Showing 1–33 of 33 results for author: Kou, L

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First Principle and Deep Learning Molecular Dynamics Simulations

Authors: Dongyu Bai, Yihan Nie, **g Shang, Minghao Liu, Yang Yang, Haifei Zhan, Liangzhi Kou, Yuantong Gu

Abstract: Complex strain status can exist in 2D materials during their synthesis process, resulting in significant impacts on the physical and chemical properties. Despite their prevalence in experiments, their influence on the material properties and the corresponding mechanism are often understudied due to the lack of effective simulation methods. In this work, we investigated the effects of bending, ripp… ▽ More Complex strain status can exist in 2D materials during their synthesis process, resulting in significant impacts on the physical and chemical properties. Despite their prevalence in experiments, their influence on the material properties and the corresponding mechanism are often understudied due to the lack of effective simulation methods. In this work, we investigated the effects of bending, rippling, and bubbling on the ferroelectric domains in In2Se3 monolayer by density functional theory (DFT) and deep learning molecular dynamics (DLMD) simulations. The analysis of the tube model shows that bending deformation imparts asymmetry into the system, and the polarization direction tends to orient towards the tensile side, which has a lower energy state than the opposite polarization direction. The energy barrier for polarization switching can be reduced by compressive strain according DFT results. The dynamics of the polarization switching is investigated by the DLMD simulations. The influence of curvature and temperature on the switching time follows the Arrhenius-style function. For the complex strain status in the rippling and bubbling model, the lifetime of the local transient polarization is analyzed by the autocorrelation function, and the size of the stable polarization domain is identified. Local curvature and temperature can influence the local polarization dynamics following the proposed Arrhenius-style equation. Through cross-scale simulations, this study demonstrates the capability of deep-learning potentials in simulating polarization for ferroelectric materials. It further reveals the potential to manipulate local polarization in ferroelectric materials through strain engineering. △ Less

Submitted 22 August, 2023; originally announced August 2023.

Magnetic Electrides: High-Throughput Material Screening, Intriguing Properties, and Applications

Authors: Xiaoming Zhang, Weizhen Meng, Ying Liu, Xuefang Dai, Guodong Liu, Liangzhi Kou

Abstract: Electrides are a unique class of electron-rich materials where excess electrons are localized in interstitial lattice sites as anions, leading to a range of unique properties and applications. While hundreds of electrides have been discovered in recent years, magnetic electrides have received limited attention, with few investigations into their fundamental physics and practical applications. In t… ▽ More Electrides are a unique class of electron-rich materials where excess electrons are localized in interstitial lattice sites as anions, leading to a range of unique properties and applications. While hundreds of electrides have been discovered in recent years, magnetic electrides have received limited attention, with few investigations into their fundamental physics and practical applications. In this work, 51 magnetic electrides (12 antiferromagnetic, 13 ferromagnetic, and 26 interstitial-magnetic) were identified using high-throughput computational screening methods and the latest Material Project database. Based on their compositions, these magnetic electrides can be classified as magnetic semiconductors, metals, or half-metals, each with unique topological states and excellent catalytic performance for N2 fixation due to their low work functions and excess electrons. The novel properties of magnetic electrides suggest potential applications in spintronics, topological electronics, electron emission, and as high-performance catalysts. This work marks the beginning of a new era in the identification, investigation, and practical applications of magnetic electrides. △ Less

Submitted 16 March, 2023; originally announced March 2023.

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

Authors: Ting Zhang, Xilong Xu, Baibiao Huang, Ying Dai, Liangzhi Kou, Yandong Ma

Abstract: Layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling between Berry curvature and layer degree of freedom, is of importance for both fundamental physics and device applications. Nonetheless, the current research paradigm is rooted in topological systems, rendering such phenomenon rather scarce. Here, through model analysis, we propose an alternative, but general mechanism to re… ▽ More Layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling between Berry curvature and layer degree of freedom, is of importance for both fundamental physics and device applications. Nonetheless, the current research paradigm is rooted in topological systems, rendering such phenomenon rather scarce. Here, through model analysis, we propose an alternative, but general mechanism to realize the LP-AHE in valleytronic van der Waals bilayers by interlayer sliding. The interaction between the out-of-plane ferroelectricity and A-type antiferromagnetism gives rise to the layer-locked Berry curvature and thus the long-sought LP-AHE in the bilayer systems. The LP-AHE can be strongly coupled with sliding ferroelectricity, to enable ferroelectrically controllable and reversible. The mechanism is demonstrated in a series of real valleytronic materials, including bilayer VSi2P4, VSi2N4, FeCl2, RuBr2 and VClBr. The new mechanism and phenomena provide a significant new direction to realize LP-AHE and explore its application in electronics. △ Less

Submitted 23 June, 2022; originally announced June 2022.

Ferroelectric materials and their applications in green catalysis

Authors: Weitong Ding, Xiao Tang, Wei Li, Liangzhi Kou, Lei Liu

Abstract: The demand for renewable and environmentally friendly energy source has attracted extensive research on high performance catalysts. Ferroelectrics which are a class of materials with a switchable polarization are the unique and promising catalyst candidates due to the significant effects of polarization on surfaces physical and chemical properties. The band bending at the ferroelectric/semiconduct… ▽ More The demand for renewable and environmentally friendly energy source has attracted extensive research on high performance catalysts. Ferroelectrics which are a class of materials with a switchable polarization are the unique and promising catalyst candidates due to the significant effects of polarization on surfaces physical and chemical properties. The band bending at the ferroelectric/semiconductor interface induced by the polarization flip promotes the charge separation and transfer, there by enhancing the photocatalytic performance. More importantly, the reactants can be selectively adsorbed on the surface of the ferroelectric materials depending on the polarization direction, which can effectively lift the basic limitations as imposed by Sabatier principle on catalytic activity. This review summarizes the latest developments of ferroelectric materials, and introduces the ferroelectric-related catalytic application. The possible research directions of 2D ferroelectric materials in chemical catalysis is discussed at the end. The review is expected to inspire the extensive research interests from physical, chemical and material science communities. △ Less

Submitted 29 November, 2021; originally announced November 2021.

