the six microwave resonance lines we observe. Some of these resonances are inter-valley spin transitions that arise from a non-adiabatic process in which both the valley and the spin degree of freedom are excited simultaneously. For these transitions, involving a change in valley-orbit state, we find a tenfold increase in sensitivity to electric fields and electrical noise compared to pure spin transitions, strongly reducing the phase coherence when changes in valley-orbit index are incurred. In contrast to this non-adiabatic transition, the pure spin transitions, whether arising from harmonic or subharmonic generation, are shown to be adiabatic in the orbital sector. The non-linearity of the system is most strikingly manifest in the observation of a dynamical anti-crossing between a spin-flip, inter-valley transition and a three-photon transition enabled by the strong nonlinearity we find in this seemly simple system. △ Less

Submitted 18 May, 2017; v1 submitted 23 August, 2016; originally announced August 2016.

Comments: 23 pages, 11 figures, supplementary material included

Journal ref: Phys. Rev. B 95, 165429 (2017)

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

Authors: D. R. Ward, Dohun Kim, D. E. Savage, M. G. Lagally, R. H. Foote, Mark Friesen, S. N. Coppersmith, Mark A. Eriksson

Abstract: Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in develo** robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscil… ▽ More Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in develo** robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between double quantum dots by measuring the detuning energy shift ($\approx$ 75 $μ$eV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast conditional Landau-Zener-Stuckelberg interferences with conditonal $π$ phase flip time about 80 ps, showing promising pathways toward multi-qubit entanglement control in semiconductor quantum dots. △ Less

Submitted 27 April, 2016; originally announced April 2016.

Comments: 9 pages, 8 figures including supplementary information

Journal ref: npj. Quant. Inf. 2 16032 (2016)

Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet

Authors: E. Kawakami, T. Jullien, P. Scarlino, D. R. Ward, D. E. Savage, M. G. Lagally, V. V. Dobrovitski, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from… ▽ More The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in substrate. The coherence time measured using dynamical decoupling extends up to $\approx$ 400 $μ$s for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10 kHz $-$ 1 MHz range, possibly because charge noise affecting the spin via the micromagnet gradient. This work shows that an electron spin in a Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification. △ Less

Submitted 26 February, 2016; originally announced February 2016.

Journal ref: PNAS 2016 113 (42) 11738-11743

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

Authors: T. J. Knapp, R. T. Mohr, Yize Stephanie Li, Brandur Thorgrimsson, Ryan H. Foote, Xian Wu, Daniel R. Ward, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, m… ▽ More We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field. △ Less

Submitted 29 October, 2015; originally announced October 2015.

Comments: 9 pages, 4 figures

Journal ref: Nanotechnology 27, 154002 (2016)

Identifying single electron charge sensor events using wavelet edge detection

Authors: J. R. Prance, B. J. Van Bael, C. B. Simmons, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an a… ▽ More The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an alternative method for identifying charge sensor events using wavelet edge detection. The technique is convenient to use and we show that, with realistic signals and a single tunable parameter, wavelet detection can outperform thresholding and is significantly more tolerant to 1/f and low-frequency noise. △ Less

Submitted 7 June, 2015; originally announced June 2015.

Comments: 11 pages, 4 figures

Journal ref: Nanotechnology 26, 215201 (2015)

Second Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot

Authors: P. Scarlino, E. Kawakami, D. R. Ward, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: We demonstrate coherent driving of a single electron spin using second harmonic excitation in a Si/SiGe quantum dot. Our estimates suggest that the anharmonic dot confining potential combined with a gradient in the transverse magnetic field dominates the second harmonic response. As expected, the Rabi frequency depends quadratically on the driving amplitude and the periodicity with respect to the… ▽ More We demonstrate coherent driving of a single electron spin using second harmonic excitation in a Si/SiGe quantum dot. Our estimates suggest that the anharmonic dot confining potential combined with a gradient in the transverse magnetic field dominates the second harmonic response. As expected, the Rabi frequency depends quadratically on the driving amplitude and the periodicity with respect to the phase of the drive is twice that of the fundamental harmonic. The maximum Rabi frequency observed for the second harmonic is just a factor of two lower than that achieved for the first harmonic when driving at the same power. Combined with the lower demands on microwave circuitry when operating at half the qubit frequency, these observations indicate that second harmonic driving can be a useful technique for future quantum computation architectures. △ Less

