Showing 1–50 of 72 results for author: Kravchenko, S V

Triple-top-gate technique for studying the strongly-interacting 2D electron systems in heterostructures

Authors: M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We develop a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts in the ungated area outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlap** independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in… ▽ More We develop a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts in the ungated area outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlap** independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in the strongly interacting limit at low electron densities, where the energy of the electron-electron interactions dominates all other energy scales. This design allows one to observe the two-threshold voltage-current characteristics that are a signature for the collective depinning and sliding of the electron solid. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Collective depinning and sliding of a quantum Wigner solid in a 2D electron system

Authors: M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility SiGe/Si/SiGe heterostructures. The observed results can be described by a phenomenological theory of the collective depinning of elastic structures, wh… ▽ More We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility SiGe/Si/SiGe heterostructures. The observed results can be described by a phenomenological theory of the collective depinning of elastic structures, which naturally generates a peak of a broadband current noise between the dynamic and static thresholds and changes to sliding of the solid over a pinning barrier above the static threshold. This gives compelling evidence for the electron solid formation in this electron system and shows the generality of the effect for different classes of electron systems. △ Less

Submitted 19 January, 2024; v1 submitted 4 October, 2023; originally announced October 2023.

Comments: As published

Journal ref: Phys. Rev. B 109, L041114 (2024)

Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system

Authors: M. Yu. Melnikov, A. A. Shakirov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related… ▽ More The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons' spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories. △ Less

Submitted 12 October, 2023; v1 submitted 9 April, 2023; originally announced April 2023.

Journal ref: Sci. Rep. 13, 17364 (2023)

Spin and valley effects on the quantum phase transition in two dimensions

Authors: A. A. Shashkin, S. V. Kravchenko

Abstract: Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The transition survives in this system in parallel magnetic fields strong enough to completely polarize the electrons' spins, thus making the electron system "spinless".… ▽ More Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The transition survives in this system in parallel magnetic fields strong enough to completely polarize the electrons' spins, thus making the electron system "spinless". In both cases, the resistivity on the metallic side near the transition increases with decreasing temperature, reaches a maximum at a temperature $T_{\text{max}}$, and then decreases. The decrease reaches more than an order of magnitude in zero magnetic field. The value of $T_{\text{max}}$ in zero magnetic field is found to be close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $T_{\text{max}}$ decreases appreciably for spinless electrons in spin-polarizing magnetic fields. The observed behavior of $T_{\text{max}}$ cannot be described by existing theories. The results indicate the spin-related origin of the effect. At the same time, the low-temperature resistivity drop in both spin-unpolarized and spinless electron systems is described quantitatively by the dynamical mean-field theory. △ Less

Submitted 10 August, 2022; originally announced August 2022.

Comments: Contribution to JETP special issue in honor of E. I. Rashba's 95th birthday

Journal ref: JETP 135, 432 (2022)

Noise signal as input data in self-organized neural networks

Authors: V. Kagalovsky, D. Nemirovsky, S. V. Kravchenko

Abstract: Self-organizing neural networks are used to analyze uncorrelated white noises of different distribution types (normal, triangular, and uniform). The artificially generated noises are analyzed by clustering the measured time signal sequence samples without its preprocessing. Using this approach, we analyze, for the first time, the current noise produced by a sliding "Wigner-crystal"-like structure… ▽ More Self-organizing neural networks are used to analyze uncorrelated white noises of different distribution types (normal, triangular, and uniform). The artificially generated noises are analyzed by clustering the measured time signal sequence samples without its preprocessing. Using this approach, we analyze, for the first time, the current noise produced by a sliding "Wigner-crystal"-like structure in the insulating phase of a 2D electron system in silicon. The possibilities of using the method for analyzing and comparing experimental data obtained by observing various effects in solid-state physics and simulated numerical data using theoretical models are discussed. △ Less

Submitted 6 June, 2022; originally announced June 2022.

Journal ref: Low Temp. Phys. 48, 452 (2022)

Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems

Authors: V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. V. Kravchenko

Abstract: We review recent experimental results indicating the band flattening and Landau level merging at the chemical potential in strongly-correlated two-dimensional (2D) electron systems. In ultra-clean, strongly interacting 2D electron system in SiGe/Si/SiGe quantum wells, the effective electron mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-… ▽ More We review recent experimental results indicating the band flattening and Landau level merging at the chemical potential in strongly-correlated two-dimensional (2D) electron systems. In ultra-clean, strongly interacting 2D electron system in SiGe/Si/SiGe quantum wells, the effective electron mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-averaged mass saturates at low densities. The qualitatively different behavior of the two masses reveals a precursor to the interaction-induced single-particle spectrum flattening at the chemical potential in this electron system, in which case the fermion "condensation" at the Fermi level occurs in a range of momenta, unlike the condensation of bosons. In strong magnetic fields, perpendicular to the 2D electron layer, a similar effect of different fillings of quantum levels at the chemical potential -- the merging of the spin- and valley-split Landau levels at the chemical potential -- is observed in Si inversion layers and bilayer 2D electron system in GaAs. Indication of merging of the quantum levels of composite fermions with different valley indices is also reported in ultra-clean SiGe/Si/SiGe quantum wells. △ Less

Submitted 11 August, 2022; v1 submitted 26 April, 2022; originally announced April 2022.