Multiple-Fold Fermions and Topological Fermi Arcs Induced Catalytic Enhancement in Nanoporous Electride C12A7

Authors: Weizhen Meng, Xiaoming Zhang, Ying Liu, Xuefang Dai, Guodong Liu, Liangzhi Kou

Abstract: Topological materials are recently regarded as the idea catalysts due to the protected surface metallic states and high carrier mobility, however the fundamental mechanism and the underlying relationship between the catalytic performance and topological states are in debate. Here, by means of symmetry analysis and first-principles calculations, we discover that the electride material of C12A7 host… ▽ More Topological materials are recently regarded as the idea catalysts due to the protected surface metallic states and high carrier mobility, however the fundamental mechanism and the underlying relationship between the catalytic performance and topological states are in debate. Here, by means of symmetry analysis and first-principles calculations, we discover that the electride material of C12A7 hosts the multiple-fold fermions due to the interstitial-electrons, with the sixfold- and fourfold- degenerate points locating at high symmetric points near the Fermi energy, which are identified as the underlying reason of the enhanced catalytic ability in C12A7-based catalysts. The multiple-fold fermions exhibit much longer Fermi arcs on the (001) surface than traditional Weyl/Dirac fermions, the surface is thus highly chemical active and possesses a low Gibbs free energy for the hydrogen evolution reaction. The underlying relationship between catalytic performance and the topological surface state is explicitly verified by artificially hole do**, external strain and similar electride without the Fermi arcs, where the Gibbs free energies are significantly increased when the Fermi arcs is shifted to higher energy level. This work offers a guiding principle for understanding catalytic nature of electrides and the topological quantum catalysts. △ Less

Submitted 19 August, 2021; v1 submitted 7 April, 2021; originally announced April 2021.

Journal ref: Adv. Sci. 2022, 2205940

Intertwined Ferroelectricity and Topological State in Two-Dimensional Multilayer

Authors: Yan Liang, Ning Mao, Ying Dai, Liangzhi Kou, Baibiao Huang, Yandong Ma

Abstract: The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to design the novel system is unclear and the feasible approach to achieve the coexistence of two parameter orders is absent. Here, we propose a general paradigm to des… ▽ More The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to design the novel system is unclear and the feasible approach to achieve the coexistence of two parameter orders is absent. Here, we propose a general paradigm to design 2D ferroelectric topological insulators by sliding topological multilayers on the basis of first-principles calculations. Taking trilayer Bi2Te3 as a model system, we show that in the van der Waals multilayer based 2D topological insulators, the in-plane and out-of-plane ferroelectricity can be induced through a specific interlayer sliding, to enable the coexistence of ferroelectric and topological orders. The strong coupling of the order parameters renders the topological states sensitive to polarization flip, realizing non-volatile ferroelectric control of topological properties. The revealed design-guideline and ferroelectric-topological coupling not only are useful for the fundamental research of the coupled ferroelectric and topological physics in 2D lattices, but also enable novel applications in nanodevices. △ Less

Submitted 14 February, 2021; originally announced February 2021.

Prediction of Intrinsic Triferroicity in Two-Dimensional Lattice

Authors: Shiying Shena, Yandong Ma, Xilong Xu, Baibiao Huang, Liangzhi Kou, Ying Dai

Abstract: Intrinsic triferroicity is essential and highly sought for novel device applications, such as high-density multistate data storage. So far, the intrinsic triferroicity has only been discussed in three-dimensional systems. Herein on basis of first-principles, we report the intrinsic triferroicity in two-dimensional lattice. Being exfoliatable from the layered bulk, single-layer FeO2H is shown to be… ▽ More Intrinsic triferroicity is essential and highly sought for novel device applications, such as high-density multistate data storage. So far, the intrinsic triferroicity has only been discussed in three-dimensional systems. Herein on basis of first-principles, we report the intrinsic triferroicity in two-dimensional lattice. Being exfoliatable from the layered bulk, single-layer FeO2H is shown to be an intrinsically triferroic semiconductor, presenting antiferromagnetism, ferroelasticity and ferroelectricity simultaneously. Moreover, the directional control of its ferroelectric polarization is achievable by 90° reversible ferroelastic switching. In addition, single-layer FeO2H is identified to harbor in-plane piezoelectric effect. The unveiled phenomena and mechanism of triferroics in this two-dimensional system not only broaden the scientific and technological impact of triferroics but also enable a wide range of nanodevice applications. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. B 103, 144101 (2021)

Two-dimensional Janus van der Waals heterojunctions: a review of recent research progresses

Authors: Lin Ju, Mei Bie, Xiwei Zhang, Xiangming Chen, Liangzhi Kou

Abstract: Two-dimensional Janus van der Waals (vdW) heterojunctions, referring to the junction containing at least one Janus material, are found to exhibit tuneable electronic structures, wide light adsorption spectra, controllable contact resistance, and sufficient redox potential due to the intrinsic polarization and unique interlayer coupling. These novel structures and properties are promising for the p… ▽ More Two-dimensional Janus van der Waals (vdW) heterojunctions, referring to the junction containing at least one Janus material, are found to exhibit tuneable electronic structures, wide light adsorption spectra, controllable contact resistance, and sufficient redox potential due to the intrinsic polarization and unique interlayer coupling. These novel structures and properties are promising for the potential applications in electronics and energy conversion devices. To provide a comprehensive picture about the research progress and guide the following investigations, here we summarize their fundamental properties of different types of two-dimensional Janus vdW heterostructures including electronic structure, interface contact and optical properties, and discuss the potential applications in electronics and energy conversion devices. The further challenges and possible research directions of the novel heterojunctions are discussed at the end of this review. △ Less

Submitted 27 September, 2020; originally announced September 2020.

