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Fermi level depinning via insertion of a graphene buffer layer at the gold-2D tin monoxide contact
Authors:
Yujia Tian,
Devesh R. Kripalani,
Ming Xue,
Kun Zhou
Abstract:
Two-dimensional (2D) tin monoxide (SnO) has attracted much attention owing to its distinctive electronic and optical properties, which render itself suitable as a channel material in field effect transistors (FETs). However, upon contact with metals for such applications, the Fermi level pinning effect may occur, where states are induced in its band gap by the metal, hindering its intrinsic semico…
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Two-dimensional (2D) tin monoxide (SnO) has attracted much attention owing to its distinctive electronic and optical properties, which render itself suitable as a channel material in field effect transistors (FETs). However, upon contact with metals for such applications, the Fermi level pinning effect may occur, where states are induced in its band gap by the metal, hindering its intrinsic semiconducting properties. We propose the insertion of graphene at the contact interface to alleviate the metal-induced gap states. By using gold (Au) as the electrode material and monolayer SnO (mSnO) as the channel material, the geometry, bonding strength, charge transfer and tunnel barriers of charges, and electronic properties including the work function, band structure, density of states, and Schottky barriers are thoroughly investigated using first-principles calculations for the structures with and without graphene to reveal the contact behaviours and Fermi level depinning mechanism. It has been demonstrated that strong covalent bonding is formed between gold and mSnO, while the graphene interlayer forms weak van der Waals interaction with both materials, which minimises the perturbance to the band structure of mSnO. The effects of out-of-plane compression are also analysed to assess the performance of the contact under mechanical deformation, and a feasible fabrication route for the heterostructure with graphene is proposed. This work systematically explores the properties of the Au-mSnO contact for applications in FETs and provides thorough guidance for future exploitation of 2D materials in various electronic applications and for selection of buffer layers to improve metal-semiconductor contact.
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Submitted 30 August, 2023;
originally announced August 2023.
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Abnormal behavior of preferred formation of cationic vacancy from the interior in γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state
Authors:
Changmeng Huan,
Yongqing Cai,
Devesh R. Kripalani,
Kun Zhou,
Qingqing Ke
Abstract:
Two-dimensional (2D) materials tend to have the preferably formation of vacancies at the outer surface. Here, contrary to the normal notion, we reveal a type of vacancy that thermodynamically initiates from the interior part of the 2D backbone of germanium selenide (γ-GeSe). Interestingly, the Ge-vacancy (VGe) in the interior part of γ-GeSe possesses the lowest formation energy amongst the various…
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Two-dimensional (2D) materials tend to have the preferably formation of vacancies at the outer surface. Here, contrary to the normal notion, we reveal a type of vacancy that thermodynamically initiates from the interior part of the 2D backbone of germanium selenide (γ-GeSe). Interestingly, the Ge-vacancy (VGe) in the interior part of γ-GeSe possesses the lowest formation energy amongst the various types of defects considered. We also find a low diffusion barrier (1.04 eV) of VGe which is a half of those of sulfur vacancy in MoS2. The facile formation of mobile VGe is rooted in the antibonding coupling of the lone-pair Ge 4s and Se 4p states near the valence band maximum, which also exists in other gamma-phase MX (M=Sn, Ge; X=S, Te). The VGe is accompanied by a shallow acceptor level in the band gap and induces strong infrared light absorption and p-type conductivity. The VGe located in the middle cationic Ge sublattice is well protected by the surface Se layers-a feature that is absent in other atomically thin materials. Our work suggests that the unique well-buried inner VGe, with the potential of forming structurally protected ultrathin conducting filaments, may render the GeSe layer an ideal platform for quantum emitting, memristive, and neuromorphic applications.
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Submitted 28 August, 2023;
originally announced August 2023.
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Phonon anharmonicity and thermal conductivity of two-dimensional van der Waals materials: A review
Authors:
Xuefei Yan,
Bowen Wang,
Yulong Hai,
Devesh R. Kripalani,
Qingqing Ke,
Yongqing Cai
Abstract:
Two-dimensional (2D) van der Waals (vdW) materials have extraordinary thermal properties due to the effect of quantum confinement, making them promising for thermoelectric energy conversion and thermal management in microelectronic devices. In this review, the mechanism of phonon anharmonicity originating from three- and four-phonon interactions is derived. The phonon anharmonicity of 2D vdW mater…
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Two-dimensional (2D) van der Waals (vdW) materials have extraordinary thermal properties due to the effect of quantum confinement, making them promising for thermoelectric energy conversion and thermal management in microelectronic devices. In this review, the mechanism of phonon anharmonicity originating from three- and four-phonon interactions is derived. The phonon anharmonicity of 2D vdW materials, involving the Grüneisen parameter, phonon lifetime, and thermal conductivity, is summarized and derived in detail. The size-dependent thermal conductivity of representative 2D vdW materials is discussed experimentally and theoretically. This review will present fundamental and advanced knowledge on how to evaluate the phonon anharmonicity in 2D vdW materials, which will aid the design of new structures and materials for applications related to energy transfer and conversion.