Submitted 24 April, 2015; originally announced April 2015.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. Lett. 115, 106802 (2015)

High fidelity resonant gating of a silicon based quantum dot hybrid qubit

Authors: Dohun Kim, D. R. Ward, C. B. Simmons, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, Mark A. Eriksson

Abstract: Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for develo** spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimenta… ▽ More Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for develo** spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimentally. Recently, a quantum dot hybrid qubit formed by three electrons in double quantum dot was proposed, and non-adiabatic pulsed-gate operation was implemented experimentally, demonstrating simple and fast electrical manipulations of spin states with a promising ratio of coherence time to manipulation time. However, the overall gate fidelity of the pulse-gated hybrid qubit is limited by relatively fast dephasing due to charge noise during one of the two required gate operations. Here we perform the first microwave-driven gate operations of a quantum dot hybrid qubit, avoiding entirely the regime in which it is most sensitive to charge noise. Resonant detuning modulation along with phase control of the microwaves enables a pi rotation time of less than 5 ns (50 ps) around X(Z)-axis with high fidelities > 93 (96) %. We also implement Hahn echo and Carr-Purcell (CP) dynamic decoupling sequences with which we demonstrate a coherence time of over 150 ns. We further discuss a pathway to improve gate fidelity to above 99 %, exceeding the threshold for surface code based quantum error correction. △ Less

Submitted 10 February, 2015; originally announced February 2015.

Comments: 9 pages and 6 figures including supplementary information

Journal ref: npj Quantum Information 1 15004 (2015)

Microwave-driven coherent operations of a semiconductor quantum dot charge qubit

Authors: Dohun Kim, D. R. Ward, C. B. Simmons, John King Gamble, Robin Blume-Kohout, Erik Nielsen, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, because of the strong coupling of electric fields to the electron. However, charge noise also couples strongly to this qubit, resulting in rapid dephasi… ▽ More A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, because of the strong coupling of electric fields to the electron. However, charge noise also couples strongly to this qubit, resulting in rapid dephasing at nearly all operating points, with the exception of one special 'sweet spot'. Fast dc voltage pulses have been used to manipulate semiconductor charge qubits, but these previous experiments did not achieve high-fidelity control, because dc gating requires excursions away from the sweet spot. Here, by using resonant ac microwave driving, we achieve coherent manipulation of a semiconductor charge qubit, demonstrating a Rabi frequency of up to 2GHz, a value approaching the intrinsic qubit frequency of 4.5GHz. Z-axis rotations of the qubit are well-protected at the sweet spot, and by using ac gating, we demonstrate the same protection for rotations about arbitrary axes in the X-Y plane of the qubit Bloch sphere. We characterize operations on the qubit using two independent tomographic approaches: standard process tomography and a newly developed method known as gate set tomography. Both approaches show that this qubit can be operated with process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations. △ Less

Submitted 28 July, 2014; originally announced July 2014.

Comments: 9 pages, 5 figures including supplementary information

Journal ref: Nature Nanotechnology 10 243 to 247 (2015)

Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot

Authors: E. Kawakami, P. Scarlino, D. R. Ward, F. R. Braakman, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally affects the qubit, but still allows qubit control and scalability. Here we demonstrate a long-lived single-electron spin qubit in a Si/SiGe quantum dot with all-… ▽ More Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally affects the qubit, but still allows qubit control and scalability. Here we demonstrate a long-lived single-electron spin qubit in a Si/SiGe quantum dot with all-electrical two-axis control. The spin is driven by resonant microwave electric fields in a transverse magnetic field gradient from a local micromagnet, and the spin state is read out in single-shot mode. Electron spin resonance occurs at two closely spaced frequencies, which we attribute to two valley states. Thanks to the weak hyperfine coupling in silicon, Ramsey and Hahn echo decay timescales of 1us and 40us, respectively, are observed. This is almost two orders of magnitude longer than the intrinsic timescales in III-V quantum dots, while gate operation times are comparable to those achieved in GaAs. This places the single-qubit rotations in the fault-tolerant regime and strongly raises the prospects of quantum information processing based on quantum dots. △ Less

Submitted 22 April, 2014; originally announced April 2014.

Comments: submitted 26th February 2014

Journal ref: Nat. Nano. 9, 666 (2014)

Two-axis control of a singlet-triplet qubit with an integrated micromagnet

Authors: Xian Wu, D. R. Ward, J. R. Prance, Dohun Kim, John King Gamble, R. T. Mohr, Zhan Shi, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micro magnet, the magnetic field difference $ΔB$ between the two sides of the double dot is large enough to enable the achievement… ▽ More The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micro magnet, the magnetic field difference $ΔB$ between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit's Bloch vector about two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time $T_{2}^{*}$ is determined. By measuring $T_{2}^{*}$ at many different values of the exchange coupling $J$ and at two different values of $ΔB$, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on $T_{2}^{*}$ arising from charge noise and from coupling to nuclear spins. △ Less

Submitted 24 November, 2014; v1 submitted 28 February, 2014; originally announced March 2014.

Comments: 10 pages, 9 figures

Journal ref: Proc. Natl. Acad. Sci. 111, 11938 (2014)

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

Authors: Dohun Kim, Zhan Shi, C. B. Simmons, D. R. Ward, J. R. Prance, Teck Seng Koh, John King Gamble, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for i… ▽ More The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Further, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pum** of nuclear spins, or the addition of a third quantum dot. Here we demonstrate a new qubit that offers both simplicity - it requires no special preparation and lives in a double quantum dot with no added complexity - and is very fast: we demonstrate full control on the Bloch sphere with $π$-rotation times less than 100 ps in two orthogonal directions. We report full process tomography, extracting high fidelities equal to or greater than 85% for X-rotations and 94% for Z-rotations. We discuss a path forward to fidelities better than the threshold for quantum error correction. △ Less

Submitted 17 January, 2014; originally announced January 2014.

Comments: 6 pages, excluding Appendix

Journal ref: Nature 511, 70 (2014)

Fast coherent manipulation of three-electron states in a double quantum dot

Authors: Zhan Shi, C. B. Simmons, Daniel R. Ward, J. R. Prance, Xian Wu, Teck Seng Koh, John King Gamble, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on… ▽ More A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on a system with more electrons per quantum dot, in a double dot with three electrons. We demonstrate that tailored pulse sequences can be used to induce coherent rotations between 3-electron quantum states. Certain pulse sequences yield coherent oscillations with a very high figure of merit (the ratio of coherence time to rotation time) of >100. The presence of the third electron enables very fast rotations to all possible states, in contrast to the case when only two electrons are used, in which some rotations are slow. The minimum oscillation frequency we observe is >5 GHz. △ Less

Submitted 2 August, 2013; originally announced August 2013.

Comments: 5 pages, 2 figures, submitted for publication

Journal ref: Nat. Commun. 5:3020 (2014)

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Authors: Daniel R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson

Abstract: Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing makes it feasible to characterize… ▽ More Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing makes it feasible to characterize a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring currently in common use. We use this approach to characterize three nominally identical quantum-point contact channels, enabling comparison of their threshold voltages for accumulation and their pinch-off voltages during a single cool-down of a dilution refrigerator. △ Less

Submitted 8 May, 2013; originally announced May 2013.

Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna

Authors: E. Kawakami, P. Scarlino, L. R. Schreiber, J. R. Prance, D. E. Savage, M. G. Lagally, M. A. Eriksson, L. M. K. Vandersypen

Abstract: We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by h… ▽ More We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by heating of the reservoirs. △ Less

Submitted 10 January, 2013; originally announced January 2013.

