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Inelastic Light Scattering in the Vicinity of a Single-Atom Quantum Point Contact in a Plasmonic Picocavity
Authors:
Shuyi Liu,
Franco P. Bonafe,
Heiko Appel,
Angel Rubio,
Martin Wolf,
Takashi Kumagai
Abstract:
Here, using low-temperature optical scanning tunneling microscopy (STM), we investigate inelastic light scattering (ILS) in the vicinity of a single-atom quantum point contact (QPC). A vibration mode localized at the single Ag adatom on the Ag(111) surface is resolved in the ILS spectrum, resulting from tip-enhanced Raman scattering (TERS) by the atomically-confined plasmonic field in the STM junc…
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Here, using low-temperature optical scanning tunneling microscopy (STM), we investigate inelastic light scattering (ILS) in the vicinity of a single-atom quantum point contact (QPC). A vibration mode localized at the single Ag adatom on the Ag(111) surface is resolved in the ILS spectrum, resulting from tip-enhanced Raman scattering (TERS) by the atomically-confined plasmonic field in the STM junction. Furthermore, we trace how TERS from the single adatom evolves as a function of the gap distance. The exceptional stability of the low-temperature STM allows to examine distinctly different electron transport regimes of the picocavity, namely in the tunneling and quantum point contact (QPC) regimes. This measurement shows that the vibration mode localized at the adatom and its TERS intensity exhibits a sharp change upon the QPC formation, indicating that the atomic-level structure has a crucial impact on the plasmonic properties. To gain microscopic insights into picocavity optomechanics, we scrutinize the structure and plasmonic field in the STM junction using time-dependent density functional theory. The simulations reveal that atomic-scale structural relaxation at the single-atom QPC results in a discrete change of the plasmonic field strength, volume, and distribution as well as the vibration mode localized at the single atom. These findings give a qualitative explanation for the experimental observations. Furthermore, we demonstrate that strong ILS is a characteristic feature of QPC by continuously forming, breaking, and reforming the atomic contact, and how the plasmonic resonance evolves throughout the non-tunneling, tunneling, and QPC regimes.
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Submitted 11 December, 2023;
originally announced December 2023.
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Atomistically-informed modeling of point defect clustering and evolution in irradiated ThO2
Authors:
Sanjoy Kumar Mazumder,
Maniesha Kaur Salaken Singh,
Tomohisa Kumagai,
Anter El-Azab
Abstract:
A cluster dynamics (CD) model has been developed to investigate the nucleation and growth of point defect clusters, i.e., interstitial prismatic loops and nanoscale and sub-nanoscale voids, in ThO2 during irradiation by energetic particles. The model considers cluster off-stoichiometry due to the asymmetry of point defect generation on the O and Th sublattices under irradiation, as well as the poi…
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A cluster dynamics (CD) model has been developed to investigate the nucleation and growth of point defect clusters, i.e., interstitial prismatic loops and nanoscale and sub-nanoscale voids, in ThO2 during irradiation by energetic particles. The model considers cluster off-stoichiometry due to the asymmetry of point defect generation on the O and Th sublattices under irradiation, as well as the point defect diffusivities and the defect binding energies to clusters. The energies were established using detailed molecular dynamics simulations considering the statistical variability of cluster configuration. A high-order adaptive time-integration has been used to solve the model. The predicted loop density and their average size is in good agreement with reported experimental observations for proton irradiated ThO2 at 600oC. The model did not predict void evolution due to the sluggish kinetics of cation vacancies, explaining the absence of voids in proton irradiated ThO2 (and other oxides) at relatively low temperatures.
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Submitted 13 June, 2022;
originally announced June 2022.
