Showing 1–19 of 19 results for author: Kim, Y D

Pixel-wise classification in graphene-detection with tree-based machine learning algorithms

Authors: Woon Hyung Cho, Jiseon Shin, Young Duck Kim, George J. Jung

Abstract: Mechanical exfoliation of graphene and its identification by optical inspection is one of the milestones in condensed matter physics that sparked the field of 2D materials. Finding regions of interest from the entire sample space and identification of layer number is a routine task potentially amenable to automatization. We propose supervised pixel-wise classification methods showing a high perfor… ▽ More Mechanical exfoliation of graphene and its identification by optical inspection is one of the milestones in condensed matter physics that sparked the field of 2D materials. Finding regions of interest from the entire sample space and identification of layer number is a routine task potentially amenable to automatization. We propose supervised pixel-wise classification methods showing a high performance even with a small number of training image datasets that require short computational time without GPU. We introduce four different tree-based machine learning algorithms -- decision tree, random forest, extreme gradient boost, and light gradient boosting machine. We train them with five optical microscopy images of graphene, and evaluate their performances with multiple metrics and indices. We also discuss combinatorial machine learning models between the three single classifiers and assess their performances in identification and reliability. The code developed in this paper is open to the public and will be released at github.com/gjung-group/Graphene_segmentation. △ Less

Submitted 24 August, 2022; originally announced September 2022.

Comments: 12 pages, 6 figures

Triaxially strained suspended graphene for large-area pseudo-magnetic fields

Authors: M. Luo, H. Sun, Z. Qi, K. Lu, M. Chen, D. Kang, Y. Kim, D. Burt, X. Yu, C. Wang, Y. D. Kim, H. Wang, Q. -J. Wang, D. Nam

Abstract: Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields. While theoretical works proposed the possibility of creating large-area pseudo-magnetic fields by straining monolayer graphene along three crystallographic directions, clear experimental demonstration of such promising devices remains elu… ▽ More Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields. While theoretical works proposed the possibility of creating large-area pseudo-magnetic fields by straining monolayer graphene along three crystallographic directions, clear experimental demonstration of such promising devices remains elusive. Herein, we experimentally demonstrate a triaxially strained suspended graphene structure that has the potential to possess large-scale and quasi-uniform pseudo-magnetic fields. Our structure employs uniquely designed metal electrodes that function both as stressors and metal contacts for current injection. Raman characterization and tight-binding simulations suggest the possibility of achieving pseudo-magnetic fields over a micrometer-scale area. Current-voltage measurements confirm an efficient current injection into graphene, showing the potential of our devices for a new class of optoelectronic applications. We also theoretically propose a photonic crystal-based laser structure that obtains strongly localized optical fields overlap** with the spatial area under uniform pseudo-magnetic fields, thus presenting a practical route towards the realization of graphene lasers. △ Less

Submitted 9 February, 2022; v1 submitted 8 October, 2021; originally announced October 2021.

Anisotropic Behavior of Excitons in Single Crystal α-SnS

Authors: Van Long Le, Do Duc Cuong, Hoang Tung Nguyen, Xuan Au Nguyen, Bogyu Kim, Kyu** Kim, Wonjun Lee, Soon Cheol Hong, Tae Jung Kim, Young Dong Kim

Abstract: We investigate analytically the anisotropic dielectric properties of single crystal α-SnS near the fundamental absorption edge by considering atomic orbitals. Most striking is the excitonic feature in the armchair- (b-) axis direction, which is particularly prominent at low temperatures. To determine the origin of this anisotropy, we perform first-principles calculations using the GW0 Bethe-Salpet… ▽ More We investigate analytically the anisotropic dielectric properties of single crystal α-SnS near the fundamental absorption edge by considering atomic orbitals. Most striking is the excitonic feature in the armchair- (b-) axis direction, which is particularly prominent at low temperatures. To determine the origin of this anisotropy, we perform first-principles calculations using the GW0 Bethe-Salpeter equation (BSE) including the electron-hole interaction. The results show that the anisotropic dielectric characteristics are a direct result of the natural anisotropy of p orbitals. In particular, this dominant excitonic feature originates from the py orbital at the saddle point in the Γ-Y region. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Comments: 15 pages, 5 figures