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Submitted 16 October, 2022;
originally announced October 2022.
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Strong Edge Stress in Molecularly Thin Organic$-$Inorganic Hybrid Ruddlesden$-$Popper Perovskites and Modulations of Their Edge Electronic Properties
Authors:
Devesh R. Kripalani,
Yongqing Cai,
Jun Lou,
Kun Zhou
Abstract:
Organic$-$inorganic hybrid Ruddlesden$-$Popper perovskites (HRPPs) have gained much attention for optoelectronic applications due to their high moisture resistance, good processibility under ambient conditions, and long functional lifetimes. Recent success in isolating molecularly thin hybrid perovskite nanosheets and their intriguing edge phenomena have raised the need for understanding the role…
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Organic$-$inorganic hybrid Ruddlesden$-$Popper perovskites (HRPPs) have gained much attention for optoelectronic applications due to their high moisture resistance, good processibility under ambient conditions, and long functional lifetimes. Recent success in isolating molecularly thin hybrid perovskite nanosheets and their intriguing edge phenomena have raised the need for understanding the role of edges and the properties that dictate their fundamental behaviours. In this work, we perform a prototypical study on the edge effects in ultrathin hybrid perovskites by considering monolayer (BA)$_2$PbI$_4$ as a representative system. Based on first-principles simulations of nanoribbon models, we show that in addition to significant distortions of the octahedra network at the edges, strong edge stresses are also present in the material. Structural instabilities that arise from the edge stress could drive the relaxation process and dominate the morphological response of edges in practice. A clear downward shift of the bands at the narrower ribbons, as indicative of the edge effect, facilitates the separation of photo-excited carriers (electrons move towards the edge and holes move towards the interior part of the nanosheet). Moreover, the desorption energy of the organic molecule can also be much lower at the free edges, making it easier for functionalization and/or substitution events to take place. The findings reported in this work elucidate the underlying mechanisms responsible for edge states in HRPPs and will be important in guiding the rational design and development of high-performance layer$-$edge devices.
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Submitted 1 February, 2022;
originally announced February 2022.
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Highly stable electronic properties of rippled antimonene under compressive deformation
Authors:
Yujia Tian,
Devesh R. Kripalani,
Ming Xue,
Shaofan Li,
Kun Zhou
Abstract:
Antimonene has attracted much attention for its high carrier mobility and suitable band gap for electronic, optoelectronic, and even spintronic devices. To tailor its properties for such applications, strain engineering may be adopted. However, such 2D crystals may prefer to exist in the rippled form due to the instability of long-range orders, and rippling has been shown to have a contrasting, si…
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Antimonene has attracted much attention for its high carrier mobility and suitable band gap for electronic, optoelectronic, and even spintronic devices. To tailor its properties for such applications, strain engineering may be adopted. However, such 2D crystals may prefer to exist in the rippled form due to the instability of long-range orders, and rippling has been shown to have a contrasting, significant impact on the electronic properties of various 2D materials, which complicates the tuning process. Hence, the effects of rippling on the electronic properties of antimonene under strain are herein investigated by comparing antimonene in its rippled and flat forms. DFT calculations are performed to compute the structural and electronic parameters, where uniaxial compression of up to 7.5% is applied along the armchair and zigzag directions to study the anisotropic behavior of the material. Highly stable properties such as the work function and band gap are obtained for the rippled structures, where they are fully relaxed, regardless of the compression level, and these properties do not deviate much from those of the pristine structure under no strain. In contrast, various changes are observed in their flat counterparts. The mechanisms behind the different results are thoroughly explained by analyses of the density of states and structure geometry. The out-of-plane dipole moments of the rippled structures are also presented to give further insights into potential applications of rippled antimonene in sensors, actuators, triboelectric nanogenerators, etc. This work presents extensive data and thorough analysis on the effect of rippling on antimonene. The identification of optimal ripple amplitudes for which the electronic properties of the pristine condition can be recovered will be highly significant in guiding the rational design and architecture of antimonene-based devices.
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Submitted 9 March, 2023; v1 submitted 26 January, 2022;
originally announced January 2022.
