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Suspended dry pick-up and flip-over assembly for van der Waals heterostructures with ultra-clean surfaces
Authors:
Keda **,
Tobias Wichmann,
Sabine Wenzel,
Tomas Samuely,
Oleksander Onufriienko,
Pavol Szabó,
Kenji Watanabe,
Takashi Taniguchi,
Jiaqiang Yan,
F. Stefan Tautz,
Felix Lüpke,
Markus Ternes,
Jose Martinez-Castro
Abstract:
Van der Waals heterostructures are an excellent platform for studying intriguing interface phenomena, such as moiré and proximity effects. Surface science techniques like scanning tunneling microscopy (STM) have proven a powerful tool to study such heterostructures but have so far been hampered because of their high sensitivity to surface contamination. Here, we report a dry polymer-based assembly…
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Van der Waals heterostructures are an excellent platform for studying intriguing interface phenomena, such as moiré and proximity effects. Surface science techniques like scanning tunneling microscopy (STM) have proven a powerful tool to study such heterostructures but have so far been hampered because of their high sensitivity to surface contamination. Here, we report a dry polymer-based assembly technique to fabricate van der Waals heterostructures with atomically clean surfaces. The key features of our suspended dry pick-up and flip-over technique are 1) the heterostructure surface never comes into contact with polymers, 2) it is entirely solvent-free, 3) it is entirely performed in a glovebox, and 4) it only requires temperatures below 130$^{\circ}$. By performing ambient atomic force microscopy and atomically-resolved scanning tunneling microscopy on example heterostructures, we demonstrate that we can fabricate air-sensitive heterostructures with ultra-clean interfaces and surfaces. Due to the lack of polymer melting, the technique is further compatible with heterostructure assembly under ultra-high vacuum conditions, which promises ultimate heterostructure quality.
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Submitted 17 June, 2023;
originally announced June 2023.
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One-dimensional topological superconductivity in a van der Waals heterostructure
Authors:
Jose Martinez-Castro,
Tobias Wichmann,
Keda **,
Tomas Samuely,
Zhongkui Lyu,
Jiaqiang Yan,
Oleksander Onufriienko,
Pavol Szabó,
F. Stefan Tautz,
Markus Ternes,
Felix Lüpke
Abstract:
One-dimensional (1D) topological superconductivity is a state of matter that is not found in nature. However, it can be realised, for example, by inducing superconductivity into the quantum spin Hall edge state of a two-dimensional topological insulator. Because topological superconductors are proposed to host Majorana zero modes, they have been suggested as a platform for topological quantum comp…
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One-dimensional (1D) topological superconductivity is a state of matter that is not found in nature. However, it can be realised, for example, by inducing superconductivity into the quantum spin Hall edge state of a two-dimensional topological insulator. Because topological superconductors are proposed to host Majorana zero modes, they have been suggested as a platform for topological quantum computing. Yet, conclusive proof of 1D topological superconductivity has remained elusive. Here, we employ low-temperature scanning tunnelling microscopy to show 1D topological superconductivity in a van der Waals heterostructure by directly probing its superconducting properties, instead of relying on the observation of Majorana zero modes at its boundary. We realise this by placing the two-dimensional topological insulator monolayer WTe$_2$ on the superconductor NbSe$_2$. We find that the superconducting topological edge state is robust against magnetic fields, a hallmark of its triplet pairing. Its topological protection is underpinned by a lateral self-proximity effect, which is resilient against disorder in the monolayer edge. By creating this exotic state in a van der Waals heterostructure, we provide an adaptable platform for the future realization of Majorana bound states. Finally, our results more generally demonstrate the power of Abrikosov vortices as effective experimental probes for superconductivity in nanostructures.
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Submitted 17 April, 2023;
originally announced April 2023.
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Anti-site defect-induced disorder in compensated topological magnet MnBi$_{2-x}$Sb$_x$Te$_4$
Authors:
Felix Lüpke,
Marek Kolmer,
Jiaqiang Yan,
Hao Chang,
Paolo Vilmercati,
Hanno H. Weitering,
Wonhee Ko,
An-** Li
Abstract:
The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi$_{2-x}$Sb$_x$Te$_4$ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating states. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and…
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The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi$_{2-x}$Sb$_x$Te$_4$ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating states. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and do** levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with $x=0.64$, by scanning tunneling microscopy/spectroscopy (STM/S). We identify (Bi,Sb)$_{\rm Mn}$ anti-site defects to be the main source of the observed do** fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties.
