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Facilitating the systematic nanoscale study of battery materials by atom probe tomography through in-situ metal coating
Authors:
Mahander P Singh,
Eric V Woods,
Se Ho Kim,
Chanwon Jung,
Leonardo S. Aota,
Baptiste Gault
Abstract:
Through its capability for 3D map** of Li at the nanoscale, atom probe tomography (APT) is poised to play a key role in understanding the microstructural degradation of lithium-ion batteries (LIB) during successive charge and discharge cycles. However, APT application to materials for LIB is plagued by the field induced delithiation (deintercalation) of Li-ions during the analysis itself that pr…
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Through its capability for 3D map** of Li at the nanoscale, atom probe tomography (APT) is poised to play a key role in understanding the microstructural degradation of lithium-ion batteries (LIB) during successive charge and discharge cycles. However, APT application to materials for LIB is plagued by the field induced delithiation (deintercalation) of Li-ions during the analysis itself that prevents the precise assessment of the Li distribution. Here, we showcase how a thin Cr-coating, in-situ formed on APT specimens of NMC811 in the focused-ion beam (FIB), preserves the sample's integrity and circumvent this deleterious delithiation. Cr-coated specimens demonstrated remarkable improvements in data quality and virtually eliminated premature specimen failures, allowing for more precise measurements via. improved statistics. Through improved data analysis, we reveal substantial cation fluctuations in commercial grade NMC811, including complete grains of LiMnO. The current methodology stands out for its simplicity and cost-effectiveness and is a viable approach to prepare battery cathodes and anodes for systematic APT studies.
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Submitted 14 September, 2023;
originally announced September 2023.
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Micromechanical origin of plasticity and hysteresis in nest-like packings
Authors:
Yashraj Bhosale,
Nicholas Weiner,
Alex Butler,
Seung Hyun Kim,
Mattia Gazzola,
Hunter King
Abstract:
Disordered packings of unbonded, semiflexible fibers represent a class of materials spanning contexts and scales. From twig-based bird nests to unwoven textiles, bulk mechanics of disparate systems emerge from the bending of constituent slender elements about impermanent contacts. In experimental and computational packings of wooden sticks, we identify prominent features of their response to cycli…
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Disordered packings of unbonded, semiflexible fibers represent a class of materials spanning contexts and scales. From twig-based bird nests to unwoven textiles, bulk mechanics of disparate systems emerge from the bending of constituent slender elements about impermanent contacts. In experimental and computational packings of wooden sticks, we identify prominent features of their response to cyclic oedometric compression: non-linear stiffness, transient plasticity, and eventually repeatable velocity-independent hysteresis. We trace these features to their micromechanic origins, identified in characteristic appearance, disappearance, and displacement of internal contacts.
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Submitted 1 December, 2021;
originally announced December 2021.
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Statistical Mechanics of Topological Fluctuations in Glass-Forming Liquids
Authors:
Katelyn A. Kirchner,
Seong H. Kim,
John C. Mauro
Abstract:
All liquids are topologically disordered materials; however, the degree of disorder can vary as a result of internal fluctuations in structure and topology. These fluctuations depend on both the composition and temperature of the system. Most prior work has considered the mean values of liquid or glass properties, such as the average number of topological degrees of freedom per atom; however, the…
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All liquids are topologically disordered materials; however, the degree of disorder can vary as a result of internal fluctuations in structure and topology. These fluctuations depend on both the composition and temperature of the system. Most prior work has considered the mean values of liquid or glass properties, such as the average number of topological degrees of freedom per atom; however, the localized fluctuations in properties also play a key role in governing the macroscopic characteristics of any glass-forming system. This paper proposes a generalized approach for modeling topological fluctuations in glass-forming liquids by linking the statistical mechanics of the disordered structure to topological constraint theory. In doing so we introduce the contributions of localized fluctuations into the calculation of the topological degrees of freedoms in the network. With this approach the full distribution of properties in the disordered network can be calculated as an arbitrary function of composition, temperature, and thermal history (for the nonequilibrium glassy state). The scope of this current investigation focuses on describing topological fluctuations in liquids, concentrating on composition and temperature effects.
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Submitted 4 April, 2018;
originally announced April 2018.
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Ultrafast Graphene Light Emitter
Authors:
Young Duck Kim,
Yuanda Gao,
Ren-Jye Shiue,
Lei Wang,
Ozgur Burak Aslan,
Myung-Ho Bae,
Hyungsik Kim,
Dongjea Seo,
Heon-** Choi,
Suk Hyun Kim,
Andrei Nemilentsau,
Tony Low,
Cheng Tan,
Dmitri K. Efetov,
Takashi Taniguchi,
Kenji Watanabe,
Kenneth L. Shepard,
Tony F. Heinz,
Dirk Englund,
James Hone
Abstract:
Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achie…
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Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.
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Submitted 24 October, 2017;
originally announced October 2017.
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Atomically Abrupt Topological p-n Junction
Authors:
Sung Hwan Kim,
Kyung-Hwan **,
Byung Woo Kho,
Byeong-Gyu Park,
Feng Liu,
Jun Sung Kim,
Han Woong Yeom
Abstract:
Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Unique electronic properties of a 'topological' p-n junction were prop…
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Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Unique electronic properties of a 'topological' p-n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p-n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p-n junction of topological surface states (TSS's) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS's as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well defined topological p-n junctions with the scalability down to atomic dimensions
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Submitted 23 August, 2017;
originally announced August 2017.