Comments: Minor typos corrected. As published

Journal ref: JETP Lett. 116, 156 (2022)

Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

Authors: A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S. -H. Huang, C. W. Liu, Amy Y. X. Zhu, S. V. Kravchenko

Abstract: The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is… ▽ More The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $T_{\text{max}}$ decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of $T_{\text{max}}$ cannot be described by existing theories. The results indicate the spin-related origin of the effect. △ Less

Submitted 24 March, 2022; v1 submitted 10 June, 2021; originally announced June 2021.

Comments: As published

Journal ref: Sci. Rep. 12, 5080 (2022)

Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system

Authors: A. A. Shashkin, S. V. Kravchenko

Abstract: We review recent experimental results on the metal-insulator transition and low-density phases in strongly-interacting, low-disordered Si-based two-dimensional electron systems. Special attention is given to the metallic state in ultra-clean SiGe quantum wells and to the evidence for a flat band at the Fermi level and a quantum electron solid. We review recent experimental results on the metal-insulator transition and low-density phases in strongly-interacting, low-disordered Si-based two-dimensional electron systems. Special attention is given to the metallic state in ultra-clean SiGe quantum wells and to the evidence for a flat band at the Fermi level and a quantum electron solid. △ Less

Submitted 29 April, 2021; v1 submitted 29 January, 2021; originally announced February 2021.

Comments: A short review for the special issue "Localisation 2020" of Annals of Physics dedicated to P. W. Anderson

Journal ref: Ann. Phys. 435, 168542 (2021)

Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system

Authors: V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The minima at $p=3$ disappear below a certain electron density, although the surrounding minima at $p=2$ and $p=4$ survive at significantly lower densitie… ▽ More We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The minima at $p=3$ disappear below a certain electron density, although the surrounding minima at $p=2$ and $p=4$ survive at significantly lower densities. Furthermore, the onset for the resistance minimum at a filling factor $ν=3/5$ is found to be independent of the tilt angle of the magnetic field. These surprising results indicate the intersection or merging of the quantum levels of composite fermions with different valley indices, which reveals the valley effect on fractions. △ Less

Submitted 14 April, 2021; v1 submitted 14 January, 2021; originally announced January 2021.

Comments: As published

Journal ref: Phys. Rev. B 103, 161302 (2021)

Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells

Authors: A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. Radonjić, V. Dobrosavljević, S. -H. Huang, C. W. Liu, A. Y. X. Zhu, S. V. Kravchenko

Abstract: We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of… ▽ More We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities. △ Less

Submitted 26 August, 2020; v1 submitted 30 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 102, 081119(R) (2020)

Metallic state in a strongly interacting spinless two-valley electron system in two dimensions

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. -H. Huang, C. W. Liu, A. Y. X. Zhu, S. V. Kravchenko

Abstract: We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless". It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, st… ▽ More We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless". It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, still remains strong even when the spin degree of freedom is removed. Several independent methods have been used to establish the existence of the genuine MIT in the spinless two-valley 2D system. This is in contrast to the previous results obtained on more disordered silicon samples, where the polarizing magnetic field causes a complete quench of the metallic temperature behavior. △ Less

Submitted 14 January, 2020; v1 submitted 23 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 101, 045302 (2020)

Recent developments in the field of the metal-insulator transition in two dimensions

Authors: Alexander A. Shashkin, Sergey V. Kravchenko

Abstract: We review the latest developments in the field of the metal-insulator transition in strongly-correlated two-dimensional electron systems. Particular attention is given to recent discoveries of a sliding quantum electron solid and interaction-induced spectrum flattening at the Fermi level in high-quality silicon-based structures. We review the latest developments in the field of the metal-insulator transition in strongly-correlated two-dimensional electron systems. Particular attention is given to recent discoveries of a sliding quantum electron solid and interaction-induced spectrum flattening at the Fermi level in high-quality silicon-based structures. △ Less

Submitted 19 March, 2019; v1 submitted 28 November, 2018; originally announced November 2018.

Comments: As published

Journal ref: Appl. Sci. 9, 1169 (2019)

Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S. -H. Huang, C. W. Liu

Abstract: The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samples, in ultra-high mobility SiGe/Si/SiGe quantum wells the critical electron density, $n_{\text{c}}$, of the MIT becomes smaller than the density,… ▽ More The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samples, in ultra-high mobility SiGe/Si/SiGe quantum wells the critical electron density, $n_{\text{c}}$, of the MIT becomes smaller than the density, $n_{\text{m}}$, where the effective mass at the Fermi level tends to diverge. Near the topological phase transition expected at $n_{\text{m}}$, the metallic temperature dependence of the resistance should be strengthened, which is consistent with the experimental observation of more than an order of magnitude resistance drop with decreasing temperature below $\sim1$ K. △ Less

Submitted 5 February, 2019; v1 submitted 29 August, 2018; originally announced August 2018.

Comments: Misprints corrected. As published

Journal ref: Phys. Rev. B 99, 081106(R) (2019); Erratum: Phys. Rev. B 107, 039902 (2023)

Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

Authors: V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3,… ▽ More We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3, and 4. Minima with $p$ = 3 disappear in magnetic fields below 7 Tesla, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors $ν$ = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Journal ref: JETP Lett. 107, 794 (2018)

Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

Authors: M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and cr… ▽ More We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and crystallographic axes, a method of recalculating the magnetoresistance measured at $I\perp B_\parallel$ into the one measured at $I\parallel B_\parallel$ is suggested and is shown to yield results that agree with the experiment. △ Less

Submitted 8 December, 2017; v1 submitted 21 June, 2017; originally announced June 2017.