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Submitted 6 October, 2023; v1 submitted 29 August, 2022;
originally announced August 2022.
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Probing edge state conductance in ultra-thin topological insulator films
Authors:
Arthur Leis,
Michael Schleenvoigt,
Kristof Moors,
Helmut Soltner,
Vasily Cherepanov,
Peter Schüffelgen,
Gregor Mussler,
Detlev Grützmacher,
Bert Voigtländer,
Felix Lüpke,
F. Stefan Tautz
Abstract:
Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge st…
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Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge states in nanoscale spectroscopy, and the detection of ballistic transport in edge channels which typically relies on transport experiments with microscale lithographic contacts. Here, we study few-layer films of the three-dimensional topological insulator (Bi$_{x}$Sb$_{1-x})_2$Te$_3$, for which a topological transition to a two-dimensional topological QSH insulator phase has been proposed. Indeed, an edge state in the local density of states is observed within the band gap. Yet, in nanoscale transport experiments with a four-tip STM, 2 and 3 quintuple layer films do not exhibit a ballistic conductance in the edge channels. This demonstrates that the detection of edge states in spectroscopy can be misleading with regard to the identification of a QSH phase. In contrast, nanoscale multi-tip transport experiments are a robust method for effectively pinpointing ballistic edge channels, as opposed to trivial edge states, in quantum materials.
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Submitted 7 April, 2022;
originally announced April 2022.
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Lifting the spin-momentum locking in ultra-thin topological insulator films
Authors:
Arthur Leis,
Michael Schleenvoigt,
Vasily Cherepanov,
Felix Lüpke,
Peter Schüffelgen,
Gregor Mussler,
Detlev Grützmacher,
Bert Voigtländer,
F. Stefan Tautz
Abstract:
Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological surface states at the top and bottom surfaces results in a topological quantum phase transition, which can lead to the emergence of a quantum spin Hal…
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Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological surface states at the top and bottom surfaces results in a topological quantum phase transition, which can lead to the emergence of a quantum spin Hall phase. Here, we study the thickness-dependent transport properties across the quantum phase transition on the example of (Bi$_{0.16}$Sb$_{0.84}$)$_2$Te$_3$ films, with a four-tip scanning tunnelling microscope. Our findings reveal an exponential drop of the conductivity below the critical thickness. The steepness of this drop indicates the presence of spin-conserving backscattering between the top and bottom surface states, effectively lifting the spin-momentum locking and resulting in the opening of a gap at the Dirac point. Our experiments provide crucial steps towards the detection of quantum spin Hall states in transport measurements.
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Submitted 11 June, 2021;
originally announced June 2021.
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Local manifestations of thickness dependent topology and axion edge state in topological magnet MnBi$_2$Te$_4$
Authors:
Felix Lüpke,
Anh D. Pham,
Yi-Fan Zhao,
Ling-Jie Zhou,
Wenchang Lu,
Emil Briggs,
Jerzy Bernholc,
Marek Kolmer,
Wonhee Ko,
Cui-Zu Chang,
Panchapakesan Ganesh,
An-** Li
Abstract:
The interplay of non-trivial band topology and magnetism gives rise to a series of exotic quantum phenomena, such as the emergent quantum anomalous Hall (QAH) effect and topological magnetoelectric effect. Many of these quantum phenomena have local manifestations when the global symmetry is broken. Here, we report local signatures of the thickness dependent topology in intrinsic magnetic topologic…
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The interplay of non-trivial band topology and magnetism gives rise to a series of exotic quantum phenomena, such as the emergent quantum anomalous Hall (QAH) effect and topological magnetoelectric effect. Many of these quantum phenomena have local manifestations when the global symmetry is broken. Here, we report local signatures of the thickness dependent topology in intrinsic magnetic topological insulator MnBi$_2$Te$_4$(MBT), using scanning tunneling microscopy and spectroscopy on molecular beam epitaxy grown MBT thin films. A thickness-dependent band gap with an oscillatory feature is revealed, which we reproduce with theoretical calculations. Our theoretical results indicate a topological quantum phase transition beyond a film thickness of one monolayer, with alternating QAH and axion insulating states for even and odd layers, respectively. At an even-odd layer step, a localized gapped electronic state is observed, in agreement with an axion insulator edge state that results from a phase transition across the step. The demonstration of thickness-dependent topological properties highlights the role of nanoscale control over novel quantum states, reinforcing the necessity of thin film technology in quantum information science applications.