Journal ref: Appl. Phys. Lett. 103, 132410 (2013)

Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots

Authors: Mingyun Yuan, R. Joynt, Zhen Yang, Chunyang Tang, D. E. Savage, M. G. Lagally, M. A. Eriksson, A. J. Rimberg

Abstract: We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side… ▽ More We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for non-zero magnetic field, a phenomenon consistent with valley non- conservation in tunneling, is observed in two samples. △ Less

Submitted 29 June, 2014; v1 submitted 4 December, 2012; originally announced December 2012.

Comments: 16 pages, 7 figures

Journal ref: Phys. Rev. B 90, 035302, (2014)

Coherent Quantum Oscillations in a Silicon Charge Qubit

Authors: Zhan Shi, C. B. Simmons, Daniel. R. Ward, J. R. Prance, R. T. Mohr, Teck Seng Koh, John King Gamble, Xian. Wu, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated b… ▽ More Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism. △ Less

Submitted 17 July, 2013; v1 submitted 2 August, 2012; originally announced August 2012.

Comments: 5 pages plus 3 page supplemental (8 pages total)

Journal ref: Phys. Rev. B 88, 075416 (2013)

A fast "hybrid" silicon double quantum dot qubit

Authors: Zhan Shi, C. B. Simmons, J. R. Prance, John King Gamble, Teck Seng Koh, Yun-Pil Shim, Xuedong Hu, D. E. Savage, M. G. Lagally, M. A. Eriksson, Mark Friesen, S. N. Coppersmith

Abstract: We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occ… ▽ More We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occupied dot. The architecture is relatively simple to fabricate, a universal set of fast operations can be implemented electrically, and the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices. △ Less

Submitted 30 October, 2011; originally announced October 2011.

Comments: Includes text and supplemental material, 12 pages, 9 figures

Journal ref: Phys. Rev. Lett. 108, 140503 (2012)

Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

Authors: J. R. Prance, Zhan Shi, C. B. Simmons, D. E. Savage, M. G. Lagally, L. R. Schreiber, L. M. K. Vandersypen, Mark Friesen, Robert Joynt, S. N. Coppersmith, M. A. Eriksson

Abstract: We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three tripl… ▽ More We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T. △ Less

Submitted 2 November, 2011; v1 submitted 28 October, 2011; originally announced October 2011.

Comments: 4 pages, 3 figures, supplemental information. Typos fixed; updated to submitted version

Journal ref: Phys. Rev. Lett. 108, 046808 (2012)

Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

Authors: Zhan Shi, C. B. Simmons, J. R. Prance, John King Gamble, Mark Friesen, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson

Abstract: We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an essential parameter describing spin qubits, and we extract this splitting from the data. We find it to be tunable by lateral displacement of the dot, which is realiz… ▽ More We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an essential parameter describing spin qubits, and we extract this splitting from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state. △ Less

Submitted 11 December, 2011; v1 submitted 2 September, 2011; originally announced September 2011.

Comments: 4 pages with 3 figures

Journal ref: Appl. Phys. Lett. 99, 233108 (2011)

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Authors: Mingyun Yuan, Feng Pan, Zhen Yang, T. J. Gilheart, Fei Chen, D. E. Savage, M. G. Lagally, M. A. Eriksson, A. J. Rimberg

Abstract: We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the S-SET are observed at a t… ▽ More We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the S-SET are observed at a temperature of 0.3 K. Coupling of the S-SET to the QD is confirmed by using the S-SET to perform sensing of the QD charge state. △ Less

Submitted 22 February, 2011; originally announced February 2011.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 98, 142104 (2011)

Tunable spin-selective loading of a silicon spin qubit

Authors: C. B. Simmons, J. R. Prance, B. J. Van Bael, Teck Seng Koh, Zhan Shi, D. E. Savage, M. G. Lagally, R. Joynt, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manip… ▽ More The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications. △ Less

Submitted 27 October, 2010; originally announced October 2010.