Robust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure

Authors: **g Shang, Xiao Tang, Yuantong Gu, Arkady V. Krasheninnikov, Silvia Picozzi, Changfeng Chen, Liangzhi Kou

Abstract: Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adj… ▽ More Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM) decorated graphene layer via an FE induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in TM decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of FE controlled magnetism in 2D materials. △ Less

Submitted 6 May, 2020; originally announced May 2020.

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-FeCl2

Authors: Pei Zhaos, Yandong Ma, Hao Wang, Baibiao Huang, Liangzhi Kou, Ying Dai

Abstract: Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for realizing valleytronic devices. Here, on the basis of first-principles calculations, we show that single-layer FeCl2 exhibits a large spontaneous valley polarization (~… ▽ More Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for realizing valleytronic devices. Here, on the basis of first-principles calculations, we show that single-layer FeCl2 exhibits a large spontaneous valley polarization (~101 meV) arising from the broken time-reversal symmetry and spin-orbital coupling, which can be continuously tuned by varying the direction of magnetic crystalline. By employing the perturbation theory, the underlying physical mechanism is unveiled. Moreover, the coupling between valley degree of freedom and ferromagnetic order could generate a spin- and valley-polarized anomalous Hall current in the presence of the in-plane electric field, facilitating its experimental exploration and practical applications. △ Less

Submitted 10 March, 2020; originally announced March 2020.

Reversible Gas Sensing by Ferroelectric Switch and 2D Molecule Multiferroics in In2Se3 Monolayer

Authors: Xiao Tang, **g Shang, Yuantong Gu, Aijun Du, Liangzhi Kou

Abstract: Two-dimensional ferroelectrics are important quantum materials which have found novel application in nonvolatile memories, however, the effects of reversible polarization on chemical reactions and interaction with environments are rarely studied despite of its importance. Here, based on the first-principles calculations, we found distinct gas adsorption behaviors on the surfaces of ferroelectric I… ▽ More Two-dimensional ferroelectrics are important quantum materials which have found novel application in nonvolatile memories, however, the effects of reversible polarization on chemical reactions and interaction with environments are rarely studied despite of its importance. Here, based on the first-principles calculations, we found distinct gas adsorption behaviors on the surfaces of ferroelectric In2Se3 layer and the reversible gas caption and release controlled by ferroelectric switch. We rationalize the novel phenomena to the synergistic effect of the different electrostatic potential and electron transfer induced by band alignments between frontier molecular orbitals of gas and band edge states of substrate. Excitingly, the adsorption of paramagnetic gas molecules such as NO and NO2 can induce surface magnetism, which is also sensitive to ferroelectric polarization direction of In2Se3, indicating the application of In2Se3 as threshold magnetic sensors or switcher. Furthermore, it is suggested two NO molecules prefer to ferromagnetically couple with each other, the Curie temperature is polarization dependent which can reach up to 50K, leading to the long-sought 2D molecule multiferroics. The ferroelectric controllable adsorption behavior and molecule multiferroic feature will find extensive application in gas caption, selective catalytic reduction and spintronic device. △ Less

Submitted 3 December, 2019; originally announced December 2019.

Journal ref: J. Mater. Chem. A, 2020

Multiferroic Decorated Fe2O3 Monolayer Predicted from First Principles

Authors: **g Shang, Chun Li, Aijun Du, Ting Liao, Yuantong Gu, Yandong Ma, Liangzhi Kou, Changfeng Chen

Abstract: Two-dimensional (2D) multiferroics exhibit cross-control capacity between magnetic and electric responses in reduced spatial domain, making them well suited for next-generation nanoscale devices; however, progress has been slow in develo** materials with required characteristic properties. Here we identify by first-principles calculations robust 2D multiferroic behaviors in decorated Fe2O3 monol… ▽ More Two-dimensional (2D) multiferroics exhibit cross-control capacity between magnetic and electric responses in reduced spatial domain, making them well suited for next-generation nanoscale devices; however, progress has been slow in develo** materials with required characteristic properties. Here we identify by first-principles calculations robust 2D multiferroic behaviors in decorated Fe2O3 monolayer, showcasing N@Fe2O3 as a prototypical case, where ferroelectricity and ferromagnetism stem from the same origin, namely Fe d-orbit splitting induced by the Jahn-Teller distortion and associated crystal field changes. The resulting ferromagnetic and ferroelectric polarization can be effectively reversed and regulated by applied electric field or strain, offering efficient functionality. These findings establish strong materials phenomena and elucidate underlying physics mechanism in a family of truly 2D multiferroics that are highly promising for advanced device applications. △ Less

Submitted 13 May, 2020; v1 submitted 27 November, 2019; originally announced November 2019.

