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Superionic surface Li-ion transport in carbonaceous materials
Authors:
Jianbin Zhou,
Shen Wang,
Chaoshan Wu,
Ji Qi,
Hongli Wan,
Shen Lai,
Shijie Feng,
Tsz Wai Ko,
Zhaohui Liang,
Ke Zhou,
Nimrod Harpak,
Nick Solan,
Mengchen Liu,
Zeyu Hui,
Paulina J. Ai,
Kent Griffith,
Chunsheng Wang,
Shyue ** Ong,
Yan Yao,
** Liu
Abstract:
Unlike Li-ion transport in the bulk of carbonaceous materials, little is known about Li-ion diffusion on their surface. In this study, we have discovered an ultra-fast Li-ion transport phenomenon on the surface of carbonaceous materials, particularly when they have limited Li insertion capacity along with a high surface area. This is exemplified by a carbon black, Ketjen Black (KB). An ionic condu…
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Unlike Li-ion transport in the bulk of carbonaceous materials, little is known about Li-ion diffusion on their surface. In this study, we have discovered an ultra-fast Li-ion transport phenomenon on the surface of carbonaceous materials, particularly when they have limited Li insertion capacity along with a high surface area. This is exemplified by a carbon black, Ketjen Black (KB). An ionic conductivity of 18.1 mS cm-1 at room temperature is observed, far exceeding most solid-state ion conductors. Theoretical calculations reveal a low diffusion barrier for the surface Li species. The species is also identified as Li*, which features a partial positive charge. As a result, lithiated KB functions effectively as an interlayer between Li and solid-state electrolytes (SSE) to mitigate dendrite growth and cell shorting. This function is found to be electrolyte agnostic, effective for both sulfide and halide SSEs. Further, lithiated KB can act as a high-performance mixed ion/electron conductor that is thermodynamically stable at potentials near Li metal. A graphite anode mixed with KB instead of a solid electrolyte demonstrates full utilization with a capacity retention of ~85% over 300 cycles. The discovery of this surface-mediated ultra-fast Li-ion transport mechanism provides new directions for the design of solid-state ion conductors and solid-state batteries.
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Submitted 27 May, 2024;
originally announced May 2024.
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Robust Training of Machine Learning Interatomic Potentials with Dimensionality Reduction and Stratified Sampling
Authors:
Ji Qi,
Tsz Wai Ko,
Brandon C. Wood,
Tuan Anh Pham,
Shyue ** Ong
Abstract:
Machine learning interatomic potentials (MLIPs) enable the accurate simulation of materials at larger sizes and time scales, and play increasingly important roles in the computational understanding and design of materials. However, MLIPs are only as accurate and robust as the data they are trained on. In this work, we present DImensionality-Reduced Encoded Clusters with sTratified (DIRECT) samplin…
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Machine learning interatomic potentials (MLIPs) enable the accurate simulation of materials at larger sizes and time scales, and play increasingly important roles in the computational understanding and design of materials. However, MLIPs are only as accurate and robust as the data they are trained on. In this work, we present DImensionality-Reduced Encoded Clusters with sTratified (DIRECT) sampling as an approach to select a robust training set of structures from a large and complex configuration space. By applying DIRECT sampling on the Materials Project relaxation trajectories dataset with over one million structures and 89 elements, we develop an improved materials 3-body graph network (M3GNet) universal potential that extrapolate more reliably to unseen structures. We further show that molecular dynamics (MD) simulations with universal potentials such as M3GNet can be used in place of expensive \textit{ab initio} MD to rapidly create a large configuration space for target materials systems. Combined with DIRECT sampling, we develop a highly reliable moment tensor potential for Ti-H system without the need for iterative optimization. This work paves the way towards robust high throughput development of MLIPs across any compositional complexity.
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Submitted 24 July, 2023;
originally announced July 2023.
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Atomic scale imaging of sign-changing order parameter in superconducting FeSe with Tunneling Andreev Reflection
Authors:
Wonhee Ko,
Sang Yong Song,
Jiaqiang Yan,
Jose L. Lado,
Petro Maksymovych
Abstract:
The pairing symmetry of the superconducting order parameter in iron-based superconductors has been a subject of debate, with various models proposing s-wave, d-wave, and mixed combinations as possible candidates. Here we probe the pairing symmetry of FeSe utilizing the new methodology of Tunneling Andreev Reflection (TAR). TAR directly exploits the transparency-dependence of tunneling current to d…
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The pairing symmetry of the superconducting order parameter in iron-based superconductors has been a subject of debate, with various models proposing s-wave, d-wave, and mixed combinations as possible candidates. Here we probe the pairing symmetry of FeSe utilizing the new methodology of Tunneling Andreev Reflection (TAR). TAR directly exploits the transparency-dependence of tunneling current to disentangle contributions of single-particle current and Andreev reflection. These measurements provided new direct evidence in favor of the sign-changing nature of the superconducting order in FeSe, in a distinctly complementary approach to nanoscale imaging of quasiparticle interference. Crucially TAR can also probe higher-order contributions to Andreev reflection. Quantitative comparison of the experimental signatures of higher-order Andreev reflections with those in concomitant tight-binding simulations revealed new evidence in support of the nodal gap structure of superconductivity in FeSe. Finally, the effect of structural topological defects can be directly probed with TAR owing to its atomic spatial resolution. In particular, we find that superconductivity is completely suppressed along the twin boundary while its electronic structure is characterized by a V-shaped signature of a pseudogap state. Our findings provide new insight into the pairing symmetry of an unconventional superconductor, demonstrating the potential of differential tunneling Andreev reflection to reveal microscopic properties of emerging quantum materials.
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Submitted 9 March, 2023;
originally announced March 2023.