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Topological phase transition and quantum spin Hall edge states of antimony few layers
Authors:
Sung Hwan Kim,
Kyung-Hwan **,
Joonbum Park,
Jun Sung Kim,
Seung-Hoon Jhi,
Han Woong Yeom
Abstract:
While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by sc…
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While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates the topological edge states emerged through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit miscroscopic aspects of the quantum spin Hall phase and its quantum phase transition.
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Submitted 11 April, 2016;
originally announced April 2016.
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Transforming a Surface State of Topological Insulator by a Bi Cap** Layer
Authors:
Han Woong Yeom,
Sung Hwan Kim,
Woo Jong Shin,
Kyung-Hwan **,
Joonbum Park,
Tae-Hwan Kim,
Jun Sung Kim,
Hirotaka Ishikawa,
Kazuyuki Sakamoto,
Seung-Hoon Jhi
Abstract:
We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong elec…
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We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states kee** the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.
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Submitted 17 November, 2014;
originally announced November 2014.
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Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
Authors:
Yilei Li,
Jonathan Ludwig,
Tony Low,
Alexey Chernikov,
Xu Cui,
Ghidewon Arefe,
Young Duck Kim,
Arend M. van der Zande,
Albert Rigosi,
Heather M. Hill,
Suk Hyun Kim,
James Hone,
Zhiqiang Li,
Dmitry Smirnov,
Tony F. Heinz
Abstract:
We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low do** densities, the neutral and charged excitons shift linearly with field strength at a rate of $\mp$ 0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley de…
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We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low do** densities, the neutral and charged excitons shift linearly with field strength at a rate of $\mp$ 0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley degeneracy. The magnitude of the Zeeman shift agrees with predicted magnetic moments for carriers in the conduction and valence bands. The relative intensity of neutral and charged exciton emission is modified by the magnetic field, reflecting the creation of field-induced valley polarization. At high do** levels, the Zeeman shift of the charged exciton increases to $\mp$ 0.18 meV/T. This enhancement is attributed to many-body effects on the binding energy of the charged excitons.
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Submitted 30 September, 2014;
originally announced September 2014.
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Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi$_{2}$Te$_{2}$Se
Authors:
Sung Hwan Kim,
Kyung-Hwan **,
Joonbum Park,
Jun Sung Kim,
Seung-Hoon Jhi,
Tae-Hwan Kim,
Han Woong Yeom
Abstract:
The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes wit…
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The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi$_{2}$Te$_{2}$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi$_{2}$Te$_{2}$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].
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Submitted 9 April, 2014; v1 submitted 8 April, 2014;
originally announced April 2014.
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Effect of hydrogen on the atomic structure of Pd(001)
Authors:
S. H. Kim,
J. Barthel,
H. L. Meyerheim,
J. Kirschner,
Jikeun Seo,
J. -S. Kim
Abstract:
The atomic structures of clean and hydrogen-adsorbed Pd(001) are investigated by low energy electron diffraction (LEED) I/V analysis. Clean Pd(001) shows little surface relaxation in sharp contrast to previous reports.
Adsorbing 1 monolayer of hydrogen on Pd(001), we observe sizable expansion of the interlayer spacing of the first two surface layers, $d_{12}$ by 4.7% of the corresponding one o…
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The atomic structures of clean and hydrogen-adsorbed Pd(001) are investigated by low energy electron diffraction (LEED) I/V analysis. Clean Pd(001) shows little surface relaxation in sharp contrast to previous reports.
Adsorbing 1 monolayer of hydrogen on Pd(001), we observe sizable expansion of the interlayer spacing of the first two surface layers, $d_{12}$ by 4.7% of the corresponding one of bulk Pd. Both experimental observations are in excellent agreement with the predictions of recent {\it ab initio} calculations. A series of experiments with varying coverages of hydrogen adsorbed on Pd(001), reveals that $d_{12}$ monotonically increases with the increasing coverage. Such an observation strongly supports the contention that the previous observation of expanded $d_{12}$ in clean Pd(001) results from contamination of the surface by residual hydrogen.
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Submitted 27 November, 2004;
originally announced November 2004.
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Microstructure of the highly dense MgB2 Superconductor by transmission electron microscope
Authors:
Gun Yong Sung,
Sang Hyeob Kim,
JunHo Kim,
Dong Chul Yoo,
Ju Wook Lee,
Jeong Yong Lee,
C. U. Jung,
Min-Seok Park,
W. N. Kang,
Du Zhonglian,
Sung-Ik Lee
Abstract:
The microstructure of the MgB2 superconductor sintered at high temperature under a high pressure of about 3 GPa was investigated by using a high-resolution transmission electron microscope (HRTEM). The TEM images did not show any pores in the specimen. All grains were compactly connected, and no discernable empty spaces or impurities at the boundaries existed over the regions investigated. The H…
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The microstructure of the MgB2 superconductor sintered at high temperature under a high pressure of about 3 GPa was investigated by using a high-resolution transmission electron microscope (HRTEM). The TEM images did not show any pores in the specimen. All grains were compactly connected, and no discernable empty spaces or impurities at the boundaries existed over the regions investigated. The HRTEM image showed clearly each constituent atom that formed the basal hexagonal plane, without any defect in a single grain. The a-axis lattice parameter, 0.307 nm, from this direct measurement was shorter than the value, 0.314 nm obtained from samples prepared using diffusion techniques. A minor impurity phase, which was most probably MgB4 and did not form interfacial layers was also observed, but was well isolated from the main MgB2 phase. Our results verify that the MgB2 powder was sintered under high temperature and high pressure into its theoretical density without any porosity or grain growth.
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Submitted 3 March, 2001; v1 submitted 27 February, 2001;
originally announced February 2001.