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Authors: Dongjea Seo, Dong Yun Lee, Junyoung Kwon, Jea Jung Lee, Takashi Taniguchi, Kenji Watanabe, Gwan-Hyoung Lee, Keun Soo Kim, James Hone, Young Duck Kim, Heon-** Choi

Abstract: A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in develo** high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, int… ▽ More A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in develo** high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, intrinsic misalignment between the work function of pristine graphene and the conduction band of MoS2 results in a large threshold voltage for the FETs, because of which Ohmic contact behaviors are observed only at very high gate voltages and carrier concentrations (~1013 cm-2). Here, we present high-performance monolayer MoS2 FETs with Ohmic contact at a modest gate voltage by using a chemical-vapor-deposited (CVD) nitrogen-doped graphene with a high intrinsic electron carrier density. The CVD nitrogen-doped graphene and monolayer MoS2 hybrid FETs platform exhibited a large negative shifted threshold voltage of -54.2 V and barrier-free Ohmic contact under zero gate voltage. Transparent contact by nitrogen-doped graphene led to a 214% enhancement in the on-current and a four-fold improvement in the field-effect carrier mobility of monolayer MoS2 FETs compared with those of a pristine graphene electrode platform. The transport measurements, as well as Raman and X-ray photoelectron spectroscopy analyses before and after thermal annealing, reveal that the atomic C-N bonding in the CVD nitrogen-doped graphene is responsible for the dominant effects of electron do**. Large-scale nitrogen-doped graphene electrodes provide a promising device platform for the development of high-performance devices and the study of unique quantum behaviors. △ Less

Submitted 18 July, 2019; originally announced July 2019.

Comments: 25 pages, 4 figures

Report number: Appl. Phys. Lett. 115, 012104 (2019)

Journal ref: Appl. Phys. Lett.115, 012104 (2019); https://doi.org/10.1063/1.5094682

Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures

Authors: Tae-Eon Park, Licong Peng, **ghua Liang, Ali Hallal, Fehmi Sami Yasin, Xichao Zhang, Sung Jong Kim, Kyung Mee Song, Kwangsu Kim, Markus Weigand, Gisela Schuetz, Simone Finizio, Joerg Raabe, Karin Garcia, **g Xia, Yan Zhou, Motohiko Ezawa, Xiaoxi Liu, Joonyeon Chang, Hyun Cheol Koo, Young Duck Kim, Mairbek Chshiev, Albert Fert, Hongxin Yang, Xiuzhen Yu , et al. (1 additional authors not shown)

Abstract: Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy… ▽ More Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy, leading to the formation of topological magnetic textures such as skyrmions through the Dzyaloshinskii-Moriya interaction (DMI). Here, we report the experimental observation of Néel-type chiral magnetic skyrmions and their lattice (SkX) formation in a vdW ferromagnet Fe3GeTe2 (FGT). We demonstrate the ability to drive individual skyrmion by short current pulses along a vdW heterostructure, FGT/h-BN, as highly required for any skyrmion-based spintronic device. Using first principle calculations supported by experiments, we unveil the origin of DMI being the interfaces with oxides, which then allows us to engineer vdW heterostructures for desired chiral states. Our finding opens the door to topological spin textures in the 2D vdW magnet and their potential device application. △ Less

Submitted 25 June, 2020; v1 submitted 2 July, 2019; originally announced July 2019.

Comments: 26 pages, 5 figures

Journal ref: Phys. Rev. B 103, 104410 (2021)

Ultrafast Graphene Light Emitter

Authors: Young Duck Kim, Yuanda Gao, Ren-Jye Shiue, Lei Wang, Ozgur Burak Aslan, Myung-Ho Bae, Hyungsik Kim, Dongjea Seo, Heon-** Choi, Suk Hyun Kim, Andrei Nemilentsau, Tony Low, Cheng Tan, Dmitri K. Efetov, Takashi Taniguchi, Kenji Watanabe, Kenneth L. Shepard, Tony F. Heinz, Dirk Englund, James Hone

Abstract: Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achie… ▽ More Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications. △ Less

Submitted 24 October, 2017; originally announced October 2017.