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Interplay between Topological States and Rashba States as Manifested on Surface Steps at Room Temperature
Authors:
Wonhee Ko,
Seoung-Hun Kang,
Jason Lapano,
Hao Chang,
Jacob Teeter,
Hoyeon Jeon,
Matthew Brahlek,
Mina Yoon,
Robert G. Moore,
An-** Li
Abstract:
The unique spin texture of quantum states in topological materials underpins many proposed spintronic applications. However, realizations of such great potential are stymied by perturbations, such as temperature and local fields imposed by impurities and defects, that can render a promising quantum state uncontrollable. Here, we report room-temperature observation of interaction between Rashba sta…
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The unique spin texture of quantum states in topological materials underpins many proposed spintronic applications. However, realizations of such great potential are stymied by perturbations, such as temperature and local fields imposed by impurities and defects, that can render a promising quantum state uncontrollable. Here, we report room-temperature observation of interaction between Rashba states and topological surface states, which manifests unique spin textures controllable by layer thickness of thin films. Specifically, we combine scanning tunneling microscopy/spectroscopy with the first-principles theoretical calculation to find the robust Rashba states coexisting with topological surface states along the surface steps with characteristic spin textures in momentum space. The Rashba edge states can be switched off by reducing the thickness of a topological insulator Bi2Se3 to bolster their interaction with the hybridized topological surface states. The study unveils a manipulating mechanism of the spin textures at room temperature, reinforcing the necessity of thin film technology in controlling quantum states.
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Submitted 30 October, 2023; v1 submitted 16 January, 2023;
originally announced January 2023.
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Anti-site defect-induced disorder in compensated topological magnet MnBi$_{2-x}$Sb$_x$Te$_4$
Authors:
Felix Lüpke,
Marek Kolmer,
Jiaqiang Yan,
Hao Chang,
Paolo Vilmercati,
Hanno H. Weitering,
Wonhee Ko,
An-** Li
Abstract:
The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi$_{2-x}$Sb$_x$Te$_4$ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating states. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and…
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The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi$_{2-x}$Sb$_x$Te$_4$ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating states. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and do** levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with $x=0.64$, by scanning tunneling microscopy/spectroscopy (STM/S). We identify (Bi,Sb)$_{\rm Mn}$ anti-site defects to be the main source of the observed do** fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties.
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Submitted 6 October, 2023; v1 submitted 29 August, 2022;
originally announced August 2022.
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Atomistic simulations of the deformation behavior of an Nb nanowire embedded in a NiTi shape memory alloy
Authors:
Jung Soo Lee,
Won-Seok Ko,
Blazej Grabowski
Abstract:
The influence of pre-strain and temperature on the superior properties exhibited by an Nb nanowire embedded in a NiTi shape memory alloy (SMA) are investigated via molecular dynamics simulations. To this end, a new Nb-Ni-Ti ternary interatomic potential based on the second nearest-neighbor modified embedded-atom method (2NN MEAM) is developed and employed. The origin of the unique phenomena of qua…
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The influence of pre-strain and temperature on the superior properties exhibited by an Nb nanowire embedded in a NiTi shape memory alloy (SMA) are investigated via molecular dynamics simulations. To this end, a new Nb-Ni-Ti ternary interatomic potential based on the second nearest-neighbor modified embedded-atom method (2NN MEAM) is developed and employed. The origin of the unique phenomena of quasi-linear elasticity, slim hysteresis, and reduction in Young's modulus observed for pre-strained nanowire-SMA composites is uncovered. The results demonstrate the importance of plastic deformation in the embedded Nb nanowires and reveal how the deformation facilitates the just-mentioned, unprecedented phenomena. A simple and straightforwardly obtainable descriptor to correlate and monitor Young's modulus evolution during pre-straining is proposed. Furthermore, our simulations suggest that the desired Young's modulus can be obtained for a wide range of application temperatures through appropriate pre-straining.
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Submitted 19 February, 2022;
originally announced February 2022.
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Non-contact Andreev reflection as a direct probe of superconductivity on the atomic scale
Authors:
Wonhee Ko,
Jose L. Lado,
Petro Maksymovych
Abstract:
Direct detection of superconductivity has long been a key strength of point-contact Andreev reflection. However, its applicability to atomic-scale imaging is limited by the mechanical contact of the Andreev probe. To this end, we present a new method to probe Andreev reflection in a tunnel junction, leveraging tunneling spectroscopy and junction tunability to achieve quantitative detection of Andr…
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Direct detection of superconductivity has long been a key strength of point-contact Andreev reflection. However, its applicability to atomic-scale imaging is limited by the mechanical contact of the Andreev probe. To this end, we present a new method to probe Andreev reflection in a tunnel junction, leveraging tunneling spectroscopy and junction tunability to achieve quantitative detection of Andreev scattering. This method enables unambiguous assignment of superconducting origins of current-carrying excitations as well as detection of higher order Andreev processes in atomic-scale junctions. We furthermore revealed distinct sensitivity of Andreev reflection to natural defects, such as step edges, even in classical superconductors. The methodology opens a new path to nanoand atomic-scale imaging of superconducting properties, including disordered superconductors and proximity to phase transitions.
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Submitted 4 February, 2022;
originally announced February 2022.
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Reshaped Weyl fermionic dispersions driven by Coulomb interactions in MoTe2
Authors:
Seoung-Hun Kang,
Sangjun Jeon,
Hyun-Jung Kim,
Wonhee Ko,
Suyeon Cho,
Se Hwang Kang,
Sung Wng Kim,
Heejun Yang,
Hyo Won Kim,
Young-Woo Son
Abstract:
We report the direct evidence of impacts of the Coulomb interaction in a prototypical Weyl semimetal, MoTe2, that alter its bare bands in a wide range of energy and momentum. Our quasiparticle interference patterns measured using scanning tunneling microscopy are shown to match the joint density of states of quasiparticle energy bands including momentum-dependent self-energy corrections, while ele…
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We report the direct evidence of impacts of the Coulomb interaction in a prototypical Weyl semimetal, MoTe2, that alter its bare bands in a wide range of energy and momentum. Our quasiparticle interference patterns measured using scanning tunneling microscopy are shown to match the joint density of states of quasiparticle energy bands including momentum-dependent self-energy corrections, while electronic energy bands based on the other simpler local approximations of the Coulomb interaction fail to explain neither the correct number of quasiparticle pockets nor shape of their dispersions observed in our spectrum. With this, we predict a transition between type-I and type-II Weyl fermions with do** and resolve its disparate quantum oscillation experiments, thus highlighting the critical roles of Coulomb interactions in layered Weyl semimetals.
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Submitted 13 October, 2021; v1 submitted 10 October, 2021;
originally announced October 2021.
