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Intercalation-induced states at the Fermi level and the coupling of intercalated magnetic ions to conducting layers in Ni$_{1/3}$NbS$_2$
Authors:
Yuki Utsumi Boucher,
Izabela Biało,
Mateusz A. Gala,
Wojciech Tabiś,
Marcin Rosmus,
Natalia Olszowska,
Jacek J. Kolodziej,
Bruno Gudac,
Mario Novak,
Naveen Kumar Chogondahalli Muniraju,
Ivo Batistić,
Neven Barišić,
Petar Popčević,
Eduard Tutiš
Abstract:
The magnetic sublayers introduced by intercalation into the host transition-metal dichalcogenide (TMD) are known to produce various magnetic states. The magnetic sublayers and their magnetic ordering strongly modify the electronic coupling between layers of the host compound. Understanding the roots of this variability is a significant challenge. Here we employ the angle-resolved photoelectron spe…
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The magnetic sublayers introduced by intercalation into the host transition-metal dichalcogenide (TMD) are known to produce various magnetic states. The magnetic sublayers and their magnetic ordering strongly modify the electronic coupling between layers of the host compound. Understanding the roots of this variability is a significant challenge. Here we employ the angle-resolved photoelectron spectroscopy at various photon energies, the {\it ab initio} electronic structure calculations, and modeling to address the particular case of Ni-intercalate, Ni$_{1/3}$NbS$_2$. We find that the bands around the Fermi level bear the signature of a strong yet unusual hybridization between NbS$_2$ conduction band states and the Ni 3$d$ orbitals. The hybridization between metallic NbS$_2$ layers is almost entirely suppressed in the central part of the Brillouin zone, including the part of the Fermi surface around the $\mathrmΓ$ point. Simultaneously, it gets very pronounced towards the zone edges. It is shown that this behavior is the consequence of the rather exceptional, {\it symmetry imposed}, spatially strongly varying, {\it zero total} hybridization between relevant Ni magnetic orbitals and the neighboring Nb orbitals that constitute the metallic bands. We also report the presence of the so-called $β$-feature, discovered only recently in two other magnetic intercalates with very different magnetic orderings. In Ni$_{1/3}$NbS$_2$, the feature shows only at particular photon energies, indicating its bulk origin. Common to prior observations, it appears as a series of very shallow electron pockets at the Fermi level, positioned along the edge of the Brillouin zone. Unforeseen by {\it ab initio} electronic calculations, and its origin still unresolved, the feature appears to be a robust consequence of the intercalation of 2H-NbS$_2$ with magnetic ions.
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Submitted 15 February, 2024; v1 submitted 11 January, 2024;
originally announced January 2024.
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Valley-Polarized quantum Hall phase in a strain-controlled Dirac system
Authors:
G. Krizman,
J. Bermejo-Ortiz,
T. Zakusylo,
M. Hajlaoui,
T. Takashiro,
M. Rosmus,
N. Olszowska,
J. J. Kolodziej,
G. Bauer,
Y. Guldner,
G. Springholz,
L. -A. de Vaulchier
Abstract:
In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band g…
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In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band gap, we observe a bipolar QH phase, heralded by the coexistence of hole and electron chiral edge states at distinct valleys in the same quantum well. This suggests that spatially overlaid counter-propagating chiral edge states emerging at different valleys do not interfere with each other.
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Submitted 4 January, 2024;
originally announced January 2024.
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A Novel Ferroelectric Rashba Semiconductor
Authors:
Gauthier Krizman,
Tetiana Zakusylo,
Lakshmi Sajeev,
Mahdi Hajlaoui,
Takuya Takashiro,
Marcin Rosmus,
Natalia Olszowska,
Jacek J. Kolodziej,
Guenther Bauer,
Ondrej Caha,
Gunther Springholz
Abstract:
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the…
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Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb1-xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion is demonstrated by temperature dependent X-ray diffraction, and its effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. Our work defines Pb1- xGexTe as a high-potential FERSC system for spintronic applications.
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Submitted 19 October, 2023;
originally announced October 2023.
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Influence of Structural Defects on Charge Density Waves in 1T-TaS2
Authors:
I. Lutsyk,
K. Szalowski,
P. Krukowski,
P. Dabrowski,
M. Rogala,
W. Kozlowski,
M. Le Ster,
M. Piskorski,
D. A. Kowalczyk,
W. Rys,
R. Dunal,
A. Nadolska,
K. Toczek,
P. Przybysz,
E. Lacinska,
J. Binder,
A. Wysmolek,
N. Olszowska,
J. J. Kolodziej,
M. Gmitra,
T. Hattori,
Y. Kuwahara,
G. Bian,
T. -C. Chiang,
P. J. Kowalczyk
Abstract:
The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectivel…
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The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectively behaves as a dopant, leading to band bending and affecting multiple neighboring sites. While only one type of defect can be observed by STM topographic imaging, all defects are easily resolved by local density of states (LDOS) map** with STS. We correlate atomically-resolved STM periodicity of defect-free 1T-TaS2 to top sulfur atoms and introduce tiling of the surface using equiangular hexagon. DFT calculations (with included Coulomb interactions) are used to investigate the electronic structure by introducing sulfur vacancy or substituting sulfur with oxygen. The sulfur vacancy is characterized by metallic properties and is identified as an origin of one of observed experimentally defects. Whereas in the case of the latter, the oxidation of 1T-TaS2 is found to result in the loss of magnetic properties expected in defect-free material.