Comments: 18 pages, 4 figures

Bright visible light emission from graphene

Authors: Young Duck Kim, Hakseong Kim, Yu** Cho, Ji Hoon Ryoo, Cheol-Hwan Park, Pilkwang Kim, Yong Seung Kim, Sunwoo Lee, Yilei Li, Seung-Nam Park, Yong Shim Yoo, Duhee Yoon, Vincent E. Dorgan, Eric Pop, Tony F. Heinz, James Hone, Seung-Hyun Chun, Hyeonsik Cheong, Sang Wook Lee, Myung-Ho Bae, Yun Daniel Park

Abstract: Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of state-of-the-art photodetectors, optical modulators, and plasmonic devices. In addition, electrically biased graphene on SiO2 substrates can be used as a low-efficien… ▽ More Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of state-of-the-art photodetectors, optical modulators, and plasmonic devices. In addition, electrically biased graphene on SiO2 substrates can be used as a low-efficiency emitter in the mid-infrared range. However, emission in the visible range has remained elusive. Here we report the observation of bright visible-light emission from electrically biased suspended graphenes. In these devices, heat transport is greatly minimised; thus hot electrons (~ 2800 K) become spatially localised at the centre of graphene layer, resulting in a 1000-fold enhancement in the thermal radiation efficiency. Moreover, strong optical interference between the suspended graphene and substrate can be utilized to tune the emission spectrum. We also demonstrate the scalability of this technique by realizing arrays of chemical-vapour-deposited graphene bright visible-light emitters. These results pave the way towards the realisation of commercially viable large-scale, atomically-thin, flexible and transparent light emitters and displays with low-operation voltage, and graphene-based, on-chip ultrafast optical communications. △ Less

Submitted 13 September, 2017; originally announced September 2017.

Comments: 63 page

Journal ref: Nature Nanotechnology 2015

Surface buckling of phosphorene materials: determination, origin and influence on electronic structure

Authors: Zhongwei Dai, Wencan **, Jie-Xiang Yu, Maxwell Grady, Jerzy T. Sadowski, Young Duck Kim, James Hone, Jiadong Zang, Richard M. Osgood, Jr., Karsten Pohl

Abstract: The surface structure of phosphorene crystals materials is determined using surface sensitive dynamical micro-spot low energy electron diffraction (μLEED) analysis using a high spatial resolution low energy electron microscopy (LEEM) system. Samples of (\textit{i}) crystalline cleaved black phosphorus (BP) at 300 K and (\textit{ii}) exfoliated few-layer phosphorene (FLP) of about 10 nm thicknes, w… ▽ More The surface structure of phosphorene crystals materials is determined using surface sensitive dynamical micro-spot low energy electron diffraction (μLEED) analysis using a high spatial resolution low energy electron microscopy (LEEM) system. Samples of (\textit{i}) crystalline cleaved black phosphorus (BP) at 300 K and (\textit{ii}) exfoliated few-layer phosphorene (FLP) of about 10 nm thicknes, which were annealed at 573 K in vacuum were studied. In both samples, a significant surface buckling of 0.22 Å and 0.30 Å, respectively, is measured, which is one order of magnitude larger than previously reported. Using first principle calculations, the presence of surface vacancies is attributed not only to the surface buckling in BP and FLP, but also the previously reported intrinsic hole do** of phosphorene materials. △ Less

Submitted 22 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. Materials 1, 074003 (2017)

Interfacial Charge Transfer Circumventing Momentum Mismatch at 2D van der Waals Heterojunctions

Authors: Haiming Zhu, Jue Wang, Zizhou Gong, Young Duck Kim, Martin Gustafsson, James Hone, Xiaoyang Zhu