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Atomistic deformation behavior of single and twin crystalline Cu nanopillars with preexisting dislocations
Authors:
Won-Seok Ko,
Alexander Stukowski,
Raheleh Hadian,
Ali Nematollahi,
Jong Bae Jeon,
Won Seok Choi,
Gerhard Dehm,
Jörg Neugebauer,
Christoph Kirchlechner,
Blazej Grabowski
Abstract:
Molecular dynamics simulations are performed to investigate the role of a coherent Σ3 (111) twin boundary on the plastic deformation behavior of Cu nanopillars. Our work reveals that the mechanical response of pillars with and without the twin boundary is decisively driven by the characteristics of initial dislocation sources. In the condition of comparably large pillar size and abundant initial m…
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Molecular dynamics simulations are performed to investigate the role of a coherent Σ3 (111) twin boundary on the plastic deformation behavior of Cu nanopillars. Our work reveals that the mechanical response of pillars with and without the twin boundary is decisively driven by the characteristics of initial dislocation sources. In the condition of comparably large pillar size and abundant initial mobile dislocations, overall yield and flow stresses are controlled by the longest, available mobile dislocation. An inverse correlation of the yield and flow stresses with the length of the longest dislocation is established, and its extrapolation agrees well with experimental yield stress data. The experimentally reported subtle differences in yield and flow stresses between pillars with and without the twin boundary are thus likely related to the maximum lengths of the mobile dislocations. In the condition of comparably small pillar size, for which a reduction of mobile dislocations during heat treatment and mechanical loading occurs, the mechanical response of pillars with and without the twin boundary can be clearly distinguished. Dislocation starvation during deformation is more clearly present in pillars without the twin boundary than in pillars with the twin boundary because the twin boundary acts as a pinning surface for the dislocation network.
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Submitted 8 April, 2021; v1 submitted 8 April, 2021;
originally announced April 2021.
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Van der Waals Epitaxy on Freestanding Monolayer Graphene Membrane by MBE
Authors:
Jason Lapano,
Ondrej Dyck,
Andrew Lupini,
Wonhee Ko,
Haoxiang Li,
Hu Miao,
Ho Nyung Lee,
An-** Li,
Matthew Brahlek,
Stephen Jesse,
Robert G. Moore
Abstract:
Research on two-dimensional materials has expanded over the past two decades to become a central theme in condensed matter research today. Significant advances have been made in the synthesis and subsequent reassembly of these materials using mechanical methods into a vast array of hybrid structures with novel properties and ever-increasing potential applications. The key hurdles in realizing this…
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Research on two-dimensional materials has expanded over the past two decades to become a central theme in condensed matter research today. Significant advances have been made in the synthesis and subsequent reassembly of these materials using mechanical methods into a vast array of hybrid structures with novel properties and ever-increasing potential applications. The key hurdles in realizing this potential are the challenges in controlling the atomic structure of these layered hybrid materials and the difficulties in harnessing their unique functionality with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This templated synthesis approach enables direct interrogation of interfacial atomic structure of these as-grown hybrid structures and opens a route towards creating device structures with more traditional semiconductor nanofabrication techniques.
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Submitted 29 March, 2021;
originally announced March 2021.
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Dissecting functional degradation in NiTi shape-memory-alloys containing amorphous regions via atomistic simulations
Authors:
Won-Seok Ko,
Won Seok Choi,
Guanglong Xu,
Pyuck-Pa Cho,
Yuji Ikeda,
Blazej Grabowski
Abstract:
Molecular dynamics simulations are performed to provide a detailed understanding of the functional degradation of shape memory alloys at small scale. The origin of the experimentally reported accumulation of plastic deformation and the anomalous sudden increase of the residual strain under cyclic mechanical loading are explained by detailed insights into the relevant atomic scale processes. Our wo…
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Molecular dynamics simulations are performed to provide a detailed understanding of the functional degradation of shape memory alloys at small scale. The origin of the experimentally reported accumulation of plastic deformation and the anomalous sudden increase of the residual strain under cyclic mechanical loading are explained by detailed insights into the relevant atomic scale processes. Our work reveals that the mechanical response of shape-memory-alloy pillars under cyclic compression is significantly influenced by the presence of an amorphous-like surface region as experimentally induced by focused ion beam milling. The main factor responsible for the observed degradation of superelasticity under cyclic loading is the accumulated plastic deformation and the resultant retained martensite originating from a synergetic contribution of the amorphous and crystalline shape-memory-alloy regions. We show that the reported sudden diminishment of the stress plateaus and hysteresis under cyclic loading is caused by the increased stability of the martensite phase due to the presence of the amorphous phase. Based on the identified mechanism responsible for the degradation, we validate reported methods of recovering the superelasticity and propose a new method to prohibit the synergetic contribution of the amorphous and crystalline regions, such as to achieve a sustainable operation of shape memory alloys at small scale.
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Submitted 31 March, 2021; v1 submitted 26 March, 2021;
originally announced March 2021.
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Local manifestations of thickness dependent topology and axion edge state in topological magnet MnBi$_2$Te$_4$
Authors:
Felix Lüpke,
Anh D. Pham,
Yi-Fan Zhao,
Ling-Jie Zhou,
Wenchang Lu,
Emil Briggs,
Jerzy Bernholc,
Marek Kolmer,
Wonhee Ko,
Cui-Zu Chang,
Panchapakesan Ganesh,
An-** Li
Abstract:
The interplay of non-trivial band topology and magnetism gives rise to a series of exotic quantum phenomena, such as the emergent quantum anomalous Hall (QAH) effect and topological magnetoelectric effect. Many of these quantum phenomena have local manifestations when the global symmetry is broken. Here, we report local signatures of the thickness dependent topology in intrinsic magnetic topologic…
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The interplay of non-trivial band topology and magnetism gives rise to a series of exotic quantum phenomena, such as the emergent quantum anomalous Hall (QAH) effect and topological magnetoelectric effect. Many of these quantum phenomena have local manifestations when the global symmetry is broken. Here, we report local signatures of the thickness dependent topology in intrinsic magnetic topological insulator MnBi$_2$Te$_4$(MBT), using scanning tunneling microscopy and spectroscopy on molecular beam epitaxy grown MBT thin films. A thickness-dependent band gap with an oscillatory feature is revealed, which we reproduce with theoretical calculations. Our theoretical results indicate a topological quantum phase transition beyond a film thickness of one monolayer, with alternating QAH and axion insulating states for even and odd layers, respectively. At an even-odd layer step, a localized gapped electronic state is observed, in agreement with an axion insulator edge state that results from a phase transition across the step. The demonstration of thickness-dependent topological properties highlights the role of nanoscale control over novel quantum states, reinforcing the necessity of thin film technology in quantum information science applications.