Comments: As published

Journal ref: J. Appl. Phys. 122, 224301 (2017)

Transport evidence for a sliding two-dimensional quantum electron solid

Authors: Pedro Brussarski, S. Li, S. V. Kravchenko, A. A. Shashkin, M. P. Sarachik

Abstract: Ignited by the discovery of the metal-insulator transition, the behaviour of low-disorder two-dimensional (2D) electron systems is currently the focus of a great deal of attention. In the strongly-interacting limit, electrons are expected to crystallize into a quantum Wigner crystal, but no definitive evidence for this effect has been obtained despite much experimental effort over the years. Here,… ▽ More Ignited by the discovery of the metal-insulator transition, the behaviour of low-disorder two-dimensional (2D) electron systems is currently the focus of a great deal of attention. In the strongly-interacting limit, electrons are expected to crystallize into a quantum Wigner crystal, but no definitive evidence for this effect has been obtained despite much experimental effort over the years. Here, studying the insulating state of a 2D electron system in silicon, we have found two-threshold voltage-current characteristics with a dramatic increase in noise between the two threshold voltages. This behaviour cannot be described within existing traditional models. On the other hand, it is strikingly similar to that observed for the collective depinning of the vortex lattice in Type-II superconductors. Adapting the model used for vortexes to the case of an electron solid yields good agreement with our experimental results, favouring the quantum electron solid as the origin of the low-density state. △ Less

Submitted 22 August, 2018; v1 submitted 14 April, 2017; originally announced April 2017.

Journal ref: Nature Communications 9, 3803 (2018)

Spin polarization and exchange-correlation effects in transport properties of two-dimensional electron systems in silicon

Authors: V. T. Dolgopolov, A. A. Shashkin, S. V. Kravchenko

Abstract: We show that the parallel magnetic field-induced increase in the critical electron density for the Anderson transition in a strongly interacting two-dimensional electron system is caused by the effects of exchange and correlations. If the transition occurs when electron spins are only partially polarized, additional increase in the magnetic field is necessary to achieve the full spin polarization… ▽ More We show that the parallel magnetic field-induced increase in the critical electron density for the Anderson transition in a strongly interacting two-dimensional electron system is caused by the effects of exchange and correlations. If the transition occurs when electron spins are only partially polarized, additional increase in the magnetic field is necessary to achieve the full spin polarization in the insulating state due to the exchange effects. △ Less

Submitted 18 August, 2017; v1 submitted 5 April, 2017; originally announced April 2017.

Comments: As published

Journal ref: Phys. Rev. B 96, 075307 (2017)

Metal-insulator transition in a strongly-correlated two-dimensional electron system

Authors: A. A. Shashkin, S. V. Kravchenko

Abstract: Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility, effective mass, and thermopower in low-disordered silicon MOSFETs. Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility, effective mass, and thermopower in low-disordered silicon MOSFETs. △ Less

Submitted 17 November, 2016; originally announced November 2016.

Comments: This is a chapter for the book "Strongly correlated electrons in two dimensions", edited by Sergey V. Kravchenko (Pan Stanford Publishing, Singapore, 2016)

Indication of band flattening at the Fermi level in a strongly correlated electron system

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, $m$, with that at the Fermi level, $m_F$, and verify that the behaviours of these measured values are qualitatively different. With decreasing electron density (or increasing interaction strength), the mass at the Fermi level monotonically increases in the… ▽ More Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, $m$, with that at the Fermi level, $m_F$, and verify that the behaviours of these measured values are qualitatively different. With decreasing electron density (or increasing interaction strength), the mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-averaged mass saturates at low densities. The qualitatively different behaviour reveals a precursor to the interaction-induced single-particle spectrum flattening at the Fermi level in this electron system. △ Less

Submitted 7 November, 2017; v1 submitted 28 April, 2016; originally announced April 2016.

Journal ref: Scientific Reports 7, 14539 (2017)

Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobili… ▽ More We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential. △ Less

Submitted 5 March, 2015; v1 submitted 22 October, 2014; originally announced October 2014.

Comments: as published. arXiv admin note: substantial text overlap with arXiv:1409.2712

Journal ref: Appl. Phys. Lett. 106, 092102 (2015)

The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko, S. -H. Huang, C. W. Liu

Abstract: The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n_s, the effective mass has been found to grow with decreasing n_s, obeying the relation m*/m_b=n_s/(n_s-n_c), where m_b is the electron band mass and n_c~0… ▽ More The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n_s, the effective mass has been found to grow with decreasing n_s, obeying the relation m*/m_b=n_s/(n_s-n_c), where m_b is the electron band mass and n_c~0.54*10^11 cm^-2. In samples with maximum mobilities ranging between 90 and 220 m^2/Vs, the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples. △ Less

Submitted 9 September, 2014; originally announced September 2014.

