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Element-specific and high-bandwidth ferromagnetic resonance spectroscopy with a coherent, extreme ultraviolet (EUV) source
Authors:
Michael Tanksalvala,
Anthony Kos,
Jacob Wisser,
Scott Diddams,
Hans T. Nembach,
Justin M. Shaw
Abstract:
We applied a tabletop, ultrafast, high-harmonic generation (HHG) source to measure the element-specific ferromagnetic resonance (FMR) in ultra-thin magnetic alloys and multilayers on an opaque Si substrate. We demonstrate a continuous wave bandwidth of 62 GHz, with promise to extend to 100 GHz or higher. This laboratory-scale instrument detects the FMR using ultrafast, extreme ultraviolet (EUV) li…
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We applied a tabletop, ultrafast, high-harmonic generation (HHG) source to measure the element-specific ferromagnetic resonance (FMR) in ultra-thin magnetic alloys and multilayers on an opaque Si substrate. We demonstrate a continuous wave bandwidth of 62 GHz, with promise to extend to 100 GHz or higher. This laboratory-scale instrument detects the FMR using ultrafast, extreme ultraviolet (EUV) light, with photon energies spanning the M-edges of most relevant magnetic elements. An RF frequency comb generator is used to produce a microwave excitation that is intrinsically synchronized to the EUV pulses with a timing jitter of 1.1 ps or better. We apply this system to measure the dynamics in a multilayer system as well as Ni-Fe and Co-Fe alloys. Since this instrument operates in reflection-mode, it is a milestone toward measuring and imaging the dynamics of the magnetic state and spin transport of active devices on arbitrary and opaque substrates. The higher bandwidth also enables measurements of materials with high magnetic anisotropy, as well as ferrimagnets, antiferromagnets, and short-wavelength (high wavevector) spinwaves in nanostructures or nanodevices. Furthermore, the coherence and short wavelength of the EUV will enable extending these studies using dynamic nanoscale lensless imaging techniques such as coherent diffractive imaging, ptychography, and holography.
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Submitted 23 April, 2024; v1 submitted 1 February, 2024;
originally announced February 2024.
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Atomic resolution interface structure and vertical current injection in highly uniform $MoS_{2}$ heterojunctions with bulk GaN
Authors:
F. Giannazzo,
S. E. Panasci,
E. Schilirò,
G. Greco,
F. Roccaforte,
G. Sfuncia,
G. Nicotra,
M. Cannas,
S. Agnello,
E. Frayssinet,
Y. Cordier,
A. Michon,
A. Koos,
B. Pécz
Abstract:
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sapphire substrates, whereas the growth of $MoS_{2}$ on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices.…
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The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sapphire substrates, whereas the growth of $MoS_{2}$ on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices. In this paper, we report the growth of ultrathin $MoS_{2}$ films, mostly composed by single-layers ($1L$), onto homoepitaxial $n-GaN$ on $n^{+}$ bulk substrates by sulfurization of a pre-deposited $MoO_{x}$ film. Highly uniform and conformal coverage of the $GaN$ surface was demonstrated by atomic force microscopy, while very low tensile strain (0.05%) and a significant $p^{+}$-type do** ($4.5 \times 10^{12} cm^{-2}$) of $1L-MoS_{2}$ was evaluated by Raman map**. Atomic resolution structural and compositional analyses by aberration-corrected electron microscopy revealed a nearly-ideal van der Waals interface between $MoS_{2}$ and the $Ga$-terminated $GaN$ crystal, where only the topmost $Ga$ atoms are affected by oxidation. Furthermore, the relevant lattice parameters of the $MoS_{2}/GaN$ heterojunction, such as the van der Waals gap, were measured with high precision. Finally, the vertical current injection across this 2D/3D heterojunction has been investigated by nanoscale current-voltage analyses performed by conductive atomic force microscopy, showing a rectifying behavior with an average turn-on voltage $V_{on}=1.7 V$ under forward bias, consistent with the expected band alignment at the interface between $p^{+}$ doped $1L-MoS_{2}$ and $n-GaN$.
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Submitted 19 May, 2023; v1 submitted 24 April, 2023;
originally announced April 2023.
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Dynamic strain in gold nanoparticle supported graphene induced by focused laser irradiation
Authors:
András Pálinkás,
Péter Kun,
Antal A. Koós,
Zoltán Osváth
Abstract:
Graphene on noble-metal nanostructures constitutes an attractive nanocomposite with possible applications in sensors or energy conversion. In this work we study the properties of hybrid graphene/gold nanoparticle structures by Raman spectroscopy and Scanning Probe Methods. The nanoparticles (NPs) were prepared by local annealing of gold thin films using focused laser beam. The method resulted in a…
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Graphene on noble-metal nanostructures constitutes an attractive nanocomposite with possible applications in sensors or energy conversion. In this work we study the properties of hybrid graphene/gold nanoparticle structures by Raman spectroscopy and Scanning Probe Methods. The nanoparticles (NPs) were prepared by local annealing of gold thin films using focused laser beam. The method resulted in a patterned surface, with NPs formed at arbitrarily chosen microscale areas. Graphene grown by chemical vapour deposition was transferred onto the prepared, closely spaced gold NPs. While we found that successive higher intensity (6 mW) laser irradiation increased gradually the do** and the defect concentration in SiO2 supported graphene, the same irradiation procedure did not induce such irreversible effects in the graphene supported by gold NPs. Moreover, the laser irradiation induced dynamic hydrostatic strain in the graphene on Au NPs, which turned out to be completely reversible. These results can have implications in the development of graphene/plasmonic nanoparticle based high temperature sensors operating in dynamic regimes.