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Submitted 20 January, 2021;
originally announced January 2021.
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Statistical detection of Josephson, Andreev, and single quasiparticle currents in scanning tunneling microscopy
Authors:
Wonhee Ko,
Eugene F. Dumitrescu,
Petro Maksymovych
Abstract:
We present a method to identify distinct tunneling modes in tunable superconducting tunnel junction composed of superconducting tip and sample in scanning tunneling microscope. Combining the measurement of the relative decay constant of tunneling current extracted from I-V-z spectroscopy with its statistical analysis over the atomic disorders in the sample surface, we identified the crossover of t…
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We present a method to identify distinct tunneling modes in tunable superconducting tunnel junction composed of superconducting tip and sample in scanning tunneling microscope. Combining the measurement of the relative decay constant of tunneling current extracted from I-V-z spectroscopy with its statistical analysis over the atomic disorders in the sample surface, we identified the crossover of tunneling modes between single quasiparticle tunneling, multiple Andreev reflection, and Josephson tunneling with respect to the bias voltage. The method enables one to determine the particular tunneling regime independently of the spectral shapes, and to reveal the intrinsic modulation of Andreev reflection and Josephson current that would be crucial for quantum device application of superconductors.
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Submitted 4 December, 2020;
originally announced December 2020.
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A Fourth-Generation High-Dimensional Neural Network Potential with Accurate Electrostatics Including Non-local Charge Transfer
Authors:
Tsz Wai Ko,
Jonas A. Finkler,
Stefan Goedecker,
Jörg Behler
Abstract:
Machine learning potentials have become an important tool for atomistic simulations in many fields, from chemistry via molecular biology to materials science. Most of the established methods, however, rely on local properties and are thus unable to take global changes in the electronic structure into account, which result from long-range charge transfer or different charge states. In this work we…
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Machine learning potentials have become an important tool for atomistic simulations in many fields, from chemistry via molecular biology to materials science. Most of the established methods, however, rely on local properties and are thus unable to take global changes in the electronic structure into account, which result from long-range charge transfer or different charge states. In this work we overcome this limitation by introducing a fourth-generation high-dimensional neural network potential that combines a charge equilibration scheme employing environment-dependent atomic electronegativities with accurate atomic energies. The method, which is able to correctly describe global charge distributions in arbitrary systems, yields much improved energies and substantially extends the applicability of modern machine learning potentials. This is demonstrated for a series of systems representing typical scenarios in chemistry and materials science that are incorrectly described by current methods, while the fourth-generation neural network potential is in excellent agreement with electronic structure calculations.
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Submitted 14 September, 2020;
originally announced September 2020.
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Realizing gapped surface states in magnetic topological insulator MnBi$_{2-x}$Sb$_{x}$Te$_{4}$
Authors:
Wonhee Ko,
Marek Kolmer,
Jiaqiang Yan,
Anh D. Pham,
Mingming Fu,
Felix Lüpke,
Satoshi Okamoto,
Zheng Gai,
Panchapakesan Ganesh,
An-** Li
Abstract:
The interplay between magnetism and non-trivial topology in magnetic topological insulators (MTI) is expected to give rise to a variety of exotic topological quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the topological axion states. A key to assessing these novel properties is to tune the Fermi level in the exchange gap of the Dirac surface band. MnBi$_2$Te$_4$ possesses…
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The interplay between magnetism and non-trivial topology in magnetic topological insulators (MTI) is expected to give rise to a variety of exotic topological quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the topological axion states. A key to assessing these novel properties is to tune the Fermi level in the exchange gap of the Dirac surface band. MnBi$_2$Te$_4$ possesses non-trivial band topology with intrinsic antiferromagnetic (AFM) state that can enable all of these quantum states, however, highly electron-doped nature of the MnBi$_2$Te$_4$ crystals obstructs the exhibition of the gapped topological surface states. Here, we tailor the material through Sb-substitution to reveal the gapped surface states in MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ (MBST). By shifting the Fermi level into the bulk band gap of MBST, we access the surface states and show a band gap of 50 meV at the Dirac point from quasi-particle interference (QPI) measured by scanning tunneling microscopy/spectroscopy (STM/STS). Surface-dominant conduction is confirmed below the Néel temperature through transport spectroscopy measured by multiprobe STM. The surface band gap is robust against out-of-plane magnetic field despite the promotion of field-induced ferromagnetism. The realization of bulk-insulating MTI with the large exchange gap offers a promising platform for exploring emergent topological phenomena.
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Submitted 28 February, 2020;
originally announced March 2020.
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Single-defect Memristor in MoS$_2$ Atomic-layer
Authors:
Saban M. Hus,
Rui**g Ge,
Po-An Chen,
Meng-Hsueh Chiang,
Gavin E. Donnelly,
Wonhee Ko,
Fumin Huang,
Liangbo Liang,
An-** Li,
Deji Akinwande
Abstract:
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has add…
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Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has added a new dimension of interest owing to the prospects of size scaling and the associated benefits. However, the origin of the switching mechanism in atomic sheets remains uncertain. Here, using monolayer MoS$_2$ as a model system, atomistic imaging and spectroscopy reveal that metal substitution into sulfur vacancy results in a non-volatile change in resistance. The experimental observations are corroborated by computational studies of defect structures and electronic states. These remarkable findings provide an atomistic understanding on the non-volatile switching mechanism and open a new direction in precision defect engineering, down to a single defect, for achieving optimum performance metrics including memory density, switching energy, speed, and reliability using atomic nanomaterials.
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Submitted 4 February, 2020;
originally announced February 2020.