Journal ref: JETP Lett. 100, 114 (2014)

Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection

Authors: D. I. Golosov, I. Shlimak, A. Butenko, K. -J. Friedland, S. V. Kravchenko

Abstract: We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1 and n_2 across the slot. Dynamic longitudinal resistance was measured by a standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that in a parallel magnetic field, the resistance of the sample, R(I_DC), i… ▽ More We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1 and n_2 across the slot. Dynamic longitudinal resistance was measured by a standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that in a parallel magnetic field, the resistance of the sample, R(I_DC), is asymmetric with respect to the direction of the DC current. The asymmetry becomes stronger with an increase of either the magnetic field or the difference between n_1 and n_2. These observations are interpreted in terms of the effective spin injection: the degree of spin polarisation is different in the two parts of the sample, implying different magnitudes of spin current away from the slot. The carriers thus leave the excess spin (of the appropriate sign) in the region around the slot, leading to spin accumulation (or depletion) and to the spin drift-diffusion phenomena. Due to the positive magnetoresistance of the two-dimensional electron gas, this change in a local magnetisation affects the resistivity near the slot and the measured net resistance, giving rise to an asymmetric contribution. We further observe that the value of R(I_DC) saturates at large I_DC; we suggest that this is due to electron tunnelling from the two-dimensional n-type layer into the p-type silicon (or into another "spin reservoir") at the slot. △ Less

Submitted 30 September, 2013; v1 submitted 23 July, 2013; originally announced July 2013.

Comments: 13 pages, LaTeX-Revtex, 12 PostScript figures, minor corrections. Phys. Rev. B, in press

Journal ref: Phys. Rev. B vol. 88, 155313 (2013)

Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities

Authors: I. Shlimak, A. Butenko, D. I. Golosov, K. -J. Friedland, S. V. Kravchenko

Abstract: Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the normalized PMR curves, R(B)/R(0), merge together when the field is scaled according to B/B_c(n) where B_c is the field in which electrons become fully spin polarized.… ▽ More Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the normalized PMR curves, R(B)/R(0), merge together when the field is scaled according to B/B_c(n) where B_c is the field in which electrons become fully spin polarized. The values of B_c have been calculated from the simple equality between the Zeeman splitting energy and the Fermi energy taking into account the experimentally measured dependence of the spin susceptibility on the electron density. This extends the range of validity of the scaling all the way to a deeply metallic regime far away from MIT. The subsequent analysis of PMR for low n >~ n_c demonstrated that the merging of the initial parts of curves can bee achieved only with taking into account the temperature dependence of B_c. It is also shown that the shape of the PMR curves at strong magnetic fields is affected by a crossover from a purely two-dimensional (2D) electron transport to a regime where out-of-plane carrier motion becomes important (quasi-three-dimensional regime). △ Less

Submitted 15 January, 2012; v1 submitted 8 December, 2011; originally announced December 2011.

Comments: 5 pages, including 6 figures; misprints corrected; Europhys. Lett. (in press)

Journal ref: Europhys. Lett. vol. 97, 37002 (2012)

Critical Behavior of a Strongly Interacting 2D Electron System

Authors: A. Mokashi, S. Li, Bo Wen, S. V. Kravchenko, A. A. Shashkin, V. T. Dolgopolov, M. P. Sarachik

Abstract: With decreasing density $n_s$ the thermopower $S$ of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density $n_t$ consistent with the critical form $(-T/S) \propto (n_s-n_t)^x$ with $x=1.0\pm 0.1$ ($T$ is the temperature). Our results provide clear evidence for an intera… ▽ More With decreasing density $n_s$ the thermopower $S$ of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density $n_t$ consistent with the critical form $(-T/S) \propto (n_s-n_t)^x$ with $x=1.0\pm 0.1$ ($T$ is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly-interacting 2D electron system. △ Less

Submitted 3 September, 2012; v1 submitted 30 November, 2011; originally announced November 2011.

Comments: Published version - 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 109, 096405 (2012)

A metal-insulator transition in 2D: Established facts and open questions

Authors: S. V. Kravchenko, M. P. Sarachik

Abstract: The discovery of a metallic state and a metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenges one of the most influential paradigms of modern mesoscopic physics, namely, that "there is no true metallic behavior in two dimensions". However, this conclusion was drawn for systems of noninteracting or weakly interacting carriers, while in all 2D systems exhibiting the m… ▽ More The discovery of a metallic state and a metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenges one of the most influential paradigms of modern mesoscopic physics, namely, that "there is no true metallic behavior in two dimensions". However, this conclusion was drawn for systems of noninteracting or weakly interacting carriers, while in all 2D systems exhibiting the metal-insulator transition, the interaction energy greatly exceeds all other energy scales. We review the main experimental findings and show that, although significant progress has been achieved in our understanding of the MIT in 2D, many open questions remain. △ Less

Submitted 29 March, 2010; v1 submitted 15 March, 2010; originally announced March 2010.

Comments: Review article for "50 Years of Anderson Localization". A paragraph briefly describing a theory, based on the Pomeranchuk effect, has been added.

Journal ref: Int. J. Mod. Phys. B 24, 1640 (2010)

Quantum phase transitions in two-dimensional electron systems

Authors: A. A. Shashkin, S. V. Kravchenko

Abstract: This is a chapter for the book "Understanding Quantum Phase Transitions" edited by Lincoln D. Carr (Taylor & Francis, Boca Raton, 2010) This is a chapter for the book "Understanding Quantum Phase Transitions" edited by Lincoln D. Carr (Taylor & Francis, Boca Raton, 2010) △ Less

Submitted 30 May, 2010; v1 submitted 12 February, 2010; originally announced February 2010.

