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The Defects Genome of 2D Janus Transition Metal Dichalcogenides
Authors:
Mohammed Sayyad,
Jan Kopaczek,
Carmem M. Gilardoni,
Weiru Chen,
Yihuang Xiong,
Shize Yang,
Kenji Watanabe,
Takashi Taniguchi,
Robert Kudrawiec,
Geoffroy Hautier,
Mete Atature,
Sefaattin Tongay
Abstract:
Two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structure, broken-mirror symmetry, and consequent colossal polarisation field within the monolayer. While efforts have been made to achieve high-quality Janus monolayers, the existing methods rely on highly energetic processes…
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Two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structure, broken-mirror symmetry, and consequent colossal polarisation field within the monolayer. While efforts have been made to achieve high-quality Janus monolayers, the existing methods rely on highly energetic processes that introduce unwanted grain-boundary and point defects with still unexplored effects on the material's structural and excitonic properties Through High-resolution scanning transmission electron microscopy (HRSTEM), density functional theory (DFT), and optical spectroscopy measurements; this work introduces the most encountered and energetically stable point defects. It establishes their impact on the material's optical properties. HRSTEM studies show that the most energetically stable point defects are single (Vs and Vse) and double chalcogen vacancy (Vs-Vse), interstitial defects (Mi), and metal impurities (MW) and establish their structural characteristics. DFT further establishes their formation energies and related localized bands within the forbidden band. Cryogenic excitonic studies on h-BN-encapsulated Janus monolayers offer a clear correlation between these structural defects and observed emission features, which closely align with the results of the theory. The overall results introduce the defect genome of Janus TMDs as an essential guideline for assessing their structural quality and device properties.
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Submitted 10 March, 2024;
originally announced March 2024.
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Strain Anisotropy Driven Spontaneous Formation of Nanoscrolls from Two-Dimensional Janus Layers
Authors:
Mohammed Sayyad,
Ying Qin,
Jan Kopaczek,
Adway Gupta,
Naim Patoary,
Shantanu Sinha,
Emmie Benard,
Austin Davis,
Kentaro Yumigeta,
Cheng-Lun Wu,
Han Li,
Shize Yang,
Ivan Sanchez Esqueda,
Arunima Singh,
Sefaattin Tongay
Abstract:
Two-dimensional Janus transition metal dichalcogenides (TMDs) have attracted attention due to their emergent properties arising from broken mirror symmetry and self-driven polarisation fields. While it has been proposed that their vdW superlattices hold the key to achieving superior properties in piezoelectricity and photovoltiacs, available synthesis has ultimately limited their realisation. Here…
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Two-dimensional Janus transition metal dichalcogenides (TMDs) have attracted attention due to their emergent properties arising from broken mirror symmetry and self-driven polarisation fields. While it has been proposed that their vdW superlattices hold the key to achieving superior properties in piezoelectricity and photovoltiacs, available synthesis has ultimately limited their realisation. Here, we report the first packed vdW nanoscrolls made from Janus TMDs through a simple one-drop solution technique. Our results, including ab-initio simulations, show that the Bohr radius difference between the top sulphur and the bottom selenium atoms within Janus M_Se^S (M=Mo, W) results in a permanent compressive surface strain that acts as a nanoscroll formation catalyst after small liquid interaction. Unlike classical 2D layers, the surface strain in Janus TMDs can be engineered from compressive to tensile by placing larger Bohr radius atoms on top (M_S^Se) to yield inverted C scrolls. Detailed microscopy studies offer the first insights into their morphology and readily formed Moiré lattices. In contrast, spectroscopy and FETs studies establish their excitonic and device properties and highlight significant differences compared to 2D flat Janus TMDs. These results introduce the first polar Janus TMD nanoscrolls and introduce inherent strain-driven scrolling dynamics as a catalyst to create superlattices.
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Submitted 31 May, 2023;
originally announced June 2023.
