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SQUID current sensors with an integrated thermally actuated input current limiter
Authors:
Rainer Körber,
Patryk Krzysteczko,
Monique Klemm,
Tianhao Liu,
Jan-Hendrik Storm,
Jörn Beyer
Abstract:
The development of SQUID current sensors with a thermally actuated input current limiter (TCL) integrated into the input circuit of the sensor is presented. The TCL is based on an unshunted Josephson Junction (JJ) series array, around which meanders a galvanically isolated, but tightly, thermally coupled, resistive heater element. By applying a current to the heater, the JJ critical currents can b…
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The development of SQUID current sensors with a thermally actuated input current limiter (TCL) integrated into the input circuit of the sensor is presented. The TCL is based on an unshunted Josephson Junction (JJ) series array, around which meanders a galvanically isolated, but tightly, thermally coupled, resistive heater element. By applying a current to the heater, the JJ critical currents can be reduced or completely suppressed, while the other on-chip SQUID circuit elements remain unaffected. The functional parameters of the TCL are determined by direct transport measurements and by static and dynamic flux coupling tests via the input circuit. In liquid Helium, a heater power, which reliably suppresses the critical current of the JJ array to zero, of $\sim$1.5 mW was needed, with the TCL normal state resistance being at 500 $Ω$. In this configuration, typical TCL switching times below 10 $μ$s were observed in the direct transport measurements.
The TCL can be used to temporarily or even permanently disable malfunctioning channels in multichannel SQUID magnetometer systems, when feedback into their otherwise superconducting input circuits is not possible. In doing so, significant signal distortions in neighbouring channels from screening currents in these input circuits are avoided. Furthermore, by completely suppressing and restoring the TCL critical current, dc offset currents in the superconducting input circuits can be prevented. This is relevant, for instance, in SQUID-based spin precession experiments on hyperpolarized noble gases, in which even dc currents of a few $μ$A in the input circuit can lead to significant magnetic field distortions in the adjacent sample region contributing to the transverse spin-spin relaxation rate $1/T_{2}$
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Submitted 27 February, 2023;
originally announced February 2023.
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MnSi-nanostructures obtained from thin films: magnetotransport and Hall effect
Authors:
D. Schroeter,
N. Steinki,
M. Schilling,
A. Fernández Scarioni,
P. Krzysteczko,
T. Dziomba,
H. W. Schumacher,
D. Menzel,
S. Süllow
Abstract:
We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic a…
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We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic phase.
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Submitted 5 February, 2018; v1 submitted 13 June, 2017;
originally announced June 2017.
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Nano scale thermo-electrical detection of magnetic domain wall propagation
Authors:
Patryk Krzysteczko,
James Wells,
Alexander Fernandez Scarioni,
Zbynek Soban,
Tomas Janda,
Xiukun Hu,
Vit Saidl,
Richard P. Campion,
Rhodri Mansell,
Ji-Hyun Lee,
Russell P. Cowburn,
Petr Nemec,
Olga Kazakova,
Joerg Wunderlich,
Hans Werner Schumacher
Abstract:
In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition…
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In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition speed, or can only be applied on specific materials. Here, we show that the anomalous Nernst effect provides a simple and powerful tool to precisely track the position and motion of a single DW propagating in a PMA nanowire. We detect field and current driven DW propagation in both metallic heterostructures and dilute magnetic semiconductors over a broad temperature range. The demonstrated spatial resolution below 20 nm is comparable to the DW width in typical metallic PMA systems.
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Submitted 23 November, 2016;
originally announced November 2016.
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Domain wall magneto-Seebeck effect
Authors:
Patryk Krzysteczko,
Xiukun Hu,
Niklas Liebing,
Sibylle Sievers,
Hans W. Schumacher
Abstract:
The interplay between charge, spin, and heat currents in magnetic nano systems subjected to a temperature gradient has lead to a variety of novel effects and promising applications studied in the fast-growing field of spincaloritronics. Here we explore the magnetothermoelectrical properties of an individual magnetic domain wall in a permalloy nanowire. In thermal gradients of the order of few Kelv…
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The interplay between charge, spin, and heat currents in magnetic nano systems subjected to a temperature gradient has lead to a variety of novel effects and promising applications studied in the fast-growing field of spincaloritronics. Here we explore the magnetothermoelectrical properties of an individual magnetic domain wall in a permalloy nanowire. In thermal gradients of the order of few Kelvin per micrometer along the long wire axis, we find a clear magneto-Seebeck signature due to the presence of a single domain wall. The observed domain wall magneto-Seebeck effect can be explained by the magnetization-dependent Seebeck coefficient of permalloy in combination with the local spin configuration of the domain wall.
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Submitted 29 December, 2014;
originally announced December 2014.
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Magneto-thermoelectric figure of merit of Co/Cu multilayers
Authors:
X. K. Hu,
P. Krzysteczko,
N. Liebing,
S. Serrano-Guisan,
K. Rott,
G. Reiss,
J. Kimling,
T. Böhnert,
K. Nielsch,
H. W. Schumacher
Abstract:
The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the t…
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The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the thermoelectric power factor. The Seebeck coefficient reaches values up to -18 microvolt/K at room temperature and shows a magnetic field dependence up to 28.6 % upon spin reversal. In combination with thermal conductivity data of the same Co/Cu stack, we find a spin dependence of the thermoelectric figure of merit of up to 65 %. Furthermore, a spin dependence of the power factor of up to 110 % is derived.
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Submitted 13 November, 2013;
originally announced November 2013.
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Tunneling magneto thermocurrent in CoFeB/MgO/CoFeB based magnetic tunnel junctions
Authors:
Niklas Liebing,
Santiago Serrano-Guisan,
Patryk Krzysteczko,
Karsten Rott,
Günter Reiss,
Jürgen Langer,
Berthold Ocker,
Hans Werner Schumacher
Abstract:
We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from parallel to antiparallel the thermopower increases by up to 55% where as the therm…
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We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from parallel to antiparallel the thermopower increases by up to 55% where as the thermocurrent drops by 45%. These observations can be well explained by the Onsager relations taking into account the tunneling magneto resistance of the MTJ. These findings contrast previous studies on AlO based MTJ systems, revealing tunneling magneto thermo power but no tunneling magneto thermocurrent.
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Submitted 17 April, 2013;
originally announced April 2013.
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Memristive switching of MgO based magnetic tunnel junctions
Authors:
P. Krzysteczko,
G. Reiss,
A. Thomas
Abstract:
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state, multiple resistive sates are created depending on the bias history which provides a method for multi-bit data storage and logic. The electroni…
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Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state, multiple resistive sates are created depending on the bias history which provides a method for multi-bit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism.
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Submitted 21 July, 2009;
originally announced July 2009.
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Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers
Authors:
Patryk Krzysteczko,
Xinli Kou,
Karsten Rott,
Andy Thomas,
Günter Reiss
Abstract:
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down to 4.4 ohm micrometer squared. If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes d…
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Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down to 4.4 ohm micrometer squared. If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.
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Submitted 28 July, 2008;
originally announced July 2008.