Abstract: Interfacial charge separation and recombination at heterojunctions of monolayer transition metal dichalcogenides (TMDCs) are of interest to two dimensional optoelectronic technologies. These processes can involve large changes in parallel momentum vector due to the confinement of electrons and holes to the K-valleys in each layer. Since these high-momentum valleys are usually not aligned across th… ▽ More Interfacial charge separation and recombination at heterojunctions of monolayer transition metal dichalcogenides (TMDCs) are of interest to two dimensional optoelectronic technologies. These processes can involve large changes in parallel momentum vector due to the confinement of electrons and holes to the K-valleys in each layer. Since these high-momentum valleys are usually not aligned across the interface of two TMDC monolayers, how parallel momentum is conserved in the charge separation or recombination process becomes a key question. Here we probe this question using the model system of a type-II heterojunction formed by MoS2 and WSe2 monolayers and the experimental technical of femtosecond pump-probe spectroscopy. Upon photo-excitation specifically of WSe2 at the heterojunction, we observe ultrafast (<40 fs) electron transfer from WSe2 to MoS2, independent of the angular alignment and, thus, momentum mismatch between the two TMDCs. The resulting interlayer charge transfer exciton decays via nonradiatively recombination, with rates varying by up to three-orders of magnitude from sample to sample, but with no correlation with inter-layer angular alignment. We suggest that the initial interfacial charge separation and the subsequent interfacial charge recombination processes circumvent momentum mismatch via excess electronic energy and via defect-mediated recombination, respectively. △ Less

Submitted 21 February, 2017; originally announced February 2017.

Comments: 18 page + 7 pages SI

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Authors: Faisal Ahmed, Young Duck Kim, Min Sup Choi, Xiaochi Liu, Deshun Qu, Zheng Yang, Jiayang Hu, Irving P. Herman, James Hone, Won Jong Yoo

Abstract: This study addresses high electric field transport in multilayer black phosphorus (BP) field effect transistors (FETs) with self-heating and thermal spreading by dielectric engineering. Interestingly, we found that multilayer BP device on a SiO2 substrate exhibited a maximum current density of 3.3 x 10E10 A/m2 at an electric field of 5.58 MV/m, several times higher than multilayer MoS2. Our breakd… ▽ More This study addresses high electric field transport in multilayer black phosphorus (BP) field effect transistors (FETs) with self-heating and thermal spreading by dielectric engineering. Interestingly, we found that multilayer BP device on a SiO2 substrate exhibited a maximum current density of 3.3 x 10E10 A/m2 at an electric field of 5.58 MV/m, several times higher than multilayer MoS2. Our breakdown thermometry analysis revealed that self-heating was impeded along BP-dielectric interface, resulting in a thermal plateau inside the channel and eventual Joule breakdown. Using a size-dependent electro-thermal transport model, we extracted an interfacial thermal conductance of 1-10 MW/m2 K for the BP-dielectric interfaces. By using hBN as a dielectric material for BP instead of thermally resistive SiO2 (about 1.4 W/m K), we observed a 3 fold increase in breakdown power density and a relatively higher electric field endurance together with efficient and homogenous thermal spreading because hBN had superior structural and thermal compatibility with BP. We further confirmed our results based on micro-Raman spectroscopy and atomic force microscopy, and observed that BP devices on hBN exhibited centrally localized hotspots with a breakdown temperature of 600K, while the BP device on SiO2 exhibited a hotspot in the vicinity of the electrode at 520K. △ Less

Submitted 31 October, 2016; originally announced October 2016.

Comments: 24 pages, 5 figures

Influence of the Substrate Material on the Optical Properties of Tungsten Diselenide Monolayers

Authors: Sina Lippert, Lorenz Maximilian Schneider, Dylan Renaud, Kyung Nam Kang, Obafunso Ajayi, Marc-Uwe Halbich, Oday M. Abdulmunem, Xing Lin, Jan Kuhnert, Khaleel Hassoon, Saeideh Edalati-Boostan, Young Duck Kim, Wolfram Heimbrodt, Eui-Hyeok Yang, James Hone, Arash Rahimi-Iman

