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Superconductivity in Twisted Double Bilayer Graphene Stabilized by WSe$_2$
Authors:
Ruiheng Su,
Manabendra Kuiri,
Kenji Watanabe,
Takashi Taniguchi,
Joshua Folk
Abstract:
Superconductivity has been previously observed in magic-angle twisted stacks of monolayer graphene but conspicuously not in twisted stacks of bilayer graphene, although both systems host topological flat bands and symmetry-broken states. Here, we report the discovery of superconductivity in twisted double bilayer graphene (TDBG) in proximity to WSe$_2$. Samples with twist angles 1.24$^\circ$ and 1…
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Superconductivity has been previously observed in magic-angle twisted stacks of monolayer graphene but conspicuously not in twisted stacks of bilayer graphene, although both systems host topological flat bands and symmetry-broken states. Here, we report the discovery of superconductivity in twisted double bilayer graphene (TDBG) in proximity to WSe$_2$. Samples with twist angles 1.24$^\circ$ and 1.37$^\circ$ superconduct in small pockets of the gate-tuned phase diagram within the valence and conduction band, respectively. Superconductivity emerges from unpolarized states near van Hove singularities and next to regions with broken isospin symmetry, showing the correlation between a high density of states and the emergence of superconductivity in TDBG while revealing a possible role for isospin fluctuations in the pairing.
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Submitted 1 December, 2022; v1 submitted 29 November, 2022;
originally announced November 2022.
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Spontaneous time-reversal symmetry breaking in twisted double bilayer graphene
Authors:
Manabendra Kuiri,
Christopher Coleman,
Zhenxiang Gao,
Aswin Vishnuradhan,
Kenji Watanabe,
Takashi Taniguchi,
Jihang Zhu,
Allan H. MacDonald,
Joshua Folk
Abstract:
Twisted double bilayer graphene (tDBG) comprises two Bernal-stacked bilayer graphene sheets with a twist between them. Gate voltages applied to top and back gates of a tDBG device tune both the flatness and topology of the electronic bands, enabling an unusual level of experimental control. Broken spin/valley symmetry metallic states have been observed in tDBG devices with twist angles $\sim $ 1.2…
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Twisted double bilayer graphene (tDBG) comprises two Bernal-stacked bilayer graphene sheets with a twist between them. Gate voltages applied to top and back gates of a tDBG device tune both the flatness and topology of the electronic bands, enabling an unusual level of experimental control. Broken spin/valley symmetry metallic states have been observed in tDBG devices with twist angles $\sim $ 1.2-1.3$^\circ$, but the topologies and order parameters of these states have remained unclear. We report the observation of an anomalous Hall effect in the correlated metal state of tDBG, with hysteresis loops spanning 100s of mT in out-of-plane magnetic field ($B_{\perp}$) that demonstrate spontaneously broken time-reversal symmetry. The $B_{\perp}$ hysteresis persists for in-plane fields up to several Tesla, suggesting valley (orbital) ferromagnetism. At the same time, the resistivity is strongly affected by even mT-scale values of in-plane magnetic field, pointing to spin-valley coupling or to a direct orbital coupling between in-plane field and the valley degree of freedom.
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Submitted 7 April, 2022;
originally announced April 2022.
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Thickness dependent transition from the 1T$^\prime$ to Weyl semimetal phase in ultrathin MoTe$ _{2} $: Electrical transport, Noise and Raman studies
Authors:
Manabendra Kuiri,
Subhadip Das,
D. V. S. Muthu,
Anindya Das,
A K Sood
Abstract:
Bulk 1T$^\prime$-MoTe$_2$ shows a structural phase transition from 1T$^\prime$ to Weyl semimetallic (WSM) $ T_{d} $ phase at $\sim$ 240 K. This phase transition and transport properties in the two phases have not been investigated on ultra-thin crystals. Here we report electrical transport, $1/f$ noise and Raman studies in ultra-thin 1T$^\prime$-MoTe$_2$ ($\sim$ 5 to 16 nm thick) field-effect tran…
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Bulk 1T$^\prime$-MoTe$_2$ shows a structural phase transition from 1T$^\prime$ to Weyl semimetallic (WSM) $ T_{d} $ phase at $\sim$ 240 K. This phase transition and transport properties in the two phases have not been investigated on ultra-thin crystals. Here we report electrical transport, $1/f$ noise and Raman studies in ultra-thin 1T$^\prime$-MoTe$_2$ ($\sim$ 5 to 16 nm thick) field-effect transistors (FETs) devices as a function of temperature. The electrical resistivities for thickness 16 nm and 11 nm show maxima at temperatures 208 K and 178 K, respectively, making a transition from semiconducting to semi-metallic phase, hitherto not observed in bulk samples. Raman frequencies and linewidths for 11nm thick crystal show change around 178 K, attributed to additional contribution to the phonon self-energy due to enhanced electron-phonon interaction in the WSM phase. Further, the resistivity at low-temperature shows an upturn below 20 K along with the maximum in the power spectral density of the low frequency $1/f$ noise. The latter rules out the metal-insulator transition (MIT) being responsible for the upturn of resistivity below 20 K. The low temperature resistivity follows $ρ\propto 1/T$, changing to $ρ\propto T$ with increasing temperature supports electron-electron interaction physics at electron-hole symmetric Weyl nodes below 20 K. These observations will pave the way to unravel the properties of WSM state in layered ultra-thin van der Waals materials.
