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Monolithically integrated 940 nm half VCSELs on bulk Ge substrates
Authors:
Yunlong Zhao,
Jia Guo,
Markus Feifel,
Hao-Tien Cheng,
Yun-Cheng Yang,
Lukas Chrostowski,
David Lackner,
Chao-Hsin Wu,
Guangrui,
Xia
Abstract:
High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance spectra comparable to those grown on conventional bulk GaAs wafers and have smooth morphology and reasonable uniformity. These results strongly support full VCSE…
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High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance spectra comparable to those grown on conventional bulk GaAs wafers and have smooth morphology and reasonable uniformity. These results strongly support full VCSEL growth and fabrication on larger-area bulk Ge substrates for the mass production of AlGaAs-based VCSELs.
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Submitted 28 October, 2022;
originally announced October 2022.
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Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates
Authors:
Jia Guo,
Yunlong Zhao,
Markus Feifel,
Hao-tien Cheng,
Yun-cheng Yang,
Lukas Chrostowski,
David Lackner,
Chao-hsin Wu,
Guangrui,
Xia
Abstract:
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than the GaAs DBRs and have double peaks. Transfer matrix meth…
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We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than the GaAs DBRs and have double peaks. Transfer matrix method calculations, surface scratch and polishing tests were conducted, which suggest that the surface cross-hatch was the cause of the inferior DBR reflectance spectra.
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Submitted 4 September, 2022;
originally announced September 2022.
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Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
Authors:
Yunlong Zhao,
Jia Guo,
Markus Feifel,
Hao-tien Cheng,
Yun-cheng Yang,
Liming Wang,
Lukas Chrostowski,
David Lackner,
Chao-hsin Wu,
Guangrui,
Xia
Abstract:
High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bu…
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High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs.
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Submitted 22 December, 2021;
originally announced January 2022.
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Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions
Authors:
Moritz Kölbach,
Ciler Özen,
Oliver Höhn,
David Lackner,
Markus Feifel,
Fatwa F. Abdi,
Matthias M. May
Abstract:
Recently, significant progress in the development of III-V/Si dual-junction solar cells has been achieved. This not only boosts the efficiency of Si-based photovoltaic solar cells, but also offers the possibility of highly efficient green hydrogen production via solar water splitting. Using such dual-junction cells in a highly integrated photoelectrochemical approach and aiming for upscaled device…
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Recently, significant progress in the development of III-V/Si dual-junction solar cells has been achieved. This not only boosts the efficiency of Si-based photovoltaic solar cells, but also offers the possibility of highly efficient green hydrogen production via solar water splitting. Using such dual-junction cells in a highly integrated photoelectrochemical approach and aiming for upscaled devices with solar-to-hydrogen efficiencies beyond 20\%, however, the following frequently neglected contrary effects become relevant: (i) light absorption in the electrolyte layer in front of the top absorber and (ii) the impact of this layer on the ohmic and transport losses. Here, we initially model the influence of the electrolyte layer thickness on the maximum achievable solar-to-hydrogen efficiency of a device with an Si bottom cell and show how the top absorber bandgap has to be adapted to minimise efficiency losses. Then, the contrary effects of increasing ohmic and transport losses with decreasing electrolyte layer thickness are evaluated. This allows us to estimate an optimum electrolyte layer thickness range that counterbalances the effects of parasitic absorption and ohmic/transport losses. We show that fine-tuning of the top absorber bandgap and the water layer thickness can lead to an STH efficiency increase of up to 1\% absolute. Our results allow us to propose important design rules for high-efficiency photoelectrochemical devices based on multi-junction photoabsorbers.
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Submitted 6 September, 2021; v1 submitted 8 August, 2021;
originally announced August 2021.