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Symmetry dictated grain boundary state in a two-dimensional topological insulator
Authors:
Hyo Won Kim,
Seoung-Hun Kang,
Hyun-Jung Kim,
Kisung Chae,
Suyeon Cho,
Wonhee Ko,
Se Hwang Kang,
Heejun Yang,
Sung Wng Kim,
Seongjun Park,
Sung Woo Hwang,
Young-Kyun Kwon,
Young-Woo Son
Abstract:
Structural imperfections such as grain boundaries (GBs) and dislocations are ubiquitous in solids and have been of central importance in understanding nature of polycrystals. In addition to their classical roles, advent of topological insulators (TIs) offers a chance to realize distinct topological states bound to them. Although dislocation inside three-dimensional TIs is one of the prime candidat…
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Structural imperfections such as grain boundaries (GBs) and dislocations are ubiquitous in solids and have been of central importance in understanding nature of polycrystals. In addition to their classical roles, advent of topological insulators (TIs) offers a chance to realize distinct topological states bound to them. Although dislocation inside three-dimensional TIs is one of the prime candidates to look for, its direct detection and characterization are challenging. Instead, in two-dimensional (2D) TIs, their creations and measurements are easier and, moreover, topological states at the GBs or dislocations intimately connect to their lattice symmetry. However, such roles of crystalline symmetries of GBs in 2D TIs have not been clearly measured yet. Here, we present the first direct evidence of a symmetry enforced Dirac type metallic state along a GB in 1T'-MoTe$_2$, a prototypical 2D TI. Using scanning tunneling microscope, we show a metallic state along a grain boundary with non-symmorphic lattice symmetry and its absence along the other boundary with symmorphic one. Our large scale atomistic simulations demonstrate hourglass like nodal-line semimetallic in-gap states for the former while the gap-opening for the latter, explaining our observation very well. The protected metallic state tightly linked to its crystal symmetry demonstrated here can be used to create stable metallic nanowire inside an insulator.
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Submitted 5 July, 2019; v1 submitted 4 July, 2019;
originally announced July 2019.
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Confinement Heteroepitaxy: Realizing Atomically Thin, Half-van der Waals Materials
Authors:
Natalie Briggs,
Brian Bersch,
Yuanxi Wang,
Nadire Nayir,
Roland J. Koch,
Ke Wang,
Marek Kolmer,
Wonhee Ko,
Ana De La Fuente Duran,
Shruti Subramanian,
Chengye Dong,
Jeffrey Shallenberger,
Aaron Bostwick,
Chris Jozwiak,
Eli Rotenberg,
An-** Li,
Adri C. T. van Duin,
Vincent Crespi,
Joshua Robinson
Abstract:
Three-dimensional epitaxial heterostructures are based on covalently-bonded interfaces, whereas those from 2-dimensional (2D) materials exhibit van der Waals interactions. Under the right conditions, however, material structures with mixed interfacial van der Waals and covalent bonding may be realized. Atomically thin layers formed at the epitaxial graphene (EG)/silicon carbide (SiC) interface ind…
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Three-dimensional epitaxial heterostructures are based on covalently-bonded interfaces, whereas those from 2-dimensional (2D) materials exhibit van der Waals interactions. Under the right conditions, however, material structures with mixed interfacial van der Waals and covalent bonding may be realized. Atomically thin layers formed at the epitaxial graphene (EG)/silicon carbide (SiC) interface indicate that EG/SiC interfaces provide this unique environment and enable synthesis of a rich palette of 2D materials not accessible with traditional techniques. Here, we demonstrate a method termed confinement heteroepitaxy (CHet), to realize air-stable, structurally unique, crystalline 2D-Ga, In, and Sn at the EG/SiC interface. The first intercalant layer is covalently-bonded to the SiC, and is accompanied by a vertical bonding gradient that ends with van der Waals interactions. Such structures break out of plane centrosymmetry, thereby introducing atomically thin, non-centrosymmetric 2D allotropes of 3D materials as a foundation for tunable superconductivity, topological states, and plasmonic properties.
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Submitted 30 May, 2019; v1 submitted 23 May, 2019;
originally announced May 2019.
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Atomic-scale manipulation and in situ characterization with scanning tunneling microscopy
Authors:
Wonhee Ko,
Chuanxu Ma,
Giang D. Nguyen,
Marek Kolmer,
An-** Li
Abstract:
Scanning tunneling microscope (STM) has presented a revolutionary methodology to the nanoscience and nanotechnology. It enables imaging the topography of surfaces, map** the distribution of electronic density of states, and manipulating individual atoms and molecules, all at the atomic resolution. In particular, the atom manipulation capability has evolved from fabricating individual nanostructu…
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Scanning tunneling microscope (STM) has presented a revolutionary methodology to the nanoscience and nanotechnology. It enables imaging the topography of surfaces, map** the distribution of electronic density of states, and manipulating individual atoms and molecules, all at the atomic resolution. In particular, the atom manipulation capability has evolved from fabricating individual nanostructures towards the scalable production of the atomic-sized devices bottom-up. The combination of precision synthesis and in situ characterization of the atomically precise structures has enabled direct visualization of many quantum phenomena and fast proof-of-principle testing of quantum device functions with real-time feedback to guide the improved synthesis. In this article, several representative examples are reviewed to demonstrate the recent development of atomic scale manipulation. Especially, the review focuses on the progress that address the quantum properties by design through the precise control of the atomic structures in several technologically relevant materials systems. Besides conventional STM manipulations and electronic structure characterization with single-probe STM, integration of multiple atomically precisely controlled probes in a multiprobe STM system vastly extends the capability of in situ characterization to a new dimension where the charge and spin transport behaviors can be examined from mesoscopic to atomic length scale. The automation of the atomic scale manipulation and the integration with the well-established lithographic processes would further push this bottom-up approach to a new level that combines reproducible fabrication, extraordinary programmability, and the ability to produce large-scale arrays of quantum structures.
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Submitted 23 May, 2019;
originally announced May 2019.
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Edge states and ballistic transport in zig-zag graphene ribbons: the role of SiC polytypes
Authors:
A. L. Miettinen,
M. S. Nevius,
W. Ko,
M. Kolmer,
A. -P Li,
M. N. Nair,
A. Taleb-Ibrahimi,
B. Kierren,
L. Moreau,
E. H. Conrad,
A. Tejeda
Abstract:
Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribbons are diffusive conductors. Detailed photoemmision and microscopy studies show that 6H-SiC sidewal…
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Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribbons are diffusive conductors. Detailed photoemmision and microscopy studies show that 6H-SiC sidewalls zig-zag ribbons are metallic with a pair of n-doped edge states associated with asymmetric edge terminations, In contrast, 4H-SiC zig-zag ribbons are strongly bonded to the SiC; severely distorting the ribbon's $π$-bands. $\text{H}_2$-passivation of the 4H ribbons returns them to a metallic state but show no evidence of edge states.
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Submitted 12 March, 2019;
originally announced March 2019.