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Vacancies and dopants in two-dimensional tin monoxide: An ab initio study
Authors:
Devesh R. Kripalani,
**-** Sun,
Pamela Lin,
Ming Xue,
Kun Zhou
Abstract:
Layered tin monoxide (SnO) offers an exciting two-dimensional (2D) semiconducting system with great technological potential for next-generation electronics and photocatalytic applications. Using a combination of first-principles simulations and strain field analysis, this study investigates the structural dynamics of oxygen (O) vacancies in monolayer SnO and their functionalization by complementar…
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Layered tin monoxide (SnO) offers an exciting two-dimensional (2D) semiconducting system with great technological potential for next-generation electronics and photocatalytic applications. Using a combination of first-principles simulations and strain field analysis, this study investigates the structural dynamics of oxygen (O) vacancies in monolayer SnO and their functionalization by complementary lightweight dopants, namely C, Si, N, P, S, F, Cl, H and H$_{2}$. Our results show that O vacancies are the dominant native defect under Sn-rich growth conditions with active diffusion characteristics that are comparable to that of graphene vacancies. Depending on the choice of substitutional species and its concentration within the material, significant opportunities are revealed in the doped-SnO system for facilitating $n$/$p$-type tendencies, work function reduction, and metallization of the monolayer. N and F dopants are found to demonstrate superior mechanical compatibility with the host lattice, with F being especially likely to take part in substitution and lead to degenerately doped phases with high open-air stability. The findings reported here suggest that post-growth filling of O vacancies in Sn-rich conditions presents a viable channel for do** 2D tin monoxide, opening up new avenues in harnessing defect-engineered SnO nanostructures for emergent technologies.
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Submitted 19 November, 2020;
originally announced November 2020.
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Metastable Interlayer Frenkel Pair Defects by Dipole-like Strain Fields for Dimensional Distortion in Black Phosphorus
Authors:
Devesh R. Kripalani,
Yongqing Cai,
Ming Xue,
Kun Zhou
Abstract:
The low formation energy of atomic vacancies in black phosphorus allows it to serve as an ideal prototypical system for exploring the dynamics of interlayer interstitial-vacancy (I-V) pairs (i.e. Frenkel defects) which account for Wigner energy release. Based on a few-layer model of black phosphorus, we conduct discrete geometry analysis and investigate the structural dynamics of intimate interlay…
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The low formation energy of atomic vacancies in black phosphorus allows it to serve as an ideal prototypical system for exploring the dynamics of interlayer interstitial-vacancy (I-V) pairs (i.e. Frenkel defects) which account for Wigner energy release. Based on a few-layer model of black phosphorus, we conduct discrete geometry analysis and investigate the structural dynamics of intimate interlayer Frenkel pairs from first-principles calculations. We reveal a highly metastable I-V pair state driven by anisotropic dipole-like strain fields which can build strong connections between neighbouring layers. In the 2D limit (monolayer), the intimate I-V pair exhibits a relatively low formation energy of 1.54 eV and is energetically favoured over its isolated constituents by up to 1.68 eV. The barrier for annihilation of the Frenkel pair is 1.46 eV in the bilayer, which is remarkably higher than that of similar defects in graphite. The findings reported in this work suggest that there exist rich bridging pathways in black phosphorus, leading to stable dimensional reduction and structural condensation on exposure to moderate electron excitation or thermal annealing. This study paves the way for creating novel dimensional-hybrid polymorphs of phosphorus via the introduction of such metastable interlayer I-V pair defects.
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Submitted 1 December, 2019;
originally announced December 2019.
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Strain-driven superplasticity and modulation of electronic properties of ultrathin tin (II) oxide: A first-principles study
Authors:
Devesh R. Kripalani,
**-** Sun,
Pamela Lin,
Ming Xue,
Kun Zhou
Abstract:
2D-layered tin (II) oxide (SnO) has recently emerged as a promising bipolar channel material for thin-film transistors and complementary metal-oxide-semiconductor devices. In this work, we present a first-principles investigation of the mechanical properties of ultrathin SnO, as well as the electronic implications of tensile strain ($ε$) under both uniaxial and biaxial conditions. Bulk-to-monolaye…
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2D-layered tin (II) oxide (SnO) has recently emerged as a promising bipolar channel material for thin-film transistors and complementary metal-oxide-semiconductor devices. In this work, we present a first-principles investigation of the mechanical properties of ultrathin SnO, as well as the electronic implications of tensile strain ($ε$) under both uniaxial and biaxial conditions. Bulk-to-monolayer transition is found to significantly lower the Young's and shear moduli of SnO, highlighting the importance of interlayer Sn-Sn bonds in preserving structural integrity. Unprecedentedly, few-layer SnO exhibits superplasticity under uniaxial deformation conditions, with a critical strain to failure of up to 74% in the monolayer. Such superplastic behavior is ascribed to the formation of a tri-coordinated intermediate (referred to here as h-SnO) beyond $ε$ = 14%, which resembles a partially-recovered orthorhombic phase with relatively large work function and wide indirect band gap. The broad structural range of tin (II) oxide under strongly anisotropic mechanical loading suggests intriguing possibilities for realizing novel hybrid nanostructures of SnO through strain engineering. The findings reported in this study reveal fundamental insights into the mechanical behavior and strain-driven electronic properties of tin (II) oxide, opening up exciting avenues for the development of SnO-based nanoelectronic devices with new, non-conventional functionalities.