Comments: Final version

Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

Authors: A. Punnoose, A. M. Finkel'stein, A. Mokashi, S. V. Kravchenko

Abstract: We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures. We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures. △ Less

Submitted 28 October, 2009; originally announced October 2009.

Journal ref: Phys. Rev. B 82, 201308(R) (2010)

Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

Authors: I. Shlimak, D. I. Golosov, A. Butenko, K. -J. Friedland, S. V. Kravchenko

Abstract: We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with re… ▽ More We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot. △ Less

Submitted 8 September, 2009; originally announced September 2009.

Comments: 4 LaTeX pages, 2 figures. Annalen der Physik, in press

Journal ref: Ann. Phys. (Berlin) vol. 18, pp. 913-917 (2009)

Transport in strongly correlated two dimensional electron fluids

Authors: B. Spivak, S. V. Kravchenko, S. A. Kivelson, X. P. A. Gao

Abstract: We present an overview of the measured transport properties of the two dimensional electron fluids in high mobility semiconductor devices with low electron densities, and of some of the theories that have been proposed to account for them. Many features of the observations are not easily reconciled with a description based on the well understood physics of weakly interacting quasiparticles in a… ▽ More We present an overview of the measured transport properties of the two dimensional electron fluids in high mobility semiconductor devices with low electron densities, and of some of the theories that have been proposed to account for them. Many features of the observations are not easily reconciled with a description based on the well understood physics of weakly interacting quasiparticles in a disordered medium. Rather, they reflect new physics associated with strong correlation effects, which warrant further study. △ Less

Submitted 10 December, 2009; v1 submitted 4 May, 2009; originally announced May 2009.

Comments: Final version

Journal ref: Rev. Mod. Phys. 82, 1743 (2010)

Electron transport in a slot-gate Si MOSFET

Authors: I. Shlimak, v. Ginodman, A. Butenko, K. -J. Friedland, S. V. Kravchenko

Abstract: The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is… ▽ More The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is added to the longitudinal voltage only on one side depending on the gradient of the gate voltages and the direction of the external magnetic field. After subtracting the Hall voltage difference, the increase in longitudinal resistance is observed when electrons on the opposite sides of the slot occupy Landau levels with different spin orientations. △ Less

Submitted 31 March, 2008; originally announced March 2008.

Comments: To appear in Europhys. Lett

Flow diagram of the metal-insulator transition in two dimensions

Authors: S. Anissimova, S. V. Kravchenko, A. Punnoose, A. M. Finkel'stein, T. M. Klapwijk

Abstract: The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions, there is no true metallic behaviour'; no matter how weak the disorder, electrons would be trapped and unable to conduct a current. However, that theory did no… ▽ More The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions, there is no true metallic behaviour'; no matter how weak the disorder, electrons would be trapped and unable to conduct a current. However, that theory did not account for interactions between the electrons. Here we investigate the interplay between the electron-electron interactions and disorder near the MIT using simultaneous measurements of electrical resistivity and magnetoconductance. We show that both the resistance and interaction amplitude exhibit a fan-like spread as the MIT is crossed. From these data we construct a resistance-interaction flow diagram of the MIT that clearly reveals a quantum critical point, as predicted by the two-parameter scaling theory (Punnoose and Finkel'stein, Science 310, 289 (2005)). The metallic side of this diagram is accurately described by the renormalization group theory without any fitting parameters. In particular, the metallic temperature dependence of the resistance sets in when the interaction amplitude reaches gamma_2 = 0.45 - a value in remarkable agreement with the one predicted by the theory. △ Less

Submitted 3 August, 2007; v1 submitted 7 September, 2006; originally announced September 2006.

Comments: as published

Journal ref: Nature Phys. 3, 707 (2007)

Thermodynamic magnetization of a strongly correlated two-dimensional electron system

Authors: S. V. Kravchenko, A. A. Shashkin, S. Anissimova, A. Venkatesan, M. R. Sakr, V. T. Dolgopolov, T. M. Klapwijk

Abstract: We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic of the existence of a phase transition. A new, parameter-free method is used to directly determine the spectrum characteristics (Lande g-factor and the cyclo… ▽ More We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic of the existence of a phase transition. A new, parameter-free method is used to directly determine the spectrum characteristics (Lande g-factor and the cyclotron mass) when the Fermi level lies outside the spectral gaps and the inter-level interactions between quasiparticles are avoided. It turns out that, unlike in the Stoner scenario, the critical growth of the spin susceptibility originates from the dramatic enhancement of the effective mass, while the enhancement of the g-factor is weak and practically independent of the electron density. △ Less

Submitted 15 June, 2006; v1 submitted 22 February, 2006; originally announced February 2006.