Comments: 4 pages, 3 figures, Supplemental Information

Journal ref: Phys. Rev. Lett. 106, 156804 (2011)

Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot

Authors: Madhu Thalakulam, C. B. Simmons, B. J. Van Bael, B. M. Rosemeyer, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupa… ▽ More We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupation that are analogous to Coulomb diamonds. Excited-state energies can be read directly from the plot, and we develop a rate model that enables a quantitative understanding of the relative sizes of different electron tunnel rates. △ Less

Submitted 13 July, 2011; v1 submitted 5 October, 2010; originally announced October 2010.

Comments: 9 pages

Journal ref: Phys. Rev. B 84, 045307 (2011)

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

Authors: C. B. Simmons, Teck Seng Koh, Nakul Shaji, Madhu Thalakulam, L. J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, Robert Joynt, Robert Blick, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when… ▽ More We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed. △ Less

Submitted 5 April, 2011; v1 submitted 31 August, 2010; originally announced August 2010.

Comments: published version, 18 pages

Journal ref: Phys. Rev. B 82, 245312 (2010)

Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

Authors: Madhu Thalakulam, C. B. Simmons, B. M. Rosemeyer, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measuremen… ▽ More We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation. Pulsed gate voltage measurements are used to validate the approach. △ Less

Submitted 3 March, 2010; originally announced March 2010.

Comments: 4 pages, double column, 3 figures

Journal ref: Appl. Phys. Lett. 96, 183104 (2010)

Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

Authors: C. B. Simmons, Madhu Thalakulam, B. M. Rosemeyer, B. J. Van Bael, E. K. Sackmann, D. E. Savage, M. G. Lagally, R. Joynt, M. Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes t… ▽ More We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots. △ Less

Submitted 11 May, 2009; originally announced May 2009.

Comments: 5 pages, 4 figures, submitted for publication

Journal ref: Nano Lett., 2009, 9 (9), pp 3234-3238

Single-electron quantum dot in Si/SiGe with integrated charge-sensing

Authors: C. B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R. H. Blick, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson

Abstract: Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single… ▽ More Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot. △ Less

Submitted 1 November, 2007; v1 submitted 19 October, 2007; originally announced October 2007.

Comments: 3 pages, 3 figures, accepted version, to appear in Applied Physics Letters

Journal ref: Appl Phys Lett (2007) vol. 91 pp. 213103

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

Authors: Nakul Shaji, C. B. Simmons, Madhu Thalakulam, Levente J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, M. Friesen, R. H. Blick, S. N. Coppersmith, M. A. Eriksson

Abstract: Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in… ▽ More Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics. △ Less

Submitted 11 December, 2008; v1 submitted 6 August, 2007; originally announced August 2007.

Comments: Published version. Supplementary Information in appendices

Journal ref: Nature Physics v4, pp540-544 (2008)

Elastically Relaxed Free-standing Strained-Si Nanomembranes

Authors: Michelle M. Roberts, Levente J. Klein, Don E. Savage, Keith A. Slinker, Mark Friesen, George Celler, Mark A. Eriksson, Max G. Lagally

Abstract: Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain, by fabricating membranes in which the final strain stat… ▽ More Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain, by fabricating membranes in which the final strain state is controlled by elastic strain sharing, i.e., without the formation of defects. We grow Si/SiGe layers on a substrate from which they can be released, forming nanomembranes. X-ray diffraction measurements confirm a final strain predicted by elasticity theory. The effec-tiveness of elastic strain to alter electronic properties is demonstrated by low-temperature longi-tudinal-Hall effect measurements on a strained-Si quantum well before and after release. Elastic strain sharing and film transfer offers an intriguing path towards complex, multiple-layer struc-tures in which each layer's properties are controlled elastically, without the introduction of unde-sirable defects. △ Less

Submitted 15 June, 2006; originally announced June 2006.