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Submitted 12 June, 2018;
originally announced June 2018.
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A microwave interferometer of the Michelson-type to improve the dynamic range of broadband ferromagnetic resonance measurements
Authors:
Eric R. J. Edwards,
Anthony B. Kos,
Mathias Weiler,
Thomas J. Silva
Abstract:
We present a Michelson-type microwave interferometer for use in ferromagnetic resonance experiments. The interferometer is capable of broadband operation without manual adjustment of phase delay or amplitude attenuation. A prototype of the design shows significant improvement of the signal-to-noise ratio when compared to non-interferometric ferromagnetic resonance experiments. We demonstrate that…
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We present a Michelson-type microwave interferometer for use in ferromagnetic resonance experiments. The interferometer is capable of broadband operation without manual adjustment of phase delay or amplitude attenuation. A prototype of the design shows significant improvement of the signal-to-noise ratio when compared to non-interferometric ferromagnetic resonance experiments. We demonstrate that this increase in sensitivity can lead to a drastic increase in the data acquisition rate for hard-to-measure thin films that otherwise would require long integration times.
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Submitted 14 November, 2016; v1 submitted 20 July, 2016;
originally announced July 2016.
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Thermal Relaxation Rates of Magnetic Nanoparticles in the Presence of Magnetic Fields and Spin-Transfer Effects
Authors:
William Rippard,
Ranko Heindl,
Matthew Pufall,
Stephen Russek,
Anthony Kos
Abstract:
We have measured the relaxation time of a thermally unstable ferromagnetic nanoparticle incorporated into a magnetic tunnel junction (MTJ) as a function of applied magnetic field, voltage V (-0.38 V < V < +0.26 V), and temperatures (283 K< T< 363 K) . By analyzing the results within the framework of a modified Néel-Brown formalism we determine the effective attempt time of the nanoparticle and als…
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We have measured the relaxation time of a thermally unstable ferromagnetic nanoparticle incorporated into a magnetic tunnel junction (MTJ) as a function of applied magnetic field, voltage V (-0.38 V < V < +0.26 V), and temperatures (283 K< T< 363 K) . By analyzing the results within the framework of a modified Néel-Brown formalism we determine the effective attempt time of the nanoparticle and also the bias dependences of the in-plane and out-of-plane spin torques. There is a significant linear modification of the effective temperature with voltage due to the in-plane torque and a significant contribution of a "field like" torque that is quadratic with voltage. The methods presented here do not require complicated models for device heating or calibration procedures, but instead directly measure how temperature, field, and voltage influence the energy landscape and thermal fluctuations of a two-state system. These results should have significant implications for designs of future nanometer-scale magnetic random access memory elements and provide a straightforward methodology to determine these parameters in other MTJ device structures.
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Submitted 25 July, 2011;
originally announced July 2011.
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Time domain measurement of phase noise in a spin torque oscillator
Authors:
Mark W. Keller,
A. B. Kos,
T. J. Silva,
W. H. Rippard,
M. R. Pufall
Abstract:
We measure oscillator phase from the zero crossings of the voltage vs. time waveform of a spin torque nanocontact oscillating in a vortex mode. The power spectrum of the phase noise varies with Fourier frequency $f$ as $1/f^2$, consistent with frequency fluctuations driven by a thermal source. The linewidth implied by phase noise alone is about 70 % of that measured using a spectrum analyzer. A…
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We measure oscillator phase from the zero crossings of the voltage vs. time waveform of a spin torque nanocontact oscillating in a vortex mode. The power spectrum of the phase noise varies with Fourier frequency $f$ as $1/f^2$, consistent with frequency fluctuations driven by a thermal source. The linewidth implied by phase noise alone is about 70 % of that measured using a spectrum analyzer. A phase-locked loop reduces the phase noise for frequencies within its 3 MHz bandwidth.
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Submitted 7 April, 2009;
originally announced April 2009.
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Large angle magnetization dynamics measured by time-resolved ferromagnetic resonance
Authors:
Th. Gerrits,
M. L. Schneider,
A. B. Kos,
T. J. Silva
Abstract:
A time-resolved ferromagnetic resonance technique was used to investigate the magnetization dynamics of a 10 nm thin Permalloy film. The experiment consisted of a sequence of magnetic field pulses at a repetition rate equal to the magnetic systems resonance frequency. We compared data obtained by this technique with conventional pulsed inductive microwave magnetometry. The results for dam** an…
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A time-resolved ferromagnetic resonance technique was used to investigate the magnetization dynamics of a 10 nm thin Permalloy film. The experiment consisted of a sequence of magnetic field pulses at a repetition rate equal to the magnetic systems resonance frequency. We compared data obtained by this technique with conventional pulsed inductive microwave magnetometry. The results for dam** and frequency response obtained by these two different methods coincide in the limit of a small angle excitation. However, when applying large amplitude field pulses, the magnetization had a non-linear response. We speculate that one possible cause of the nonlinearity is related to self-amplification of incoherence, known as the Suhl instabilities.
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Submitted 30 August, 2005;
originally announced August 2005.