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Femtosecond Thermal and Nonthermal Hot Electron Tunneling inside a Photoexcited Tunnel Junction
Authors:
Natalia Martín Sabanés,
Faruk Krecinic,
Takashi Kumagai,
Fabian Schulz,
Martin Wolf,
Melanie Müller
Abstract:
Efficient operation of electronic nanodevices at ultrafast speeds requires understanding and control of the currents generated by femtosecond bursts of light. Ultrafast laser-induced currents in metallic nanojunctions can originate from photo-assisted hot electron tunneling or lightwave-induced tunneling. Both processes can drive localized photocurrents inside a scanning tunneling microscope (STM)…
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Efficient operation of electronic nanodevices at ultrafast speeds requires understanding and control of the currents generated by femtosecond bursts of light. Ultrafast laser-induced currents in metallic nanojunctions can originate from photo-assisted hot electron tunneling or lightwave-induced tunneling. Both processes can drive localized photocurrents inside a scanning tunneling microscope (STM) on femto- to attosecond time scales, enabling ultrafast STM with atomic spatial resolution. Femtosecond laser excitation of a metallic nanojunction, however, also leads to the formation of a transient thermalized electron distribution, but the tunneling of thermalized hot electrons on time scales faster than electron-lattice equilibration is not well understood. Here, we investigate ultrafast electronic heating and transient thermionic tunneling inside a metallic photoexcited tunnel junction and its role in the generation of ultrafast photocurrents in STM. Phase-resolved sampling of broadband THz pulses via the THz-field-induced modulation of ultrafast photocurrents allows us to probe the electronic temperature evolution inside the STM tip, and to observe the competition between instantaneous and delayed tunneling due to nonthermal and thermal hot electron distributions in real time. Our results reveal the pronounced nonthermal character of photo-induced hot electron tunneling, and provide a detailed microscopic understanding of hot electron dynamics inside a laser-excited tunnel junction.
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Submitted 17 May, 2022;
originally announced May 2022.
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Direct observation of near-field induced resonant electron tunneling in a sub-nanometer plasmonic gap
Authors:
Shuyi Liu,
Martin Wolf,
Takashi Kumagai
Abstract:
Localized surface plasmon resonance (LSPR) excitation of nanostructures and charge transfer in plasmonic nanocavities plays a central role in nanoscale optoelectronics and in applications for plasmonic devices. However, the direct observation of near-filed induced charge transfer has remained as a challenging experiment. Here we present LSPR-assisted resonant electron tunneling from an Ag or Au ti…
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Localized surface plasmon resonance (LSPR) excitation of nanostructures and charge transfer in plasmonic nanocavities plays a central role in nanoscale optoelectronics and in applications for plasmonic devices. However, the direct observation of near-filed induced charge transfer has remained as a challenging experiment. Here we present LSPR-assisted resonant electron tunneling from an Ag or Au tip to the image potential states of a Ag(111) surface using scanning tunneling microscopy (STM). The LSPR-assisted tunneling process results in an incident photon-energy dependent red-shift of the field emission resonances (FERs) in the gap. Using the precise control of the gap distance in the STM junction we demonstrate tuning of the relative contribution from the LSPR-assisted and the normal STM electron tunneling processes. Furthermore, the FER intensity map** of local defects on the surface allows assigning unambiguously the respective FER levels with and without laser excitation.
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Submitted 9 May, 2018;
originally announced May 2018.
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A direct numerical simulation method for complex modulus of particle dispersions
Authors:
T. Iwashita,
T. Kumagai,
R. Yamamoto
Abstract:
We report an extension of the smoothed profile method (SPM)[Y. Nakayama, K. Kim, and R. Yamamoto, Eur. Phys. J. E {\bf 26}, 361(2008)], a direct numerical simulation method for calculating the complex modulus of the dispersion of particles, in which we introduce a temporally oscillatory external force into the system. The validity of the method was examined by evaluating the storage $G'(ω)$ and…
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We report an extension of the smoothed profile method (SPM)[Y. Nakayama, K. Kim, and R. Yamamoto, Eur. Phys. J. E {\bf 26}, 361(2008)], a direct numerical simulation method for calculating the complex modulus of the dispersion of particles, in which we introduce a temporally oscillatory external force into the system. The validity of the method was examined by evaluating the storage $G'(ω)$ and loss $G"(ω)$ moduli of a system composed of identical spherical particles dispersed in an incompressible Newtonian host fluid at volume fractions of $Φ=0$, 0.41, and 0.51. The moduli were evaluated at several frequencies of shear flow; the shear flow used here has a zigzag profile, as is consistent with the usual periodic boundary conditions.
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Submitted 24 April, 2010; v1 submitted 31 August, 2009;
originally announced August 2009.
