Showing 1–7 of 7 results for author: Krayev, A

Photoconductive Effects in Single Crystals of BaZrS$_3$

Authors: Boyang Zhao, Huandong Chen, Ragib Ahsan, Fei Hou, Eric R Hoglund, Shantanu Singh, Huan Zhao, Han Htoon, Andrey Krayev, Maruda Shanmugasundaram, Patrick E Hopkins, Jan Seidel, Rehan Kapadia, Jayakanth Ravichandran

Abstract: Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZr… ▽ More Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$. △ Less

Submitted 4 October, 2023; originally announced October 2023.

Metallic vs. Semiconducting Properties of Quasi-One-Dimensional Tantalum Selenide van der Waals Nanoribbons

Authors: Fariborz Kargar, Andrey Krayev, Michelle Wurch, Yassamin Ghafouri, Topojit Debnath, Darshana Wickramaratne, Tina T. Salguero, Roger Lake, Ludwig Bartels, Alexander A. Balandin

Abstract: We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3 nanoribbons exfoliated onto gold substrates. At a selenium deficiency of ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit a strong, broad PL peak centered around ~920 nm (1.35 eV), suggesting their semiconducting behavior. Such nanoribbons revealed a strong TERS response under 785-nm las… ▽ More We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3 nanoribbons exfoliated onto gold substrates. At a selenium deficiency of ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit a strong, broad PL peak centered around ~920 nm (1.35 eV), suggesting their semiconducting behavior. Such nanoribbons revealed a strong TERS response under 785-nm laser excitation, allowing for their nanoscale spectroscopic imaging. Nanoribbons with a smaller selenium deficiency of ~0.15 (Se/Ta=2.85) did not show any PL or TERS response. The confocal Raman spectra of these samples agree with the previously-reported spectra of metallic TaSe3. The differences in the optical response of the nanoribbons examined in this study suggest that even small variations in Se content can induce changes in electronic structure, causing samples to exhibit either metallic or semiconducting character. The temperature-dependent electrical measurements of devices fabricated with both types of materials corroborate these observations. The density-functional-theory calculations revealed that incorporation of an oxygen atom in a Se vacancy can result in band gap opening and thus enable the transition from a metal to a semiconductor. However, the predicted bandgap is substantially smaller than that derived from PL data. These results indicate that the properties of van der Waals materials can vary significantly depending on stoichiometry, defect types and concentration, and possibly environmental and substrate effects. In view of this finding, local probing of nanoribbon properties with TERS becomes essential to understanding such low-dimensional systems. △ Less

Submitted 24 November, 2021; originally announced November 2021.

Comments: 24 pages, 8 figures

Nanoscale Optical Imaging of 2D Semiconductor Stacking Orders by Exciton-Enhanced Second Harmonic Generation

Authors: Kaiyuan Yao, Shuai Zhang, Emanuil Yanev, Kathleen McCreary, Hsun-Jen Chuang, Matthew R. Rosenberger, Thomas Darlington, Andrey Krayev, Berend T. Jonker, James C. Hone, D. N. Basov, P. James Schuck

Abstract: Second harmonic generation (SHG) is a nonlinear optical response arising exclusively from broken inversion symmetry in the electric-dipole limit. Recently, SHG has attracted widespread interest as a versatile and noninvasive tool for characterization of crystal symmetry and emerging ferroic or topological orders in quantum materials. However, conventional far-field optics is unable to probe local… ▽ More Second harmonic generation (SHG) is a nonlinear optical response arising exclusively from broken inversion symmetry in the electric-dipole limit. Recently, SHG has attracted widespread interest as a versatile and noninvasive tool for characterization of crystal symmetry and emerging ferroic or topological orders in quantum materials. However, conventional far-field optics is unable to probe local symmetry at the deep subwavelength scale. Here, we demonstrate near-field SHG imaging of 2D semiconductors and heterostructures with the spatial resolution down to 20 nm using a scattering-type nano-optical apparatus. We show that near-field SHG efficiency is greatly enhanced by excitons in atomically thin transition metal dichalcogenides. Furthermore, by correlating nonlinear and linear scattering-type nano-imaging, we resolve nanoscale variations of interlayer stacking order in bilayer WSe2, and reveal the stacking-tuned excitonic light-matter-interactions. Our work demonstrates nonlinear optical interrogation of crystal symmetry and structure-property relationships at the nanometer length scales relevant to emerging properties in quantum materials. △ Less

Submitted 12 November, 2021; originally announced November 2021.