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Submitted 10 November, 2019;
originally announced November 2019.
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Strain Engineering of Antimonene by a First-principles Study: Mechanical and Electronic Properties
Authors:
Devesh R. Kripalani,
Andrey A. Kistanov,
Yongqing Cai,
Ming Xue,
Kun Zhou
Abstract:
In this work, we investigate the mechanical and electronic properties of monolayer antimonene in its most stable beta-phase using first-principles calculations. The upper region of its valence band is found to solely consist of lone pair p-orbital states, which are by nature more delocalized than the d-orbital states in transition metal dichalcogenides, implying superior transport performance of a…
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In this work, we investigate the mechanical and electronic properties of monolayer antimonene in its most stable beta-phase using first-principles calculations. The upper region of its valence band is found to solely consist of lone pair p-orbital states, which are by nature more delocalized than the d-orbital states in transition metal dichalcogenides, implying superior transport performance of antimonene. The Young's and shear moduli of beta-antimonene are observed to be ~25% higher than those of bulk antimony, while the hexagonal lattice constant of the monolayer reduces significantly (~5%) from that in bulk, indicative of strong inter-layer coupling. The ideal tensile test of beta-antimonene under applied uniaxial strain highlights ideal strengths of 6 GPa and 8 GPa, corresponding to critical strains of 15% and 17% in the zigzag and armchair directions, respectively. During the deformation process, the structural integrity of the material is shown to be better preserved, albeit moderately, in the armchair direction. Interestingly, the application of uniaxial strain in the zigzag and armchair directions unveil direction-dependent trends in the electronic band structure. We find that the nature of the band gap remains insensitive to strain in the zigzag direction, while strain in the armchair direction activates an indirect-direct band gap transition at a critical strain of 4%, owing to a band switching mechanism. The curvature of the conduction band minimum increases during the transition, which suggests a lighter effective mass of electrons in the direct-gap configuration than in the free-standing state of equilibrium. The work function of free-standing beta-antimonene is 4.59 eV and it attains a maximum value of 5.07 eV under an applied biaxial strain of 4%.
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Submitted 17 July, 2018;
originally announced July 2018.
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A First-Principles Study on the Adsorption of Small Molecules on Antimonene: Oxidation Tendency and Stability
Authors:
Andrey A. Kistanov,
Yongqing Cai,
Devesh R. Kripalani,
Kun Zhou,
Sergey V. Dmitriev,
Yong-Wei Zhang
Abstract:
Antimonene, a new group-VA 2D semiconducting material beyond phosphorene, was recently synthesized through various approaches and was shown to exhibit a good structural integrity in ambient conditions and various interesting properties. In this work, we perform systematical first-principles investigations on the interactions of antimonene with the small molecules CO, NO, NO2, H2O, O2, NH3 and H2.…
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Antimonene, a new group-VA 2D semiconducting material beyond phosphorene, was recently synthesized through various approaches and was shown to exhibit a good structural integrity in ambient conditions and various interesting properties. In this work, we perform systematical first-principles investigations on the interactions of antimonene with the small molecules CO, NO, NO2, H2O, O2, NH3 and H2. It is found that NO, NO2, H2O, O2, and NH3 serve as charge acceptors, while CO shows a negligible charge transfer. H2 acts as a charge donor to antimonene with the amount of charge transfer being ten times that of H2 on phosphorene. The interaction of the O2 molecule with antimonene is much stronger than that with phosphorene. Surprisingly, the kinetic barrier for the splitting of the O2 molecule on antimonene is low (~0.40 eV), suggesting that pristine antimonene may undergo oxidation in ambient conditions, especially at elevated temperatures. Fortunately, the acceptor role of H2O on antimonene, opposite to a donor role in phosphorene, helps to suppress further structural degradation of the oxidized antimonene by preventing the proton transfer between water molecules and oxygen species to form acids.
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Submitted 21 March, 2018;
originally announced March 2018.