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Submitted 1 March, 2023;
originally announced March 2023.
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Topological Lifshitz transition in Weyl semimetal NbP decorated with heavy elements
Authors:
Ashutosh S Wadge,
Bogdan J Kowalski,
Carmine Autieri,
Przemysław Iwanowski,
Andrzej Hruban,
Natalia Olszowska,
Marcin Rosmus,
Jacek Kołodziej,
Andrzej Wiśniewski
Abstract:
Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cle…
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Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cleaving planes is different: P-terminated surface shows spoon and bow tie shaped fingerprints, whereas these shapes are not present in Nb-terminated surfaces. ARPES studies show that even 1 monolayer (ML) of Pb causes topological quantum Lifshitz transition (TQLT) in P- and Nb-terminated surfaces. Deposited Pb 5d electrons have wide extended atomic orbitals which leads to strong hybridization with Pb-terminated surface and a corresponding shift in the Fermi energy. Nb has less capability to perturb the system than Pb because Nb has weaker spin-orbit coupling than Pb. Nb-terminated surface subjected to surface decoration with approximately 1.3 ML of Nb shows no dramatic modification in the Fermi surface. In the case of Nb decorated P-terminated surface, deposition of approximately 1 ML modifies the electronic structure of NbP and it is on the verge of TQLT. Despite the strong spin-orbit and strong hybridization of the heavy elements on the surface, it is possible to observe the TQLT of the surface states thanks to the robustness of the bulk topology.
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Submitted 4 July, 2022; v1 submitted 12 February, 2022;
originally announced February 2022.
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Role of intercalated Cobalt in the electronic structure of Co$_{1/3}$NbS$_2$
Authors:
Petar Popčević,
Yuki Utsumi,
Izabela Biało,
Wojciech Tabis,
Mateusz A. Gala,
Marcin Rosmus,
Jacek J. Kolodziej,
Natalia Tomaszewska,
Mariusz Garb,
Helmuth Berger,
Ivo Batistić,
Neven Barišić,
László Forró,
Eduard Tutiš
Abstract:
Co$_{1/3}$NbS$_2$ is the magnetic intercalate of 2H-NbS$_2$ where electronic itinerant and magnetic properties strongly influence each other throughout the phase diagram. Here we report the first angle-resolved photoelectron spectroscopy (ARPES) study in Co$_{1/3}$NbS$_2$. The observed electronic structure seemingly resembles the one of the parent material 2H-NbS$_2$, with the shift in Fermi energ…
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Co$_{1/3}$NbS$_2$ is the magnetic intercalate of 2H-NbS$_2$ where electronic itinerant and magnetic properties strongly influence each other throughout the phase diagram. Here we report the first angle-resolved photoelectron spectroscopy (ARPES) study in Co$_{1/3}$NbS$_2$. The observed electronic structure seemingly resembles the one of the parent material 2H-NbS$_2$, with the shift in Fermi energy of 0.5 eV accounting for the charge transfer of approximately two electrons from each Co ion into the NbS$_2$ layers. However, we observe significant departures from the 2H-NbS$_2$ rigid band picture: Entirely unrelated to the 2H-NbS$_2$ electronic structure, a shallow electronic band is found crossing the Fermi level near the boundary of the first Brillouin zone of the superstructure imposed by the intercalation. The evolution of the experimental spectra upon varying the incident photon energy suggests the Co origin of this band. Second, the Nb bonding band, found deeply submerged below the Fermi level at the $Γ$ point, indicates the interlayer-hybridization being very much amplified by intercalation, with Co magnetic ions probably acting as covalent bridges between NbS$_2$ layers. The strong hybridization between conducting and magnetic degrees of freedom suggests dealing with strongly correlated electron system where the interlayer coupling plays an exquisite role.
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Submitted 8 April, 2022; v1 submitted 24 November, 2021;
originally announced November 2021.
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Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ Superlattices
Authors:
Joanna Sitnicka,
Kyungwha Park,
Paweł Skupiński,
Krzysztof Grasza,
Anna Reszka,
Kamil Sobczak,
Jolanta Borysiuk,
Zbigniew Adamus,
Mateusz Tokarczyk,
Andrei Avdonin,
Irina Fedorchenko,
Irina Abaloszewa,
Sylwia Turczyniak-Surdacka,
Natalia Olszowska,
Jacek Kolodziej,
Bogdan J. Kowalski,
Haiming Deng,
Marcin Konczykowski,
Lia Krusin-Elbaum,
Agnieszka Wolos
Abstract:
MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compos…
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MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compositional, and magnetic metrics of disorder in ferromagnetic MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ it is found that migration of Mn between MnBi$_{2}$T$e_{4}$ septuple layers (SLs) and otherwise non-magnetic Bi$_{2}$Te$_{3}$ quintuple layers (QLs) has systemic consequences - it induces ferromagnetic coupling of Mn-depleted SLs with Mn-doped QLs, seen in ferromagnetic resonance as an acoustic and optical resonance mode of the two coupled spin subsystems. Even for a large SL separation (n $\gtrsim$ 4 QLs) the structure cannot be considered as a stack of uncoupled two-dimensional layers. Angle-resolved photoemission spectroscopy and density functional theory studies show that Mn disorder within an SL causes delocalization of electron wavefunctions and a change of the surface bandstructure as compared to the ideal MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$. These findings highlight the critical importance of inter- and intra-SL disorder towards achieving new QAH platforms as well as exploring novel axion physics in intrinsic topological magnets.