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Effect of pressure on steplike magnetostriction of single crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayered manganite
Authors:
Y. Yamato,
M. Matsukawa,
T. Kumagai,
R. Suryanarayanan,
S. Nimori,
M. Apostu,
A. Revcolevschi,
K. Koyama,
N. Kobayashi
Abstract:
e report the effect of pressure on the steplike magnetostriction of single crystalline bilayered manganite (LaPr)1.2Sr1.8Mn2O8, for our understandings of the ultrasharp nature of the field-induced first-order transition from a paramagnetic insulator to a ferromagnetic metal phase. The application of pressure suppresses a steplike transformation and causes a broad change in the magnetostriction.…
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e report the effect of pressure on the steplike magnetostriction of single crystalline bilayered manganite (LaPr)1.2Sr1.8Mn2O8, for our understandings of the ultrasharp nature of the field-induced first-order transition from a paramagnetic insulator to a ferromagnetic metal phase. The application of pressure suppresses a steplike transformation and causes a broad change in the magnetostriction. The injection of an electric current to the crystal also weakens the steplike variation in both the magnetostriction and magnetoresistance. The stabilization of ferromagnetic interaction or the delocalization of charge carriers is promoted with the applied pressure or applied current, resulting in the suppressed steplike behavior. Our findings suggest that the step phenomenon is closely related to the existence of localized carriers such as the short-range charge-orbital ordered clusters.
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Submitted 8 September, 2008; v1 submitted 18 June, 2008;
originally announced June 2008.
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Steplike Lattice Deformation of Single Crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ Bilayered Manganite
Authors:
M. Matsukawa,
Y. Yamato,
T. Kumagai,
R. Suryanarayanan,
S. Nimori
Abstract:
We report a steplike lattice transformation of single crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$bilayered manganite accompanied by both magnetization and magnetoresistive jumps, and examine the ultrasharp nature of the field-induced first-order transition from a paramagnetic insulator to a ferromagnetic metal phase accompanied by a huge decrease in resistance. Our findin…
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We report a steplike lattice transformation of single crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$bilayered manganite accompanied by both magnetization and magnetoresistive jumps, and examine the ultrasharp nature of the field-induced first-order transition from a paramagnetic insulator to a ferromagnetic metal phase accompanied by a huge decrease in resistance. Our findings support that the abrupt magnetostriction is closely related to an orbital frustration existing in the inhomogeneous paramagnetic insulating phase rather than a martensitic scenario between competing two phases.
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Submitted 17 May, 2007; v1 submitted 18 December, 2006;
originally announced December 2006.
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Elastic properties of the Non-Fermi liquid metal $Ce Ru_4 Sb_{12}$ and the Dense Kondo semiconductor $Ce Os_4 Sb_{12}$
Authors:
Yoshiki Nakanishi,
Tomoyuki Kumagai,
Masafumi Oikawa,
Tomoaki Tanizawa,
Masahito Yoshizawa,
Hitoshi Sugawara,
Hideyuki Sato
Abstract:
We have investigated the elastic properties of the Ce-based filled skutterudite antimonides CeRu$_{4}$Sb$_{12}$ and CeOs$_{4}$Sb$_{12}$ by means of ultrasonic measurements. CeRu$_{4}$Sb$_{12}$ shows a slight increase around 130 K in the temperature dependence of the elastic constants $C$$_{11}$, ($C$$_{11}$-$C$$_{12}$)/2 and $C$$_{44}$. No apparent softening toward low temperature due to a quadr…
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We have investigated the elastic properties of the Ce-based filled skutterudite antimonides CeRu$_{4}$Sb$_{12}$ and CeOs$_{4}$Sb$_{12}$ by means of ultrasonic measurements. CeRu$_{4}$Sb$_{12}$ shows a slight increase around 130 K in the temperature dependence of the elastic constants $C$$_{11}$, ($C$$_{11}$-$C$$_{12}$)/2 and $C$$_{44}$. No apparent softening toward low temperature due to a quadrupolar response of the 4$f$-electronic ground state of the Ce ion was observed at low temperatures. In contrast CeOs$_{4}$Sb$_{12}$ shows a pronounced elastic softening toward low temperature in the longitudinal $C$$_{11}$ as a function of temperature ($T$) below about 15 K, while a slight elastic softening was observed in the transverse $C$$_{44}$ below about 1.5 K. Furthermore, CeOs$_{4}$Sb$_{12}$ shows a steep decrease around a phase transition temperature of 0.9 K in both $C$$_{11}$ and$ C$$_{44}$. The elastic softening observed in $C$$_{11}$ below about 15 K cannot be explained reasonably only by the crystalline electric field effect. It is most likely to be responsible for the coupling between the elastic strain and the quasiparticle band with a small energy gap in the vicinity of Fermi level. The elastic properties and the 4$f$ ground state of Ce ions in CeRu$_{4}$Sb$_{12}$ and CeOs$_{4}$Sb$_{12}$ are discussed from the viewpoint of the crystalline electric field effect and the band structure in the vicinity of Fermi level.