Comments: 8 pages, published version

Journal ref: Nature Materials v5, p388 (2006)

Electron spin coherence in Si/SiGe quantum wells

Authors: J. L. Truitt, K. A. Slinker, K. L. M. Lewis, D. E. Savage, Charles Tahan, L. J. Klein, Robert Joynt, M. G. Lagally, D. W. van der Weide, S. N. Coppersmith, M. A. Eriksson, A. M. Tyryshkin, J. O. Chu, P. M. Mooney

Abstract: The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measur… ▽ More The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measured from transport experiments. A pronounced dependence of $T_2^*$ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Comments: 4 pages, 4 figures, 1 table

Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

Authors: L. J. Klein, K. A. Slinker, J. L. Truitt, S. Goswami, K. L. M. Lewis, S. N. Coppersmith, D. W. van der Weide, Mark Friesen, R. H. Blick, D. E. Savage, M. G. Lagally, Charles Tahan, Robert Joynt, M. A. Eriksson, J. O. Chu, J. A. Ott, P. M. Mooney

Abstract: We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coul… ▽ More We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV. △ Less

Submitted 20 April, 2004; v1 submitted 16 April, 2004; originally announced April 2004.

Comments: Typos corrected; to appear in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. v84, p4047 (2004)

Practical design and simulation of silicon-based quantum dot qubits

Authors: Mark Friesen, Paul Rugheimer, Donald E. Savage, Max G. Lagally, Daniel W. van der Weide, Robert Joynt, Mark A. Eriksson

Abstract: Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligibl… ▽ More Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage control electronics. This translation is a necessary link between error correction theory and device physics. △ Less

Submitted 6 May, 2003; v1 submitted 1 August, 2002; originally announced August 2002.

Comments: published version

Journal ref: Phys. Rev. B 67, 121301(R) (2003)

Design and proof of concept for silicon-based quantum dot quantum bits

Authors: Mark Friesen, Paul Rugheimer, Donald E. Savage, Max G. Lagally, Daniel W. van der Weide, Robert Joynt, Mark A. Eriksson

Abstract: Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum bit. The novel structure incorporates vertical and lateral tunneling, provides controlled coupling between dots, and enables single electron occupation of each d… ▽ More Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum bit. The novel structure incorporates vertical and lateral tunneling, provides controlled coupling between dots, and enables single electron occupation of each dot. Precise modeling of the design elucidates its potential for scalable quantum computing. For the first time it is possible to translate the requirements of fault-tolerant error correction into specific requirements for gate voltage control electronics in quantum dots. We demonstrate that these requirements are met by existing pulse generators in the kHz-MHz range, but GHz operation is not yet achievable. Our calculations further pinpoint device features that enhance operation speed and robustness against leakage errors. We find that the component technologies for silicon quantum dot quantum computers are already in hand. △ Less

Submitted 10 April, 2002; v1 submitted 1 April, 2002; originally announced April 2002.

Comments: References added

Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy

Authors: B. Garni, Jian Ma, N. Perkins, Jutong Liu, T. F. Kuech, M. G. Lagally

Abstract: We report scanning tunneling microscopy (STM) images of surfaces of GaN films and the observation of luminescence from those films induced by highly spatially localized injection of electrons or holes using STM. This combination of scanning tunneling luminescence (STL) with STM for GaN surfaces and the ability to observe both morphology and luminescence in GaN is the first step to investigate po… ▽ More We report scanning tunneling microscopy (STM) images of surfaces of GaN films and the observation of luminescence from those films induced by highly spatially localized injection of electrons or holes using STM. This combination of scanning tunneling luminescence (STL) with STM for GaN surfaces and the ability to observe both morphology and luminescence in GaN is the first step to investigate possible correlations between surface morphology and optical properties. △ Less

Submitted 14 November, 1995; originally announced November 1995.

Comments: 12 pages, Revtex 3.0, submitted to Appl. Phys. Lett., three figures available from Jian Ma at [email protected]