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Submitted 3 September, 2021; v1 submitted 1 September, 2021;
originally announced September 2021.
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Enhanced electron-phonon coupling in doubly aligned hexagonal boron nitride bilayer graphene heterostructure
Authors:
Manabendra Kuiri,
Saurabh Kumar Srivastav,
Sujay Ray,
Kenji Watanabe,
Takashi Taniguchi,
Tanmoy Das,
Anindya Das
Abstract:
The relative twist angle in heterostructures of two-dimensional (2D) materials with similar lattice constants result in a dramatic alteration of the electronic properties. Here, we investigate the electrical and magnetotransport properties in bilayer graphene (BLG) encapsulated between two hexagonal boron nitride (hBN) crystals, where the top and bottom hBN are rotationally aligned with bilayer gr…
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The relative twist angle in heterostructures of two-dimensional (2D) materials with similar lattice constants result in a dramatic alteration of the electronic properties. Here, we investigate the electrical and magnetotransport properties in bilayer graphene (BLG) encapsulated between two hexagonal boron nitride (hBN) crystals, where the top and bottom hBN are rotationally aligned with bilayer graphene with a twist angle $θ_t\sim 0^{\circ} \text{and}~ θ_b < 1^{\circ}$, respectively. This results in the formation of two moiré superlattices, with the appearance of satellite resistivity peaks at carrier densities $n_{s1}$ and $n_{s2}$, in both hole and electron doped regions, together with the resistivity peak at zero carrier density. Furthermore, we measure the temperature(T) dependence of the resistivity ($ρ$). The resistivity shows a linear increment with temperature within the range 10K to 50K for the density regime $n_{s1} <n<n_{s2}$ with a large slope d$ρ$/dT $\sim$ 8.5~$Ω$/K. The large slope of d$ρ$/dT is attributed to the enhanced electron-phonon coupling arising due to the suppression of Fermi velocity in the reconstructed minibands, which was theoretically predicted, recently in doubly aligned graphene with top and bottom hBN. Our result establishes the uniqueness of doubly aligned moire system to tune the strength of electron-phonon coupling and to modify the electronic properties of multilayered heterostructures.
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Submitted 30 May, 2021;
originally announced May 2021.
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Energetics of complex phase diagram in a tunable bilayer graphene probed by quantum capacitance
Authors:
Manabendra Kuiri,
Anindya Das
Abstract:
Bilayer graphene provides a unique platform to explore the rich physics in quantum Hall effect. The unusual combination of spin, valley and orbital degeneracy leads to interesting symmetry broken states with electric and magnetic field. Conventional transport measurements like resistance measurements have been performed to probe the different ordered states in bilayer graphene. However, not much w…
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Bilayer graphene provides a unique platform to explore the rich physics in quantum Hall effect. The unusual combination of spin, valley and orbital degeneracy leads to interesting symmetry broken states with electric and magnetic field. Conventional transport measurements like resistance measurements have been performed to probe the different ordered states in bilayer graphene. However, not much work has been done to directly map the energetics of those states in bilayer graphene. Here, we have carried out the magneto capacitance measurements with electric and magnetic field in a hexagonal boron nitride encapsulated dual gated bilayer graphene device. At zero magnetic field, using the quantum capacitance technique we measure the gap around the charge neutrality point as a function of perpendicular electric field and the obtained value of the gap matches well with the theory. In presence of perpendicular magnetic field, we observe Landau level crossing in our magneto-capacitance measurements with electric field. The gap closing and reopening of the lowest Landau level with electric and magnetic field shows the transition from one ordered state to another one. Further more we observe the collapsing of the Landau levels near the band edge at higher electric field ($\bar D > 0.5$ V/nm), which was predicted theoretically. The complete energetics of the Landau levels of bilayer graphene with electric and magnetic field in our experiment paves the way to unravel the nature of ground states of the system.
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Submitted 25 October, 2018;
originally announced October 2018.
