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Large Thermoelectricity via Variable Range Hop** in Chemical Vapor Deposition Grown Single-layer MoS2
Authors:
**g Wu,
Hennrik Schmidt,
Amara Kiran Kumar,
Xiangfan Xu,
Goki Eda,
Barbaros Özyilmaz
Abstract:
Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is mo…
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Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is more practical for wafer-scale applications, still remains unexplored. Here, for the first time, we investigate these properties in grown single layer MoS2. Micro-fabricated heaters and thermometers are used to measure both electrical conductivity and thermopower. Large values of up to ~30 mV/K at room temperature are observed, which are much larger than those observed in other two dimensional crystals and bulk MoS2. The thermopower is strongly dependent on temperature and applied gate voltage with a large enhancement at the vicinity of the conduction band edge. We also show that the Seebeck coefficient follows S~T^1/3 suggesting a two-dimensional variable range hop** mechanism in the system, which is consistent with electrical transport measurements. Our results help to understand the physics behind the electrical and thermal transports in MoS2 and the high thermopower value is of interest to future thermoelectronic research and application.
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Submitted 9 July, 2014;
originally announced July 2014.
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Photocarrier relaxation in two-dimensional semiconductors
Authors:
Daichi Kozawa,
Rajeev Kumar,
Alexandra Carvalho,
Amara Kiran Kumar,
Weijie Zhao,
Shunfeng Wang,
Minglin Toh,
Ricardo M. Ribeiro,
A. H. Castro Neto,
Kazunari Matsuda,
Goki Eda
Abstract:
Two-dimensional (2D) crystals of semiconducting transition metal dichalcogenides (TMD) absorb a large fraction of incident photons in the visible frequencies despite being atomically thin. It has been suggested that the strong absorption is due to the parallel band or "band nesting" effect and corresponding divergence in the joint density of states. Here, we show using photoluminescence excitation…
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Two-dimensional (2D) crystals of semiconducting transition metal dichalcogenides (TMD) absorb a large fraction of incident photons in the visible frequencies despite being atomically thin. It has been suggested that the strong absorption is due to the parallel band or "band nesting" effect and corresponding divergence in the joint density of states. Here, we show using photoluminescence excitation spectroscopy that the band nesting in mono- and bilayer MX$_2$ (M = Mo, W and X = S, Se) results in excitation-dependent characteristic relaxation pathways of the photoexcited carriers. Our experimental and simulation results reveal that photoexcited electron-hole pairs in the nesting region spontaneously separate in the $k$-space, relaxing towards immediate band extrema with opposite momentum. These effects imply that the loss of photocarriers due to direct exciton recombination is temporarily suppressed for excitation in resonance with band nesting. Our findings highlight the potential for efficient hot carrier collection using these materials as the absorbers in optoelectronic devices.
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Submitted 3 February, 2014;
originally announced February 2014.
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Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
Authors:
Weijie Zhao,
Zohreh Ghorannevis,
Amara Kiran Kumar,
**g Ren Pang,
Minglin Toh,
Xin Zhang,
Christian Kloc,
** Heng Tan,
Goki Eda
Abstract:
Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence due to interplay between short and long range interactions. Here we report Raman spectra of atomically thin sheets of WS2 and WSe2 in the mono- to few-layer thic…
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Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence due to interplay between short and long range interactions. Here we report Raman spectra of atomically thin sheets of WS2 and WSe2 in the mono- to few-layer thickness regime. We show that, similar to the case of MoS2, the characteristic and modes exhibit stiffening and softening with increasing number of layers, respectively, with a small shift of less than 3 cm-1 due to large mass of the atoms. Thickness dependence is also observed in a series of multiphonon bands arising from overtone, combination, and zone edge phonons, whose intensity exhibit significant enhancement in excitonic resonance conditions. Some of these multiphonon peaks are found to be absent only in monolayers. These features provide a unique fingerprint and rapid identification for monolayer flakes.
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Submitted 4 September, 2013; v1 submitted 3 April, 2013;
originally announced April 2013.
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Stationary Solitons of the Fifth Order KdV-type Equations and their Stabilization
Authors:
B. Dey,
Avinash Khare C. Nagaraja Kumar
Abstract:
Exact stationary soliton solutions of the fifth order KdV type equation $$ u_t +αu^p u_x +βu_{3x}+γu_{5x} = 0$$ are obtained for any p ($>0$) in case $αβ>0$, $Dβ>0$, $βγ<0$ (where D is the soliton velocity), and it is shown that these solutions are unstable with respect to small perturbations in case $p\geq 5$. Various properties of these solutions are discussed. In particular, it is shown that…
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Exact stationary soliton solutions of the fifth order KdV type equation $$ u_t +αu^p u_x +βu_{3x}+γu_{5x} = 0$$ are obtained for any p ($>0$) in case $αβ>0$, $Dβ>0$, $βγ<0$ (where D is the soliton velocity), and it is shown that these solutions are unstable with respect to small perturbations in case $p\geq 5$. Various properties of these solutions are discussed. In particular, it is shown that for any p, these solitons are lower and narrower than the corresponding $γ= 0$ solitons. Finally, for p = 2 we obtain an exact stationary soliton solution even when $D,α,β,γ$ are all $>0$ and discuss its various properties.
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Submitted 19 April, 1996;
originally announced April 1996.