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Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells
Authors:
R. Lang,
J. Schön,
J. Lefèvre,
B. Boizot,
F. Dimroth,
D. Lackner
Abstract:
Recent developments have renewed the demand for solar cells with increased tolerance to radiation damage. To investigate the specific irradiation damage of 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying In and P contents, a simulation based analysis is employed: by fitting the quantum efficiency and open-circuit voltage simultaneously before and after irradiation, the ind…
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Recent developments have renewed the demand for solar cells with increased tolerance to radiation damage. To investigate the specific irradiation damage of 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying In and P contents, a simulation based analysis is employed: by fitting the quantum efficiency and open-circuit voltage simultaneously before and after irradiation, the induced changes in lifetime are detected. Furthermore, the reduction of irradiation damage during regeneration under typical satellite operating conditions for GEO missions (60°C and AM0 illumination) is investigated. A clear decrease of the radiation damage is observed after post irradiation regeneration. This regeneration effect is stronger for increasing InP-fraction. It is demonstrated that the irradiation induced defect recombination coefficient for irradiation with 1 MeV electrons after regeneration for 216 hours can be described with a linear function of InP-fraction between 1*10$^{-5}$ cm$^2$/s for GaAs and 7*10$^{-7}$ cm$^2$/s for InP. The results show that GaInAsP is a promising material for radiation hard space solar cells.
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Submitted 8 April, 2020; v1 submitted 1 April, 2020;
originally announced April 2020.
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Monolithic Photoelectrochemical Device for 19% Direct Water Splitting
Authors:
Wen-Hui Cheng,
Matthias H. Richter,
Matthias M. May,
Jens Ohlmann,
David Lackner,
Frank Dimroth,
Thomas Hannappel,
Harry A. Atwater,
Hans-Joachim Lewerenz
Abstract:
Recent rapid progress in efficiencies for solar water splitting by photoelectrochemical devices has enhanced its prospects to enable storable renewable energy. Efficient solar fuel generators all use tandem photoelectrode structures, and advanced integrated devices incorporate corrosion protection layers as well as heterogeneous catalysts. Realization of near thermodynamic limiting performance req…
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Recent rapid progress in efficiencies for solar water splitting by photoelectrochemical devices has enhanced its prospects to enable storable renewable energy. Efficient solar fuel generators all use tandem photoelectrode structures, and advanced integrated devices incorporate corrosion protection layers as well as heterogeneous catalysts. Realization of near thermodynamic limiting performance requires tailoring the energy band structure of the photoelectrode and also the optical and electronic properties of the surface layers exposed to the electrolyte. Here, we report a monolithic device architecture that exhibits reduced surface reflectivity in conjunction with metallic Rh nanoparticle catalyst layers that minimize parasitic light absorption. Additionally, the anatase TiO2 protection layer on the photocathode creates a favorable internal band alignment for hydrogen evolution. An initial solar-to-hydrogen efficiency of 19.3 % is obtained in acidic electrolyte and an efficiency of 18.5 % is achieved at neutral pH condition (under simulated sunlight).
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Submitted 5 June, 2017;
originally announced June 2017.
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Efficient Direct Solar-to-Hydrogen Conversion by In Situ Interface Transformation of a Tandem Structure
Authors:
Matthias M. May,
Hans-Joachim Lewerenz,
David Lackner,
Frank Dimroth,
Thomas Hannappel
Abstract:
Photosynthesis is nature's route to convert intermittent solar irradiation into storable energy, while its use for an industrial energy supply is impaired by low efficiency. Artificial photosynthesis provides a promising alternative for efficient robust carbon-neutral renewable energy generation. The approach of direct hydrogen generation by photoelectrochemical water splitting utilises customised…
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Photosynthesis is nature's route to convert intermittent solar irradiation into storable energy, while its use for an industrial energy supply is impaired by low efficiency. Artificial photosynthesis provides a promising alternative for efficient robust carbon-neutral renewable energy generation. The approach of direct hydrogen generation by photoelectrochemical water splitting utilises customised tandem absorber structures to mimic the Z-scheme of natural photosynthesis. Here, a combined chemical surface transformation of a tandem structure and catalyst deposition at ambient temperature yields photocurrents approaching the theoretical limit of the absorber and results in a solar-to-hydrogen efficiency of 14%. The potentiostatically assisted photoelectrode efficiency is 17%. Present benchmarks for integrated systems are clearly exceeded. Details of the in situ interface transformation, the electronic improvement and chemical passivation are presented. The surface functionalisation procedure is widely applicable and can be precisely controlled, allowing further developments of high-efficiency robust hydrogen generators.
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Submitted 7 August, 2015;
originally announced August 2015.