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Submitted 20 January, 2021;
originally announced January 2021.
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Quantum spin Hall edge states and interlayer coupling in twisted-bilayer WTe$_2$
Authors:
Felix Lüpke,
Dacen Waters,
Anh D. Pham,
Jiaqiang Yan,
David G. Mandrus,
Panchapakesan Ganesh,
Benjamin M. Hunt
Abstract:
The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunne…
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The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe$_2$ which is produce from folded monolayers, as well as, tear-and-stack fabrication. At the tBL bilayer edge, we observe the characteristic spectroscopic signature of the QSH edge state that is absent in topologically trivial as-grown bilayer. For small twist angles, a rectangular moiré pattern develops, which results in local modifications of the band structure. Using first principles calculations, we quantify the interactions in tBL WTe$_2$ and its topological edge states as function of interlayer distance and conclude that it is possible to tune the topology of WTe$_2$ bilayers via the twist angle as well as interlayer interactions.
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Submitted 30 November, 2021; v1 submitted 26 October, 2020;
originally announced October 2020.
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An unexplored MBE growth mode reveals new properties of superconducting NbN
Authors:
John Wright,
Celesta Chang,
Dacen Waters,
Felix Lüpke,
Lucy Raymond,
Rosalyn Koscica,
Guru Khalsa,
Randall Feenstra,
David Muller,
Huili G. Xing,
Debdeep Jena
Abstract:
Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal m…
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Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal metal resistivities as low as 37$μΩ$-cm and superconducting critical temperatures in excess of 15 K. Most remarkably, a reversal of the sign of the Hall coefficient is observed as the NbN films are cooled, and the high material quality allows the first imaging of Abrikosov vortex lattices in this superconductor.
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Submitted 23 December, 2020; v1 submitted 21 August, 2020;
originally announced August 2020.
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Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS$_2$-WSe$_2$ Heterobilayers
Authors:
Dacen Waters,
Yifan Nie,
Felix Lüpke,
Yi Pan,
Stefan Fölsch,
Yu-Chuan Lin,
Bhakti Jariwala,
Kehao Zhang,
Chong Wang,
Hongyan Lv,
Kyeongjae Cho,
Di Xiao,
Joshua A. Robinson,
Randall M. Feenstra
Abstract:
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($θ=0^\circ$), associated with flat bands in the Brillouin zone of the moiré pattern formed due to the lattice mismatch of the two layers. Peaks in the local density of states and confinement in a MoS$_2$/WSe$_2$ system was qualitatively de…
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It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($θ=0^\circ$), associated with flat bands in the Brillouin zone of the moiré pattern formed due to the lattice mismatch of the two layers. Peaks in the local density of states and confinement in a MoS$_2$/WSe$_2$ system was qualitatively described only considering local stacking arrangements, which cause band edge energies to vary spatially. In this work, we report the presence of large in-plane strain variation across the moiré unit cell of a $θ=0^\circ$ MoS$_2$/WSe$_2$ heterobilayer, and show that inclusion of strain variation and out-of-plane displacement in density functional theory calculations greatly improves their agreement with the experimental data. We further explore the role of twist-angle by showing experimental data for a twisted MoS$_2$/WSe$_2$ heterobilayer structure with twist angle of $θ=15^\circ$, that exhibits a moiré pattern but no confinement.
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Submitted 16 April, 2020;
originally announced April 2020.