Nanoscale Raman Characterization of a 2D Semiconductor Lateral Heterostructure Interface

Authors: Sourav Garg, J. Pierce Fix, Andrey V. Krayev, Connor Flanery, Michael Colgrove, Audrey R. Sulkanen, Minyuan Wang, Gang-Yu Liu, Nicholas J. Borys, Patrick Kung

Abstract: The nature of the interface in lateral heterostructures of 2D monolayer semiconductors including its composition, size, and heterogeneity critically impacts the functionalities it engenders on the 2D system for next-generation optoelectronics. Here, we use tip-enhanced Raman scattering (TERS) to characterize the interface in a single-layer MoS2/WS2 lateral heterostructure with a spatial resolution… ▽ More The nature of the interface in lateral heterostructures of 2D monolayer semiconductors including its composition, size, and heterogeneity critically impacts the functionalities it engenders on the 2D system for next-generation optoelectronics. Here, we use tip-enhanced Raman scattering (TERS) to characterize the interface in a single-layer MoS2/WS2 lateral heterostructure with a spatial resolution of 50 nm. Resonant and non-resonant TERS spectroscopies reveal that the interface is alloyed with a size that varies over an order of magnitude-from 50-600 nm-within a single crystallite. Nanoscale imaging of the continuous interfacial evolution of the resonant and non-resonant Raman spectra enables the deconvolution of defect-activation, resonant enhancement, and material composition for several vibrational modes in single-layer MoS2, MoxW1-xS2, and WS2. The results demonstrate the capabilities of nanoscale TERS spectroscopy to elucidate macroscopic structure-property relationships in 2D materials and to characterize lateral interfaces of 2D systems on length scales that are imperative for devices. △ Less

Submitted 29 October, 2021; originally announced November 2021.

Comments: 47 pages, 7 main figures, 7 SI Figures, submitted

Spatiotemporal Imaging of Thickness-Induced Band Bending Junctions

Authors: Joeson Wong, Artur R. Davoyan, Bolin Liao, Andrey Krayev, Kiyoung Jo, Eli Rotenberg, Aaron Bostwick, Chris Jozwiak, Deep Jariwala, Ahmed Zewail, Harry A. Atwater

Abstract: Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a "band bending junction", a new type of semiconductor homojunction whose surface potential landscape depends solely on a difference in thickness between the two semiconduct… ▽ More Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a "band bending junction", a new type of semiconductor homojunction whose surface potential landscape depends solely on a difference in thickness between the two semiconductor regions atop a buried heterojunction interface. Using MoS2 on Au to form a buried heterojunction interface, we find that lateral surface potential differences can arise in MoS2 from the local extent of vertical band bending in thin and thick MoS2 regions. Using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of photogenerated charge carriers and find that lateral carrier separation is enabled by a band bending junction, which is confirmed with semiconductor transport simulations. Band bending junctions may therefore enable new electronic and optoelectronic devices in Van der Waals materials that rely on thickness variations rather than do** to separate charge carriers. △ Less

Submitted 4 March, 2021; originally announced March 2021.

Comments: 16 pages, 4 figures

Fingerprints of the Strong Interaction between Monolayer MoS2 and Gold

Authors: Matej Velicky, Alvaro Rodriguez, Milan Bousa, Andrey V. Krayev, Martin Vondracek, Jan Honolka, Mahdi Ahmadi, Gavin E. Donnelly, Fumin Huang, Hector D. Abruna, Kostya S. Novoselov, Otakar Frank

Abstract: Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution… ▽ More Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution with the MoS2 thickness. Here, we identify specific vibrational and binding energy fingerprints of such strong interaction using Raman and X-ray photoelectron spectroscopy, which indicate substantial strain and charge-transfer in monolayer MoS2. Near-field tip-enhanced Raman spectroscopy reveals heterogeneity of the MoS2-Au interaction at the nanoscale, reflecting the spatial non-conformity between the two materials. Far-field micro-Raman spectroscopy shows that this interaction is strongly affected by the roughness and cleanliness of the underlying Au. Our results elucidate the nature of the strong MoS2-Au interaction and provide guidance for strain and charge do** engineering of MoS2. △ Less

Submitted 15 April, 2020; originally announced April 2020.

Comments: Main text: 23 pages, 4 figures. Supporting Information: 4 pages, 3 figures

Journal ref: J Phys Chem Lett 11 (2020) 6112-6118

Imaging strain-localized exciton states in nanoscale bubbles in monolayer WSe2 at room temperature

Authors: Thomas P. Darlington, Christian Carmesin, Matthias Florian, Emanuil Yanev, Obafunso Ajayi, Jenny Ardelean, Daniel A. Rhodes, Augusto Ghiotto, Andrey Krayev, K. Watanabe, T. Taniguchi, Jeffrey W. Kysar, Abhay N. Pasupathy, James C. Hone, Frank Jahnke, Nicholas J. Borys, P. James Schuck

Abstract: In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poor… ▽ More In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopy of excitons in nanobubbles of localized strain in monolayer WSe2 with atomistic structural models to elucidate how strain induces nanoscale confinement potentials that give rise to highly localized exciton states in 2D semiconductors. Nano-optical imaging of nanobubbles in low-defect monolayers reveal localized excitons on length scales of approximately 10 nm at multiple sites along the periphery of individual nanobubbles, which is in stark contrast to predictions of continuum models of strain. These results agree with theoretical confinement potentials that are atomistically derived from measured topographies of existing nanobubbles. Our results provide one-of-a-kind experimental and theoretical insight of how strain-induced confinement - without crystalline defects - can efficiently localize excitons on length scales commensurate with exciton size, providing key nanoscale structure-property information for quantum emitter phenomena in monolayer WSe2. △ Less

Submitted 3 March, 2020; originally announced March 2020.

Comments: 18 pages, 4 figures