Comments: 4 figures

Two-Dimensional Ferroelastic Topological Insulators in Single-Layer Janus Transition Metal Dichalcogenides MSSe (M=Mo, W)

Authors: Yandong Ma, Liangzhi Kou, Baibiao Huang, Ying Dai, Thomas Heine

Abstract: Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using fir… ▽ More Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe (M=Mo, W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in nonvolatile memory devices. Moreover, their topological phases harbor sizeable nontrivial band gaps, which supports the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multi-purpose and controllable devices. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. B 98, 085420 (2018)

Discovery of a two-dimensional topological insulator in SiTe

Authors: Yandong Ma, Liangzhi Kou, Ying Dai, Thomas Heine

Abstract: Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against backscattering. Currently, the major challenge to further studies and possible applications is the lack of suitable materials, which should be with high feasibility of fab… ▽ More Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against backscattering. Currently, the major challenge to further studies and possible applications is the lack of suitable materials, which should be with high feasibility of fabrication and sizeable nontrivial gaps. Here, we demonstrate through first-principles calculations that SiTe 2D crystal is a promising 2D TI with a sizeable nontrivial gap of 0.220 eV. This material is dynamically and thermally stable. Most importantly, it could be easily exfoliated from its three-dimensional superlattice due to the weakly bonded layered structure. Moreover, strain engineering can effectively control its nontrivial gap and even induce a topological phase transition. Our results provide a realistic candidate for experimental explorations and potential applications of 2D TIs. △ Less

Submitted 31 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 94, 201104 (2016)

Borophane: Stable Two-dimensional Anisotropic Dirac Material with Ultrahigh Fermi Velocity

Authors: Lichun Xu, Aijun Du, Liangzhi Kou

Abstract: Recent synthesis of monolayer borophene (triangle boron monolayer) on the substrate opens the era of boron nanosheet (Science, 350, 1513, $\mathbf{2015}$), but the structural stability and novel physical properties are still open issues. Here we demonstrated borophene can be stabilized with fully surface hydrogenation, called as borophane, from first-principles calculations. Most interesting, it s… ▽ More Recent synthesis of monolayer borophene (triangle boron monolayer) on the substrate opens the era of boron nanosheet (Science, 350, 1513, $\mathbf{2015}$), but the structural stability and novel physical properties are still open issues. Here we demonstrated borophene can be stabilized with fully surface hydrogenation, called as borophane, from first-principles calculations. Most interesting, it shows that borophane has direction-dependent Dirac cones, which are mainly contributed by in-plane \emph{p$_{x}$} and \emph{p$_{y}$} orbitals of boron atoms. The Dirac fermions possess an ultrahigh Fermi velocity up to 3.0$\times$10$^{6}$ m/s, 4 times higher than that of graphene. The Young's modules are calculated to be 129 and 200 GPa$\cdot$nm along two different directions, which is comparable with steel. The ultrahigh Fermi velocity and high mechanical feature render borophane ideal for nanoelectronics applications. △ Less

Submitted 11 February, 2016; originally announced February 2016.

Superhigh moduli and tension-induced phase transition of monolayer gamma-boron at finite temperatures

Authors: Junhua Zhao, Zhaoyao Yang, Ning Wei, Liangzhi Kou

Abstract: Two dimensional (2D) gamma-boron (γ-B28) thin films have been firstly reported by the experiments of the chemical vapor deposition in the latest study [Tai et al., Angew. Chem. Int. Ed. 54, 1-6 (2015)]. However, their mechanical properties are still not clear. Here we predict the superhigh moduli (1460 GPa at 1 K and 744 GPa at 300 K) and the tension-induced phase transition of monolayer γ-B28 alo… ▽ More Two dimensional (2D) gamma-boron (γ-B28) thin films have been firstly reported by the experiments of the chemical vapor deposition in the latest study [Tai et al., Angew. Chem. Int. Ed. 54, 1-6 (2015)]. However, their mechanical properties are still not clear. Here we predict the superhigh moduli (1460 GPa at 1 K and 744 GPa at 300 K) and the tension-induced phase transition of monolayer γ-B28 along a zigzag direction for large deformations at finite temperatures using molecular dynamics (MD) simulations. The new phase can be kept stable after unloading process at these temperatures. The predicted mechanical properties are reasonable with our results from density functional theory. This study provides physical insights into the origins of the new phase transition of monolayer γ-B28 at finite temperatures. △ Less

Submitted 3 January, 2016; originally announced January 2016.

Comments: 18pages, 4 figures

Two-Dimensional Transition Metal Dichalcogenides with a Hexagonal Lattice: Room Temperature Quantum Spin Hall Insulators

Authors: Yandong Ma, Liangzhi Kou, Xiao Li, Ying Dai, Thomas Heine

Abstract: So far, several transition metal dichalcogenides (TMDCs) based two-dimensional (2D) topological insulators (TIs) have been discovered, all of them based on a tetragonal lattice. However, in 2D crystals, the hexagonal rather than the tetragonal symmetry is the most common motif. Here, based on first-principles calculations, we propose a new class of stable 2D TMDCs of composition MX2 (M=Mo, W, X=S,… ▽ More So far, several transition metal dichalcogenides (TMDCs) based two-dimensional (2D) topological insulators (TIs) have been discovered, all of them based on a tetragonal lattice. However, in 2D crystals, the hexagonal rather than the tetragonal symmetry is the most common motif. Here, based on first-principles calculations, we propose a new class of stable 2D TMDCs of composition MX2 (M=Mo, W, X=S, Se, Te) with a hexagonal lattice. They are all in the same stability range as other 2D TMDC allotropes that have been demonstrated experimentally, and they are identified to be practical 2D TIs with large band gaps ranging from 41 to 198 meV, making them suitable for applications at room-temperature. Besides, in contrast to tetragonal 2D TMDs, their hexagonal lattice will greatly facilitate the integration of theses novel TI states van-der-Waals crystals with other hexagonal or honeycomb materials, and thus provide a route for 2D-material-based devices for wider nanoelectronic and spintronic applications. The nontrivial band gaps of both WSe2 and WTe2 2D crystals are 198 meV, which are larger than that in any previously reported TMDC-based TIs. These large band gaps entirely stem from the strong spin-orbit coupling strength within the d orbitals of Mo/W atoms near the Fermi level. Our findings will significantly broaden the scientific and technological impact of both 2D TIs and TMDCs. △ Less

Submitted 10 December, 2015; originally announced December 2015.

Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells

Authors: Liujiang Zhou, ** Zhang, Zhiwen Zhuo, Liangzhi Kou, Wei Ma, Bin Shao, Aijun Du, Sheng Meng, Thomas Frauenheim

Abstract: Phosphorene, a new elemental two dimensional (2D) material recently isolated by mechanical exfoliation, holds the feature of a direct band gap of around 2.0 eV, overcoming graphene's weaknesses (zero band gap) to realize the potential application in optoelectronic devices. Constructing van der Waals heterostructures is an efficient approach to modulate the band structure, to advance the charge sep… ▽ More Phosphorene, a new elemental two dimensional (2D) material recently isolated by mechanical exfoliation, holds the feature of a direct band gap of around 2.0 eV, overcoming graphene's weaknesses (zero band gap) to realize the potential application in optoelectronic devices. Constructing van der Waals heterostructures is an efficient approach to modulate the band structure, to advance the charge separation efficiency, and thus to optimize the optoelectronic properties. Here, we theoretically investigated three type-II heterostructures based on perfect phosphorene and its doped monolayers interfaced with TiO$_2$(110) surface. Do** in phosphorene has a tunability on built-in potential, charge transfer, light absorbance, as well as electron dynamics, which helps to optimize the light absorption efficiency. Three excitonic solar cells (XSCs) based on the phosphorene$-$TiO$_2$ heterojunctions have been proposed, which exhibit high power conversion efficiencies dozens of times higher than conventional solar cells, comparable to MoS$_2$/WS$_2$ XSC. The nonadiabatic molecular dynamics within the time-dependent density functional theory framework shows ultrafast electron transfer time of 6.1$-$10.8 fs, and slow electron$-$hole recombination of 0.58$-$1.08 ps, yielding $>98\%$ quantum efficiency for charge separation, further guaranteeing the practical power conversion efficiencies in XSC. △ Less

Submitted 5 December, 2015; originally announced December 2015.

Tetragonal Bismuth Bilayer: A Stable and Robust Quantum Spin Hall Insulator

Authors: Liangzhi Kou, Xin Tan, Yandong Ma, Hassan Tahini, Liujiang Zhou, Ziqi Sun, Aijun Du, Changfeng Chen, Sean C Smith

Abstract: Topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here we predict by first-principles calculations a two-dimensional (2D) TI, also known as a quantum spin Hall (QSH) insulator, in a tetragonal bismuth bilayer (TB-B… ▽ More Topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here we predict by first-principles calculations a two-dimensional (2D) TI, also known as a quantum spin Hall (QSH) insulator, in a tetragonal bismuth bilayer (TB-Bi) structure that is dynamically and thermally stable based on phonon calculations and finite-temperature molecular dynamics simulations. Density functional theory and tight-binding calculations reveal a band inversion among the Bi-p orbits driven by the strong intrinsic spin-orbit coupling, producing a large nontrivial band gap, which can be effectively tuned by moderate strains. The helical gapless edge states exhibit a linear dispersion with a high Fermi velocity comparable to that of graphene, and the QSH phase remains robust on a NaCl substrate. These remarkable properties place TB-Bi among the most promising 2D TIs for high-speed spintronic devices, and the present results provide insights into the intriguing QSH phenomenon in this new Bi structure and offer guidance for its implementation in potential applications. △ Less

Submitted 26 October, 2015; originally announced October 2015.

Comments: Accepted by 2D Materials. arXiv admin note: text overlap with arXiv:1505.04277 by other authors

New Family of Quantum Spin Hall Insulators in Two-dimensional Transition-Metal Halide with Large Nontrivial Band Gaps

Authors: Liujiang Zhou, Liangzhi Kou, Yan Sun, Claudia Felser, Feiming Hu, Guangcun Shan, Sean C. Smith, Binghai Yan, Thomas Frauenheim

Abstract: Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from ultra-high vacuum and extremely low temperature. Thus, seeking for desirable QSH insulators with high feasibility of experimental preparation and large nontrivi… ▽ More Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from ultra-high vacuum and extremely low temperature. Thus, seeking for desirable QSH insulators with high feasibility of experimental preparation and large nontrivial gap is of great importance for wide applications in spintronics. Based on the first-principles calculations, we predict a novel family of two-dimensional (2D) QSH insulators in transition-metal halide MX (M = Zr, Hf; X = Cl, Br, and I) monolayers with large nontrivial gaps of 0.12$-$0.4 eV, comparable with bismuth (111) bilayer (0.2 eV), stanene (0.3 eV) and larger than ZrTe$_5$ (0.1 eV) monolayers and graphene-based sandwiched heterstructures (30$-$70 meV). Their corresponding 3D bulk materials are weak topological insulators from stacking QSH layers, and some of bulk compounds have already been synthesized in experiment. The mechanism for 2D QSH effect in this system originates from a novel d$-$d band inversion, which is different from conventional band inversion between s$-$s orbitals, or p$-$p orbitals. The realization of pure layered MX monolayers may be prepared by exfoliation from their 3D bulk phases, thus holding great promise for nanoscale device applications and stimulating further efforts on transition metal-based QSH materials. △ Less

Submitted 14 December, 2015; v1 submitted 20 October, 2015; originally announced October 2015.