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Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond Substrate Grain Size Limit
Authors:
Kar Wei Ng,
Thai-Truong D. Tran,
Wai Son Ko,
Roger Chen,
Fanglu Lu,
Connie J. Chang-Hasnain
Abstract:
Monolithic integration of III-V optoelectronic devices with materials for various functionalities inexpensively is always desirable. Polysilicon (poly-Si) is an ideal platform because it is dopable and semi-conducting and can be deposited and patterned easily on a wide range of low cost substrates. However, the lack of crystalline coherency in poly-Si poses an immense challenge for high-quality ep…
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Monolithic integration of III-V optoelectronic devices with materials for various functionalities inexpensively is always desirable. Polysilicon (poly-Si) is an ideal platform because it is dopable and semi-conducting and can be deposited and patterned easily on a wide range of low cost substrates. However, the lack of crystalline coherency in poly-Si poses an immense challenge for high-quality epitaxial growth. In this work, we demonstrate, for the first time, direct growth of micron-sized InGaAs/GaAs nanopillars on polysilicon. Transmission electron microscopy shows that the micron-sized pillars are single-crystalline and single Wurzite-phase, far exceeding the substrate crystal grain size ~100nm. The high quality growth is enabled by the unique tapering geometry at the base of the nanostructure, which reduces the effective InGaAs/Si contact area to < 40 nm in diameter. The small footprint not only reduces stress due to lattice mismatch but also prevents the nanopillar from nucleating on multiple Si crystal grains. This relaxes the grain size requirement for poly-Si, potentially reducing the cost for poly-Si deposition. Lasing is achieved in the as-grown pillars under optical pum**, attesting their excellent crystalline and optical quality. These promising results open up a pathway for low-cost synergy of optoelectronics with other technologies such as CMOS integrated circuits, sensing, nanofluidics, thin film transistor display, photovoltaics, etc.
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Submitted 28 October, 2013;
originally announced October 2013.
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Ordering and criticality in an underscreened Kondo chain
Authors:
Wing-Ho Ko,
Hong-Chen Jiang,
Jeffrey G. Rau,
Leon Balents
Abstract:
Motivated by the nickel valence controversy in the perovskite nickelate RNiO_3, we consider a one-dimensional underscreened Kondo chain consisting of alternating spin-1 ("nickel") and electron ("oxygen") sites, which in addition to the usual electron hop** and spin-spin interaction between the S=1 spin and the electron also contains a spin mediated electron hop** term. Using the density-matrix…
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Motivated by the nickel valence controversy in the perovskite nickelate RNiO_3, we consider a one-dimensional underscreened Kondo chain consisting of alternating spin-1 ("nickel") and electron ("oxygen") sites, which in addition to the usual electron hop** and spin-spin interaction between the S=1 spin and the electron also contains a spin mediated electron hop** term. Using the density-matrix renormalization group (DMRG), we obtained the zero temperature phase diagram of the model, as well as various correlation functions in each phase. Importantly, for a certain range of parameters the model exhibits a quasi-long-range spiral (QS) order. To understand the DMRG results, we construct a mean-field theory based on a Schwinger fermion decomposition of the S=1 spins, from which we argue that the QS phase corresponds to a phase in proximity to the spin Bose metal state proposed by D. N. Sheng, O. I. Motrunich, and M. P. A. Fisher [Phys. Rev. B 79, 205112 (2009)]. Notably, we find no evidence for a phase with the symmetry of "nickel"-centered charge order, which has been argued to arise due to site-selective Kondo screening of half the S=1 spins, and suggest that order of this type occurs only due to an additional energy gain from spontaneous lattice distortions, not present in this model.
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Submitted 28 May, 2013; v1 submitted 15 January, 2013;
originally announced January 2013.
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Proposal for detecting spin-chirality terms in Mott insulators via resonant inelastic x-ray scattering
Authors:
Wing-Ho Ko,
Patrick A. Lee
Abstract:
We consider the question of whether resonant inelastic x-ray scattering (RIXS) can be used to detect many-body excitations that are coupled to the spin-chirality terms S_i . (S_j x S_k) in a Mott insulator. We find that while the spin-chirality terms are in general absent in the usual experimental setups of RIXS, there are prospects of realizing such terms if one considers instead the scattering n…
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We consider the question of whether resonant inelastic x-ray scattering (RIXS) can be used to detect many-body excitations that are coupled to the spin-chirality terms S_i . (S_j x S_k) in a Mott insulator. We find that while the spin-chirality terms are in general absent in the usual experimental setups of RIXS, there are prospects of realizing such terms if one considers instead the scattering near a pre-edge. We then perform detailed analyses for the square and the kagome lattices, and brief analyses for the triangular and the honeycomb lattices, in which we show that the spin-chirality terms are indeed present in all the above lattices, but that they occur at a higher order in our expansion for the kagome and the honeycomb lattices. The merit of using RIXS in addition to Raman spectroscopy to detect excitations that are coupled to the spin-chirality terms is also briefly discussed in the context of the emergent gauge boson in the U(1) Dirac spin liquid.
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Submitted 12 September, 2011; v1 submitted 15 June, 2011;
originally announced June 2011.
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Magnetism and Mott Transition: A Slave-rotor Study
Authors:
Wing-Ho Ko,
Patrick A. Lee
Abstract:
Motivated by the debate of spin-density-wave (SDW) versus local-moment (LM) picture in the iron-based superconducting (FeSC) materials, we consider a two-band orbital-symmetric Hubbard model in which there is robust Fermi surface nesting at $(π,0)$. We obtain the phase diagram of such system by a mean-field slave-rotor approach, in which the Fermi surface nesting and the SDW order are explicitly t…
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Motivated by the debate of spin-density-wave (SDW) versus local-moment (LM) picture in the iron-based superconducting (FeSC) materials, we consider a two-band orbital-symmetric Hubbard model in which there is robust Fermi surface nesting at $(π,0)$. We obtain the phase diagram of such system by a mean-field slave-rotor approach, in which the Fermi surface nesting and the SDW order are explicitly taken into account via a natural separation of scale between the Hund's coupling and the Coulomb interaction. We find that for a sizable range of Hund's coupling the Mott transition acquires a strong first-order character, but there also exists a small range of stronger Hund's coupling in which an enhancement of magnetization can be observed on the SDW side. We interpret the former scenario as one in which a sharp distinction can be drawn between LM and the SDW picture, and the latter scenario as one in which signs of LM physics begin to develop in the metallic phase. It is tempting to suggest that some FeSC materials are in the vicinity of the latter scenario.