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Realizing gapped surface states in magnetic topological insulator MnBi$_{2-x}$Sb$_{x}$Te$_{4}$
Authors:
Wonhee Ko,
Marek Kolmer,
Jiaqiang Yan,
Anh D. Pham,
Mingming Fu,
Felix Lüpke,
Satoshi Okamoto,
Zheng Gai,
Panchapakesan Ganesh,
An-** Li
Abstract:
The interplay between magnetism and non-trivial topology in magnetic topological insulators (MTI) is expected to give rise to a variety of exotic topological quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the topological axion states. A key to assessing these novel properties is to tune the Fermi level in the exchange gap of the Dirac surface band. MnBi$_2$Te$_4$ possesses…
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The interplay between magnetism and non-trivial topology in magnetic topological insulators (MTI) is expected to give rise to a variety of exotic topological quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the topological axion states. A key to assessing these novel properties is to tune the Fermi level in the exchange gap of the Dirac surface band. MnBi$_2$Te$_4$ possesses non-trivial band topology with intrinsic antiferromagnetic (AFM) state that can enable all of these quantum states, however, highly electron-doped nature of the MnBi$_2$Te$_4$ crystals obstructs the exhibition of the gapped topological surface states. Here, we tailor the material through Sb-substitution to reveal the gapped surface states in MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ (MBST). By shifting the Fermi level into the bulk band gap of MBST, we access the surface states and show a band gap of 50 meV at the Dirac point from quasi-particle interference (QPI) measured by scanning tunneling microscopy/spectroscopy (STM/STS). Surface-dominant conduction is confirmed below the Néel temperature through transport spectroscopy measured by multiprobe STM. The surface band gap is robust against out-of-plane magnetic field despite the promotion of field-induced ferromagnetism. The realization of bulk-insulating MTI with the large exchange gap offers a promising platform for exploring emergent topological phenomena.
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Submitted 28 February, 2020;
originally announced March 2020.
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Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods
Authors:
Markus Morgenstern,
Christian Pauly,
Jens Kellner,
Marcus Liebmann,
Marco Pratzer,
Gustav Bihlmayer,
Markus Eschbach,
Lukacz Plucinski,
Sebastian Otto,
Bertold Rasche,
Michael Ruck,
Manuel Richter,
Sven Just,
Felix Luepke,
Bert Voigtlaender
Abstract:
We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover no…
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We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover novel types of topological insulators such as dual ones or switchable ones in phase change materials. Moreover, we introduce procedures to spatially map potential fluctuations by scanning tunneling spectroscopy and to identify topological edge states in weak topological insulators.
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Submitted 2 February, 2020;
originally announced February 2020.
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Parasitic conduction channels in topological insulator thin films
Authors:
Sven Just,
Felix Lüpke,
Vasily Cherepanov,
F. Stefan Tautz,
Bert Voigtländer
Abstract:
Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the interior of the not-ideally insulating TI film, the interface layer to the substrate, and the substrate itself. To be able to take advantage of the auspicious transpo…
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Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the interior of the not-ideally insulating TI film, the interface layer to the substrate, and the substrate itself. To be able to take advantage of the auspicious transport properties of the TSS, the influence of the parasitic parallel channels on the total current transport has to be minimized. Because the conductivity of the interior (bulk) of the thin TI film is difficult to access by measurements, we propose here an approach for calculating the mobile charge carrier concentration in the TI film. To this end, we calculate the near-surface band bending using parameters obtained experimentally from surface-sensitive measurements, namely (gate-dependent) four-point resistance measurements and angle-resolved photoelectron spectroscopy (ARPES). While in most cases another parameter in the calculations, i.e. the concentration of unintentional dopants inside the thin TI film, is unknown, it turns out that in the thin-film limit the band bending is largely independent of the dopant concentration in the film. Thus, a well-founded estimate of the total mobile charge carrier concentration and the conductivity of the interior of the thin TI film proves possible. Since the interface and substrate conductivities can be measured by a four-probe conductance measurement prior to the deposition of the TI film, the total contribution of all parasitic channels, and therefore also the contribution of the vitally important TSS, can be determined reliably.
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Submitted 6 April, 2020; v1 submitted 25 August, 2019;
originally announced August 2019.