Abstract: Monolayers of transition-metal dichalcogenides such as WSe2 have become increasingly attractive due to their potential in electrical and optical applications. Because the properties of these 2D systems are known to be affected by their surroundings, we report how the choice of the substrate material affects the optical properties of monolayer WSe2. To accomplish this study, pump-density-dependent… ▽ More Monolayers of transition-metal dichalcogenides such as WSe2 have become increasingly attractive due to their potential in electrical and optical applications. Because the properties of these 2D systems are known to be affected by their surroundings, we report how the choice of the substrate material affects the optical properties of monolayer WSe2. To accomplish this study, pump-density-dependent micro-photoluminescence measurements are performed with time-integrating and time-resolving acquisition techniques. Spectral information and power-dependent mode intensities are compared at 290K and 10K for exfoliated WSe2 on SiO2/Si, sapphire (Al2O3), hBN/Si3N4/Si, and MgF2, indicating substrate-dependent appearance and strength of exciton, trion, and biexciton modes. Additionally, one CVD-grown WSe2 monolayer on sapphire is included in this study for direct comparison with its exfoliated counterpart. Time-resolved micro-photoluminescence shows how radiative decay times strongly differ for different substrate materials. Our data indicates exciton-exciton annihilation as a shortening mechanism at room temperature, and subtle trends in the decay rates in correlation to the dielectric environment at cryogenic temperatures. On the measureable time scales, trends are also related to the extent of the respective 2D-excitonic modes' appearance. This result highlights the importance of further detailed characterization of exciton features in 2D materials, particularly with respect to the choice of substrate. △ Less

Submitted 30 September, 2016; originally announced October 2016.

Optical Characterization of PtSi/Si by Spectroscopic Ellipsometry

Authors: Van Long Le, Tae Jung Kim, Han Gyeol Park, Hwa Seob Kim, Chang Hyun Yoo, Hyoung Uk Kim, Young Dong Kim, Junsoo Kim, Solyee Im, Won Chul Choi, Seung Eon Moon, Eun Soo Nam and

Abstract: We report optical characterization of PtSi films for thermoelectric device applications by nondestructive spectroscopic ellipsometry (SE). Pt monolayer and Pt-Si multilayer which consists of 3 pairs of Pt and Si layers were deposited on p-doped-silicon substrates by sputtering method and then rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interfac… ▽ More We report optical characterization of PtSi films for thermoelectric device applications by nondestructive spectroscopic ellipsometry (SE). Pt monolayer and Pt-Si multilayer which consists of 3 pairs of Pt and Si layers were deposited on p-doped-silicon substrates by sputtering method and then rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interface. Pseudodielectric function data <ε> = <ε1> + i<ε2> of the PtSi/Si samples were obtained from 1.12 to 6.52 eV by using spectroscopic ellipsometry. Employing Tauc-Lorentz and Drude models, the dielectric function (ε) of PtSi films were determined. We found that the composition ratio of Pt:Si is nearly 1:1 for PtSi monolayer and we observed transitions between occupied and unoccupied states in Pt 5d states. We also observed formation of PtSi layers in Pt-Si multilayer sample. The SE results were confirmed by the transmission electron microscopy and energy dispersive X-ray spectroscopy. △ Less

Submitted 12 June, 2016; originally announced June 2016.

Comments: 18 pages, 10 figures, ICAMD 2015 conference

Nature of the Quantum Metal in a Two-Dimensional Crystalline Superconductor

Authors: A. W. Tsen, B. Hunt, Y. D. Kim, Z. J. Yuan, S. Jia, R. J. Cava, J. Hone, P. Kim, C. R. Dean, A. N. Pasupathy