Comments: 4 figures

Journal ref: Nano Lett., 2015, 15, 7867 (2015)

Towards rational design of catalysts supported on a topological insulator substrate

Authors: Liangzhi Kou, Chi-Yung Yam, Thomas Frauenheim, Binghai Yan

Abstract: Exotic and robust metallic surface states of topological insulators (TIs) have been expected to provide a promising platform for novel surface chemistry and catalysis. However, it is still an unprecedented field how TIs affect the activity of catalysts. In this work, we study the effects of topological surface states (TSSs) on the activity of transition metal clusters (Au, Ag, Cu, Pt, and Pd), whi… ▽ More Exotic and robust metallic surface states of topological insulators (TIs) have been expected to provide a promising platform for novel surface chemistry and catalysis. However, it is still an unprecedented field how TIs affect the activity of catalysts. In this work, we study the effects of topological surface states (TSSs) on the activity of transition metal clusters (Au, Ag, Cu, Pt, and Pd), which are supported on a TI Bi2Se3 substrate. It was found the adsorption energy of oxygen on the supported catalysts can be always enhanced due to the TSSs. However, it does not necessarily mean an increase of the activity in catalytic oxidation reaction. Rather, the enhanced adsorption behavior in the presence of TSSs exhibits dual effects, determined by the intrinsic reactivity of these catalysts with oxygen. For the Au case, the activity of catalytic oxidation can be improved because the intrinsic binding between Au and O is relatively weak. In contrast, a negative effect is found for the Pt and Pd clusters since the intrinsic binding of Pt and Pd with oxygen is too strong. We also found that the effect of TSSs on the activity of hydrogen evolution reaction (HER) is quite similar, i.e. the metals with original weak reactivity can gain a positive effect from TSSs. The present work can pave a way for more rational design and selection of catalysts when using TIs as substrates. △ Less

Submitted 5 September, 2015; originally announced September 2015.

Comments: submitted to ACS, 4 figures

Phosphorene: Fabrication, Properties and Applications

Authors: Liangzhi Kou, Changfeng Chen, Sean C. Smith

Abstract: Phosphorene, the single- or few-layer form of black phosphorus, was recently rediscovered as a twodimensional layered material holding great promise for applications in electronics and optoelectronics. Research into its fundamental properties and device applications has since seen exponential growth. In this Perspective, we review recent progress in phosphorene research, touching upon topics on fa… ▽ More Phosphorene, the single- or few-layer form of black phosphorus, was recently rediscovered as a twodimensional layered material holding great promise for applications in electronics and optoelectronics. Research into its fundamental properties and device applications has since seen exponential growth. In this Perspective, we review recent progress in phosphorene research, touching upon topics on fabrication, properties, and applications; we also discuss challenges and future research directions. We highlight the intrinsically anisotropic electronic, transport, optoelectronic, thermoelectric, and mechanical properties of phosphorene resulting from its puckered structure in contrast to those of graphene and transition-metal dichalcogenides. The facile fabrication and novel properties of phosphorene have inspired design and demonstration of new nanodevices; however, further progress hinges on resolutions to technical obstructions like surface degradation effects and non-scalable fabrication techniques. We also briefly describe the latest developments of more sophisticated design concepts and implementation schemes that address some of the challenges in phosphorene research. It is expected that this fascinating material will continue to offer tremendous opportunities for research and development for the foreseeable future. △ Less

Submitted 18 June, 2015; originally announced June 2015.

Comments: invited perspective for JPCL

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Authors: Yandong Ma, Liangzhi Kou, Ying Dai, Thomas Heine

Abstract: Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of first-principles calculations, we predict a family of robust 2D TIs in monolayer square transition metal dichalcogenides (MoS2, MoSe2, MoTe2, WS2, WSe2, and WT… ▽ More Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of first-principles calculations, we predict a family of robust 2D TIs in monolayer square transition metal dichalcogenides (MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2). Sizeable intrinsic nontrivial bulk band gaps ranging from 24 to 187 meV are obtained, guarantying the quantum spin Hall (QSH) effect observable at room temperature in these new 2D TIs. Significantly different from most known 2D TIs with comparable band gaps, these sizeable energy gaps originate from the strong spin-orbit interaction related to the pure d electrons of the Mo/W atoms around the Fermi level. A single pair of topologically protected helical edge states is established for the edge of these systems with the Dirac point locating in the middle of the bulk band gap, and their topologically nontrivial states are also confirmed with nontrivial topological invariant Z2 = 1. More interestingly, by controlling the applied strain, a topological quantum phase transition between a QSH phase and a metallic phase or a trivial insulating phase can be realized in these 2D materials, and the detailed topological phase diagram is established. △ Less

Submitted 1 April, 2015; originally announced April 2015.

Comments: 15 pages,4 figures

Journal ref: Phys. Rev. B 92, 085427 (2015)

Controllable magnetic correlation between two impurities by spin-orbit coupling in graphene

Authors: F. M. Hu, Liangzhi Kou, Thomas Frauenheim

Abstract: Two magnetic impurities on the edge of a zigzag graphene nanoribbon strongly interact with each other via indirect coupling, which can be mediated by conducting carriers. By means of Quantum Monte Carlo (QMC) simulations, we find that the spin-orbit coupling $λ$ and the chemical potential $μ$ in system can be used to drive the transition of local-spin exchange from ferromagnetism to anti-ferromagn… ▽ More Two magnetic impurities on the edge of a zigzag graphene nanoribbon strongly interact with each other via indirect coupling, which can be mediated by conducting carriers. By means of Quantum Monte Carlo (QMC) simulations, we find that the spin-orbit coupling $λ$ and the chemical potential $μ$ in system can be used to drive the transition of local-spin exchange from ferromagnetism to anti-ferromagnetism. Since the tunable ranges for $λ$ and $μ$ in graphene are experimentally reachable, we thus open the possibilities for its device application. The symmetry in spatial distribution is broken by the vertical and the transversal spin-spin correlations due to the effect of spin-orbit coupling, leading to the spatial anisotropy of spin exchange, which distinguish our findings from the case in normal Fermi liquid. △ Less

Submitted 6 March, 2015; originally announced March 2015.