Comments: As published

Journal ref: Ann. Phys. 321, 1588 (2006)

Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime

Authors: I. Shlimak, V. Ginodman, K. -J. Friedland, S. V. Kravchenko

Abstract: We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau filling factor ν=6 directly to the plateau at ν=4, skip** the plateau at ν=5. However, when the filling factor approaches ν=5, the Hall resistance sharply "d… ▽ More We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau filling factor ν=6 directly to the plateau at ν=4, skip** the plateau at ν=5. However, when the filling factor approaches ν=5, the Hall resistance sharply "dives" to the value 1/5(h/e^2) characteristic of the ν=5 plateau, and then returns to 1/4(h/e^2). This is interpreted as a manifestation of the oscillating exchange enhancement of the valley splitting when the Fermi level is in the middle between two adjacent valley-split Landau bands with the asymmetric position of the extended states. △ Less

Submitted 16 February, 2006; originally announced February 2006.

Comments: 4 pages, 6 figures

Journal ref: Phys. Rev. B 73, 205324 (2006)

Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime

Authors: A. A. Shashkin, E. V. Deviatov, V. T. Dolgopolov, A. A. Kapustin, S. Anissimova, A. Venkatesan, S. V. Kravchenko, T. M. Klapwijk

Abstract: In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization but reappears again in the fully spin-polarized state, being, however, suppressed relative to the zero-field case… ▽ More In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization but reappears again in the fully spin-polarized state, being, however, suppressed relative to the zero-field case. Analysis of the degree of the suppression allows one to distinguish between the screening and the interaction-based theories. △ Less

Submitted 23 March, 2006; v1 submitted 12 April, 2005; originally announced April 2005.

Journal ref: Phys. Rev. B 73, 115420 (2006)

Magnetization of a strongly interacting two-dimensional electron system in perpendicular magnetic fields

Authors: S. Anissimova, A. Venkatesan, A. A. Shashkin, M. R. Sakr, S. V. Kravchenko, T. M. Klapwijk

Abstract: We measure the thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon in perpendicular magnetic fields. A new, parameter-free method is used to directly determine the spectrum characteristics (Lande g-factor and the cyclotron mass) when the Fermi level lies outside the spectral gaps and the inter-level interactions between quasiparticles a… ▽ More We measure the thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon in perpendicular magnetic fields. A new, parameter-free method is used to directly determine the spectrum characteristics (Lande g-factor and the cyclotron mass) when the Fermi level lies outside the spectral gaps and the inter-level interactions between quasiparticles are avoided. Intra-level interactions are found to strongly modify the magnetization, without affecting the determined g* and m*. △ Less

Submitted 1 February, 2006; v1 submitted 6 March, 2005; originally announced March 2005.

Comments: As published

Journal ref: Phys. Rev. Lett. 96, 046409 (2006)

Shashkin et al. reply to cond-mat/0410409

Authors: A. A. Shashkin, S. Anissimova, M. R. Sakr, S. V. Kravchenko, V. T. Dolgopolov, T. M. Klapwijk

Abstract: We show that the Comment by Reznikov and Sivan (cond-mat/0410409) is erroneous because the authors do not distinguish between Pauli and Curie spin susceptibility. We show that the Comment by Reznikov and Sivan (cond-mat/0410409) is erroneous because the authors do not distinguish between Pauli and Curie spin susceptibility. △ Less

Submitted 25 October, 2004; originally announced October 2004.

Pauli spin susceptibility of a strongly correlated two-dimensional electron liquid

Authors: A. A. Shashkin, S. Anissimova, M. R. Sakr, S. V. Kravchenko, V. T. Dolgopolov, T. M. Klapwijk

Abstract: Thermodynamic measurements reveal that the Pauli spin susceptibility of strongly correlated two-dimensional electrons in silicon grows critically at low electron densities - behavior that is characteristic of the existence of a phase transition. Thermodynamic measurements reveal that the Pauli spin susceptibility of strongly correlated two-dimensional electrons in silicon grows critically at low electron densities - behavior that is characteristic of the existence of a phase transition. △ Less

Submitted 23 January, 2006; v1 submitted 6 September, 2004; originally announced September 2004.

Comments: As published

Journal ref: Phys. Rev. Lett. 96, 036403 (2006)

Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"

Authors: A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko

Abstract: We show that the comparison between theory and experiment, performed by Pudalov et al. in PRL 91, 126403 (2003), is not valid. We show that the comparison between theory and experiment, performed by Pudalov et al. in PRL 91, 126403 (2003), is not valid. △ Less

Submitted 7 June, 2004; v1 submitted 7 November, 2003; originally announced November 2003.

Comments: comment on PRL 91, 126403 (2003) by Pudalov et al

Journal ref: Phys. Rev. Lett. 93, 269705 (2004)

Metal-insulator transition in two-dimensional electron systems

Authors: S. V. Kravchenko, M. P. Sarachik

Abstract: The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly interacting electrons, the ever-present randomness causes the resistance to rise as the temperature is decreased, leading to an insulating ground state. However, new e… ▽ More The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly interacting electrons, the ever-present randomness causes the resistance to rise as the temperature is decreased, leading to an insulating ground state. However, new evidence has emerged within the past decade indicating a transition from insulating to metallic phase in two-dimensional systems of strongly interacting electrons. We review earlier experiments that demonstrate the unexpected presence of a metallic phase in two dimensions, and present an overview of recent experiments with emphasis on the anomalous magnetic properties that have been observed in the vicinity of the transition. △ Less

Submitted 3 December, 2003; v1 submitted 5 September, 2003; originally announced September 2003.