Abstract: Two-dimensional (2D) materials are not expected to be metals at low temperature due to electron localization. Consistent with this, pioneering studies on thin films reported only superconducting and insulating ground states, with a direct transition between the two as a function of disorder or magnetic field. However, more recent works have revealed the presence of an intermediate metallic state o… ▽ More Two-dimensional (2D) materials are not expected to be metals at low temperature due to electron localization. Consistent with this, pioneering studies on thin films reported only superconducting and insulating ground states, with a direct transition between the two as a function of disorder or magnetic field. However, more recent works have revealed the presence of an intermediate metallic state occupying a substantial region of the phase diagram whose nature is intensely debated. Here, we observe such a state in the disorder-free limit of a crystalline 2D superconductor, produced by mechanical co-lamination of NbSe$_2$ in inert atmosphere. Under a small perpendicular magnetic field, we induce a transition from superconductor to the intermediate metallic state. We find a new power law scaling with field in this phase, which is consistent with the Bose metal model where metallic behavior arises from strong phase fluctuations caused by the magnetic field. △ Less

Submitted 5 October, 2015; v1 submitted 30 July, 2015; originally announced July 2015.

Comments: 9 pages: 6 pages main text, 3 pages supplementary figures

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

Authors: A. W. Tsen, R. Hovden, D. Z. Wang, Y. D. Kim, J. Okamoto, K. A. Spoth, Y. Liu, W. J. Lu, Y. P. Sun, J. Hone, L. F. Kourkoutis, P. Kim, A. N. Pasupathy

Abstract: The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS2 in the two-dimension… ▽ More The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS2 in the two-dimensional (2D) limit. We first demonstrate that the intrinsic properties of atomically-thin flakes are preserved by encapsulation with hexagonal boron nitride in inert atmosphere. We use this facile assembly method together with TEM and transport measurements to probe the nature of the 2D state and show that its conductance is dominated by discommensurations. The discommensuration structure can be precisely tuned in few-layer samples by an in-plane electric current, allowing continuous electrical control over the discommensuration-melting transition in 2D. △ Less

Submitted 14 May, 2015; originally announced May 2015.

Journal ref: Proceedings of the National Academy of Sciences 112, 15054-15059 (2015)

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Authors: Xu Cui, Gwan-Hyoung Lee, Young Duck Kim, Ghidewon Arefe, Pinshane Y. Huang, Chul-Ho Lee, Daniel A. Chenet, Xian Zhang, Lei Wang, Fan Ye, Filippo Pizzocchero, Bjarke S. Jessen, Kenji Watanabe, Takashi Taniguchi, David A. Muller, Tony Low, Philip Kim, James Hone

Abstract: Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at l… ▽ More Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at low temperature (T), which has hampered efforts to observe its intrinsic quantum transport behaviors. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering and approach the intrinsic limit, we developed a van der Waals (vdW) heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride (hBN), and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Multi-terminal magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2 at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude in the density of charged impurities, indicating that performance at low T in previous studies was limited by extrinsic factors rather than defects in the MoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first time in high-mobility monolayer and few-layer MoS2. This novel device platform therefore opens up a new way toward measurements of intrinsic properties and the study of quantum transport phenomena in 2D semiconducting materials. △ Less

Submitted 22 December, 2014; v1 submitted 18 December, 2014; originally announced December 2014.

Comments: 21 pages, 4 figures, 1 table; fix the affiliation and acknowledgements;remove the refs. 36 on page 7

Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2

Authors: Yilei Li, Jonathan Ludwig, Tony Low, Alexey Chernikov, Xu Cui, Ghidewon Arefe, Young Duck Kim, Arend M. van der Zande, Albert Rigosi, Heather M. Hill, Suk Hyun Kim, James Hone, Zhiqiang Li, Dmitry Smirnov, Tony F. Heinz

Abstract: We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low do** densities, the neutral and charged excitons shift linearly with field strength at a rate of $\mp$ 0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley de… ▽ More We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low do** densities, the neutral and charged excitons shift linearly with field strength at a rate of $\mp$ 0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley degeneracy. The magnitude of the Zeeman shift agrees with predicted magnetic moments for carriers in the conduction and valence bands. The relative intensity of neutral and charged exciton emission is modified by the magnetic field, reflecting the creation of field-induced valley polarization. At high do** levels, the Zeeman shift of the charged exciton increases to $\mp$ 0.18 meV/T. This enhancement is attributed to many-body effects on the binding energy of the charged excitons. △ Less

Submitted 30 September, 2014; originally announced September 2014.