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Submitted 4 April, 2011; v1 submitted 26 January, 2011;
originally announced January 2011.
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Raman signature of the U(1) Dirac spin-liquid state in spin-1/2 kagome system
Authors:
Wing-Ho Ko,
Zheng-Xin Liu,
Tai-Kai Ng,
Patrick A. Lee
Abstract:
We followed the Shastry--Shraiman formulation of Raman scattering in Hubbard systems and considered the Raman intensity profile in the spin-1/2 "perfect" kagome lattice herbertsmithite ZnCu_3(OH)_6Cl_2, assuming the ground state is well-described by the U(1) Dirac spin-liquid state. In the derivation of the Raman T-matrix, we found that the spin chirality term appears in the A_{2g} channel in th…
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We followed the Shastry--Shraiman formulation of Raman scattering in Hubbard systems and considered the Raman intensity profile in the spin-1/2 "perfect" kagome lattice herbertsmithite ZnCu_3(OH)_6Cl_2, assuming the ground state is well-described by the U(1) Dirac spin-liquid state. In the derivation of the Raman T-matrix, we found that the spin chirality term appears in the A_{2g} channel in the kagome lattice at the t^4/(ω_i-U)^3 order, but (contrary to the claims by Shastry and Shraiman) vanishes in the square lattice to that order. In the ensuing calculations on the spin-1/2 kagome lattice, we found that the Raman intensity profile in the E_g channel is invariant under an arbitrary rotation in the kagome plane, and that in all (A_{1g}, E_g, and A_{2g}) symmetry channels the Raman intensity profile contains broad continua that display power-law behaviors at low energy, with exponent approximately equal to 1 in the A_{2g} channel and exponent approximately equal to 3 in the E_g and the A_{1g} channels. For the A_{2g} channel, the Raman profile also contains a characteristic 1/ωsingularity, which arose in our model from an excitation of the emergent U(1) gauge field.
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Submitted 1 February, 2010; v1 submitted 28 October, 2009;
originally announced October 2009.
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Quantum Imaging of Topologically Unpaired Spin-Polarized Dirac Fermions
Authors:
Kenjiro K. Gomes,
Wonhee Ko,
Warren Mar,
Yulin Chen,
Zhi-Xun Shen,
Hari C. Manoharan
Abstract:
The motion of a relativistic particle is linked to its spin by the Dirac equation. Remarkably, electrons in two-dimensional materials can mimic such Dirac particles but must always appear in pairs of opposite spin chirality. Using topological ideas of chiral boundary electrons wrap** a three-dimensional crystal with tuned spin-orbit coupling, we show that elusive unpaired Dirac fermions exist…
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The motion of a relativistic particle is linked to its spin by the Dirac equation. Remarkably, electrons in two-dimensional materials can mimic such Dirac particles but must always appear in pairs of opposite spin chirality. Using topological ideas of chiral boundary electrons wrap** a three-dimensional crystal with tuned spin-orbit coupling, we show that elusive unpaired Dirac fermions exist on the surface of a topological insulator parent matrix, pure antimony. Using scanning tunneling microscopy and angle-resolved photoemission spectroscopy we image coherent quantum interference between these particles, map their helical spin texture, and ultimately observe a transition to a single Dirac fermion distinguished by backscattering suppression via Berry phase interference. The robust dynamics of these unique spin-polarized carriers envisage future applications in spintronics and topological quantum computation.
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Submitted 23 September, 2009; v1 submitted 4 September, 2009;
originally announced September 2009.
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Doped Kagome System as Exotic Superconductor
Authors:
Wing-Ho Ko,
Patrick A. Lee,
Xiao-Gang Wen
Abstract:
A Chern--Simons theory for the doped spin-1/2 kagomé system is constructed, from which it is shown that the system is an exotic superconductor that breaks time-reversal symmetry. It is also shown that the system carries minimal vortices of flux $hc/4e$ (as opposed to the usual $hc/2e$ in conventional superconductors) and contains fractional quasiparticles (including fermionic quasiparticles with…
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A Chern--Simons theory for the doped spin-1/2 kagomé system is constructed, from which it is shown that the system is an exotic superconductor that breaks time-reversal symmetry. It is also shown that the system carries minimal vortices of flux $hc/4e$ (as opposed to the usual $hc/2e$ in conventional superconductors) and contains fractional quasiparticles (including fermionic quasiparticles with \emph{semionic} mutual statistics and spin-1/2 quasiparticles with \emph{bosonic} self-statistics) in addition to the usual spin-1/2 fermionic Bougoliubov quasiparticle. Two Chern--Simons theories--one with an auxiliary gauge field kept and one with the auxiliary field and a redundant matter field directly eliminated--are presented and shown to be consistent with each other.
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Submitted 15 April, 2009; v1 submitted 8 April, 2008;
originally announced April 2008.
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Quantum Phase Extraction in Isospectral Electronic Nanostructures
Authors:
Christopher R. Moon,
Laila S. Mattos,
Brian K. Foster,
Gabriel Zeltzer,
Wonhee Ko,
Hari C. Manoharan
Abstract:
Quantum phase is not a direct observable and is usually determined by interferometric methods. We present a method to map complete electron wave functions, including internal quantum phase information, from measured single-state probability densities. We harness the mathematical discovery of drum-like manifolds bearing different shapes but identical resonances, and construct quantum isospectral…
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Quantum phase is not a direct observable and is usually determined by interferometric methods. We present a method to map complete electron wave functions, including internal quantum phase information, from measured single-state probability densities. We harness the mathematical discovery of drum-like manifolds bearing different shapes but identical resonances, and construct quantum isospectral nanostructures possessing matching electronic structure but divergent physical structure. Quantum measurement (scanning tunneling microscopy) of these "quantum drums" [degenerate two-dimensional electron states on the Cu(111) surface confined by individually positioned CO molecules] reveals that isospectrality provides an extra topological degree of freedom enabling robust quantum state transplantation and phase extraction.
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Submitted 15 March, 2008;
originally announced March 2008.