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Submitted 20 September, 2006;
originally announced September 2006.
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Elastic and magnetic properties on field-induced Metal-Insulator transition of bilayer manganese oxide $(La_{1-z} Pr_z)_{1.2} Sr_{1.8} Mn_2 O_7$ ($z$=0.6)
Authors:
Y. Nakanishi,
K. Shimomura,
T. Kumagai,
M. Matsukawa,
M. Yoshizawa,
M. Apostu,
R. Suryanarayanan,
A. Revcolevschi,
S. Nakamura
Abstract:
The elastic and magnetic properties of a single crystal of 327 bilayer manganese oxide $(La_{1-z} Pr_z)_{1.2} Sr_{1.8} Mn_2 O_7$ with $z$=0.6 have been investigated by ultrasonic and high-field magnetization measurements. A distinct elastic anomaly was observed at low temperatures and in high magnetic fields when crossing the phase boundary. A pronounced elastic softening as a function of magnet…
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The elastic and magnetic properties of a single crystal of 327 bilayer manganese oxide $(La_{1-z} Pr_z)_{1.2} Sr_{1.8} Mn_2 O_7$ with $z$=0.6 have been investigated by ultrasonic and high-field magnetization measurements. A distinct elastic anomaly was observed at low temperatures and in high magnetic fields when crossing the phase boundary. A pronounced elastic softening as a function of magnetic field ($H$) appears across the boundary of the low-temperature magnetic phase below around 40 K, accompanied by a distinct hysteresis. In the high field region, however, these elastic constants exhibit an increase with increasing a magnetic field in the high-field region. The high-field magnetization measurement characterizing the magnetic state clarified a strong connection between elastic strains and magnetic moments. The new metamagnetic transition was found in the high-field region above 40 K, accompanied with no hysteresis. The present results of elastic constants are discussed in terms of a coupling effect between elastic strains associated with sound waves and relevant magnetic moments, and relevant conduction bands. They are explained reasonably in terms of a strong coupling between elastic strains and magnetic susceptibility $chi$$_{m}$=$partial$$M$/$partial$$H$.
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Submitted 20 September, 2006;
originally announced September 2006.
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Anomalous pressure effect on the remanent lattice striction of a (La,Pr)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayered manganite single crystal
Authors:
M. Matsukawa,
A. Tamura,
S. Nimori,
R. Suryanarayanan,
T. Kumagai
Abstract:
We have studied the pressure effect on magnetostriction, both in the $ab$-plane and along the c-axis, of a (La,Pr)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayered manganite single crystal over the temperature region where the field-induced ferromagnetic metal (FMM) transition takes place. For comparison, we have also examined the pressure dependence of magnetization curves at the corresponding temper…
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We have studied the pressure effect on magnetostriction, both in the $ab$-plane and along the c-axis, of a (La,Pr)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayered manganite single crystal over the temperature region where the field-induced ferromagnetic metal (FMM) transition takes place. For comparison, we have also examined the pressure dependence of magnetization curves at the corresponding temperatures. The applied pressure reduces the critical field of the FMM transition and it enhances the remanent magnetostriction. An anomalous pressure effect on the remanent lattice relaxation is observed and is similar to the pressure effect on the remanent magnetization along the c-axis. These findings are understood from the view point that the double-exchange interaction driven FMM state is strengthened by application of pressure.
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Submitted 10 December, 2006; v1 submitted 4 September, 2006;
originally announced September 2006.