Comments: 7 pages, 3 figures and 1 table. This paper has been accepted in Scientific Reports

Two-Dimensional Inversion Asymmetric Topological Insulators in Functionalized III-Bi Bilayers

Authors: Yandong Ma, Liangzhi Kou, Binghai Yan, Chengwang Niu, Ying Dai, Thomas Heine

Abstract: The search for inversion asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so for only a few IATIs have been discovered and there is no IATI exhibiting a large band gap exceeding 0.6 eV. Using first-principles calculations, we predict a series of new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs preserve extra… ▽ More The search for inversion asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so for only a few IATIs have been discovered and there is no IATI exhibiting a large band gap exceeding 0.6 eV. Using first-principles calculations, we predict a series of new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs preserve extraordinary large bulk band gaps which are well above room-temperature, allowing for viable applications in room-temperature spintronic devices. More importantly, most of these systems display large bulk band gaps that far exceed 0.6 eV and, part of them even are up to ~1 eV, which are larger than any IATIs ever reported. The nontrivial topological situation in these systems is confirmed by the identified band inversion of the band structures and an explicit demonstration of the topological edge states. Interestingly, the nontrivial band order characteristics are intrinsic to most of these materials and are not subject to spin-orbit coupling. Owning to their asymmetric structures, remarkable Rashba spin splitting is produced in both the valence and conduction bands of these systems. These predictions strongly revive these new systems as excellent candidates for IATI-based novel applications. △ Less

Submitted 28 January, 2015; originally announced January 2015.

Comments: 17 pages,5figures

Journal ref: Phys. Rev. B 91, 235306 (2015)

Anisotropic Ripple Deformation in Phosphorene

Authors: Liangzhi Kou, Yandong Ma, Sean C. Smith, Changfeng Chen

Abstract: Two-dimensional materials tend to become crumpled according to the Mermin-Wagner theorem, and the resulting ripple deformation may significantly influence electronic properties as observed in graphene and MoS2. Here we unveil by first-principles calculations a new, highly anisotropic ripple pattern in phosphorene, a monolayer black phosphorus, where compression induced ripple deformation occurs on… ▽ More Two-dimensional materials tend to become crumpled according to the Mermin-Wagner theorem, and the resulting ripple deformation may significantly influence electronic properties as observed in graphene and MoS2. Here we unveil by first-principles calculations a new, highly anisotropic ripple pattern in phosphorene, a monolayer black phosphorus, where compression induced ripple deformation occurs only along the zigzag direction in the strain range up to 10%, but not the armchair direction. This direction-selective ripple deformation mode in phosphorene stems from its puckered structure with coupled hinge-like bonding configurations and the resulting anisotropic Poisson ratio. We also construct an analytical model using classical elasticity theory for ripple deformation in phosphorene under arbitrary strain. The present results offer new insights into the mechanisms governing the structural and electronic properties of phosphorene crucial to its device applications. △ Less

Submitted 8 April, 2015; v1 submitted 23 December, 2014; originally announced December 2014.

Comments: J. Phys. Chem. Lett. 2015

Quantum spin Hall states in graphene interacting with WS$_2$ or WSe$_2$

Authors: T. P. Kaloni, L. Kou, T. Frauenheim, U. Schwingenschlögl

Abstract: In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenides results in quantum spin Hall states in the absence o… ▽ More In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenides results in quantum spin Hall states in the absence of a magnetic field. △ Less

Submitted 1 December, 2014; originally announced December 2014.

Journal ref: Appl. Phys. Lett. 105, 233112 (2014)

New Family of Robust 2D Topological Insulators in van der Waals Heterostructures

Authors: Liangzhi Kou, Shu-Chun Wu, Claudia Felser, Thomas Frauenheim, Changfeng Chen, Binghai Yan

Abstract: We predict a new family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X=Cl, Br and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity induced new topological states. First principles calculations reveal intrinsic topologically nontrivial b… ▽ More We predict a new family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X=Cl, Br and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity induced new topological states. First principles calculations reveal intrinsic topologically nontrivial bulk energy gaps as large as 70-80 meV, which can be further enhanced up to 120 meV by compression. The strong spin-orbit coupling in BiTeX has a significant influence on the graphene Dirac states, resulting in the topologically nontrivial band structure, which is confirmed by calculated nontrivial Z2 index and an explicit demonstration of metallic edge states. Such heterostructures offer an unique Dirac transport system that combines the 2D Dirac states from graphene and 1D Dirac edge states from the topological insulator, and it offers new ideas for innovative device designs. △ Less

Submitted 12 June, 2014; originally announced June 2014.

Journal ref: ACS Nano, 8, 10448, 2014

Phosphorene as a superior gas sensor: Selective adsorption and distinct I-V response

Authors: Liangzhi Kou, Thomas Frauenheim, Changfeng Chen

Abstract: Recent reports on the fabrication of phosphorene, i.e., mono- or few-layer black phosphorus, have raised exciting prospects of an outstanding two-dimensional (2D) material that exhibits excellent properties for nanodevice applications. Here we study by first-principles calculations the adsorption of CO, CO2, NH3, NO and NO2 gas molecules on a mono-layer phosphorene. Our results predict superior se… ▽ More Recent reports on the fabrication of phosphorene, i.e., mono- or few-layer black phosphorus, have raised exciting prospects of an outstanding two-dimensional (2D) material that exhibits excellent properties for nanodevice applications. Here we study by first-principles calculations the adsorption of CO, CO2, NH3, NO and NO2 gas molecules on a mono-layer phosphorene. Our results predict superior sensing performance of phosphorene that rivals or even surpasses other 2D materials such as graphene and MoS2. We determine the optimal adsorption positions of these molecules on the phosphorene and identify molecular do**, i.e., charge transfer between the molecules and phosphorene, as the driving mechanism for the high adsorption strength. We further calculated the current-voltage (I-V) relation using a non-equilibrium Greens function (NEGF) formalism. The transport features show large (one to two orders of magnitude) anisotropy along different (armchair or zigzag) directions, which is consistent with the anisotropic electronic band structure of phosphorene. Remarkably, the I-V relation exhibits distinct responses with a marked change of the I-V relation along either the armchair or the zigzag directions depending on the type of molecules. Such selectivity and sensitivity to adsorption makes phosphorene a superior gas sensor that promises wide-ranging applications. △ Less