Comments: As published

Journal ref: Rep. Prog. Phys. 67, 1 (2004)

Sharply increasing effective mass: a precursor of the spontaneous spin polarization in a dilute two-dimensional electron system

Authors: A. A. Shashkin, S. V. Kravchenko, V. T. Dolgopolov, T. M. Klapwijk

Abstract: We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons' spins and (ii) analysis of the Shubnikov-de Haas oscillations. We have observed a sharp increase of the effective mass with decreasing electron density while… ▽ More We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons' spins and (ii) analysis of the Shubnikov-de Haas oscillations. We have observed a sharp increase of the effective mass with decreasing electron density while the g-factor remains nearly constant and close to its value in bulk silicon. The corresponding strong rise of the spin susceptibility may be a precursor of a spontaneous spin polarization; unlike in the Stoner scenario, it originates from the enhancement of the effective mass rather than the increase of g-factor. Furthermore, using tilted magnetic fields, we have found that the enhanced effective mass is independent of the degree of spin polarization and, therefore, its increase is not related to spin exchange effects, in contradiction with existing theories. Our results show that the dilute 2D electron system in silicon behaves well beyond a weakly interacting Fermi liquid. △ Less

Submitted 3 February, 2003; v1 submitted 3 February, 2003; originally announced February 2003.

Comments: This paper summarizes results reported in our recent publications on the subject

Journal ref: J. Phys. A: Math. Gen. 36, 9237-9247 (2003)

Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system

Authors: A. A. Shashkin, Maryam Rahimi, S. Anissimova, S. V. Kravchenko, V. T. Dolgopolov, T. M. Klapwijk

Abstract: We have accurately measured the effective mass in a dilute two-dimensional electron system in silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density has been observed. Using tilted magnetic fields, we have found that the enhanced effective mass is independent of the de… ▽ More We have accurately measured the effective mass in a dilute two-dimensional electron system in silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density has been observed. Using tilted magnetic fields, we have found that the enhanced effective mass is independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement and is in contradiction with existing theories. △ Less

Submitted 13 January, 2003; originally announced January 2003.

Journal ref: Phys. Rev. Lett. 91, 046403 (2003)

Coherent back-scattering near the two-dimensional metal-insulator transition

Authors: Maryam Rahimi, S. Anissimova, M. R. Sakr, S. V. Kravchenko, T. M. Klapwijk

Abstract: We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon… ▽ More We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching to the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field. △ Less

Submitted 2 August, 2003; v1 submitted 30 September, 2002; originally announced October 2002.

Comments: to appear in PRL

Journal ref: Phys. Rev. Lett. 91, 116402 (2003)

Compressibility of a two-dimensional hole gas in tilted magnetic field

Authors: Maryam Rahimi, M. R. Sakr, S. V. Kravchenko, S. C. Dultz, H. W. Jiang

Abstract: We have measured compressibility of a two-dimensional hole gas in p-GaAs/AlGaAs heterostructure, grown on a (100) surface, in the presence of a tilted magnetic field. It turns out that the parallel component of magnetic field affects neither the spin splitting nor the density of states. We conclude that: (a) g-factor in the parallel magnetic field is nearly zero in this system; and (b) the level… ▽ More We have measured compressibility of a two-dimensional hole gas in p-GaAs/AlGaAs heterostructure, grown on a (100) surface, in the presence of a tilted magnetic field. It turns out that the parallel component of magnetic field affects neither the spin splitting nor the density of states. We conclude that: (a) g-factor in the parallel magnetic field is nearly zero in this system; and (b) the level of the disorder potential is not sensitive to the parallel component of the magnetic field. △ Less

Submitted 5 June, 2002; originally announced June 2002.

Journal ref: Phys. Rev. B 67, 081302(R) (2003)

Sharp increase of the effective mass near the critical density in a metallic 2D electron system

Authors: A. A. Shashkin, S. V. Kravchenko, V. T. Dolgopolov, T. M. Klapwijk

Abstract: We find that at intermediate temperatures, the metallic temperature dependence of the conductivity σ(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)). The tendency of the slope dσ/dT to diverge near the critical electron density is in agreement with the previously suggested ferromagnetic instability in this elect… ▽ More We find that at intermediate temperatures, the metallic temperature dependence of the conductivity σ(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)). The tendency of the slope dσ/dT to diverge near the critical electron density is in agreement with the previously suggested ferromagnetic instability in this electron system. Unexpectedly, it is found to originate from the sharp enhancement of the effective mass, while the effective Lande g factor remains nearly constant and close to its value in bulk silicon. △ Less

Submitted 1 December, 2001; v1 submitted 25 November, 2001; originally announced November 2001.

Journal ref: Phys. Rev. B 66, 073303 (2002)

"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures

Authors: M. R. Sakr, Maryam Rahimi, S. V. Kravchenko, P. T. Coleridge, R. L. Williams, J. Lapointe

Abstract: We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors ν=1 and 2 and, for the first time, between ν=2 and 3 and between ν=4 and 6. The latter are in contradiction with the original global phase diagram for the quantum Hall effect… ▽ More We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors ν=1 and 2 and, for the first time, between ν=2 and 3 and between ν=4 and 6. The latter are in contradiction with the original global phase diagram for the quantum Hall effect. We suggest that the application of a (perpendicular) magnetic field induces insulating behavior in metallic p-SiGe heterostructures in the same way as in Si MOSFETs. This insulator is then in competition with, and interrupted by, integer quantum Hall states leading to the multiple re-entrant transitions. The phase diagram which accounts for these transition is similar to that previously obtained in Si MOSFETs thus confirming its universal character. △ Less

Submitted 9 July, 2001; originally announced July 2001.