Journal ref: Phys. Rev. Lett. 113, 266804 (2014)

Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

Authors: Yong Seung Kim, Jae Hong Lee, Young Duck Kim, Sahng-Kyoon Jerng, Kisu Joo, Eunho Kim, Jongwan Jung, Euijoon Yoon, Yun Daniel Park, Sunae Seo, Seung-Hyun Chun

Abstract: A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during methane decomposition process into their active species (CHx<4), assisted by the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleatio… ▽ More A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during methane decomposition process into their active species (CHx<4), assisted by the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleation density) has a maximum (minimum) at 50 W and saturates when the plasma power is higher than 120 W because hydrogen partial pressures are effectively tuned by a simple control of the plasma power. Raman spectroscopy and transport measurements show that decomposed methane alone can provide sufficient amount of hydrogen species for high-quality graphene synthesis by PECVD. △ Less

Submitted 26 June, 2013; v1 submitted 5 March, 2012; originally announced March 2012.

Comments: 22 pages, 6 figures

Journal ref: Nanoscale, 5, 1221 (2013)

Interference effect on Raman spectrum of graphene on SiO_2/Si

Authors: Duhee Yoon, Hyerim Moon, Young-Woo Son, ** Sik Choi, Bae Ho Park, Young Hun Cha, Young Dong Kim, Hyeonsik Cheong

Abstract: The intensity ratio between two major Raman bands in graphene is one of the most important information for physics of graphene and has been believed to represent various intrinsic properties of graphene without critical assessment of extrinsic effects. We report a micro Raman spectroscopy study on the Raman intensity ratio of the 2D band to the G Raman band of graphene varying the thickness of d… ▽ More The intensity ratio between two major Raman bands in graphene is one of the most important information for physics of graphene and has been believed to represent various intrinsic properties of graphene without critical assessment of extrinsic effects. We report a micro Raman spectroscopy study on the Raman intensity ratio of the 2D band to the G Raman band of graphene varying the thickness of dielectric layers (SiO_2) underneath it. The ratio is shown to change by almost 370% when the thickness is varied by 60%. The large variation in the ratio is well explained by theoretical calculations considering multiple Raman scattering events at the interfaces. Our analysis shows that the interference effect is critical in extracting the intrinsic 2D to G intensity ratio and therefore must be taken into account in extracting various physical properties of graphene from Raman measurements. △ Less

Submitted 29 August, 2009; originally announced August 2009.

Comments: 21 pages, 5 figures. Phys. Rev. B; in press

Journal ref: Phys. Rev. B 80, 125422 (2009)

X-ray absorption spectroscopy study of diluted magnetic semiconductors: Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te)

Authors: Kwanghyun Cho, Hoon Koh, S. -J. Oh, Hyeong-Do Kim, Moonsup Han, J. -H. Park, C. T. Chen, Y. D. Kim, J. -S. Kim, B. T. Jonker

Abstract: We have investigated 3d electronic states of doped transition metals in II-VI diluted magnetic semiconductors, Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te), using the transition-metal L2,3-edge X-ray absorption spectroscopy (XAS) measurements. In order to explain the XAS spectra, we employed a tetragonal cluster model calculation, which includes not only the full ionic multiplet structu… ▽ More We have investigated 3d electronic states of doped transition metals in II-VI diluted magnetic semiconductors, Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te), using the transition-metal L2,3-edge X-ray absorption spectroscopy (XAS) measurements. In order to explain the XAS spectra, we employed a tetragonal cluster model calculation, which includes not only the full ionic multiplet structure but also configuration interaction (CI). The results show that CI is essential to describe the experimental spectra adequately, indicating the strong hybridization between the transition metal 3d and the ligand p orbitals. In the study of Zn1-xMnxY (Y = Se, Te), we also found considerable spectral change in the Mn L2,3-edge XAS spectra for different ligands, confirming the importance of the hybridization effects in these materials. △ Less

Submitted 18 September, 2000; originally announced September 2000.

Comments: This paper consists of 22 pages including 4 figures. This paper is submitted to Physical Review B