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Identification of exciton complexes in a charge-tuneable Janus WSeS monolayer
Authors:
Matthew S. G. Feuer,
Alejandro R. -P. Montblanch,
Mohammed Sayyad,
Carola M. Purser,
Ying Qin,
Evgeny M. Alexeev,
Alisson R. Cadore,
Barbara L. T. Rosa,
James Kerfoot,
Elaheh Mostaani,
Radosław Kalęba,
Pranvera Kolari,
Jan Kopaczek,
Kenji Watanabe,
Takashi Taniguchi,
Andrea C. Ferrari,
Dhiren M. Kara,
Sefaattin Tongay,
Mete Atatüre
Abstract:
Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photolumine…
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Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photoluminescence (>15 meV) spectra obfuscating their excitonic origin. Here, we identify the neutral, and negatively charged inter- and intravalley exciton transitions in Janus WSeS monolayer with $\sim 6$ meV optical linewidth. We combine a recently developed synthesis technique, with the integration of Janus monolayers into vertical heterostructures, allowing do** control. Further, magneto-optic measurements indicate that monolayer WSeS has a direct bandgap at the K points. This work provides the foundation for applications such as nanoscale sensing, which relies on resolving excitonic energy shifts, and photo-voltaic energy harvesting, which requires efficient creation of long-lived excitons and integration into vertical heterostructures.
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Submitted 13 October, 2022;
originally announced October 2022.
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Strong substrate strain effects in multilayered WS2 revealed by high-pressure optical measurements
Authors:
Robert Oliva,
Tomasz Woźniak,
Paulo E. Faria Junior,
Filip Dybała,
Jan Kopaczek,
Jaroslav Fabian,
Paweł Scharoch,
Robert Kudrawiec
Abstract:
The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculations based on density functional theory and the effective Bethe-Salpeter equation with high-pressure optical measurements in order to thoroughly describe the effect of strain and dielectric environment onto the electroni…
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The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculations based on density functional theory and the effective Bethe-Salpeter equation with high-pressure optical measurements in order to thoroughly describe the effect of strain and dielectric environment onto the electronic band structure and optical properties of a few-layered transition metal dichalcogenide. Our results show that WS2 remains fully adhered to the substrate at least up to a -0.6% in-plane compressive strain for a wide range of substrate materials. We provide a useful model to describe effect of strain on the optical gap energy. The corresponding experimentally-determined out-of-plane and in-plane stress gauge factors for WS2 monolayers are -8 and 24 meV/GPa, respectively. The exceptionally large in-plane gauge factor confirm transition metal dichalcogenides as very promising candidates for flexible functionalities. Finally, we discuss the pressure evolution of an optical transition closely-lying to the A exciton for bulk WS2 as well as the direct-to-indirect transition of the monolayer upon compression.
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Submitted 31 March, 2022; v1 submitted 17 February, 2022;
originally announced February 2022.
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GaSbBi alloys and heterostructures: fabrication and properties
Authors:
O. Delorme,
L. Cerutti,
R. Kudrawiec,
Esperanza Luna,
J. Kopaczek,
M. Gladysiewicz,
A. Trampert,
E. Tournié,
J. -B. Rodriguez
Abstract:
Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 $μ$m). However, due to its large size, Bi does not readily incorporate into III…
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Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 $μ$m). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.
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Submitted 24 October, 2019;
originally announced October 2019.
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Pressure dependence of direct optical transitions in ReS2 and ReSe2
Authors:
R. Oliva,
M. Laurien,
F. Dybala,
J. Kopaczek,
Y. Quin,
S. Tongay,
O. Rubel,
R. Kudrawiec
Abstract:
We present an experimental and theoretical study of the electronic band structure of ReS2 and ReSe2 at high hydrostatic pressures. The experiments are performed by photoreflectance spectroscopy and are analyzed in terms of ab initio calculations within the density functional theory. Experimental pressure coefficients for the two most dominant excitonic transitions are obtained and compared with th…
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We present an experimental and theoretical study of the electronic band structure of ReS2 and ReSe2 at high hydrostatic pressures. The experiments are performed by photoreflectance spectroscopy and are analyzed in terms of ab initio calculations within the density functional theory. Experimental pressure coefficients for the two most dominant excitonic transitions are obtained and compared with those predicted by the calculations. We assign the transitions to the Z k-point of the Brillouin zone and other k-points located away from highsymmetry points. The origin of the pressure coefficients of the measured direct transitions is discussed in terms of orbital analysis of the electronic structure and van der Waals interlayer interaction. The anisotropic optical properties are studied at high pressure by means of polarization-resolved photoreflectance measurements.
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Submitted 7 December, 2018;
originally announced December 2018.