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Large Landau level splitting with tunable one-dimensional graphene superlattice probed by magneto capacitance measurements
Authors:
Manabendra Kuiri,
Gaurav Kumar Gupta,
Yuval Ronen,
Tanmoy Das,
Anindya Das
Abstract:
The unique zero energy Landau Level of graphene has a particle-hole symmetry in the bulk, which is lifted at the boundary leading to a splitting into two chiral edge modes. It has long been theoretically predicted that the splitting of the zero-energy Landau level inside the {\it bulk} can lead to many interesting physics, such as quantum spin Hall effect, Dirac like singular points of the chiral…
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The unique zero energy Landau Level of graphene has a particle-hole symmetry in the bulk, which is lifted at the boundary leading to a splitting into two chiral edge modes. It has long been theoretically predicted that the splitting of the zero-energy Landau level inside the {\it bulk} can lead to many interesting physics, such as quantum spin Hall effect, Dirac like singular points of the chiral edge modes, and others. However, so far the obtained splitting with high-magnetic field even on a hBN substrate are not amenable to experimental detection, and functionality. Guided by theoretical calculations, here we produce a large gap zero-energy Landau level splitting ($\sim$ 150 meV) with the usage of a one-dimensional (1D) superlattice potential. We have created tunable 1D superlattice in a hBN encapsulated graphene device using an array of metal gates with a period of $\sim$ 100 nm. The Landau level spectrum is visualized by measuring magneto capacitance spectroscopy. We monitor the splitting of the zeroth Landau level as a function of superlattice potential. The observed splitting energy is an order higher in magnitude compared to the previous studies of splitting due to the symmetry breaking in pristine graphene. The origin of such large Landau level spitting in 1D potential is explained with a degenerate perturbation theory. We find that owing to the periodic potential, the Landau level becomes dispersive, and acquires sharp peaks at the tunable band edges. Our study will pave the way to create the tunable 1D periodic structure for multi-functionalization and device application like graphene electronic circuits from appropriately engineered periodic patterns in near future.
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Submitted 20 January, 2018;
originally announced January 2018.
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Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions
Authors:
Chandan Kumar,
Manabendra Kuiri,
Anindya Das
Abstract:
We report an observation of conductance fuctuations (CFs) in the bipolar regime of quantum hall (QH) plateaus in graphene (p-n-p/n-p-n) devices. The CFs in the bipolar regime are shown to decrease with increasing bias and temperature. At high temperature (above 7 K) the CFs vanishes completely and the flat quantized plateaus are recovered in the bipolar regime. The values of QH plateaus are in the…
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We report an observation of conductance fuctuations (CFs) in the bipolar regime of quantum hall (QH) plateaus in graphene (p-n-p/n-p-n) devices. The CFs in the bipolar regime are shown to decrease with increasing bias and temperature. At high temperature (above 7 K) the CFs vanishes completely and the flat quantized plateaus are recovered in the bipolar regime. The values of QH plateaus are in theoretical agreement based on full equilibration of chiral channels at the p-n junction. The amplitude of CFs for different filling factors follows a trend predicted by the random matrix theory. Although, there are mismatch in the values of CFs between the experiment and theory but at higher filling factors the experimental values become closer to the theoretical prediction. The suppression of CFs and its dependence has been understood in terms of time dependent disorders present at the p-n junctions.
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Submitted 22 November, 2017; v1 submitted 21 November, 2017;
originally announced November 2017.
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Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor
Authors:
Biswanath Chakraborty,
Satyendra Nath Gupta,
Anjali Singh,
Manabendra Kuiri,
Chandan Kumar,
D. V. S. Muthu,
Anindya Das,
U. V. Waghmare,
A. K. Sood
Abstract:
Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with A$_g$ symmetry depend much more strongly on concentration of electrons than that of holes, while the phonons with B$_g$ symmetry are insensitive to do**. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises…
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Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with A$_g$ symmetry depend much more strongly on concentration of electrons than that of holes, while the phonons with B$_g$ symmetry are insensitive to do**. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving $π$ and $σ$ bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.
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Submitted 9 March, 2016;
originally announced March 2016.
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Probing 2D Black Phosphorus by Quantum Capacitance Measurements
Authors:
Manabendra Kuiri,
Chandan Kumar,
Biswanath Chakraborty,
Satyendra N Gupta,
Mit H. Naik,
Manish Jain,
A. K. Sood,
Anindya Das
Abstract:
Two-dimensional materials and their heterostructures have emerged as a new class of materials for not only fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in plane anisotropy makes BP a unique material to make conceptually new type of electronic devices. However, the global densit…
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Two-dimensional materials and their heterostructures have emerged as a new class of materials for not only fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in plane anisotropy makes BP a unique material to make conceptually new type of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here we report the quantum capacitance measurements together with conductance measurements on a hBN protected few layer BP ($\sim$ 6 layer) in a dual gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with the density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hop** seen in our temperature-dependence conductivity. A large asymmetry is observed between the electron and hole side. The asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in the conductance measurements.
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Submitted 30 October, 2015;
originally announced October 2015.