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Spontaneous spin ordering of Dirac spin liquid in a magnetic field
Authors:
Ying Ran,
Wing-Ho Ko,
Patrick A. Lee,
Xiao-Gang Wen
Abstract:
The Dirac spin liquid was proposed to be the ground state of the spin-1/2 Kagome antiferromagnets. In a magnetic field $B$, we show that the state with Fermi pocket is unstable to the Landau level (LL) state. The LL state breaks the spin rotation around the axis of the magnetic field. We find that the LL state has an in-plane 120$^{\circ}$ $q=0$ magnetization $M$ which scales with the external f…
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The Dirac spin liquid was proposed to be the ground state of the spin-1/2 Kagome antiferromagnets. In a magnetic field $B$, we show that the state with Fermi pocket is unstable to the Landau level (LL) state. The LL state breaks the spin rotation around the axis of the magnetic field. We find that the LL state has an in-plane 120$^{\circ}$ $q=0$ magnetization $M$ which scales with the external field $M\sim B^α$, where $α$ is an intrinsic calculable universal number of the Dirac spin liquid. We discuss the related experimental implications which can be used to detect the possible Dirac spin liquid phase in Herbertsmithite ZnCu$_3$(OH)$_6$Cl$_2$.
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Submitted 10 October, 2008; v1 submitted 24 October, 2007;
originally announced October 2007.
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Extended Gutzwiller Approximation for Inhomogeneous System
Authors:
Wing-Ho Ko,
Cody P. Nave,
Patrick A. Lee
Abstract:
The generalization of the Gutzwiller approximation to inhomogeneous systems is considered, with extra spin-and-site-dependent fugacity factors included. It is found that the inclusion of fugacity factors reconciles the seemingly contradictory choices of Gutzwiller factors used in the literature. Moreover, from the derivation of the Gutzwiller factors, it is shown that the Gutzwiller approximatio…
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The generalization of the Gutzwiller approximation to inhomogeneous systems is considered, with extra spin-and-site-dependent fugacity factors included. It is found that the inclusion of fugacity factors reconciles the seemingly contradictory choices of Gutzwiller factors used in the literature. Moreover, from the derivation of the Gutzwiller factors, it is shown that the Gutzwiller approximation breaks the rotational symmetry of the trial wavefunctions, and that different components of the spin-spin interaction need to be renormalized differently under the approximation. Various schemes to restore the rotational symmetry are discussed and are compared with results from variational Monte-Carlo calculations for the two-dimensional square-lattice antiferromagnet. Results along different paths within the full parameter space, which corresponds to different choices of fugacity factors in the literature, are also compared.
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Submitted 11 December, 2007; v1 submitted 26 September, 2007;
originally announced September 2007.
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Jacobian Elliptic Wave Solutions for the Wadati-Segur-Ablowitz Equation
Authors:
Chooi-Gim Rosy Teh,
W. K. Koo,
B. S. Lee
Abstract:
Jacobian elliptic travelling wave solutions for a new Hamiltonian amplitude equation determining some instabilities of modulated wave train are obtained. By mere variation of the Jacobian elliptic parameter $k^2$ from zero to one, these solutions are transformed from a trivial one to the known solitary solutions.
Jacobian elliptic travelling wave solutions for a new Hamiltonian amplitude equation determining some instabilities of modulated wave train are obtained. By mere variation of the Jacobian elliptic parameter $k^2$ from zero to one, these solutions are transformed from a trivial one to the known solitary solutions.
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Submitted 18 July, 1996;
originally announced July 1996.
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Boundary Yang-Baxter equation in the RSOS/SOS representation
Authors:
C. Ahn,
W. M. Koo
Abstract:
We construct and solve the boundary Yang-Baxter equation in the RSOS/SOS representation. We find two classes of trigonometric solutions; diagonal and non-diagonal. As a lattice model, these two classes of solutions correspond to RSOS/SOS models with fixed and free boundary spins respectively. Applied to (1+1)-dimenional quantum field theory, these solutions give the boundary scattering amplitude…
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We construct and solve the boundary Yang-Baxter equation in the RSOS/SOS representation. We find two classes of trigonometric solutions; diagonal and non-diagonal. As a lattice model, these two classes of solutions correspond to RSOS/SOS models with fixed and free boundary spins respectively. Applied to (1+1)-dimenional quantum field theory, these solutions give the boundary scattering amplitudes of the particles. For the diagonal solution, we propose an algebraic Bethe ansatz method to diagonalize the SOS-type transfer matrix with boundary and obtain the Bethe ansatz equations.
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Submitted 20 March, 1996; v1 submitted 17 August, 1995;
originally announced August 1995.
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$gl(n|m)$ color Calogero-Sutherland models and Super Yangian Algebra
Authors:
C. Ahn,
W. M. Koo
Abstract:
A supersymmetric extension of the color Calogero-Sutherland model is considered based on the Yangian $Y(gl(n|m))$. The algebraic structure of the model is discussed in some details. We show that the commuting conserved quantities can be generated from the super-quantum determinant, thus establishing the integrability of the model. In addition, rational limit of the model is studied where the Yan…
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A supersymmetric extension of the color Calogero-Sutherland model is considered based on the Yangian $Y(gl(n|m))$. The algebraic structure of the model is discussed in some details. We show that the commuting conserved quantities can be generated from the super-quantum determinant, thus establishing the integrability of the model. In addition, rational limit of the model is studied where the Yangian symmetry degenerates into a super loop algebra.
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Submitted 10 May, 1995;
originally announced May 1995.
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Oriented Polymers: A Transfer Matrix Calculation
Authors:
W. M. Koo
Abstract:
Based on transfer matrix techniques and finite size scaling, we study the oriented polymer (self-avoiding walk) with nearest neighbor interaction. In the repulsive regime, various critical exponents are computed and compared with exact values predicted recently. The polymer is also found to undergo a spiral transition for sufficiently strong attractive interaction. The fractal dimension of the p…
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Based on transfer matrix techniques and finite size scaling, we study the oriented polymer (self-avoiding walk) with nearest neighbor interaction. In the repulsive regime, various critical exponents are computed and compared with exact values predicted recently. The polymer is also found to undergo a spiral transition for sufficiently strong attractive interaction. The fractal dimension of the polymer is computed in the repulsive, attractive regimes and at the spiral transition point. The later is found to be different from that at the collapse transition of ordinary self-avoiding walk.
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Submitted 1 June, 1995; v1 submitted 8 December, 1994;
originally announced December 1994.