Journal ref: Phys. Rev. B 64, 161308(R) (2001)

Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"

Authors: S. V. Kravchenko, A. A. Shashkin, V. T. Dolgopolov

Abstract: In a recent Letter (PRL 88, 196404 (2002)), the effective g-factor and the effective mass have been studied by Pudalov et al. in a dilute 2D electron system in silicon. The authors contrast their data with the data obtained by our group (Shashkin et al., PRL 87, 086801 (2001)) and claim that the spin susceptibility "increases gradually with decreasing density", which "does not support the occurr… ▽ More In a recent Letter (PRL 88, 196404 (2002)), the effective g-factor and the effective mass have been studied by Pudalov et al. in a dilute 2D electron system in silicon. The authors contrast their data with the data obtained by our group (Shashkin et al., PRL 87, 086801 (2001)) and claim that the spin susceptibility "increases gradually with decreasing density", which "does not support the occurrence of spontaneous spin polarization and divergence of gm..." The purpose of this Comment is to show that all available experimental data, including those of Pudalov et al., are consistent with each other and are in favor of a spontaneous spin polarization and divergence of gm at a finite electron density in this 2D system. △ Less

Submitted 12 September, 2002; v1 submitted 4 June, 2001; originally announced June 2001.

Comments: as published

Journal ref: Phys. Rev. Lett. 89, 219701 (2002).

Fate of the extended states in a vanishing magnetic field: the role of spins in strongly-interacting 2D electron systems

Authors: M. R. Sakr, Maryam Rahimi, S. V. Kravchenko

Abstract: In non-interacting or weakly-interacting 2D electron systems, the energy of the extended states increases as the perpendicular magnetic field approaches zero: the extended states "float up" in energy, giving rise to an insulator. However, in those 2D systems where metallic conductivity has been recently observed in zero magnetic field, the energy of the extended states remains constant or even d… ▽ More In non-interacting or weakly-interacting 2D electron systems, the energy of the extended states increases as the perpendicular magnetic field approaches zero: the extended states "float up" in energy, giving rise to an insulator. However, in those 2D systems where metallic conductivity has been recently observed in zero magnetic field, the energy of the extended states remains constant or even decreases as B -> 0, thus allowing conduction in the limit of zero temperature. Here we show that aligning the electrons' spins causes the extended states to once more "float up" in energy in the vanishing perpendicular magnetic field, as they do for non- or weakly-interacting electrons. The difference between extended states that float up (an insulator) or remain finite (a metal) is thus tied to the existence of the spins. △ Less

Submitted 30 November, 2000; originally announced November 2000.

Journal ref: Phys. Rev. B 65, 041303(R) (2002)

Metal-insulator transition in a 2D electron gas: Equivalence of two approaches for determining the critical point

Authors: A. A. Shashkin, S. V. Kravchenko, T. M. Klapwijk

Abstract: The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation energy and vanishing nonlinearity of current-voltage characteristics as extrapolated from the insulating side. We find that in zero magnetic field (but not in… ▽ More The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation energy and vanishing nonlinearity of current-voltage characteristics as extrapolated from the insulating side. We find that in zero magnetic field (but not in the presence of a parallel magnetic field), both methods give equivalent results, adding support to the existence of a true zero-field metal-insulator transition. △ Less

Submitted 5 December, 2001; v1 submitted 12 September, 2000; originally announced September 2000.

Comments: As published

Journal ref: Phys. Rev. Lett. 87, 266402 (2001)

Indication of the ferromagnetic instability in a dilute two-dimensional electron system

Authors: A. A. Shashkin, S. V. Kravchenko, V. T. Dolgopolov, T. M. Klapwijk

Abstract: The magnetic field B_c, in which the electrons become fully spin-polarized, is found to be proportional to the deviation of the electron density from the zero-field metal-insulator transition in a two-dimensional electron system in silicon. The tendency of B_c to vanish at a finite electron density suggests a ferromagnetic instability in this strongly correlated electron system. The magnetic field B_c, in which the electrons become fully spin-polarized, is found to be proportional to the deviation of the electron density from the zero-field metal-insulator transition in a two-dimensional electron system in silicon. The tendency of B_c to vanish at a finite electron density suggests a ferromagnetic instability in this strongly correlated electron system. △ Less

Submitted 6 May, 2001; v1 submitted 25 July, 2000; originally announced July 2000.

Comments: 4 pages, postscript figures included. Revised version

Journal ref: Phys. Rev. Lett. 87, 086801 (2001)

Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon

Authors: S. V. Kravchenko, A. A. Shashkin, David A. Bloore, T. M. Klapwijk

Abstract: We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancem… ▽ More We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition. △ Less

Submitted 3 July, 2000; originally announced July 2000.

Comments: 4 pages, postscript figures included

Journal ref: Solid State Commun. 116, 495 (2000)