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Submitted 9 September, 2021; v1 submitted 31 August, 2021;
originally announced September 2021.
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Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES
Authors:
A. S. Wadge,
G. Grabecki,
C. Autieri,
B. J. Kowalski,
P. Iwanowski,
G. Cuono,
M. F. Islam,
C. M. Canali,
K. Dybko,
A. Hruban,
A. Łusakowski,
T. Wojciechowski,
R. Diduszko,
A. Lynnyk,
N. Olszowska,
M. Rosmus,
J. Kołodziej,
A. Wiśniewski
Abstract:
We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$…
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We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-do** of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.
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Submitted 10 January, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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Conductance spectra of (Nb, Pb, In)/NbP -- superconductor/Weyl semimetal junctions
Authors:
G. Grabecki,
A. Dąbrowski,
P. Iwanowski,
A. Hruban,
B. J. Kowalski,
N. Olszowska,
J. Kołodziej,
M. Chojnacki,
K. Dybko,
A. Łusakowski,
T. Wojtowicz,
T. Wojciechowski,
R. Jakieła,
A. Wiśniewski
Abstract:
The possibility of inducing superconductivity in type-I Weyl semimetal through coupling its surface to a superconductor was investigated. A single crystal of NbP, grown by chemical vapor transport method, was carefully characterized by XRD, EDX, SEM, ARPES techniques and by electron transport measurements. The mobility spectrum of the carriers was determined. For the studies of interface transmiss…
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The possibility of inducing superconductivity in type-I Weyl semimetal through coupling its surface to a superconductor was investigated. A single crystal of NbP, grown by chemical vapor transport method, was carefully characterized by XRD, EDX, SEM, ARPES techniques and by electron transport measurements. The mobility spectrum of the carriers was determined. For the studies of interface transmission, the (001) surface of the crystal was covered by several hundred nm thick metallic layers of either Pb, or Nb, or In. DC current-voltage characteristics and AC differential conductance through the interfaces as a function of the DC bias were investigated. When the metals become superconducting, all three types of junctions show conductance increase, pointing out the Andreev reflection as a prevalent contribution to the subgap conductance. In the case of Pb-NbP and Nb-NbP junctions, the effect is satisfactorily described by modified Blonder-Tinkham-Klapwijk model. The absolute value of the conductance is much smaller than that for the bulk crystal, indicating that the transmission occurs through only a small part of the contact area. An opposite situation occurs in In-NbP junction, where the conductance at the peak reaches the bulk value indicating that almost whole contact area is transmitting and, additionally, a superconducting proximity phase is formed in the material. We interpret this as a result of indium diffusion into NbP, where the metal atoms penetrate the surface barrier and form very transparent superconductor-Weyl semimetal contact inside. However, further diffusion occurring already at room temperature leads to degradation of the effect, so it is observed only in the pristine structures. Despite of this, our observation directly demonstrates possibility of inducing superconductivity in a type-I Weyl semimetal.
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Submitted 20 January, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Effect of a skin-deep surface zone on formation of two-dimensional electron gas at a semiconductor surface
Authors:
Natalia Olszowska,
Jakub Lis,
Piotr Ciochon,
Lukasz Walczak,
Enrique G. Michel,
Jacek J. Kolodziej
Abstract:
Two dimensional electron gases (2DEGs) at surfaces and interfaces of semiconductors are described straightforwardly with a 1D self-consistent Poisson-Schrödinger scheme. However, their band energies have not been modeled correctly in this way. Using angle-resolved photoelectron spectroscopy we study the band structures of 2DEGs formed at sulfur-passivated surfaces of InAs(001) as a model system. E…
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Two dimensional electron gases (2DEGs) at surfaces and interfaces of semiconductors are described straightforwardly with a 1D self-consistent Poisson-Schrödinger scheme. However, their band energies have not been modeled correctly in this way. Using angle-resolved photoelectron spectroscopy we study the band structures of 2DEGs formed at sulfur-passivated surfaces of InAs(001) as a model system. Electronic properties of these surfaces are tuned by changing the S coverage, while kee** a high-quality interface, free of defects and with a constant do** density. In contrast to earlier studies we show that the Poisson-Schrödinger scheme predicts the 2DEG bands energies correctly but it is indispensable to take into account the existence of the physical surface. The surface substantially influences the band energies beyond simple electrostatics, by setting nontrivial boundary conditions for 2DEG wavefunctions.
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Submitted 2 June, 2016;
originally announced June 2016.