Submitted 10 June, 2014; originally announced June 2014.

Comments: 5 figures

Opening Band Gap without Breaking Lattice Symmetry: A New Route toward Robust Graphene-Based Nanoelectronics

Authors: Liangzhi Kou, Feiming Hu, Binghai Yan, Thomas Frauenheim, Changfeng Chen

Abstract: Develo** graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or asymmetric do** of graphene layers. Here we introduce a new design strategy that places a bilayer graphene sheet sandwiched between two cladding layers of material… ▽ More Develo** graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or asymmetric do** of graphene layers. Here we introduce a new design strategy that places a bilayer graphene sheet sandwiched between two cladding layers of materials that possess strong spin-orbit coupling (e.g., Bi2Te3). Our ab initio and tight-binding calculations show that proximity enhanced spin-orbit coupling effect opens a large (44 meV) band gap in bilayer graphene without breaking its lattice symmetry, and the band gap can be effectively tuned by interlayer stacking pattern and significantly enhanced by interlayer compression. The feasibility of this quantum-well structure is demonstrated by recent experimental realization of high-quality heterojunctions between graphene and Bi2Te3, and this design also conforms to existing fabrication techniques in the semiconductor industry. The proposed quantum-well structure is expected to be especially robust since it does not require an external power supply to open and maintain a band gap, and the cladding layers provide protection against environmental degradation of the graphene layer in its device applications. △ Less

Submitted 26 February, 2014; originally announced February 2014.

Strain Engineering of Selective Chemical Adsorption on Monolayer MoS_2

Authors: Liangzhi Kou, Aijun Du, Changfeng Chen, Thomas Frauenheim

Abstract: Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the property of the host material. Recent studies discovered that single and multilayer molybdenum disulfide (MoS_2) films are ultra sensitive to several important environmental molecules. Here we report… ▽ More Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the property of the host material. Recent studies discovered that single and multilayer molybdenum disulfide (MoS_2) films are ultra sensitive to several important environmental molecules. Here we report new findings from ab initio calculations that reveal substantially enhanced adsorption of NO and NH3 on strained monolyaer MoS2 with significant impact on the properties of the adsorbates and MoS2 layer. The magnetic moment of adsobed NO can be turned between 0 and 1 uB, strain also induces an electronic phase transition between half-metal and metal. Adsorption of NH3 weakens the MoS2 layer considerably, which explains the large discrepacy between the experimentally measured strength and breaking strain of MoS2 film from previous theoretical predictions. On the other hand, adsorption of NO2, CO and CO2 is insensitive to the strain condition in the MoS2 layer. This contrasting behavior allows sensitive strain engineering of selective chemical adsorption on MoS2 with effective tuning of mechanical, electronic and magnetic properties. These result suggest new design strategies for constructing MoS2 based ultrahigh sensitivity nanoscale sensor and electromechanical devices. △ Less

Submitted 20 December, 2013; originally announced December 2013.

Comments: 4 figures

Journal ref: Nanoscale 6, 5156-5161, 2014

Graphene-based topological insulator with an intrinsic bulk band gap above room temperature

Authors: Liangzhi Kou, Binghai Yan, Feiming Hu, Shu-Chun Wu, Tim O. Wehling, Claudia Felser, Changfeng Chen, Thomas Frauenheim

Abstract: Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk… ▽ More Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI comprising a graphene layer sandwiched between two Bi2Se3 slabs that exhibits a large intrinsic bulk band gap of 30 to 50 meV, making it viable for room-temperature applications. Distinct from previous strategies for enhancing the intrinsic spin-orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion between graphene Dirac bands and Bi2Se3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of smooth graphene/Bi2Se3 interfaces demonstrates feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications. △ Less

Submitted 9 October, 2013; originally announced October 2013.

Comments: 3 figures, 1 table

Journal ref: Nano letters 13, 6251, 2013

Proximity Enhanced Quantum Spin Hall State in Graphene

Authors: Liangzhi Kou, Feiming Hu, Binghai Yan, Tim Wehling, Claudia Felser, Thomas Frauenheim, Changfeng Chen

Abstract: Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin-orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of t… ▽ More Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin-orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of the TI energy gap in the graphene layer that is sandwiched between thin slabs of Sb2Te3 (or MoTe2). This gap (1.5 meV) is accessible by existing experimental techniques, and it can be further enhanced by tuning the interlayer distance via compression. We reveal by a tight-binding study that the QSH state in graphene is driven by the Kane-Mele interaction in competition with Kekulé deformation and symmetry breaking. The present work identifies a new family of graphene-based TIs with an observable and controllable bulk energy gap in the graphene layer, thus opening a new avenue for direct verification and exploration of the long-sought QSH effect in graphene. △ Less

Submitted 26 February, 2015; v1 submitted 25 September, 2013; originally announced September 2013.

Comments: 4 figures in Carbon, 2015

Journal ref: Carbon, 87, 418, 2015