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Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe$_2$
Authors:
Felix Lüpke,
Dacen Waters,
Sergio C. de la Barrera,
Michael Widom,
David G. Mandrus,
Jiaqiang Yan,
Randall M. Feenstra,
Benjamin M. Hunt
Abstract:
The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present…
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The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present study, we use a novel dry-transfer flip technique to place atomically-thin layers of WTe$_2$ on a van der Waals superconductor, NbSe$_2$. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate atomically clean surfaces and interfaces and the presence of a proximity-induced superconducting gap in the WTe$_2$ for thicknesses from a monolayer up to 7 crystalline layers. At the edge of the WTe$_2$ monolayer, we show that the superconducting gap coexists with the characteristic spectroscopic signature of the QSH edge state. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the QSH edge state in WTe$_2$, a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.
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Submitted 16 July, 2019; v1 submitted 1 March, 2019;
originally announced March 2019.
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Surface structures of tellurium on Si(111)-(7x7) studied by low-energy electron diffraction and scanning tunneling microscopy
Authors:
Felix Lüpke,
Jiří Doležal,
Vasily Cherepanov,
Ivan Ošt'ádal,
F. Stefan Tautz,
Bert Voigtländer
Abstract:
The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)$-$(7$\times$7) surface at room te…
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The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)$-$(7$\times$7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to $770\rm\,K$ results in a weak (7$\times$7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)$-$(7$\times$7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7$\times$7) unit cells. Increasing the substrate temperature further to $920\rm\,K$ leads to a Te/Si(111)$-(2\sqrt3\times2\sqrt{3})\rm R30^{\circ}$ surface reconstruction. We find that this surface configuration has an atomically flat structure with threefold symmetry.
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Submitted 12 October, 2018;
originally announced October 2018.
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Four-point probe measurements using current probes with voltage feedback to measure electric potentials
Authors:
F. Lüpke,
D. Cuma,
S. Korte,
V. Cherepanov,
B. Voigtländer
Abstract:
We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a software feedback loop which adjusts the corresponding tip voltage such that no current flows to the sample. The resulting tip voltage is then equivalent to the sam…
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We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a software feedback loop which adjusts the corresponding tip voltage such that no current flows to the sample. The resulting tip voltage is then equivalent to the sample potential at the tip position. We implement this measurement method into a multi-tip scanning tunneling microscope setup such that potentials can also be measured in tunneling contact, allowing in principle truly non-invasive four-probe measurements. The resulting measurement capabilities are demonstrated for BiSbTe$_3$ and Si$(111)-(7\times7)$ samples.
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Submitted 13 December, 2017; v1 submitted 7 September, 2017;
originally announced September 2017.
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Electrical resistance of individual defects at a topological insulator surface
Authors:
Felix Lüpke,
Markus Eschbach,
Tristan Heider,
Martin Lanius,
Peter Schüffelgen,
Daniel Rosenbach,
Nils von den Driesch,
Vasily Cherepanov,
Gregor Mussler,
Lukasz Plucinski,
Detlev Grützmacher,
Claus M. Schneider,
Bert Voigtländer
Abstract:
Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defect…
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Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. The largest localized voltage drop we find to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared to the other defects.
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Submitted 20 April, 2017;
originally announced April 2017.
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Scanning tunneling potentiometry implemented into a multi-tip setup by software
Authors:
F. Lüpke,
S. Korte,
V. Cherepanov,
B. Voigtländer
Abstract:
We present a multi-tip scanning tunneling potentiometry technique that can be implemented into existing multi-tip scanning tunneling microscopes without hardware changes. The resulting setup allows flexible in situ contacting of samples under UHV conditions and subsequent measurement of the sample topography and local electric potential with resolution down to Å and μV, respectively. The performan…
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We present a multi-tip scanning tunneling potentiometry technique that can be implemented into existing multi-tip scanning tunneling microscopes without hardware changes. The resulting setup allows flexible in situ contacting of samples under UHV conditions and subsequent measurement of the sample topography and local electric potential with resolution down to Å and μV, respectively. The performance of the potentiometry feedback is demonstrated by thermovoltage measurements on the Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ surface by resolving a standing wave pattern. Subsequently, the ability to map the local transport field as a result of a lateral current through the sample surface is shown on Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ and Si$(111)-(7\times7)$ surfaces.
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Submitted 7 December, 2015; v1 submitted 31 August, 2015;
originally announced August 2015.
